JP4339288B2 - Gas introduction apparatus, vapor phase growth apparatus including the same, and vapor phase growth method using the vapor phase growth apparatus - Google Patents

Description

  The present invention relates to a gas introduction device and a vapor phase growth apparatus including the same.

  A compound semiconductor in which two or more elements, for example, a group III element and a group V element in the periodic table of elements are combined, has a wider forbidden band and a higher temperature than silicon (Si), for example, which exhibits semiconductor characteristics alone. Although there are advantages such as being capable of operation and high electron mobility, it has difficulty in fabrication such as low mechanical strength and requiring strict composition control.

As a method of forming a compound semiconductor having such manufacturing difficulties, an organometallic compound is introduced into a furnace together with a carrier gas on a substrate to be heated, and thermally decomposed and chemically reacted on the substrate surface. Metalorganic vapor phase epitaxy (Metal)
Organic Chemical Vapor Deposition (MOCVD method) is used.

  A horizontal CVD furnace is generally used for the MOCVD method for forming a compound semiconductor thin film on a substrate. A horizontal CVD furnace used for forming a compound semiconductor is required to be a furnace capable of forming a thin film having a uniform composition and a uniform thickness over the entire surface of a substrate.

  FIG. 18 is a top view showing a simplified configuration of the vapor phase growth apparatus 1 which is a conventional horizontal CVD furnace, and FIG. 19 is a view taken along the section line AA of FIG. In FIG. 18, the top plate is omitted for easy understanding of the configuration of the vapor phase growth apparatus 1. In the conventional vapor phase growth apparatus 1, a partition plate 4 parallel to the substrate surface is disposed in the reaction tube 3 upstream of the substrate 2 on which a thin film is formed, and the thickness of the tip end portion 4 a of the partition plate 4 is large. It is proposed to form the thin film continuously (see Patent Document 1).

In the vapor phase growth apparatus 1 of Patent Document 1 shown in FIGS. 18 and 19, two layers of flow paths 5 and 6 (for the sake of convenience) are arranged upstream of the substrate 2 of the reaction tube 3 in the raw material gas flow direction. The upper layer shown in FIG. 19 is partitioned into a first flow path 5 and the lower layer is referred to as a second flow path 6). The same or different two source gases are respectively introduced from the first and second gas inlets 7 and 8 formed at the upstream end of the source gas flow direction. For example, when gallium arsenide (GaAs) is formed as a compound semiconductor, hydrogen gas (H ₂ ) is used as a carrier gas, hydrogen gas + trimethylgallium [Ga (CH ₃ ) ₃ ], and hydrogen gas + arsine (AsH ₃ ). Are used as source gases.

  In the vapor phase growth apparatus 1, when the raw material gas introduced from the first and second gas introduction ports 7 and 8 is caused to flow through each flow path and passes through the front end 4 a of the raw material gas flow direction of the partition plate 4. The source gases that have passed through the first and second flow paths 5 and 6 join together. The combined source gas is supplied to the surface of the substrate 2 heated by the action of an alternating magnetic field generated by the high-frequency coil 9 to which a high-frequency current is applied, and thermally decomposes and chemically reacts to form a compound semiconductor thin film. To do. The gas after being used as a raw material for forming the thin film further flows and is discharged from the gas discharge port 10.

  Usually, when a partition plate that divides the flow path of the reaction tube into a plurality is provided, a gas flow velocity difference occurs between the upstream side and the downstream side of the gas flow direction front end portion of the partition plate, so that the gas flow is disturbed, Due to this disturbance, there is a problem that defects due to particles are generated in the thin film, and the uniformity of the composition and thickness of the thin film is lowered.

  The vapor phase growth apparatus 1 proposed in Patent Document 1 solves such a problem, and is formed such that the thickness of the front end portion 4a of the partition plate 4 in the gas flow direction is continuously reduced. Thus, the generation of the vortex 11 of the gas flow on the downstream side of the front end 4a of the partition plate is suppressed, and the high growth rate of the thin film and the reduction of particles are achieved.

  However, the technique of Patent Document 1 has the following problems. If the wall thickness of the front end 4a of the partition plate is continuously reduced, the gas flow rate threshold value at which the vortex 11 is generated and the generation level at the same gas flow rate can be reduced as compared with the case where the partition plate tip portion 4a is not reduced at all. As the flow rate condition is increased, the angle of the partition plate tip 4a must be made smaller. Therefore, the rigidity limit, the processing limit, and the cost increase of the tip portion 4a thinned over a large area of the partition plate 4 are increased. Such issues arise.

  Further, it has been proposed to have a configuration similar to that of the vapor phase growth apparatus 1 shown in FIGS. 18 and 19, and to further provide notches at both ends in the width direction at the front end of the partition plate (see Patent Document 2). . However, the technique of Patent Document 2 also has the same problem as Patent Document 1 because it includes a configuration in which the tip of the partition plate is continuously thinned.

  Further, in the horizontal MOCVD furnace, a gas throttle part for mixing the raw material gas and controlling the flow of the mixed gas is provided on the upstream side of the substrate, and the introduction path of the mixed gas is provided so as to be substantially parallel to the substrate surface. Proposed (see Patent Document 3). According to the apparatus of Patent Document 3, the mixed gas in which the first source gas and the second source gas are mixed is supplied in parallel and smoothly to the surface of the substrate up to the vicinity of the surface. Assume that a high-quality semiconductor can be formed on a substrate.

  However, in the horizontal MOCVD furnace shown in Patent Document 3, the leading end portion in the gas flow direction of the partition plate that partitions the introduction path through which the mixed gas flows and the introduction path through which the subflow (carrier) gas flows, that is, the mixed gas Since the tip of the partition plate at the junction of the subflow (carrier) gas and the other portion of the partition plate is formed with the same thickness, the difference in gas flow velocity between the upstream side and the downstream side of the junction occurs. There is a problem that the vortex of the gas flow is generated on the side and the uniformity of the composition and thickness of the thin film is lowered.

JP-A-10-223543 JP 2000-277442 A JP 2004-63555 A

  In a horizontal MOCVD furnace, the degree of vortex generation on the downstream side of the front end of the partition plate where a plurality of gases merge is determined by the taper angle of the front end of the partition plate (i.e., the flow path Since the gas flow velocity is highly dependent on both the gas flow velocity and the gas flow velocity, the gas cannot sufficiently circulate in the vicinity of the downstream side of the front end of the partition plate. It is considered that the main cause of the vortex generation is that the side becomes lower pressure or negative pressure than the upstream side of the front end of the partition plate.

  The present inventors have prevented the generation of gas flow vortices by preventing the occurrence of a region having a lower pressure or a negative pressure than the upstream side of the joining portion on the downstream side of the joining portion where a plurality of source gases are joined. The present invention has been achieved based on the knowledge that the amount of the above can be reduced.

  An object of the present invention is to supply a plurality of source gases to the surface of a substrate without causing gas flow disturbance, that is, a gas introducing device capable of forming a high-quality compound semiconductor thin film on the substrate and the same It is to provide a vapor phase growth apparatus.

The present invention is a gas introducing device for introducing a raw material gas so as to supply a raw material gas for forming a thin film on the surface of a substrate to be processed,
A gas introduction pipe formed with at least two wall members provided so as to be opposed to each other, and forming a flow path for allowing a plurality of different or similar raw material gases to flow in a predetermined direction;
A plurality of source gases extending in the direction of the source gas flow inside the gas introduction pipe and provided in parallel to the two wall members, and extending through the internal space of the gas introduction pipe to the middle of the length in the direction of the source gas flow Each including a partition plate that partitions into a plurality of flow paths that flow through,
The height that is the distance in the direction in which the two wall members of the single confluence channel formed by joining the plural raw material gas passes through the front end of the raw material gas flow direction of the partition plate,
The gas introducing device is characterized by being equal to a sum obtained by adding a height which is a distance in a direction in which the two wall members of each flow path through which a plurality of source gases flow is opposed.

The present invention is also a gas introduction device for introducing a raw material gas so as to supply a raw material gas for forming a thin film on the surface of a substrate to be processed,
A gas introduction pipe formed with at least two wall members provided so as to be opposed to each other, and forming a flow path for allowing a plurality of different or similar raw material gases to flow in a predetermined direction;
A plurality of source gases extending in the direction of the source gas flow inside the gas introduction pipe and provided in parallel to the two wall members, and extending through the internal space of the gas introduction pipe to the middle of the length in the direction of the source gas flow Each including a partition plate that partitions into a plurality of flow paths that flow through,
The height that is the distance in the direction in which the two wall members of the single confluence channel formed by joining the plural raw material gas passes through the front end of the raw material gas flow direction of the partition plate,
The sum of the heights, which are the distances in the direction in which the two wall members of each flow path through which each of the plurality of source gases flow, is opposite,
The thickness of the partition plate is a gas introducing device characterized in that the partition plate is formed so as to continuously decrease as the raw material gas flows from the upstream side to the downstream side.

The present invention is also a gas introduction device for introducing a raw material gas so as to supply a raw material gas for forming a thin film on the surface of a substrate to be processed,
A gas introduction pipe formed with at least two wall members provided so as to be opposed to each other, and forming a flow path for allowing a plurality of different or similar raw material gases to flow in a predetermined direction;
A plurality of source gases extending in the direction of the source gas flow inside the gas introduction pipe and provided in parallel to the two wall members, and extending through the internal space of the gas introduction pipe to the middle of the length in the direction of the source gas flow Each including a partition plate that partitions into a plurality of flow paths that flow through,
The height that is the distance in the direction in which the two wall members of the single confluence channel formed by joining the plural raw material gas passes through the front end of the raw material gas flow direction of the partition plate,
The sum of the heights, which are the distances in the direction in which the two wall members of each flow path through which each of the plurality of source gases flow, is opposite,
The thickness of the partition plate is a gas introduction device that is formed so as to decrease stepwise as the raw material gas flows from the upstream side to the downstream side.

The present invention is also a gas introduction device for introducing a raw material gas so as to supply a raw material gas for forming a thin film on the surface of a substrate to be processed,
A gas introduction pipe formed with at least two wall members provided so as to be opposed to each other, and forming a flow path for allowing a plurality of different or similar raw material gases to flow in a predetermined direction;
A plurality of source gases extending in the direction of the source gas flow inside the gas introduction pipe and provided in parallel to the two wall members, and extending through the internal space of the gas introduction pipe to the middle of the length in the direction of the source gas flow Each including a partition plate that partitions into a plurality of flow paths that flow through,
The height that is the distance in the direction in which the two wall members of the single confluence channel formed by joining the plural raw material gas passes through the front end of the raw material gas flow direction of the partition plate,
The sum of the heights, which are the distances in the direction in which the two wall members of each flow path through which each of the plurality of source gases flow, is opposite,
Three flow paths are formed including two partition plates,
The two dividers are
The gas introducing device is characterized in that surfaces facing each other are formed so as to be flat up to a tip portion in a raw material gas flow direction.

The present invention is also a gas introduction device for introducing a raw material gas so as to supply a raw material gas for forming a thin film on the surface of a substrate to be processed,
A gas introduction pipe formed with at least two wall members provided so as to be opposed to each other, and forming a flow path for allowing a plurality of different or similar raw material gases to flow in a predetermined direction;
A plurality of source gases extending in the direction of the source gas flow inside the gas introduction pipe and provided in parallel to the two wall members, and extending through the internal space of the gas introduction pipe to the middle of the length in the direction of the source gas flow Each including a partition plate that partitions into a plurality of flow paths that flow through,
The height that is the distance in the direction in which the two wall members of the single confluence channel formed by joining the plural raw material gas passes through the front end of the raw material gas flow direction of the partition plate,
The sum of the heights, which are the distances in the direction in which the two wall members of each flow path through which each of the plurality of source gases flow, is opposite,
The partition plate is a gas introduction device characterized in that at least the vicinity of the end portion on the downstream side in the direction in which the raw material gas flows is made of metal .

The present invention, the metal is, you being a stainless steel.
The present invention is also a gas introduction device for introducing a raw material gas so as to supply a raw material gas for forming a thin film on the surface of a substrate to be processed,
A gas introduction pipe formed with at least two wall members provided so as to be opposed to each other, and forming a flow path for allowing a plurality of different or similar raw material gases to flow in a predetermined direction;
A plurality of source gases extending in the direction of the source gas flow inside the gas introduction pipe and provided in parallel to the two wall members, and extending through the internal space of the gas introduction pipe to the middle of the length in the direction of the source gas flow Each including a partition plate that partitions into a plurality of flow paths that flow through,
The height that is the distance in the direction in which the two wall members of the single confluence channel formed by joining the plural raw material gas passes through the front end of the raw material gas flow direction of the partition plate,
The sum of the heights, which are the distances in the direction in which the two wall members of each flow path through which each of the plurality of source gases flow, is opposite,
A gas introduction apparatus including a cooling unit that is provided outside the gas introduction pipe and cools the gas introduction pipe.

In addition, the present invention is formed by joining a plurality of source gases that pass through each flow path through which a plurality of source gases formed by the partition plate flow, and a front end portion of the partition plate in the source gas flow direction. One confluence channel is
Ri rectangular der shape in cross section perpendicular to the flow-direction of the material gas,
The sum of the cross-sectional areas perpendicular to the source gas flow direction of each flow path through which each of the plurality of source gases flows, and the plurality of source gases merge past the tip of the partition plate in the source gas flow direction. The gas introduction device is characterized in that the cross-sectional area perpendicular to the raw material gas flow direction of one merging channel formed in this manner is equal .

The present invention is also a gas introduction device for introducing a raw material gas so as to supply a raw material gas for forming a thin film on the surface of a substrate to be processed,
A gas introduction pipe formed with at least two wall members provided so as to be opposed to each other, and forming a flow path for allowing a plurality of different or similar raw material gases to flow in a predetermined direction;
A plurality of source gases extending in the direction of the source gas flow inside the gas introduction pipe and provided in parallel to the two wall members, and extending through the internal space of the gas introduction pipe to the middle of the length in the direction of the source gas flow Each including a partition plate that partitions into a plurality of flow paths that flow through,
The height that is the distance in the direction in which the two wall members of the single confluence channel formed by joining the plural raw material gas passes through the front end of the raw material gas flow direction of the partition plate,
The sum of the heights, which are the distances in the direction in which the two wall members of each flow path through which each of the plurality of source gases flow, is opposite,
Each flow path through which a plurality of source gases flow, and one merged path formed by joining a plurality of source gases past the front end of the partition plate in the source gas flow direction,
The gas introduction device is characterized by being formed in a radial shape.

The present invention is a gas introducing device for introducing a raw material gas so as to supply a raw material gas for forming a thin film on the surface of a substrate to be processed,
Two wall members provided so as to be opposed to each other and two side wall members provided so as to be substantially perpendicular to and opposed to the two wall members are formed. A gas introduction pipe that forms a flow path for flowing in a predetermined direction;
A plurality of source gases extending in the direction of the source gas flow inside the gas introduction pipe and provided in parallel to the two wall members, and extending through the internal space of the gas introduction pipe to the middle of the length in the direction of the source gas flow Each including a partition plate that partitions into a plurality of flow paths that flow through,
The thickness of the partition plate is formed so as to decrease continuously or stepwise as the raw material gas flows from the upstream side to the downstream side,
A cross-sectional area perpendicular to the raw material gas flow direction of one confluence channel formed by joining a plurality of raw material gases past the leading end portion of the raw material gas flow direction of the partition plate,
The sum of the cross-sectional areas perpendicular to the source gas flow direction of each flow path through which each of the plurality of source gases flows is equal to or less than the sum.
Corresponding to the thickness of the partition plate decreasing continuously or stepwise, the separation distance between the two side wall members of each flow path through which a plurality of source gases flow is reduced. This is a gas introduction device.

  Further, the present invention provides a sum obtained by adding a cross-sectional area perpendicular to the flow direction of the raw material gas in each flow path through which a plurality of raw material gases flow, and a plurality of portions past the front end of the flow direction of the raw material gas of the partition plate The cross-sectional area perpendicular | vertical with respect to the raw material gas flow direction of the one confluence | merging flow path formed by combining these raw material gases is equal, It is characterized by the above-mentioned.

  The present invention is a vapor phase growth apparatus including any one of the gas introduction devices.

  The present invention is characterized in that the vapor phase growth apparatus is prepared, and a gas introduction apparatus provided in the vapor phase growth apparatus guides and supplies a source gas to a substrate to be processed to form a thin film on the surface of the substrate. Is a vapor phase growth method.

  According to the present invention, a gas introduction device for introducing a raw material gas for forming a thin film on a surface of a substrate to be processed has a gas introduction pipe that forms a flow path for allowing a plurality of different or similar raw material gases to flow in a predetermined direction. And a partition plate that partitions the internal space of the gas introduction pipe into a plurality of flow paths through which a plurality of source gases flow to the middle of the length of the source gas flow direction. A configuration in which the height of one confluence channel formed by joining a plurality of source gases past the tip is less than or equal to the sum of the heights of the respective channels through which the plurality of source gases flow. Since it has, it can suppress generation | occurrence | production of the vortex in the gas flow direction downstream rather than the said front-end | tip part of a partition plate.

Also, the gas introduction device, a sum obtained by adding the height of each flow path in which a plurality of raw material gas is excessive, respectively stream, a plurality of raw material gas past the feed gas stream over the direction of the distal end portion of the partition plate merges Since the height of one formed confluence channel is equal, the generation of vortices on the downstream side of the front end of the partition plate can be suppressed, and the gas flow rate can be kept constant without acceleration / deceleration. it can.

  Further, according to the present invention, the thickness of the partition plate is formed so as to decrease continuously as it moves from the upstream side where the raw material gas flows through to the downstream side, so Thus, the gas between the layers forming the flow-through layer can be smoothly joined together.

  Further, according to the present invention, the thickness of the partition plate is formed so as to decrease step by step as the raw material gas flows from the upstream side to the downstream side, so that the thickness gradually decreases. Thus, it is possible to easily produce a partition plate having a configuration to achieve low cost.

  Further, according to the present invention, the gas introduction device includes two partition plates to form three flow paths, and the two partition plates face each other up to the front end portion in the raw material gas flow direction. Since it is formed to be flat, it has a simple structure and can be easily manufactured at low cost.

  According to the present invention, at least the vicinity of the end of the partition plate on the downstream side in the raw material gas flow direction is made of metal, and the metal is preferably stainless steel. Accordingly, sufficient rigidity and high processing accuracy can be obtained for the partition plate, and a partition plate having excellent durability can be easily manufactured at low cost.

  Further, according to the present invention, since the gas introduction device includes a cooling means provided outside the gas introduction tube to cool the gas introduction tube, the apparatus is heated and heated to promote thin film formation. Even so, the gas introduction pipe and the partition plate can be cooled, and the thermal expansion deformation and the like thereof can be suppressed.

  Further, according to the present invention, each flow path through which a plurality of source gases formed by the partition plate flows and a plurality of source gases merge past the front end portion of the partition plate in the source gas flow direction. The one merged flow path is configured so that the shape in a cross section perpendicular to the flow direction of the raw material gas is rectangular, so in a so-called lateral flow type device, vortex generation at the gas merged portion is generated. A gas introducing device capable of suppressing the above is realized.

Also, the sum obtained by adding the cross-sectional area perpendicular to the feed gas stream over the direction of each flow channel in which a plurality of raw material gas is excessive respective flow, multiple past the tip of the feed gas stream over the direction of the partition plate material Since the cross-sectional area perpendicular to the raw material gas flow direction of one merging flow path formed by gas merging is equal, in a so-called lateral flow type apparatus, the vortex at the gas merging portion A gas introduction device that can suppress the generation and can keep the gas flow rate constant without acceleration / deceleration is realized.

  Further, according to the present invention, each flow path through which a plurality of source gases flow, and one merged path formed by joining a plurality of source gases past the front end portion of the partition plate in the source gas flow direction. Is formed radially, for example, a gas introducing device is realized that can simultaneously flow gas radially to a plurality of substrates to be processed and can suppress the generation of vortices in the gas junction.

  According to the present invention, a gas introducing device for introducing a raw material gas for forming a thin film on the surface of a substrate to be processed has two wall members provided so as to face each other, and substantially perpendicular to and opposed to the two wall members. A gas introduction pipe that is formed to have a flow path through which a plurality of different or similar raw material gases flow in a predetermined direction, and an internal space of the gas introduction pipe. And a partition plate that partitions the plurality of flow paths through which the plurality of source gases flow to the middle of the length of the source gas flow direction, and the thickness of the partition plate is from the upstream side to the downstream side where the source gas flows The raw material of one merging channel formed so as to decrease continuously or stepwise as it goes to, and is formed by merging a plurality of source gases past the leading end of the source gas flow direction of the partition plate The cross-sectional area perpendicular to the gas flow direction is Corresponding to the thickness of the partition plate decreasing continuously or step by step so that the cross-sectional area perpendicular to the flow direction of the raw material gas in each flow path is less than the sum. Since the two side wall members of each flow path through which each of the plurality of source gases flow is configured to be spaced apart from each other, the vortex is generated on the downstream side in the gas flow direction from the front end of the partition plate. Can be suppressed.

  Further, according to the present invention, the gas introduction device includes the sum of the cross-sectional areas perpendicular to the source gas flow direction of each flow path through which each of the plurality of source gases flows, and the source gas flow rate of the partition plate. Since the cross-sectional area perpendicular to the raw material gas flow direction of a single confluence flow path formed by merging a plurality of raw material gases past the leading end portion in the direction has the same configuration, the leading end portion of the partition plate In addition, the generation of vortices on the downstream side can be suppressed, and the gas flow rate can be kept constant without acceleration / deceleration.

  According to the present invention, since the vapor phase growth apparatus includes any of the gas introduction devices described above, the vortex is generated in a wide setting range with respect to the flow velocity of the gas flow overlayer flowing through each flow path partitioned by the partition plate. A source gas that has been suppressed and merged is supplied to the substrate, and a thin film of a compound semiconductor having a uniform film thickness and composition can be vapor-phase grown.

  According to the present invention, the above-mentioned vapor phase growth apparatus is prepared, and the raw material gas is guided and supplied to the substrate to be processed by the gas introduction apparatus provided in the vapor phase growth apparatus, and a thin film is formed on the surface of the substrate. This suppresses the generation of vortices in the vicinity of the merging portion of the source gas, thereby suppressing the synthesis of inhomogeneous reaction products due to the gas phase reaction in the vicinity of the vortex and suppressing the decrease in the utilization efficiency of the source gas. Further, it is possible to obtain a good quality compound semiconductor thin film by suppressing deterioration and non-uniformity of the film quality.

  FIG. 1 is a top view showing a simplified configuration of a vapor phase growth apparatus 20 including a gas introduction apparatus 21 according to a first embodiment of the present invention, and FIG. 2 is viewed from a section line II-II in FIG. It is a figure. In FIG. 1, the first wall member (top plate) 23, which is one of the two wall members provided in the gas introduction device 21, is omitted for easy understanding of the device configuration. The gas introduction apparatus 21 is provided in the vapor phase growth apparatus 20 and supplies a source gas for forming a thin film on the surface of the substrate 22 to be processed.

  The gas introducing device 21 is connected to the first and second wall members 23 and 24, which are two wall members provided so as to face each other, and the first and second wall members 23 and 24, and is substantially perpendicular and opposed to each other. The first and second side wall members 25 and 26, which are two side wall members provided as described above, are formed, and the gas introduction forms a flow path through which a plurality of different or the same kind of source gases flow in a predetermined direction. The pipe 27 and the gas introduction pipe 27 are provided in parallel to the first and second wall members 23 and 24 and extend in the direction of the raw material gas flow. And a partition plate 28 that partitions into a plurality of flow paths (two in the present embodiment) through which a plurality of source gases flow to the middle of the length in the direction.

  The first and second wall members 23 and 24 and the first and second side wall members 25 and 26 constituting the gas introduction pipe 27 are made of, for example, quartz. The vapor phase growth apparatus 20 provided with the gas introduction pipe 27 is a horizontal flow type furnace, and the first and second wall members 23 and 24 are arranged in a substantially horizontal direction. The side wall members 25, 26 are arranged so as to be connected to the first and second wall members 23, 24 so as to be substantially vertical and opposed to each other. Therefore, the gas which is a flow path which is separated from the outer space by the first and second wall members 23 and 24 and the first and second side wall members 25 and 26 and allows the source gas to flow in a predetermined direction. An introduction pipe 27 is configured. Since the first wall member 23 is disposed above the second wall member 24, the first wall member 23 is hereinafter referred to as a top plate 23, and the second wall member 24 is hereinafter referred to as a bottom plate 24.

  The top plate 23 and the bottom plate 24 constituting the gas introduction pipe 27 are formed in a tapered shape in the vicinity of the end portion on the gas introduction side, and are connected to the top plate 23 and the bottom plate 24, respectively. 25 and 26 are also provided in the vicinity of the end portion on the gas introduction side so that the opposing separation distance becomes shorter as the end portion on the gas introduction side approaches. Therefore, in the gas introduction pipe 27, the gas flow path expands in the horizontal direction as it proceeds downstream in the gas flow excess direction, and then the flow determined as the separation distance between the first and second side wall members 25, 26 facing each other. It is configured so that the road width is constant. A portion where the flow path width of the gas introduction pipe 27 is constant extends further to the downstream side in the gas flow direction to constitute the reaction pipe 41 of the vapor phase growth apparatus 20. The configuration of the reaction tube 41 portion of the vapor phase growth apparatus 20 will be described later.

  Gas introduction ports 29 and 30 for introducing the raw material gas into the gas introduction pipe 27 are formed at the end portion 27a on the gas introduction pipe 27 where the gas is introduced. As described above, in the present embodiment, the gas introduction pipe 27 is divided into two flow paths up and down by one partition plate 28 that extends in the horizontal direction. The channel 31 is called the lower channel and the second channel 32 is called. Therefore, the gas inlet 29 formed in the first flow path 31 is referred to as a first gas inlet 29, and the gas inlet 30 formed in the second flow path 32 is referred to as a second gas inlet 30.

  A short tubular introduction connecting member 33 is connected to each of the first and second gas introduction ports 29 and 30, and the same kind is supplied from a gas supply device (not shown) included in the vapor phase growth apparatus 20 via the introduction connecting member 33. Alternatively, different source gases are introduced into the first and second flow paths 31 and 32, respectively.

  As source gases introduced into the first and second flow paths 31 and 32, respectively, when the thin film formed on the substrate 22 is gallium arsenide, for example, [a mixed gas of trimethylgallium and hydrogen gas], and [ Mixed gas of arsine and hydrogen gas]. From the high-pressure gas cylinders filled with these mixed gases, the mixed gases whose pressure and flow rate are adjusted are introduced into the first and second flow paths 31 and 32 through the pressure / flow rate adjusting valve, respectively.

  The partition plate 28 that partitions the inside of the gas introduction pipe 27 into upper and lower first and second flow paths 31 and 32 is a flat plate member made of a metal such as stainless steel. The partition plate 28 is characterized in that the portion from the vicinity of the portion where the flow path width of the gas introduction pipe 27 is constant to the distal end portion 28a downstream in the gas flow direction (this portion is referred to as the vicinity of the distal end portion here). The thickness is formed so as to decrease continuously as the raw material gas flows from the upstream side to the downstream side. In the present embodiment, the partition plate 28 is formed so that only the surface facing the first flow path 31 becomes an inclined surface in the vicinity of the front end portion, and the thickness continuously decreases. .

  In this way, the thickness near the front end of the partition plate 28 is formed so as to continuously decrease, so that the first and second flow paths 31 and 32 flow through the front end 28a of the partition plate 28, respectively. The raw material gases that have passed through can smoothly merge.

  Further, the gas introduction device 21 is formed by joining the first flow path 31 and the second flow path 32 that pass through the front end portion 28a of the partition plate 28 in the flow direction of the raw material gas and respectively flow a plurality of raw material gases. The height h, which is the distance in the direction in which the top plate 23 and the bottom plate 24 of one merging flow path 34 face each other, is opposed to the top plate 23 and the bottom plate 24 of the first flow path 31 through which the raw material gas flows. The sum (h1 + h2) or the sum of the height (h1 or h3) that is the distance in the direction and the height (h2 or h4) that is the distance in the direction in which the top plate 23 and the bottom plate 24 of the second flow path 32 face each other. h3 + h4) or less (h ≦ h3 + h4 ≦ h1 + h2).

  In the gas introducing device 21 of the present embodiment, as the thickness of the vicinity of the front end portion of the partition plate 28 continuously decreases, the partition plate can be satisfied so that the above-described flow path height relationship can be satisfied. The inner surface facing the first flow path 31 of the top plate 23 arranged to face the inclined surface 28 is directed toward the downstream side in the gas flow direction so as to correspond to the thickness reduction of the partition plate 28. Along with this, the first flow path 31 is formed so as to gradually and continuously increase its protruding amount. The continuous increase in the amount of protrusion of the top plate 23 inward of the first flow path 31 may be configured to gradually increase the thickness of the top plate 23 as in the present embodiment. Without being limited thereto, the top plate 23 may be formed to have an inclined surface by bending.

  Note that one flow path height h1 of the first flow path 31 is a flow path height in a flat portion where an inclined surface for reducing the thickness of the partition plate 28 is not formed. One flow path height h3 is a flow path height in a portion where an inclined surface for reducing the wall thickness is formed on the partition plate 28. One flow path height h1 of the first flow path 31 and the other flow path height h3 are the same by adjusting the protruding shape of the top plate 23 into the first flow path 31 (h1 = h3) is preferably formed, and even when the heights are different, another channel height h3 is formed to be smaller than one channel height h1 (h3 <h1). .

  In addition, one flow path height h2 of the second flow path 32 is a flow path height in a flat portion where an inclined surface for reducing the thickness of the partition plate 28 is not formed. One flow path height h4 is a flow path height in a portion where an inclined surface for reducing the wall thickness is formed on the partition plate 28. However, in this embodiment, since the inclined plate is not formed on the surface facing the second flow path 32 of the partition plate 28 and is flat, one flow path height h2 and another flow path height. h4 is the same (h2 = h4). However, when one channel height h2 of the second channel 32 and the other channel height h4 are formed at different heights, another one is formed in the same manner as the first channel 31 described above. The channel height h4 is preferably formed to be smaller than one channel height h2 (h4 <h2).

  In the gas introduction device 21, the raw material gas that has flowed through the first flow path 31 and the raw material gas that has flowed through the second flow path 32 at the leading end portion 28 a of the partition plate 28 pass through the gas flow in the merging flow path 34. When merging at the start end of the direction (since a plurality of source gases merge at the nearest portion past the front end portion 28a of the partition plate 28, this portion may hereinafter be referred to as a merging portion). The sum of the channel heights is equal to or less than the merged channel height on the downstream side of the junction, in other words, the junction channel height h on the downstream side of the junction is equal to the channel height on the upstream side of the junction. It is configured not to increase more than the sum (h1 + h2 or h3 + h4).

  In the gas introduction device 21 of the present embodiment, the flow path width formed by the first side wall member 25 and the second side wall member 26 is formed so as to be constant between the upstream side and the downstream side of the joining portion. Since the path height is formed so that at least the downstream side of the merging portion does not increase more than the sum of the upstream channel heights, as a result, the merging channel 34 in a cross section perpendicular to the gas flow direction is obtained. The cross-sectional area is formed so as not to increase more than the sum of the cross-sectional areas perpendicular to the gas flow direction of the first and second flow paths 31 and 32 on the upstream side of the junction. In addition, the shape of the cross section perpendicular | vertical with respect to the gas flow direction of each flow path at this time exhibits a rectangle, respectively.

  This prevents the generation of a low-pressure or negative-pressure region due to the expansion of the flow path on the downstream side of the front end portion 28a of the partition plate 28, that is, the downstream side of the merging portion. Disturbance, that is, generation of vortices is suppressed, and the source gas mixed / mixed in a uniform state can be supplied to the substrate 22.

  The gas introduction pipe 27 extends further to the downstream side in the gas flow direction than the junction, and constitutes the reaction pipe 41 of the vapor phase growth apparatus 20. An opening 42 is formed in the bottom plate 24 in the reaction tube 41 portion so as to face the merging flow path 34, and a tray 43 for accommodating the substrate 22 is provided so as to seal the opening 42. The tray 43 may be configured to be driven by a driving unit in a state where the substrate 22 is placed.

  A heating means 44 is provided outside the reaction tube 41 and below the tray 43. As the heating means 44, a high-frequency heating device, an infrared heating device, or the like can be used. The substrate 22 is heated and heated via the tray 43 by the heating means 44, and the thermal decomposition and chemical reaction of the raw material gas that touches the heated substrate 22 are promoted.

  In the vapor phase growth apparatus 20, the raw material gas that is joined / mixed in a uniform state without turbulence, that is, vortex is not generated by the gas introduction device 21, has its surface exposed in the joining flow path 34, and the tray 43. Since it is supplied to the substrate 22 placed thereon, synthesis of non-uniform reaction products can be suppressed, and a high-quality compound semiconductor thin film having a uniform film thickness and composition can be vapor-phase grown.

  The source gas used to form the compound semiconductor thin film on the surface of the substrate 22 flows further downstream in the gas flow direction, and is opposite to the gas introduction side of the reaction tube 41 (gas introduction tube 27). The gas is exhausted from a gas exhaust port 45 formed at the end, subjected to a predetermined process by a gas recovery device (not shown) connected to the gas exhaust port 45, and then exhausted.

  The sum (h1 + h2 or h3 + h4) obtained by adding the heights of the first and second flow paths 31 and 32 and the height h of the merge flow path 34 are more preferably equal (h = h3 + h4 = h1 + h2). With such a configuration, the generation of vortices on the downstream side of the front end of the partition plate can be suppressed, and the gas flow rate can be kept constant without acceleration / deceleration.

  FIG. 3 is a top view showing a simplified configuration of a vapor phase growth apparatus 50 including a gas introduction apparatus 51 according to the second embodiment of the present invention, and FIG. 4 is viewed from a section line IV-IV in FIG. It is a figure. The vapor phase growth apparatus 50 including the gas introduction apparatus 51 of the present embodiment is similar to the vapor phase growth apparatus 20 including the gas introduction apparatus 21 according to the first embodiment, and corresponding portions are denoted by the same reference numerals. Therefore, the description is omitted.

  It should be noted in the vapor phase growth apparatus 50 provided with the gas introduction device 51 that the partition plate 55 that partitions the internal space of the gas introduction pipe 52 into the first and second flow paths 31 and 32 is the first in the vicinity of the tip portion. In other words, both the surface facing the flow channel 31 and the surface facing the second flow channel 32 have inclined portions for reducing the thickness.

  Since the partition plate 55 is formed with inclined portions on the sides facing the first and second flow paths 31 and 32, the height h of the merge flow path 34 is the first and second flow paths 31 and 3 before the merge. In the gas introduction device 51, both the top plate 53 and the bottom plate 54 are connected to the first flow channel 31 and the second flow channel 32 so that the flow rate height is equal to or less than the sum (h1 + h2 or h3 + h4). Are formed so as to protrude inwardly.

  Even in the case where the inclined portions are formed on both surfaces of the partition plate 55, the flow path height is formed such that at least the downstream side of the merge part does not increase more than the sum of the upstream flow path heights, and the first side wall member 25 and the second side wall member 26 are formed so that the flow path width is constant between the upstream side and the downstream side of the merging portion, so that the merging flow in a cross section perpendicular to the gas flow direction. The cross-sectional area of the passage 34 is formed so as not to increase more than the sum of the cross-sectional areas perpendicular to the gas flow direction of the first and second flow paths 31 and 32 on the upstream side of the junction. As a result, the vapor phase growth apparatus 50 including the gas introduction apparatus 51 of the present embodiment can achieve the same effects as the vapor phase growth apparatus 20 including the gas introduction apparatus 21 of the first embodiment.

  5 and 6 are cross-sectional views showing a simplified configuration of a vapor phase growth apparatus including a gas introduction device as a modified example of the second embodiment. The vapor phase growth apparatus 60 provided with the gas introduction apparatus 61 shown in FIG. 5 has flow path heights h3 and h4 of the first and second flow paths 31 and 32 in the inclined portion of the partition plate 65 that partitions the gas introduction pipe 62. An example in which the flow path heights h1 and h2 of the first and second flow paths 31 and 32 in the flat part other than the inclined part of the partition plate 65 are smaller than each other will be described.

  At this time, the amount of protrusion of the top plate 63 and the bottom plate 64 protruding inward of the first and second flow paths 31 and 32 in the inclined portion of the partition plate 65 is directed toward the downstream side in the gas flow direction. As a result, the flow path heights h3 and h4 of the first and second flow paths 31 and 32 are formed so as to gradually decrease toward the downstream side in the gas flow direction. Is done.

  On the other hand, the vapor phase growth apparatus 70 provided with the gas introduction device 71 shown in FIG. 6 has the channel heights h3 and h4 of the first and second channels 31 and 32 in the inclined portion of the partition plate 75 that partitions the gas introduction pipe 72. Shows an example in which the channel heights h1 and h2 of the first and second channels 31 and 32 in the flat portion other than the inclined portion of the partition plate 75 are equal.

  At this time, in the inclined portion of the partition plate 75, the amount of protrusion of the top plate 73 and the bottom plate 74 protruding inwardly of the first and second flow paths 31 and 32 is accompanied by going toward the downstream side in the gas flow direction. However, since the increase amount corresponds to the inclination of the inclined portion of the partition plate 75, the channel heights h3 and h4 of the first and second channels 31 and 32 are in the flat portion of the partition plate 75. It is formed to be equal to the flow path heights h1 and h2.

  FIG. 7 is a cross-sectional view showing a simplified configuration of a vapor phase growth apparatus 80 including a gas introduction apparatus 81 according to the third embodiment of the present invention. The vapor phase growth apparatus 80 of this embodiment is similar to the vapor phase growth apparatus 20 including the gas introduction device 21 according to the first embodiment, and corresponding portions are denoted by the same reference numerals and description thereof is omitted. .

  It should be noted that in the vapor phase growth apparatus 80 including the gas introduction apparatus 81, the thickness of the partition plate 85 that divides the gas introduction pipe 82 into the two first and second flow paths 31 and 32 allows the raw material gas to flow. It is formed so as to decrease stepwise as it goes from the upstream side to the downstream side.

  In the gas introducing device 81, a stepwise thickness reduction portion is formed on the surface of the partition plate 85 facing the first flow path 31. Therefore, the flow path height h3 of the first flow path 31 in the stepwise thickness reduction portion of the partition plate 85 does not increase with respect to the flow path height h1 of the first flow path 31 in the flat portion of the partition plate 85. As described above, the side of the top plate 83 facing the first flow path 31 corresponds to the stepwise decrease in the thickness of the partition plate 85, and faces inward of the first flow path 31 so that the thickness increases stepwise. Projecting.

  If a stepwise thickness change portion is formed on the inner surfaces of the partition plate 85 and the top plate 83, the flow path is flexibly changed in the thickness change portion, so that the gas flow also flexibly changes. However, if the amount of change at each stage of thickness change is about 0.5 mm or less, the gas flow is not greatly affected. Since the partition plate 85 and the top plate 83 whose thickness decreases in stages are easier to process than the case where the thickness is continuously decreased, the members can be easily manufactured at low cost.

  FIG. 8 is a cross-sectional view showing a simplified configuration of a vapor phase growth apparatus 90 including a gas introduction apparatus 91 according to the fourth embodiment of the present invention. The vapor phase growth apparatus 90 including the gas introduction apparatus 91 according to the present embodiment is similar to the vapor phase growth apparatus 80 including the gas introduction apparatus 81 according to the third embodiment, and corresponding portions are denoted by the same reference numerals. Therefore, the description is omitted.

  It should be noted in the gas introduction device 91 that the partition plate 95 that divides the internal space of the gas introduction pipe 92 into the first and second flow paths 31 and 32, the surface facing the first flow path 31, and the second flow A stepwise thickness reduction portion is formed on both the side facing the path 32.

  In the gas introduction device 91, stepwise thickness reduction portions are formed on both sides of the partition plate 95 facing the first and second flow paths 31 and 32, respectively. Therefore, corresponding to the stepwise thickness reduction portion of the partition plate 85, a portion where the thickness increases stepwise is formed on the inner surface of the top plate 93 so as to protrude inward of the first flow path 31. At the same time, the flow path height h4 of the second flow path 32 in the stepwise thickness reduction portion of the partition plate 95 does not increase with respect to the flow path height h2 of the second flow path 32 in the flat portion of the partition plate 95. As described above, the side of the bottom plate 94 facing the second flow path 32 corresponds to the stepwise decrease in the thickness of the partition plate 95 and is directed inward of the second flow path 32 so that the thickness increases stepwise. Projecting.

  In any of the third and fourth embodiments, the width of the flow path formed by the first side wall member 25 and the second side wall member 26 is formed to be constant between the upstream side and the downstream side of the joining portion. In addition, at least the downstream channel height of the junction is formed so as not to increase more than the sum of the upstream channel heights. Therefore, the cross-sectional area of the merging flow path 34 in a cross section perpendicular to the gas flow direction is a cross section perpendicular to the gas flow direction of the first and second flow paths 31 and 32 upstream of the merging portion. It is formed so as not to increase more than the sum of the areas.

  FIG. 9 is a cross-sectional view showing a configuration of a vapor phase growth apparatus 100 including a gas introduction device 101 according to the fifth embodiment of the present invention. The vapor phase growth apparatus 100 including the gas introduction apparatus 101 according to the present embodiment includes a vapor phase growth apparatus 50 including the gas introduction apparatus 51 according to the second embodiment and a vapor growth apparatus 90 including the gas introduction apparatus 91 according to the fourth embodiment. Similar parts corresponding to each other are designated by the same reference numerals and description thereof is omitted.

  What should be noted in the vapor phase growth apparatus 100 including the gas introduction apparatus 101 is a partition plate 95 having stepwise thickness reduction portions on both sides as in the fourth embodiment, and corresponds to the thickness reduction of the partition plate 95. Then, as it goes downstream in the gas flow direction as in the second embodiment, it protrudes into the first and second flow paths 31 and 32 so as to gradually and continuously increase the protruding amount. And a gas introduction pipe 52 having a top plate 53 and a bottom plate 54 formed in combination.

  FIG. 10 is a cross-sectional view showing a configuration of a vapor phase growth apparatus 102 including a gas introduction apparatus 103 according to the sixth embodiment of the present invention. The vapor phase growth apparatus 102 including the gas introduction apparatus 103 according to the present embodiment includes a vapor phase growth apparatus 20 including the gas introduction apparatus 21 according to the first embodiment and a vapor growth apparatus 80 including the gas introduction apparatus 81 according to the third embodiment. Similar parts corresponding to each other are designated by the same reference numerals and description thereof is omitted.

  It should be noted that in the vapor phase growth apparatus 102 including the gas introduction apparatus 103, the partition plate 28 having an inclined portion which is a continuous thickness reduction portion on one side as in the first embodiment, and the third embodiment. In response to the gradual decrease in the thickness of the partition plate 85 as described above, the gas introduction having the top plate 83 formed to protrude inward of the first flow path 31 so as to increase the gradual thickness. The tube 82 is provided in combination.

  Also in the vapor phase growth apparatus provided with the gas introduction device according to the fifth and sixth embodiments, which is a combination of the gas introduction pipe and the partition plate, as shown in FIGS. Effects similar to those of the vapor phase growth apparatus including the four types of gas introduction apparatuses can be obtained.

  FIG. 11 is a cross-sectional view showing a configuration of a vapor phase growth apparatus 110 including a gas introduction apparatus 111 according to the seventh embodiment of the present invention. The vapor phase growth apparatus 110 including the gas introduction apparatus 111 of the present embodiment is similar to the vapor phase growth apparatus 50 including the gas introduction apparatus 51 of the second embodiment, and corresponding portions are denoted by the same reference numerals. The description is omitted.

  It should be noted that the gas introduction device 111 has two first and second partition plates 115 and 116, and the inner space of the gas introduction pipe 112 is partitioned by the two partition plates 115 and 116. That is, the first to third flow paths 117, 118, and 119 are formed. The first to third flow paths 117, 118, and 119 are formed in this order from the top plate 113 toward the bottom plate 114. Therefore, in the gas introduction device 111, gas introduction ports are also formed for the first to third flow paths 117, 118, and 119, respectively, and the introduction connection members 33 provided in the gas introduction ports 109a, 109b, and 109c are provided. Thus, three kinds of source gases can be introduced into the first to third flow paths 117, 118, and 119, respectively.

  In addition, the first partition plate 115 is formed with an inclined portion in the vicinity of the tip portion on the surface facing the first flow path 117, and the thickness thereof continuously decreases, and the second partition plate 116 has a third flow path 119. An inclined portion is formed in the vicinity of the tip portion on the surface facing the surface, and the thickness is continuously reduced. Therefore, the first and second partition plates 115 and 116 are formed so as to face the second flow path 118 and the surfaces facing each other are flat to the respective front end portions 115a and 116a in the raw material gas flow direction. Is done.

  The top plate 113 and the bottom plate 114 correspond to the inclined portions of the first and second partition plates 115 and 116, respectively, and the amount of protrusion protruding inward of the first and third flow paths 117 and 119 is the amount of gas flow. The flow path height h of the merging flow path 34 is increased as it goes to the downstream side in the direction, and the sum of the flow path heights of the first to third flow paths 117, 118, 119 before merging (h1 + h2 + h3 or h4 + h5 + h6) is formed to be equal to or less than that in the above-described embodiments.

  When the three layers of gas flowing through the first to third flow paths 117, 118, and 119 are joined at the same position, the side facing the top plate 113 of the first partition plate 115 and the bottom plate 114 of the second partition plate 116. Inclined portions where the wall thickness continuously decreases on the side facing each other, and the surface on the side facing the partition plates remains flat, and the amount of inward projection of the top plate 113 and the bottom plate 114 is increased. If the relationship between the flow path heights is satisfied by adjustment, the partition plates 115 and 116, the top plate 113, and the bottom plate 114 can be easily manufactured, and the manufacturing cost can be reduced.

  For example, if the surface of one partition plate facing the top plate or the bottom plate is made flat to the tip of the partition plate, the height of the flow path formed by the partition plates for the other partition plate In order not to increase the distance, it is necessary to bend and attach the tip of the other partition plate, which makes it difficult to work and assemble.

  FIG. 12 is a cross-sectional view showing a simplified configuration of a vapor phase growth apparatus 120 including a gas introduction device 121 according to an eighth embodiment of the present invention. The vapor phase growth apparatus 120 including the gas introduction apparatus 121 of the present embodiment is similar to the vapor phase growth apparatus 110 including the gas introduction apparatus 111 of the seventh embodiment, and corresponding portions are denoted by the same reference numerals. The description is omitted.

  It should be noted in the gas introduction device 121 that the second partition plate 126 is longer in the gas flow direction than the first partition plate 115, and the source gas and the second flow flowing through the first flow path 117. The position where the raw material gas flowing through the path 118 merges is different from the position where the raw material gas flowing through the third flow path 119 and the raw material gas flowing through the remaining flow path merge. In this gas introduction device 121, the amount by which the bottom plate 124 projects inward of the third flow path 119 is set to correspond to the shape and length of the inclined portion of the second partition plate 126.

  The vapor phase growth apparatus 120 including the gas introduction apparatus 121 of the present embodiment can also achieve the same effects as the vapor phase growth apparatus 110 including the gas introduction apparatus 111 of the seventh embodiment.

  In the gas introduction devices 111 and 121 according to the seventh and eighth embodiments, the partition plate is continuously reduced in thickness, and the top plate and the bottom plate facing the partition plate continuously project the amount of projection into the gas introduction pipe. However, the present invention is not limited to this, and any one of the partition plate, the top plate, the bottom plate, or all of them is configured so that the thickness or the protruding amount thereof changes stepwise. Even if it is done, the same effect can be acquired.

  FIG. 13 is a top view showing a simplified configuration of a vapor phase growth apparatus 130 including a gas introduction apparatus 131 according to the ninth embodiment of the present invention, and FIG. 14 is viewed from the section line XIV-XIV in FIG. It is a figure. The vapor phase growth apparatus 130 including the gas introduction apparatus 131 of the present embodiment is similar to the vapor phase growth apparatus 20 including the gas introduction apparatus 21 of the first embodiment, and corresponding portions are denoted by the same reference numerals. The description is omitted.

  It should be noted in the gas introduction device 131 that the gas introduction pipe 132 and the reaction pipe 137 connected to the gas introduction pipe 132 and extending downstream in the gas flow direction of the gas introduction pipe 132 are made of different materials. The cooling means 138 is provided outside the gas introduction pipe 132 and cools the gas introduction pipe 132.

  The top plate 133, the bottom plate 134, and the first and second side wall members 135 and 136 constituting the gas introduction pipe 132 of the gas introduction device 131 are made of metal such as stainless steel. Since stainless steel has high rigidity and excellent workability, it is possible to obtain the gas introduction pipe 132 having a desired shape with high accuracy and low cost. On the other hand, the reaction tube 137 connected to the gas introduction tube 132 on the downstream side in the gas flow direction of the gas introduction tube 132 removes thermal expansion caused by a temperature rise when the substrate 22 is heated and reaction product deposits with a chemical solution. For example, quartz is formed in consideration of cleaning.

  Since the stainless steel forming the gas introduction tube 132 has a higher coefficient of thermal expansion than the quartz forming the reaction tube 137, adverse effects such as deformation due to a temperature rise accompanying heating of the substrate 22 are a concern. Therefore, the gas introduction device 131 of the present embodiment is provided with the cooling means 138 outside the gas introduction pipe 132.

  The cooling means 138 includes a cooling tank 141 provided so as to form one sealed space on the outer periphery of the gas introduction pipe 132, and a refrigerant supply pipe that is connected to the cooling tank 141 and supplies the refrigerant 144 to the inside of the cooling tank 141. 142, a refrigerant discharge pipe 143 that is connected to the cooling tank 141 and discharges the refrigerant 144 inside the cooling tank 141, is connected to the refrigerant supply pipe 142 and supplies the refrigerant 144, and is also connected to the refrigerant discharge pipe 143. And a refrigerant supply source (not shown) from which the refrigerant 144 is recovered through the refrigerant discharge pipe 143. For example, water is preferably used as the refrigerant 144. When water is used as the refrigerant 144, for example, a combination of a water tank and a pressure pump is used as the refrigerant supply source.

  By circulating, for example, water 144, which is a refrigerant, in the cooling tank 141, the gas introduction pipe 132 and the inner partition plate 28 can be cooled to suppress an increase in temperature. By suppressing the temperature rise, it is possible to suppress the thermal expansion deformation of the gas introduction pipe 132 and the partition plate 28, and therefore, the shape change around the confluence portion of the source gas in the gas introduction device 131, that is, the disturbance of the gas flow is suppressed. be able to.

  In the present embodiment, the case where the gas introduction pipe 132 and the reaction pipe 137 are divided into two pieces is illustrated, but the present invention is not limited to this, and the pipe forming the gas flow path is divided into three or more pieces of different materials. It may be configured. When the pipe | tube which makes a gas flow path is divided | segmented into several pieces, the structure by which a partition plate is divided | segmented similarly may be sufficient.

  Further, in this embodiment, the case where the two layers of source gases of the first and second flow paths 31 and 32 are merged is illustrated, but there are three or more flow paths so that the gases of three or more layers are merged. May be configured.

  In the present embodiment, the partition plate is continuously reduced in thickness and the amount of protrusion of the top plate facing the partition plate to the inside of the gas introduction pipe is continuously increased. However, the present invention is not limited to this. The same effect can be obtained even if any of the partition plate, the top plate, the bottom plate, or all of them are configured such that the thickness or the amount of protrusion changes stepwise.

  FIG. 15 is a partial cross-sectional perspective view showing a simplified configuration of the vapor phase growth apparatus 150 including the gas introduction apparatus 151 according to the tenth embodiment of the present invention. The vapor phase growth apparatus 150 including the gas introduction apparatus 151 according to the present embodiment is similar to the vapor phase growth apparatus 20 including the gas introduction apparatus 21 according to the first embodiment in the basic configuration, and the same reference is made to corresponding parts. The reference numerals are attached and the description is omitted.

  It should be noted in the vapor phase growth apparatus 150 including the gas introduction apparatus 151 that the first and second flow paths 31 and 32 through which the source gas flows and the front end 152a of the partition plate 152 in the direction of the source gas flow are provided. One merging flow path 34 formed by merging two layers of source gas is formed radially.

  In the gas introduction device 151, the top plate 153, the bottom plate 154, and the partition plate 152 are formed so that all of the shapes viewed from the upper surface (plane) are circular. The first and second gas introduction ports 156 and 157 for introducing the raw material gas into the gas introduction pipe 155 constituted by the top plate 153 and the bottom plate 154 are opened at the circular center portion of the top plate 153 and the partition plate 152. It is provided by forming.

  In this embodiment, a two-layer pipe 158 is used as an introduction connecting member for introducing the source gas from the gas introduction ports 156 and 157 into the gas introduction pipe 155 so that the two-layer pipe 158 is perpendicular to the top plate 153. Are connected to gas inlets 156 and 157. The two-layer pipe 158 that is an introduction connecting member is connected to the first flow path 31 in which the outer layer flow path 161 formed by the outer pipe 159 and the inner pipe 160 is formed by the partition plate 152 and the top plate 153. An inner layer flow path 162 that is an internal space of the pipe 160 is connected to the second flow path 32 configured by the partition plate 152 and the bottom plate 154.

  Therefore, the source gas is once supplied vertically to the gas introduction pipe 155 by the outer layer flow path 161 of the two-layer pipe 158, and then the flow path is bent 90 degrees against the partition plate 152, so that the top plate 153 The first flow path 31 is allowed to flow radially in the horizontal direction along the partition plate 152. The other source gas is once supplied vertically to the gas introduction pipe 155 by the inner layer flow path 162 of the two-layer pipe 158, and then the flow path is bent by 90 degrees against the bottom plate 154. And the partition plate 152, the second flow path 32 flows radially in the horizontal direction.

  In the gas introduction apparatus 151 and the vapor phase growth apparatus 150, the first and second flow paths 31, 32 and the flow path 34 are proportional to the radius in the radial direction from the center toward the outer side. Therefore, if the flow path height of each flow path is reduced so as to be inversely proportional to the radius, the cross-sectional area of the flow path should not be constant or increased through the upstream side and the downstream side of the merge portion. It is possible to prevent a low pressure or negative pressure region from occurring on the downstream side of the joining portion.

  The vapor phase growth apparatus 150 of this embodiment places a plurality of substrates 22 radially around a two-layer tube 158 which is an introduction connecting member, and supplies a raw material gas to the plurality of substrates 22 at the same time. Therefore, efficient production can be realized.

  Further, in this embodiment, the case where the two layers of source gases of the first and second flow paths 31 and 32 are merged is illustrated, but there are three or more flow paths so that the gases of three or more layers are merged. May be configured. In the present embodiment, the partition plate is continuously reduced in thickness, and the amount of protrusion of the top plate facing the partition plate into the gas introduction pipe is continuously increased. However, the present invention is not limited to this. The same effect can be obtained even if any of the partition plate, the top plate, the bottom plate, or all of them are configured such that the thickness or the amount of protrusion changes stepwise.

  FIG. 16 is a top view showing a simplified configuration of the vapor phase growth apparatus 170 including the gas introduction apparatus 171 according to the eleventh embodiment of the present invention, and FIG. 17 is seen from the section line XVII-XVII in FIG. FIG. The vapor phase growth apparatus 170 provided with the gas introduction apparatus 171 of the present embodiment is similar to the vapor phase growth apparatus 20 of the first embodiment in that the configuration on the downstream side of the merging portion in the gas flow direction is similar. Are denoted by the same reference numerals and description thereof is omitted.

  The gas introduction device 171 includes two top plates 173 and a bottom plate 174 provided so as to face each other, and two first and second side wall members 176 provided so as to be substantially perpendicular to and opposed to the top plate 173 and the bottom plate 174. , 177 and a gas introduction pipe 172 forming a flow path for allowing a plurality of different or similar raw material gases to flow in a predetermined direction, and extending inside the gas introduction pipe 172 in the raw material gas flow direction. The first and second flows are provided in parallel to the top plate 173 and the bottom plate 174, and a plurality of source gases flow through the internal space of the gas introduction pipe 172 to the middle of the length in the source gas flow direction. And a partition plate 175 that partitions the paths 31 and 32.

  The thickness of the partition plate 175 in the gas introduction device 171 is formed so as to continuously decrease from the upstream side where the raw material gas flows to the downstream side. In the gas introduction device 171, the partition plate 175 passes through the front end portion 175 a in the raw material gas flow direction, and is perpendicular to the raw material gas flow direction of one confluence channel 34 formed by joining a plurality of raw material gases. The partition plate 175 has a cross-sectional area equal to or less than the sum of the cross-sectional areas perpendicular to the source gas flow direction of the first and second flow paths 31 and 32 through which the plurality of source gases flow. Corresponding to the continuous decrease in thickness, the separation distance between the side wall members 176 and 177 of the first and second flow paths 31 and 32 is reduced.

  The top plate 173 and the bottom plate 174 of the present embodiment are formed so that the inner wall surfaces facing the first and second flow paths 31 and 32 are flat. Therefore, even if the thickness of the partition plate 175 continuously decreases toward the downstream side in the gas flow direction in the vicinity of the front end portion, if no structural change is given, the downstream of the junction portion On the side, the channel cross-sectional area increases. Therefore, in the gas introduction device 171 of the present embodiment, the flow path width is reduced by reducing the separation distance between the side wall members 176 and 177, that is, the flow path width, so as to correspond to the reduction in the thickness of the partition plate 175. X The flow path cross-sectional area in a cross section perpendicular to the gas flow direction obtained at the flow path height is configured not to increase before and after the merge.

  The channel height of the first channel 31 in the flat portion of the partition plate 175 is h1, the channel height of the second channel 32 is h2, and the channel width is w1. The flow path height of the first flow path 31 at an arbitrary position of the inclined portion where the partition plate 175 continuously decreases in thickness is h3, the flow path height of the second flow path 32 is h4, and the flow path width. Is w2. If the flow path height of the merge flow path 34 on the downstream side in the gas flow direction from the front end 175a of the partition plate 175, that is, the downstream side of the merge section is h, and the flow path width is w3, the merge flow path 34 The cross-sectional area is given by w3 × h = S3, and the sum of the cross-sectional areas of the first flow path 31 and the second flow paths 31, 32 at the inclined portion of the partition plate 175 is given by w2 × (h3 + h4) = S2. The sum of the cross-sectional areas of the first flow path 31 and the second flow paths 31 and 32 in the flat portion of the partition plate 175 is given by w1 × (h1 + h2) = S1.

  In the gas introducing device 171 of the present embodiment, the flow path cross-sectional area S2 in the inclined portion of the partition plate 175 is in the flat portion of the partition plate so that the downstream side in the gas flow direction does not become lower pressure or negative pressure than the upstream side. The cross-sectional area (S3) of the merging channel 34 is equal to or smaller than the channel cross-sectional area S2 of the inclined portion of the partition plate 175 upstream of the merging portion so that the channel cross-sectional area S1 or less (S2 ≦ S1). The channel height and the channel width are set so as to satisfy (S3 ≦ S2).

  In addition, since the inner wall surfaces of the top plate 173 and the bottom plate 174 are formed flat, the flow path height is higher in the inclined portion than in the flat portion of the partition plate 175. Therefore, in the flat portion of the partition plate 175, The separation distance between the first side wall member 176 and the second side wall member 177 is determined so that the flow path width w1 is larger than the flow path width w2 in the inclined portion of the partition plate 175 (w2 <w1). Similarly, since the flow path height of the merged flow path 34 is higher than that of the first and second flow paths 31 and 32 in the inclined portion of the partition plate 175, the flow path width w2 in the inclined portion of the partition plate 175 is The separation distance between the first side wall member 176 and the second side wall member 177, that is, the channel width is determined so as to be larger than the channel width w3 in the merging channel 34 (w3 <w2).

  In this way, the flow channel width and flow channel height of each flow channel are set so that the relationship (S3 ≦ S2 ≦ S1) of the flow channel cross-sectional areas on the upstream side and the downstream side of the above-described merging portion is satisfied. Is set. It is preferable that the relationship between the flow path cross-sectional areas on the upstream side and the downstream side of the joining portion is the same (S1 = S2 = S3). With such a configuration, it is more than the front end portion 175a of the partition plate 175. The generation of vortices on the downstream side can be suppressed, and the gas flow rate can be kept constant without acceleration / deceleration.

  The vapor phase growth apparatus 170 including the gas introduction device 171 suppresses vortices in a wide setting range with respect to the flow velocity of the gas flow overlayer flowing through the first and second flow paths 31 and 32 partitioned by the partition plate 175. Since the combined source gases can be supplied to the substrate 22, a compound semiconductor thin film having a uniform thickness and composition can be vapor-phase grown on the surface of the substrate 22.

  Further, in this embodiment, the case where the two layers of source gases of the first and second flow paths 31 and 32 are merged is illustrated, but there are three or more flow paths so that the gases of three or more layers are merged. May be configured. Further, in the present embodiment, the partition plate is configured to continuously reduce the wall thickness, but the present invention is not limited to this, and the same is true even if the partition plate is configured so that the wall thickness changes stepwise. The effect of can be obtained.

  Any one of the vapor phase growth apparatuses shown in the first to eleventh embodiments described above is prepared, and the raw material gas is guided and supplied to the substrate 22 to be processed by the gas introduction apparatus provided in the vapor phase growth apparatus. A vapor phase growth method for forming a thin film on the surface 22 is also an embodiment of the present invention. According to this vapor phase growth method, generation of vortices in the vicinity of the confluence of source gases is suppressed, so that synthesis of heterogeneous reaction products due to gas phase reactions in the vicinity of the vortices is suppressed, and utilization efficiency of source gases is increased. It is possible to obtain a high-quality compound semiconductor thin film by suppressing the deterioration of the film and the deterioration and non-uniformity of the film quality.

  As described above, in the present embodiment, the partition plate is entirely made of metal or quartz, but is not limited to this, and only the tip portion is made of metal and the remaining portion is made of, for example, quartz. It may be a thing.

It is a top view which simplifies and shows the structure of the vapor phase growth apparatus 20 provided with the gas introduction apparatus 21 which is 1st Embodiment of this invention. It is the figure seen from the cut surface line II-II of FIG. It is a top view which simplifies and shows the structure of the vapor phase growth apparatus 50 provided with the gas introduction apparatus 51 which is 2nd Embodiment of this invention. It is the figure seen from cut surface line IV-IV of FIG. It is sectional drawing which simplifies and shows the structure of the vapor phase growth apparatus provided with the gas introducing device used as the modification example of 2nd Embodiment. It is sectional drawing which simplifies and shows the structure of the vapor phase growth apparatus provided with the gas introducing device used as the modification example of 2nd Embodiment. It is sectional drawing which simplifies and shows the structure of the vapor phase growth apparatus 80 provided with the gas introduction apparatus 81 which is 3rd Embodiment of this invention. It is sectional drawing which simplifies and shows the structure of the vapor phase growth apparatus 90 provided with the gas introduction apparatus 91 which is 4th Embodiment of this invention. It is sectional drawing which shows the structure of the vapor phase growth apparatus 100 provided with the gas introduction apparatus 101 which is 5th Embodiment of this invention. It is sectional drawing which shows the structure of the vapor phase growth apparatus 102 provided with the gas introduction apparatus 103 which is 6th Embodiment of this invention. It is sectional drawing which shows the structure of the vapor phase growth apparatus 110 provided with the gas introduction apparatus 111 which is 7th Embodiment of this invention. It is sectional drawing which simplifies and shows the structure of the vapor phase growth apparatus 120 provided with the gas introducing device 121 which is 8th Embodiment of this invention. It is a top view which simplifies and shows the structure of the vapor phase growth apparatus 130 provided with the gas introduction apparatus 131 which is 9th Embodiment of this invention. It is the figure seen from the cut surface line XIV-XIV of FIG. It is a fragmentary sectional perspective view which simplifies and shows the structure of the vapor phase growth apparatus 150 provided with the gas introducing device 151 of Embodiment 10 of this invention. It is a top view which simplifies and shows the structure of the vapor phase growth apparatus 170 provided with the gas introduction apparatus 171 of 11th Embodiment of this invention. It is the figure seen from the cut surface line XVII-XVII of FIG. It is a top view which simplifies and shows the structure of the vapor phase growth apparatus 1 which is the conventional horizontal type | mold CVD furnace. It is the figure seen from cut surface line AA of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 20 Vapor growth apparatus 21 Gas introduction apparatus 22 Substrate 23 Top plate 24 Bottom plate 25 1st side wall member 26 2nd side wall member 27 Gas introduction pipe 28 Partition plate 31 1st flow path 32 2nd flow path 34 Merge flow path 41 Reaction tube 43 Tray 44 Heating means

Claims (13)

A gas introduction device for introducing a raw material gas so as to supply a raw material gas for forming a thin film on a surface of a substrate to be processed,
A gas introduction pipe formed with at least two wall members provided so as to be opposed to each other, and forming a flow path for allowing a plurality of different or similar raw material gases to flow in a predetermined direction;
A plurality of source gases extending in the direction of the source gas flow inside the gas introduction pipe and provided in parallel to the two wall members, and extending through the internal space of the gas introduction pipe to the middle of the length in the direction of the source gas flow Each including a partition plate that partitions into a plurality of flow paths that flow through,
The height that is the distance in the direction in which the two wall members of the single confluence channel formed by joining the plural raw material gas passes through the front end of the raw material gas flow direction of the partition plate,
A gas introduction device characterized by being equal to a sum of heights, which are distances in a direction in which the two wall members of each flow path through which a plurality of source gases flow, face each other. A gas introduction device for introducing a raw material gas so as to supply a raw material gas for forming a thin film on a surface of a substrate to be processed,
A gas introduction pipe formed with at least two wall members provided so as to be opposed to each other, and forming a flow path for allowing a plurality of different or similar raw material gases to flow in a predetermined direction;
A plurality of source gases extending in the direction of the source gas flow inside the gas introduction pipe and provided in parallel to the two wall members, and extending through the internal space of the gas introduction pipe to the middle of the length in the direction of the source gas flow Each including a partition plate that partitions into a plurality of flow paths that flow through,
The height that is the distance in the direction in which the two wall members of the single confluence channel formed by joining the plural raw material gas passes through the front end of the raw material gas flow direction of the partition plate,
The sum of the heights, which are the distances in the direction in which the two wall members of each flow path through which each of the plurality of source gases flow, is opposite,
The thickness of the partition plate, from the upstream side of the raw material gas flows through along with the other side to the downstream side, characterized and to Ruga scan introducing device to be formed so as to decrease continuously. A gas introduction device for introducing a raw material gas so as to supply a raw material gas for forming a thin film on a surface of a substrate to be processed,
A gas introduction pipe formed with at least two wall members provided so as to be opposed to each other, and forming a flow path for allowing a plurality of different or similar raw material gases to flow in a predetermined direction;
A plurality of source gases extending in the direction of the source gas flow inside the gas introduction pipe and provided in parallel to the two wall members, and extending through the internal space of the gas introduction pipe to the middle of the length in the direction of the source gas flow Each including a partition plate that partitions into a plurality of flow paths that flow through,
The height that is the distance in the direction in which the two wall members of the single confluence channel formed by joining the plural raw material gas passes through the front end of the raw material gas flow direction of the partition plate,
The sum of the heights, which are the distances in the direction in which the two wall members of each flow path through which each of the plurality of source gases flow, is opposite,
The thickness of the partition plate, from the upstream side of the raw material gas flows through along with the other side to the downstream side, characterized and to Ruga scan introducing device to be formed so as to decrease stepwise. A gas introduction device for introducing a raw material gas so as to supply a raw material gas for forming a thin film on a surface of a substrate to be processed,
A gas introduction pipe formed with at least two wall members provided so as to be opposed to each other, and forming a flow path for allowing a plurality of different or similar raw material gases to flow in a predetermined direction;
A plurality of source gases extending in the direction of the source gas flow inside the gas introduction pipe and provided in parallel to the two wall members, and extending through the internal space of the gas introduction pipe to the middle of the length in the direction of the source gas flow Each including a partition plate that partitions into a plurality of flow paths that flow through,
The height that is the distance in the direction in which the two wall members of the single confluence channel formed by joining the plural raw material gas passes through the front end of the raw material gas flow direction of the partition plate,
The sum of the heights, which are the distances in the direction in which the two wall members of each flow path through which each of the plurality of source gases flow, is opposite,
Three flow paths are formed including two partition plates,
The two dividers are
Features and to Ruga scan introducing device that has a side surface opposite to each other are formed to be flat to the distal end of the feed gas stream over direction. A gas introduction device for introducing a raw material gas so as to supply a raw material gas for forming a thin film on a surface of a substrate to be processed,
A gas introduction pipe formed with at least two wall members provided so as to be opposed to each other, and forming a flow path for allowing a plurality of different or similar raw material gases to flow in a predetermined direction;
A plurality of source gases extending in the direction of the source gas flow inside the gas introduction pipe and provided in parallel to the two wall members, and extending through the internal space of the gas introduction pipe to the middle of the length in the direction of the source gas flow Each including a partition plate that partitions into a plurality of flow paths that flow through,
The height that is the distance in the direction in which the two wall members of the single confluence channel formed by joining the plural raw material gas passes through the front end of the raw material gas flow direction of the partition plate,
The sum of the heights, which are the distances in the direction in which the two wall members of each flow path through which each of the plurality of source gases flow, is opposite,
Partition plate, at least near the end, features and be Ruga scan introducing device that consists of a metal in the downstream side in the direction the material gas flows through. 6. The gas introducing device according to claim 5 , wherein the metal is stainless steel. A gas introduction device for introducing a raw material gas so as to supply a raw material gas for forming a thin film on a surface of a substrate to be processed,
A gas introduction pipe formed with at least two wall members provided so as to be opposed to each other, and forming a flow path for allowing a plurality of different or similar raw material gases to flow in a predetermined direction;
A plurality of source gases extending in the direction of the source gas flow inside the gas introduction pipe and provided in parallel to the two wall members, and extending through the internal space of the gas introduction pipe to the middle of the length in the direction of the source gas flow Each including a partition plate that partitions into a plurality of flow paths that flow through,
The height that is the distance in the direction in which the two wall members of the single confluence channel formed by joining the plural raw material gas passes through the front end of the raw material gas flow direction of the partition plate,
The sum of the heights, which are the distances in the direction in which the two wall members of each flow path through which each of the plurality of source gases flow, is opposite,
Provided outward of the gas inlet tube, features and be Ruga scan introducing device further comprising a cooling means for cooling the gas introduction pipe. Each flow path through which a plurality of source gases flow formed by the partition plate, and one merge channel formed by a plurality of source gas merging past the front end portion of the partition plate in the source gas flow direction Is
Ri rectangular der shape in cross section perpendicular to the flow-direction of the material gas,
The sum of the cross-sectional areas perpendicular to the source gas flow direction of each flow path through which each of the plurality of source gases flows, and the plurality of source gases merge past the tip of the partition plate in the source gas flow direction. and the cross-sectional area perpendicular to one of the feed gas stream over the direction of the converging channels being formed by the, features and be Ruga scan introducing device is equal. A gas introduction device for introducing a raw material gas so as to supply a raw material gas for forming a thin film on a surface of a substrate to be processed,
A gas introduction pipe formed with at least two wall members provided so as to be opposed to each other, and forming a flow path for allowing a plurality of different or similar raw material gases to flow in a predetermined direction;
A plurality of source gases extending in the direction of the source gas flow inside the gas introduction pipe and provided in parallel to the two wall members, and extending through the internal space of the gas introduction pipe to the middle of the length in the direction of the source gas flow Each including a partition plate that partitions into a plurality of flow paths that flow through,
The height that is the distance in the direction in which the two wall members of the single confluence channel formed by joining the plural raw material gas passes through the front end of the raw material gas flow direction of the partition plate,
The sum of the heights, which are the distances in the direction in which the two wall members of each flow path through which each of the plurality of source gases flow, is opposite,
Each flow path through which a plurality of source gases flow, and one merged path formed by joining a plurality of source gases past the front end of the partition plate in the source gas flow direction,
A gas introduction device characterized by being formed radially. A gas introduction device for introducing a raw material gas so as to supply a raw material gas for forming a thin film on a surface of a substrate to be processed,
Two wall members provided so as to be opposed to each other and two side wall members provided so as to be substantially perpendicular to and opposed to the two wall members are formed. A gas introduction pipe that forms a flow path for flowing in a predetermined direction;
A plurality of source gases extending in the direction of the source gas flow inside the gas introduction pipe and provided in parallel to the two wall members, and extending through the internal space of the gas introduction pipe to the middle of the length in the direction of the source gas flow Each including a partition plate that partitions into a plurality of flow paths that flow through,
The thickness of the partition plate is formed so as to decrease continuously or stepwise as the raw material gas flows from the upstream side to the downstream side,
A cross-sectional area perpendicular to the raw material gas flow direction of one confluence channel formed by joining a plurality of raw material gases past the leading end portion of the raw material gas flow direction of the partition plate,
The sum of the cross-sectional areas perpendicular to the source gas flow direction of each flow path through which each of the plurality of source gases flows is equal to or less than the sum.
Corresponding to the thickness of the partition plate decreasing continuously or stepwise, the separation distance between the two side wall members of each flow path through which a plurality of source gases flow is reduced. Gas introduction device. The sum of the cross-sectional areas perpendicular to the source gas flow direction of each flow path through which each of the plurality of source gases flows, and the plurality of source gases merge past the tip of the partition plate in the source gas flow direction. The gas introduction device according to claim 10 , wherein a cross-sectional area perpendicular to a raw material gas flow direction of one merging flow path formed in the same manner is equal. A vapor phase growth apparatus comprising the gas introduction device according to any one of claims 1 to 11 . A vapor phase growth apparatus according to claim 12 is prepared,
A vapor phase growth method comprising: forming a thin film on a surface of a substrate by introducing and supplying a source gas to the substrate to be processed by a gas introduction device provided in the vapor phase growth apparatus.

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