KR20000075660A - 직렬전원의 병렬 출력 고주파 발생기 - Google Patents
직렬전원의 병렬 출력 고주파 발생기 Download PDFInfo
- Publication number
- KR20000075660A KR20000075660A KR1019997007726A KR19997007726A KR20000075660A KR 20000075660 A KR20000075660 A KR 20000075660A KR 1019997007726 A KR1019997007726 A KR 1019997007726A KR 19997007726 A KR19997007726 A KR 19997007726A KR 20000075660 A KR20000075660 A KR 20000075660A
- Authority
- KR
- South Korea
- Prior art keywords
- high frequency
- power
- amplifier
- output
- amplifiers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 claims abstract description 114
- 230000008878 coupling Effects 0.000 claims abstract description 46
- 238000010168 coupling process Methods 0.000 claims abstract description 46
- 238000005859 coupling reaction Methods 0.000 claims abstract description 46
- 238000013461 design Methods 0.000 claims abstract description 43
- 238000012545 processing Methods 0.000 claims abstract description 15
- 230000003321 amplification Effects 0.000 claims abstract description 6
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 6
- 239000003990 capacitor Substances 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000002955 isolation Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims 8
- 238000003672 processing method Methods 0.000 claims 3
- 238000000926 separation method Methods 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 230000001737 promoting effect Effects 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 229910000859 α-Fe Inorganic materials 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000007792 addition Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80560897A | 1997-02-24 | 1997-02-24 | |
| US8/805,608 | 1997-02-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20000075660A true KR20000075660A (ko) | 2000-12-26 |
Family
ID=25192023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019997007726A Withdrawn KR20000075660A (ko) | 1997-02-24 | 1998-02-24 | 직렬전원의 병렬 출력 고주파 발생기 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6384540B1 (enExample) |
| EP (1) | EP0962048B1 (enExample) |
| JP (1) | JP4286911B2 (enExample) |
| KR (1) | KR20000075660A (enExample) |
| DE (1) | DE69815506T2 (enExample) |
| WO (1) | WO1998037627A1 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6579805B1 (en) * | 1999-01-05 | 2003-06-17 | Ronal Systems Corp. | In situ chemical generator and method |
| US6917245B2 (en) | 2000-09-12 | 2005-07-12 | Silicon Laboratories, Inc. | Absolute power detector |
| US6549071B1 (en) * | 2000-09-12 | 2003-04-15 | Silicon Laboratories, Inc. | Power amplifier circuitry and method using an inductance coupled to power amplifier switching devices |
| US6856199B2 (en) * | 2000-10-10 | 2005-02-15 | California Institute Of Technology | Reconfigurable distributed active transformers |
| US6538515B2 (en) | 2001-01-19 | 2003-03-25 | Telefonaktiebolaget Lm Ericsson (Publ) | Power amplifier and method of operating a power amplifier having multiple output-power modes |
| GB2376819A (en) * | 2001-06-21 | 2002-12-24 | Ericsson Telefon Ab L M | Electronic circuit having series connected circuit blocks |
| US6828859B2 (en) | 2001-08-17 | 2004-12-07 | Silicon Laboratories, Inc. | Method and apparatus for protecting devices in an RF power amplifier |
| US6771123B2 (en) * | 2002-04-19 | 2004-08-03 | Bose Corporation | Multichannel power amplifying |
| US6894565B1 (en) * | 2002-12-03 | 2005-05-17 | Silicon Laboratories, Inc. | Fast settling power amplifier regulator |
| US6897730B2 (en) * | 2003-03-04 | 2005-05-24 | Silicon Laboratories Inc. | Method and apparatus for controlling the output power of a power amplifier |
| US7375035B2 (en) * | 2003-04-29 | 2008-05-20 | Ronal Systems Corporation | Host and ancillary tool interface methodology for distributed processing |
| US7429714B2 (en) * | 2003-06-20 | 2008-09-30 | Ronal Systems Corporation | Modular ICP torch assembly |
| US7243706B2 (en) * | 2004-05-28 | 2007-07-17 | Ixys Corporation | Heatsink for power devices |
| JP2006287817A (ja) * | 2005-04-04 | 2006-10-19 | Tokyo Electron Ltd | マイクロ波発生装置、マイクロ波供給装置、プラズマ処理装置及びマイクロ波発生方法 |
| US7729672B2 (en) * | 2006-03-22 | 2010-06-01 | Qualcomm, Incorporated | Dynamic bias control in power amplifier |
| US7777567B2 (en) | 2007-01-25 | 2010-08-17 | Mks Instruments, Inc. | RF power amplifier stability network |
| US7755452B2 (en) * | 2007-02-27 | 2010-07-13 | Coherent, Inc. | Power combiner |
| US8592966B2 (en) * | 2007-06-22 | 2013-11-26 | Cree, Inc. | RF transistor packages with internal stability network including intra-capacitor resistors and methods of forming RF transistor packages with internal stability networks including intra-capacitor resistors |
| US8373508B2 (en) | 2008-12-24 | 2013-02-12 | Nxp B.V. | Power amplifier |
| WO2010121968A1 (en) * | 2009-04-24 | 2010-10-28 | Osram Gesellschaft mit beschränkter Haftung | Amplifier for electrodeless high intensity discharge (ehid) lamps with multiple stages, variable supply voltage, biasing and tuning, ehid-system and method for operating an ehid-system |
| US7970037B2 (en) * | 2009-06-10 | 2011-06-28 | Coherent, Inc. | Arrangement for RF power delivery to a gas discharge laser with cascaded transmission line sections |
| US7965211B1 (en) * | 2009-11-09 | 2011-06-21 | Rockwell Collins, Inc. | High power DAC power amplifier |
| US20110285473A1 (en) | 2010-05-24 | 2011-11-24 | Coherent, Inc. | Impedance-matching transformers for rf driven co2 gas discharge lasers |
| US8648665B2 (en) | 2010-10-06 | 2014-02-11 | Coherent, Inc. | Impedance-matching circuits for multi-output power supplies driving CO2 gas-discharge lasers |
| JP6196299B2 (ja) * | 2012-06-12 | 2017-09-13 | ザ リージェンツ オブ ユニバーシティー オブ ミシガン | 狭域通信用の超低電力無線機 |
| US20140035588A1 (en) * | 2012-08-03 | 2014-02-06 | Schlumberger Technology Corporation | Borehole particle accelerator |
| US9392681B2 (en) | 2012-08-03 | 2016-07-12 | Schlumberger Technology Corporation | Borehole power amplifier |
| DE202013012714U1 (de) | 2012-12-18 | 2018-10-15 | TRUMPF Hüttinger GmbH + Co. KG | Leistungsversorgungssystem mit einem Leistungswandler |
| EP2936541B1 (de) | 2012-12-18 | 2017-02-01 | TRUMPF Hüttinger GmbH + Co. KG | Verfahren zur erzeugung einer hochfrequenzleistung und leistungsversorgungssystem mit einem leistungswandler zur versorgung einer last mit leistung |
| US9130536B2 (en) | 2013-07-23 | 2015-09-08 | Tokyo Electron Limited | Radio frequency signal splitter and matcher |
| US10373794B2 (en) | 2015-10-29 | 2019-08-06 | Lam Research Corporation | Systems and methods for filtering radio frequencies from a signal of a thermocouple and controlling a temperature of an electrode in a plasma chamber |
| US10043636B2 (en) | 2015-12-10 | 2018-08-07 | Lam Research Corporation | Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal |
| US10553465B2 (en) * | 2016-07-25 | 2020-02-04 | Lam Research Corporation | Control of water bow in multiple stations |
| US10264663B1 (en) | 2017-10-18 | 2019-04-16 | Lam Research Corporation | Matchless plasma source for semiconductor wafer fabrication |
| US10304663B1 (en) * | 2018-07-19 | 2019-05-28 | Lam Research Corporation | RF generator for generating a modulated frequency or an inter-modulated frequency |
| DE102019134463B3 (de) | 2019-12-16 | 2021-05-12 | TRUMPF Hüttinger GmbH + Co. KG | Hochfrequenz-Hochspannungs-Stromleiter-Vorrichtung |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3445782A (en) | 1966-07-28 | 1969-05-20 | Gen Dynamics Corp | High-power amplifier utilizing hybrid combining circuits |
| US4383203A (en) | 1981-06-29 | 1983-05-10 | Litek International Inc. | Circuit means for efficiently driving an electrodeless discharge lamp |
| US4590436A (en) | 1984-04-27 | 1986-05-20 | Gte Laboratories Incorporated | High voltage, high frequency amplifier circuit |
| US4590437A (en) | 1984-04-27 | 1986-05-20 | Gte Laboratories Incorporated | High frequency amplifier |
| US4631493A (en) * | 1985-03-18 | 1986-12-23 | Eaton Corporation | Circuit for DC biasing |
| US4980810A (en) | 1989-05-25 | 1990-12-25 | Hughes Aircraft Company | VHF DC-DC power supply operating at frequencies greater than 50 MHz |
| US5121084A (en) | 1990-03-29 | 1992-06-09 | Hughes Aircraft Company | Balance and protection for stacked RF amplifiers |
| US5118997A (en) | 1991-08-16 | 1992-06-02 | General Electric Company | Dual feedback control for a high-efficiency class-d power amplifier circuit |
| DE69304522T2 (de) * | 1992-04-16 | 1997-01-23 | Advanced Energy Ind Inc | Stabilisator fuer schalt-mode geleistet radio-frequenz plasma einrichtung |
| US5306986A (en) | 1992-05-20 | 1994-04-26 | Diablo Research Corporation | Zero-voltage complementary switching high efficiency class D amplifier |
| GB2289810A (en) * | 1994-05-20 | 1995-11-29 | Microelectronics Tech Inc | An r.f. switch using transistors as switch and gain elements |
| DE4438463C1 (de) | 1994-10-27 | 1996-02-15 | Fraunhofer Ges Forschung | Verfahren und Schaltung zur bipolaren pulsförmigen Energieeinspeisung in Niederdruckplasmen |
-
1998
- 1998-02-24 US US09/380,002 patent/US6384540B1/en not_active Expired - Lifetime
- 1998-02-24 EP EP98907601A patent/EP0962048B1/en not_active Expired - Lifetime
- 1998-02-24 KR KR1019997007726A patent/KR20000075660A/ko not_active Withdrawn
- 1998-02-24 JP JP53697298A patent/JP4286911B2/ja not_active Expired - Fee Related
- 1998-02-24 WO PCT/US1998/003564 patent/WO1998037627A1/en not_active Ceased
- 1998-02-24 DE DE69815506T patent/DE69815506T2/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0962048A1 (en) | 1999-12-08 |
| JP4286911B2 (ja) | 2009-07-01 |
| JP2001512619A (ja) | 2001-08-21 |
| DE69815506T2 (de) | 2003-12-11 |
| EP0962048B1 (en) | 2003-06-11 |
| US6384540B1 (en) | 2002-05-07 |
| WO1998037627A1 (en) | 1998-08-27 |
| DE69815506D1 (de) | 2003-07-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 19990824 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |