JP4164790B2 - アクティブ・ピクセル・センサ・システムおよびアクティブ・ピクセル検知方法 - Google Patents

アクティブ・ピクセル・センサ・システムおよびアクティブ・ピクセル検知方法 Download PDF

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JP4164790B2
JP4164790B2 JP2002037631A JP2002037631A JP4164790B2 JP 4164790 B2 JP4164790 B2 JP 4164790B2 JP 2002037631 A JP2002037631 A JP 2002037631A JP 2002037631 A JP2002037631 A JP 2002037631A JP 4164790 B2 JP4164790 B2 JP 4164790B2
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intensity
voltage
circuit element
time
signal
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Japanese (ja)
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JP2002271700A5 (enExample
JP2002271700A (ja
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ラッセル・エム・イイムラ
ジョイス・イー・ファレル
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マイクロン テクノロジー， インク．
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2002037631A 2001-02-16 2002-02-15 アクティブ・ピクセル・センサ・システムおよびアクティブ・ピクセル検知方法 Expired - Fee Related JP4164790B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/788,044 US20020113887A1 (en) 2001-02-16 2001-02-16 CMOS image sensor with extended dynamic range
US09/788044 2001-02-16

Publications (3)

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JP2002271700A JP2002271700A (ja) 2002-09-20
JP2002271700A5 JP2002271700A5 (enExample) 2005-08-25
JP4164790B2 true JP4164790B2 (ja) 2008-10-15

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JP2002037631A Expired - Fee Related JP4164790B2 (ja) 2001-02-16 2002-02-15 アクティブ・ピクセル・センサ・システムおよびアクティブ・ピクセル検知方法

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US (1) US20020113887A1 (enExample)
EP (1) EP1233612B1 (enExample)
JP (1) JP4164790B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7474345B2 (en) * 2001-10-24 2009-01-06 Texas Instruments Incorporated System and method to facilitate time domain sampling for solid state imager
US20030206236A1 (en) * 2002-05-06 2003-11-06 Agfa Corporation CMOS digital image sensor system and method
US7489352B2 (en) * 2002-11-15 2009-02-10 Micron Technology, Inc. Wide dynamic range pinned photodiode active pixel sensor (APS)
WO2005122551A1 (en) * 2004-06-09 2005-12-22 Philips Intellectual Property & Standards Gmbh Electronic circuit
US7462811B2 (en) * 2004-11-24 2008-12-09 Eastman Kodak Company Light detection circuit
US7489351B2 (en) * 2005-01-21 2009-02-10 Bae Systems Information And Electronic Systems Integration Inc. Dynamic range extension for focal plane arrays
KR100744117B1 (ko) * 2005-08-24 2007-08-01 삼성전자주식회사 손실이 없는 비선형 아날로그 게인 콘트롤러를 지닌 이미지 센서 및 제조 방법
EP1938584A4 (en) * 2005-09-21 2009-09-30 Technology Inc Rjs INTEGRATED WIDE DYNAMIC RANGE AND HIGH RESOLUTION
US7969490B2 (en) * 2006-08-25 2011-06-28 Micron Technology, Inc. Method, apparatus, and system providing an imager with pixels having extended dynamic range
US8288701B2 (en) * 2009-03-03 2012-10-16 Aptina Imaging Corporation Method and system for controlling power to pixels in an imager
US9131142B2 (en) 2009-07-17 2015-09-08 Nikon Corporation Focusing device and camera
KR20110129626A (ko) * 2010-05-26 2011-12-02 삼성전자주식회사 화상독취장치, 이를 구비하는 화상형성장치 및 화상독취장치의 화상품질 제어방법
TWI513301B (zh) * 2010-06-02 2015-12-11 新力股份有限公司 半導體裝置，固態成像裝置及相機系統
JP2013009194A (ja) * 2011-06-24 2013-01-10 Denso Corp 画素回路およびイメージセンサ
FR3131493B1 (fr) * 2021-12-29 2024-11-08 Commissariat Energie Atomique Procédé et capteur d'image à large gamme dynamique
FR3131494B1 (fr) * 2021-12-29 2024-11-08 Commissariat Energie Atomique Procédé et capteur d'image à large gamme dynamique piloté par événement

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6115066A (en) * 1997-06-12 2000-09-05 International Business Machines Corporation Image sensor with direct digital correlated sampling
US6344877B1 (en) * 1997-06-12 2002-02-05 International Business Machines Corporation Image sensor with dummy pixel or dummy pixel array
US5877715A (en) * 1997-06-12 1999-03-02 International Business Machines Corporation Correlated double sampling with up/down counter
US5920274A (en) * 1997-08-05 1999-07-06 International Business Machines Corporation Image sensor employing non-uniform A/D conversion
US6580454B1 (en) * 1998-11-18 2003-06-17 Agilent Technologies, Inc. CMOS active pixel sensor having in-pixel local exposure control
US6525304B1 (en) * 2000-11-28 2003-02-25 Foveon, Inc. Circuitry for converting analog signals from pixel sensor to a digital and for storing the digital signal

Also Published As

Publication number Publication date
EP1233612B1 (en) 2012-02-01
JP2002271700A (ja) 2002-09-20
EP1233612A1 (en) 2002-08-21
US20020113887A1 (en) 2002-08-22

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