JP4308103B2 - Nanocrystal growth method and apparatus - Google Patents

Description

  The present invention relates to a nanocrystal growth method and apparatus, and is particularly suitable when applied to a method for producing a nano-order crystal structure using a metal needle.

  In general, MBE (molecular beam epitaxy) or MOVPE (organic metal vapor phase epitaxy) is known as a method for forming a structure of an electronic device or an optical device by crystal growth. These were developed as a method of performing hetero-epi growth on a large-area substrate mainly using a material having a close lattice constant. In recent years, processing technology on Si substrates has been remarkably developed, and high-quality integrated circuits and photonic crystals have been mass-produced. In a photonic crystal waveguide, a waveguide having a resonator structure with a Q value of 10,000 or more is obtained on an SOI substrate (Non-patent Document 1).

  On the other hand, with compound semiconductors such as GaAs and InP, it is not possible to obtain Si level productivity due to the effects of defects and damage, except for devices having functions impossible with Si, such as light emission and light reception. Currently. At present, there is no method for easily and easily producing a light emitting / receiving element, which is a feature of a compound semiconductor, in a device fabricated on Si. It is known that when GaN quantum dots are grown on the Si (111) substrate surface, blue to red light emission is obtained due to the influence of strain from the substrate depending on the size of the quantum dots. White light can be obtained by superimposing quantum dots of different sizes. However, since defects grow by superimposing quantum dots, the current injection device has not yet been manufactured (Non-patent Document 2).

In compound semiconductors such as Si or GaAs, VLS (Vapor Liquid Solid) growth in which crystal growth selectively occurs under the fine metal particles due to a decrease in melting point due to eutectic with a metal such as Au is known (non-non-crystalline). Patent Document 3). In this VLS growth, a columnar structure grows in the [111] B direction, and depending on the growth conditions, nanowires with a constant column diameter in the length direction can be formed. This nanowire can be manufactured on a substrate having a different lattice constant, and a heterojunction or a pn junction can be formed.
S. Mitsugi, A .; Shinya, E .; Kuramochi, M .; Notomi, T .; Tsuchizawa, T .; Watanabe, “Resonant tunneling wavelength filters with high Q and high transmissivity based on photonic crystal slabs, LEOS 2003, 2003/10 Ac 26 / 30-30. B. Damilano, N .; Grandjean, F.M. Semond, J .; Massies, and M.M. Leroux, Appl. Phys. Lett. 75,962 (1999) S. Bhunia, T .; Kawamura, Y .; Watanabe, S.M. Fujikawa, and K.K. Tokushima, Appl. Phys. Lett. 83, 3371 (2003)

However, in the VLS growth, since Au fine particles serving as a catalyst are in a floating state, the growth point is easy to move, and it is difficult to obtain a high-quality single crystal. Further, in VLS growth, twins are formed, and there is a concern about deterioration of current characteristics and light absorption there, so that it is not a practically suitable method.
Accordingly, an object of the present invention is to provide a nanocrystal growth method and apparatus capable of performing nanolevel crystal growth on substrates having different lattice constants while stably controlling the position of the growth point. It is.

  In order to solve the above-described problem, the nanocrystal growth method according to claim 1 is based on a needle with a nano-sized metal tip or a nano-sized metal particle attached to the tip at a predetermined degree of vacuum. A step of contacting the material, a step of crystal growth on the substrate by supplying a gas as a raw material for crystal growth to the periphery of the needle while heating the needle, and the needle while growing the crystal. And a step of changing a positional relationship between the substrate and the substrate.

  As a result, the nano-region part at the tip of the needle becomes the reaction point for crystal growth, but the piezo element that moves the needle can operate and control with nano-order accuracy, so crystal growth with good position controllability is possible. Can be made. In the present invention, Au fine particles are not in a floating state as in VLS growth, but are fixed to the needle, and the growth point is difficult to move. Therefore, it is easy to grow a single crystal and it is possible to grow a higher quality crystal. . A nanostructure that can be formed by the present invention has a simpler process than that formed by etching or the like using a lithography technique, and more complicated structures difficult to be formed by lithography can be easily formed. Compared to the MBE method and the MOVPE method, the raw material supply for the nano region is sufficient, so that the raw material consumption is small at the order level.

The nanocrystal growth method according to claim 2 is characterized in that the heating method of the needle is resistance heating or light irradiation.
Thereby, only the part which the needle | hook touched the base material can be heated, and the other area | region of a base material can be maintained at low temperature. For this reason, it becomes possible to selectively grow a crystal only in a portion where the needle touches the substrate, and a nano-order crystal structure can be produced with good position controllability.

Moreover, according to the nanocrystal growth method according to claim 3, the method of changing the positional relationship between the needle and the base material is a method of moving the needle or the base material in a predetermined direction in the nano order. It is characterized by.
This makes it possible to produce nanostructures such as spheres, triangular pyramids, and coil shapes in addition to nanowires on a nanoscale, making it easy to produce light-emitting / receiving elements made of compound semiconductors on electronic devices fabricated on Si. Can be built.

Further, according to the nanocrystal growth method according to claim 4, the gas used as the raw material for crystal growth is an organometallic compound.
This makes it possible to fabricate a light emitting / receiving element made of a compound semiconductor on an electronic device fabricated on Si at a nanoscale while suppressing the consumption of an organometallic compound. Can be created inexpensively.

Further, according to the nanocrystal growth apparatus according to claim 5 , a reaction tube in which a sample can be installed, a vacuum pump for evacuating the reaction tube, and a gas for supplying a gas as a raw material for crystal growth into the reaction tube Position control means for controlling the positional relationship between a supply source, a needle having a nano-sized metal tip or a nano-sized metal particle attached to the tip, and a tip of the needle and the sample. And a heating means for heating the needle.
This makes it possible to perform nano-level crystal growth using a metal catalyst while fixing the position of the growth point. For this reason, it is possible to perform nano-level crystal growth on substrates having different lattice constants while stably controlling the position of the growth point, and it is possible to integrate devices composed of various materials. it can.

Further, according to the nanocrystal growth apparatus according to claim 6 , the support that supports the needle, the gas introduction part that draws the gas supplied into the reaction tube into the support, and the vicinity of the needle are disposed. And an ejection hole for ejecting the gas drawn into the support body.
As a result, it is possible to support the needle with a material having low thermal conductivity, and it is possible to eject the source gas only in the vicinity of the needle. For this reason, only the part where the needle touches the base material can be efficiently heated, and other regions of the base material can be kept at a low temperature, and the source gas is jetted only in the vicinity of the growth point. Can do. As a result, the crystal can be selectively grown only on the portion where the needle touches the base material, a nano-order crystal structure can be produced with good position controllability, and the consumption of raw materials is suppressed. be able to.

  As described above, according to the present invention, even when the lattice constant is different by controlling the position of the needle on which the metal catalyst is formed, even when the lattice constant is different, high-quality light emission and light reception of nano-size. A device can be manufactured with high position controllability, and an optical circuit can be added to an electronic circuit manufactured using Si.

Hereinafter, a nanocrystal growth method and apparatus according to an embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a block diagram showing a schematic configuration of the nanocrystal growth apparatus according to the first embodiment of the present invention.
In FIG. 1, a turbo molecular pump 3 that evacuates the reaction tube 1 is connected to the reaction tube 1 via an exhaust pipe 11, and a rotary pump 2 that performs roughing is connected to the turbo molecular pump 3. ing. A filter 4 for filtering impurities is provided between the reaction tube 1 and the turbo molecular pump 3.

Further, gas supply sources 7 a and 7 b for supplying a raw material gas GS, which is a raw material for crystal growth, into the reaction tube 1 are connected to the reaction tube 1 through a gas supply tube 12. In addition, as source gas GS, organometallic compounds, such as TMGa (trimethylgallium) and TBAs (tertiarybutyralsine), can be used, for example.
Here, in the flow path of the gas supplied from the gas supply sources 7a and 7b, the valves 8a and 8b for opening and closing the gas flow path, the pressure gauges 9a and 9b for measuring the gas pressure, and the gas flow rate are adjusted. The flow regulators 10a and 10b are provided respectively. The gas supply pipe 12 is provided with a leak valve 6, and one end of a pressure adjusting pipe 13 is connected to the upstream side of the leak valve 6. The other end of the pressure adjustment pipe 13 is connected between the turbo molecular pump 3 and the rotary pump 2, and the pressure adjustment pipe 13 has a flow rate regulator 5 that adjusts the flow rate of the gas flowing through the pressure adjustment pipe 13. Is provided.

2 is a cross-sectional view showing a configuration example in the reaction tube 1 of FIG. 1, and FIG. 3 is a plan view showing a configuration example of the glass folder 22 of FIG.
In FIG. 2, a sample stage 21 on which a sample S is placed is provided in the reaction tube 1, and a glass folder 22 that holds a metal plate 23 is provided on the sample stage 21. Note that the holding body for holding the metal plate 23 may be made of a material such as ceramic in addition to glass. Here, it is preferable that the holding body for holding the metal plate 23 is made of a material having a lower thermal conductivity than the metal constituting the metal plate 23.

  Further, the metal plate 23 is provided with a metal needle 23a having a tip having a nano-sized diameter. In addition, as a metal which comprises the metal plate 23 and the metal needle 23a, you may make it use these alloys other than gold | metal | money, silver, copper, or platinum, for example. The material of the metal plate 23 and the metal needle 23a may be the same or different. Further, instead of the metal needle 23a, a needle having nano-sized metal particles attached to the tip may be used. For example, a conductor such as a carbon nanotube attached with metal particles, or a metal with a sharpened tip. An optical fiber to which is attached may be used.

  The glass folder 22 is provided with an opening 22 a for projecting a metal needle 23 a provided on the metal plate 23, and a gas introduction unit for drawing the source gas GS introduced into the reaction tube 1 into the glass folder 22. 22c is provided. As shown in FIG. 3, a gas ejection hole 22 b for ejecting the source gas GS drawn into the glass folder 22 is disposed around the opening 22 a provided in the glass folder 22. The gas supply pipe 12 of FIG. 1 is connected to a gas introduction part 22 c provided in the glass folder 22 via an O-ring 27.

The gas introduction part 22 c can be arranged so that the source gas GS supplied into the reaction tube 1 is taken into the glass folder 22 from the side of the glass folder 22.
A glass rod 29 for irradiating the metal plate 23 with light is disposed on the glass folder 22. Then, by irradiating the metal plate 23 with light through the glass rod 29, the temperature of the metal needle 23a can be raised. Here, by arranging the glass rod 29 on the glass folder 22, the metal plate 23 can be efficiently irradiated with light, and the tip of the metal needle 23a can be efficiently heated. Further, by using a material having high thermal conductivity as the metal plate 23, the metal needle 23a can be efficiently heated through the metal plate 23. As a method for heating the metal needle 23a, resistance heating may be used in addition to the method using light irradiation.

A power source 24 is connected between the sample stage 21 and the metal plate 23, and an ammeter 25 for measuring a tunnel current flowing through the tip of the metal needle 23a is connected. The metal plate 23 is provided with a thermocouple 28 for measuring the temperature of the metal needle 23a.
Further, in the reaction tube 1, a drive unit that moves the glass folder 22 or the sample stage 21 in the XYZ directions in nanoscale units is provided. As the drive unit, for example, a piezo element or a stepping motor can be used.

  When crystal growth is performed on the sample S, the sample S is placed on the sample stage 21. Then, the reaction tube 1 is evacuated by the rotary pump 2 and the turbo molecular pump 3. Further, the positional relationship between the tip of the metal needle 23 a and the sample S is adjusted by moving the glass folder 22 or the sample stage 21 while referring to the measurement value obtained by the ammeter 25. Then, the tip of the metal needle 23 a is heated to a predetermined temperature by irradiating the metal plate 23 with light through the glass rod 29 while referring to the measurement value by the thermocouple 28.

When the inside of the reaction tube 1 reaches a predetermined degree of vacuum, the vacuum valves 8a and 8b are opened, and the vapor pressure of the raw material gas GS is used, whereby the raw material gas GS is passed through the flow rate regulators 10a and 10b and the leak valve 6. Is fed into the reaction tube 1.
The raw material gas GS supplied into the reaction tube 1 is guided into the glass folder 22 through the gas introduction part 22c, and is ejected onto the sample S through the gas ejection hole 22b. Here, by arranging the gas ejection holes 22b around the metal needle 23a, the raw material gas GS can be efficiently brought into contact with the metal needle 23a. Compared with the MBE method or the MOVPE method, the raw material supply for the nano region is provided. Therefore, it is possible to reduce raw material consumption at the order level.

  Here, after arranging the tip of the metal needle 23a on the sample S, when the temperature of the tip of the metal needle 23a is raised, a combined liquid of the sample S and the metal is generated. When the gas-phase organometallic compound is brought into contact with the combined financial liquid in a state where the combined financial liquid is generated, the elemental form is taken into the combined financial liquid by a catalytic reaction, and the organometallic compound is contained in the combined financial liquid. As a result, a supersaturation phenomenon of the constituent elements occurs, and excess elements are deposited at the interface between the combined financial liquid and the sample S, and a wire-like single crystal can be grown.

  Here, by using the metal needle 23a as the metal catalyst, it is possible to perform nano-level crystal growth using the metal catalyst while fixing the position of the growth point. Therefore, it is possible to perform nano-level crystal growth on the sample S having different lattice constants while stably controlling the position of the growth point, and it is possible to integrate devices composed of various materials. it can.

In addition, the growth point can be locally and efficiently heated by using the metal needle 23a. For this reason, it becomes possible to raise the growth temperature and the source gas GS can be sufficiently diffused in the combined financial liquid. As a result, crystal growth can be performed while preventing movement of the crystal axis direction, and high-quality single crystals can be stably produced.
Note that the position of crystal growth may be controlled while being estimated with an electron microscope or a scanning probe microscope that observes by feeding back the current flowing through the metal needle 23a or the vibration of the metal needle 23a.

FIG. 4 is a perspective view showing a configuration example of a GaAs nanowire produced by the nanocrystal growth method of the present invention.
In FIG. 4, a GaAs substrate 31 is used as the sample S in FIG. Further, TMGa and TBAs were used as the source gas GS. Further, gold was used as the material for the metal needle 23a and the metal plate 23. Then, the GaAs substrate 31 is placed on the sample stage 21, and the pressure in the reaction tube 1 is set to 10 ⁻³ Torr while evacuating the reaction tube 1 with the rotary pump 2 and the turbo molecular pump 3. The leak valve 6 was adjusted. Then, the temperature of the metal plate 23 was raised so that the temperature of the metal needle 23a was 700 ° C., and the source gas GS was introduced into the reaction tube 1 so that the flow rate ratio of TMGa and TBAs became 1:60. .

  Here, when the tip of the metal needle 23a is placed on the GaAs substrate 31 and then the tip of the metal needle 23a is heated, a combined liquid of GaAs and gold is generated. Then, in a state where the combined financial liquid is generated, when the gas phase TMGa and TBAs come into contact with the combined financial liquid, the catalytic reaction causes Ga and As to be taken into the combined financial liquid in the elemental form, A supersaturation phenomenon of Ga and As occurs, and excess GaAs is deposited at the interface between the combined financial liquid and the GaAs substrate 31. Then, the GaAs nanowire 32 is formed on the GaAs substrate 31 by controlling the position of the sample stage 21 and moving the metal needle 23a.

When the GaAs nanowire 32 was formed on the GaAs substrate 31, the GaAs nanowire 32 was confirmed to be a single crystal by observing the GaAs nanowire 32 with a transmission electron microscope.
In the embodiment of FIG. 4, the GaAs nanowires 32 are formed on the GaAs substrate 31, but a three-dimensional structure such as a sphere, a triangular pyramid, or a coil shape may be fabricated on a nanoscale.

FIG. 5A is a perspective view showing a configuration example of a Si electronic circuit on which a pin-type nanodiode is mounted, and FIG. 5B is an enlarged plan view showing the pin-type nanodiode in FIG. It is.
In FIG. 5, a Si substrate 41 on which an electronic circuit 42 is formed is used as the sample S in FIG. The Si substrate 41 is provided with a region where the pin-type nanodiode 48 is formed, and in the region where the pin-type nanodiode 48 is formed, a negative electrode 43 and a positive electrode 47 are formed. Here, the distance between the negative electrode 43 and the positive electrode 47 was 1 μm, and the material of the negative electrode 43 and the positive electrode 47 was W or Mo. Further, TMIn (trimethyllinium), TBP (tertiarybutylphosphine), and TBAs were used as the source gas GS. Further, DEZn (dimethylzinc) was used as a p-type dopant material, and tetraethylsilane was used as an n-type dopant material. Further, instead of the metal needle 23a, a carbon nanotube in which gold fine particles having a diameter of 20 nm were bonded to the tip at a high temperature was used.

Then, the Si substrate 41 on which the electronic circuit 42 is formed is placed on the sample stage 21, and the temperature of the carbon nanotubes to which the gold fine particles are bonded is raised while evacuating the reaction tube 1. The raw material gas GS was introduced into the reaction tube 1 such that the flow rate ratio between the NO and the group III raw material was 1:60. In addition, the flow rate of the dopant raw material was adjusted so that the carrier concentration was 10 ¹⁸ cm ⁻³ .
Then, the pin-type nanodiode 48 was formed on the Si substrate 41 by controlling the position of the sample stage 21 and moving the carbon nanotubes to which the gold fine particles were bonded. Here, the pin-type nanodiode 48 is provided with an n-InP layer 44, an InAs layer 45, and a p-InP layer 46. The n-InP layer 44 is connected to the negative electrode 43, and the p-InP layer 46 is + Connected to electrode 47. The length of the n-InP layer 44 was 490 nm, the length of the InAs layer 45 was 20 nm, and the length of the p-InP layer 46 was 490 nm.

  Then, current was passed through the pin-type nanodiode 48 through the negative electrode 43 and the positive electrode 47 to confirm light emission at 1.3 μm. In addition, two pin-type nanodiodes 48 are arranged opposite to each other on the Si substrate 41, and a current is passed through one pin-type nanodiode 48 to operate as a light-emitting element, while the other pin-type nanodiode 48 is operated. Optical connection was made by operating as a light receiving element by flowing a current in the opposite direction. Then, a 1 Gbit transmission rate was confirmed between the elements of the electronic circuit 42.

FIG. 6A is a perspective view illustrating a configuration example of a photonic crystal laser on which a pin-type nanodiode is mounted, and FIG. 6B is an enlarged cross-sectional view of the pin-type nanodiode in FIG. FIG.
In FIG. 6, a photonic crystal waveguide formed on an SOI substrate is used as the sample S in FIG. Here, an n-Si layer 53 is formed on the p-Si substrate 51 via an air layer 52, and the n-Si layer 53 has an opening disposed so as to avoid a portion serving as a waveguide. 54 is provided. The n-Si layer 53 is provided with an opening 55 disposed on the photonic crystal waveguide. The air layer 52 can be formed by removing the SiO ₂ layer of the SOI substrate with hydrofluoric acid. Further, TMIn (trimethyllinium), TBP (tertiarybutylphosphine), and TBAs were used as the source gas GS. Further, DEZn (dimethylzinc) was used as a p-type dopant material, and tetraethylsilane was used as an n-type dopant material. Further, instead of the metal needle 23a, a carbon nanotube in which gold fine particles having a diameter of 20 nm were bonded to the tip at a high temperature was used.

Then, the p-Si substrate 51 on which the photonic crystal waveguide is formed is placed on the sample stage 21, and the temperature of the carbon nanotube to which the gold fine particles are bonded is raised while evacuating the reaction tube 1. The raw material gas GS was introduced into the reaction tube 1 such that the flow rate ratio of the Group V raw material and the Group III raw material was 1:60. The flow rate of the dopant material was adjusted so that the carrier concentration was 10 ¹⁸ cm ⁻³ .

Then, the p-InP layer 56, the InAs layer 57, and the n-InP layer 58 are sequentially stacked on the p-Si substrate 51 by controlling the position of the sample stage 21 and moving the carbon nanotubes to which the gold fine particles are bonded. As a result, a pin-type nanodiode was formed in the opening 55. Here, the bottom surface of the p-InP layer 56 was connected to the p-Si substrate 51, and the tip of the n-InP layer 58 was connected to the n-Si layer 53. Further, the InAs layer 57 was disposed so as to be positioned at the center height of the n-Si layer 53.
Then, electrodes were formed on the p-Si substrate 51 and the n-Si layer 53, and current was passed through a pin-type nanodiode formed in the opening 55, thereby confirming light emission at 1.3 μm. In addition, it was confirmed that laser oscillation occurred in the waveguide direction by using a photonic crystal waveguide having a resonator structure with a high Q value.

FIG. 7 is a perspective view showing a configuration example of a GaN white nanodiode manufactured by the nanocrystal growth method of the present invention.
In FIG. 7, a high-resistance Si substrate 61 is used as the sample S in FIG. Here, on the high-resistance Si substrate 61, −electrodes 63a to 63c and + electrodes 67a to 67c are formed, and W is used as a material for the −electrodes 63a to 63c and the + electrodes 67a to 67c. Further, TMGa, TMAl and NH ₃ were used as the source gas GS. Further, SiH ₄ was used as an n-type dopant material, and DEZn was used as an n-type dopant material. Further, instead of the metal needle 23a, a carbon nanotube in which gold fine particles having a diameter of 20 nm were bonded to the tip at a high temperature was used.

Then, the high resistance Si substrate 61 on which the negative electrodes 63a to 63c and the positive electrodes 67a to 67c were formed was placed on the sample stage 21, and gold fine particles were joined while evacuating the reaction tube 1. The temperature of the carbon nanotube was raised, and the raw material gas GS was introduced into the reaction tube 1 such that the flow ratio of the Group V raw material and the Group III raw material was 1:60. In addition, the flow rate of the dopant raw material was adjusted so that the carrier concentration was 10 ¹⁸ cm ⁻³ .
Then, the GaN red nanodiode 68a is formed between the electrode 63a and the + electrode 67a by controlling the position of the sample stage 21 and moving the carbon nanotubes to which the gold fine particles are bonded, and then the electrode 63b and the + electrode. A GaN yellow nanodiode 68b was formed between 67b and a GaN blue nanodiode 67c between the electrode 63c and the + electrode 67c.

  Here, the GaN red nanodiode 68a is provided with an n-AlN wire layer 64a, a GaN quantum dot layer 65a, and a p-AlN wire layer 66a, and the n-AlN wire layer 64a is connected to the negative electrode 63a, and p- The AlN wire layer 66a was connected to the positive electrode 67a. The diameter of the n-AlN wire layer 64a is 20 nm, the length is 500 nm, the diameter and length of the GaN quantum dot layer 65a are adjusted so that the emission wavelength is 450 nm, and the diameter of the p-AlN wire layer 66a is The length was 20 nm and the length was 500 nm.

  In addition, the GaN yellow nanodiode 68b is provided with an n-AlN wire layer 64b, a GaN quantum dot layer 65b, and a p-AlN wire layer 66b, and the n-AlN wire layer 64b is connected to the negative electrode 63b, and p-AlN. The wire layer 66b was connected to the + electrode 67b. The diameter of the n-AlN wire layer 64b is 20 nm, the length is 500 nm, the diameter and length of the GaN quantum dot layer 65b are adjusted so that the emission wavelength is 520 nm, and the diameter of the p-AlN wire layer 66b is The length was 20 nm and the length was 500 nm.

  The GaN blue nanodiode 68c is provided with an n-AlN wire layer 64c, a GaN quantum dot layer 65c, and a p-AlN wire layer 66c. The n-AlN wire layer 64c is connected to the negative electrode 63c, and p-AlN. The wire layer 66c was connected to the + electrode 67c. The diameter of the n-AlN wire layer 64c is 20 nm and the length is 500 nm, the diameter and length of the GaN quantum dot layer 65c are adjusted so that the emission wavelength is 600 nm, and the diameter of the p-AlN wire layer 66c is The length was 20 nm and the length was 500 nm.

The interval between the GaN red nanodiode 68a, the GaN yellow nanodiode 68b, and the GaN blue nanodiode 67c was 500 nm.
Then, white light emission was confirmed by simultaneously passing current through the GaN red nanodiode 68a, the GaN yellow nanodiode 68b, and the GaN blue nanodiode 67c through the -electrodes 63a to 63c and the + electrodes 67a to 67c, respectively. Here, the GaN red nanodiode 68a, the GaN yellow nanodiode 68b, and the GaN blue nanodiode 67c are arranged so as to be adjacent to each other at a minute interval, whereby the GaN red nanodiode 68a, the GaN yellow nanodiode 68b, and the GaN blue nanodiode 67c. White light emission can be obtained without overlapping each other, and the light emission efficiency can be improved.

  The nanocrystal growth method of the present invention can produce nano-sized high-quality light-emitting and light-receiving devices with good position controllability, and is made of a compound semiconductor on an integrated circuit or photonic crystal made on Si. Nano-level light emitting and receiving elements can be easily built with high quality.

It is a block diagram which shows schematic structure of the nanocrystal growth apparatus which concerns on one Embodiment of this invention. It is sectional drawing which shows the structural example in the reaction tube 1 of FIG. It is a top view which shows the structural example of the glass folder 22 of FIG. It is a perspective view which shows the structural example of the GaAs nanowire produced with the nanocrystal growth method of this invention. FIG. 5A is a perspective view showing a configuration example of a Si electronic circuit on which a nano light emitting / receiving element is mounted, and FIG. 5B is an enlarged plan view showing the nano light emitting / receiving element in FIG. 5A. It is. FIG. 6A is a perspective view illustrating a configuration example of a photonic crystal laser on which a pin-type nanodiode is mounted, and FIG. 6B is an enlarged cross-sectional view of the pin-type nanodiode in FIG. FIG. It is a perspective view which shows the structural example of the GaN white nano diode produced with the nanocrystal growth method of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Reaction pipe 2 Rotary pump 3 Turbo molecular pump 4 Filter 5, 10a, 10b Flow regulator 6 Leak valve 7a, 7b Gas supply source 8a, 8b Valve 9a, 9b Pressure gauge 11 Exhaust pipe 12 Gas supply pipe 13 Pressure adjustment pipe S Sample 21 Sample stage 22 Glass folder 22a Opening 22b Ejection hole 22c Gas introduction part 23 Metal plate 23a Metal needle 24 Power supply 25 Ammeter 26 Gas pipe 27 O-ring 28 Thermocouple 29 Glass rod GS Gas 31 GaAs substrate 32 GaAs nanowire 41, 61 Si substrate 42 Electronic circuit 43, 63a-63c-Electrode 44, 58 n-InP layer 45, 57 InAs layer 46, 56 p-InP layer 47, 67a-67c + electrode 48 pin-type nanodiode 51 p-Si substrate 52 Air layer 5 n-Si layer 54, 55 opening 64a to 64c n-AlN wire layer 65 a to 65 c GaN quantum dot layer 66 a to 66 c p-AlN wire layer 68a GaN red nano diode 68b GaN yellow nano diode 68c GaN blue nano diode

Claims (6)

Contacting the substrate with a nano-sized metal needle or a nano-sized metal particle-attached needle at a predetermined vacuum degree, and a substrate;
Supplying a gas that is a raw material for crystal growth to the periphery of the needle while heating the needle, to grow a crystal on the substrate;
And a step of changing a positional relationship between the needle and the base material while the crystal is grown.   2. The nanocrystal growth method according to claim 1, wherein the heating method of the needle is resistance heating or light irradiation.   3. The nanocrystal growth method according to claim 1, wherein the method of changing the positional relationship between the needle and the substrate is a method of moving the needle or the substrate in a predetermined direction in a nano order. .   The nanocrystal growth method according to any one of claims 1 to 3, wherein the gas used as a raw material for crystal growth is an organometallic compound. A reaction tube in which a sample can be placed;
A vacuum pump for evacuating the reaction tube;
A gas supply source for supplying a gas as a raw material for crystal growth into the reaction tube;
A needle that is placed in the reaction tube and has a nano-sized metal needle or nano-sized metal particle at the tip; and
Position control means for controlling the positional relationship between the tip of the needle and the sample;
And a heating means for heating the needle. A support for supporting the needle;
A gas introduction part for drawing the gas supplied into the reaction tube into the support;
The nanocrystal growth apparatus according to claim 5, further comprising: an ejection hole disposed in the vicinity of the needle for ejecting the gas drawn into the support body .

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