JP4326940B2 - 高電圧スイッチング装置 - Google Patents

高電圧スイッチング装置 Download PDF

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Publication number
JP4326940B2
JP4326940B2 JP2003506100A JP2003506100A JP4326940B2 JP 4326940 B2 JP4326940 B2 JP 4326940B2 JP 2003506100 A JP2003506100 A JP 2003506100A JP 2003506100 A JP2003506100 A JP 2003506100A JP 4326940 B2 JP4326940 B2 JP 4326940B2
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JP
Japan
Prior art keywords
switch
load
capacitance
switching device
parallel
Prior art date
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Expired - Fee Related
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JP2003506100A
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English (en)
Japanese (ja)
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JP2004534452A (ja
JP2004534452A5 (https=
Inventor
スティーブン マーク イスカンダー
ロバート リチャードソン
ポール アンドリュー グーチ
Original Assignee
イー2ヴイ テクノロジーズ (ユーケイ) リミテッド
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Publication of JP2004534452A publication Critical patent/JP2004534452A/ja
Publication of JP2004534452A5 publication Critical patent/JP2004534452A5/ja
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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10Modifications for increasing the maximum permissible switched voltage
    • H03K17/102Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/53Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
    • H03K3/57Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device

Landscapes

  • Generation Of Surge Voltage And Current (AREA)
  • Microwave Tubes (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
JP2003506100A 2001-06-15 2002-06-14 高電圧スイッチング装置 Expired - Fee Related JP4326940B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0114675A GB2378065B (en) 2001-06-15 2001-06-15 High voltage switching apparatus
PCT/GB2002/002732 WO2002103904A2 (en) 2001-06-15 2002-06-14 High voltage switching apparatus

Publications (3)

Publication Number Publication Date
JP2004534452A JP2004534452A (ja) 2004-11-11
JP2004534452A5 JP2004534452A5 (https=) 2006-01-05
JP4326940B2 true JP4326940B2 (ja) 2009-09-09

Family

ID=9916706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003506100A Expired - Fee Related JP4326940B2 (ja) 2001-06-15 2002-06-14 高電圧スイッチング装置

Country Status (6)

Country Link
US (1) US7256637B2 (https=)
EP (1) EP1396082B1 (https=)
JP (1) JP4326940B2 (https=)
AU (1) AU2002345159A1 (https=)
GB (1) GB2378065B (https=)
WO (1) WO2002103904A2 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0503439D0 (en) * 2005-02-18 2005-03-30 E2V Tech Uk Ltd High voltage switching apparatus
WO2006121893A2 (en) * 2005-05-06 2006-11-16 Titon Energy Power factor correction apparatus and method of producing a power factor correction capacitance for a specified load
US9008275B2 (en) 2012-05-01 2015-04-14 Analogic Corporation Voltage switching in an imaging modality that utilizes radiation to image an object
US10978955B2 (en) 2014-02-28 2021-04-13 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US11539352B2 (en) 2013-11-14 2022-12-27 Eagle Harbor Technologies, Inc. Transformer resonant converter
WO2015073921A1 (en) 2013-11-14 2015-05-21 Eagle Harbor Technologies, Inc. This disclosure relates generally to a high voltage nanosecond pulser.
US10892140B2 (en) 2018-07-27 2021-01-12 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10020800B2 (en) 2013-11-14 2018-07-10 Eagle Harbor Technologies, Inc. High voltage nanosecond pulser with variable pulse width and pulse repetition frequency
US10483089B2 (en) 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
US11227745B2 (en) 2018-08-10 2022-01-18 Eagle Harbor Technologies, Inc. Plasma sheath control for RF plasma reactors
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
WO2018148182A1 (en) 2017-02-07 2018-08-16 Eagle Harbor Technologies, Inc. Transformer resonant converter
JP6902167B2 (ja) 2017-08-25 2021-07-14 イーグル ハーバー テクノロジーズ, インク.Eagle Harbor Technologies, Inc. ナノ秒パルスを使用する任意波形の発生
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
US11302518B2 (en) 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
US11810761B2 (en) 2018-07-27 2023-11-07 Eagle Harbor Technologies, Inc. Nanosecond pulser ADC system
US11222767B2 (en) * 2018-07-27 2022-01-11 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
CN109713931B (zh) * 2018-12-06 2020-05-19 西安交通大学 基于真空密闭环境的纳秒上升时间强脉冲电流发生装置
TWI783203B (zh) 2019-01-08 2022-11-11 美商鷹港科技股份有限公司 奈秒脈波產生器電路
TWI778449B (zh) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 高電壓脈衝電路
EP4486072A3 (en) 2019-12-24 2025-04-09 Eagle Harbor Technologies, Inc. Nanosecond pulser rf isolation for plasma systems
US11967484B2 (en) 2020-07-09 2024-04-23 Eagle Harbor Technologies, Inc. Ion current droop compensation
US11824542B1 (en) 2022-06-29 2023-11-21 Eagle Harbor Technologies, Inc. Bipolar high voltage pulser
JP7833099B2 (ja) 2022-09-29 2026-03-18 イーグル ハーバー テクノロジーズ,インク. 高電圧プラズマ制御

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678362A (en) * 1970-09-17 1972-07-18 Us Army Solid state pulser using parallel storage capacitors
WO1981001924A1 (fr) * 1979-12-28 1981-07-09 Int Rectifier Corp Jp Ltd Configuration de circuit de transistor a effet de champ
US4720668A (en) * 1986-06-20 1988-01-19 Lee Fred C Zero-voltage switching quasi-resonant converters
KR0115015Y1 (ko) * 1991-09-19 1998-10-01 이헌조 스위칭소자 구동회로
US5395394A (en) * 1993-06-17 1995-03-07 Hewlett-Packard Corporation Defibrillator with a high voltage solid state relay
US5568035A (en) * 1993-10-15 1996-10-22 Sony/Tektronix Corporation Variable-capacitance power supply apparatus
US5723913A (en) * 1994-12-06 1998-03-03 Performance Controls, Inc. High-voltage electronic switching circuit
JPH0993908A (ja) * 1995-09-22 1997-04-04 Denshi Seigyo Group:Kk 半導体スイッチ駆動回路
US5930125A (en) * 1996-08-28 1999-07-27 Siemens Medical Systems, Inc. Compact solid state klystron power supply
AU7164696A (en) * 1996-09-23 1998-04-14 Eldec Corporation Solid-state high voltage switch and switching power supply
US6327163B1 (en) * 1999-04-27 2001-12-04 Science Research Laboratory, Inc. Solid state pulsed power supply
GB2356752B (en) * 1999-11-29 2004-08-11 Eev Ltd Switching arrangements
JP2001238470A (ja) * 2000-02-21 2001-08-31 Ngk Insulators Ltd パルス電力発生用スイッチ回路
US6552598B2 (en) * 2001-07-20 2003-04-22 Vitaly Gelman Semiconductor high voltage electrical energy transmission switching system and method

Also Published As

Publication number Publication date
WO2002103904A3 (en) 2003-03-13
GB2378065A (en) 2003-01-29
AU2002345159A1 (en) 2003-01-02
EP1396082A2 (en) 2004-03-10
GB0114675D0 (en) 2001-08-08
US20040183506A1 (en) 2004-09-23
WO2002103904A2 (en) 2002-12-27
EP1396082B1 (en) 2019-05-01
JP2004534452A (ja) 2004-11-11
US7256637B2 (en) 2007-08-14
GB2378065B (en) 2004-09-15

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