JP4323813B2 - Substrate manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention provides a circuit When antenna And having substrate Manufacturing method About.
[0002]
[Prior art]
Card-type, tag-type, or coin-type wireless tags equipped with ICs have abundant information volume and high security performance, and are therefore widely used in the transportation, distribution, and information communication fields. Among them, the non-contact type wireless tag that performs power supply and signal transmission / reception by a wireless method without providing an external terminal on the base is a data destruction due to static electricity entering from the connection terminal, a data error due to a contact failure, and It has recently attracted attention because it does not cause problems such as inability to send and receive.
[0003]
Practical examples of contactless wireless tags using these wireless systems include, for example, a SUIKA card that can pass through a ticket gate of a station by simply holding it over, a car key that can prevent forgery of keys, and the like. Further, as the structure, for example, as shown in FIG. 9, a circuit module including an IC chip 51 and a wireless communication antenna coil 52 connected to a pad portion of the IC chip 51 is used as an exterior material such as a vinyl chloride resin. A structure fixed by thermal fusion of 53 has been proposed.
[0004]
In general, a wireless tag includes a wound coil, a conductive paste on an insulating substrate, and a pattern formed by a metal film or the like. In order to realize a smaller wireless tag, a wireless tag in which an antenna coil is formed on an IC chip has been proposed as described in, for example, Japanese Patent Application Laid-Open No. 2001-257292. A feature of these wireless tags is that information written in the wireless tag is read or written from a reader by wireless communication. When the wireless tag is mounted on a thin device such as an IC card, the bending strength is required to be strong. This is because the bending force may be applied at the time of storage when the user carries it like an IC card, and it is necessary to make it thin and flexible so that it will not break even if bent. That's why.
[0005]
As a semiconductor chip for thinning the semiconductor layer, a technique using a bonded substrate is disclosed in Japanese Patent Laid-Open No. 2002-231909. This technology is a thin layer in terms of heat dissipation and mechanical flexibility in LSI chips mounted on thin devices due to miniaturization and high integration of semiconductor devices and dramatic increase in chip heat generation density. It is effective because it is required to be integrated.
[Patent Document 1]
JP 2001-257292 A
[Patent Document 2]
Japanese Patent Laid-Open No. 2002-231909
[Patent Document 3]
Japanese Patent Laid-Open No. 2002-083894
[Problems to be solved by the invention]
However, since the wireless tag described in Japanese Patent Laid-Open No. 2001-257292 is formed on a Si substrate, it is difficult to reduce the thickness of the semiconductor layer. The process of creating an antenna coil used for a wireless tag is an electrodeposition process in which a substrate is exposed to an acidic solution by processing on a relatively large scale of several μm or more, and a wireless communication circuit is formed. The process is a semiconductor process that is processed to a relatively small scale of submicron or less, and vacuum techniques such as sputtering and dry etching are mainly used. Therefore, when these different processes are mixed and used on the same substrate, there is a problem that the process becomes complicated. In particular, as disclosed in Japanese Patent Application Laid-Open No. 2002-083894, when an antenna coil is formed on a substrate on which a semiconductor circuit is formed, the lower semiconductor circuit can be damaged during the electrodeposition process. There is sex.
[0006]
The method disclosed in Japanese Patent Laid-Open No. 2002-231909 can reduce the thickness of the semiconductor circuit portion of the IC chip, but the antenna coil and the wireless communication circuit used in the wireless tag are the same as described above. There is a problem in forming on a substrate.
[0007]
The present invention has been made in view of the above problems, for example, a circuit. When antenna And having The purpose is to produce a thin substrate.
[0008]
[Means for Solving the Problems]
One aspect of the present invention is: Circuit and Spiral antenna coil A step of preparing a member in which a semiconductor layer on which a circuit is formed is disposed on a separation layer; Spiral antenna coil A step of preparing the antenna substrate on which the substrate is formed, a step of bonding the semiconductor layer side of the member to the antenna substrate via a coupling layer, and a substrate manufactured in the bonding step are separated by the separation layer As a bonding layer Epoxy, urethane or acrylic as a base resin, and conductive metal fine particles are blended in the base resin By using a conductive adhesive, the circuit and the Spiral antenna coil When At both ends of the spiral antenna coil Electrically connected Be done It is characterized by that.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings.
[0018]
[First embodiment]
Hereinafter, the substrate according to the first embodiment of the present invention will be described. FIG. 1 is a cross-sectional view of a device 10 as a substrate according to a preferred first embodiment of the present invention. The device 10 includes a semiconductor layer 10a on which a circuit 3 is formed, and an antenna substrate 10b on which an antenna 1 is formed that is coupled to the semiconductor layer 10a to transmit and receive radio waves. The semiconductor layer 10a includes a portion separated by a separation layer. The semiconductor layer 10a and the antenna substrate 10b are preferably bonded by the bonding layer 2, but the present invention is not limited to this. For example, instead of using the coupling layer 2, the semiconductor layer 10a and the antenna substrate 10b may be brought into contact with each other and then bonded together by performing heat treatment or the like. The device 10 according to a preferred embodiment of the present invention can be applied to various apparatuses that perform at least one of transmission and reception of radio waves. Hereinafter, in the present invention, a case where the present invention is applied to an apparatus that performs wireless communication will be described as an example.
[0019]
In FIG. 1, an antenna 1 is formed on an antenna substrate 10b and used to perform at least one of transmission and reception of radio waves. The antenna 1 can be made of any material used as a member that performs at least one of transmission and reception of radio waves. For example, it is desirable to use a metal material such as copper. Moreover, although the thickness of the antenna 1 is not specifically limited, 5 micrometers is mentioned as an example.
[0020]
The bonding layer 2 can use any adhesive that bonds the semiconductor layer 10a and the antenna substrate 10b. For example, the bonding layer 2 uses a conductive adhesive (for example, metal conductive fine particles on a base resin) in order to communicate with the circuit 3 formed in the semiconductor layer 10a using radio waves transmitted and received by the antenna 1. It is desirable to use a blended one). Here, as the base resin, there are epoxy, urethane, acrylic, and the like, but it is desirable to use epoxy. As the conductive particles, it is desirable to use gold, silver, nickel, carbon or the like. Specifically, an adhesive in which microcapsule (MC) filler in which the surface of silver (Ag) particles is coated with an insulating resin is uniformly dispersed is preferable, and has advantages such as low cost and environmental friendliness. Further, the thickness of the antenna 1 is not particularly limited, but 15 μm is an example.
[0021]
The circuit 3 includes a circuit that can be formed in the semiconductor layer 10a, such as an electronic circuit, an oscillation circuit, an optical waveguide, and various sensors. The circuit 3 includes elements such as a MOS transistor, a bipolar transistor, a diode, a coil, a capacitor, and a light receiving / emitting element. In addition, when the circuit 3 is applied to a device that performs wireless communication, it is preferable that a wireless circuit unit, an ID authentication circuit, and the like are formed.
[0022]
For example, when a semiconductor integrated circuit is formed, the semiconductor layer 10a is preferably separated from the semiconductor substrate. As the semiconductor substrate, for example, a single semiconductor such as silicon or a compound semiconductor such as gallium arsenide can be used. The semiconductor layer is formed by separating a substrate including a separation layer with the separation layer. Therefore, the semiconductor layer has a remarkable feature that its film thickness is extremely thin. Specifically, the thickness of the semiconductor layer 10a is not particularly limited, but is preferably 50 μm or less, and more preferably 20 μm.
[0023]
The antenna substrate 10b includes the antenna 1 therein, and is preferably a dielectric substrate when used for wireless communication, for example.
[0024]
In the device 10, the semiconductor layer 10 a and the antenna substrate 10 b may be bonded together, or may be bonded with a bonding layer 2 as illustrated in FIG. 1. In addition, the device 10 according to the present embodiment is characterized in that the film thickness of the semiconductor layer is extremely thin, and as a result, the entire film thickness is very thin. For example, the total film thickness of the device 10 is not particularly limited, but is preferably 100 μm or less, and more preferably 50 μm or less (for example, 25 μm). As a manufacturing method of the device 10, it is preferable to use a device layer transfer (DLT) process.
[0025]
FIG. 2 is a plan view of the device 10 of FIG. 1 as viewed from above. For example, when the antenna 1 is used as an antenna for wireless communication, it is desirable to form it as a spiral antenna coil as shown in FIG. The number of turns of the antenna coil is not particularly limited in the present embodiment, and can be determined in accordance with an operation or the like by introducing inductance into the circuit 3, forming a magnetic flux, or changing the magnetic flux. For example, when the circuit 3 is used as a high frequency circuit, the number of turns can be reduced to a fraction. The antenna 1 is preferably connected to the semiconductor layer 10a via the pads 101 and 102. The pads 101 and 102 are preferably made of a conductive material in order to obtain good electrical contact between the antenna 1 and the semiconductor layer 10a.
[0026]
[Production method of substrate]
Hereinafter, a method for manufacturing the bonded substrate according to the first embodiment of the present invention will be described. FIG. 7 is a diagram for explaining a method of manufacturing the device 10 according to the preferred embodiment of the present invention. FIGS. 7A to 7F show a process of forming the circuit 3 including the wireless circuit or the like as the first substrate 10a. FIGS. 7A to 7C show a process for forming the antenna 1 on the second substrate 10b. 7 (g) and 7 (h) show a process of bonding the first substrate 701 in FIG. 7 (f) and the second substrate 702 in FIG. 7 (3). In addition, the method for manufacturing the device 10 according to this embodiment is characterized by using a device layer transfer (DLT) technique.
[0027]
In the step shown in FIG. 7A, a Si seed substrate 100 having a semiconductor region is prepared. For example, single crystal silicon can be used as the Si seed substrate.
[0028]
In the step shown in FIG. 7B, the first porous Si layer 11 is formed on the Si seed substrate 100 by the first anodic oxidation treatment. Further, in the step shown in FIG. A second porous Si layer 12 is formed on the Si seed substrate 100 by oxidation treatment. When forming a porous Si layer on the Si seed substrate 100 by anodization, the porous Si layer may be composed of a single layer or a plurality of layers having different porosities as described above. May be. When the porous Si layer is composed of a plurality of layers having different porosities, for example, a high porosity layer, a low porosity layer, etc. are formed in this order from the semiconductor region side of the Si seed substrate 100. For example, a first low-porosity layer, a high-porosity layer, a second low-porosity layer, and the like are formed in this order from the semiconductor region side of the Si seed substrate 100. It may be. Moreover, you may comprise in multiple layers more than 3 layer structure. Although the porosity of a highly porous layer is not specifically limited, For example, it is preferable that it is the range of 10%-90%. Although the porosity of a low-porosity layer is not specifically limited, For example, it is preferable that it is the range of 0%-70%. Moreover, the formation order of said low-porosity layer and high-porosity layer is only what was shown as an example, and can form in arbitrary orders. The method of forming a plurality of layers having different porosities is carried out, for example, by changing the current density in anodization, the type or concentration of the conversion solution, and the like.
[0029]
When the porous layer is formed by anodization, a nitride film is formed on the inner wall of the porous hole before the step of growing the semiconductor film on the porous layer (step shown in FIG. 7D). It is desirable to perform a protective film forming step for forming a protective film such as an oxide film, a heat treatment step in an atmosphere containing hydrogen, or the like. Further, it is desirable to perform a heat treatment step after the protective film forming step.
[0030]
In the step shown in FIG. 7D, the semiconductor layer 13 is formed on the second porous Si layer 12 by hydrogen annealing, high temperature CVD, or the like. As the semiconductor layer 13 having the structure shown in FIG. 7D, for example, a non-porous single crystal silicon thin film, a compound semiconductor film such as GaAs, InP, or GaN can be used. When the semiconductor layer 13 is single crystal silicon, the source gas is SiH. ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiH ₄ Alternatively, HCl gas or the like may be added. The method for forming the semiconductor layer 13 is not limited to the CVD method, and for example, an MBE method, a sputtering method, or the like may be used.
[0031]
Note that it is desirable to perform the second heat treatment at a temperature higher than the temperature of the first heat treatment after the porous layer is subjected to the first heat treatment in an atmosphere containing hydrogen and before the semiconductor layer 13 is grown. . Although the temperature of 1st heat processing is not specifically limited, For example, it is desirable that it is the range of 800 to 1000 degreeC. The temperature of the second heat treatment is not particularly limited, but is preferably in the range of 900 ° C. to the melting point of the porous layer, for example. Thereby, the holes on the surface of the porous layer can be sufficiently sealed. Specifically, for example, the temperature of the first heat treatment can be set to 950 ° C., and the temperature of the second heat treatment can be set to 1100 ° C.
[0032]
In the step shown in FIG. 7E, an epitaxial Si layer 14 is formed on the semiconductor layer 13 by epitaxial growth of Si. For example, when the epitaxial Si layer 14 is grown by the CVD method, it is desirable that the growth is performed at a low growth rate of 20 nm / min or less up to a predetermined thickness (for example, 10 nm).
[0033]
In the step shown in FIG. 7F, a semiconductor element and / or a semiconductor integrated circuit 3 having a circuit such as a high frequency circuit and an ID circuit is formed in the epitaxial Si layer 14. As the semiconductor element and / or the semiconductor integrated circuit 3, for example, an element such as a CMOS, a bipolar transistor, a diode, a coil, or a capacitor, or a semiconductor integrated circuit such as a DRAM, a microprocessor, a logic IC, or a memory can be manufactured. . Applications of these elements and circuits include electronic circuits, oscillation circuits, light receiving / emitting elements, optical waveguides, various sensors, and the like.
[0034]
Hereinafter, a method for creating the structure shown in FIG. 7F will be described in detail. As a method for creating the structure shown in FIG. 7F, for example, a method using a porous layer by anodization, or a method using an ion-implanted layer in which a rare gas such as hydrogen, nitrogen, or helium is ion-implanted is used. Etc.
[0035]
In the case of anodizing, the Si seed substrate 100 is anodized to form the porous layers 11 and 12 functioning as separation layers on the surface. Next, after forming the semiconductor film 13 on the porous layers 11 and 12 by a CVD method or the like, a normal semiconductor manufacturing process is applied to the semiconductor film 13 to manufacture the semiconductor element and / or the semiconductor integrated circuit 3. . In this way, the substrate 701 shown in FIG. 7F is obtained.
[0036]
In the case of ion implantation, a semiconductor element and / or a semiconductor integrated circuit 3 is produced on the surface of the silicon substrate 100 (or epitaxial wafer). Next, after forming a protective film on the semiconductor element and / or the semiconductor integrated circuit 3 as necessary, hydrogen ions are implanted to a desired depth, and ion implantation layers functioning as the separation layers 11 and 12 are formed. Form. In this way, the structure shown in FIG. 7F is obtained. Alternatively, after forming the ion implantation layer at a predetermined depth from the surface of the silicon substrate 100, a device may be formed in a region on the surface side of the silicon substrate 100. In addition, when the ion implantation amount is large, a peeling phenomenon may occur in the device formation process. Therefore, it is desirable to reduce the ion implantation amount (after that, it is desirable to perform an annealing treatment if necessary) to form the device. Desirable to avoid delamination during process
[Method of manufacturing antenna substrate]
Next, a method for manufacturing the antenna substrate will be described. 7 (1) to 7 (3) are diagrams showing a process for manufacturing an antenna substrate.
[0037]
In the step shown in FIG. 7A, a dielectric substrate 60 is prepared as an antenna substrate. The reason why the dielectric substrate 60 is used is to efficiently perform communication using an antenna. For example, when a metal substrate is used, loss increases and it is difficult to receive radio waves with an antenna.
[0038]
In the step shown in FIG. 7B, a resist is applied to the dielectric substrate 60, a predetermined pattern is baked by an exposure process, and then an etching process is performed. Reference numeral 61 denotes a portion deleted by the etching process.
[0039]
In the step shown in FIG. 7 (3), the antenna pattern 1 is created by embedding metal such as copper in the portion 61 deleted in the step shown in FIG. 7 (2). Examples of a method of embedding a metal such as copper include a plating method.
[0040]
In addition, another method can be employed as a process for creating the antenna substrate. 8 (1) to 8 (6) are diagrams showing another process for creating an antenna substrate.
[0041]
In the step shown in FIG. 8A, a dielectric substrate 60 is prepared as an antenna substrate.
[0042]
In the step shown in FIG. 8B, the metal layer 62 is formed substantially uniformly on the dielectric substrate 60 using copper, copper alloy, aluminum, aluminum alloy or the like.
[0043]
In the step shown in FIG. 8 (3), a photoresist layer 61 ′ is formed substantially uniformly on the metal layer 62, and a predetermined pattern including an antenna coil is formed on the formed photoresist layer 61 ′. Covering the mask, the photoresist layer 61 ′ is exposed by irradiating light of a predetermined wavelength from the outside of the mask. Next, the exposed photoresist layer 61 ′ is developed to remove the exposed portion of the photoresist layer 61 ′ and expose the portion of the metal layer 62 corresponding to the exposed pattern.
[0044]
In the step shown in FIG. 8 (4), electroplating or precision electroforming is performed on the exposed portion of the metal layer 62, and the metal plating layer 1 is laminated on the exposed portion of the metal layer 62.
[0045]
In the step shown in FIG. 8 (5), the photoresist layer 61 ′ is removed by ashing or the like to form a patterned metal plating layer (antenna coil) 1 on the substantially uniform metal layer 62.
[0046]
In the step shown in FIG. 8 (6), the exposed portion of the metal layer 62 exposed from the antenna coil 1 as an antenna is selectively etched, and the metal layer 62 exposed from the antenna coil 1 is removed. As a result, the patterned antenna coil 1 is formed on the dielectric substrate 60.
[0047]
In the present embodiment, the electroplating method or the precision electroforming method is used as the means for forming the antenna coil 1, but the present invention is not limited to this. For example, the antenna coil 1 is formed using an electroless plating method. You can also. In this case, since no electrode is required when the antenna coil 1 is formed, the exposure of the photoresist layer 61 ′ does not require the formation of the electrode portion connected to the metal layer 62 and the formation of the lead portion. .
[0048]
Electroless plating, also called chemical plating, involves immersing a base metal in a metal salt solution of the plating metal and depositing metal ions on the surface of the base. The adhesion is strong and uniform with relatively simple equipment. There is a feature that a plating layer having a sufficient thickness can be obtained. The metal salt serves as a supply source of metal ions to be plated. When copper is plated, a solution of copper sulfate, cupric chloride, copper nitrate or the like is used as a plating solution. Metal ions such as copper are deposited only on the metal layer 62 serving as a base, and are not deposited on the photoresist layer 61 ′ which is an insulating surface protective layer. The base material needs to have a small ionization tendency with respect to the plating metal ions and have a catalytic action for the precipitation of the plating metal ions. Therefore, when copper is plated on the metal layer 62 made of aluminum, nickel is formed to a thickness of several μm or less on the surface of the aluminum layer, and immersed in a zinc nitrate solution for several seconds before being replaced with zinc. It is preferable to perform the treatment.
[0049]
On the other hand, the electroplating method and the precision electroforming method are formed on the dielectric substrate 60 by immersing the dielectric substrate 60 on which the metal layer 62 is formed and the electrode made of the plating metal in a plating bath containing plating metal ions. In this method, the applied metal layer 62 is used as a cathode, an electrode immersed in the plating bath is used as an anode, and a voltage is applied to deposit metal ions in the plating bath on the surface of the metal layer 62. In the electroplating method and the precision electroforming method, when copper is plated, a solution of copper sulfate, cupric chloride, copper nitrate or the like is used as a plating solution.
[0050]
In addition, although not shown, an insulating film as a protective film is preferably formed on the antenna coil 1 and its side surface to protect the antenna coil 1. For example, a semi-cured epoxy resin system having a thickness of 20 μm can be used as the insulating film, and for example, a semi-cured epoxy resin system insulating adhesive film can be attached. The insulating film may be another insulating resin such as polyimide, a metal oxide, or the like.
[0051]
[Method of manufacturing bonded substrate]
Next, a method for manufacturing the device 10 by bonding the substrate 701 obtained in the step of FIG. 7F and the antenna substrate 702 obtained in the step of FIG.
[0052]
In the step shown in FIG. 7G, the substrate 701 obtained in the step of FIG. 7F and the antenna substrate 702 on which the antenna coil 1 is formed are bonded by the adhesive layer 2.
[0053]
In the step shown in FIG. 7 (h), separation is performed with a separation layer composed of the first porous Si layer 11 and the second porous Si layer 12. Specifically, pressure is applied by fluid to the side surface of the separation layer composed of the first porous Si layer 11 and the second porous Si layer 12. As a method of applying a pressure by a fluid, for example, a method of spraying a liquid or gas fluid as a high-pressure jet on the side surface of the separation layer or applying a static pressure to the separation layer can be employed. Moreover, as the adhesive layer 2, an epoxy-based adhesive or other adhesives can be used. As the fluid, for example, water, an etchant, alcohol, or the like can be used if it is a liquid, and for example, air, nitrogen gas, argon gas, or the like can be used if it is a gas. The device 10 as shown in FIG. 1 is obtained as described above.
[0054]
In addition, as a method of separating with a separation layer composed of the first porous Si layer 11 and the second porous Si layer 12, a method of applying ultrasonic vibration can be employed. When the porous layer or the ion implantation layer which is the separation layer is not exposed on the side surface of the member, the porous layer may be exposed by performing a process such as etching. Moreover, the porous layer 12 after separation may be selectively removed by etching or the like.
[0055]
Further, in order to separate under static pressure (under a pressure due to a substantially stationary fluid), for example, the following pressure application mechanism can be employed. That is, a sealed empty member that surrounds at least a part of the periphery of the member to form a sealed space, and a pressure application mechanism that can apply a higher pressure in the sealed space than in the external space. . In particular, when the separation layer is formed by ion implantation of hydrogen, nitrogen, He, a rare gas, or the like, a microbubble layer (microbubble layer, formed by ion implantation is performed by performing heat treatment at about 400 ° C. to 600 ° C. Since the microcavity layer is agglomerated, the microcavity layer can be separated by utilizing the phenomenon of being separated by applying pressure by a fluid. CO ₂ You may heat with a laser etc.
[0056]
As a method for forming chips from the separation layer side, a commonly used dicing apparatus can be used. For example, etching, laser ablation, ultrasonic cutter, high-pressure jet (for example, water jet) or the like can be used. Further, when chipping is performed by etching, for example, HF and H ₂ O ₂ Liquid mixture of HF and HNO ₃ An etching solution such as a mixed solution or an alkaline solution can be used. In addition, as a method of forming a chip with a laser, for example, a YAG laser, CO ₂ A laser, an excimer laser, or the like can be used.
[0057]
Further, the device 10 may be manufactured as a single or a plurality of wireless tags by forming a chip for each semiconductor element and / or semiconductor integrated circuit 3. After the device 10 is made into a chip, it can be connected to other circuits or packaged, for example. The device 10 can also be transferred onto a plastic card.
[0058]
Further, it is desirable to perform treatment so that a trench or LOCOS (local oxidation) used for element isolation reaches the porous layer. Further, LOCOS or mesa etching may be performed between chips to be chipped so that no semiconductor film exists between the chips.
[0059]
As described above, according to the present embodiment, by using the semiconductor layer formed by separating the substrate including the separation layer by the separation layer, as a result, the entire substrate can be made very thin. In addition, a substrate (eg, a wireless tag) on which an antenna is formed can be thinned.
[0060]
Therefore, it is possible to solve the problem that it is difficult to reduce the thickness of the semiconductor layer, and it is possible to effectively manufacture a substrate on which a circuit and an antenna are formed.
[0061]
Further, by manufacturing the circuit and the antenna by separate processes, the problem that the process becomes complicated and the problem that the lower circuit is damaged during the process can be solved.
[0062]
[Second Embodiment]
FIG. 3 is a diagram illustrating an example of an application that makes use of the characteristics of the device 10. FIG. 3 shows the device 10 according to the present embodiment attached to a thin plate 20 such as paper. In order to attach the device 10 to a thin object such as the thin plate 20 or the like, it is necessary to reduce the total film thickness. Therefore, since the device 10 according to the present embodiment has a feature that it can be manufactured very thinly, it is preferable to use the device 10 by being attached to a thin plate 20 such as paper.
[0063]
[Third embodiment]
FIG. 4 is a diagram illustrating another example of an application that makes use of the characteristics of the device 10. FIG. 4 shows the device 10 according to this embodiment attached to a seal 50 having an adhesive portion on one side, for example. The seal 50 has an advantage that the user can immediately put it on a desired place. Since the device 10 according to the present embodiment can be manufactured very thinly, it is suitable for being attached to such a seal 5 for use.
[0064]
[Fourth Embodiment]
FIG. 5 is a cross-sectional view when two devices 10 according to the present invention are stacked and mounted on a laminated plastic 30. FIG. 6 is a cross-sectional view of the device 10 according to the present invention arranged in the lateral direction and mounted on a laminated plastic 30 in addition to FIG. 5 and 6, a plurality of devices 10 are provided in one plastic 30. Thus, for example, when the device 10 is used for wireless communication, the user can have different frequencies by incorporating different information into each device 10 or by allowing each device 10 to support different frequencies. There are advantages such as being usable.
[0065]
5 and 6, the two-layer devices 10 are stacked and arranged, but the present invention is not limited to this. For example, the device 10 may be configured by stacking a plurality of layers. However, for example, when three or more layers are stacked, for example, the antenna of the device 10 near the center is sandwiched between other coupling substrates, making communication difficult. Therefore, it is desirable that the device 10 be stacked in about two layers.
[0066]
According to the coupling substrate as the wireless tag and the manufacturing method thereof according to the first to fourth embodiments, a thinned coupling substrate (wireless tag) can be formed, and the flexible and high bending strength IC tag. An IC card can be manufactured. In addition, as the semiconductor device is miniaturized and highly integrated, the chip heat generation density increases dramatically. However, if the coupling substrate according to the first to fourth embodiments is applied to an LSI chip mounted on a thin device, An LSI chip with excellent heat dissipation can be realized.
[0067]
【The invention's effect】
As described above, according to the present invention, a thin substrate on which a circuit and an antenna are formed can be manufactured.
[Brief description of the drawings]
FIG. 1 is a diagram showing an example of a cross-sectional structure of a substrate according to a preferred embodiment of the present invention.
FIG. 2 is a diagram showing an example of a plan view of a substrate according to a preferred embodiment of the present invention.
FIG. 3 is a diagram showing an example of an application that makes use of the characteristics of a substrate according to a preferred embodiment of the present invention.
FIG. 4 is a diagram showing an example of an application that makes use of the characteristics of a substrate according to a preferred embodiment of the present invention.
FIG. 5 is a cross-sectional view when a substrate according to a preferred embodiment of the present invention is mounted on a laminated plastic.
FIG. 6 is a cross-sectional view when a substrate according to a preferred embodiment of the present invention is mounted on a laminated plastic.
FIG. 7 is a diagram showing an example of a substrate process according to a preferred embodiment of the present invention.
FIG. 8 is a diagram showing an example of a substrate process according to a preferred embodiment of the present invention.
FIG. 9 is a diagram illustrating an example of a cross-sectional structure of a conventional wireless tag.
[Explanation of symbols]
1 Antenna coil
2 Adhesive layer
3 High frequency and ID circuit
100 Si seed substrate
11 First porous Si layer
12 Second porous Si layer
13 Si layer
20 paper
50 Seal substrate for wireless tags
60 Dielectric substrate
702 Substrate on which antenna coil is formed

Claims (3)

A method of manufacturing a substrate having a circuit and a spiral antenna coil,
Preparing a member in which a semiconductor layer in which a circuit is formed is disposed on a separation layer;
Preparing an antenna substrate on which a spiral antenna coil is formed;
Bonding the semiconductor layer side of the member to the antenna substrate via a coupling layer;
Separating the substrate produced in the bonding step with the separation layer,
As the bonding layer, an epoxy, urethane, or acrylic base resin is used, and a conductive adhesive in which metal conductive fine particles are blended in the base resin is used, whereby the circuit and the spiral antenna coil are formed. A method for manufacturing a substrate, wherein the spiral antenna coil is electrically connected at both ends.   The manufacturing method according to claim 1, further comprising a step of chipping the substrate manufactured in the separating step. The manufacturing method according to claim 2 , further comprising a step of attaching the chip manufactured in the chip forming step to a thin plate.

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