JP4152062B2 - Solid-state imaging device, manufacturing method thereof, image reading unit, and image scanning device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a solid-state imaging device such as an image reading device that reads an optical image using a solid-state imaging device, and is a semiconductor that can be applied to, for example, a copying machine, an image scanner, a facsimile, a digital camera, a video camera, a stomach camera, and the like. Related to mounting technology.
[0002]
[Prior art]
Conventionally, as a manufacturing method of a solid-state imaging device, a method in which a solid-state imaging device typified by a CCD is mounted on a package using a ceramic as an insulating base (hereinafter referred to as a ceramic package) has been mainly used.
[0003]
A conventional solid-state imaging device will be described below with reference to the drawings. FIG. 8 is a cross-sectional view showing a conventional solid-state imaging device.
[0004]
The conventional solid-state imaging device shown in FIG. 8 is mounted in a recess 802a on the upper surface of a ceramic package 802 having a terminal group 801 for outputting an electrical signal to the outside with the light-receiving unit facing upward, An electrode 804 at the inner periphery of the recess 802a on the upper surface of the package 802 and an electrode formed at the periphery of the surface of the solid-state imaging device 803 are electrically connected by a thin metal wire 805 such as aluminum (Al) or gold (Au) by a wire bonding method. In order to protect the solid-state imaging device 803, the upper opening portion of the ceramic package 802 is sealed in a lid shape with quartz glass 806 for sealing.
[0005]
Hereinafter, the operation of the conventional solid-state imaging device configured as described above will be described.
[0006]
As shown in FIG. 8, incident light 807 when a subject or the like is photographed passes through a sealing quartz glass 806 provided on the upper surface of the ceramic package 802 and enters the solid-state image sensor 803. In the light receiving area on the surface of the solid-state imaging device 803, although it varies depending on the type, 200,000 to 400,000 light receiving portions (not shown) called photodiodes are formed. Recently, the light receiving sensitivity has decreased due to the miniaturization of the light receiving portion itself, and a microlens made of resin is formed on the light receiving portion in order to increase the light receiving sensitivity. That is, the incident light 807 passes through the quartz glass 806, is collected by the microlens on the surface of the light receiving area of the solid-state image sensor 802, enters the light receiving unit, is converted into an electrical signal, and is processed as image data.
[0007]
Next, a conventional method for manufacturing a solid-state imaging device will be described with reference to the drawings. 9A to 9C are cross-sectional views illustrating a conventional method for manufacturing a solid-state imaging device.
[0008]
9A to 9C, a conventional solid-state imaging device manufacturing method includes a solid-state imaging device 803 in a recess 802a on the upper surface of a ceramic package 802 having a terminal group 801 that outputs an electrical signal to the outside. The first step of mounting the light receiving image on the upper side of the ceramic package 802, the electrode 804 on the inner periphery of the recess 802a on the upper surface of the ceramic package 802, and the electrode formed on the periphery of the surface of the solid-state imaging device 803 using In order to protect the solid-state imaging device 3, a second step of electrically connecting with the fine metal wire 805 and a third step of sealing the upper opening portion of the ceramic package 802 in a lid shape with the quartz glass 806 for sealing. Process.
[0009]
The operation of the method for manufacturing the conventional solid-state imaging device configured as described above will be described below.
[0010]
First, the die bonding step of the first step will be described with reference to FIG. The solid-state imaging device 803 is mounted on the concave portion 802a on the upper surface of the ceramic package 802 with a device called a dice bonder with the light receiving portion facing upward. The solid-state image sensor 803 and the ceramic package 802 are fixed using a conductive adhesive such as a thermosetting silver paste. The conductive adhesive is cured by heating at a temperature of about 150 ° C.
[0011]
Next, the wire bonding process of a 2nd process is demonstrated with reference to FIG. 9 (B). After the die bonding process, the electrode 804 in the inner periphery of the recess 802a on the upper surface of the ceramic package 802 and the electrode formed in the periphery of the surface of the solid-state imaging device 803 are made of gold (Au) or aluminum (Al) metal by a wire bonder. Electrical connection is made with a thin wire 805. The inner peripheral electrode 804 of the recess 802a on the upper surface of the ceramic package 802 corresponds to the terminal group 801 that outputs an electrical signal to the outside of the ceramic package 802.
[0012]
Finally, the third sealing step will be described with reference to FIG. After wire bonding, for the purpose of protection from the outside of the solid-state image sensor 803, the upper opening portion of the ceramic package 802 is sealed with a sealing quartz glass 806 to form a solid-state imaging device. In the case of sealing in a lid shape with quartz glass 806, the space between the solid-state imaging device 803 and quartz glass 806 after sealing needs to be kept in vacuum in order to maintain high reliability. Seal with. A thermosetting adhesive is used for sealing, and thereby the quartz glass 806 and the ceramic package 802 are bonded.
[0013]
[Problems to be solved by the invention]
In the configuration of the conventional solid-state imaging device as described above, as an electrical connection method of the solid-state imaging device, the electrode of the ceramic package and the electrode of the solid-state imaging device are connected by a thin metal wire. An area for forming an electrode for wiring a wire is required in the part, and a gap necessary for forming a loop of a fine metal wire must be provided between the solid-state imaging device and the sealing silica glass. For this reason, it is difficult to reduce the size and weight.
[0014]
In addition, as a method for solving these problems in the manufacture of the solid-state image pickup device, a so-called flip-chip method, in which a protrusion is provided on the electrode terminal of the semiconductor element and directly face-down bonded to the circuit board, is applied. A method of forming a circuit on a glass substrate and bonding the solid-state imaging device face down can be considered.
[0015]
Accordingly, the present invention mounts a solid-state image pickup device face-down on a glass substrate and further fixes the solid-state image pickup device and the glass substrate to prevent moisture from reaching the surface of the solid-state image pickup device. An object of the present invention is to provide a solid-state imaging device, a manufacturing method thereof, a reading unit, and an image scanning device that are small and thin and light by sealing only the periphery of the element.
[0016]
[Means for Solving the Problems]
In order to achieve the above object, the invention of claim 1 is directed to a solid-state imaging device in which an imaging element faces a wiring pattern provided on a transparent member in a face-down state.
A projection that is provided on the transparent member so as to face the pixel effective region, and that is formed integrally with the transparent member, so that the pixel effective region of the image sensor and the transparent member are in close contact with each other ; It comprises a bump formed on the outer side of the protrusion for conduction between the wiring pattern of the transparent member and the imaging device, and a sealing resin for bonding the outer peripheral side of the said transparent member and said imaging element A solid-state imaging device.
.
[0017]
According to a second aspect of the present invention, in the solid-state imaging device according to the first aspect, the bump is provided on the imaging element or the wiring pattern, and is formed on at least one of the imaging element and the transparent member. It is characterized in that the height of the protruding portion is almost equal.
[0018]
According to a third aspect of the invention, in the solid-state imaging device according to the first or second aspect, the sealing resin is opaque.
[0019]
According to a fourth aspect of the present invention, there is provided a method for manufacturing a solid-state imaging device in which the imaging element faces a wiring pattern provided on the transparent member in a face-down state.
The pixel effective area of the image sensor and the transparent member are provided on the transparent member so as to face the pixel effective area, and are brought into close contact with each other through a protrusion formed integrally with the transparent member . In addition, the image sensor and the wiring pattern of the transparent member are electrically connected by a bump provided outside the protrusion , and then bonded to the outer periphery of the image sensor and the transparent member. A method of manufacturing a solid-state imaging device, wherein a resin is applied and then a sealing resin is cured.
[0020]
According to a fifth aspect of the present invention, in the method for manufacturing a solid-state imaging device according to the fourth aspect, the sealing resin is opaque.
[0021]
The invention according to claim 6 is an image reading unit using the solid-state imaging device according to any one of claims 1 to 3.
[0022]
A seventh aspect of the invention is an image scanning apparatus using the image reading unit of the sixth aspect.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a diagram showing a method for manufacturing a solid-state imaging device according to the first embodiment of the present invention.
As shown in FIG. 1C, this solid-state imaging device includes an integrated circuit that converts optical information such as a line CCD and an area CCD into an electrical signal, and includes a CCD bare chip 75 that is a solid-state imaging device, and a CCD bare chip 75. A glass substrate 71, which is a transparent member arranged in a face-down state, is arranged with a wiring pattern 73 for electrical connection facing the circuit forming surface, a pixel effective area 75a of the CCD bare chip 75, and the glass substrate 71. A protrusion 71 a of the glass substrate 71 to be in close contact, and a bump 74 that conducts between the CCD bare chip 75 and the wiring pattern 73 of the glass substrate 71 are provided. In this embodiment, the bump 74 is provided on the CCD bare chip 75 side. However, the bump 74 may be provided on the glass substrate 71 side.
[0024]
The CCD bare chip 75 is formed by forming a circuit on a silicon wafer and cutting it to a required size. Since the flatness of the pixel portion is required when mounted, the CCD bare chip 75 is formed with the required flatness. Yes. Further, this CCD bare chip 75 is adversely affected by dust, dew condensation and the like due to the external atmosphere, and therefore needs to be shielded from the external atmosphere.
[0025]
As described above, the glass substrate 71 has a protrusion 71a having a height C on the side facing the CCD bare chip 75, that is, on the wiring pattern 73 side for electrical connection. The protrusion 71 a is formed so as to include a pixel effective area on the glass substrate 71 side corresponding to the pixel effective area 75 a of the CCD bare chip 75. That is, it is formed in a size that does not block the light beam incident on the pixel effective area 75 a of the CCD bare chip 75.
[0026]
The glass substrate 71 is made of a member having a high light transmittance, and the flatness of the portion that is in contact with and fixed to the pixel of the CCD bare chip 75 is formed to a required flatness.
The glass substrate 71 is provided with a wiring pattern 73 as an electric circuit on the surface on which the CCD bare chip 75 is mounted.
In the present embodiment, the glass substrate 71 is used as the transparent member. However, in addition to the glass substrate, the glass substrate 71 may be composed of a member having high light transmittance such as plastic for lenses.
[0027]
The bump 74 has a protrusion shape for establishing electrical connection between the CCD bare chip 75 and the wiring pattern 73 of the glass substrate 71, and its height A is substantially equal to the height C of the protrusion 71a. Thereby, electrical conduction between the CCD bare chip 75 and the electric circuit of the glass substrate 71 can be ensured, and the flatness of the CCD bare chip 75 can be maintained.
[0028]
The periphery of the bump 74 is sealed with a sealing resin S2. Therefore, the bump 74 is also sealed. At this time, a space S is formed inside the bump 74.
[0029]
The sealing resin S2 may be transparent, but need not be transparent. In this embodiment, an opaque resin is used. By using such an opaque resin, it is possible to prevent unnecessary light from entering the pixel effective area 75a of the CCD bare chip 75, so that the image quality is improved. Furthermore, since it is not necessary to use an expensive transparent resin, it is advantageous in terms of cost compared to the case where a transparent resin is used. The sealing resin S2 is preferably one having a low coefficient of thermal expansion.
[0030]
In the present embodiment, the sealing resin S2 is an opaque resin, but may be an ultraviolet curable adhesive, another photocurable adhesive, or another transparent adhesive. For example, an adhesive having high optical properties such as balsam, epoxy resin, fluorine resin, silicon, or the like can be used.
The pixel effective area 75a is an area on the image sensor provided with a photocell array (a circuit portion for reading an image of the image sensor).
[0031]
In order to manufacture the solid-state imaging device as described above, first, as shown in FIG. 1A, the CCD bare chip 75 is opposed to the surface on the side of the wiring pattern 73 provided on the glass substrate 71 in a face-down state. .
[0032]
Next, as shown in FIG. 1B, the CCD bare chip 75 and the protrusion 71 a of the glass substrate 71 are in close contact with each other, and the CCD bare chip 75 and the wiring pattern 73 of the glass substrate 71 are electrically connected by the bumps 74. Then, the CCD bare chip 75 and the glass substrate 71 are brought close to a predetermined distance to cover the pixel effective area 75a.
[0033]
Thereafter, as shown in FIG. 1C, the outer side of the bump 74, that is, the outer periphery of the glass substrate 71 is covered with the sealing resin S2, and the bump 74 and the inner side of the bump 74 are sealed. The glass substrate 71 is connected. That is, the sealing resin S2 is filled around the entire periphery of the pixel effective area 75a including the bumps 74 that are in the conductive state and cured.
[0034]
FIG. 5 is a perspective view of the solid-state imaging device of FIG. 1, and the solid-state imaging device as shown in FIG. 5 is manufactured as described above. In FIG. 5, reference numeral 77 denotes an FPC (flexible wiring board) connected to the wiring pattern 73, and reference numeral L denotes incident light from the imaging lens.
[0035]
FIG. 2 is a diagram showing a method for manufacturing a solid-state imaging device according to the second embodiment of the present invention.
As shown in FIG. 2C, the solid-state imaging device includes an integrated circuit that converts optical information such as a line CCD and an area CCD into an electrical signal, and includes a CCD bare chip 75 that is a solid-state imaging device, and a CCD bare chip 75. A glass substrate 71, which is a transparent member arranged in a face-down state, is arranged with a wiring pattern 73 for electrical connection facing the circuit forming surface, a pixel effective area 75a of the CCD bare chip 75, and the glass substrate 71. A protrusion 75 b including the pixel effective area 75 a of the CCD bare chip 75 to be in close contact, and a bump 74 that conducts between the CCD bare chip 75 and the wiring pattern 73 of the glass substrate 71 are provided. In this embodiment, the bump 74 is provided on the CCD bare chip 75 side. However, the bump 74 may be provided on the glass substrate 71 side.
[0036]
The CCD bare chip 75 is formed by forming a circuit on a silicon wafer and cutting it to a required size. Since the flatness of the pixel portion is required when mounted, the tip surface of the protrusion 75b is required. It is formed with flatness. Further, this CCD bare chip 75 is adversely affected by dust, dew condensation and the like due to the external atmosphere, and therefore needs to be shielded from the external atmosphere.
[0037]
As described above, the CCD bare chip 75 has a protrusion 75b having a height C on the side facing the glass substrate 71, that is, on the pixel effective region 75a side. The protrusion 75b is formed so as to include the pixel effective area 75a of the CCD bare chip 75.
[0038]
The glass substrate 71 is made of a member having a high light transmittance, and the flatness of the portion that is in contact with and fixed to the pixel of the CCD bare chip 75 is formed to a required flatness.
The glass substrate 71 is provided with a wiring pattern 73 as an electric circuit on the surface on which the CCD bare chip 75 is mounted.
In the present embodiment, the glass substrate 71 is used as the transparent member. However, in addition to the glass substrate 71, a member having a high light transmittance such as a lens plastic may be used.
[0039]
The bump 74 has a protruding shape for establishing electrical connection between the CCD bare chip 75 and the wiring pattern 73 of the glass substrate 71, and its height A is substantially equal to the height C of the protruding portion 75b. Thereby, electrical conduction between the CCD bare chip 75 and the electric circuit of the glass substrate 71 can be ensured, and the flatness of the CCD bare chip 75 can be maintained.
[0040]
The periphery of the bump 74 is sealed with a sealing resin S2. Therefore, the bump 74 is also sealed.
The sealing resin S2 may be transparent, but need not be transparent. In this embodiment, an opaque resin is used. By using such an opaque resin, it is possible to prevent unnecessary light from entering the pixel effective area 75a of the CCD bare chip 75, so that the image quality is improved. Furthermore, since it is not necessary to use an expensive transparent resin, it is advantageous in terms of cost compared to the case where a transparent resin is used. The sealing resin S2 is preferably one having a low coefficient of thermal expansion.
[0041]
In the present embodiment, the sealing resin S2 is an opaque resin, but may be an ultraviolet curable adhesive, another light curable adhesive, or another transparent adhesive. For example, an adhesive having high optical properties such as balsam, epoxy resin, fluorine resin, silicon, or the like can be used.
The pixel effective area 75a is an area on the image sensor provided with a photocell array (a circuit portion for reading an image of the image sensor).
[0042]
In order to manufacture the solid-state imaging device as described above, first, as shown in FIG. 2A, the CCD bare chip 75 is opposed to the surface on the side of the wiring pattern 73 provided on the glass substrate 71 in a face-down state. .
[0043]
Next, as shown in FIG. 2B, the projection 75 b of the CCD bare chip 75 and the glass substrate 71 are in close contact, and the CCD bare chip 75 and the wiring pattern 73 of the glass substrate 71 are electrically connected by the bumps 74. Then, the CCD bare chip 75 and the glass substrate 71 are brought close to a predetermined distance to cover the pixel effective area 75a.
[0044]
After that, as shown in FIG. 2C, the outside of the bump 74, that is, the outer periphery of the glass substrate 71 is covered with the sealing resin S2 to seal the bump 74 and the inside of the bump 74, and the CCD bare chip 75 and The glass substrate 71 is connected. That is, the sealing resin S2 is filled around the entire periphery of the pixel effective area 75a including the bumps 74 that are in the conductive state and cured.
[0045]
FIG. 3 is a diagram showing a method for manufacturing a solid-state imaging device according to the third embodiment of the present invention.
This third embodiment is different from the first embodiment of FIG. 1 only in that the periphery of the protrusion 71a of the glass substrate 71 is formed in a groove shape, and the other configurations are the same.
[0046]
FIG. 4 is a diagram showing a method for manufacturing a solid-state imaging device according to the fourth embodiment of the present invention.
This fourth embodiment differs from the second embodiment of FIG. 2 only in that a concave portion is formed in the portion of the glass substrate 71 corresponding to the protrusion of the CCD bare chip 75, and the other configurations are the same.
[0047]
FIG. 6 is a perspective view of an image reading unit using the solid-state imaging device of the present invention.
As shown in FIG. 6, the image reading unit 1 includes a lens 3 that is an optical element having an edge surface 3a that is a side surface around a transmission surface through which light rays as image light from the document surface are transmitted, and an edge surface 3a. The first mounting surface 5a and the first mounting surface 5a opposite to each other have an angle different from the first mounting surface 5a, in this embodiment, the second mounting surface 5b formed at 90 degrees with respect to the first mounting surface 5a. In addition, an intermediate holding member 5 that joins the lens 3 and the housing 2 and a housing 2 that is a base member having an attachment surface 2c facing the second attachment surface 5b are provided.
In the image reading unit 1, the housing 2 and the lens 3 whose position is adjusted with respect to the housing 2 are bonded and fixed via an intermediate holding member 5.
[0048]
The lens 3 includes a flat surface 3b arranged on the same diameter on the edge surface 3a. The flat surface 3b is formed by cutting, grinding, or the like, and is polished as necessary. By forming the flat surface 3b in this way, the adhesion area between the intermediate holding member 5 and the first attachment surface 5a can be increased, and the fixing strength can be increased.
[0049]
The housing 2 fixes the lens 3 and the solid-state imaging device 7 in an arrangement relationship adjusted after adjustment. The housing 2 includes an arcuate groove 2b, a planar attachment surface 2c adjacent to the arcuate groove 2b, an attachment surface 2d for attaching the solid-state image pickup device 7, lenses 3, 6 and the like. A light shielding cover 2 a that shields light between the system and the solid-state imaging device 7 is provided. By providing the light shielding cover 2a, the influence of disturbance light or the like can be prevented and a good image can be obtained. The casing 2 is fixed to a predetermined position of an image scanning apparatus such as a copying machine, which will be described later, by fixing means such as screw tightening, caulking, adhesion, and welding.
[0050]
As the material used for the intermediate holding member 5, a member having a high light (ultraviolet) transmittance, for example, ARTON, ZEONEX, or polycarbonate is used.
Due to the surface tension of the adhesive, the intermediate holding member 5 moves so that both adhesive surfaces slide relative to the movement of the lens position due to lens adjustment, and can follow the movement of the lens 3.
[0051]
By making the first mounting surface 5a and the second mounting surface 5b of the intermediate holding member 5, that is, both adhesive surfaces orthogonal, the position of the lens 3 can be adjusted in six axes, and each axis can be adjusted independently.
[0052]
As shown in FIG. 6, when the adhesive is cured by arranging the two intermediate holding members 5 so that the flat surface 3 b of the edge 3 a of the lens 3 that is the optical element side adhesive surface is opposed to each other. The influence of curing shrinkage can be reduced.
[0053]
As shown in FIG. 6, by providing translucent ribs 5 c between both adhesive surfaces of the intermediate holding member 5, the intermediate holding member does not increase light loss when curing the photocurable adhesive. The strength of 5 can be increased.
[0054]
Since the first mounting surface 5a that is the lens-side fixing surface of the intermediate holding member 5 and the second mounting surface 5b that is the holding-member-side fixing surface are perpendicular to each other, X, Y, Z, α, β, γ can be adjusted independently of each other in the position adjustment direction.
[0055]
Considering the case where the intermediate holding member 5 is connected to the adjustment lens 3 and the housing 2 by an ultraviolet curable adhesive, first, in the case of adjustment in the X and Z directions, the lens 3 and the intermediate holding member 5 Is adjusted by sliding on the housing via the housing mounting surface 2c which is the holding member side fixed surface of the housing 2.
Further, in the case of the adjustment in the Y direction, the moving lens 3 is adjusted by sliding the first mounting surface 5 a that is the lens side fixed surface of the intermediate holding member 5.
[0056]
Hereinafter, α, β, and γ are adjusted in the same manner. Furthermore, when the optical element is a lens, it has a spherical shape centered on the optical axis, so that it is possible to correct the optical axis tilt caused by a processing error of the lens even if it is rotated around the optical axis (γ axis). No (only the optical axis rotates). Therefore, adjustment around the γ axis is not necessary.
[0057]
FIG. 7 is a schematic configuration diagram of a multifunction digital image forming apparatus as an example of an image scanning apparatus having an image reading unit using the solid-state imaging device of the present invention.
As shown in FIG. 7, the image forming apparatus includes an automatic document feeder 101, a reading unit 150, a writing unit 157, a paper feeding unit 130, and a post-processing unit 140. The automatic document feeder 101 automatically feeds a document onto the contact glass 106 of the reading unit 150, and automatically discharges the document that has been read. The reading unit 150 illuminates a document set on the contact glass 106 and reads it by the CCD 154 which is a photoelectric conversion device, and the writing unit 157 forms an image on the photoconductor 115 according to the image signal of the read document. Then, the image is transferred and fixed on the transfer sheet fed from the sheet feeding unit 130. After the fixing is completed, the transfer paper is discharged to the post-processing unit 140, and desired post-processing such as sorting and stapling is performed.
[0058]
First, the reading unit 150 includes a contact glass 106 on which an original is placed and an optical scanning system. The optical scanning system includes an exposure lamp 151, a first mirror 152, a lens 153, a CCD image sensor 154, a second mirror 155, and a second mirror. It consists of 3 mirrors 156 and the like. The exposure lamp 151 and the first mirror 152 are fixed on a first carriage (not shown), and the second mirror 155 and the third mirror 156 are fixed on a second carriage (not shown). When reading a document, the first carriage and the second carriage are mechanically scanned at a relative speed of 2: 1 so that the optical path length does not change. This optical scanning system is driven by a scanner drive motor (not shown).
[0059]
The document image is read by the CCD image sensor 154, converted from an optical signal to an electrical signal, and processed. When the lens 153 and the CCD image sensor 154 are moved in the left-right direction in FIG. 7, the image magnification can be changed. That is, positions in the left-right direction in the drawings of the lens 153 and the CCD image sensor 154 are set corresponding to the designated magnification.
[0060]
The writing unit 157 includes a laser output unit 158, an imaging lens 159, and a mirror 160. Inside the laser output unit 158, a laser diode that is a laser light source and a polygon mirror that is rotated at a constant speed by a motor are provided. Yes.
[0061]
The laser light emitted from the laser output unit 158 is deflected by the polygon mirror that rotates at a constant speed, passes through the imaging lens 159, is folded back by the mirror 160, and is focused on the surface of the photoreceptor to form an image. The deflected laser light is the photosensitive member 115.
Is scanned in the so-called main scanning direction orthogonal to the direction in which the image signal rotates, and the image signal output by the MSU 606 of the image processing unit to be described later is recorded line by line. An image, that is, an electrostatic latent image is formed on the surface of the photosensitive member by repeating main scanning at a predetermined cycle corresponding to the rotational speed of the photosensitive member 115 and the recording density.
[0062]
In this way, the laser light output from the writing unit 157 is applied to the image forming system photoconductor 115, but a main scanning synchronization signal is generated at the irradiation position of the laser light near one end of the photoconductor 115 (not shown). A beam sensor is arranged. Based on the main scanning synchronization signal output from the beam sensor, control of image recording timing in the main scanning direction and generation of control signals for input / output of image signals, which will be described later, are performed.
[0063]
The present invention is not limited to the above embodiment. For example, in the above embodiment, the case where the protrusion is provided only on the glass substrate side and the case where the protrusion is provided only on the CCD bare chip side have been described. However, the protrusion is provided on both the glass substrate and the CCD bare chip. Also good. In the above embodiment, the case and the imaging lens shown in FIG. 6 are used. However, the imaging lens system incorporated in the lens barrel is installed on the V block formed in the lens barrel. The solid-state imaging device of the present invention can also be used in a conventionally known image reading unit that adjusts the positional relationship between the entire imaging lens system and the solid-state imaging device. That is, various modifications can be made without departing from the scope of the present invention.
[0064]
【The invention's effect】
As described above, according to the present invention, the solid-state imaging device is mounted face-down on the glass substrate, and the solid-state imaging device and the glass substrate are sealed to reach the surface of the solid-state imaging device. Since the pixel effective area of the solid-state image sensor and the glass substrate are brought into close contact with each other, a good image can be obtained because the pixel effective area is not covered with the resin layer. Furthermore, the solid-state imaging device can be reduced in size, thickness, and weight.
[Brief description of the drawings]
FIG. 1 is a diagram showing a method for manufacturing a solid-state imaging device according to a first embodiment of the present invention.
FIG. 2 is a diagram illustrating a method for manufacturing a solid-state imaging device according to a second embodiment of the present invention.
FIG. 3 is a diagram illustrating a method for manufacturing a solid-state imaging device according to a third embodiment of the present invention.
FIG. 4 is a diagram illustrating a method for manufacturing a solid-state imaging element according to a fourth embodiment of the present invention.
5 is a perspective view of the solid-state imaging device in FIG. 1. FIG.
FIG. 6 is a perspective view of an image reading unit using the solid-state imaging device of the present invention.
FIG. 7 is a schematic diagram of an image forming apparatus including an image reading unit using the solid-state imaging device of the present invention.
FIG. 8 is a cross-sectional view showing a conventional solid-state imaging device.
FIG. 9 is a cross-sectional view illustrating a conventional method for manufacturing a solid-state imaging device.
[Explanation of symbols]
7 Solid-state imaging device 71 Glass substrate (transparent member)
71a Protrusion 73 Wiring pattern 74 Bump 75a Pixel effective area 75b Protrusion S2 Sealing resin

Claims (7)

In the solid-state imaging device facing the wiring pattern provided on the transparent member with the imaging element facing down,
A protrusion that is provided on the transparent member so as to face the pixel effective region, and that is formed integrally with the transparent member, so that the pixel effective region of the image sensor and the transparent member are in close contact with each other ; It comprises a bump formed on the outer side of the protrusion for conduction between the wiring pattern of the transparent member and the imaging device, and a sealing resin for bonding the outer peripheral side of the said transparent member and said imaging element A solid-state image pickup device.   The height of the bump provided in the image sensor or the wiring pattern is substantially equal to a height of a protrusion formed on at least one of the image sensor and the transparent member. Solid-state imaging device.   The solid-state imaging device according to claim 1, wherein the sealing resin is opaque. In the manufacturing method of the solid-state imaging device in which the imaging element faces the wiring pattern provided on the transparent member in a face-down state,
The pixel effective area of the image sensor and the transparent member are provided on the transparent member so as to face the pixel effective area, and are brought into close contact with each other via a protrusion formed integrally with the transparent member . In addition, the image sensor and the wiring pattern of the transparent member are electrically connected by a bump provided outside the protrusion , and then bonded to the outer periphery of the image sensor and the transparent member. A method of manufacturing a solid-state imaging device, wherein a resin is applied and thereafter a sealing resin is cured.   The method for manufacturing a solid-state imaging device according to claim 4, wherein the sealing resin is opaque.   An image reading unit using the solid-state imaging device according to claim 1.   An image scanning apparatus using the image reading unit according to claim 6.

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