JP4290001B2 - ビームデリバリーを備えたレーザリソグラフィー光源 - Google Patents

ビームデリバリーを備えたレーザリソグラフィー光源 Download PDF

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JP4290001B2
JP4290001B2 JP2003525958A JP2003525958A JP4290001B2 JP 4290001 B2 JP4290001 B2 JP 4290001B2 JP 2003525958 A JP2003525958 A JP 2003525958A JP 2003525958 A JP2003525958 A JP 2003525958A JP 4290001 B2 JP4290001 B2 JP 4290001B2
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laser
delivery unit
pulse
unit according
analysis module
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JP2005502211A (ja
JP2005502211A6 (ja
JP2005502211A5 (enExample
Inventor
ブライアン シー クレン
パラッシュ ピー ダス
スティーヴン エル グローヴ
アレクサンダー アイ エアーショヴ
スコット ティ スミス
シャオジャン ジェイ パン
リチャード エル サンドストローム
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サイマー インコーポレイテッド
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Priority claimed from US09/943,343 external-priority patent/US6567450B2/en
Priority claimed from US10/000,991 external-priority patent/US6795474B2/en
Priority claimed from US10/006,913 external-priority patent/US6535531B1/en
Priority claimed from US10/036,676 external-priority patent/US6882674B2/en
Priority claimed from US10/036,727 external-priority patent/US6865210B2/en
Application filed by サイマー インコーポレイテッド filed Critical サイマー インコーポレイテッド
Publication of JP2005502211A publication Critical patent/JP2005502211A/ja
Publication of JP2005502211A6 publication Critical patent/JP2005502211A6/ja
Publication of JP2005502211A5 publication Critical patent/JP2005502211A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2256—KrF, i.e. krypton fluoride is comprised for lasing around 248 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2258—F2, i.e. molecular fluoride is comprised for lasing around 157 nm

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  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2003525958A 2001-08-29 2002-08-19 ビームデリバリーを備えたレーザリソグラフィー光源 Expired - Lifetime JP4290001B2 (ja)

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Application Number Priority Date Filing Date Title
US09/943,343 2001-08-29
US09/943,343 US6567450B2 (en) 1999-12-10 2001-08-29 Very narrow band, two chamber, high rep rate gas discharge laser system
US10/000,991 2001-11-14
US10/000,991 US6795474B2 (en) 2000-11-17 2001-11-14 Gas discharge laser with improved beam path
US10/006,913 2001-11-29
US10/006,913 US6535531B1 (en) 2001-11-29 2001-11-29 Gas discharge laser with pulse multiplier
US10/036,676 US6882674B2 (en) 1999-12-27 2001-12-21 Four KHz gas discharge laser system
US10/036,676 2001-12-21
US10/036,727 2001-12-21
US10/036,727 US6865210B2 (en) 2001-05-03 2001-12-21 Timing control for two-chamber gas discharge laser system
US10/141,216 US6693939B2 (en) 2001-01-29 2002-05-07 Laser lithography light source with beam delivery
US10/141,216 2002-05-07
PCT/US2002/026400 WO2003021732A1 (en) 2001-08-29 2002-08-19 Laser lithography light source with beam delivery

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US20020191654A1 (en) 2002-12-19
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