JP4230159B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4230159B2
JP4230159B2 JP2002085856A JP2002085856A JP4230159B2 JP 4230159 B2 JP4230159 B2 JP 4230159B2 JP 2002085856 A JP2002085856 A JP 2002085856A JP 2002085856 A JP2002085856 A JP 2002085856A JP 4230159 B2 JP4230159 B2 JP 4230159B2
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Japan
Prior art keywords
film
insulating film
semiconductor
region
forming
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Expired - Fee Related
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JP2002085856A
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Japanese (ja)
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JP2003282437A (ja
JP2003282437A5 (enExample
Inventor
舜平 山崎
朗 角田
敦生 磯部
秀和 宮入
明久 下村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002085856A priority Critical patent/JP4230159B2/ja
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Publication of JP2003282437A5 publication Critical patent/JP2003282437A5/ja
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JP2002085856A 2002-03-26 2002-03-26 半導体装置の作製方法 Expired - Fee Related JP4230159B2 (ja)

Priority Applications (1)

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JP2002085856A JP4230159B2 (ja) 2002-03-26 2002-03-26 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002085856A JP4230159B2 (ja) 2002-03-26 2002-03-26 半導体装置の作製方法

Publications (3)

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JP2003282437A JP2003282437A (ja) 2003-10-03
JP2003282437A5 JP2003282437A5 (enExample) 2005-09-02
JP4230159B2 true JP4230159B2 (ja) 2009-02-25

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JP2002085856A Expired - Fee Related JP4230159B2 (ja) 2002-03-26 2002-03-26 半導体装置の作製方法

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4534585B2 (ja) * 2004-05-11 2010-09-01 日立電線株式会社 薄膜半導体基板及びその製造方法
JP2006332172A (ja) * 2005-05-24 2006-12-07 Mitsubishi Electric Corp 半導体装置及び半導体装置の製造方法
JP2007005395A (ja) * 2005-06-21 2007-01-11 Mitsubishi Electric Corp 薄膜トランジスタ
JP2007142167A (ja) * 2005-11-18 2007-06-07 Hitachi Displays Ltd 表示装置およびその製造方法
US8047442B2 (en) * 2007-12-03 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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JP2003282437A (ja) 2003-10-03

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