JP4323058B2 - Wafer notch polishing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a research masou location of the wafer notch, in particular a single thin rubber wheel containing abrasive (RBW = Rubber Bonded Wheel) by performing polishing while appropriately moving the grinding of the previous step It is possible to remove scratches such as streaks formed on the chamfered surface of the notch of the wafer, and the upper and lower chamfered surfaces of the notch, the end surface, and the chamfered surfaces between the end surface and the upper and lower chamfered surfaces, respectively. corners, very uniform and to be able to be polished to a mirror surface of a small continuous world-class surface roughness, Ken friction breakthrough wafer notch that allows to increase significantly the quality of the wafer on the equipment.
[0002]
[Prior art]
On the silicon wafer, as a mark indicating the direction of the crystal axis of silicon, an OF (orientation flat) cut on a straight line or a notch cut into a V-groove shape is formed. The notch is mainly formed in a silicon wafer having a diameter of 200 mmφ or more, and is chamfered and polished to be finished to a mirror surface in the same manner as the outer peripheral edge of the wafer.
[0003]
The notch grinding is performed by a metal bond wheel having a small diameter so that, for example, the upper chamfered surface, the end surface, and the lower chamfered surface are respectively formed. As described above, the chamfered surface 1b on the upper side of the notch 1a of the wafer 1 may have a defective portion, for example, a streak 1c. If a large amount of the wafer 1 is produced, the size and position of the streak 1c may be produced. Changed over time, and it was very difficult to deal with.
[0004]
In order to finish the notch into a mirror surface, it is necessary to completely remove this streak in the polishing process. As disclosed in Japanese Patent Laid-Open No. 2000-52210, when a rubber wheel containing an abrasive is used for polishing, a good polishing can be performed without using any slurry. It has been considered to use a soft rubber wheel to polish the chamfered and end faces of the notch.
[0005]
However, this makes it difficult for the rubber wheel to reach the deepest part of the notch, and the soft rubber wheel reduces the polishing force due to the low contact pressure at the time of polishing, and it takes a lot of time to polish until there are no streaks. There was a problem of requiring.
[0006]
On the other hand, the angle of the V groove formed by the end face of the notch when the wafer is viewed in plan is about 90 °, whereas the angle formed by the chamfered surface of the notch after chamfering is widened to about 146 °. Therefore, the shape of the outer peripheral surface has to be slightly changed between the rubber wheel for polishing the end face and the rubber wheel for polishing the chamfered surface, and at least two rubber wheels are required.
[0007]
In addition, the conventional polishing method involves polishing first in the order of the upper chamfered surface, then the lower chamfered surface, and finally the end surface. The surface roughness of the end surface after polishing is compared to the chamfered surface after polishing. Therefore, there has been a need for a measure for reducing the surface roughness of the end face and making the surface roughness uniform.
[0008]
[Problems to be solved by the invention]
The present invention has been made in order to eliminate the above-described drawbacks of the prior art, and the object of the present invention is to rotate in a direction perpendicular to the surface of the wafer and enter the deepest part of the notch of the wafer with a margin. The chamfered surface and the end surface are continuously polished by moving a rubber wheel formed as thin as possible and containing an abrasive, from the chamfered surface of the notch to the end surface while traversing in the surface direction of the wafer. By polishing the end face as it is, the rubber wheel is allowed to escape in the direction of the end face so that the end face that tends to become rough can be polished at least twice and polished to a mirror surface having a very small surface roughness that is continuous with the chamfered face. It is.
[0009]
Another object of the present invention is to provide a rubber wheel that is formed thin enough to rotate in a direction perpendicular to the wafer surface and can enter the deepest part of the notch of the wafer with sufficient margin and contains an abrasive. By traversing with a constant amplitude or gradually increasing amplitude and polishing the chamfered surface of the notch while maintaining the contact state with the notch, it is possible to quickly remove the streak formed by the previous grinding. is there.
[0010]
In addition to the above method, a further object is formed on the chamfered surface by polishing the corner between the upper chamfered surface and the end surface and the corner between the lower chamfered surface and the end surface, respectively. In addition, the upper and lower corners formed by the chamfered surface and the end surface can be removed by polishing.
[0011]
Another object is to perform upper and lower chamfered surfaces by combining polishing of the chamfered surface of the notch of the wafer with the rubber wheel and polishing performed continuously from the chamfered surface to the end surface by the rubber wheel. In addition, the upper and lower chamfered surfaces and end surfaces of the upper and lower chamfered surfaces and end surfaces can be rounded, and the upper and lower chamfered surfaces and end surfaces can be rounded by one rubber wheel. Is to be able to polish to a continuous mirror surface.
[0012]
Still another object is to polish the upper and lower chamfered surfaces of the notch of the wafer by the above-described rubber wheel, the end surfaces, the corners between the upper and lower chamfered surfaces and the end surfaces, and the rubber wheel. By combining polishing continuously from the chamfered surface to the end surface, the upper and lower chamfered surfaces and the end surface can be connected to the top and bottom surfaces with a single rubber wheel. It is to be able to polish to a level mirror surface (surface roughness 200 angstrom).
[0013]
Another object is to rotate a rubber wheel formed thinner than the width of the notch of the wafer and containing an abrasive in a direction perpendicular to the surface of the wafer, and the spindle is fixed and presses the rubber wheel to the notch. A floating portion provided with a polishing force adjusting mechanism for adjusting the pressing force of the urging elastic body, a table portion for supporting the floating portion via a linear guide, and the table portion being fixed in the rotation axis direction of the rubber wheel. It is equipped with a drive mechanism that makes the rubber wheel follow the shape of the notch by the floating part while reciprocating at the same time as traversing with amplitude or gradually increasing amplitude, and moving the rubber part and the notch close to the table part. Alternatively, the rubber wheel is configured to be slightly slidable in the direction of separation, and the rubber wheel is driven by a drive mechanism with a constant amplitude or a gradual increase in the rotation axis direction of the rubber wheel. While traversing by width, the upper chamfered surface, the lower chamfered surface, the end surface, the corner between the upper chamfered surface and the end surface, and the corner between the lower chamfered surface and the end surface, respectively. It is constructed so that it can be polished, and the rubber wheel is similarly traversed and moved from the upper chamfered surface or the lower chamfered surface along the end surface to continuously polish from the chamfered surface to the end surface. Thus, it is possible to obtain a notch of a wafer having a very small surface roughness while eliminating the use of sludge that is very difficult to handle.
[0014]
[Means for Solving the Problems]
[0019]
In short, the present invention relates to a spindle part that is formed thinner than a notch width of a wafer and rotates a rubber wheel containing an abrasive in a direction perpendicular to the surface of the wafer, and the spindle part is fixed to the notch. A floating portion provided with a polishing force adjusting mechanism for adjusting a pressing force of an elastic body that presses and urges the elastic member, a table portion that supports the floating portion via a linear guide, and the table portion that is a rotating shaft of the rubber wheel. A driving mechanism for causing the rubber wheel to reciprocate in a straight line while following the shape of the notch by the floating portion while being traversed in a direction with a constant amplitude or gradually increasing amplitude, and with respect to the table portion, the floating portion Is configured to be slightly slidable in a direction in which the rubber wheel and the notch approach or separate from each other, and the rubber wheel is driven. A chamfered surface on the upper side of the notch, a lower chamfered surface, an end surface, a corner between the upper chamfered surface and the end surface, while traversing with a constant amplitude or gradually increasing amplitude in the rotation axis direction of the rubber wheel by the structure The corner portions between the lower chamfered surface and the end surface are each configured to be polished, and the rubber wheel is similarly traversed along the end surface from the upper chamfered surface or the lower chamfered surface. It is configured to move and continuously polish from the chamfered surface to the end surface.
[0020]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described based on embodiments shown in the drawings. Polishing apparatus 2 of the wafer notch according to the present invention, in FIG. 3, a spindle unit 3, and the floating portion 4, and a table portion 5, and a driving mechanism 6.
[0021]
As shown in FIGS. 2 to 4, the spindle portion 3 is formed to be thinner than the width of the notch 1a so that it can enter the deepest portion 1d of the notch 1a of the wafer 1 with a margin, and an abrasive (not shown) ) Including a block 11 and a block so that the rubber wheel 8 protrudes downwardly. The rubber wheel 8 is inserted into the floating plate 10 of the floating portion 4. 12. The spindle portion 3 is a vertical spindle, and the rotation direction is converted to a horizontal axis rotation at the tip portion 3a. A rubber wheel 8 is attached to the tip portion 3a, and the wafer is centered on the shaft 8a. 1 has a structure that can be rotated in a direction perpendicular to the surface 1e.
[0022]
The floating portion 4 is provided with a polishing force adjusting mechanism 9 to which the spindle portion 3 is fixed and an elastic body (not shown) that presses and biases the rubber wheel 8 against the notch 1a of the wafer 1 is adjusted. The spindle unit 3 and the polishing force adjusting mechanism 9 are attached to a floating plate 10 having a U-shaped cross section disposed horizontally.
[0023]
The floating portion 4 is attached to the table portion 5 via a linear guide 18 and is slightly slidable in a direction in which the rubber wheel 8 and the notch 1a approach or separate from the table portion 5 during polishing. It is configured as follows.
[0024]
The polishing force adjusting mechanism 9 is for adjusting the polishing force of an elastic body (not shown) according to the material of the wafer 1. The polishing force adjusting mechanism 9 houses the elastic body in a block 14 fixed to the upper surface 10 a of the floating plate 10. The adjusting screw 15 that adjusts the spring force of the elastic body and the vertical table 20 of the table portion 5 abuts when the floating portion 4 is retracted, and is pushed into the block 14 to compress and shrink the elastic body to generate an abrasive force. The pin 16 is arranged coaxially with the elastic body, and the polishing force can be changed by previously deforming the elastic body with the adjusting screw 15.
[0025]
The table portion 5 is a portion that serves as a base for supporting the floating portion 4 via the linear guide 18, and a horizontal table 19 having a convex cross-sectional shape is disposed so as to protrude upward and horizontally. It is fixed to a vertical table 20 arranged at a right angle, and is configured to be movable up and down. The horizontal table 19 is provided with a long hole (not shown) through which the spindle unit 3 passes, so that the spindle unit 3 does not interfere with the horizontal table 19 when the floating unit 4 floats. For example, four guide blocks 21 are fixed to the vertical table 20, and the guide blocks 21 slide on guide rails 23 attached to a base plate 22.
[0026]
The drive mechanism 6 traverses the table portion 5 in the direction of the rotation axis of the rubber wheel 8 with a constant amplitude or gradually increasing amplitude, and at the same time, causes the rubber wheel 8 to reciprocate linearly while following the shape of the notch 1a by the floating portion 4 during polishing . Therefore, the vertical table 20 can be reciprocated linearly in the direction of the rotation axis of the rubber wheel 8, that is, in the direction of the arrow A or B, by a ball screw 24 and a servo motor (not shown).
[0027]
By reciprocating the vertical table 20 in the direction of arrow A or B, the rubber wheel 8 also reciprocates along with it. Therefore, during polishing, the rubber wheel 8 can be polished while traversing using the mechanism. Yes.
[0028]
Further, as shown in FIG. 3, the driving mechanism 6 can reciprocate the rubber wheel 8 in the vertical direction relative to the wafer 1, that is, in the direction of the arrow C or D. The wafer 1 can be moved in the direction approaching or separating from the rubber wheel 8 by a mechanism (not shown), that is, in the direction of arrow E or F.
[0034]
The present invention is configured as described above, and the operation thereof will be described below. First, in FIG. 4, the rubber wheel 8 rotates in the direction of arrow G or H depending on the rotation direction of the spindle unit 3, and can be traversed in the direction of arrow A or B by the drive mechanism 6. And move in the direction of arrow E or F so as to approach or leave.
[0035]
When the notch 1a of the wafer 4 is polished, the rubber wheel 8 is always traversed in order to prevent a specific location from being intensively polished and dug. Its amplitude, in the case of increasing amplitude, such as amplitude diagram L ₁ shown in FIG. 5, and a case of constant amplitude such as amplitude diagram L ₂ shown in FIG.
[0036]
In the case of gradually increasing amplitude, the rotating rubber wheel 8 is brought into contact with the deepest portion 1d of the notch 1a and the amplitude of the traverse is gradually increased. For example, 2 to 4 reciprocal polishing is performed. While the wheel 8 is in contact with the deepest part 1d of the notch 1a and the traverse amplitude is kept constant, for example, 2 to 4 reciprocal polishing is performed.
[0037]
5 and 6, the amplitude diagrams L ₁ and L ₂ merely indicate the amplitude during the traverse, and do not indicate the distance between the rubber wheel 8 and the notch 1a. Accordingly, the rubber wheel 8 does not move away from the notch 1a as the number of traverses increases, and the rubber wheel 8 is always polished while being in contact with the notch 1a.
[0038]
Since the notch 1a is a V-groove, the rubber wheel 8 appropriately moves together with the floating portion 4 during traverse, and polishing is performed while following the shape of the notch 1a. Further, it is possible to polish the wafer 1 without breaking it.
[0039]
Next, the operation in the actual polishing process will be described. The notch 1a of the wafer 1 is chamfered and ground in the previous step, and as shown in FIGS. 7 and 14, an upper chamfered surface 1b, a lower chamfered surface 1f, and an end surface 1g are formed. It is assumed that the streak 1c remains on the upper chamfered surface 1b and the like in the grinding process.
[0040]
In the two-surface polishing in which the upper chamfered surface 1b and the lower chamfered surface 1f are polished respectively, the upper chamfer is moved by moving the rubber wheel 8 in the arrow I direction while rotating the rubber wheel 8 in the arrow G direction. Polishing is performed by contacting the surface 1b and reciprocating, for example, 2 to 4 while traversing the above-described constant amplitude or gradually increasing amplitude. Thereby, the streak 1c remaining on the upper chamfered surface 1b can be erased. After polishing, the rubber wheel 8 is pulled in the direction of the arrow J and separated from the wafer 1.
[0041]
In the polishing of the lower chamfered surface 1f, only the rotation direction of the rubber wheel 8 is the direction of the arrow H, and the other operations are the same as those in the polishing of the upper chamfered surface 1b, and the lower chamfered surface 1f. The streak (not shown) can be easily erased.
[0042]
The arrow I direction and the arrow J direction indicate the directions in which the rubber wheel 8 is moved, and the approach and separation between the rubber wheel 8 and the wafer 1 are only relative. Therefore, in FIG. 3, when the wafer 1 is moved, the arrow I direction corresponds to the arrow E direction, and the arrow J direction corresponds to the arrow F direction.
[0043]
After the above-mentioned two-side polishing is completed, half-path polishing is performed. As shown in FIGS. 5, 6, 10, and 11, the rubber wheel 8 is rotated in the direction of the arrow G and traversed in the direction of the surface 1 e of the wafer 1 with a constant amplitude or gradually increasing amplitude. As shown in FIG. 11, the chamfered surface 1b is moved along the end surface 1g to continuously polish the chamfered surface 1b and the end surface 1g, and the rubber wheel 8 is allowed to escape in the direction of the arrow K, that is, downward. The corner 1h between the upper chamfered surface 1b and the end surface 1g is rounded and polished to a continuous mirror surface with extremely small surface roughness.
[0044]
Next, as shown in FIGS. 5, 6, 12, and 13, the rubber wheel 8 is rotated in the direction of the arrow H and traversed in the same manner, along the end surface 1 g from the lower chamfered surface 1 f of the notch 1 a. By moving the chamfered surface 1b and the end surface 1g continuously, the rubber wheel 8 is allowed to escape in the direction of arrow M, that is, upward, as shown in FIG. The corner 1i between 1 g is rounded and polished to a continuous mirror surface with very low surface roughness. Here, the end face 1g was also polished twice.
[0045]
In this way, by performing the two-surface polishing and the half-path polishing, as shown in FIG. 13, the upper chamfered surface 1b, the end surface 1g, and the lower chamfered surface 1f are continuously uniform and have a small surface roughness. Polished to the world's highest level mirror surface (surface roughness 200 Å).
[0046]
On the other hand, an upper chamfered surface 1b, a lower chamfered surface 1f, an end surface 1g, a corner 1h between the upper chamfered surface 1b and the end surface 1g, and a corner 1i between the lower chamfered surface 1f and the end surface 1g are provided. As shown in FIG. 8, in the five-side polishing for polishing, the rubber wheel 8 is first moved in the direction of arrow I while rotating in the direction of arrow G, and is brought into contact with the upper chamfered surface 1b while keeping the height constant. The polishing is performed by reciprocating 2 to 4 times, for example, while performing the above-described constant amplitude or gradually increasing amplitude traverse. Thereby, the streak 1c remaining on the upper chamfered surface 1b can be erased. After polishing, the rubber wheel 8 is pulled in the direction of the arrow J and separated from the wafer 1.
[0047]
Next, the rubber wheel 8 is rotated in the direction of arrow H, the rubber wheel 8 is similarly moved, the lower chamfered surface 1f is polished while traversing, and the rubber wheel 8 is further rotated in the direction of arrow G or H. Similarly, the rubber wheel 8 is moved to polish the end face 1g while traversing.
[0048]
Then, the rubber wheel 8 is rotated in the directions of arrows G and H, respectively, and the rubber wheel 8 is similarly moved to polish the corner 1h and the corner 1i while traversing.
[0049]
When the five-surface polishing is performed, the corner portions 1h and 1i are also chamfered, so that the cross section of the notch 1a is a pentagon as shown in FIG. Therefore, when the above-described half-track polishing shown in FIGS. 10 to 12 is performed together, as shown in FIG. 13, the upper chamfered surface 1b, the end surface 1g, and the lower chamfered surface 1f are extremely uniform and have a small surface roughness. Polished to the world's highest level mirror surface (surface roughness 200 Angstroms). The end face 1g is polished three times, resulting in a better finish than the two-face polishing.
[0050]
【The invention's effect】
As described above, the present invention provides a chamfered notch while rotating a rubber wheel formed in a direction perpendicular to the surface of the wafer and thinner than the width of the notch of the wafer and containing an abrasive, while traversing the surface of the wafer. Since the chamfered surface and the end surface are continuously polished by moving from the surface to the end surface, and the rubber wheel is allowed to escape in the direction of the end surface after the end surface has been polished, the end surface that tends to become rough is at least twice. It has the effect that it can be polished and polished to a mirror surface with a very small surface roughness that is continuous with the chamfered surface.
[0051]
In addition, a rubber wheel that is formed thin enough to rotate in a direction perpendicular to the wafer surface and can enter the deepest part of the notch of the wafer with sufficient margin, and containing an abrasive, has a constant amplitude or increase in the wafer surface direction. Since the chamfered surface of the notch is polished while traversing with the amplitude and maintaining the contact state with the notch, there is an effect that the streak formed by the grinding in the previous process can be quickly removed.
[0052]
Furthermore, in addition to the above method, the corner between the upper chamfered surface and the end surface and the corner between the lower chamfered surface and the end surface are each polished, so that the chamfered surface is formed. It is possible to easily remove the streak and to obtain an effect that the upper and lower corners formed by the chamfered surface and the end surface can be removed by polishing.
[0053]
In addition, since the polishing of the chamfered surface of the notch of the wafer by the rubber wheel and the polishing performed continuously from the chamfered surface to the end surface by the rubber wheel are performed in combination, not only the upper and lower chamfered surfaces. The upper and lower chamfered surfaces and end surfaces can be rounded at the upper and lower corners, and as a result, the upper and lower chamfered surfaces and end surfaces can be polished to a continuous mirror surface by one rubber wheel. effective.
[0054]
Further, the upper and lower chamfered surfaces of the notch of the wafer by the rubber wheel described above, the end surface, the polishing of the corners between the upper and lower chamfered surfaces and the end surface, and the chamfered surface by the rubber wheel. Since it is performed in combination with polishing that is continuously performed to the end face, the upper and lower chamfered faces and end faces are made uniform by one rubber wheel, and the world's highest level that is extremely uniform and has low surface roughness. An excellent effect can be obtained in that it can be polished to a mirror surface (surface roughness 200 angstroms).
[0055]
A spindle portion that is formed to be thinner than the width of the notch so that it can enter the deepest portion of the notch of the wafer with a margin and rotates a rubber wheel containing an abrasive in a direction perpendicular to the surface of the wafer; and the spindle A floating portion provided with a polishing force adjusting mechanism for adjusting a pressing force of an elastic body that presses and urges a rubber wheel to a notch, a table portion that supports the floating portion via a linear guide, and the table And a drive mechanism that causes the rubber wheel to reciprocate linearly while following the shape of the notch by the floating part during polishing while traversing the part with a constant amplitude or gradually increasing amplitude in the direction of the rotation axis of the rubber wheel. The floating part is configured to be slightly slidable in the direction in which the rubber wheel and the notch approach or leave, and the rubber wheel is used as the drive mechanism. The chamfered surface on the upper side of the notch, the lower chamfered surface, the end surface, the corner between the upper chamfered surface and the end surface, and the lower chamfered surface while traversing with a constant amplitude or gradually increasing amplitude in the rotational axis direction of the rubber wheel. The corners between the chamfered surface and the end surface are each configured to be polished, and the rubber wheel is similarly traversed while being moved along the end surface from the upper chamfered surface or the lower chamfered surface. Since the polishing is continuously performed up to the end face, it is possible to obtain a notch of a wafer having a very small surface roughness while eliminating the use of sludge that is extremely difficult to handle.
[Brief description of the drawings]
FIG. 1 to FIG. 13 relate to an embodiment of the present invention, and FIG. 1 is a perspective view of a wafer having a notch and OF formed and chamfered.
FIG. 2 is a plan view of an essential part showing a position of a rubber wheel with respect to a notch of a wafer.
FIG. 3 is a perspective view of a wafer notch polishing apparatus.
FIG. 4 is a perspective view of a main part showing a rotation direction of a rubber wheel, a moving direction, and a moving direction of a wafer.
FIG. 5 is a plan view showing a change in amplitude when a rubber wheel is traversed with gradually increasing amplitude during notch polishing.
FIG. 6 is a plan view showing a change in amplitude when the rubber wheel is traversed at a constant amplitude during notch polishing.
FIG. 7 is a longitudinal sectional view showing the rotation direction and movement direction of a rubber wheel during two-side polishing and the positional relationship with a wafer.
FIG. 8 is a longitudinal sectional view showing the rotational direction and moving direction of a rubber wheel during five-surface polishing, and the positional relationship with a wafer.
FIG. 9 is a vertical cross-sectional view of a notch portion of a wafer in which a corner portion is chamfered by pentahedral polishing and a cross section becomes a pentagon.
FIG. 10 is a longitudinal sectional view showing a state where polishing is performed from the chamfered surface to the end surface on the upper side of the notch of the wafer by half-path polishing.
FIG. 11 is a longitudinal cross-sectional view of a notch of a wafer showing a state in which a corner between an upper chamfered surface and an end surface is rounded by half-track polishing, and a continuous mirror surface is polished from the upper chamfered surface to the end surface. FIG.
FIG. 12 is a longitudinal sectional view showing a state in which the chamfered surface from the lower side of the notch of the wafer to the end surface is polished by half-path polishing.
FIG. 13 shows a state in which the corner between the lower chamfered surface and the end surface is rounded by half-track polishing, and the upper chamfered surface, the end surface, and the lower chamfered surface are polished to a continuous mirror surface. It is a longitudinal cross-sectional view of the notch part of the wafer shown.
FIG. 14 is a perspective view of a notch of a wafer in which a streak is left on a chamfered surface by chamfering grinding according to a conventional example.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Wafer 1a Notch 1b Upper chamfer surface 1c Strip 1d Deepest part 1e Surface 1f Lower chamfer surface 1g End surface 1h Corner part 1i Corner part 2 Wafer notch polishing apparatus 3 Spindle part 4 Floating part 5 Table part 6 Drive mechanism 8 Rubber wheel 9 Abrasive force adjustment mechanism

Claims (1)

A spindle portion that is formed thinner than the width of the notch of the wafer and that contains an abrasive and rotates in a direction perpendicular to the surface of the wafer, and the spindle portion is fixed and presses the rubber wheel against the notch. A floating portion provided with a polishing force adjusting mechanism for adjusting the pressing force of the elastic body, a table portion that supports the floating portion via a linear guide, and the table portion having a constant amplitude or in the rotational axis direction of the rubber wheel. And a drive mechanism for reciprocally reciprocating the rubber wheel while following the shape of the notch by the floating portion during polishing while traversing with gradually increasing amplitude, and the floating portion with the rubber wheel with respect to the table portion The rubber wheel is configured to be slightly slidable in a direction in which the notch approaches or leaves, and the rubber wheel is moved by the drive mechanism. A chamfered surface on the upper side of the notch, a lower chamfered surface, an end surface, a corner between the upper chamfered surface and the end surface, and the lower side Each corner between the chamfered surface and the end surface is configured to be polished, and the rubber wheel is similarly traversed while being moved along the end surface from the upper chamfered surface or the lower chamfered surface. A wafer notch polishing apparatus characterized by being configured to continuously polish from the chamfered surface to the end surface.

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