JP4269228B2 - Electric quantity measuring device - Google Patents

Electric quantity measuring device Download PDF

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JP4269228B2
JP4269228B2 JP2004018269A JP2004018269A JP4269228B2 JP 4269228 B2 JP4269228 B2 JP 4269228B2 JP 2004018269 A JP2004018269 A JP 2004018269A JP 2004018269 A JP2004018269 A JP 2004018269A JP 4269228 B2 JP4269228 B2 JP 4269228B2
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吉田　　隆
文人 高橋
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Fuji Electric FA Components and Systems Co Ltd
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Description

この発明は、いわゆる受配電設備に設置して単独、または配線用遮断器，漏電遮断器，設備機器などの機器と組み合わせて使用し電流，電圧，電力，電力量，力率を含む各種電気量を計測する電気量計測装置に関する。   This invention is installed in so-called power distribution facilities and used alone or in combination with devices such as circuit breakers, earth leakage circuit breakers, equipment, and various electric quantities including current, voltage, power, electric energy, and power factor. It is related with the electric quantity measuring device which measures.

図４はこの種の電気量計測装置の従来例を示すブロック図である。
センサ装置部１は３回路分の主回路導体２ａ，２ｂ，２ｃと、この主回路導体２ａ，２ｂ，２ｃをそれぞれ貫通した電流検出手段３ａ，３ｂ，３ｃと、主回路導体２ａ，２ｂ間に接続された電圧検出手段４ａと、主回路導体２ｂ，２ｃ間に接続された電圧検出手段４ｂと、電流検出手段と電圧検出手段のアナログ検出信号を外部接続するためのコネクタ５とから構成される。このセンサ装置部１は主回路導体を持たず電流検出手段のみ、または電圧検出手段のみで構成するか、組み合わせて使用することもある。 FIG. 4 is a block diagram showing a conventional example of this type of electric quantity measuring apparatus.
The sensor device section 1 includes main circuit conductors 2a, 2b and 2c for three circuits, current detection means 3a, 3b and 3c passing through the main circuit conductors 2a, 2b and 2c, and the main circuit conductors 2a and 2b. The connected voltage detecting means 4a, the voltage detecting means 4b connected between the main circuit conductors 2b and 2c, and the current detecting means and the connector 5 for externally connecting the analog detection signal of the voltage detecting means. . The sensor device section 1 does not have a main circuit conductor and may be constituted only by current detection means or voltage detection means, or may be used in combination.

また、センサ装置部１は、コネクタ５と複数の配線を持つケーブル６を介してコネクタ８と接続され、検出信号が計測情報処理装置部７にアナログ信号として送出される。ここで、コネクタ５，８は直接接続するか、端子台で構成されることもある。アナログ信号として入力される電流検出信号および電圧検出信号は増幅回路９ａ．９ｂでそれぞれ所定の倍率で増幅された後、Ａ／Ｄ変換回路１０でディジタル信号に変換される。   The sensor device unit 1 is connected to the connector 8 via the connector 5 and a cable 6 having a plurality of wirings, and a detection signal is sent to the measurement information processing device unit 7 as an analog signal. Here, the connectors 5 and 8 may be directly connected or may be constituted by a terminal block. The current detection signal and the voltage detection signal input as analog signals are amplified by the amplifier circuit 9a. Each signal is amplified at a predetermined magnification in 9b, and then converted into a digital signal by the A / D conversion circuit 10.

演算処理回路１１では、不揮発性メモリ１２に記憶されている増幅回路とＡ／Ｄ変換回路１０の回路誤差に基づいた補正を施して、出力用の電流値，電圧値，電力値，電力量，力率などの諸量を求め、表示部１３に出力する。また、演算処理回路１１は外部操作部１４からの入力に応じて装置の動作設定値を決定し、この設定値を不揮発性メモリ１２に記憶する。ここで、演算処理回路はいわゆるＣＰＵであり、Ａ／Ｄ変換回路１０はこのＣＰＵに内蔵されているものを利用することもできる。   The arithmetic processing circuit 11 performs correction based on the circuit error between the amplifier circuit and the A / D conversion circuit 10 stored in the nonvolatile memory 12, and outputs an output current value, voltage value, power value, power amount, Various quantities such as power factor are obtained and output to the display unit 13. In addition, the arithmetic processing circuit 11 determines an operation setting value of the apparatus in accordance with an input from the external operation unit 14, and stores this setting value in the nonvolatile memory 12. Here, the arithmetic processing circuit is a so-called CPU, and the A / D conversion circuit 10 may be one built in the CPU.

以上のような構成では、センサ装置部の電流検出手段および電圧検出手段の誤差は補正されず、計測演算処理結果の誤差として加算される。一方、計測演算処理結果の誤差を小さくしようとしても、センサ装置部と計測情報処理装置部とは組み合わせて誤差を調整，補正され、その組み合わせを変更することができないため、装置の寿命や故障などにより交換が必要な場合は、交換が装置全体に及ぶなどの不便さがある。   In the configuration as described above, the errors of the current detection means and the voltage detection means of the sensor device section are not corrected but are added as errors of the measurement calculation processing result. On the other hand, even if it is attempted to reduce the error of the measurement calculation processing result, the sensor device unit and the measurement information processing device unit are adjusted and corrected in combination, and the combination cannot be changed. When the replacement is necessary, there is an inconvenience that the replacement covers the entire apparatus.

そこで、回路遮断器と計測表示ユニットとの間ではあるが、その組み合わせを変更可能とし、変更した場合でも誤差の少ない計測を可能にする技術が、例えば特許文献１に開示されている。
特開２００１−２１８３５９号公報（第５−６頁、図１−２） Thus, for example, Patent Document 1 discloses a technique that allows a combination of the circuit breaker and the measurement display unit to be changed, and enables measurement with less error even when the combination is changed.
JP 2001-218359 A (page 5-6, FIG. 1-2)

しかし、上記特許文献１は正確な演算をするために補正値のみを記憶するもので、適用範囲が限定され融通性に乏しいという問題がある。
したがって、この発明の課題は、センサ装置部と計測情報処理装置部とを任意に組み合わせて使用できるようにするとともに、その適用範囲を広げ融通性を持たせることにある。 However, the above-mentioned Patent Document 1 stores only the correction value in order to perform an accurate calculation, and there is a problem that the applicable range is limited and flexibility is poor.
Accordingly, an object of the present invention is to allow a sensor device unit and a measurement information processing device unit to be used in any combination, and to expand the application range and provide flexibility.

センサ装置部と計測情報処理装置部とを任意に組み合わせて構成される電気量計測装置であって、
前記センサ装置部を、３回路分の主回路導体と、この主回路導体に流れる電流を検出する電流検出手段と、各主回路導体間の電圧を検出する電圧検出手段と、前記電流検出手段および電圧検出手段の特性値，型式および装置の設定値を含む情報を記憶する不揮発性メモリとから構成し、
前記計測情報処理装置部を、前記センサ装置部で検出したアナログ量の検出電流および検出電圧を所定のレベルに増幅する増幅回路と、この増幅回路からのアナログ出力信号をディジタル信号に変換するＡ／Ｄ変換回路と、ディジタル変換された信号から電流値，電圧値，電力値，電力量，力率を含む電気諸量を演算する演算処理回路と、前記増幅回路およびＡ／Ｄ変換回路の特性値，型式および装置の設定値を含む情報を記憶する不揮発性メモリと、一時メモリと、表示器と、外部設定手段とから構成し、
前記計測情報処理装置部の外部設定手段により装置の設定値を変更したときは、計測情報処理装置部の不揮発性メモリに記憶されている設定値を変更するとともに、センサ装置部の不揮発性メモリに記憶されている設定値を変更し、
かつ、前記計測情報処理装置部に外部通信手段を付加し、この外部通信手段を介して装置の設定値を変更したときは、計測情報処理装置部の不揮発性メモリに記憶されている設定値を変更するとともに、センサ装置部の不揮発性メモリに記憶されている設定値を変更し、
さらに、前記センサ装置部を交換したときは、前記計測情報処理装置部の不揮発性メモリに記憶されている設定値をセンサ装置部の不揮発性メモリに記憶し、前記計測情報処理装置部を交換したときは、前記センサ装置部の不揮発性メモリに記憶されている設定値を前記計測情報処理装置部の不揮発性メモリに記憶することにより、前記センサ装置部および前記計測情報処理部それぞれの設定値を同値とし、
前記計測情報処理装置部の不揮発性メモリに記憶された設定値に基づき演算処理，出力処理を行なうことを特徴とする。 An electrical quantity measuring device configured by arbitrarily combining a sensor device unit and a measurement information processing device unit,
The sensor device section includes main circuit conductors for three circuits, current detection means for detecting a current flowing through the main circuit conductor, voltage detection means for detecting a voltage between the main circuit conductors, the current detection means, A non-volatile memory for storing information including the characteristic value of the voltage detection means, the model, and the set value of the device;
The measurement information processing unit is configured to amplify an analog amount of detection current and detection voltage detected by the sensor unit to a predetermined level, and to convert an analog output signal from the amplification circuit to a digital signal. A D conversion circuit, an arithmetic processing circuit for calculating electric quantities including a current value, a voltage value, a power value, an electric energy, and a power factor from the digitally converted signal, and characteristic values of the amplification circuit and the A / D conversion circuit , Comprising a nonvolatile memory for storing information including model and device setting values, a temporary memory, a display, and external setting means ,
When the setting value of the apparatus is changed by the external setting means of the measurement information processing apparatus unit, the setting value stored in the non-volatile memory of the measurement information processing apparatus unit is changed and the non-volatile memory of the sensor apparatus unit is also changed. Change the stored setting value,
In addition, when an external communication unit is added to the measurement information processing apparatus unit and the setting value of the apparatus is changed via the external communication unit, the setting value stored in the nonvolatile memory of the measurement information processing apparatus unit is changed. Change the set value stored in the non-volatile memory of the sensor device unit,
Further, when the sensor device unit is replaced, the setting value stored in the nonvolatile memory of the measurement information processing device unit is stored in the nonvolatile memory of the sensor device unit, and the measurement information processing device unit is replaced. When the setting values stored in the nonvolatile memory of the sensor device unit are stored in the nonvolatile memory of the measurement information processing device unit, the setting values of the sensor device unit and the measurement information processing unit are set. Equivalent,
A calculation process and an output process are performed based on a set value stored in a nonvolatile memory of the measurement information processing apparatus unit.

前記センサ装置部と計測情報処理装置部とが配線接続され起動されたときは、センサ装置部の不揮発性メモリに記憶された特性値，型式および装置の設定値を読み出し、計測情報処理装置部の一時メモリに特性値，型式を記憶し、設定値を不揮発性メモリにそれぞれ記憶し、これらの値に基づき計測演算処理と出力処理とを行なうことができる（請求項２の発明）。 When the sensor device unit and the measurement information processing device unit are wired and activated, the characteristic value, model, and device setting value stored in the nonvolatile memory of the sensor device unit are read, and the measurement information processing device unit temporary memory to the characteristic value, and stores the model, to store each setting value in the non-volatile memory, Ru can be performed and an output process and the measurement operation processing based on these values (the invention of claim 2).

この発明によれば、センサ装置部と計測情報処理装置部とを組み合わせ自由に構成し、センサ装置部の補正を可能にして高精度な電気計測を可能にするとともに、センサ装置部か計測情報処理装置部のどちらか一方を交換した場合でも、交換前に設定した装置使用条件に依存する装置固有の設定値を再設定することなく、交換前と同じ条件で使用できるようになる。   According to the present invention, the sensor device unit and the measurement information processing device unit can be freely combined, and the sensor device unit can be corrected to enable high-precision electrical measurement. Even when either one of the device units is replaced, the device can be used under the same conditions as before replacement without resetting the device-specific setting values depending on the device usage conditions set before replacement.

図１はこの発明の実施の形態を示す構成図、図２Ａ〜２Ｅは各場合におけるメモリ保存値の説明図、図３は図１の変形例である。
図１からも明らかなように、図４に示す従来例に対し、センサ装置部１に電流検出手段３ａ，３ｂ，３ｃおよび電圧検出手段４ａ，４ｂの各特性値を記憶する不揮発性メモリ１５を設けるとともに、計測情報処理装置部７に一時メモリ１６を設けた点が特徴である。なお、図３は図１に対し、外部通信回路１７を付加した点が異なっている。 1 is a block diagram showing an embodiment of the present invention, FIGS. 2A to 2E are explanatory diagrams of memory storage values in each case, and FIG. 3 is a modification of FIG.
As is apparent from FIG. 1, in contrast to the conventional example shown in FIG. 4, the sensor device section 1 has a nonvolatile memory 15 for storing the characteristic values of the current detection means 3a, 3b, 3c and the voltage detection means 4a, 4b. In addition to the provision, the temporary memory 16 is provided in the measurement information processing apparatus unit 7. 3 differs from FIG. 1 in that an external communication circuit 17 is added.

一時メモリ１６は図２Ａのように、センサ装置部１の特性値が読み出されて保存され、これにより演算処理回路１１では不揮発性メモリ１２に記憶されている増幅回路９ａ，９ｂとＡ／Ｄ変換回路１０の回路誤差に基づく補正と、センサ装置部１の特性値に基づく補正を施して、出力用の電流値，電圧値，電力値，電力量，力率などの諸量を求め、表示部１３に出力する。また、演算処理回路１１は外部操作部１４からの入力に応じて装置の動作設定値を決定し、図２Ｂのようにこの設定値を不揮発性メモリ１２に記憶すると同時に、センサ装置部１の不揮発性メモリ１５の保存値を書き換えて保存する。なお、図３に示すような外部通信手段１７より設定値が変更される場合は、図２Ｃのようにこの設定値を不揮発性メモリ１２に記憶すると同時に、センサ装置部１の不揮発性メモリ１５の保存値を書き換えて保存する。   As shown in FIG. 2A, the temporary memory 16 reads and stores the characteristic values of the sensor device unit 1, whereby the arithmetic processing circuit 11 and the amplifier circuits 9 a and 9 b stored in the nonvolatile memory 12 and the A / D Correction based on the circuit error of the conversion circuit 10 and correction based on the characteristic value of the sensor device unit 1 are performed to obtain various amounts such as an output current value, voltage value, power value, power amount, and power factor, and display them. To the unit 13. In addition, the arithmetic processing circuit 11 determines an operation setting value of the device in accordance with an input from the external operation unit 14, and stores the setting value in the nonvolatile memory 12 as shown in FIG. The stored value in the memory 15 is rewritten and stored. When the set value is changed by the external communication unit 17 as shown in FIG. 3, the set value is stored in the non-volatile memory 12 as shown in FIG. 2C, and at the same time, the non-volatile memory 15 of the sensor device unit 1 is stored. Rewrite and save the saved value.

ここで、センサ装置部１が寿命等の理由で交換される場合には、図２Ｄのように、新しく接続されるセンサ装置部の不揮発性メモリには設定値が保存されていないので、計測情報処理装置部７の不揮発性メモリ１２に保存されている設定値を採用し、センサ装置部１の不揮発性メモリ１５に書き込み、保存する。
また、計測情報処理装置部７が故障等の理由で交換される場合には、図２Ｅのように計測情報処理装置部の不揮発性メモリには設定値が保存されていないので、センサ装置部１の不揮発性メモリ１５に保存されている設定値を採用し、計測情報処理装置部７の不揮発性メモリ１２に書き込み、保存する。このように、センサ装置部１と計測情報処理装置部７は常に、同値の装置設定値を不揮発性メモリに記憶していることになる。 Here, when the sensor device unit 1 is replaced for reasons such as lifetime, the setting value is not stored in the non-volatile memory of the newly connected sensor device unit as shown in FIG. 2D. The set value stored in the non-volatile memory 12 of the processing device unit 7 is adopted, and is written and stored in the non-volatile memory 15 of the sensor device unit 1.
Further, when the measurement information processing device unit 7 is replaced due to a failure or the like, the setting value is not stored in the nonvolatile memory of the measurement information processing device unit as shown in FIG. The setting value stored in the non-volatile memory 15 is employed, and is written and stored in the non-volatile memory 12 of the measurement information processing apparatus unit 7. Thus, the sensor device unit 1 and the measurement information processing device unit 7 always store the same device setting value in the nonvolatile memory.

この発明の実施の形態を示すブロック図Block diagram showing an embodiment of the present invention 図１における通常動作状態のメモリ保存値の説明図Explanatory drawing of the memory storage value in the normal operation state in FIG. 図１における外部操作設定時のメモリ保存値の説明図Explanatory diagram of memory stored value when external operation is set in FIG. 図１における外部通信設定時のメモリ保存値の説明図Explanatory drawing of the memory storage value at the time of external communication setting in FIG. 図１におけるセンサ装置部交換時のメモリ保存値の説明図Explanatory drawing of the memory storage value at the time of sensor apparatus part replacement | exchange in FIG. 図１における計測情報処理装置部交換時のメモリ保存値の説明図Explanatory drawing of the memory storage value at the time of measurement information processing apparatus part replacement | exchange in FIG. 図１の変形例を示すブロック図The block diagram which shows the modification of FIG. 従来例を示すブロック図Block diagram showing a conventional example

符号の説明Explanation of symbols

１…センサ装置部、２ａ，２ｂ，２ｃ…主回路導体、３ａ，３ｂ，３ｃ…電流検出手段、４ａ，４ｂ…電圧検出手段、５，８…コネクタ、６…ケーブル、７…計測情報処理装置部、９ａ，９ｂ…増幅回路、１０…Ａ／Ｄ変換回路、１１…演算処理回路（ＣＰＵ）、１２，１５…不揮発性メモリ、１３…表示部、１４…外部操作、１６…一時メモリ、１７…外部通信手段。

DESCRIPTION OF SYMBOLS 1 ... Sensor apparatus part, 2a, 2b, 2c ... Main circuit conductor, 3a, 3b, 3c ... Current detection means, 4a, 4b ... Voltage detection means, 5, 8 ... Connector, 6 ... Cable, 7 ... Measurement information processing apparatus 9a, 9b ... amplifier circuit, 10 ... A / D conversion circuit, 11 ... arithmetic processing circuit (CPU), 12, 15 ... nonvolatile memory, 13 ... display unit, 14 ... external operation, 16 ... temporary memory, 17 ... external communication means.

Claims (2)

センサ装置部と計測情報処理装置部とを任意に組み合わせて構成される電気量計測装置であって、
前記センサ装置部を、３回路分の主回路導体と、この主回路導体に流れる電流を検出する電流検出手段と、各主回路導体間の電圧を検出する電圧検出手段と、前記電流検出手段および電圧検出手段の特性値，型式および装置の設定値を含む情報を記憶する不揮発性メモリとから構成し、
前記計測情報処理装置部を、前記センサ装置部で検出したアナログ量の検出電流および検出電圧を所定のレベルに増幅する増幅回路と、この増幅回路からのアナログ出力信号をディジタル信号に変換するＡ／Ｄ変換回路と、ディジタル変換された信号から電流値，電圧値，電力値，電力量，力率を含む電気諸量を演算する演算処理回路と、前記増幅回路およびＡ／Ｄ変換回路の特性値，型式および装置の設定値を含む情報を記憶する不揮発性メモリと、一時メモリと、表示器と、外部設定手段とから構成し、
前記計測情報処理装置部の外部設定手段により装置の設定値を変更したときは、計測情報処理装置部の不揮発性メモリに記憶されている設定値を変更するとともに、センサ装置部の不揮発性メモリに記憶されている設定値を変更し、
かつ、前記計測情報処理装置部に外部通信手段を付加し、この外部通信手段を介して装置の設定値を変更したときは、計測情報処理装置部の不揮発性メモリに記憶されている設定値を変更するとともに、センサ装置部の不揮発性メモリに記憶されている設定値を変更し、
さらに、前記センサ装置部を交換したときは、前記計測情報処理装置部の不揮発性メモリに記憶されている設定値をセンサ装置部の不揮発性メモリに記憶し、前記計測情報処理装置部を交換したときは、前記センサ装置部の不揮発性メモリに記憶されている設定値を前記計測情報処理装置部の不揮発性メモリに記憶することにより、前記センサ装置部および前記計測情報処理部それぞれの設定値を同値とし、
前記計測情報処理装置部の不揮発性メモリに記憶された設定値に基づき演算処理，出力処理を行なう電気量計測装置。 An electrical quantity measuring device configured by arbitrarily combining a sensor device unit and a measurement information processing device unit,
The sensor device section includes main circuit conductors for three circuits, current detection means for detecting a current flowing through the main circuit conductor, voltage detection means for detecting a voltage between the main circuit conductors, the current detection means, A non-volatile memory for storing information including the characteristic value of the voltage detection means, the model, and the set value of the device;
The measurement information processing unit is configured to amplify an analog amount of detection current and detection voltage detected by the sensor unit to a predetermined level, and to convert an analog output signal from the amplification circuit to a digital signal. A D conversion circuit, an arithmetic processing circuit for calculating electric quantities including a current value, a voltage value, a power value, an electric energy, and a power factor from the digitally converted signal, and characteristic values of the amplification circuit and the A / D conversion circuit , Comprising a nonvolatile memory for storing information including model and device setting values, a temporary memory, a display, and external setting means ,
When the setting value of the apparatus is changed by the external setting means of the measurement information processing apparatus unit, the setting value stored in the non-volatile memory of the measurement information processing apparatus unit is changed and the non-volatile memory of the sensor apparatus unit is also changed. Change the stored setting value,
In addition, when an external communication unit is added to the measurement information processing apparatus unit and the setting value of the apparatus is changed via the external communication unit, the setting value stored in the nonvolatile memory of the measurement information processing apparatus unit is changed. Change the set value stored in the non-volatile memory of the sensor device unit,
Further, when the sensor device unit is replaced, the setting value stored in the nonvolatile memory of the measurement information processing device unit is stored in the nonvolatile memory of the sensor device unit, and the measurement information processing device unit is replaced. When the setting values stored in the nonvolatile memory of the sensor device unit are stored in the nonvolatile memory of the measurement information processing device unit, the setting values of the sensor device unit and the measurement information processing unit are set. Equivalent,
An electrical quantity measuring device that performs arithmetic processing and output processing based on a set value stored in a nonvolatile memory of the measurement information processing device section. 前記センサ装置部と計測情報処理装置部とが配線接続され起動されたときは、センサ装置部の不揮発性メモリに記憶された特性値，型式および装置の設定値を読み出し、計測情報処理装置部の一時メモリに特性値，型式を記憶し、設定値を不揮発性メモリにそれぞれ記憶し、これらの値に基づき計測演算処理と出力処理とを行なうことを特徴とする請求項１に記載の電気量計測装置。   When the sensor device unit and the measurement information processing device unit are wired and activated, the characteristic value, model, and device setting value stored in the nonvolatile memory of the sensor device unit are read, and the measurement information processing device unit The electrical quantity measurement according to claim 1, wherein a characteristic value and a model are stored in a temporary memory, a set value is stored in a nonvolatile memory, and a measurement calculation process and an output process are performed based on these values. apparatus.
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