JP2004063555A - Semiconductor fabricating apparatus and its fabricating process - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enable mixed raw gases to flow almost in parallel with a surface of a substrate in a semiconductor fabricating apparatus equipped with a horizontal MOCVD crystal growth furnace. <P>SOLUTION: There are provided, at an upstream side of an internal reaction tube 102, an underlayer introducing passage 102a for introducing the raw gases containing 5 group atom sources, an middle-layer introducing passage 102b for introducing the raw gases containing 3 group atom sources, and an upper-layer introducing passage 102c for introducing the raw gases containing subflow gases. In the internal reaction tube 102, there is provided, at an upstream side of a susceptor 120, a gas throttling portion 102d for reducing the cross-sectional area of a flow passage of the mixed gases as well as for mixing the raw gases. The gas throttling portion 102d is formed by providing a sloping portion 104a where a second partition plate 104 is made lower in height toward a downstream of the gases. A portion between the gas throttling portion 102d of the second partition plate 104 and the susceptor 120 is provided so as to be almost in parallel with a surface of a wafer 110. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor manufacturing apparatus for manufacturing a semiconductor by introducing a subflow gas in a layer shape substantially parallel to a substrate surface above a first raw material gas and a raw material gas thereof, and a manufacturing method thereof.
[0002]
[Prior art]
A compound semiconductor composed of a group III element and a group V element such as aluminum (Al), gallium (Ga), and indium (In) is a direct-transition semiconductor having a relatively large band gap, that is, a wide gap, and is visible. It is most promising as a light emitting material ranging from light to ultraviolet light.
[0003]
Therefore, there is a need for an excellent semiconductor manufacturing method for growing gallium nitride (GaN), which is a material for these optical semiconductor devices, and a III-V nitride semiconductor containing the same as a main component in a crystallographically high quality manner. . Among them, the metalorganic chemical vapor deposition (MOCVD) method is being researched and developed in various fields as a powerful crystal growth method that can be realized at an industrial level.
[0004]
Hereinafter, a conventional so-called horizontal MOCVD crystal growth furnace for introducing a source gas in parallel with the substrate surface will be described with reference to the drawings.
[0005]
FIG. 8 is a schematic cross-sectional view of a conventional horizontal MOCVD crystal growth furnace described in JP-A-11-354456.
[0006]
As shown in FIG. 8, the introduction side of the source gas introduction nozzle 11 has a first introduction layer 11a for introducing a source gas containing a Group V source, and a second introduction layer 11b for introducing a source gas containing a Group III source. And a third introduction layer 11c for introducing a subflow gas composed of an inert gas such as hydrogen, nitrogen or argon.
[0007]
Further, the source gas introduction nozzle 11 has a gas restricting portion 11d that narrows an upper portion of the susceptor 14 holding the substrate 13 downward toward the downstream side of the gas.
[0008]
By the gas constriction section 11d, the sub-flow gas introduced from the third introduction layer 11c is supplied to the substrate at the mixing portion where the source gases flowing through the first introduction layer 11a and the second introduction layer 11b are combined and mixed. 13 above.
[0009]
Further, a bent portion 12 that bends downward as gas movement control means is provided at an end of the boundary wall between the second introduction layer 11b and the third introduction layer 11c on the substrate 13 side. . The gas throttle 11d and the bent portion 12 keep the height of the gas flow above the substrate 13 as low as possible, thereby suppressing the instability of the heat convection of the mixed gas. Thereby, the vortex generated in the mixed gas is suppressed, so that the mixed gas flows substantially parallel to the substrate surface.
[0010]
[Problems to be solved by the invention]
However, the conventional horizontal MOCVD crystal growth furnace has a relatively large volume gas throttle 11d above the susceptor 14 in the source gas introduction nozzle 11, so that heat is particularly generated near the upstream side of the susceptor 14. A vortex is generated due to instability of convection, or the mixed source gas is not sufficiently supplied to the vicinity of the surface of the substrate 13 and deposits adhere to the inner surface of the gas throttle 11d. That is, in the conventional horizontal MOCVD crystal growth furnace, there is a problem that the mixed source gas cannot be actually supplied on the surface of the substrate 13 so as to be parallel to the surface.
[0011]
SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional problems and to enable a mixed source gas to be supplied substantially parallel to the surface of a substrate in a semiconductor manufacturing apparatus having a horizontal MOCVD crystal growth furnace. And
[0012]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides a semiconductor manufacturing apparatus, wherein a gas throttle section for mixing a source gas and controlling a flow of a mixed gas is provided upstream of a substrate, and further, an introduction path for the mixed gas is provided on the substrate. The structure is provided so as to be substantially parallel to the surface.
[0013]
Specifically, the semiconductor manufacturing apparatus according to the present invention is configured such that a first raw material gas composed of a hydrogen compound and a second raw material gas composed of an organometallic compound are formed on a substrate so as to be substantially parallel to the substrate surface and in a layered manner. The present invention is directed to a semiconductor manufacturing apparatus for manufacturing a semiconductor on a substrate by introducing a sub-flow gas in a layer shape substantially parallel to the substrate surface and above the first source gas and the second source gas. A first introduction path for introducing the first source gas, a second introduction path for flowing the second source gas, a third introduction path for introducing the sub-flow gas, a first introduction path and a second introduction path. 2 is opened upstream of the substrate to generate a mixed gas in which the first raw material gas and the second raw material gas are mixed, and the upper part thereof becomes lower toward the downstream of the mixed gas. And a gas throttle provided in the gas throttle. Introduction path of the mixed gas between the is provided so as to be substantially parallel to the substrate surface.
[0014]
According to the semiconductor manufacturing apparatus of the present invention, since the introduction path of the mixed gas between the gas throttle unit and the substrate is provided so as to be substantially parallel to the substrate surface, the first source gas and the second source gas are provided. Due to the pressing effect of the subflow gas, the mixed gas obtained by mixing the gases is supplied smoothly and parallel to the substrate surface up to the vicinity of the surface of the substrate. As a result, an extremely high-quality crystallographic semiconductor can be formed on the substrate.
[0015]
In the semiconductor manufacturing apparatus of the present invention, it is preferable that the third introduction path is formed along the upper surface of the second introduction path.
[0016]
In the semiconductor manufacturing apparatus of the present invention, the first introduction path, the second introduction path, and the third introduction path are sequentially provided from the lower side, and the first introduction path is provided at an end of the first introduction path on the side of the gas throttle unit. Is preferably provided with a bent portion bent downward.
[0017]
When a compound semiconductor is formed by thermally reacting a first source gas composed of a hydrogen compound and a second source gas composed of an organometallic compound, generally, a supply molar ratio of the hydrogen compound to the organometallic compound is increased. The ratio is about 10,000 times. Therefore, as in the present invention, when the first source gas made of a hydrogen compound having a large supply molar ratio is introduced from the lowermost first introduction path, the first source gas is supplied to the inclined ceiling of the gas throttle section. The flow rate of the second raw material gas having a small supply molar ratio is not hindered because the second raw material gas is hard to hit.
[0018]
In this case, the bent portion is preferably provided so as to approach toward the downstream side of the inclined ceiling portion in the gas throttle portion.
[0019]
In this case, the downstream end of the bent portion is preferably provided so as to have the same height as the upper portion of the mixed gas introduction path.
[0020]
In this case, it is preferable that a parallel portion substantially parallel to the substrate surface is provided at the downstream end of the bent portion.
[0021]
Further, in this case, the cross-sectional area of the second introduction path in the vicinity of the first raw material gas and the second raw material gas in the gas throttle section is 20% or less of the cross-sectional area of the first introduction gas. It is preferable that
[0022]
In the semiconductor manufacturing apparatus of the present invention, the hydrogen compound preferably contains nitrogen, the organometallic compound contains a group III element, and the semiconductor is preferably a group III-V nitride semiconductor.
[0023]
In the method for manufacturing a semiconductor according to the present invention, a first source gas composed of a hydrogen compound and a second source gas composed of an organometallic compound are introduced into a substrate substantially in parallel with and in a layer form on a substrate. The sub-flow gas is introduced into the upper side of the first source gas and the second source gas in a layer substantially in parallel with the substrate surface, and the first source gas and the second source gas are mixed on the substrate side to form a mixed gas. The pressure of the vicinity where the first source gas and the second source gas are mixed is set to be upstream of the second source gas. Partial pressure is also small.
[0024]
As described above, since the molar supply ratio of the second source gas composed of the organometallic compound to the first source gas composed of the hydrogen compound is extremely small, the first source gas is compared in the region where the source gas is mixed. When the flow rate is relatively high, the second raw material gas tends to stay. However, according to the semiconductor manufacturing method of the present invention, the pressure in the vicinity of the mixed gas in the second source gas becomes lower than the pressure in the upstream portion of the second source gas. Since the flow velocity of the raw material gas in the vicinity of the mixed gas is increased, the stagnation of the second raw material gas can be prevented. As a result, the mixed gas obtained by mixing the first source gas and the second source gas is supplied in parallel to the surface of the substrate up to near the surface of the substrate, and the crystallographic In the method for producing a semiconductor according to the present invention, which can form a very high-quality semiconductor film, the hydrogen compound contains nitrogen, the organometallic compound contains a group III element, and the semiconductor is a group III-V nitride semiconductor. Is preferred.
[0025]
BEST MODE FOR CARRYING OUT THE INVENTION
(1st Embodiment)
A first embodiment of the present invention will be described with reference to the drawings.
[0026]
FIG. 1 shows a semiconductor manufacturing apparatus according to a first embodiment of the present invention, and shows a schematic cross-sectional configuration of a horizontal MOCVD crystal growth furnace.
[0027]
As shown in FIG. 1, a horizontal MOCVD crystal growth furnace 100 </ b> A according to the first embodiment is made of quartz glass and includes an external reaction tube 101 and an internal reaction tube 102 provided inside the external reaction tube 101. It is configured.
[0028]
On the upstream side of the internal reaction tube 102, a lower layer introduction passage 102 a partitioned by a first partition plate 103 and introducing a first source gas containing, for example, ammonia (NH ₃ ), which is a group V source, A middle introduction passage 102b for introducing a second source gas containing a group III source, for example, trimethylgallium (TMG), and a nitrogen (N ₂ ), hydrogen (H ₂ ) or argon (Ar) An upper layer introduction path 102c for introducing a subflow gas made of an inert gas such as a gas is provided.
[0029]
On the downstream side of the internal reaction tube 102, a susceptor 120 made of, for example, silicon carbide (SiC) and holding a wafer (substrate) 110 made of, for example, sapphire, has a lower portion of the internal reaction tube 102 spread outward. It is embedded in the extension.
[0030]
An RF coil 130 for heating the susceptor 120, that is, the wafer 110, is attached to a portion of the outer reaction tube 101 that covers the susceptor 120.
[0031]
As a feature of the first embodiment, the first reaction gas and the second reaction gas are mixed in the internal reaction tube 102 to generate a mixed gas, and the cross-sectional area of the generated mixed gas is reduced. The gas throttle unit 102d is provided on the upstream side of the susceptor 120.
[0032]
The gas throttle portion 102d is formed by providing an inclined portion 104a in which the height of the upper part of the internal reaction tube 102 and the second partition plate 104 is reduced toward the downstream of the gas.
[0033]
Further, portions between the gas throttle portion 102 d and the susceptor 120 in the internal reaction tube 102 and the second partition plate 104 are both provided so as to be substantially parallel to the surface of the wafer 110.
[0034]
With this configuration, the mixed gas containing the first source gas and the second source gas mixed in the gas throttle unit 102d is brought close to the surface of the wafer 110 to the vicinity of the surface of the wafer 110 by the pressing effect of the subflow gas. The supply is made substantially parallel and smoothly. As a result, a semiconductor made of gallium nitride (GaN) having excellent crystallinity can be formed on the main surface of wafer 110 by growth.
[0035]
Here, as growth conditions for the gallium nitride semiconductor, ammonia gas is introduced at a flow rate of about 6 m / s from the lower layer introduction path 102a, and TMG and hydrogen gas for diluting the TMG are introduced from the middle layer introduction path 102b. The gas is introduced at a flow rate of 4 m / s, and a nitrogen gas and a hydrogen gas mixed at a ratio of 1: 1 are introduced at a flow rate of about 6 m / s from the upper layer introduction path 102c.
[0036]
The average flow velocity of the mixed source gas and subflow gas is set to be approximately 0.6 m / s on the susceptor 120, and the pressure on the susceptor 120 is set to be about 0.5 atm. Have been.
[0037]
(Second embodiment)
Hereinafter, a second embodiment of the present invention will be described with reference to the drawings.
[0038]
The second embodiment has a configuration in which a higher-quality semiconductor can be obtained compared to the horizontal MOCVD crystal growth furnace 100A according to the first embodiment.
[0039]
The present inventors have made various studies on the configuration of the horizontal MOCVD crystal growth furnace 100A according to the first embodiment, and have found the following improvements.
[0040]
First, the pressure distribution of the mixed gas in the gas narrowing portion 102d of the horizontal MOCVD crystal growth furnace 100A according to the first embodiment was investigated using FIG. 2 in which the gas narrowing portion 102d shown in FIG. 1 was enlarged.
[0041]
Generally, when a group III-V nitride semiconductor is formed on a wafer by crystal growth using a horizontal MOCVD crystal furnace, the amount of ammonia which is a group V source is smaller than the supply amount of a group III source such as TMG. It is necessary to significantly increase the supply amount of. For example, the molar supply ratio of ammonia to TMG (V / III ratio) is as high as 10,000. Therefore, the flow rate of the ammonia gas is larger than the flow rate of the gas containing the group III source.
[0042]
Therefore, as shown in FIG. 2, the ammonia gas having a large flow rate, that is, the ammonia gas indicated by the stream line 200 having a large flow velocity collides with the inclined portion 104 a of the second partition plate 104, and the flow velocity of the ammonia gas becomes extremely small. According to Bernoulli's theorem, a high-pressure area 201 having a higher pressure than the surrounding area is locally generated in the vicinity of the collision portion, and as a result, the pressure is locally increased in a direction indicated by an arrow.
[0043]
For this reason, the gas containing TMG having a lower flow rate than the ammonia gas flowing through the middle-layer introduction passage 102b is pushed back by the high-pressure region 201, so that the vortex generation region 202 is provided upstream of the high-pressure region 201 of the gas throttle portion 102d. Are formed steadily, and as a result, a relatively large eddy current is generated in the eddy current generation region 202.
[0044]
The eddy current generation region 202 disturbs the gas flow of the mixed gas toward the wafer 110, and when switching from one source gas to another source gas, even after one source gas is switched, the The stagnation in the vortex makes it difficult to control the film at the atomic level in the growing semiconductor crystal. In addition, the vortex generation region 202 also causes the stagnation of the intermediate product due to the gas phase reaction, and the intermediate product often accumulates inside the inclined portion 104a, and the accumulated intermediate product promotes the turbulence of the gas flow. I do.
[0045]
Therefore, the horizontal MOCVD crystal growth furnace according to the second embodiment suppresses the generation of the high-pressure region 201 due to the ammonia gas flowing through the lower layer introduction passage 102a in the gas narrowing section 102d, and the middle layer introduction passage 102b The eddy current generation region 202 due to the gas containing TMG flowing through 102b is prevented from being generated.
[0046]
FIG. 3 shows a semiconductor manufacturing apparatus according to a second embodiment of the present invention, and shows a schematic cross-sectional configuration of a horizontal MOCVD crystal growth furnace. In FIG. 3, the same components as those shown in FIG.
[0047]
As shown in FIG. 3, the horizontal MOCVD crystal growth furnace 100 </ b> B according to the second embodiment includes a second partition 103 at the end of the first partition plate 103 constituting the internal reaction tube 102 on the gas throttle unit 102 d side. A bent portion 103a that is bent substantially in parallel with the inclined portion 104a of the plate 104 is provided. The height of the end of the bent portion 103a on the susceptor 120 side is substantially equal to the end of the second partition plate 104 on the susceptor 120 side.
[0048]
As shown in the enlarged view of the gas throttle unit 102d in FIG. 4, even in the second embodiment, the high-pressure area 201 due to the ammonia gas flowing through the lower layer introduction path 102a is reduced but not completely eliminated, As a result, the swirl generation region 202 due to the gas containing TMG flowing through the middle layer introduction passage 102b is somewhat generated.
[0049]
When a film was formed under the same growth conditions as in the first embodiment, the velocity distribution, temperature distribution, and growth film thickness distribution in the plane of the wafer 110 having a diameter of about 5.1 cm (= 2 inches) were respectively different. It has been confirmed that fluctuations of about 2.0%, 2.0% and 1.8% occur.
[0050]
(Third embodiment)
Hereinafter, a third embodiment of the present invention will be described with reference to the drawings.
[0051]
The third embodiment has a configuration in which a higher-quality semiconductor can be obtained with respect to the horizontal MOCVD crystal growth furnace 100B according to the second embodiment.
[0052]
FIG. 5 shows a semiconductor manufacturing apparatus according to a third embodiment of the present invention, and shows a schematic cross-sectional configuration of a horizontal MOCVD crystal growth furnace. In FIG. 5, the same components as those shown in FIG.
[0053]
As shown in FIG. 5, a horizontal MOCVD crystal growth furnace 100C according to the third embodiment includes a second partition plate 104 at an end of the first partition plate 103 constituting the internal reaction tube 102 on the susceptor 120 side. By making the inclination of the inclined portion 104a smaller than that of the inclined portion 104a, a bent portion 103b is provided so that an end thereof approaches a downstream side of the inclined portion 104a. Also here, the height of the end of the bent portion 103b on the susceptor 120 side is substantially equal to the end of the second partition plate 104 on the susceptor 120 side.
[0054]
With this configuration, in the gas throttle unit 102d, the gap between the inclined portion 104a and the bent portion 103b of the second partition plate 104 is reduced, so that the gas high-pressure region 201 illustrated in FIG. 4 disappears. In addition, in this gap portion, the flow rate of the gas containing TMG becomes large, and conversely, a low-pressure region having a lower pressure than the surroundings is generated, so that the gas constriction portion 102d of the middle introduction passage 102b contains TMG. No swirl occurs in the gas.
[0055]
As a result of measurement under the same conditions as in the second embodiment, the in-plane velocity distribution, temperature distribution, and growth film thickness distribution of the wafer 110 were 1.3%, 1.2%, and 1.1%, respectively. It has been confirmed that the spatial distribution can be realized with almost uniform spatial distribution.
[0056]
In the gas throttle section 102d, the cross-sectional area of the middle-layer introduction passage 102b in the vicinity where the first raw material gas and the second raw-material gas are mixed should be about 20% or less of the cross-sectional area of the lower-layer introduction path 102a. Is preferred.
[0057]
(Fourth embodiment)
Hereinafter, a fourth embodiment of the present invention will be described with reference to the drawings.
[0058]
The fourth embodiment has a configuration in which a higher quality semiconductor can be obtained with respect to the horizontal MOCVD crystal growth furnace 100C according to the third embodiment.
[0059]
FIG. 6 shows a semiconductor manufacturing apparatus according to a fourth embodiment of the present invention, and shows a schematic cross-sectional configuration of a horizontal MOCVD crystal growth furnace. 6, the same components as those shown in FIG. 5 are denoted by the same reference numerals, and description thereof will be omitted.
[0060]
As shown in FIG. 6, the horizontal MOCVD crystal growth furnace 100D according to the fourth embodiment includes a bent portion provided at an end of the first partition plate 103 on the susceptor 120 side, the gap between the inclined portion 104a and the inclined portion 104a being gradually reduced. A parallel portion 103c extending substantially parallel to the main surface of the wafer 110 is provided at the tip of 103b. Here, the height of the parallel portion 103c is substantially equal to the end of the second partition plate 104 on the susceptor 120 side.
[0061]
As described above, the horizontal MOCVD crystal growth furnace 100D according to the fourth embodiment is provided at the tip of the bent portion 103b provided on the first partition plate 103 so as to approach the inclined portion 104a of the second partition plate 104. , A parallel portion 103c extending substantially parallel to the main surface of the wafer 110 is provided. Accordingly, as shown in an enlarged view of the gas throttle portion 102d in FIG. 7, the streamline 200 of the ammonia gas flowing through the lower layer introduction passage 102a does not substantially collide with the inclined portion 104a. The pressure of the gas does not increase, so that no high pressure zone is formed. As a result, no vortex is generated in the gas flow including TMG flowing through the middle layer introduction path 102b to the gas throttle section 102d.
[0062]
Further, since the gap between the inclined portion 104a and the parallel portion 103c is sufficiently small, even if the flow rate of the gas containing TMG flowing through the middle introduction passage 102b is relatively small, the flow rate increases in this gap portion. As a result, the pressure of the gas in the gap becomes lower than that of the upstream side of the middle layer introduction passage 102b, and the source gas flowing through the middle layer introduction passage 102b is more quickly drawn downstream by this pressure reduction effect.
[0063]
As described above, according to the fourth embodiment, it is possible to prevent the raw material gas (TMG) flowing through the middle introduction passage 102b from generating a vortex that causes turbulence in the gas flow in the gas throttle unit 102d. it can.
[0064]
When film formation was performed under the same growth conditions as in the first embodiment, the in-plane velocity distribution, temperature distribution, and growth film thickness distribution of the wafer 110 having a diameter of about 5.1 cm were at most 1. It has been confirmed that only 0%, 1.0% and 0.76% fluctuation occurs, and that each spatial distribution is almost uniform. Almost no deposit of an intermediate product is observed in the gas throttle portion 102d and its vicinity.
[0065]
When a semiconductor film made of gallium nitride grown to a thickness of about 5 μm was measured by X-ray diffraction, the half width of the rocking curve was about 4 min over the entire surface of the grown semiconductor film. .
[0066]
Furthermore, when photoluminescence (PL) measurement was performed, it was confirmed that there was strong band edge emission at room temperature.
[0067]
In the second embodiment as well, the parallel portion 103c may be provided on the bent portion 103a provided at the end of the first partition plate 103 on the susceptor 120 side, similarly to the fourth embodiment.
[0068]
In each of the first to fourth embodiments, a compound semiconductor made of gallium nitride is formed using TMG as an organometallic compound gas and ammonia as a hydrogen compound gas. It is also effective when a gas containing trimethyl aluminum (TMA) or trimethyl indium (TMI) is added to the compound gas to form aluminum gallium nitride (AlGaN) or indium gallium nitride (InGaN).
[0069]
Further, the present invention uses gallium arsenide (GaAs), gallium phosphide (GaP), and aluminum gallium arsenide (AlGaAs) using arsine (AsH ₃ ) or phosphine (PH ₃ ) instead of ammonia as a hydrogen compound gas. ) Or aluminum gallium phosphide (AlGaP).
[0070]
【The invention's effect】
According to the semiconductor manufacturing apparatus and the manufacturing method thereof according to the present invention, the mixed gas obtained by mixing the first source gas and the second source gas is smoothly and parallel to and near the surface of the substrate. Since the semiconductor is supplied, a very high-quality crystallographic semiconductor can be formed on the substrate.
[Brief description of the drawings]
FIG. 1 is a schematic sectional view showing a semiconductor manufacturing apparatus according to a first embodiment of the present invention.
FIG. 2 is a configuration sectional view showing a main part of an internal reaction tube in the semiconductor manufacturing apparatus according to the first embodiment of the present invention.
FIG. 3 is a schematic sectional view showing a semiconductor manufacturing apparatus according to a second embodiment of the present invention.
FIG. 4 is a configuration sectional view showing a main part of an internal reaction tube in a semiconductor manufacturing apparatus according to a second embodiment of the present invention.
FIG. 5 is a schematic sectional view showing a semiconductor manufacturing apparatus according to a third embodiment of the present invention.
FIG. 6 is a schematic configuration sectional view showing a semiconductor manufacturing apparatus according to a fourth embodiment of the present invention.
FIG. 7 is a configuration sectional view showing a main part of an internal reaction tube in a semiconductor manufacturing apparatus according to a fourth embodiment of the present invention.
FIG. 8 is a schematic sectional view showing a conventional horizontal MOCVD crystal growth furnace.
[Explanation of symbols]
100A Horizontal MOCVD crystal growth furnace 100B Horizontal MOCVD crystal growth furnace 100C Horizontal MOCVD crystal growth furnace 100D Horizontal MOCVD crystal growth furnace 101 External reaction tube 101
102 Internal reaction tube 102a Lower layer introduction path (first introduction path)
102b Middle layer introduction path (second introduction path)
102c Upper layer introduction path (third introduction path)
102d Gas throttle unit 103 First partition plate 103a Bent unit 103b Bent unit 103c Parallel unit 104 Second partition plate 104a Inclined unit 110 Wafer (substrate)
120 Susceptor 130 RF coil 200 Streamline 201 High pressure area 202 Vortex generation area

Claims (10)

On a substrate, a first source gas composed of a hydrogen compound and a second source gas composed of an organometallic compound are introduced substantially parallel to the substrate surface in a layered manner, and the sub-flow gas is mixed with the first source gas and the first source gas. A semiconductor manufacturing apparatus for manufacturing a semiconductor on a substrate by introducing a layer substantially in parallel with a substrate surface above a second source gas,
A first introduction path for introducing the first source gas, a second introduction path for flowing the second source gas, and a third introduction path for introducing the sub-flow gas;
The first introduction path and the second introduction path are opened upstream of the substrate to generate a mixed gas in which the first raw material gas and the second raw material gas are mixed, and the upper part thereof is formed. A gas restrictor provided so as to become lower toward the downstream of the mixed gas,
An apparatus for manufacturing a semiconductor device, wherein an introduction path of the mixed gas between the gas throttle unit and the substrate is provided so as to be substantially parallel to a substrate surface. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the third introduction path is formed along an upper surface of the second introduction path. 3. The first introduction path, the second introduction path, and the third introduction path are sequentially provided from the lower side,
3. The semiconductor manufacturing apparatus according to claim 1, wherein a bent portion bent downward is provided at an end of the first introduction path on the gas throttle portion side. 4. 4. The semiconductor manufacturing apparatus according to claim 3, wherein the bent portion is provided so as to approach toward a downstream side of an inclined ceiling portion in the gas throttle portion. 5. The semiconductor manufacturing apparatus according to claim 3, wherein a downstream end of the bent portion is provided so as to have the same height as an upper portion of an introduction path of the mixed gas. 6. The semiconductor manufacturing apparatus according to any one of claims 3 to 5, wherein a parallel portion substantially parallel to a substrate surface is provided at a downstream end of the bent portion. The cross-sectional area of the second introduction passage in the vicinity of the mixing of the first raw material gas and the second raw material gas in the gas throttle portion is 20% or less of the cross-sectional area of the first introduction passage. The semiconductor manufacturing apparatus according to any one of claims 4 to 6, wherein: The said hydrogen compound contains nitrogen, the said organometallic compound contains a III III element, and the said semiconductor is a III-V nitride semiconductor, The semiconductor according to any one of claims 1 to 7, wherein Semiconductor manufacturing equipment. On a substrate, a first source gas composed of a hydrogen compound and a second source gas composed of an organometallic compound are introduced substantially parallel to the substrate surface in a layered manner, and the sub-flow gas is mixed with the first source gas and the first source gas. By introducing the first source gas and the second source gas on the substrate side to form a mixed gas by introducing the first source gas and the second source gas on the upper side of the second source gas substantially in parallel with the substrate surface, A semiconductor manufacturing method for manufacturing a semiconductor on the substrate,
A method of manufacturing a semiconductor, wherein the pressure in the vicinity where the first raw material gas and the second raw material gas are mixed is also small in the upstream part of the second raw material gas. The method of claim 9, wherein the hydrogen compound contains nitrogen, the organometallic compound contains a group III element, and the semiconductor is a group III-V nitride semiconductor.

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