JP4153296B2 - Substrate processing equipment - Google Patents

Substrate processing equipment Download PDF

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Publication number
JP4153296B2
JP4153296B2 JP2002380145A JP2002380145A JP4153296B2 JP 4153296 B2 JP4153296 B2 JP 4153296B2 JP 2002380145 A JP2002380145 A JP 2002380145A JP 2002380145 A JP2002380145 A JP 2002380145A JP 4153296 B2 JP4153296 B2 JP 4153296B2
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Japan
Prior art keywords
substrate
substrate stage
guide member
stage
lift
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JP2004214312A (en
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幹雄 渡部
修 入野
敏治 木村
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Ulvac Inc
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Ulvac Inc
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【0001】
【発明の属する技術分野】
本発明は、基板に所定の膜を形成するCVD装置やスパッタリングなどのPVD装置またはエッチング装置やアッシング装置等の基板処理装置に関する。
【0002】
【従来の技術】
例えば基板処理装置であるCVD装置は、真空排気手段を設けた真空チャンバを有する。該真空チャンバの天井部には、反応ガスと原料ガスとの混合ガスをチャンバ内部に導入するガス噴出手段が設けらている。該ガス噴出手段に対向して真空チャンバ内には基板ステージが設けられ、該基板ステージには、ウェハーなどの所定の基板が載置される。基板ステージに基板をロードするため、真空チャンバの側面には基板ステージとガス噴出手段との間に位置してゲートバルブを備えた基板搬送口が設けられている。
【0003】
この場合、基板搬送口に対応して真空チャンバの外壁にロードロックチャンバを付設してもよい。ロードロックチャンバと基板ステージとの間の基板の搬送は、先端部にフォーク状のアームを有する真空搬送手段によって行われる。そして、真空搬送手段によって基板ステージ上に基板をロードして、真空チャンバに所定の混合比に混合した反応ガスと原料ガスとから構成される混合ガスをガス噴出手段を介して導入し、気相化学反応させて基板上に所定の膜を形成する。尚、プロセスに寄与しない混合ガス等を含む排ガスは、真空チャンバに設けた真空排気手段により外部に排出される(特許文献1)。
【0004】
ここで、基板ステージに基板をロード、アンロードする場合、基板ステージ上の複数の箇所で支持して所定の高さで基板を担持できれば、基板と基板ステージとの間に形成された空間を利用してアームの出し入れができ、アームで基板を支持できる。この場合、例えば基板を吸着する真空チャック機構を省略でき、搬送手段の構造を簡素化できる。このため、基板のロード、アンロードの際、基板を担持する複数個の基板リフト手段を基板ステージに設けることが考えられる。各基板リフト手段は、例えば圧縮空気で駆動されるエアーシリンダなどの駆動手段をそれぞれ有し、基板ステージに設けた開口に挿設されたリフトピンを駆動する。
【0005】
【特許文献1】
特開2000−2127495号公報(例えば、図1参照)
【0006】
【発明が解決しようとする課題】
しかしながら、各リフトピンにそれぞれ駆動手段を設けたのでは部品点数が増加してコスト高を招く。特に、エアーシリンダなどの駆動部品は、例えばベローズを使用して真空シールする必要があるのでさらにコスト高を招き、耐久性も問題となる。
【0007】
また、金属製(熱膨張の大きい材質)の基板ステージに孔を設け、この孔に、チャンバに固定したリフトピンを、この基板ステージ下部側から貫通させて基板を昇降する場合、基板ステージの温度が上昇すると、リフトピンと基板ステージの孔との位置に差が生じ、相互に衝突してリフトピンまたは基板ステージを破損する場合があった。
【0008】
そこで、本発明は、上記点に鑑み、部品点数を少なくして低コストで製造でき、耐久性が高く、その上、昇降自在な基板ステージに簡単に装着できる基板リフト手段を有する基板処理装置を提供することを課題とするものである。
【0009】
【課題を解決するための手段】
上記課題を解決するため、本発明の基板処理装置は、チャンバを有し、当該チャンバ内に所定の処理を行うプロセス位置と基板のロード、アンロードを行い得る基板搬送位置との間で昇降自在に設けた基板ステージと、前記基板ステージに設けた少なくとも1個の基板リフト手段と、前記チャンバ内で基板ステージの下側に設けたストッパとを備えた基板処理装置であって、前記基板リフト手段は、基板ステージに形成した貫通孔に装着した筒状のガイド部材と、前記ガイド部材内に移動自在に挿設したリフトピンであって基板ステージ下端から下方に突出したものとから構成され、前記基板ステージが基板搬送位置に移動されると、前記リフトピンとストッパとが係合し、当該基板ステージの下降に伴って当該リフトピンが基板ステージから上方に突出して所定の高さで基板を担持し、前記基板ステージがロード、アンロード位置に移動されると、前記リフトピンとストッパとの係合が解除され、当該基板ステージの上昇に伴って当該リフトピンがガイド部材内に収納されて当該基板ステージに基板が載置されるものにおいて、前記基板ステージ下端から下方に突出したリフトピンの一部が貫通する孔を有し、当該リフトピン及びガイド部材の前記貫通孔からの脱落を防止する第2ガイド部材を前記ガイド部材の下端から所定の間隔を存して設けたことを特徴とする。
【0010】
本発明によれば、基板ステージを基板搬送位置に移動させ、搬送手段によって基板を基板ステージにロードする。基板搬送位置では、基板ステージに設けた基板リフト手段がストッパと係合し、基板ステージから上方に突出しているので、基板は各リフト手段で支持される。この場合、基板と基板ステージの上面との間に所定の空間が画成されるので、この空間を利用して搬送手段の先端部のアームを出し入れでき、基板をアームで支持できる。
【0011】
基板ステージに基板がロードされると、基板ステージが上昇してプロセス位置に到達する。その際、基板リフト手段とストッパとの係合は解除されて下方に移動するので、基板ステージ上の基板は所定の高さまで下降する。そして、基板ステージのプロセス位置で所定の基板処理が行われる。
【0012】
基板処理が完了すると、基板をアンロードするため基板ステージを下降させる。基板ステージが所定の位置まで下降すると基板リフト手段がストッパと再度係合する。この場合、基板ステージの下降に伴って基板リフト手段が基板ステージの上面から突出し、基板搬送位置では、基板リフト手段によって基板ステージから所定の高さに基板が担持される。
【0013】
これにより、各基板リフト手段に駆動手段を設けることなく、基板ステージを昇降させるだけで該基板ステージ上で基板を昇降させることができる。また、耐久性が問題となるベローズ等の真空シール用の部品も必要でない。そして、搬送手段によって基板がアンロードされ、基板処理しようとする次ぎの基板がロードされる。
【0016】
ここで、リフトピンがガイド部材内部を動く際、摩擦が大きくなるとリフトピンの円滑な移動が阻害される危険性がある。そこで、本発明においては、前記基板ステージ下端から下方に突出したリフトピンの一部が貫通する孔を有し、当該リフトピン及びガイド部材の前記貫通孔からの脱落を防止する第2ガイド部材を当該基板ステージ下方に設けたため、ガイド部材内でのリフトピンのがたつきが防止されると共に、ガイド部材とリフトピンとが落下するのを防止できる。
【0017】
また、前記基板ステージを、基板搬送位置からプロセス位置に移動させたとき、前記リフトピンを下方に向かって動かす移動手段を設け、当該移動手段は、リフトピンの下端部に設けた重しと、当該重しと前記ガイド部材との間に縮設したばねとから構成されるようにしてもよい。
【0018】
さらに、前記リフトピンが上部にフランジを有する下ピンと、当該フランジに接続された上ピンとから構成され、当該基板ステージがプロセス位置にある場合に、当該フランジが、前記ガイド部材の下端を内方に向かって屈曲させた屈曲部に接触し、前記上ピンの上端面が基板ステージ上面と面一となるようにしてもよい。
【0019】
【発明の実施の形態】
図1及び図2を参照して、1は、本発明の基板処理装置の一例であるCVD装置を示す。このCVD装置1は、シリコンウェハーやガラス等の基板S上に気相化学反応により薄膜を形成するものであり、ターボ分子ポンプなどの真空排気手段11aを有する所定の容積の真空チャンバ11を有する。真空チャンバ11の天井部12の略中央には、反応ガスと原料ガスとから構成される混合ガスを真空チャンバ11内に導入するガス噴出手段2が設けれている。
【0020】
ガス噴出手段2は、真空チャンバ11の天上部12から内方に向かって突出させた環状の突出部21と、その先端部に装着され複数個の孔が開設されたシャワープレート22とから構成される。この場合、真空チャンバ11の上部には、突出部21とシャワープレート22とによってガス拡散室23が形成され、該ガス拡散室23内に導入された混合ガスをその全体に亘って拡散する。真空チャンバ11の天井部12にはまた、一端が混合器(図示せず)に接続されたガス導入管24が接続され、複数のガス源に接続された混合器で混合された混合ガスが拡散室23に導入される。ガス噴出手段2に対して真空チャンバ11内には基板ステージ3が設けられ、該基板ステージ3にはウェハーなどの基板Sが載置される。
【0021】
基板ステージ3上に基板Sをロード、アンロードするために、真空チャンバ11にゲートバルブを有する基板搬送口13を設けている。この場合、CVDプロセスの実行時、基板S上の薄膜の膜厚分布及び組成分布が均一になるようにガス噴出手段2を介して基板Sに混合ガスを均等に噴出しても、基板搬送口13が基板ステージ3の上方に位置したのでは、該基板搬送口13の周辺で乱流が発生してガスの流れが乱れることで、基板S上のガスの流れも乱れて薄膜の膜厚分布及び組成分布が均一にならない。
【0022】
本実施の形態では、基板ステージ3を、基板処理であるCVDプロセスを実行するプロセス位置と基板のロード、アンロードを行い得る基板搬送位置との間で昇降自在に形成し、プロセス位置では、基板ステージ3下方に基板搬送口13が位置するようにした。また、ガスの流れに関するコンダクタンスは、シャワープレート22と基板ステージ3との間の空間Aに比べて基板ステージ3下側の空間Bがより大きな値をもつことが望ましい(図2参照)。
【0023】
基板ステージ3は、ガス噴出手段2と対向した金属製の基板載置部31に、真空チャンバ11の底面から真空チャンバ11内に突出させて設けた昇降ロッド32を接続して構成されている。基板載置部31には基板Sの加熱を可能とするヒータ(図示せず)が組込まれている。また、昇降ロッド32は、例えば圧縮空気またはモータで駆動され、昇降ロッド32の周囲にベローズ33を設けて真空シールしている。
【0024】
ところで、3次元方向に移動可能であって先端にフォーク状のアームを設けた既知の真空搬送手段によって基板ステージ3に基板をロード、アンロードする場合、基板載置部31上の複数の箇所で支持して所定の高さで基板Sを担持できれば、真空搬送手段の構造を簡素化できる。本実施の形態では、基板Sを水平に持ち上げられるように、正三角形の各頂点に対応する基板載置部31の所定の位置に3個の基板リフト手段4を設けた。
【0025】
図3を参照して、基板リフト手段4は、基板載置部31に設けた貫通孔31aに下側から螺着された中空円筒形状のガイド部材41を有する。この場合、ガイド部材41の下端部は基板載置部31の裏面から突出している。ガイド部材41の内部にはリフトピン42が挿設されている。リフトピン42は、上部にフランジ42cを有する下ピン42aと、フランジ42cに接続された上ピン42bとから構成される。この場合、リフトピン42は、真空中でも耐熱性及び機械的強度を有する材料、例えばセラミックスから一体に成形されている。特に、リフトピン42の材料は、基板ステージ3が加熱されることを考慮して、高純度のアルミナセラミックスなどの耐熱材がよい。
【0026】
上ピン42bの長さ寸法は、フランジ42cが、ガイド部材41の下端を内方に向かって屈曲させた屈曲部41aに接触した場合に、上ピン42bの上端面が基板載置部31の上面と面一、または上ピン42bの方が基板載置部31より僅かに低くなるように定寸されている。他方で、下ピン42aは、基板ステージ3が基板搬送位置にある場合、下ピン42aの下端部が真空チャンバ11の底面に設けたストッパ14と係合し、上ピン42bが基板載置部31の上面から所定の高さだけ突出するように定寸されている。尚、下ピン42aの下端部は丸み加工するのがよい。
【0027】
また、基板ステージ3の昇降に伴ってガイド部材41が緩み、上下動する際にリフトピン42とガイド部材41とが共にがたつかないように、ガイド部材41から突出した下ピン42aが貫通する孔を備えた第2ガイド部材5を設けてもよい。これにより、リフトピン42とガイド部材41とが落下するのを防止できる。さらに、ガイド部材41が上下動する際、摩擦抵抗が増加して、リフトピン42に対するガイド部材41の円滑な移動が阻害されないように、フランジ42cの外周面を球面加工してもよく、ガイド部材41の内周面を鏡面加工してもよい。
【0028】
図4に示すように、下ピン42aの下端部にウェイト43を設けると共に、重し43とガイド部材41との間にばね44を設けて、リフトピン42を下方に向かって付勢してもよい。
【0029】
次に、基板リフト手段4の作動を説明する。図1に示す基板ステージ3の基板搬送位置では、ガイド部材41の下端面から突出したリフトピン42の下ピン42aがストッパ14に接触しているので、上ピン42bが基板載置部31の上面から突出している。この状態で、基板搬送口13に設けたゲートバルブを開け、真空搬送手段によって基板載置部31に所定の基板Sをロードする。基板Sがロードされ、ゲートバルブが閉じると基板ステージ3を上昇させる。
【0030】
ここで、基板ステージ3が上昇しても、その当初、リフトピン42が移動を開始しないが、基板載置部31に装着したガイド部材41が上昇することで、基板Sと基板載置部31との間の距離が短くなる。そして、フランジ42cがガイド部材41の屈曲部41aに接触すると、基板Sが基板載置部31に載置され、基板ステージ3がプロセス位置に到達する。この場合、下ピン42aの大部分がガイド部材41の下端面から突出している。
【0031】
プロセス位置で所定のCVDプロセスが終了した後、基板ステージ3を下降させると、ガイド部材41の下端面から突出した下ピン42aの下端面が先ずストッパ14と接触する。下ピン42aとストッパ14とが接触すると、リフトピン42はもはや下降しない。このため、基板ステージ3の下降に伴って、上ピン42bが基板載置部31の上面から突出することで基板Sが上昇される。基板搬送位置に基板ステージ3が到達すると、基板Sは基板載置部31から所定の高さで担持される。そして、真空搬送手段によって基板Sがアンロードされ、新たな基板ロードされる。
【0032】
これにより、各基板リフト手段4は、基板ステージ3を昇降させるだけで該基板ステージ3上で基板Sを昇降させることができ、別個の駆動手段は必要でない。
【0033】
【発明の効果】
以上説明したように、本発明では、基板リフト手段を、部品点数が少なくて低コストで製造でき、耐久性が高く、その上、基板ステージを昇降自在としても簡単に装着できるという効果を奏する。
【図面の簡単な説明】
【図1】基板ステージが基板搬送位置にある本発明の基板処理装置の断面図
【図2】基板ステージがプロセス位置にある本発明の基板処理装置の断面図
【図3】基板リフト手段を拡大して示す図
【図4】基板リフト手段の他の変形例を示す図
【符号の説明】
1 基板処理装置(CVD装置)
3 基板ステージ
4 基板リフト手段
41 ガイド部材
42 リフトピン
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a CVD apparatus for forming a predetermined film on a substrate, a PVD apparatus such as sputtering, or a substrate processing apparatus such as an etching apparatus or an ashing apparatus.
[0002]
[Prior art]
For example, a CVD apparatus which is a substrate processing apparatus has a vacuum chamber provided with a vacuum exhaust means. A gas ejection means for introducing a mixed gas of the reaction gas and the source gas into the chamber is provided at the ceiling of the vacuum chamber. A substrate stage is provided in the vacuum chamber so as to face the gas ejection means, and a predetermined substrate such as a wafer is placed on the substrate stage. In order to load a substrate onto the substrate stage, a substrate transfer port provided with a gate valve is provided on the side surface of the vacuum chamber between the substrate stage and the gas jetting means.
[0003]
In this case, a load lock chamber may be attached to the outer wall of the vacuum chamber corresponding to the substrate transfer port. The transfer of the substrate between the load lock chamber and the substrate stage is performed by a vacuum transfer means having a fork-shaped arm at the tip. Then, the substrate is loaded on the substrate stage by the vacuum transfer means, and the mixed gas composed of the reaction gas and the raw material gas mixed at a predetermined mixing ratio is introduced into the vacuum chamber through the gas ejection means, and the gas phase A predetermined film is formed on the substrate by chemical reaction. In addition, the exhaust gas containing the mixed gas etc. which do not contribute to a process is discharged | emitted outside by the vacuum exhaust means provided in the vacuum chamber (patent document 1).
[0004]
Here, when loading / unloading a substrate to / from the substrate stage, the space formed between the substrate and the substrate stage can be used as long as the substrate can be supported at a plurality of locations on the substrate stage and supported at a predetermined height. The arm can be taken in and out, and the substrate can be supported by the arm. In this case, for example, a vacuum chuck mechanism for adsorbing the substrate can be omitted, and the structure of the transport means can be simplified. For this reason, it is conceivable to provide a plurality of substrate lifting means for supporting the substrate on the substrate stage when loading or unloading the substrate. Each substrate lift means has a drive means such as an air cylinder driven by compressed air, for example, and drives lift pins inserted into openings provided in the substrate stage.
[0005]
[Patent Document 1]
Japanese Unexamined Patent Publication No. 2000-2127495 (see, for example, FIG. 1)
[0006]
[Problems to be solved by the invention]
However, if each lift pin is provided with a driving means, the number of parts increases and the cost increases. In particular, a drive part such as an air cylinder needs to be vacuum-sealed using, for example, a bellows, so that the cost is increased and durability is also a problem.
[0007]
Also, when a hole is provided in a metal substrate stage (material with high thermal expansion) and a lift pin fixed to the chamber is passed through the hole from the lower side of the substrate stage, the temperature of the substrate stage is increased. When raised, there is a difference between the position of the lift pin and the hole of the substrate stage, which may collide with each other and damage the lift pin or the substrate stage.
[0008]
Therefore, in view of the above points, the present invention provides a substrate processing apparatus having a substrate lifting means that can be manufactured at a low cost by reducing the number of components, has high durability, and can be easily mounted on a freely movable substrate stage. The issue is to provide.
[0009]
[Means for Solving the Problems]
In order to solve the above-described problems, the substrate processing apparatus of the present invention has a chamber, and can move up and down between a process position where a predetermined process is performed in the chamber and a substrate transfer position where the substrate can be loaded and unloaded. a substrate stage which is provided on said at least one substrate lifting means provided on the substrate stage, a substrate processing apparatus including a stopper provided on the lower side of the substrate stage in the chamber, said substrate lifting means is constituted by a cylindrical guide member mounted in a through hole formed on the substrate stage, from movable in the substrate stage lower a inserted the lift pins to that projects downward into the guide member, the substrate When the stage is moved to the substrate transfer position, the lift pins and stopper and engages, the lift pins with the descent of the substrate stage or the substrate stage Projects upward carries the substrate at a predetermined height, the substrate stage is loaded and moved to the unload position, the engagement between the lift pin and the stopper is released, the with increasing the substrate stage The lift pin is housed in the guide member and the substrate is placed on the substrate stage. The lift pin protrudes downward from the lower end of the substrate stage and has a hole through which the lift pin and the guide member have the holes. The second guide member for preventing the drop from the through hole is provided at a predetermined interval from the lower end of the guide member .
[0010]
According to the present invention, the substrate stage is moved to the substrate transfer position, and the substrate is loaded onto the substrate stage by the transfer means. At the substrate transfer position, the substrate lift means provided on the substrate stage engages with the stopper and protrudes upward from the substrate stage, so that the substrate is supported by each lift means. In this case, since a predetermined space is defined between the substrate and the upper surface of the substrate stage, the arm at the front end of the transfer means can be taken in and out using this space, and the substrate can be supported by the arm.
[0011]
When the substrate is loaded on the substrate stage, the substrate stage rises and reaches the process position. At that time, since the engagement between the substrate lifting means and the stopper is released and moves downward, the substrate on the substrate stage is lowered to a predetermined height. Then, predetermined substrate processing is performed at the process position of the substrate stage.
[0012]
When the substrate processing is completed, the substrate stage is lowered to unload the substrate. When the substrate stage is lowered to a predetermined position, the substrate lift means is engaged with the stopper again. In this case, the substrate lift means protrudes from the upper surface of the substrate stage as the substrate stage descends, and the substrate is supported at a predetermined height from the substrate stage by the substrate lift means at the substrate transfer position.
[0013]
As a result, the substrate can be raised and lowered on the substrate stage only by raising and lowering the substrate stage without providing a driving means for each substrate lifting means. Further, vacuum seal parts such as bellows, which have a problem with durability, are not necessary. Then, the substrate is unloaded by the transfer means, and the next substrate to be processed is loaded.
[0016]
Here, when the lift pin moves inside the guide member, if the friction increases, there is a risk that the smooth movement of the lift pin is hindered. Therefore, in the present invention, a second guide member that has a hole through which a part of the lift pin protruding downward from the lower end of the substrate stage passes and prevents the lift pin and the guide member from falling off the through hole is provided on the substrate. Since it is provided below the stage, it is possible to prevent the lift pins from rattling within the guide member and to prevent the guide member and lift pins from falling.
[0017]
Furthermore, the substrate stage, when moving to the process position from the substrate transfer position, a moving means for moving the lift pins downward is provided, the mobile unit includes a weigh provided at the lower end of the lift pin, the heavy And a spring contracted between the guide member and the guide member.
[0018]
Further, the lift pin is composed of a lower pin having a flange on the upper part and an upper pin connected to the flange, and when the substrate stage is in the process position, the flange faces the lower end of the guide member inward. The upper pin may be in contact with the bent portion and the upper end surface of the upper pin may be flush with the upper surface of the substrate stage.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
1 and 2, reference numeral 1 denotes a CVD apparatus which is an example of a substrate processing apparatus of the present invention. The CVD apparatus 1 forms a thin film by a gas phase chemical reaction on a substrate S such as a silicon wafer or glass, and includes a vacuum chamber 11 having a predetermined volume having a vacuum exhaust means 11a such as a turbo molecular pump. Near the center of the ceiling portion 12 of the vacuum chamber 11, gas ejection means 2 for introducing a mixed gas composed of a reaction gas and a raw material gas into the vacuum chamber 11 is provided.
[0020]
The gas ejection means 2 is composed of an annular projecting portion 21 projecting inward from the top 12 of the vacuum chamber 11 and a shower plate 22 attached to the tip of the chamber and having a plurality of holes. The In this case, a gas diffusion chamber 23 is formed on the upper portion of the vacuum chamber 11 by the protruding portion 21 and the shower plate 22, and the mixed gas introduced into the gas diffusion chamber 23 is diffused over the entirety. A gas introduction pipe 24 having one end connected to a mixer (not shown) is also connected to the ceiling portion 12 of the vacuum chamber 11, and the mixed gas mixed in the mixer connected to a plurality of gas sources is diffused. It is introduced into the chamber 23. A substrate stage 3 is provided in the vacuum chamber 11 with respect to the gas ejection means 2, and a substrate S such as a wafer is placed on the substrate stage 3.
[0021]
In order to load and unload the substrate S on the substrate stage 3, a substrate transfer port 13 having a gate valve is provided in the vacuum chamber 11. In this case, when the CVD process is performed, even if the mixed gas is uniformly ejected to the substrate S through the gas ejection means 2 so that the film thickness distribution and the composition distribution of the thin film on the substrate S are uniform, When 13 is positioned above the substrate stage 3, turbulent flow is generated around the substrate transfer port 13, and the gas flow is disturbed, so that the gas flow on the substrate S is also disturbed and the film thickness distribution of the thin film. And the composition distribution is not uniform.
[0022]
In the present embodiment, the substrate stage 3 is formed to be movable up and down between a process position for executing a CVD process, which is a substrate process, and a substrate transfer position at which the substrate can be loaded and unloaded. The substrate transfer port 13 is positioned below the stage 3. Further, it is desirable that the conductance relating to the gas flow has a larger value in the space B below the substrate stage 3 than in the space A between the shower plate 22 and the substrate stage 3 (see FIG. 2).
[0023]
The substrate stage 3 is configured by connecting a lifting / lowering rod 32 provided to protrude from the bottom surface of the vacuum chamber 11 into the vacuum chamber 11 to a metal substrate mounting portion 31 facing the gas ejection means 2. A heater (not shown) that can heat the substrate S is incorporated in the substrate platform 31. The elevating rod 32 is driven by, for example, compressed air or a motor, and a bellows 33 is provided around the elevating rod 32 for vacuum sealing.
[0024]
By the way, when a substrate is loaded and unloaded on the substrate stage 3 by a known vacuum transfer means that can move in a three-dimensional direction and is provided with a fork-shaped arm at the tip, a plurality of locations on the substrate platform 31 are used. If the substrate S can be supported and supported at a predetermined height, the structure of the vacuum transfer means can be simplified. In the present embodiment, the three substrate lift means 4 are provided at predetermined positions of the substrate platform 31 corresponding to the vertices of the equilateral triangle so that the substrate S can be lifted horizontally.
[0025]
Referring to FIG. 3, the substrate lift means 4 has a hollow cylindrical guide member 41 screwed from below into a through hole 31 a provided in the substrate platform 31. In this case, the lower end portion of the guide member 41 protrudes from the back surface of the substrate platform 31. A lift pin 42 is inserted into the guide member 41. The lift pin 42 includes a lower pin 42a having a flange 42c at an upper portion and an upper pin 42b connected to the flange 42c. In this case, the lift pins 42 are integrally formed from a material having heat resistance and mechanical strength, for example, ceramics even in a vacuum. In particular, the material of the lift pins 42 is preferably a heat-resistant material such as high-purity alumina ceramics in consideration of the fact that the substrate stage 3 is heated.
[0026]
The length dimension of the upper pin 42b is such that the upper end surface of the upper pin 42b is the upper surface of the substrate mounting portion 31 when the flange 42c comes into contact with a bent portion 41a in which the lower end of the guide member 41 is bent inward. The upper pins 42b are sized so that they are slightly lower than the substrate placement portion 31. On the other hand, when the substrate stage 3 is in the substrate transfer position, the lower pin 42a engages with the stopper 14 provided on the bottom surface of the vacuum chamber 11 when the substrate stage 3 is in the substrate transfer position, and the upper pin 42b It is dimensioned so as to protrude by a predetermined height from the upper surface. The lower end of the lower pin 42a is preferably rounded.
[0027]
Further, a hole through which the lower pin 42a protruding from the guide member 41 penetrates so that the guide pin 41 loosens as the substrate stage 3 moves up and down and the lift pin 42 and the guide member 41 do not rattle when moving up and down. You may provide the 2nd guide member 5 provided with. Thereby, it can prevent that the lift pin 42 and the guide member 41 fall. Furthermore, when the guide member 41 moves up and down, the outer peripheral surface of the flange 42c may be spherically processed so that the frictional resistance increases and the smooth movement of the guide member 41 with respect to the lift pin 42 is not hindered. The inner peripheral surface may be mirror-finished.
[0028]
As shown in FIG. 4, a weight 43 may be provided at the lower end of the lower pin 42a, and a spring 44 may be provided between the weight 43 and the guide member 41 to urge the lift pin 42 downward. .
[0029]
Next, the operation of the substrate lift means 4 will be described. In the substrate transfer position of the substrate stage 3 shown in FIG. 1, the lower pin 42 a protruding from the lower end surface of the guide member 41 is in contact with the stopper 14, so that the upper pin 42 b extends from the upper surface of the substrate platform 31. It protrudes. In this state, the gate valve provided at the substrate transfer port 13 is opened, and a predetermined substrate S is loaded onto the substrate platform 31 by the vacuum transfer means. When the substrate S is loaded and the gate valve is closed, the substrate stage 3 is raised.
[0030]
Here, even if the substrate stage 3 is raised, the lift pin 42 does not start to move at the beginning, but the guide member 41 attached to the substrate platform 31 rises, so that the substrate S, the substrate platform 31, The distance between is shortened. When the flange 42c comes into contact with the bent portion 41a of the guide member 41, the substrate S is placed on the substrate placing portion 31 and the substrate stage 3 reaches the process position. In this case, most of the lower pin 42 a protrudes from the lower end surface of the guide member 41.
[0031]
When the substrate stage 3 is lowered after the predetermined CVD process is completed at the process position, the lower end surface of the lower pin 42 a protruding from the lower end surface of the guide member 41 first comes into contact with the stopper 14. When the lower pin 42a comes into contact with the stopper 14, the lift pin 42 no longer descends. For this reason, as the substrate stage 3 is lowered, the upper pin 42 b protrudes from the upper surface of the substrate platform 31, thereby raising the substrate S. When the substrate stage 3 reaches the substrate transfer position, the substrate S is carried from the substrate platform 31 at a predetermined height. Then, the substrate S is unloaded by the vacuum transfer means, and a new substrate is loaded.
[0032]
Thereby, each substrate lift means 4 can raise and lower the substrate S on the substrate stage 3 only by raising and lowering the substrate stage 3, and a separate driving means is not necessary.
[0033]
【The invention's effect】
As described above, according to the present invention, the substrate lifting means can be manufactured at a low cost with a small number of parts, and has high durability. In addition, the substrate lifting means can be easily mounted even if the substrate stage can be raised and lowered.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a substrate processing apparatus of the present invention in which a substrate stage is in a substrate transfer position. FIG. 2 is a cross-sectional view of the substrate processing apparatus of the present invention in which a substrate stage is in a process position. FIG. 4 is a diagram showing another modification of the substrate lifting means.
1 Substrate processing equipment (CVD equipment)
3 Substrate stage 4 Substrate lift means 41 Guide member 42 Lift pin

Claims (3)

チャンバを有し、当該チャンバ内に、所定の処理を行うプロセス位置と基板のロード、アンロードを行い得る基板搬送位置との間で昇降自在に設けた基板ステージと、
前記基板ステージに設けた少なくとも1個の基板リフト手段と、
前記チャンバ内で基板ステージの下側に設けたストッパとを備えた基板処理装置であって
前記基板リフト手段は、基板ステージに形成した貫通孔に装着した筒状のガイド部材と、前記ガイド部材内に移動自在に挿設したリフトピンであって基板ステージ下端から下方に突出したものとから構成され、
前記基板ステージが基板搬送位置に移動されると、前記リフトピンとストッパとが係合し、当該基板ステージの下降に伴って当該リフトピンが基板ステージから上方に突出して所定の高さで基板を担持し、前記基板ステージがロード、アンロード位置に移動されると、前記リフトピンとストッパとの係合が解除され、当該基板ステージの上昇に伴って当該リフトピンがガイド部材内に収納されて当該基板ステージに基板が載置されるものにおいて、
前記基板ステージ下端から下方に突出したリフトピンの一部が貫通する孔を有し、当該リフトピン及びガイド部材の前記貫通孔からの脱落を防止する第2ガイド部材を前記ガイド部材の下端から所定の間隔を存して設けたことを特徴とする基板処理装置。
Has a chamber, into the chamber, a substrate stage which is provided vertically movably between the substrate transfer position the process position and a substrate loading may perform unloading for performing predetermined processing,
At least one substrate lifting means provided on the substrate stage ;
A substrate processing apparatus comprising a stopper provided below the substrate stage in the chamber;
The substrate lift means comprises a cylindrical guide member mounted in a through-hole formed in the substrate stage, and lift pins that are movably inserted into the guide member and project downward from the lower end of the substrate stage. And
When the substrate stage is moved to the substrate transfer position, the lift pins and the stoppers are engaged, and as the substrate stage is lowered, the lift pins protrude upward from the substrate stage to carry the substrate at a predetermined height. When the substrate stage is moved to the load / unload position, the engagement between the lift pin and the stopper is released, and the lift pin is accommodated in the guide member as the substrate stage rises, and the substrate stage is moved to the substrate stage. In what the substrate is placed on ,
A portion of the lift pin protruding downward from the lower end of the substrate stage has a hole through which a second guide member for preventing the lift pin and the guide member from falling off the through hole is spaced from the lower end of the guide member by a predetermined distance. substrate processing apparatus is characterized in that provided it exists a.
前記基板ステージを、基板搬送位置からプロセス位置に移動させたとき、前記リフトピンを下方に向かって動かす移動手段を設け、当該移動手段は、リフトピンの下端部に設けた重しと、当該重しと前記ガイド部材との間に縮設したばねとから構成されることを特徴とする請求項1記載の基板処理装置。When the substrate stage is moved from the substrate transfer position to the process position, moving means for moving the lift pin downward is provided, the moving means includes a weight provided at a lower end portion of the lift pin, the weight The substrate processing apparatus according to claim 1, comprising a spring contracted between the guide member and the guide member. 前記リフトピンが上部にフランジを有する下ピンと、当該フランジに接続された上ピンとから構成され、当該基板ステージがプロセス位置にある場合に、当該フランジが、前記ガイド部材の下端を内方に向かって屈曲させた屈曲部に接触し、前記上ピンの上端面が基板ステージ上面と面一となることを特徴とする請求項1または請求項2記載の基板処理装置。  The lift pin is composed of a lower pin having a flange on the upper part and an upper pin connected to the flange. When the substrate stage is in the process position, the flange bends the lower end of the guide member inward. The substrate processing apparatus according to claim 1, wherein the upper end surface of the upper pin is flush with an upper surface of the substrate stage.
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