JP5886709B2 - Method of manufacturing photonic crystal resonator and photonic crystal resonator - Google Patents

Method of manufacturing photonic crystal resonator and photonic crystal resonator Download PDF

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JP5886709B2
JP5886709B2 JP2012167455A JP2012167455A JP5886709B2 JP 5886709 B2 JP5886709 B2 JP 5886709B2 JP 2012167455 A JP2012167455 A JP 2012167455A JP 2012167455 A JP2012167455 A JP 2012167455A JP 5886709 B2 JP5886709 B2 JP 5886709B2
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nanowire
photonic crystal
groove
longitudinal direction
crystal resonator
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JP2014027168A (en
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篤 横尾
篤 横尾
ビロウォスト ダナン
ビロウォスト ダナン
納富 雅也
雅也 納富
国強 章
国強 章
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日本電信電話株式会社
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Description

  The present invention relates to a method for manufacturing a photonic crystal resonator using a photonic crystal and a nanowire, and a photonic crystal resonator.

  A photonic crystal is a crystal in which holes of a periodic structure are arranged in a semiconductor such as silicon, and is expected to be applied as a light emitting element such as an ultra-small optical resonator.

  Here, the hole of the periodic structure of the photonic crystal is a cavity, and a boundary is formed between air and silicon having different refractive indexes. When light is incident, various reflections occur at the boundary between air and silicon, and interference occurs when they overlap. As a result, light having a specific wavelength is blocked by the holes in the photonic crystal, and conversely, the light intensity of the light having a predetermined wavelength is increased by interference.

  A nanowire is a rod-shaped material made of a semiconductor material and having a thickness of several tens of nanometers and a length of several microns, and is expected as a laser element material.

  Types of nanowires include InP nanowires, GaInAs / AlInAs heterostructure nanowires, and GaAs nanowires. As for the prior art of nanowire types and fabrication methods, see Non-Patent Document 1 and Non-Patent Document 2 for InP nanowires, Non-Patent Document 3 for GaInAs / AlInAs heterostructure nanowires, and Non-Patent Document 4 for GaAs nanowires. I want to be.

  AFM manipulation is a technology that observes the surface shape by scanning a probe with a tip diameter of about 10 nm along the shape of the surface of the object. Specifically, it uses an atomic force microscope system. This is a technique for moving the surface of a substrate while pushing or hooking an object (nanowire) with the probe.

  For example, there are the following examples of conventional photonic crystal resonators.

  In the technique described in Non-Patent Document 5, the resonance wavelength (550-1450 nm) changes as shown in Fig. 3 by changing the period (a: 150-600 nm) of the periodic structure as shown in Fig. 2 of the same document. From this, it can be seen that there is a problem that the hole interval of the periodic structure must be changed in order to change the resonance wavelength of the resonator.

  In the technique described in Non-Patent Document 6, in the SEM photograph of Fig. 4b of the same document, the resonance wavelength (Fig. 4a) is changed by changing the position of the hole where the left and right arrows are hanging from the center resonator part (the part without the hole). ) Will change. At the same time, the resonator Q value (oscillation line width) also changes. This shows that there is a problem that the hole position of the structure must be changed in order to change the resonance wavelength of the resonator.

  In the technology described in Non-Patent Document 7, Fig. 1b in the same document shows a diagram in which the resonance wavelength is changed by changing the hole diameter, and Fig. 1c shows a diagram in which the resonance wavelength is changed by changing the thickness of PhC (Photonic Crystal). . This shows that the hole diameter of the periodic structure and the thickness of the PhC must be changed in order to change the resonance wavelength of the resonator.

U. Krishnamachari, M. Borgstrom, BJ Ohlsson, N. Panev, L. Samuelson et al., "Defect-free InP nanowires grown in [001] direction on InP (001)", Applied Physics Letters, September 13, 2004 Sun, Vol.85, No.11, p. 2077-2079 Jianfang Wang et al., "Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires", Science, 24 August 2001, Vol. 293, p. 1455-1457 Kouta Tateno, Guoqiang Zhang, and Hidetoshi Nakano, "Growth of GaInAs / AlInAs Heterostructure Nanowires for Long-Wavelength Photon Emission", Nano Letters, 2008, Vol. 8, No. 11, p. 3645-3650 Guoqiang Zhang, Kouta Tateno, Haruki Sanada, Takehiko Tawara, Hideki Gotoh et al., "Synthesis of GaAs nanowires with very small diameters and their optical properties with the radial quantum-confinement effect", Applied Physics Letters, 2009, 95, p 123104-1-123104-3 Shota Yamada, Bong-Shik Song, Takashi Asano, and Susumu Noda, "Silicon carbide-based photonic crystal nanocavities for ultra-broadband operation from infrared to visible wavelength", Applied Physics Letters, 2011, 99, p. 201102-1- 201102-3 Yoshihiro Akahane1, Takashi Asano1, Bong-Shik Song, and Susumu Noda1, "High-Q photonic nanocavity in a two-dimensional photonic crystal", Nature, October 30, 2003, Vol.425, p. 944-947 Bong-Shik Song, Takuji Nagashima, Takashi Asano, and Susumu Noda1, "Resonant-wavelength tuning of a nanocavity by subnanometer control of a two-dimensional silicon-based photonic crystal slab structure", Applied Optics, September 10, 2009, Vol.48, No.26, p. 4899-4903

  Conventionally, in order to manufacture a light-emitting element having a photonic crystal structure, it has been necessary to form a photonic crystal structure on a substrate such as a compound semiconductor, in which processing accuracy is difficult to obtain. Has a problem in terms of machining accuracy, and there is a problem that it is difficult to obtain the expected performance. In addition, there is a method in which a photonic crystal structure is made of a material that can ensure processing accuracy such as Si, and a heterogeneous semiconductor material is introduced into the photonic crystal structure by performing buried growth using a vacuum apparatus. In some cases, advanced burying growth techniques were required, and the materials that could be embedded were limited. That is, there is a problem that it is difficult to configure a photonic crystal resonator with a combination of different materials necessary to configure an active element.

  Conventionally, in order to fabricate photonic crystal resonators with different resonance wavelengths and Q values, it is necessary to change the hole diameter and hole spacing around the resonator at the CAD design stage in electron beam lithography. It was necessary to change the design. Further, depending on the required hole diameter and hole interval, it is necessary to review the process conditions, and there is a problem that it takes time until a device having the desired characteristics is provided.

  Conventionally, it has been difficult to tune the emission peak of the luminescent material and the resonant wavelength of the photonic crystal resonator, and many have prepared several photonic crystal resonator structures with slightly different parameters. By chance, the optical characteristics were evaluated by selecting the light emitting material whose emission peak and the resonator wavelength coincided with each other.

  Conventionally, in manufacturing a coupled resonator, the coupling strength is determined by the distance between the photonic crystal resonators, and thus it is necessary to precisely control the distance between the resonators. In addition, since the distance between the resonators is determined during CAD design in the production of the photonic crystal structure, the intended coupling strength cannot be obtained due to subtle differences in process conditions. Therefore, in order to obtain flat transmission characteristics, it is also necessary to strictly control the process conditions. In order to fabricate resonators with different transmission characteristics, it was necessary to design photonic crystals with different inter-resonator distances at the CAD design stage. That is, there is a problem that adjustment of the relative positions of the resonators, Q value control, and resonance wavelength tuning are difficult.

  The object of the present invention to solve the above-mentioned problems is achieved by arranging nanowires (also called nanorods) in trenches (grooves) formed in simple line defects in photonic crystals.

The present invention relates to a method for manufacturing a photonic crystal resonator, and in a photonic crystal substrate having a periodic structure in which a plurality of periodically arranged substantially columnar holes are formed, a part of the periodic structure is provided. Providing a line defect portion in which at least one row of holes does not exist; providing a concave groove in the longitudinal direction of the line defect portion to enable installation of a substantially rectangular parallelepiped nanowire; and the longitudinal direction of the nanowire to face the longitudinal groove, viewed including the step of placing the nanowire in the groove, said adjusting the position of the nanowires placed in the groove, the resonance wavelength and the Q value of the photonic crystal resonator It is characterized by selective control .

The present invention also provides a photonic crystal resonator having a periodic structure in which a plurality of periodically arranged substantially cylindrical holes are formed in a plurality of rows. A line defect portion having no hole in a row is provided, and in the longitudinal direction of the line defect portion, a concave groove is provided, and a longitudinal direction of the nanowire is a longitudinal direction of the groove. The nanowire is placed in the groove so as to face, and by adjusting the position of the nanowire placed in the groove, the resonant wavelength and Q value of the photonic crystal resonator are selectively controlled, and the photo The nanowire is irradiated with excitation light from the upper surface of the nick crystal substrate to resonate light having a desired wavelength in the nanowire.

  Due to the arrangement of the nanowires, a resonator is formed in the simple line defect, and optical confinement becomes possible. Since the nanowires are arranged by AFM manipulation or the like, nanowires grown on another substrate can be used, and the resonator material can be selected regardless of the skeleton material of the photonic crystal.

  In addition, according to the present invention, since the resonance wavelength and Q value of the resonator can be controlled by the length of the nanowire and the embedding depth of the nanowire, the characteristics according to the purpose based on the common photonic crystal substrate Can be manufactured.

  Furthermore, according to the present invention, it is possible to reliably produce a photonic crystal resonator having characteristics according to the purpose by selecting the length and the embedding depth of the nanowire while observing the optical characteristics of the resonator. It becomes.

  In addition, according to the present invention, a device in which a plurality of resonators are arranged in series can be manufactured by arranging a plurality of nanowires in a single simple line defect trench.

  According to the present invention, since the relative position of the nanowire can be easily adjusted by AFM manipulation, a coupling resonator can be manufactured by appropriately controlling the coupling strength between the resonators.

  In addition, according to the present invention, it is possible to easily control the resonator characteristics such as the resonator wavelength and the Q value by changing the position of embedding the nanowire, the length of the nanowire, the depth of embedding the nanowire, and the like. It has further.

  As described above, according to the present invention, it is possible to easily produce a photonic crystal resonator with high accuracy using a photonic crystal skeleton material that is easy to obtain.

It is a figure which shows arrangement | positioning of the nanowire by AFM manipulation in this invention. It is a figure which shows the top view and sectional drawing showing the fundamental structure of this invention. It is an enlarged view of the section of a trench showing the basic composition of the present invention. It is a figure showing the 1st Embodiment of this invention and showing the structure of this invention which fixes nanowire with an OCD resist in a trench. It is a figure which shows the emission spectrum showing the intensity | strength with respect to the resonant wavelength in the 1st Embodiment of this invention. It is a photograph figure which shows light emission of the light emitting element created by the 1st Embodiment of this invention. It is a figure showing the 2nd Embodiment of this invention and showing the structure of this invention which changes the position which installs the nanowire embedded in a trench. It is a figure which shows the value of resonance wavelength and Q value of the resonator which changes according to the nanowire position in the 2nd Embodiment of this invention. It is a figure showing the 3rd Embodiment of this invention and showing the structure of this invention which embedded the nanowire of different length in the trench on a simple defect line. It is a figure which shows the value of the resonant wavelength which changes according to the length of nanowire in the 3rd Embodiment of this invention. It is a figure which shows Q value of the resonator which changes according to the length of nanowire in the 3rd Embodiment of this invention. FIG. 10 is a diagram illustrating a nanowire that represents a fourth embodiment of the present invention and can be moved in a trench length direction along the slope of the bottom surface of the trench by AFM manipulation. It is a figure which shows the value of the resonant wavelength which changes according to the position of nanowire in the 4th Embodiment of this invention. It is a figure which shows Q value of the resonator which changes according to the position of nanowire in the 4th Embodiment of this invention. It is a figure showing the 5th Embodiment of this invention and showing the structure of this invention which embedded 10 nanowires in the trench. FIG. 16 (a) is one example showing a transmission spectrum by adjusting the coupling constant between the resonators with the interval of each nanowire changed, and FIG. 16 (b) shows the interval of each nanowire changed. It is another figure example showing a transmission spectrum by adjustment of the coupling constant between each made resonator. It represents the 6th Embodiment of this invention and is a figure which shows the structure of this invention which embedded the nanowire of different length in the trench on a simple defect line. It is a figure which shows the value of the resonant wavelength which changes according to the length of nanowire in the 6th Embodiment of this invention. It is a figure which shows Q value of the resonator which changes according to the length of nanowire in the 6th Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(Basic configuration of the invention)
In FIG. 1, arrangement | positioning of the nanowire 3-a by AFM manipulation in this invention is shown.

  In the left diagram of FIG. 1, the two-dimensional photonic crystal 2-a has a trench 1-a on the line defect, and in the right diagram of FIG. 1, the nanowire 3-a is arranged in the trench 1-a on the line defect. This is shown in three dimensions.

  The operation principle of the present invention will be described. When the top surface of the nanowire embedded in the photonic crystal trench is irradiated with excitation light, electrons are excited in the nanowire material, and light with a wavelength different from that of the excitation light is emitted from the nanowire as the excitation electrons relax. The The photonic crystal structure consisting of periodic holes, etc. formed around the nanowire forms a resonator that confines light of a specific wavelength within a certain range, centered on the nanowire, so the light emitted from the nanowire resonates. It is confined in the vessel, leading to laser oscillation. In addition to the light irradiation from the upper surface, the nanowire can be excited by irradiating the nanowire with excitation light that has progressed through a line defect in the photonic crystal.

  The light having the resonance wavelength that oscillates in the resonator formed around the nanowire is emitted from the upper surface of the nanowire. It is also possible to take out the photonic crystal by introducing it to a line defect in the photonic crystal. For example, this resonator can be used for low threshold lasers.

  2 and 3 are a top view and a cross-sectional view showing a basic configuration of the present invention.

  The top view of FIG. 2 shows that a line defect is formed by filling a plurality of substantially cylindrical holes on a substantially center line of a two-dimensional photonic crystal 2-b having a plurality of substantially cylindrical holes. A concave trench 1-b is provided, and a substantially rectangular parallelepiped nanowire 3-b is arranged in the trench 1-b on the line defect.

  FIG. 3 shows an enlarged view of a cross section of the trench 1-b of FIG. In FIG. 3, it can be seen that the nanowire 3-b is embedded in the trench 1-b on the line defect.

(Cavity formation by nanowire embedding and fabrication of light emitting device)
FIG. 4 shows the first embodiment of the present invention, in which the nanowire 3-c is fixed with the OCD resist 4-c in the trench 1-c on the line defect in the two-dimensional photonic crystal 2-c. The structure of is shown.

By patterning and etching processes using electron beam lithography, a periodic hole having a period of 380 nm and a hole radius of 150 nm is formed on an SOI (Silicon on Insulator) substrate having an upper Si layer thickness of 150 nm to form a photonic crystal substrate. A portion where no hole is formed is left in a part of the periodic structure, and a simple line defect having a line defect width of 0.98 × W 0 (W 0 = 380 × √3 nm) is assumed. By repeating the electron beam lithography and the etching process, a trench pattern having a length of 20 μm, a width of 150 nm, and a depth of 50 nm is formed on the simple line defect.

  InAs-InP nanowires (wire diameter 50 nm, length 3 μm) prepared by metal organic vapor phase epitaxy are dispersed on the photonic crystal substrate, and further embedded in the trench 1-c by AFM manipulation. . After adjusting the position of the nanowire 3-c in the trench 1-c by AFM manipulation, an OCD resist 4-c serving as an adhesive is attached to the nanowire 3-c using DPN lithography, and the nanowire 3-c is attached. It fixes in trench 1-c.

  FIG. 5 shows an emission spectrum representing the intensity with respect to the resonance wavelength in the first embodiment of the present invention. As a result of comparing the transmission spectra of the simple line defect waveguide before and after the nanowire 3-c is embedded, it is confirmed that a resonator is formed on the simple line defect by the embedding of the nanowire 3-c. As a result of comparing the light emission from the nanowire 3-c by the excitation light irradiation from the upper surface of the photonic crystal with the light emission from the nanowire 3-c arranged on the substrate having no photonic crystal structure, the photonic crystal resonator By the coupling with the provided resonance mode, narrowing of the emission spectrum, increase of the emission rate, and increase of the peak intensity are confirmed in FIG.

  FIG. 6 shows two photographs showing the light emission of the light emitting device prepared according to the first embodiment of the present invention. The left side is a top view of the photonic crystal viewed from above, and the right side is a cross-sectional view of the line defect portion of the photonic crystal.

  According to the present invention, a photonic crystal skeleton material can be manufactured using a material that can easily be manufactured, and an arbitrary light-emitting material can be embedded. Thus, a light-emitting element can be easily manufactured.

(Q value tuning / resonance wavelength tuning by fine adjustment of nanowire lateral position)
FIG. 7 shows a second embodiment of the present invention, and shows a configuration of the present invention in which the position where the nanowire 3-d embedded in the trench 1-d is installed is changed.

  Further, using the photonic crystal on the same SOI substrate as in the first embodiment, the nanowire 3-d in which the position where the nanowire 3-d is installed is changed in the width direction of the trench 1-d is the same as described above. The trench 1-d on the simple line defect is buried. When the position of the nanowire 3-d is changed in the width direction of the trench 1-d with respect to the width of 150 nm of the trench 1-d, the Q of the resonator is changed according to the position of the nanowire 3-d as shown in FIG. It is confirmed that the value changes (● mark).

  According to the present invention, a Q value can be changed by controlling the position of the nanowire 3-d using a common photonic crystal substrate with a trench, and a device having desired characteristics can be provided on demand. It becomes possible.

  Further, FIG. 8 shows that the resonance wavelength can be tuned by changing the position where the nanowire 3-d embedded in the trench 1-d is installed in the second embodiment of the present invention (circle mark). As in the case of the Q value tuning described above, according to the present invention, the resonance wavelength can be changed by controlling the position of the nanowire 3-d using a common photonic crystal substrate with a trench. It is possible to provide devices with on-demand.

(Resonance wavelength tuning / Q value tuning by nanowire exchange)
FIG. 9 shows a third embodiment of the present invention, and shows a configuration of the present invention in which nanowires 3-e having different lengths are embedded in trenches 1-e on simple defect lines.

  Using the same photonic crystal substrate (with a trench) as in the first embodiment, nanowires 3-e with different lengths are embedded in trenches 1-e on simple line defects. The structural parameters of the photonic crystal and the nanowire 3-e are as shown in FIGS. As shown by the plot (□) in FIG. 10, it is confirmed that the resonance wavelength has the nanowire length dependency, and nanowires 3-e having different lengths are used by using the same photonic crystal substrate (with a trench). By embedding, it is confirmed that resonators having different resonator wavelengths are formed.

  In addition, when the nanowire 3-e having a different length is embedded in the trench 1-e on the simple line defect with respect to the same photonic crystal substrate (with a trench) as in the first embodiment, a circle in FIG. As shown in the plot of (mark), it is confirmed that the Q value of the resonator has a nanowire length dependency, and nanowires 3-e having different lengths are embedded using the same photonic crystal substrate (with a trench). This confirms that resonators having different Q values were formed.

  According to the present invention, by embedding the nanowire 3-e in the trench 1-e in the photonic crystal structure, the photonic crystal skeleton material is not changed, and the periodic structure manufacturing process requiring accuracy is affected. Thus, it is possible to provide photonic crystal elements having different emission wavelengths and resonator Q values.

(Resonance wavelength tuning and Q value tuning by nanowire embedding depth)
FIG. 12 shows a fourth embodiment of the present invention, and a nanowire 3-f that can move in the trench 1-f in the length direction of the trench 1-f along the slope of the bottom surface of the trench 1-f by AFM manipulation. Indicates.

  A photonic crystal substrate having a simple line defect is manufactured by a process similar to that of the first embodiment. A trench 1-f having a bottom surface as a slope is formed on the simple line defect using a gray scale electron beam exposure technique. The InAs-InP nanowire 3-f is embedded in the trench 1-f by AFM manipulation. The structural parameter of the photonic crystal and the structural parameter of the nanowire 3-f are as shown in FIGS. The nanowire 3-f can move along the slope of the bottom surface of the trench 1-f in the length direction of the trench 1-f in the length direction of the trench 1-f by AFM manipulation, and the embedding depth is changed with the movement. be able to. As shown in FIG. 13, the wavelength of the resonator is measured at each embedding depth, and it is confirmed that the wavelength of the resonator changes according to the embedding depth.

  When one of the nanowires 3-f was selected and the embedding depth was changed by the above-described method, the emission from the nanowires 3-f was evaluated by irradiating excitation light in the same manner as in the first embodiment. Only when embedded in the depth, the emission peak of the nanowire 3-f matches the resonance wavelength of the photonic crystal resonator, confirming that the emission spectrum is narrowed, the peak intensity is increased, and the spontaneous emission rate is increased. To be confirmed.

  According to the present invention, by moving the nanowire 3-f in the trench 1-f having a slope, the emission peak wavelength unique to each nanowire and the resonance wavelength of the resonator formed in the photonic crystal can be easily tuned. It becomes possible to make it.

  In addition, the nanowire 3-f is embedded in the above-described slope-type trench structure, and the inside of the trench 1-f is moved along the slope of the bottom surface of the trench 1-f in the length direction of the trench 1-f by AFM manipulation. When the depth was changed, it was confirmed that the Q value of the resonator was changed according to the embedding depth as shown in FIG.

  According to the present invention, it is possible to easily tune the resonance characteristics of the resonator formed in the photonic crystal by moving the nanowire 3-f in the trench 1-f having a slope.

(Production of coupled resonator)
FIG. 15 shows a fifth embodiment of the present invention, and shows a configuration of the present invention in which ten nanowires 3-g are embedded in a trench 1-g.

  A photonic crystal substrate having a simple line defect is manufactured by the same process as in the first embodiment. Similarly, a trench 1-g having a length of 20 μm is formed on the simple line defect. Ten InAs-InP nanowires 3-g (wire diameter 50 nm, length 2 μm) are embedded in the trench 1-g. While observing the transmission spectrum, the spacing between the nanowires 3-g was changed by AFM manipulation to adjust the coupling constant between the resonators. As a result, a transmission spectrum as shown in FIG. A flat transmission band can be obtained in the region of ˜1564.0 nm. Further, in this sample, when the coupling constant between the resonators is adjusted by changing the interval between the nanowires 3-g by AFM manipulation, the transmission characteristics shown in FIG. Such a transmission spectrum is obtained.

  According to the present invention, after the photonic crystal is manufactured, an appropriate coupling strength can be obtained while observing the transmission spectrum, and a coupled resonator having different transmission characteristics can be manufactured on demand using a common photonic crystal substrate. It becomes possible to do.

(PhC (Photonic Crystal) structure that can easily control the Q value by the nanowire length, and a PhC structure that is stable against fluctuations in the nanowire length)
FIG. 17 shows a sixth embodiment of the present invention, and shows a configuration of the present invention in which nanowires 3-h having different lengths are embedded in trenches 1-h on simple defect lines.

  Furthermore, using the same SOI substrate as in the first embodiment, the PhC structure parameters (PhC period, PhC period hole diameter, PhC slab thickness, trench width, depth, etc.) are changed, and the nanowires 3-h having different lengths are changed. Is embedded in the trench 1-h. By changing the length of the nanowire 3-h under the structural conditions in FIG. 18 and FIG. 19 (marked with ◯ and Δ), it is possible to tune only the Q value in a wide range with almost no change in the resonance wavelength. It is. On the other hand, under the structural conditions shown in FIGS. 18 and 19 (marked with ▽), the resonance wavelength and the Q value are stable even when the length of the nanowire 3-h is changed, and the length of the nanowire 3-h fluctuates. Even so, we find that we can provide certain characteristics.

  As described above, in the resonator formation by embedding the nanowire 3-h, the stability of the Q value is controlled by changing the PhC structure parameter, and the degree of the Q value change due to the length of the nanowire 3-h. Can be controlled.

  The present invention relates to the fabrication of photonic crystal resonators.

1-a, 1-b, 1-c, 1-d, 1-e, 1-f, 1-g, 1-h trenches on line defects 2-a, 2-b, 2-c two-dimensional photo Nick Crystal 3-a, 3-b, 3-c, 3-d, 3-e, 3-f, 3-g, 3-h Nanowire 4 OCD resist

Claims (10)

  1. A method for producing a photonic crystal resonator, comprising:
    In a periodic structure photonic crystal substrate in which a plurality of periodically arranged substantially cylindrical holes are formed in a row, a step of providing a line defect portion in which at least one row of holes does not exist for a part of the periodic structure;
    Providing a concave groove in the longitudinal direction of the line defect portion to enable installation of a substantially rectangular parallelepiped nanowire;
    So as to face in the longitudinal direction of the longitudinal direction the groove of the nanowire, look including the step of placing the nanowire in the groove,
    A method for manufacturing a photonic crystal resonator , wherein the position of the nanowire placed in the groove is adjusted to selectively control the resonance wavelength and Q value of the photonic crystal resonator.
  2.   The groove has a slope whose bottom surface is inclined in the longitudinal direction,
      The selective control of the resonance wavelength and the Q value of the photonic crystal resonator is performed by adjusting the position of the nanowire in the groove and adjusting the depth at which the nanowire is installed. The method for producing a photonic crystal resonator according to claim 1.
  3. A method for producing a photonic crystal resonator, comprising:
    In the periodic structure photonic crystal substrate in which a plurality of periodically arranged substantially cylindrical holes are formed, a step of providing a line defect portion in which at least one row of holes does not exist for a part of the periodic structure;
    Providing a concave groove in the longitudinal direction of the line defect portion to enable installation of a substantially rectangular parallelepiped nanowire;
    Placing the nanowire in the groove such that the longitudinal direction of the nanowire is directed to the longitudinal direction of the groove;
    Including
    The method for manufacturing a photonic crystal resonator, characterized in that it comprises the step of selectively controlling the resonance wavelength and the Q value of I Ri before Symbol resonator length of the nanowire to be installed in the groove.
  4. It said groove to set up a plurality of the nanowires, by changing the distance between each of the nanowires, the method according to claim 1 or 3, characterized in that it comprises the step of controlling the transmission characteristic.
  5. Structural parameters of the photonic crystal substrate (period of the pores of the periodic structure, the diameter of the periodic structure, the slab length, the groove width, depth, etc. of the grooves) while adjusting the more the length of the nanowire 4. The method of claim 3 , comprising controlling the resonant wavelength and Q factor.
  6. In a photonic crystal substrate having a periodic structure in which a plurality of periodically arranged substantially cylindrical holes are formed , a line defect portion in which at least one row of holes does not exist is provided for a part of the periodic structure,
    In the longitudinal direction of the line defect portion, a concave groove is provided that enables installation of a substantially rectangular parallelepiped nanowire,
    The nanowire is installed in the groove so that the longitudinal direction of the nanowire faces the longitudinal direction of the groove ,
    By adjusting the position of the nanowire placed in the groove, the resonant wavelength and Q value of the photonic crystal resonator are selectively controlled,
    A photonic crystal resonator, wherein the nanowire is irradiated with excitation light from an upper surface of the photonic crystal substrate to resonate light having a desired wavelength in the nanowire.
  7.   The groove has a slope whose bottom surface is inclined in the longitudinal direction,
        The selective control of the resonance wavelength and the Q value of the photonic crystal resonator is performed by adjusting the position of the nanowire in the groove and adjusting the depth at which the nanowire is installed. The photonic crystal resonator according to claim 6.
  8. In a photonic crystal substrate having a periodic structure in which a plurality of periodically arranged substantially cylindrical holes are formed, a line defect portion in which at least one row of holes does not exist is provided for a part of the periodic structure,
    In the longitudinal direction of the line defect portion, a concave groove is provided that enables installation of a substantially rectangular parallelepiped nanowire,
    The nanowire is installed in the groove so that the longitudinal direction of the groove is directed to the longitudinal direction of the nanowire,
    Ri by the length of the nanowire to be installed in the groove, the resonance wavelength and the Q value of the resonator is selectively controlled
    The photo from photonic crystals upper surface of the substrate by irradiating the excitation light to the nanowire, full photonic crystal resonator you characterized by resonating the light with a desired wavelength in the nanowire.
  9. 9. The photonic crystal resonator according to claim 6 , wherein a plurality of the nanowires are installed in the groove, and transmission characteristics are controlled by changing a distance between the nanowires.
  10. Structural parameters of the photonic crystal substrate (period of the pores of the periodic structure, the diameter of the periodic structure, the slab length, the groove width, depth, etc. of the grooves) while adjusting the more the length of the nanowire The photonic crystal resonator according to claim 8 , wherein the resonance wavelength and the Q value are controlled.
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