JP4325371B2 - Exposure apparatus and device manufacturing method - Google Patents

Description

  The present invention relates to an exposure apparatus for manufacturing an electronic device such as a semiconductor element, a liquid crystal display element, an image pickup element (CCD or the like), a thin film magnetic head, and a device manufacturing method for manufacturing a device using the exposure apparatus.

  When an electronic device such as a semiconductor element or a liquid crystal display element is manufactured by a photolithography process, a pattern image of a mask or reticle (hereinafter referred to as a reticle) on which a pattern is formed is exposed to a photosensitive agent (resist) via a projection optical system. A projection exposure apparatus that projects onto each projection (shot) region on a substrate coated with is used.

In recent years, integrated circuits have been integrated at high density, that is, circuit patterns have been miniaturized. Therefore, the exposure irradiation beam (exposure light) in the projection exposure apparatus tends to be shortened. That is, instead of the mercury lamps that have been mainstream so far, a short-wavelength light source such as a KrF excimer laser (wavelength: 248 nm) has come to be used, and an exposure apparatus using a short-wavelength ArF excimer laser (193 nm). Is also entering the final stage. Further, development of an exposure apparatus using an F ₂ laser (157 nm) is underway for further high density integration.

In general, a beam having a wavelength of about 190 nm or less belongs to the vacuum ultraviolet region, is called vacuum ultraviolet light, and has a property of not transmitting in the air. This is because the energy of the beam is absorbed by substances such as oxygen molecules, water molecules, carbon dioxide molecules (hereinafter referred to as light absorbing materials) contained in the air. In order to perform exposure work with an exposure device using vacuum ultraviolet light while ensuring sufficient productivity (throughput), the concentration of the light-absorbing substance contained in the optical path space of the exposure light is suppressed to several ppm or less. Must. As described above, the exposure apparatus using vacuum ultraviolet light can transfer a finer light-shielding pattern, but needs to exclude light-absorbing substances.
Therefore, in an exposure apparatus using vacuum ultraviolet light, it is necessary to perform gas replacement with a high purity inert gas in order to reduce or eliminate light absorbing substances from the space on the optical path of the exposure light. That is, not only the space in the first chamber that houses the illumination optical system that illuminates the reticle and the space in the projection system that houses the projection optical system that projects the reticle pattern onto the substrate, but also the first chamber and the projection system. A space between the projection system and the substrate to be exposed (in other words, a space between the lens barrel and the substrate to be exposed), and a space between the projection system and the substrate to be exposed. The space in the third chamber containing the gas must also be replaced with a high purity inert gas.
Further, it is necessary to configure so that the high purity inert gas does not leak between the first chamber and the second chamber, between the second chamber and the projection system, and between the projection system and the third chamber.
Furthermore, it is necessary to suppress vibration propagation generated between the first chamber and the second chamber, vibration propagation generated between the second chamber and the projection system, and vibration propagation generated between the projection system and the third chamber, respectively. is there.
Thus, a configuration has been proposed in which the first chamber, the second chamber, the projection system, and the third chamber are connected by flexible connecting members (see Patent Document 1).
International Publication No. 00/74120 Pamphlet

  However, the connecting member disclosed in the above-mentioned patent document is composed of a film-like cover in which a stabilization film made of aluminum (Al) is coated on a high barrier film by vapor deposition or the like. By this film-like cover, Intrusion of light-absorbing substances from the outside to the inside is suppressed.

However, aluminum is peeled off due to defective deposition of the stabilization film, operational mistakes when installing the film cover into the device, movement of the bellows when the film cover is formed into a bellows, etc., and pollutants in the internal space There is a problem of generating.
Also, when processing the film-like cover into a cylindrical shape, it is necessary to join the vicinity of the end face of the sheet-like film material, but part of the protective film and the adhesive is exposed to the internal space, and the protective film and the adhesive Degassing significantly reduces the concentration of high purity inert gas. Due to the influence of this degassing, there is a problem that the optical parts (lenses and the like) arranged in the optical path space are clouded.
In view of the above, the present invention provides an exposure apparatus capable of keeping a predetermined space in the exposure apparatus main body, for example, the optical path space of exposure light, clean, and a device manufacturing method using the exposure apparatus. For the purpose.

In order to achieve the above object, the present invention adopts the following configuration corresponding to FIGS. 1 to 6 showing the embodiment.
An exposure apparatus according to the present invention includes an exposure apparatus main body for transferring a pattern of a mask (R) onto a substrate (W), and a separating member (1A) that surrounds a predetermined space in the exposure apparatus main body and isolates the predetermined space from outside air. 1B, 1C, 1D, 18A, 18B), the isolation member (1A, 1B, 1C, 1D, 18A, 18B) is a first thin film (58) made of a stretchable first material. ), A second thin film (55) made of a second material that blocks intrusion of outside air into the predetermined space, and a metal film provided between the first thin film (58) and the second thin film (55) (56) and provided with, from the predetermined space side, the second thin film, the metal film are laminated in this order of the first thin film and said Rukoto.
Further, the exposure apparatus of the present invention is an exposure apparatus comprising: an exposure apparatus main body that transfers a mask pattern to a substrate; and an isolation member that isolates a predetermined space in the exposure apparatus main body from outside air, wherein the isolation member is The isolation member is formed in a hollow shape so as to cover the predetermined space, and the isolation member includes a first thin film formed of a first material having elasticity, and a second that blocks intrusion of the outside air into the predetermined space. A second thin film formed of a material, a metal film provided between the first thin film and the second thin film, and both ends of the metal film provided in the predetermined space in the hollow state. And a first bonding thin film bonded from the side.

  Therefore, according to the present invention, the separation member (1A, 1B, 1C, 1D, 18A, 18B) suppresses the intrusion of outside air into the predetermined space, and the predetermined space accompanying the peeling of the metal film (56). Contamination can be prevented. That is, the predetermined space can be kept clean. Further, since the first thin film (58), the second thin film (55), and the metal film (56) have flexibility, the elements (2B, 3, 6, 8, 21 that constitute the exposure apparatus (10) are provided. ) Can be suppressed.

  A device manufacturing method of the present invention is characterized by using any of the exposure apparatuses described above. Therefore, according to the present invention, since a predetermined space in the exposure apparatus is kept clean and vibration propagation in the exposure apparatus is suppressed, device manufacture can be performed in a favorable apparatus environment.

  According to the present invention, intrusion of a light-absorbing substance into the inside of an exposure apparatus can be suppressed, vibration and force from the inside and outside of the exposure apparatus can be prevented from being transmitted to a specific part of the exposure apparatus, and the exposure apparatus body The predetermined space inside can be kept clean.

Hereinafter, an embodiment of an exposure apparatus according to the present invention will be described with reference to the drawings. In this example, the present invention is applied to a step-and-scan projection exposure apparatus using vacuum ultraviolet light as exposure light.
FIG. 1 is a schematic block diagram showing the projection exposure apparatus of this example. As shown in FIG. 1, the projection exposure apparatus has an exposure light source, an illumination optical system LU, a retic stage system RST, and a projection optical system. It can be roughly divided into PL and wafer stage system WST.

As an exposure light source, an F ₂ laser light source (wavelength 157 nm) is used, but other ArF excimer laser light sources (wavelength 193 nm), Kr ₂ laser light sources (wavelength 146 nm), harmonic generators of YAG lasers, semiconductors A light source that generates vacuum ultraviolet light (in this example, light having a wavelength of 200 nm or less) such as a laser harmonic generator can also be used. However, even when a KrF excimer laser light source (wavelength 248 nm), a mercury lamp (i-line, etc.) or the like is used as the exposure light source, the present invention can be applied when it is particularly desired to increase the transmittance of exposure light.
The main body of the projection exposure apparatus of this example is placed on a base member 2C, and a substantially portal-shaped first frame 2A including four or three legs (columns) is installed on the base member 2C. ing. The illumination optical system LU of this example includes an illuminance uniformizing optical system composed of an optical member such as an optical integrator (a uniformizer or a homogenizer), a relay lens, a variable ND filter, a reticle blind, a dichroic mirror, and the like ( Both are configured to include (not shown). In this illumination optical system LU, a slit-like illumination area defined by a reticle blind on a reticle R on which a circuit pattern or the like is drawn is illuminated with illumination light with a substantially uniform illuminance.

The illumination optical system LU is housed in a box-shaped first sub-chamber 3 having a high airtightness, and the first sub-chamber 3 is formed above the first frame 2A in which an opening for allowing exposure light to pass is formed. Installed.
The reticle stage RST includes a reticle holder 7a, a reticle stage 7b, and a reticle base 7c. The reticle R is held on the reticle stage 7b via the reticle holder 7a, and the reticle stage 7b is magnetically operated on the reticle base 7c. It is driven by a reticle stage driving unit (not shown) composed of a floating type two-dimensional linear actuator. Further, the base member 21 is provided on the support plates (only two places appear in FIG. 1) on the middle (or three places) of the first frame 2A via the vibration isolation members 23A and 23B. It is supported. The vibration isolation members 23A and 23B are active vibration isolation devices that combine an air damper (or a hydraulic damper or the like) and an electromagnetic actuator such as a voice coil motor.
The reticle stage system RST is housed in a highly airtight box-shaped second sub-chamber 8 as a reticle chamber. The bottom plate of the second sub chamber 8 is formed by the base member 21.
In addition, inside the first column 2A on the upper surface of the base member 2C, there are almost four vibration isolation members 24A and 24B (or only two in FIG. 1 appear). A gate-shaped second frame 2B is installed, and the projection optical system PL is held at the center of the intermediate support plate of the second frame 2B. The vibration isolation members 24A and 24B are active vibration isolation devices similar to the vibration isolation members 23A and 23B. A laser interferometer 11 (reticle interferometer) is installed on the upper surface of the second frame 2B, and a reticle stage 7b (reticle) is formed by the laser interferometer 11 and a reflecting mirror (not shown) installed on the reticle stage 7b. R) in the X and Y directions and, if necessary, rotation angles around the X, Y, and Z axes are measured. Based on these measured values, the reticle stage 7b is controlled by a stage control system (not shown). The position and moving speed of the are controlled.

  Projection optical system PL is arranged below reticle stage system RST in FIG. 1, and the direction of optical axis AX is the Z-axis direction. The projection optical system PL is, for example, a double-sided telecentric reduction system, and includes a plurality of lens elements (not shown) having a common optical axis AX in the Z-axis direction. Further, as the projection optical system PL, one having a projection magnification β of, for example, 1/4, 1/5, 1/6, or the like is used. Therefore, as described above, when the illumination area on the reticle R is illuminated by the exposure light, an image obtained by reducing the pattern formed on the reticle R by the projection optical system PL at the projection magnification β is registered on the surface. It is projected and transferred to a slit-like exposure area on the wafer W coated with (photosensitive agent). The projection optical system PL is composed of a refractive optical system or a catadioptric optical system. The projection optical system PL is placed on the second frame 2B via a flange portion formed on the outer periphery. Note that a seal member for ensuring airtightness is provided between the flange portion of the projection optical system PL and the second frame 2B.

Wafer stage system WST is disposed on wafer base base 22 below projection optical system PL in FIG. 1, and wafer holder 5a is fixed on wafer stage 5b. A wafer W is fixed on the wafer holder 5a by, for example, vacuum suction. The wafer holder 5a can be tilted in an arbitrary direction with respect to the optical axis orthogonal plane of the projection optical system PL by a drive unit (not shown) and can be finely moved in the optical axis direction (Z direction) of the projection optical system PL. Yes. Further, the wafer holder 5a can also be rotated minutely around the optical axis AX. The wafer stage 5b is driven on the wafer base 22 by a wafer stage driving unit (not shown) composed of a magnetic levitation type two-dimensional linear actuator. Further, the wafer base 22 is placed on the base member 2C via the vibration isolating members 25A and 25B (only two locations appear in FIG. 1) at four locations (or three locations, etc.). The members 25A and 25B are active vibration isolation devices similar to the vibration isolation members 23A and 23B. Wafer stage system WST is housed in a highly airtight box-shaped third sub-chamber 6 as a wafer chamber. The bottom plate of the third chamber 6 is formed by the wafer base 22.
Further, a laser interferometer 9 (wafer interferometer) is installed on an intermediate support plate of the second frame 2B, and the X and Y directions of the wafer holder 5a are reflected by the laser interferometer 9 and the reflecting mirror on the side surface of the wafer holder 5a. The position and rotation angles around the X, Y, and Z axes are measured, and the operation of the wafer stage 5b is controlled by a stage control system (not shown) based on these measured values.
In addition, for example, a multi-point optical autofocus sensor (AF sensor) 10 in an oblique incidence method is fixed to an intermediate support plate of the second frame 2B, and the wafer W measured by the autofocus sensor 10 is measured. Based on the information of the focus position at a plurality of measurement points, the focus position of the wafer W and the tilt angles around the X axis and the Y axis are controlled. Thereby, during exposure, the surface of the wafer W is focused on the image plane of the projection optical system PL. Further, an off-axis imaging wafer alignment system 14 for aligning the wafer W is also fixed to the second frame 2B.
Further, in the side surface direction of the first frame 2A, there are a reticle loader system RLD that transfers the reticle R to and from the reticle stage system RST, and a wafer loader system WLD that transfers the wafer W to and from the wafer stage system WST. A stored interface column 17 is installed. In order to minimize the opening of the reticle stage system RST and wafer stage system WST to the outside, the gate valve 15 is provided at the transfer port for transferring the reticle in the interface column 17 and the transfer port for transferring the wafer. , 16 are provided. At the time of scanning exposure, when the exposure to one shot area on the wafer W is finished, the next shot area is moved to the scanning start position by the step movement of the wafer stage 5b, and then the reticle stage 7b and the wafer stage 5b are projected optically. Step-and-scan is an operation in which the projection magnification β of the system PL is used as a speed ratio and is synchronously scanned in the Y direction, that is, scanning is performed while maintaining the imaging relationship between the reticle R and the shot area on the wafer W. Repeated in the scheme. As a result, the pattern image of the reticle R is sequentially transferred to each shot area on the wafer W.

When vacuum ultraviolet light is used as exposure light as in this example, vacuum ultraviolet light is oxygen (O ₂ ), water (water vapor: H ₂ O), carbon monoxide (CO), It is largely absorbed by carbon gas (carbon dioxide: CO ₂ ), organic substances, halides, and the like (hereinafter these gases are collectively referred to as “light-absorbing substances”). Therefore, in order to prevent the exposure light from being attenuated by the light absorbing material, it is necessary to suppress the concentration of the light absorbing material contained in the optical path space of the exposure light to about 10 to 100 ppm or less. Therefore, in this example, in the optical path space of the exposure light, a gas that is highly transparent and chemically stable with respect to the exposure light, that is, nitrogen (N ₂ ) gas, or helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), or radon (Rn) or other rare gas or the like (hereinafter, these gases are collectively referred to as “permeable gas”) with high density, Is in a highly removed state.
Nitrogen gas can be used as a gas (transmitting gas) that allows exposure light to pass through even in the vacuum ultraviolet region up to a wavelength of about 150 nm, but acts almost as a light-absorbing substance for light with a wavelength of about 150 nm or less. To come. Therefore, it is desirable to use a rare gas as a permeable gas for exposure light having a wavelength of about 150 nm or less. Among rare gases, helium gas is desirable from the viewpoints of refractive index stability and high thermal conductivity, but helium is expensive. May be used.
In this example, helium gas is used as the permeable gas, focusing on the stability of the refractive index (stability of imaging characteristics) and high thermal conductivity (high cooling effect). Therefore, for example, in the machine room below the floor where the projection exposure apparatus of the present example is installed, helium gas is supplied to the projection exposure apparatus and a plurality of hermetic chambers in the apparatus attached thereto. An air supply / exhaust mechanism 13 for collecting and reusing the helium gas flowing through the closed chamber is installed.

The air supply / exhaust mechanism 13 includes a recovery unit that recovers helium gas, an accumulation unit that accumulates helium gas, an air supply unit that adjusts the temperature of the helium gas and supplies the helium gas to the outside, and the like. Through the sub-chambers 3, 8, 6 and the projection optical system PL at a pressure (positive pressure) slightly higher than the atmospheric pressure, respectively. The helium gas containing the impurities flowing through the gas is collected in the collecting unit via the exhaust pipe 27 provided with the valve V. The discharged helium gas may be exhausted from the air supply / exhaust mechanism 13 through the factory piping without being collected.
Note that different types of permeable gases may be supplied to each of the sub-chambers 3, 6, 8 and the projection optical system PL.

Next, the isolation member (film structure) of this embodiment will be described.
In the film structure 1A, the optical path space of the exposure light between the lower part of the first sub-chamber 3 and the upper part of the second sub-chamber 8 is isolated from the outside air. The film structure 1C is provided between the upper surface of the frame 2B, the film structure 1C is provided between the upper end portion of the projection optical system PL and the upper surface of the second frame 2B, and the film structure 1D is intermediate the second frame 2B. Between the bottom surface of the support plate and the top surface of the third sub-chamber 6. In the present embodiment, the first sub-chamber 3, the second sub-chamber 8, the base member 21, the second frame 2b, and the third sub-chamber 6 correspond to the elements of the present invention.
Next, the structure of the film structure and the method for attaching the film structure will be described in detail with reference to FIGS. Below, the structure of 1 A of film structures is demonstrated typically, Since other film structures are the structures similar to 1 A of film structures, description is abbreviate | omitted.
First, the configuration of the sheet-like film 50 will be described with reference to FIG.
2 shows a partial cross-sectional view of the sheet-like film 50 in the state of being wound in the cylindrical shape shown in FIG. As shown in FIG. 2, the film 50 is configured by laminating an elastic film (first thin film) 58, an adhesive layer 57, a metal film 56, and an isolation film (second thin film) 55 in this order.
The isolation film 55 is extremely excellent in gas barrier properties (gas barrier properties) and has a very low degassing (second material), such as ethylene vinyl alcohol resin (EVOH resin). It is formed. As this EVOH resin, for example, “trade name: EVAL” manufactured by Kuraray Co., Ltd. can be used. As other materials, Kapton (manufactured by DuPont), Mylar (manufactured by DuPont), Miktron (manufactured by Toray), Vecta (manufactured by Kuraray), Lumirror (manufactured by Toray) and the like can be used.
The metal film 56 is a thin film that is vacuum-deposited on the isolation film 55, and the vaporized metal atoms are continuously attached to the surface of the isolation film 55 by vacuum evaporation, so that a fine uneven portion on the surface of the isolation film 55 is formed. Or metal atoms get into minute holes. Therefore, the metal film 56 is bonded to the surface of the isolation film 55 in a very dense state, and the gas barrier property of the isolation film 55 is supplemented by the deposition of the metal film 56. The material of the metal film 56 is preferably a material that is less degassed, and is preferably a material that does not easily transmit gas such as a light-absorbing material. For example, an inorganic material such as aluminum is employed. The material may be a compound but is preferably a chemically stable material.
The adhesive 57 adheres the metal film 56 and a stretchable film 58 to be described later. The adhesive 57 does not chemically change the metal film 56 or the stretchable film 58 and has a low degassing, for example, a fluorine-based material. It is preferable to employ one made of a material.
The stretchable film 58 is formed of a material having excellent stretchability (first material) made of polyethylene (— (CH ₂ CH ₂ ) _n —), and is adhered to the surface of the metal film 56 by lamination processing (multilayer processing). It is joined via the agent 57. In addition, as a material of the stretchable film 58, polyurethane, polypropylene, halogen-based polymer, or the like may be employed.
When the film 50 configured by laminating a plurality of thin films as described above surrounds a predetermined space, an isolation film (second thin film) 55, a metal film 56, an adhesive 57, The film 50 is bent, bent, or bent into a cylindrical shape so that the stretchable film (first thin film) 58 is laminated in this order.

Next, an example in which the film 50 is configured in a cylindrical shape will be described.
As shown in FIG. 3, after the sheet-like film 50 is wound in a cylindrical shape, the inner side surface and the outer side surface of both end portions will be described later in a state where the end surfaces of both end portions of the film 50 are in contact with each other. Bond each with a bonding film. By bonding the bonding films, the film 50 is formed in a hollow cylindrical shape having openings B and C.
FIG. 4 is an enlarged cross-sectional view of the joint A in FIG. As shown in FIG. 4, in the joining portion A of the film 50, the sheet-like film 50 is wound in a cylindrical shape and the both end faces 50 a of the film 50 are in contact with each other, and the joining film (first A bonding thin film 55a is thermally welded, and a bonding film (second bonding thin film) 58a is heat-welded to the outer surface thereof.
The bonding film 58a is used for bonding both end portions of the sheet-like film when the sheet-like film is processed into a cylindrical shape, and the bonding film 55a is bonded to both end portions of the sheet-like film, Particles due to peeling of the metal film 56 exposed at the end of the film 50 and light-absorbing substances (degassing) generated from at least a part of the adhesive 57 and the stretchable film 58 are prevented from entering the predetermined space.
The bonding film 55a is formed of the same material as the isolation film 55, that is, a material having excellent gas barrier properties (gas barrier properties) and extremely low outgassing (second material), and the bonding film 58a is stretchable. It is formed of the same material as the film 58, that is, a material having excellent stretchability (first material).

Thus, according to the film 50 configured in the shape of a hollow cylinder, the metal film 56 is provided on the outside of the isolation film 55 when viewed from the inside of the hollow cylinder, and the metal film 56 is interposed via the isolation film 55 and the adhesive 57. Since it is held by the stretchable film 58, the metal film 56 can be prevented from peeling off.
Further, when the both end portions 50a of the film 50 are joined, the bonding film 55a is thermally welded to the inner side surface of the film 50, and the bonding film 58a is thermally welded to the outer side surface of the film 50. Intrusion of outside air (light-absorbing substance) from the gap between the end faces can be reduced. Further, by providing the bonding films 55a and 58a in this way, a part of the metal film 56 exposed on the end face of the film 50 becomes particles, and enters a predetermined space surrounded by the hollow cylindrical film 50. Intrusion of light-absorbing substances (degassing) generated from the adhesive 57 and the stretchable film 58 can be reduced. Furthermore, when this hollow cylindrical film 50 surrounds a predetermined space to which helium gas is supplied, the amount of helium gas leaked from the predetermined space to the outside is reduced.
In addition, although the case where the joining film 58a was comprised with the same material as the elastic film 58 was demonstrated, you may comprise as shown in FIG. That is, the bonding film 58 a may be configured by laminating the stretchable film 59, the adhesive 60, the metal film 61, and the isolation film 62 and fixing the stretchable film 59 to the stretchable film 58. At this time, the stretchable film 59, the adhesive 60, the metal film 61, and the isolation film 62 may be made of the same material as that of the film 50.
The attachment of the bonding film 58a to the stretchable film 58 of the film 50 is not limited to heat welding, and may be attached by an adhesive, ultrasonic bonding, or the like.
Furthermore, if the amount of the light-absorbing substance (degassing) generated from the peeling of the metal film 56 exposed on the end face of the film 50 and the adhesive 57 or the stretchable film 58 exposed on the end face of the film 50 is negligible, The bonding film 55a may not be provided.

Next, the structure of 1 A of film structures using the film 50 processed into the hollow cylinder shape as FIG.3 and FIG.4 is demonstrated.
FIG. 6 is an external perspective view of the film structure 1A.
As shown in FIG. 6, the film structure 1A includes a hollow cylindrical film 50, holding members 51a and 51b, and a hose clamp (fastening member) 52 for fastening the film 50 to the holding members 51a and 51b. The holding members 51 a and 51 b have a fastening portion (flange portion) F and a fitting portion E. The fastening part F is a part fastened to an attachment target to which the film structure 1 </ b> A is attached, and the fitting part E is inserted into the openings B and C of the hollow cylindrical film 50, and It is a part to be fitted. Here, the fitting portion E has a main body portion H formed slightly larger than the diameters of the openings B and C of the hollow cylindrical film 50, and the diameter gradually increases from the main body portion H toward the tip. The taper part I becomes smaller. That is, the tip diameter of the taper part I is formed smaller than the diameters of the openings B and C.
Next, the fastening method (film attachment method) between the film 50 and the holding members 51a and 51b will be described.
First, the taper portion I of the fitting portion E of the holding members 51 a and 51 b is inserted into the openings B and C of the hollow cylindrical film 50, and then the main body portion H of the fitting portion E is fitted with the film 50. Insert until Then, the film 50 is fitted to the main body part H of the fitting part E. Next, the hose clamp 52 is arranged on the outer surface of the film 50 fitted to the main body part E, and the film 50 is pressed and fixed to the holding members 51 a and 51 b by tightening the hose clamp 52.
According to such a fastening method, since no gap is formed between the fitting portion E and the film 50, it is possible to prevent the light absorbing material from entering the space surrounded by the film 50 from the outside. .
Moreover, as long as the airtightness between the fitting part E and the film 50 can be ensured, not only a hose clamp but fastening members, such as a spring, may be used.
In addition, by tightening the hose clamp 52 in a state where a sealing material (for example, an O-ring or the like) made of a material with a small degassing amount (for example, a fluorine-based resin) is disposed between the film 50 and the fitting portion E, Furthermore, the airtightness between the fitting part E and the film 50 is improved. Further, a sealing material such as an O-ring may be disposed between the film 50 and the hose clamp 52.

As described above, the film structure 1A configured as described above is provided between the lower portion of the first sub-chamber 3 and the upper portion of the second sub-chamber 8. Specifically, the first sub-chamber 3 is provided. The holding member 51a is fixed to the lower end of the second sub-chamber 8, and is attached to the upper end of the second sub chamber 8 via the holding member 51b. The holding members 51 a and 51 b are screwed to an installation surface provided on the lower surface of the first sub chamber 3 and an installation surface provided on the upper surface of the second sub chamber 8. At this time, in order to improve airtightness, an O-ring made of a material (for example, fluorine-based resin) with less degassing may be disposed between the holding members 51a and 51b and the installation surface.
The material of the holding members 51a and 51b is preferably a metal such as aluminum or a material that does not generate degassing such as ceramics, and the outer and inner surfaces of the holding members 51a and 51b are reduced in order to reduce the amount of outgassing. Surface treatment (for example, metal spraying, electrolytic polishing, etc.) may be performed.

According to the film structure 1A configured as described above, the film 50 fitted to the holding members 51a and 51b and fixed by the hose clamp has a large flexibility. That is, since the film 50 has extremely small rigidity with respect to the holding members 51a and 51b, it is possible to prevent vibration propagation between the first and second sub-chambers 3 and 8. Further, the film 50 constituting the film structure 1A has a configuration in which a metal film for improving the gas barrier property of the isolation film 55 is laminated outside the isolation film 55 excellent in gas barrier property in a predetermined space. Therefore, peeling of the metal film from the predetermined space can be suppressed, and the space surrounded by the film structure 1A can be kept clean. Further, since the bonding film 55a is attached to the bonding portion of the film 50, the metal peeling from the metal film exposed on the end face of the film and the degassing generated from the adhesive 57 or the stretchable film 58 are within the predetermined space. Intrusion can be suppressed.
The other film structures 1B to 1D are formed in the same manner as the film structure 1A, and have the same effects.
That is, the influence of the vibration and the offset load generated from the reticle stage system RST of FIG. 1 is absorbed by the film structure 1B and hardly transmitted to the second frame 2B holding the projection optical system PL. In addition, the influence of vibration and offset load generated from the wafer stage system WST is absorbed by the film structure 1D and hardly transmitted to the second frame 2B holding the projection optical system PL. Therefore, it is possible to suppress the deterioration of the imaging characteristics of the projection optical system PL due to vibrations and bias loads generated from the wafer stage system WST, the reticle stage system RST, etc., and highly accurate exposure can be performed.
As described above, the film structures 1 </ b> A to 1 </ b> D can keep the optical path space of the exposure light clean, and can reduce fogging of optical components (lenses, mirrors, etc.) arranged in the optical path space.
Therefore, the atmosphere in the optical path space of the exposure light can be replaced with a high purity permeable gas, and the transmittance for the exposure light is kept high. That is, the illuminance of the exposure light incident on the wafer W is increased, the exposure time for each shot area of the wafer W can be shortened, and the throughput is improved. In this example, since the optical path of the measurement beam of the optical measurement device such as the laser interferometers 9 and 11 and the autofocus sensor 10 is installed in the atmosphere of the permeable gas, the light of the measurement beam of these optical measurement device. Generation of measurement errors due to gas fluctuations on the road can be suppressed.

When the illumination optical system LU or the projection optical system PL is further divided into a plurality of sub-chambers, the sub-chambers may be connected by the film structure of the present embodiment.
Although the film structure in the present embodiment has been described with respect to the configuration for isolating the optical path space of the exposure light from the outside air as the predetermined space, it is not limited to this configuration.
For example, it is configured in the same manner as the film structure 1A described in this embodiment between the reticle stage system RST (second sub-chamber 8) and wafer stage system WST (third sub-chamber 6) and the interface column 17. Film structures 18A and 18B may be installed. That is, vibrations generated from the reticle loader system RLD and the wafer loader system WLD in the interface column 17 by installing the film structures 18A and 18B with respect to the gate valves 15 and 16 in the interface column 17, or the gate It is possible to prevent vibration generated when the valves 15 and 16 are opened and closed from being transmitted to the projection exposure apparatus main body, that is, the reticle stage system RST and the wafer stage system WST.
For example, when the reticle loader system RLD or the wafer loader system WLD is stored separately in a plurality of sub-chambers, the sub-chambers may be connected by a film structure.
Further, a mirror that houses an optical system (for example, a wafer alignment system 14, an autofocus sensor 10, laser interferometers 9 and 11, etc.) partially disposed outside the second sub chamber 8 or the third sub chamber 6. You may provide a film structure in the connection part of a pipe | tube (housing | casing) and its subchamber. In addition, a film structure may be provided at a connection portion between each of the sub-chambers, the projection optical system PL, and the like and a pipe for supplying and exhausting permeable gas.

Further, in the present embodiment, the configuration in which the sealing member secures airtightness between the flange portion of the projection optical system PL and the second frame 2B has been described. However, the flange portion of the projection optical system PL and the second frame 2B You may connect between by a film structure.
Moreover, although the film structure mentioned above was formed with the sheet-like film 50, you may form it by bending repeatedly in bellows shape (bellows structure). Thus, by making it a bellows shape, durability and flexibility of the film structure accompanying the deformation | transformation and vibration between several elements improve.
In addition, the material of the film used for the film structure is not limited to the above-mentioned ethylene / vinyl / alcohol resin, and it is suitable for gas such as polyamide, polyimide, or polyester. Any material having good barrier properties and flexibility may be used. In this case, ethylene vinyl alcohol resin is most desirable in terms of the best gas barrier property, polyester is most desirable in terms of cost and cost, and polyamide or polyimide is desirable from the viewpoint of cost performance.
Furthermore, the number of installed film structures and the installation locations are not limited to the configuration of the present example, but in addition to the exposure light optical path space or a portion (such as a reticle loader RLD installation section) communicating with the optical path space. The film structure may be installed in a predetermined space that needs to be isolated from the film.
For example, when a wafer stage system or a reticle stage system is driven so as to satisfy the momentum conservation law using a counter balance, the film structure is installed in a space between the counter balance and the movable stage of the stage system. It may be.
In the above-described embodiment, the present invention is applied to a step-and-scan type projection exposure apparatus. However, the present invention is a step-and-stitch type exposure apparatus, stepper, etc. It is obvious that the present invention can be applied to the collective exposure type projection exposure apparatus, the mirror projection system, and the proximity system exposure apparatus that does not use the projection optical system PL.

  When the projection optical system PL is used, the optical system may be any of a refraction system, a reflection system, or a catadioptric system, and may be any one of a reduction system, an equal magnification system, and an enlargement system. There may be. Furthermore, in order to manufacture not only an exposure apparatus used for manufacturing a microdevice such as a semiconductor element, a liquid crystal display element, a plasma display (display device), a thin film magnetic head, and an imaging device (CCD), but also a reticle or a mask. The present invention can also be applied to an exposure apparatus that transfers a circuit pattern onto a glass substrate or a silicon wafer. Here, in an exposure apparatus using DUV (far ultraviolet) light, VUV (vacuum ultraviolet) light, or the like, a transmission type reticle is generally used. As a reticle substrate, quartz glass, fluorine-doped quartz glass, fluorite, Magnesium fluoride or quartz is used. In addition, a reflective mask is used in an exposure apparatus that uses EUV light (extreme ultraviolet light) as an exposure energy beam, and a transmission type mask (stencil mask, membrane mask) is used in a proximity X-ray exposure apparatus or electron beam exposure apparatus. And a silicon wafer or the like is used as the mask substrate.

As the exposure light, for example, a single wavelength laser in the infrared region or visible region oscillated from a DFB semiconductor laser or fiber laser is doped with, for example, erbium (Er) (or both erbium and ytterbium (Yb)). The present invention is also applied to the case of using a harmonic wave amplified by a fiber amplifier and converted into ultraviolet light using a nonlinear optical crystal. Specifically, when the oscillation wavelength of the single wavelength laser is in the range of 1.51 to 1.59 μm, the generated harmonic is in the range of 189 to 199 nm, or the generated harmonic is 151 to 159 nm. A 10th harmonic that falls within the range is output. In particular, when the oscillation wavelength is in the range of 1.544 to 1.553 μm, an 8th harmonic wave in the range of 193 to 194 nm, that is, ultraviolet light having substantially the same wavelength as that of the ArF excimer laser is obtained. If it is within the range of 57 to 1.58 μm, 10th harmonic within the range of 157 to 158 nm, that is, ultraviolet light having substantially the same wavelength as the F ₂ laser can be obtained.

  As described above, the projection exposure apparatus of this example uses various sub-systems including each component (illumination optical system LU, retic stage system RST, projection optical system PL, wafer stage system WST) with predetermined mechanical accuracy, electric power. Manufactured by assembling so as to maintain optical accuracy and optical accuracy. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 6, the semiconductor device has a step 301 for designing the function / performance of the device, a step 302 for producing a mask (reticle) based on this design step, and a step 303 for producing a substrate which is a base material of the device. The substrate is manufactured through the substrate processing step 304 for exposing the mask pattern onto the substrate by the exposure apparatus EX of the above-described embodiment, the device assembly step (including the dicing process, bonding process, and package process) 305, the inspection step 306, and the like.

It is a schematic block diagram of the exposure apparatus of this invention. It is the cross-sectional enlarged view which expanded the film of this invention in the thickness direction. It is a perspective view of the film of this invention. It is the cross-sectional enlarged view which expanded the junction part A of the film of this invention in the thickness direction. It is a cross-sectional enlarged view which shows the other example of the junction part A of the film of this invention. It is a perspective view which shows the film structure of this invention. It is a flowchart figure which shows an example of the manufacturing process of a semiconductor device.

Explanation of symbols

1A, 1B, 1C, 1D Isolation member (film structure)
2B Second frame (element)
3 First sub-chamber (element)
6 Third sub-chamber (element)
8 Second subchamber (element)
18A, 18B Isolation member (film structure)
21 Base member (element)
50 Film 51a, 51b Holding member (flange)
55 Isolation film (second thin film)
52 Hose clamp (fastening member)
55a Bonding film (first bonding thin film)
56 Metal film 57 Adhesive 58 Stretch film (first thin film)
58a Bonding film (second bonding thin film)
B, C Opening E Fixed part (part of flange)
I Insertion (part of flange)
R reticle (mask)
PL projection optical system (element)

Claims (9)

In an exposure apparatus comprising: an exposure apparatus main body that transfers a mask pattern to a substrate; and an isolation member that surrounds a predetermined space in the exposure apparatus main body and isolates the predetermined space from outside air.
The isolation member includes a first thin film formed of a first material having elasticity, a second thin film formed of a second material that blocks intrusion of the outside air into the predetermined space, and the first thin film. and a metal film provided between the thin film and the second thin film, from the predetermined space side, the second thin film, the metal film, characterized Rukoto are laminated in this order of the first film An exposure apparatus. The metal film is deposited on the second thin film;
The exposure apparatus according to claim 1 , wherein the metal film and the first thin film are attached to each other by an adhesive. The exposure apparatus according to claim 1 , wherein the predetermined space is at least a part of an optical path space of exposure light for transferring the pattern of the mask to the substrate. . The isolation member is disposed between a plurality of elements, isolates a predetermined space between the plurality of elements from outside air, and suppresses vibration transmission between the plurality of elements. 4. The exposure apparatus according to any one of 3 . In an exposure apparatus comprising: an exposure apparatus body that transfers a mask pattern to a substrate; and an isolation member that isolates a predetermined space in the exposure apparatus body from outside air.
The isolation member is formed in a hollow shape so as to cover the predetermined space,
The isolation member includes a first thin film formed of a first material having elasticity, a second thin film formed of a second material that blocks intrusion of the outside air into the predetermined space, and the first thin film. A metal film provided between the thin film and the second thin film, and a first bonding thin film that joins both ends of the metal film from the predetermined space side in the hollow state. A featured exposure apparatus. The exposure apparatus according to claim 5 , wherein the isolation member further includes a second bonding thin film for bonding both end portions thereof from the outside air side. The first bonding thin film is composed of the second material,
The exposure apparatus according to claim 6 , wherein the second bonding thin film is made of the first material. A flange portion that fits into an opening formed by making the separating member hollow.
The exposure apparatus according to claim 5 , further comprising a fastening member that fixes the film to the flange portion. Using an exposure apparatus according to any one of claims 1 to 8, a device manufacturing method for manufacturing a device.

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