JP4282171B2 - 電気泳動素子 - Google Patents
電気泳動素子 Download PDFInfo
- Publication number
- JP4282171B2 JP4282171B2 JP21657699A JP21657699A JP4282171B2 JP 4282171 B2 JP4282171 B2 JP 4282171B2 JP 21657699 A JP21657699 A JP 21657699A JP 21657699 A JP21657699 A JP 21657699A JP 4282171 B2 JP4282171 B2 JP 4282171B2
- Authority
- JP
- Japan
- Prior art keywords
- flow path
- zeta potential
- electrophoretic element
- separation
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000926 separation method Methods 0.000 claims description 282
- 239000007788 liquid Substances 0.000 claims description 133
- 239000000758 substrate Substances 0.000 claims description 110
- 238000002347 injection Methods 0.000 claims description 79
- 239000007924 injection Substances 0.000 claims description 79
- 238000001962 electrophoresis Methods 0.000 claims description 31
- 229910010272 inorganic material Inorganic materials 0.000 claims description 10
- 239000011147 inorganic material Substances 0.000 claims description 10
- 238000004381 surface treatment Methods 0.000 description 71
- 238000005370 electroosmosis Methods 0.000 description 65
- 239000005388 borosilicate glass Substances 0.000 description 60
- 238000004458 analytical method Methods 0.000 description 55
- 239000003153 chemical reaction reagent Substances 0.000 description 54
- 230000004048 modification Effects 0.000 description 51
- 238000012986 modification Methods 0.000 description 51
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 38
- 230000000694 effects Effects 0.000 description 38
- 238000000034 method Methods 0.000 description 31
- 239000000463 material Substances 0.000 description 29
- 239000000126 substance Substances 0.000 description 24
- 239000012530 fluid Substances 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 239000011521 glass Substances 0.000 description 21
- 239000012756 surface treatment agent Substances 0.000 description 19
- 239000005051 trimethylchlorosilane Substances 0.000 description 19
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 17
- 238000005194 fractionation Methods 0.000 description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 16
- 230000008569 process Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 238000001514 detection method Methods 0.000 description 10
- 239000008151 electrolyte solution Substances 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- 230000009471 action Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 230000005012 migration Effects 0.000 description 8
- 238000013508 migration Methods 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000006087 Silane Coupling Agent Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 230000002572 peristaltic effect Effects 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- HXVPUKPVLPTVCQ-UHFFFAOYSA-N chloro-dimethyl-propylsilane Chemical compound CCC[Si](C)(C)Cl HXVPUKPVLPTVCQ-UHFFFAOYSA-N 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 238000005251 capillar electrophoresis Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 2
- 239000001768 carboxy methyl cellulose Substances 0.000 description 2
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229920001477 hydrophilic polymer Polymers 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 229920002401 polyacrylamide Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Landscapes
- Electrostatic Separation (AREA)
- Automatic Analysis And Handling Materials Therefor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21657699A JP4282171B2 (ja) | 1999-07-30 | 1999-07-30 | 電気泳動素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21657699A JP4282171B2 (ja) | 1999-07-30 | 1999-07-30 | 電気泳動素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001041929A JP2001041929A (ja) | 2001-02-16 |
| JP2001041929A5 JP2001041929A5 (enExample) | 2005-10-13 |
| JP4282171B2 true JP4282171B2 (ja) | 2009-06-17 |
Family
ID=16690590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21657699A Expired - Fee Related JP4282171B2 (ja) | 1999-07-30 | 1999-07-30 | 電気泳動素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4282171B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006308523A (ja) * | 2005-05-02 | 2006-11-09 | Ebara Corp | 電気泳動用マイクロチップのマイクロチャンネル内のコーティング方法および該方法によりコーティングが施された電気泳動用マイクロチップ |
-
1999
- 1999-07-30 JP JP21657699A patent/JP4282171B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001041929A (ja) | 2001-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Turner et al. | Monolithic nanofluid sieving structures for DNA manipulation | |
| US7261824B2 (en) | Method of fabrication of a microfluidic device | |
| US6210986B1 (en) | Microfluidic channel fabrication method | |
| JP3618511B2 (ja) | 微小流路素子 | |
| KR101179411B1 (ko) | 생화학적 분석을 위한 점적 조작용 장치, 상기 장치의 제조방법 및 마이크로 흐름 분석용 시스템 | |
| US6753200B2 (en) | Monolithic nanofluid sieving structures for DNA manipulation | |
| JP5904958B2 (ja) | 半導体マイクロ分析チップ及びその製造方法 | |
| US20070286773A1 (en) | Microfluidic Device | |
| US20040035701A1 (en) | Entropic trapping and sieving of molecules | |
| TW200911375A (en) | A microfluidic chip for and a method of handling fluidic droplets | |
| CN113546698A (zh) | 微纳流控芯片及其制造方法、微纳流控系统 | |
| WO2001069226A1 (en) | Cross channel device for serial sample injection | |
| WO2021147988A1 (zh) | 一种生物芯片及其制作方法 | |
| JP3847414B2 (ja) | 電気泳動装置 | |
| JP4282171B2 (ja) | 電気泳動素子 | |
| US20070039920A1 (en) | Method of fabricating nanochannels and nanochannels thus fabricated | |
| US20050133371A1 (en) | Apparatus and method for Edman degradation on a microfluidic device utilizing an electroosmotic flow pump | |
| TWI404927B (zh) | 具上下相對式電化學感測電極之毛細管電泳晶片結構及其製造方法 | |
| CN216129606U (zh) | 基于固态纳米孔阵列的测序芯片 | |
| Belder et al. | Coating of powder‐blasted channels for high‐performance microchip electrophoresis | |
| EP3792623B1 (en) | Cyclic capillary electrophoresis device | |
| JP2005211708A (ja) | 液液抽出装置 | |
| KR100369309B1 (ko) | 실리콘 기반 위에서 구현된 전기 영동 분리기 | |
| Matzke et al. | Quartz channel fabrication for electrokinetically driven separations | |
| TWI861533B (zh) | 電子裝置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050609 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060728 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20081009 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081021 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081222 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20081222 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090224 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090317 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120327 Year of fee payment: 3 |
|
| LAPS | Cancellation because of no payment of annual fees |