JP4286911B2 - プラズマ処理方法及びプラズマ処理システム - Google Patents

プラズマ処理方法及びプラズマ処理システム Download PDF

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Publication number
JP4286911B2
JP4286911B2 JP53697298A JP53697298A JP4286911B2 JP 4286911 B2 JP4286911 B2 JP 4286911B2 JP 53697298 A JP53697298 A JP 53697298A JP 53697298 A JP53697298 A JP 53697298A JP 4286911 B2 JP4286911 B2 JP 4286911B2
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Prior art keywords
radio frequency
power
amplifiers
output
plasma processing
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Japanese (ja)
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JP2001512619A (ja
JP2001512619A5 (enExample
Inventor
ブイ． レンデブ，アナトリ
ジー． グロブ，ゲナディー
エム．，ジュニア ポーター，ロバート
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アドバンスト エナジー インダストリーズ，インコーポレイテッド
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Publication of JP2001512619A5 publication Critical patent/JP2001512619A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Drying Of Semiconductors (AREA)
JP53697298A 1997-02-24 1998-02-24 プラズマ処理方法及びプラズマ処理システム Expired - Fee Related JP4286911B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US80560897A 1997-02-24 1997-02-24
US08/805,608 1997-02-24
PCT/US1998/003564 WO1998037627A1 (en) 1997-02-24 1998-02-24 Series powered, parallel output radio frequency generator

Publications (3)

Publication Number Publication Date
JP2001512619A JP2001512619A (ja) 2001-08-21
JP2001512619A5 JP2001512619A5 (enExample) 2005-10-06
JP4286911B2 true JP4286911B2 (ja) 2009-07-01

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Family Applications (1)

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JP53697298A Expired - Fee Related JP4286911B2 (ja) 1997-02-24 1998-02-24 プラズマ処理方法及びプラズマ処理システム

Country Status (6)

Country Link
US (1) US6384540B1 (enExample)
EP (1) EP0962048B1 (enExample)
JP (1) JP4286911B2 (enExample)
KR (1) KR20000075660A (enExample)
DE (1) DE69815506T2 (enExample)
WO (1) WO1998037627A1 (enExample)

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US6538515B2 (en) 2001-01-19 2003-03-25 Telefonaktiebolaget Lm Ericsson (Publ) Power amplifier and method of operating a power amplifier having multiple output-power modes
GB2376819A (en) * 2001-06-21 2002-12-24 Ericsson Telefon Ab L M Electronic circuit having series connected circuit blocks
US6828859B2 (en) 2001-08-17 2004-12-07 Silicon Laboratories, Inc. Method and apparatus for protecting devices in an RF power amplifier
US6771123B2 (en) * 2002-04-19 2004-08-03 Bose Corporation Multichannel power amplifying
US6894565B1 (en) * 2002-12-03 2005-05-17 Silicon Laboratories, Inc. Fast settling power amplifier regulator
US6897730B2 (en) * 2003-03-04 2005-05-24 Silicon Laboratories Inc. Method and apparatus for controlling the output power of a power amplifier
US7375035B2 (en) * 2003-04-29 2008-05-20 Ronal Systems Corporation Host and ancillary tool interface methodology for distributed processing
US7429714B2 (en) * 2003-06-20 2008-09-30 Ronal Systems Corporation Modular ICP torch assembly
US7243706B2 (en) * 2004-05-28 2007-07-17 Ixys Corporation Heatsink for power devices
JP2006287817A (ja) * 2005-04-04 2006-10-19 Tokyo Electron Ltd マイクロ波発生装置、マイクロ波供給装置、プラズマ処理装置及びマイクロ波発生方法
US7729672B2 (en) * 2006-03-22 2010-06-01 Qualcomm, Incorporated Dynamic bias control in power amplifier
US7777567B2 (en) 2007-01-25 2010-08-17 Mks Instruments, Inc. RF power amplifier stability network
US7755452B2 (en) * 2007-02-27 2010-07-13 Coherent, Inc. Power combiner
US8592966B2 (en) * 2007-06-22 2013-11-26 Cree, Inc. RF transistor packages with internal stability network including intra-capacitor resistors and methods of forming RF transistor packages with internal stability networks including intra-capacitor resistors
US8373508B2 (en) 2008-12-24 2013-02-12 Nxp B.V. Power amplifier
WO2010121968A1 (en) * 2009-04-24 2010-10-28 Osram Gesellschaft mit beschränkter Haftung Amplifier for electrodeless high intensity discharge (ehid) lamps with multiple stages, variable supply voltage, biasing and tuning, ehid-system and method for operating an ehid-system
US7970037B2 (en) * 2009-06-10 2011-06-28 Coherent, Inc. Arrangement for RF power delivery to a gas discharge laser with cascaded transmission line sections
US7965211B1 (en) * 2009-11-09 2011-06-21 Rockwell Collins, Inc. High power DAC power amplifier
US20110285473A1 (en) 2010-05-24 2011-11-24 Coherent, Inc. Impedance-matching transformers for rf driven co2 gas discharge lasers
US8648665B2 (en) 2010-10-06 2014-02-11 Coherent, Inc. Impedance-matching circuits for multi-output power supplies driving CO2 gas-discharge lasers
JP6196299B2 (ja) * 2012-06-12 2017-09-13 ザ リージェンツ オブ ユニバーシティー オブ ミシガン 狭域通信用の超低電力無線機
US20140035588A1 (en) * 2012-08-03 2014-02-06 Schlumberger Technology Corporation Borehole particle accelerator
US9392681B2 (en) 2012-08-03 2016-07-12 Schlumberger Technology Corporation Borehole power amplifier
DE202013012714U1 (de) 2012-12-18 2018-10-15 TRUMPF Hüttinger GmbH + Co. KG Leistungsversorgungssystem mit einem Leistungswandler
EP2936541B1 (de) 2012-12-18 2017-02-01 TRUMPF Hüttinger GmbH + Co. KG Verfahren zur erzeugung einer hochfrequenzleistung und leistungsversorgungssystem mit einem leistungswandler zur versorgung einer last mit leistung
US9130536B2 (en) 2013-07-23 2015-09-08 Tokyo Electron Limited Radio frequency signal splitter and matcher
US10373794B2 (en) 2015-10-29 2019-08-06 Lam Research Corporation Systems and methods for filtering radio frequencies from a signal of a thermocouple and controlling a temperature of an electrode in a plasma chamber
US10043636B2 (en) 2015-12-10 2018-08-07 Lam Research Corporation Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal
US10553465B2 (en) * 2016-07-25 2020-02-04 Lam Research Corporation Control of water bow in multiple stations
US10264663B1 (en) 2017-10-18 2019-04-16 Lam Research Corporation Matchless plasma source for semiconductor wafer fabrication
US10304663B1 (en) * 2018-07-19 2019-05-28 Lam Research Corporation RF generator for generating a modulated frequency or an inter-modulated frequency
DE102019134463B3 (de) 2019-12-16 2021-05-12 TRUMPF Hüttinger GmbH + Co. KG Hochfrequenz-Hochspannungs-Stromleiter-Vorrichtung

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US5306986A (en) 1992-05-20 1994-04-26 Diablo Research Corporation Zero-voltage complementary switching high efficiency class D amplifier
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Also Published As

Publication number Publication date
EP0962048A1 (en) 1999-12-08
JP2001512619A (ja) 2001-08-21
DE69815506T2 (de) 2003-12-11
EP0962048B1 (en) 2003-06-11
KR20000075660A (ko) 2000-12-26
US6384540B1 (en) 2002-05-07
WO1998037627A1 (en) 1998-08-27
DE69815506D1 (de) 2003-07-17

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