JP4234851B2 - Deposition equipment - Google Patents

Deposition equipment Download PDF

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Publication number
JP4234851B2
JP4234851B2 JP17543099A JP17543099A JP4234851B2 JP 4234851 B2 JP4234851 B2 JP 4234851B2 JP 17543099 A JP17543099 A JP 17543099A JP 17543099 A JP17543099 A JP 17543099A JP 4234851 B2 JP4234851 B2 JP 4234851B2
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Japan
Prior art keywords
film forming
film
wall plate
exhaust passage
forming furnace
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JP17543099A
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Japanese (ja)
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JP2001007096A (en
Inventor
広行 神田
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Nippon Soda Co Ltd
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Nippon Soda Co Ltd
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Description

【0001】
【発明の属する技術分野】
本発明は、CVD法(化学的気相成膜法)により基板に膜を形成する成膜装置に関し、特に、ガラス基板等にSiO2 膜、ITO膜(透明導電膜)、SnO2 膜(ATO,FTO)等を形成する成膜装置に関する。
【0002】
【従来の技術】
電卓、時計、タイマー等の表示部、あるいは、デジタルカメラ等の液晶表示部又はコンピュータに接続された入力用のタッチパネル等として用いられるITOガラス基板の製造に際しては、洗浄装置、選別装置、搬送装置、成膜装置等により構成される製造ラインが用いられている。
【0003】
この製造ラインでの成膜装置における膜形成手法は、気相状態にある原料薬剤の有効成分と固体との接触による反応を利用しているため、膜となり得る有効成分が回り込める領域であれば、あらゆる固体に対して膜が形成され、その結果、ガラス基板のみならず、成膜炉の内壁面等にも膜が形成されることになる。
そして、これらの膜がある膜厚を超えて形成されると剥離し始め、剥離片すなわちゴミとなってガラス基板上に落下し、製品の欠陥を招くことになる。
【0004】
したがって、上記のような欠陥が生じないように、定期的に成膜装置を解体して、その成膜炉の内壁面等に付着した膜を剥離させて除去する清掃作業を行なっていた。
【0005】
【発明が解決しようとする課題】
しかしながら、このような清掃作業は、膜が付着した成膜炉等の内壁面に対して、圧縮空気により砂等の研磨材を吹き付けて膜を剥離させるものである、それ故に、隅々まで膜を除去するのが困難であり、又、成膜炉の内部が研磨材である砂及び膜の剥離片等の飛散により全域に渡って汚れ、さらに、剥離処理の後洗浄を行なう必要があり、全体として、この清掃作業に長時間を要していた。
また、この清掃作業中は、粉塵、埃等が発生するため、一つのラインを清掃していても他のラインでの成膜処理を中断しなければならず、生産性が低下するという問題があった。
【0006】
本発明は、上記従来技術の問題点に鑑みて成されたものであり、その目的とするところは、ピンホール等の欠陥を生じることなく、歩留りの向上を図れると共に清掃作業等に要する時間を短縮して生産性の向上を図れる成膜装置を提供することにある。
【0007】
【課題を解決するための手段】
本発明者は、上記の目的を達成するべく鋭意検討を重ねた結果、以下の如き構成をなす発明を見出すに至った。
すなわち、本発明の成膜装置は、基板を収容する空間を画定する成膜炉の内部に膜の原料を供給し、化学的気相成膜法により基板の表面に膜を生成する成膜装置であって、上記成膜炉の内壁面に対して着脱自在に配置された内壁板を有する、ことを特徴としている。
この構成によれば、成膜炉内において、膜となり得る気相状態の有効成分が、成膜炉の内壁面とは別個に設けられた内壁板の表面に付着する。したがって、成膜炉内の清掃作業の際には、この内壁板を取り外して清掃しあるいは新たな内壁板と交換するだけで、付着した不要な膜が除去される。
【0008】
上記構成において、基板を連続的に所定方向に搬送する搬送手段を有し、成膜炉が、この搬送手段の一部及び搬送手段に載置された基板を覆う空間を画定するように形成された構成を採用することができる。
この構成によれば、搬送手段に載置された複数の基板に対して連続的に成膜を行なう成膜炉内において、膜となり得る気相状態の有効成分が、成膜炉の内壁面とは別個に設けられた内壁板の表面に付着した際に、この内壁板を取り外して清掃し又は新たな内壁板と交換するだけで、付着した不要な膜が除去される。
【0009】
上記構成において、成膜炉には、膜の原料を供給する原料供給通路及び成膜炉の内部を排気する排気通路が接続されており、内壁板が、少なくとも排気通路が接続された領域に配置された構成を採用することができる。
この構成によれば、内壁板が、膜が付着し易い排気通路の領域に配置されていることから、この領域に配置された内壁板を取り外して清掃あるいは新たな内壁板と交換するだけで、付着した不要な膜が効率良く除去される。
【0010】
上記構成において、内壁板が、排気通路の内壁面の少なくと一部の領域にも配置された構成を採用することができる。
この構成によれば、内壁板が、膜が付着し易い排気通路の内部領域にも配置されていることから、この領域に配置された内壁板を取り外して清掃あるいは新たな内壁板と交換するだけで、付着した不要な膜が効率良く除去され、又、排気通路の詰まり等が防止される。
【0011】
上記構成において、排気通路の内壁面の少なくとも一部の領域に対して、着脱自在に配置された第2内壁板を有し、内壁板が、この第2内壁板により吊り下げられて成膜炉の内壁面に固定された構成を採用することができる。
この構成によれば、内壁板が、膜が付着し易い排気通路の内部領域に配置されていることから、この領域に配置された内壁板を取り外して清掃あるいは新たな内壁板と交換するだけで、付着した不要な膜が効率良く除去され、又、排気通路の詰まり等が防止される。また、成膜炉内に配置された内壁板が排気通路内に配置された第2内壁板により吊り下げられて固定されていることから、第2内壁板を取り外すことで、成膜炉内に配置された内壁板は容易に取り外される。
【0012】
【発明の実施の形態】
以下、本発明の実施の形態について、添付図面に基づき説明する。
図1ないし図6は、本発明に係る成膜装置を示した概略構成図及び成膜装置の一部を拡大して示した拡大図である。
【0013】
この実施形態に係る成膜装置は、電卓、時計、タイマー、デジタルカメラ等の液晶ディスプレイ、エレクトロルミネッセンスディスプレイ、面発熱体、コンピュータに接続された入力用のタッチパネル等として用いられるITOガラス基板を製造するものである。
【0014】
この成膜装置は、常圧CVD法の一種であるパイロゾル成膜法を用いたものであり、この成膜工程では、ガラス基板を一枚一枚搬送させつつ約500°C程度に予め加熱し、この加熱されたガラス基板上にSiO2 膜及びITO膜を順次に積層する。続いて、これらの膜が形成されたガラス基板、すなわち、ITOガラス基板を室温まで冷却する。
【0015】
この成膜装置は、図1に示すように、ガラス基板を載置した状態で連続的に一方向に搬送する搬送手段としてのベルトコンベア50と、このベルトコンベア50の一部及びベルトコンベアに載置されたガラス基板を覆う空間を画定する成膜炉、すなわち、SiO2 膜又はITO膜を形成する複数の成膜炉60と、これら成膜炉60の内部に膜の原料を供給する原料供給通路61と、成膜炉60の内部を排気する排気通路62等を備えている。
【0016】
そして、この成膜炉60は、図1に示すように、ベルトコンベア50の上面を包囲すると共に成膜空間を画定するマッフル本体63を有し、このマッフル本体63は、水平方向に伸長すると共にガラス基板を載置したベルトコンベア50を囲繞する略矩形断面の搬送通路部63aと、この搬送通路部63aの上側の壁面から上方に突出すると共に略矩形断面をなすチャンバ部63bと、ガラス基板の搬送方向においてこのチャンバ部63bを挟むように配置され搬送通路部63aの上側の壁面から上方に突出すると共に略矩形断面をなす排気通路部63cとにより形成されている。この排気通路部63cは、この上端のフランジ部63c’に接続される排気通路62と共に一つの排気通路を形成している。また、上記チャンバ部63bには、図1に示すように、SiO2 膜又はITO膜を形成する際の原料を霧化して供給する原料供給通路61が接続されている。
【0017】
上記成膜炉60の排気通路62が接続された領域、すなわち、マッフル本体63の搬送通路部63aから排気通路部63cが突出する領域でかつ搬送通路部63aの上側内壁面の領域には、図1に示すように、この内壁面に対して着脱自在に内壁板70が配置されている。また、排気通路部63cの内壁面には、図1に示すように、この内壁面に対して着脱自在に第2内壁板71が配置されている。
【0018】
内壁板70は、図2に示すように、略矩形形状の上板部70aと、この上板部70aの両端縁から下方に伸長した略三角形をなす側板部70bと、上板部70aの略中央部において排気通路部63cの断面よりも少し大きめに開口された開口部70cとにより形成されており、上板部70aと側板部70bとの接続部は湾曲するように角Rを設けて成形されている。
そして、この内壁板70は、図3に示すように、その上板部70a及び側板部70bが、搬送通路部63aの上側内壁面及び内側壁面に沿ってこれらの内壁面を覆うように、すなわち、ベルトコンベア50に載置されたガラス基板Wの上方領域に位置付けられるように、搬送通路部63aの内部に配置される。
尚、内壁板70の材料としては、ステンレス材料等の耐熱性を有するものを用いることができ、好ましくは板厚約1.0mm程度で熱膨張率の小さいSUS310S材等を用いることができる。
【0019】
第2内壁板71は、図4に示すように、略矩形形状の側板部71aと、この側板部71aの上端から水平方向に伸長する係止板部71bと、側板部71aの下端から水平方向略斜め上向きに伸長する支持板部71cとにより形成されており、それぞれの排気通路部63cに対して一対設定されている。
そして、この第2内壁板71は、図5に示すように、支持板部71cが搬送通路部63a内に位置付けられ、かつ、側板部71aが排気通路部63cの主たる内壁面に沿ってこの内壁面を覆うように配置される。そして、係止板部71bを排気通路部63cのフランジ部63c’に係止させた状態で、排気通路部63cの内部に固定される。このように、第2内壁板71は、その係止板部71bをフランジ部63c’に係止させることにより固定されるため、その着脱作業を容易に行なうことができる。
尚、第2内壁板71の材料としては、ステンレス材料等の耐熱性を有するものを用いることができ、好ましくは板厚約0.5mm程度で熱膨張率の小さいSUS310S材等を用いることができる。
【0020】
上記内壁板70を取付ける場合は、搬送通路部63a内に内壁板70を挿入した状態で、排気通路部63cから第2内壁板71を挿入し、図5に示すように、第2内壁板71の支持板部71cが、内壁板70の開口部70cを通り抜けて開口部70cの縁部領域を下側から支え、搬送通路部63aの上側内壁面との間で挟持するようにして取付けられる。このように、内壁板70は、第2内壁板71の支持板部71cにより吊り下げられた状態で固定されるため、その着脱作業を容易に行なうことができ、又、その取付け治具等が不要なため構造を簡略化することができる。
【0021】
上記のような内壁板70及び第2内壁板71を設けた成膜炉60では、排気通路が接続された領域すなわち膜の付着を生じ易い領域において、膜となり得る気相状態の有効成分が、これらの内壁板70及び第2内壁板71の表面に付着する。したがって、成膜炉60内の清掃作業の際には、この内壁板70及び第2内壁板71を取り外して清掃しあるいは新たな内壁板及び第2内壁板と交換するだけで、付着した膜を除去することができる。これにより、清掃作業の簡略化、清掃時間の短縮化を行なうことができる。
【0022】
上記実施形態においては、成膜炉内において膜を付着させる内壁板を、付着を生じ易い排気通路接続領域に設けたが、この領域に限るものではなく、その他の領域に配置することも可能である。すなわち、成膜装置40の中において、特に膜の付着を生じ易い領域に設けることで、効率良く膜の除去作業を行なうことができる。
また、上記実施形態においては、連続的に成膜を行なう成膜装置において内壁板を設ける構成を示したが、これに限るものではなく、ガラス基板一枚ずつ処理する枚葉式の成膜装置等においても、本発明に係る内壁板を適用することができる。
【0023】
【発明の効果】
以上述べたように、本発明の成膜装置によれば、化学的気相成膜法により基板の表面に膜を生成する成膜炉の内壁面に対して、着脱自在な内壁板を設けたことにより、成膜炉内において、膜となり得る気相状態の有効成分が、この内壁板の表面に付着する。したがって、成膜炉内の清掃作業の際には、この内壁板を取り外して清掃しあるいは新たな内壁板と交換するだけで、容易に付着した膜を取り除くことができ、清掃作業の簡略化及び清掃時間の短縮化を行なうことができ、又、ピンホール等の欠陥のない成膜ガラス基板を高い歩留りで安定して生産することができる。これにより、生産性を向上させることができる。
また、内壁板を膜が付着し易い排気通路の接続領域に配置することにより、効率良く付着した膜の除去作業を行なうことができる。
【0024】
さらに、排気通路の内壁面の少なくとも一部の領域に対して、着脱自在に第2内壁板を配置し、上記内壁板がこの第2内壁板により吊り下げられて成膜炉の内壁面に固定されるようにすることにより、第2内壁板を取り外すことで、成膜炉内に配置された内壁板の取り外しを行なうことができる。これにより、解体作業を容易に行なうことができ、清掃作業の容易化及び清掃時間の短縮化を行なうことができる。
【図面の簡単な説明】
【図1】本発明に係る成膜装置のうちSiO2 膜又はITO膜を生成する成膜炉の概略構成を示す断面図である。
【図2】成膜炉内に設けられる内壁板を示す斜視図である。
【図3】図2に示す内壁板を成膜炉の内部に配置した状態を示す断面図である。
【図4】成膜炉の排気通路部内に設けられる第2内壁板を示す斜視図である。
【図5】図4に示す第2内壁板及び図2に示す内壁板を組付けた状態を示す断面図である。
【符号の説明】
40・・・成膜装置
50・・・ベルトコンベア(搬送手段)
60・・・第1成膜炉
61・・・原料供給通路
62・・・排気通路
63・・・マッフル本体
63a・・・搬送通路部
63b・・・チャンバ部
63c・・・排気通路部(排気通路)
70・・・内壁板
70a・・・上板部
70b・・・側板部
70c・・・開口部
71・・・第2内壁板
71a・・・側板部
71b・・・係止板部
71c・・・支持板部
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a film forming apparatus for forming a film on a substrate by a CVD method (chemical vapor deposition method), and in particular, a SiO 2 film, ITO film (transparent conductive film), SnO 2 film (ATO) on a glass substrate or the like. , FTO) and the like.
[0002]
[Prior art]
When manufacturing an ITO glass substrate used as a display unit such as a calculator, a clock, a timer, or a liquid crystal display unit such as a digital camera or an input touch panel connected to a computer, a cleaning device, a sorting device, a transport device, A production line composed of a film forming apparatus or the like is used.
[0003]
Since the film formation method in the film forming apparatus in this production line uses a reaction between the active ingredient of the raw material drug in the gas phase and contact with the solid, it is an area where the active ingredient that can become a film can wrap around. A film is formed on all solids, and as a result, a film is formed not only on the glass substrate but also on the inner wall surface of the film forming furnace.
When these films are formed beyond a certain film thickness, they start to peel off and become peeled pieces, that is, dust, fall on the glass substrate, leading to product defects.
[0004]
Therefore, in order to prevent the above-described defects from occurring, the film forming apparatus is periodically disassembled, and a cleaning operation is performed to remove and remove the film attached to the inner wall surface of the film forming furnace.
[0005]
[Problems to be solved by the invention]
However, such a cleaning operation is to blow abrasives such as sand with compressed air on the inner wall surface of a film forming furnace or the like to which the film has adhered, and thus peel off the film to every corner. It is difficult to remove, and the inside of the film forming furnace is contaminated over the entire area due to scattering of sand as a polishing material and film peeling pieces, and further, it is necessary to perform cleaning after the peeling process, Overall, this cleaning operation took a long time.
In addition, during this cleaning operation, dust, dust, etc. are generated, so even if one line is cleaned, the film forming process on the other line must be interrupted, resulting in a decrease in productivity. there were.
[0006]
The present invention has been made in view of the above-described problems of the prior art, and the object of the present invention is to improve the yield without causing defects such as pinholes and to reduce the time required for cleaning work and the like. An object of the present invention is to provide a film forming apparatus that can be shortened to improve productivity.
[0007]
[Means for Solving the Problems]
As a result of intensive studies to achieve the above object, the present inventor has found an invention having the following configuration.
That is, the film forming apparatus of the present invention supplies a film raw material into a film forming furnace that defines a space for accommodating a substrate, and generates a film on the surface of the substrate by a chemical vapor deposition method. And it has the inner wall board arrange | positioned so that attachment or detachment is possible with respect to the inner wall surface of the said film-forming furnace, It is characterized by the above-mentioned.
According to this configuration, in the film forming furnace, the effective component in a gas phase that can be a film adheres to the surface of the inner wall plate provided separately from the inner wall surface of the film forming furnace. Therefore, when the inside of the film forming furnace is cleaned, the attached unnecessary film is removed simply by removing and cleaning the inner wall plate or replacing it with a new inner wall plate.
[0008]
In the above-described configuration, the substrate has a conveying unit that continuously conveys the substrate in a predetermined direction, and the film forming furnace is formed so as to define a space that covers a part of the conveying unit and the substrate placed on the conveying unit. Can be adopted.
According to this configuration, in the film forming furnace that continuously forms a film on a plurality of substrates placed on the transfer means, the effective component in the vapor phase that can be a film is separated from the inner wall surface of the film forming furnace. Is attached to the surface of the separately provided inner wall plate, the attached unnecessary film is removed simply by removing the inner wall plate and cleaning or replacing it with a new inner wall plate.
[0009]
In the above configuration, the film forming furnace is connected to the raw material supply passage for supplying the raw material of the film and the exhaust passage for exhausting the inside of the film forming furnace, and the inner wall plate is disposed at least in the region where the exhaust passage is connected. It is possible to adopt the configuration as described above.
According to this configuration, since the inner wall plate is disposed in the region of the exhaust passage where the film easily adheres, the inner wall plate disposed in this region can be removed and cleaned or replaced with a new inner wall plate. Adhering unnecessary film is efficiently removed.
[0010]
In the above configuration, it is possible to employ a configuration in which the inner wall plate is disposed in at least a part of the inner wall surface of the exhaust passage.
According to this configuration, since the inner wall plate is also disposed in the inner region of the exhaust passage where the film easily adheres, only the inner wall plate disposed in this region is removed and cleaned or replaced with a new inner wall plate. Therefore, the adhering unnecessary film is efficiently removed, and clogging of the exhaust passage is prevented.
[0011]
In the above configuration, the second inner wall plate is detachably disposed with respect to at least a part of the inner wall surface of the exhaust passage, and the inner wall plate is suspended by the second inner wall plate to form a film forming furnace. The structure fixed to the inner wall surface of can be employ | adopted.
According to this configuration, since the inner wall plate is disposed in the inner region of the exhaust passage where the film easily adheres, the inner wall plate disposed in this region can be removed and cleaned or replaced with a new inner wall plate. Adhering unnecessary films are efficiently removed, and clogging of the exhaust passage is prevented. In addition, since the inner wall plate arranged in the film forming furnace is suspended and fixed by the second inner wall plate arranged in the exhaust passage, the second inner wall plate is removed, so that The arranged inner wall board is easily removed.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
1 to 6 are a schematic configuration diagram showing a film forming apparatus according to the present invention and an enlarged view showing a part of the film forming apparatus in an enlarged manner.
[0013]
The film forming apparatus according to this embodiment manufactures an ITO glass substrate used as a liquid crystal display such as a calculator, a clock, a timer, a digital camera, an electroluminescence display, a surface heating element, an input touch panel connected to a computer, and the like. Is.
[0014]
This film forming apparatus uses a pyrosol film forming method, which is a kind of atmospheric pressure CVD method. In this film forming process, the glass substrate is preheated to about 500 ° C. while being conveyed one by one. Then, an SiO 2 film and an ITO film are sequentially laminated on the heated glass substrate. Subsequently, the glass substrate on which these films are formed, that is, the ITO glass substrate is cooled to room temperature.
[0015]
As shown in FIG. 1, this film forming apparatus is mounted on a belt conveyor 50 as a conveying means for continuously conveying in one direction with a glass substrate placed thereon, a part of the belt conveyor 50 and a belt conveyor. A film forming furnace for defining a space covering the placed glass substrate, that is, a plurality of film forming furnaces 60 for forming an SiO 2 film or an ITO film, and a raw material supply for supplying film raw materials into the film forming furnace 60 A passage 61 and an exhaust passage 62 for exhausting the inside of the film forming furnace 60 are provided.
[0016]
As shown in FIG. 1, the film forming furnace 60 includes a muffle main body 63 that surrounds the upper surface of the belt conveyor 50 and demarcates a film forming space. The muffle main body 63 extends in the horizontal direction. A conveyance passage portion 63a having a substantially rectangular cross section surrounding the belt conveyor 50 on which the glass substrate is placed, a chamber portion 63b projecting upward from the upper wall surface of the conveyance passage portion 63a and having a substantially rectangular cross section, The exhaust passage portion 63c is disposed so as to sandwich the chamber portion 63b in the transport direction and protrudes upward from the upper wall surface of the transport passage portion 63a and has a substantially rectangular cross section. The exhaust passage portion 63c forms one exhaust passage together with the exhaust passage 62 connected to the upper flange portion 63c ′. Further, as shown in FIG. 1, a raw material supply passage 61 for atomizing and supplying the raw material for forming the SiO 2 film or the ITO film is connected to the chamber portion 63b.
[0017]
The region where the exhaust passage 62 of the film forming furnace 60 is connected, that is, the region where the exhaust passage portion 63c protrudes from the transport passage portion 63a of the muffle body 63 and the region of the upper inner wall surface of the transport passage portion 63a is shown in FIG. As shown in FIG. 1, an inner wall plate 70 is detachably attached to the inner wall surface. Moreover, as shown in FIG. 1, the 2nd inner wall board 71 is arrange | positioned at the inner wall surface of the exhaust passage part 63c so that attachment or detachment with respect to this inner wall surface is possible.
[0018]
As shown in FIG. 2, the inner wall plate 70 includes a substantially rectangular upper plate portion 70a, a side plate portion 70b having a substantially triangular shape extending downward from both end edges of the upper plate portion 70a, and an abbreviation of the upper plate portion 70a. The central portion is formed by an opening 70c that is opened slightly larger than the cross section of the exhaust passage portion 63c, and the connecting portion between the upper plate portion 70a and the side plate portion 70b is provided with an angle R so as to be curved. Has been.
As shown in FIG. 3, the inner wall plate 70 is formed so that the upper plate portion 70a and the side plate portion 70b cover these inner wall surfaces along the upper inner wall surface and the inner wall surface of the transport passage portion 63a, that is, In addition, it is arranged inside the transport passage portion 63a so as to be positioned in the upper region of the glass substrate W placed on the belt conveyor 50.
As the material of the inner wall plate 70, a heat-resistant material such as a stainless material can be used, and preferably a SUS310S material having a plate thickness of about 1.0 mm and a small thermal expansion coefficient can be used.
[0019]
As shown in FIG. 4, the second inner wall plate 71 includes a substantially rectangular side plate portion 71a, a locking plate portion 71b extending in the horizontal direction from the upper end of the side plate portion 71a, and a horizontal direction from the lower end of the side plate portion 71a. A pair of support plate portions 71c extending substantially obliquely upward is provided, and a pair is set for each exhaust passage portion 63c.
As shown in FIG. 5, the second inner wall plate 71 has the support plate portion 71c positioned in the transport passage portion 63a and the side plate portion 71a along the main inner wall surface of the exhaust passage portion 63c. It arrange | positions so that a wall surface may be covered. And it fixes to the inside of the exhaust_gas | exhaustion channel | path part 63c in the state which latched the latching plate part 71b to the flange part 63c 'of the exhaust_gas | exhaustion channel part 63c. Thus, since the 2nd inner wall board 71 is fixed by making the latching board part 71b latch to flange part 63c ', the attachment or detachment work can be performed easily.
As the material of the second inner wall plate 71, a heat-resistant material such as a stainless material can be used, and preferably a SUS310S material having a plate thickness of about 0.5 mm and a small thermal expansion coefficient can be used. .
[0020]
When the inner wall plate 70 is attached, the second inner wall plate 71 is inserted from the exhaust passage portion 63c with the inner wall plate 70 inserted into the transfer passage portion 63a, and as shown in FIG. The support plate portion 71c passes through the opening portion 70c of the inner wall plate 70, supports the edge region of the opening portion 70c from below, and is attached so as to be sandwiched between the upper inner wall surface of the transfer passage portion 63a. Thus, since the inner wall plate 70 is fixed in a state of being suspended by the support plate portion 71c of the second inner wall plate 71, it can be easily attached and detached, and its mounting jig or the like can be used. Since it is unnecessary, the structure can be simplified.
[0021]
In the film forming furnace 60 provided with the inner wall plate 70 and the second inner wall plate 71 as described above, in a region where the exhaust passage is connected, i.e., a region where film adhesion is likely to occur, an effective component in a gas phase state that can be a film, It adheres to the surfaces of these inner wall plate 70 and second inner wall plate 71. Accordingly, when cleaning the film forming furnace 60, the inner wall plate 70 and the second inner wall plate 71 are removed and cleaned or replaced with a new inner wall plate and a second inner wall plate. Can be removed. Thereby, the cleaning operation can be simplified and the cleaning time can be shortened.
[0022]
In the above embodiment, the inner wall plate to which the film is attached in the film forming furnace is provided in the exhaust passage connection region where adhesion is likely to occur. However, the present invention is not limited to this region, and can be arranged in other regions. is there. In other words, the film removal operation can be performed efficiently by providing the film forming apparatus 40 in a region where the film is likely to adhere.
Further, in the above-described embodiment, the configuration in which the inner wall plate is provided in the film forming apparatus that continuously forms the film is shown, but the present invention is not limited to this, and the single-wafer type film forming apparatus that processes one glass substrate at a time. For example, the inner wall plate according to the present invention can be applied.
[0023]
【The invention's effect】
As described above, according to the film forming apparatus of the present invention, the removable inner wall plate is provided on the inner wall surface of the film forming furnace for generating a film on the surface of the substrate by the chemical vapor deposition method. As a result, in the film forming furnace, the effective component in the vapor phase that can be a film adheres to the surface of the inner wall plate. Therefore, when performing the cleaning operation in the film forming furnace, the attached film can be easily removed simply by removing the inner wall plate and cleaning or replacing it with a new inner wall plate. The cleaning time can be shortened, and a film-formed glass substrate free from defects such as pinholes can be stably produced at a high yield. Thereby, productivity can be improved.
Further, by disposing the inner wall plate in the connection region of the exhaust passage where the film easily adheres, the work of removing the adhered film can be performed efficiently.
[0024]
Further, a second inner wall plate is detachably disposed on at least a part of the inner wall surface of the exhaust passage, and the inner wall plate is suspended by the second inner wall plate and fixed to the inner wall surface of the film forming furnace. By doing so, the inner wall plate disposed in the film forming furnace can be removed by removing the second inner wall plate. Thereby, the dismantling operation can be easily performed, and the cleaning operation can be facilitated and the cleaning time can be shortened.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a schematic configuration of a film forming furnace for generating a SiO 2 film or an ITO film in a film forming apparatus according to the present invention.
FIG. 2 is a perspective view showing an inner wall plate provided in a film forming furnace.
FIG. 3 is a cross-sectional view showing a state in which the inner wall plate shown in FIG. 2 is disposed inside the film forming furnace.
FIG. 4 is a perspective view showing a second inner wall plate provided in the exhaust passage portion of the film forming furnace.
5 is a cross-sectional view showing a state in which the second inner wall plate shown in FIG. 4 and the inner wall plate shown in FIG. 2 are assembled.
[Explanation of symbols]
40: Film forming apparatus 50 ... Belt conveyor (conveying means)
60 ... first film forming furnace 61 ... raw material supply passage 62 ... exhaust passage 63 ... muffle body 63a ... conveyance passage portion 63b ... chamber portion 63c ... exhaust passage portion (exhaust passage) aisle)
70 ... Inner wall plate 70a ... Upper plate portion 70b ... Side plate portion 70c ... Opening portion 71 ... Second inner wall plate 71a ... Side plate portion 71b ... Locking plate portion 71c・ Support plate

Claims (3)

基板を収容する空間を画定する成膜炉の内部に膜の原料を供給し、化学的気相成膜法により基板の表面に膜を生成する成膜装置であって、
前記成膜炉には膜の原料を供給する原料供給通路、及び、前記成膜炉の上方に突出するように、前記成膜炉の内部を排気する排気通路が接続されており、
前記排気通路の内壁面の少なくとも一部の領域に対して、着脱自在に配置された第2内壁板と、前記第2内壁板により吊り下げられて、前記成膜炉の内壁面に着脱自在に固定されている内壁板を有することを特徴とする成膜装置。
A film forming apparatus for supplying a film raw material into a film forming furnace for defining a space for accommodating a substrate and generating a film on the surface of the substrate by a chemical vapor deposition method,
The film forming furnace is connected to a raw material supply passage for supplying a raw material for the film and an exhaust passage for exhausting the inside of the film forming furnace so as to protrude above the film forming furnace.
A second inner wall plate that is detachably attached to at least a partial region of the inner wall surface of the exhaust passage, and is suspended by the second inner wall plate so as to be detachable from the inner wall surface of the film forming furnace. A film forming apparatus having an inner wall plate fixed.
基板を連続的に所定方向に搬送する搬送手段を有し、前記搬送手段の一部及び前記搬送手段に載置された基板を覆う空間を画定するように形成されている成膜炉の内部に膜の原料を供給し、化学的気相成膜法により基板の表面に膜を生成する成膜装置であって、
前記成膜炉には、膜の原料を供給する原料供給通路、及び、前記搬送手段の上側壁面から上方に突出するように、前記成膜炉の内部を排気する排気通路が接続されており、
前記排気通路の内壁面の少なくとも一部の領域に対して、着脱自在に配置された第2内壁板と、前記第2内壁板により吊り下げられて、前記成膜炉の内壁面に着脱自在に固定されている内壁板を有することを特徴とする成膜装置。
In a film forming furnace that has a transport unit that transports the substrate continuously in a predetermined direction, and is formed so as to define a space that covers a part of the transport unit and the substrate placed on the transport unit. A film forming apparatus for supplying a film raw material and generating a film on a surface of a substrate by a chemical vapor deposition method,
The film forming furnace is connected to a raw material supply passage for supplying a raw material for the film, and an exhaust passage for exhausting the inside of the film forming furnace so as to protrude upward from the upper wall surface of the transfer means.
A second inner wall plate that is detachably attached to at least a partial region of the inner wall surface of the exhaust passage, and is suspended by the second inner wall plate so as to be detachable from the inner wall surface of the film forming furnace. A film forming apparatus having an inner wall plate fixed.
前記内壁板は、少なくとも前記排気通路が接続された領域に配置されていることを特徴とする請求項1または2に記載の成膜装置。  The film forming apparatus according to claim 1, wherein the inner wall plate is disposed at least in a region to which the exhaust passage is connected.
JP17543099A 1999-06-22 1999-06-22 Deposition equipment Expired - Fee Related JP4234851B2 (en)

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