JP4210407B2 - レジスト積層物 - Google Patents

レジスト積層物 Download PDF

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Publication number
JP4210407B2
JP4210407B2 JP2000028235A JP2000028235A JP4210407B2 JP 4210407 B2 JP4210407 B2 JP 4210407B2 JP 2000028235 A JP2000028235 A JP 2000028235A JP 2000028235 A JP2000028235 A JP 2000028235A JP 4210407 B2 JP4210407 B2 JP 4210407B2
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JP
Japan
Prior art keywords
group
acid
resin
layer
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000028235A
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English (en)
Japanese (ja)
Other versions
JP2001215727A5 (enExample
JP2001215727A (ja
Inventor
健一郎 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2000028235A priority Critical patent/JP4210407B2/ja
Publication of JP2001215727A publication Critical patent/JP2001215727A/ja
Publication of JP2001215727A5 publication Critical patent/JP2001215727A5/ja
Application granted granted Critical
Publication of JP4210407B2 publication Critical patent/JP4210407B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
JP2000028235A 2000-02-04 2000-02-04 レジスト積層物 Expired - Fee Related JP4210407B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000028235A JP4210407B2 (ja) 2000-02-04 2000-02-04 レジスト積層物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000028235A JP4210407B2 (ja) 2000-02-04 2000-02-04 レジスト積層物

Publications (3)

Publication Number Publication Date
JP2001215727A JP2001215727A (ja) 2001-08-10
JP2001215727A5 JP2001215727A5 (enExample) 2005-12-22
JP4210407B2 true JP4210407B2 (ja) 2009-01-21

Family

ID=18553674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000028235A Expired - Fee Related JP4210407B2 (ja) 2000-02-04 2000-02-04 レジスト積層物

Country Status (1)

Country Link
JP (1) JP4210407B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5403943B2 (ja) * 2008-05-21 2014-01-29 昭和電工株式会社 ポリマー、感光性樹脂組成物及びレジストパターンの形成方法
JP5597616B2 (ja) * 2011-10-03 2014-10-01 富士フイルム株式会社 ネガ型化学増幅レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
WO2016046659A1 (en) * 2014-09-25 2016-03-31 Basf Se Ether-based polymers as photo-crosslinkable dielectrics
TWI662370B (zh) * 2015-11-30 2019-06-11 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用之塗料組合物
WO2019049795A1 (ja) * 2017-09-07 2019-03-14 Jsr株式会社 組成物、膜、膜の形成方法及びパターニングされた基板の製造方法
US11768436B2 (en) 2017-12-22 2023-09-26 Nissan Chemical Corporation Protective film forming composition having a diol structure
US11460771B2 (en) 2017-12-22 2022-10-04 Nissan Chemical Corporation Protective film forming composition having an acetal structure
CN115287060B (zh) * 2022-03-24 2023-05-26 辽宁科技大学 蓝光碳点、荧光粉和白光发光二极管及其制备方法

Also Published As

Publication number Publication date
JP2001215727A (ja) 2001-08-10

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