JP4213536B2 - 高次高調波エックス線発生装置及びその発生方法、並びに高次高調波エックス線を利用したエックス線干渉計測装置 - Google Patents
高次高調波エックス線発生装置及びその発生方法、並びに高次高調波エックス線を利用したエックス線干渉計測装置 Download PDFInfo
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- JP4213536B2 JP4213536B2 JP2003278573A JP2003278573A JP4213536B2 JP 4213536 B2 JP4213536 B2 JP 4213536B2 JP 2003278573 A JP2003278573 A JP 2003278573A JP 2003278573 A JP2003278573 A JP 2003278573A JP 4213536 B2 JP4213536 B2 JP 4213536B2
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05G1/00—X-ray apparatus involving X-ray tubes; Circuits therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/20075—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials by measuring interferences of X-rays, e.g. Borrmann effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S4/00—Devices using stimulated emission of electromagnetic radiation in wave ranges other than those covered by groups H01S1/00, H01S3/00 or H01S5/00, e.g. phonon masers, X-ray lasers or gamma-ray lasers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/354—Third or higher harmonic generation
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Description
本発明は、前記のように、装置の小規模化と優秀な性能によって実際の産業界に適用可能な有用性を有し、本発明の高次高調波エックス線干渉計測装置を利用すれば、超紫外線光学系の表面品質を検査することが可能である。このような光学系表面品質測定技術は、今後、超紫外線光学系を製作供給する技術的パターンになる。
図2は、本発明のコヒーレントな高次高調波エックス線発生器の構造図である。図示したように、本発明のコヒーレントな高次高調波エックス線発生器は、高出力フェムト秒レーザー発生器10、レーザービーム集束強度調節器11、標的20、及び気体圧力調節器21で構成される。
Claims (5)
- 高次高調波エックス線を利用したエックス線干渉計測装置であって、
高次高調波エックス線ビームの入射経路に垂直に配置され、照射ビームと基準ビームである回折ビームを生成する微細孔が開いた薄膜からなる干渉計板と、前記基準ビームと前記照射ビームの経路に配置され、これらの結合によって生成された干渉縞を検出するエックス線検出器とを備え、前記干渉計板が、高出力フェムト秒レーザーによるドリリング技術を使用して微細孔を開けたマイクロ薄膜であり、当該エックス線干渉計測装置は、
高出力フェムト秒レーザー発生器と、前記高出力フェムト秒レーザー発生器から発生するフェムト秒レーザーのエネルギー及びビームの大きさを調節するためのレーザービーム集束強度調節器と、前記フェムト秒レーザーのビームを集束して高次高調波エックス線を生成するアルゴン気体が満たされた標的と、前記アルゴン気体の圧力を調節するための気体圧力調節器とから成り、前記高次高調波エックス線ビームを生成する高次高調波エックス線発生装置をさらに備えることを特徴とする高次高調波エックス線を利用したエックス線干渉計測装置。 - 前記高次高調波エックス線ビームが、前記レーザービーム集束強度調節器及び前記気体圧力調節器の調節により、単一次数の高調波が集中的に発生するようにしたことを特徴とする請求項1に記載の高次高調波エックス線を利用したエックス線干渉計測装置。
- 前記干渉計板と前記エックス線検出器の間に垂直に配置され、前記フェムト秒レーザー光によるノイズ成分を除去するエックス線フィルターをさらに備えることを特徴とする請求項2に記載の高次高調波エックス線を利用したエックス線干渉計測装置。
- 前記フェムト秒レーザーのパルス幅が、約20フェムト秒で、パルス当りのエネルギーが、約0.35mJであることを特徴とする請求項3に記載の高次高調波エックス線を利用したエックス線干渉計測装置。
- 前記干渉計板が、アクチュエイターによって、x−y軸上に移動可能であることを特徴とする請求項4に記載の高次高調波エックス線を利用したエックス線干渉計測装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030014134A KR100759023B1 (ko) | 2003-03-06 | 2003-03-06 | 고차 조화파 엑스선 발생장치 및 방법, 그리고 고차조화파 엑스선을 이용한 바늘구멍 에돌이 간섭계 |
Publications (2)
Publication Number | Publication Date |
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JP2004273415A JP2004273415A (ja) | 2004-09-30 |
JP4213536B2 true JP4213536B2 (ja) | 2009-01-21 |
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JP2003278573A Expired - Fee Related JP4213536B2 (ja) | 2003-03-06 | 2003-07-23 | 高次高調波エックス線発生装置及びその発生方法、並びに高次高調波エックス線を利用したエックス線干渉計測装置 |
Country Status (3)
Country | Link |
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US (1) | US6968038B2 (ja) |
JP (1) | JP4213536B2 (ja) |
KR (1) | KR100759023B1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7170030B2 (en) * | 2003-09-12 | 2007-01-30 | International Business Machines Corporation | Method and apparatus for repair of reflective photomasks |
JP2012515940A (ja) * | 2009-01-26 | 2012-07-12 | サントゥル ナシオナル ドゥ ラ ルシェルシュ シアンティ フィック セーエヌエールエス | コヒーレントな紫外線または超紫外線の極短パルス発生システム |
US8704198B2 (en) * | 2009-12-14 | 2014-04-22 | Massachusetts Institute Of Technology | Efficient high-harmonic-generation-based EUV source driven by short wavelength light |
KR101223811B1 (ko) * | 2010-12-31 | 2013-01-17 | 부산대학교 산학협력단 | 급격하게 세기가 증가하는 레이저 펄스를 이용한 고출력 극초단 엑스선 펄스의 발생 방법 |
JP6031659B2 (ja) * | 2012-03-16 | 2016-11-24 | 公立大学法人兵庫県立大学 | 短波長コヒーレント光源及び透過型の減光機構 |
KR101849978B1 (ko) | 2012-12-18 | 2018-04-19 | 삼성전자 주식회사 | 극자외선 광 발생 장치 및 방법 |
US9609729B2 (en) * | 2013-04-19 | 2017-03-28 | Raytheon Company | X-ray cells and other components having gas cells with thermally-induced density gradients |
CN106908950B (zh) * | 2017-03-16 | 2023-02-14 | 中国科学院西安光学精密机械研究所 | 一种电磁辐射产生装置及其使用方法 |
JP7123323B2 (ja) | 2018-02-21 | 2022-08-23 | ギガフォトン株式会社 | レーザシステム |
CN110274708B (zh) * | 2019-07-12 | 2020-04-10 | 西安交通大学 | 一种肿瘤细胞纳米级量子三维热成像系统 |
CN114301540A (zh) * | 2021-12-31 | 2022-04-08 | 南京航空航天大学 | 基于空间叠加脉冲幅度调制的x射线通信方法及设备 |
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US3961197A (en) * | 1974-08-21 | 1976-06-01 | The United States Of America As Represented By The United States Energy Research And Development Administration | X-ray generator |
JP3489974B2 (ja) | 1996-09-05 | 2004-01-26 | 科学技術振興事業団 | 超短パルス光発生方法と発生装置 |
US5835217A (en) | 1997-02-28 | 1998-11-10 | The Regents Of The University Of California | Phase-shifting point diffraction interferometer |
JP2000188198A (ja) * | 1998-12-21 | 2000-07-04 | Agency Of Ind Science & Technol | レ―ザ―プラズマx線源装置 |
JP2001023795A (ja) * | 1999-07-05 | 2001-01-26 | Toyota Macs Inc | X線発生装置 |
US6349128B1 (en) | 2000-04-27 | 2002-02-19 | Philips Electronics North America Corporation | Method and device using x-rays to measure thickness and composition of thin films |
US6706154B1 (en) * | 2001-03-09 | 2004-03-16 | Bayspec, Inc. | Method for fabricating integrated optical components using ultraviolet laser techniques |
JP3866063B2 (ja) * | 2001-07-31 | 2007-01-10 | 独立行政法人科学技術振興機構 | X線発生方法及びその装置 |
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2003
- 2003-03-06 KR KR1020030014134A patent/KR100759023B1/ko not_active IP Right Cessation
- 2003-07-22 US US10/626,748 patent/US6968038B2/en not_active Expired - Fee Related
- 2003-07-23 JP JP2003278573A patent/JP4213536B2/ja not_active Expired - Fee Related
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KR20040079191A (ko) | 2004-09-14 |
US20040174955A1 (en) | 2004-09-09 |
US6968038B2 (en) | 2005-11-22 |
JP2004273415A (ja) | 2004-09-30 |
KR100759023B1 (ko) | 2007-09-17 |
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