JP4327136B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4327136B2 JP4327136B2 JP2005237067A JP2005237067A JP4327136B2 JP 4327136 B2 JP4327136 B2 JP 4327136B2 JP 2005237067 A JP2005237067 A JP 2005237067A JP 2005237067 A JP2005237067 A JP 2005237067A JP 4327136 B2 JP4327136 B2 JP 4327136B2
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
5;電極、6;絶縁領域部、7;凹部
Claims (2)
- 高周波回路の入力端と接地との間に、前記高周波回路を静電破壊から保護する保護ダイオードを備えた半導体装置において、
前記保護ダイオードは、半導体基板上に積層したp型領域及びn型領域の半導体領域を、あるいはさらに前記p型領域と前記n型領域の間に前記p型領域及び前記n型領域よりキャリア濃度の低い中間層を備えた半導体領域を区画して形成されたpn接合部を備え、
該区画されたpn接合部は、放電経路となる前記p型領域及び前記n型領域からなるpn接合ダイオード部と、前記pn接合部の中央部を絶縁化した絶縁領域部とを備えていることを特徴とする半導体装置。 - 請求項1記載の半導体装置において、前記半導体基板上に、凹部を挟んで、2つの前記pn接合ダイオード部と該pn接合ダイオード部に電気的に接続される電極を備え、前記電極下には前記絶縁領域部が形成され、前記2つのpn接合ダイオード部をアンチシリーズに接続していることを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2005237067A JP4327136B2 (ja) | 2005-08-18 | 2005-08-18 | 半導体装置 |
Applications Claiming Priority (1)
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JP2005237067A JP4327136B2 (ja) | 2005-08-18 | 2005-08-18 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2007053216A JP2007053216A (ja) | 2007-03-01 |
JP4327136B2 true JP4327136B2 (ja) | 2009-09-09 |
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Family Applications (1)
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JP2005237067A Expired - Fee Related JP4327136B2 (ja) | 2005-08-18 | 2005-08-18 | 半導体装置 |
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JP (1) | JP4327136B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107078096B (zh) | 2014-09-22 | 2020-10-02 | 株式会社村田制作所 | 半导体装置 |
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2005
- 2005-08-18 JP JP2005237067A patent/JP4327136B2/ja not_active Expired - Fee Related
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JP2007053216A (ja) | 2007-03-01 |
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