JP4222932B2 - Hydrogen storage / release control method - Google Patents
Hydrogen storage / release control method Download PDFInfo
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- JP4222932B2 JP4222932B2 JP2003434765A JP2003434765A JP4222932B2 JP 4222932 B2 JP4222932 B2 JP 4222932B2 JP 2003434765 A JP2003434765 A JP 2003434765A JP 2003434765 A JP2003434765 A JP 2003434765A JP 4222932 B2 JP4222932 B2 JP 4222932B2
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- hydrogen
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/32—Hydrogen storage
Description
この出願の発明は、水素吸蔵・放出制御法に関するものである。さらに詳しくは、この出願の発明は、比較的低い圧力領域かつ室温付近での水素の速やかな吸蔵・放出を可能にする水素吸蔵・放出制御法に関するものである。 The invention of this application relates to a hydrogen storage / release control method. More specifically, the invention of this application relates to a hydrogen storage / release control method that enables quick storage / release of hydrogen in a relatively low pressure region and near room temperature.
金属、合金等の水素吸蔵材料に水素を吸蔵させる際には、反応が発熱反応であることから、水素圧を上げ、水素吸蔵材料の温度を下げている。一方、水素を放出させる際には、反応が吸熱反応であることから、水素圧を下げ、水素吸蔵材料の温度を上げている(たとえば、非特許文献1参照)。
実用的な水素吸蔵材料には、水素の吸蔵及び放出を比較的低い圧力領域かつ室温付近で速やかに行えることが要求される。 A practical hydrogen storage material is required to be able to quickly store and release hydrogen in a relatively low pressure region and near room temperature.
この出願の発明は、このような事情に鑑みてなされたものであり、比較的低い圧力領域かつ室温付近での水素の速やかな吸蔵・放出を可能にする水素吸蔵・放出制御法を提供することを解決すべき課題としている。 The invention of this application has been made in view of such circumstances, and provides a hydrogen storage / release control method that enables quick storage / release of hydrogen in a relatively low pressure region and near room temperature. Is a problem to be solved.
この出願の発明は、上記の課題を解決するものとして、第1には水素を吸蔵する金属に水素を吸蔵させる際に、表面格子振動における特性振動数の振動を加えることを特徴とする水素吸蔵制御法を提供する。 The invention of this application is to solve the above-mentioned problem. First, when storing a hydrogen in a metal that stores hydrogen , a hydrogen storage characteristic characterized by adding a vibration of a characteristic frequency in a surface lattice vibration. Provide a control method.
この出願の発明は、第2には、水素を吸蔵する金属に吸蔵された水素を放出させる際に、表面格子振動における特性振動数の振動を加えることを特徴とする水素放出制御法を提供する。 The invention of this application, the second provides when releasing hydrogen occluded in metal of occluding hydrogen, the hydrogen release control method characterized by applying an oscillating characteristic frequency of the surface lattice vibration .
この出願の発明は、第3および第4には、各々、水素を吸蔵する金属がパラジウムである前記第1および第2の制御法を提供する。 The invention of this application, the third and fourth, respectively, metal capable of absorbing hydrogen to provide the first and second control method is palladium.
この出願の発明の水素吸蔵・放出制御法によれば、比較的低い圧力領域かつ室温付近での水素の速やかな吸蔵・放出が可能となる。表面反応を活性にするために行われていたパラジウムメッキ等の処理が省略可能となる。 According to the hydrogen storage / release control method of the invention of this application, it is possible to quickly store and release hydrogen in a relatively low pressure region and near room temperature. Treatments such as palladium plating that have been performed to activate the surface reaction can be omitted.
この出願の発明の発明者らは、前記課題の解決のために鋭意検討したところ、水素吸蔵材料が水素を吸蔵・放出する際、表面格子が歪むことを見出し、また、水素が吸蔵・放出されるとき、水素吸蔵材料の表面の格子振動に特定の振動数があることを見出した。この出願の発明の水素吸蔵・放出制御法は、これらの知見に基づいて完成された。 The inventors of the invention of this application have intensively studied to solve the above problems, and found that when the hydrogen storage material absorbs and releases hydrogen, the surface lattice is distorted, and hydrogen is stored and released. The surface vibration of the hydrogen storage material has a specific frequency. The hydrogen storage / release control method of the invention of this application was completed based on these findings.
すなわち、金属、合金等の水素吸蔵材料に水素を吸蔵させる際に、水素吸蔵材料の表面格子にあらかじめ歪を加え、水素吸蔵を促進させる。また、水素吸蔵材料に吸蔵された水素を放出させる際にも、水素吸蔵材料の表面格子にあらかじめ歪を加え、水素放出を促進させる。表面格子の歪の誘起は、格子振動における特性振動数の振動を水素吸蔵材料に加えるにより行うことができる。 That is, when hydrogen is occluded in a hydrogen occlusion material such as a metal or an alloy, the surface lattice of the hydrogen occlusion material is strained in advance to promote hydrogen occlusion. Moreover, when releasing the hydrogen occluded in the hydrogen occlusion material, the surface lattice of the hydrogen occlusion material is distorted in advance to promote hydrogen release. Induction of the strain of the surface lattice can be performed by applying a vibration having a characteristic frequency in the lattice vibration to the hydrogen storage material.
この出願の発明の水素吸蔵・放出制御法では、水素吸蔵材料に所定の振動数の振動を付与することのできる振動供給手段は、特に制限されない。水素吸蔵材料の種類に応じてその材料の主要構成原子の固有振動数は異なる。たとえば種々のトランスデューサを使用することにより、水素吸蔵材料の固有振動数に相当する所定の振動数の弾性波を水素吸蔵材料に付与することができる。また、種々のレーザ照射装置を使用することにより、所定の振動数の電磁波を電磁波―弾性波変換トランスデューサに付与し、発生する所定の振動数の弾性波を水素吸蔵材料に付与することができる。さらに、所定の振動数の電磁波を直接水素吸蔵材料に照射することにより、水素の吸収・放出を効率化させる振動を起こさせることができる。 In the hydrogen storage / release control method of the invention of this application, there is no particular limitation on the vibration supply means that can impart vibrations of a predetermined frequency to the hydrogen storage material. Depending on the type of hydrogen storage material, the natural frequencies of the main constituent atoms of the material differ. For example, by using various transducers, an elastic wave having a predetermined frequency corresponding to the natural frequency of the hydrogen storage material can be applied to the hydrogen storage material. Further, by using various laser irradiation apparatuses, an electromagnetic wave having a predetermined frequency can be applied to the electromagnetic wave-elastic wave conversion transducer, and an elastic wave having a predetermined frequency generated can be applied to the hydrogen storage material. Furthermore, by directly irradiating the hydrogen storage material with an electromagnetic wave having a predetermined frequency, it is possible to cause vibrations that make hydrogen absorption / release more efficient.
水素吸蔵合金の一つであるパラジウムの水素吸放出に関わる表面格子振動の特性振動数の一つωPdは、密度汎関数理論に基づいた一般的な第一原理計算から7.7×1012[Hz]と算出される。この特性振動数の振動をパラジウムに加え、水素の吸収確率、放出確率を、振動を加えない場合と比較した。その結果を示したのが図1及び図2である。 One characteristic frequency ω Pd of surface lattice vibration related to hydrogen absorption and desorption of palladium, which is one of hydrogen storage alloys, is 7.7 × 10 12 [Hz from a general first-principles calculation based on density functional theory. ] Is calculated. This characteristic frequency vibration was added to palladium, and the hydrogen absorption and release probabilities were compared with the case where no vibration was applied. The results are shown in FIG. 1 and FIG.
図1から確認されるように、水素の吸収が低エネルギー領域から起こっている。このことは、水素吸蔵時の圧力の低減が可能であることを意味している。図2からは、水素の放出が低エネルギー領域から起こっていることが確認される。このことは、水素放出時の温度の低減が可能であることを意味している。 As can be seen from FIG. 1, hydrogen absorption occurs from the low energy region. This means that the pressure during hydrogen storage can be reduced. FIG. 2 confirms that the hydrogen release occurs from the low energy region. This means that the temperature during hydrogen release can be reduced.
もちろん、この出願の発明は、以上の実施例によって限定されるものではない。水素吸蔵材料の種類等の細部については様々な態様が可能であることはいうまでもない。 Of course, the invention of this application is not limited by the above embodiments. Needless to say, various aspects such as the type of the hydrogen storage material are possible.
以上詳しく説明したとおり、この出願の発明によって、比較的低い圧力領域かつ室温付近での水素の速やかな吸蔵・放出が可能となる。 As described above in detail, the invention of this application enables quick occlusion / release of hydrogen in a relatively low pressure region and near room temperature.
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JP2003434765A JP4222932B2 (en) | 2003-12-26 | 2003-12-26 | Hydrogen storage / release control method |
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JP2003434765A JP4222932B2 (en) | 2003-12-26 | 2003-12-26 | Hydrogen storage / release control method |
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JP2005187307A JP2005187307A (en) | 2005-07-14 |
JP4222932B2 true JP4222932B2 (en) | 2009-02-12 |
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JPH03205301A (en) * | 1989-08-04 | 1991-09-06 | Canon Inc | Method for storing hydrogen, apparatus for nuclear fusion at ordinary temperature utilizing the same method and method for generating heat energy |
JPH04160001A (en) * | 1990-10-20 | 1992-06-03 | Nippon Steel Corp | Method for occluding and liberating hydrogen in and from metal hydride |
JP2000264602A (en) * | 1999-03-19 | 2000-09-26 | Seiji Motojima | Hydrogen occlusion material, its production and its use |
US6337146B1 (en) * | 1999-06-11 | 2002-01-08 | Sumitomo Electric Industries, Ltd. | Hydrogen-occluding layered material |
JP2003230832A (en) * | 2002-02-08 | 2003-08-19 | Mitsubishi Heavy Ind Ltd | Method for manufacturing hydrogen-storage body |
JP2004136146A (en) * | 2002-10-15 | 2004-05-13 | Sony Corp | Gas occlusion method, gas releasing method and gas occlusion/releasing method, and gas occlusion apparatus, gas occlusion/releasing apparatus and gas storage device |
JP2004237232A (en) * | 2003-02-07 | 2004-08-26 | Toyota Motor Corp | Hydrogen occlusion substance and its manufacture, and hydrogen emission method from hydrogen occlusion substance |
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