JP4148517B2 - 微細構造 - Google Patents
微細構造 Download PDFInfo
- Publication number
- JP4148517B2 JP4148517B2 JP2003560933A JP2003560933A JP4148517B2 JP 4148517 B2 JP4148517 B2 JP 4148517B2 JP 2003560933 A JP2003560933 A JP 2003560933A JP 2003560933 A JP2003560933 A JP 2003560933A JP 4148517 B2 JP4148517 B2 JP 4148517B2
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- JP
- Japan
- Prior art keywords
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- microstructure
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- Prior art date
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- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/06—Probe tip arrays
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/08—Probe characteristics
- G01Q70/10—Shape or taper
- G01Q70/12—Nanotube tips
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/16—Probe manufacture
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1409—Heads
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1418—Disposition or mounting of heads or record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/724—Devices having flexible or movable element
- Y10S977/732—Nanocantilever
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/724—Devices having flexible or movable element
- Y10S977/733—Nanodiaphragm
Description
Claims (25)
- 微細構造を形成する方法であって、基板上にシード材料を被着させることと、前記シード材料からナノチューブを成長させることと、前記基板上に微細構造材料を被着させて、前記微細構造材料中に前記ナノチューブを埋め込むことと、前記基板を取り除いて前記微細構造を取り出すこととを含む、方法。
- 前記微細構造を取り出す前に、前記微細構造材料を整形することを含む、請求項1に記載の方法。
- 前記微細構造材料が、ポリマー、誘電体材料、金属およびポリシリコンのいずれか1つを含む、請求項1または2に記載の方法。
- 前記基板が、シリコン、ガラス、石英、セラミックおよびプラスチックのいずれか1つから形成される、請求項1ないし3のいずれかに記載の方法。
- 前記シード材料が、第1および第2前駆体材料を交互に並べた層を含む、請求項1ないし4のいずれかに記載の方法。
- 前記第1前駆体材料がフラーレン材料を含み、前記第2前駆体材料が場に敏感な材料を含む、請求項5に記載の方法。
- 前記フラーレン材料が、カーボン60およびカーボン82のいずれか1つを含み、前記場に敏感な材料が、ニッケル、コバルト、鉄およびモリブデンのいずれか1つを含む、請求項6に記載の方法。
- 前記フラーレン材料がカーボン60を含み、前記場に敏感な材料がニッケルを含む、請求項7に記載の方法。
- 前記ナノチューブを成長させることが、真空状態で前記基板を加熱することと、前記基板に場を印加することとを含む、請求項1ないし8のいずれかに記載の方法。
- 前記真空条件が、10−5mbarよりも高い酸素圧を含む、請求項9に記載の方法。
- 前記加熱することが、前記基板の温度を900〜1000℃に上げることを含む、請求項9または10に記載の方法。
- 前記印加場が磁場を含む、請求項9ないし11のいずれかに記載の方法。
- 前記磁場を前記基板の表面に直交して印加する、請求項12に記載の方法。
- 前記磁場が50ガウス以上である、請求項13に記載の方法。
- 前記印加場が電場を含む、請求項9ないし11のいずれかに記載の方法。
- 前記電場を前記基板の表面に直交して印加する、請求項15に記載の方法。
- 前記取り出すことが、前記カンチレバー材料を被着させる前に前記基板の表面上に犠牲層を被着させることと、前記微細構造材料を被着させた後で電解液中に前記犠牲層を浸すこととを含む、請求項1ないし16のいずれかに記載の方法。
- 前記犠牲層が陽極副層および陰極副層を備える、請求項17に記載の方法。
- 前記陽極副層がアルミニウム、亜鉛、クロム、鉄およびコバルトのいずれか1つを含み、前記陰極副層が貴金属を含む、請求項18に記載の方法。
- 前記陰極副層が、金、パラジウム、白金、銀および銅のいずれかを含む、請求項19に記載の方法。
- 前記シード材料を被着させることが、前記基板上にフォトレジスト層を被着させることと、前記レジスト層中に開口を形成することと、レジスト層で前記基板をマスキングして、前記開口によって画定された前記基板上の部位に前記シード材料を配置することと、前記レジスト層を除去して余分なシード材料を取り除くこととを含む、請求項1ないし20のいずれかに記載の方法。
- 前記開口を形成することが、前記レジスト層をアンダー・エッチングして、前記レジスト層中にキャビティを生成することを含む、請求項21に記載の方法。
- 基板中にチップ・イメージを形成して、前記微細構造材料を受ける型を生成することを含む、請求項1ないし21のいずれかに記載の方法。
- 前記チップ・イメージを形成することが、前記基板上にフォトレジスト層を被着させることと、前記フォトレジスト層中に開口を形成することと、前記フォトレジスト層の下で前記基板をアンダー・エッチングして、前記チップ・イメージを生成することとを含む、請求項23に記載の方法。
- 前記シード材料を被着させることが、前記レジスト層で前記基板をマスキングして、前記チップ・イメージの頂点に前記シード材料を設けることと、前記レジスト層を除去して余分なシード材料を取り除くこととを含む、請求項24に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02405021 | 2002-01-15 | ||
PCT/IB2002/004853 WO2003060923A1 (en) | 2002-01-15 | 2002-11-21 | Microstructures |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005529754A JP2005529754A (ja) | 2005-10-06 |
JP4148517B2 true JP4148517B2 (ja) | 2008-09-10 |
Family
ID=8185788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003560933A Expired - Fee Related JP4148517B2 (ja) | 2002-01-15 | 2002-11-21 | 微細構造 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7351604B2 (ja) |
EP (1) | EP1466333B1 (ja) |
JP (1) | JP4148517B2 (ja) |
KR (1) | KR100633494B1 (ja) |
CN (1) | CN1599939B (ja) |
AT (1) | ATE514049T1 (ja) |
AU (1) | AU2002348934A1 (ja) |
TW (1) | TWI229050B (ja) |
WO (1) | WO2003060923A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111640566B (zh) * | 2020-05-20 | 2021-09-21 | 杭州三炻磁性材料有限公司 | 恒压恒磁钐钴粉末压制的工艺方法 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7409488B2 (en) * | 2002-07-23 | 2008-08-05 | International Business Machines Inc | Data processing system |
US7135728B2 (en) * | 2002-09-30 | 2006-11-14 | Nanosys, Inc. | Large-area nanoenabled macroelectronic substrates and uses therefor |
EP2194026A1 (en) | 2002-09-30 | 2010-06-09 | Nanosys, Inc. | Large-area nanoenabled macroelectronic substrates and uses therefor |
FR2862156B1 (fr) * | 2003-11-06 | 2007-01-05 | Commissariat Energie Atomique | Dispositif d'enregistrement de donnees a micro-pointes conductrices et procede de fabrication d'un tel dispositif |
US8075863B2 (en) | 2004-05-26 | 2011-12-13 | Massachusetts Institute Of Technology | Methods and devices for growth and/or assembly of nanostructures |
FR2876831B1 (fr) | 2004-10-15 | 2007-02-02 | Commissariat Energie Atomique | Dispositif d'enregistrement de donnees comportant des nanotubes de carbone inclines et procede de fabrication |
JP2006125846A (ja) * | 2004-10-26 | 2006-05-18 | Olympus Corp | カンチレバー |
DE102005043974B4 (de) * | 2005-09-15 | 2010-04-29 | Team Nanotec Gmbh | Mikromechanischer Abtastsensor |
JP4614280B2 (ja) * | 2005-10-25 | 2011-01-19 | セイコーインスツル株式会社 | 計測プローブ及び計測プローブの製造方法 |
DE102006004922B4 (de) * | 2006-02-01 | 2008-04-30 | Nanoscale Systems Nanoss Gmbh | Miniaturisiertes Federelement und Verfahren zu dessen Herstellung, Balkensonde, Rasterkraftmikroskop sowie Verfahren zu dessen Betrieb |
EP2077249A1 (en) | 2008-01-06 | 2009-07-08 | Universiteit Twente | A method for making a 3D nanostructure having a nanosubstructure, and an insulating pyramid having a metallic tip, a pyramid having a nano-apertures and horizontal and/or vertical nanowires obtainable by this method |
US8104093B2 (en) | 2008-03-28 | 2012-01-24 | Empire Technology Development Llc | Magnetic sensor and scanning microscope |
US8614435B2 (en) | 2009-11-03 | 2013-12-24 | International Business Machines Corporation | Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices |
US9334571B2 (en) * | 2012-06-29 | 2016-05-10 | Regents Of The University Of Minnesota | Method of forming individual metallic microstructures |
NL2019090B1 (en) * | 2017-06-19 | 2018-12-27 | Smarttip B V | A method of providing a plurality of through-holes in a layer of structural material |
US11932539B2 (en) | 2020-04-01 | 2024-03-19 | Graphul Industries LLC | Columnar-carbon and graphene-plate lattice composite |
KR102404158B1 (ko) * | 2020-07-20 | 2022-05-31 | 한국화학연구원 | 플라즈몬 나노 구조체 제조를 위한 나노팁 인덴테이션 리소그래피 및 이에 의해 제조된 플라즈몬 나노 구조체 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4405768A1 (de) | 1994-02-23 | 1995-08-24 | Till Keesmann | Feldemissionskathodeneinrichtung und Verfahren zu ihrer Herstellung |
JPH08327636A (ja) * | 1995-05-31 | 1996-12-13 | Olympus Optical Co Ltd | Afmカンチレバー及びその製造方法 |
FR2739494B1 (fr) * | 1995-09-29 | 1997-11-14 | Suisse Electronique Microtech | Procede de fabrication de pieces de micromecanique ayant une partie en diamant constituee au moins d'une pointe, et pieces de micromecanique comportant au moins une pointe en diamant |
EP0927331B1 (en) * | 1996-08-08 | 2004-03-31 | William Marsh Rice University | Macroscopically manipulable nanoscale devices made from nanotube assemblies |
JP3497740B2 (ja) * | 1998-09-09 | 2004-02-16 | 株式会社東芝 | カーボンナノチューブの製造方法及び電界放出型冷陰極装置の製造方法 |
JP2002526354A (ja) * | 1998-09-28 | 2002-08-20 | ザイデックス コーポレイション | Memsデバイスの機能的要素としてのカーボンナノチューブを製造するための方法 |
JP3884887B2 (ja) * | 1999-08-27 | 2007-02-21 | 株式会社ルネサステクノロジ | 描画用探針及びその製作方法 |
US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
JP4073603B2 (ja) * | 2000-03-30 | 2008-04-09 | エスアイアイ・ナノテクノロジー株式会社 | 走査型プローブ顕微鏡用プローブ及びそれを用いた走査型プローブ顕微鏡走査方法 |
CN100457609C (zh) * | 2000-11-13 | 2009-02-04 | 国际商业机器公司 | 单壁碳纳米管的制造方法及应用 |
JP3925610B2 (ja) * | 2001-02-13 | 2007-06-06 | 喜萬 中山 | 発熱プローブ及び発熱プローブ装置 |
JP3832402B2 (ja) * | 2002-08-12 | 2006-10-11 | 株式会社日立製作所 | カーボンナノチューブを有する電子源とそれを用いた電子顕微鏡および電子線描画装置 |
-
2002
- 2002-11-21 US US10/501,516 patent/US7351604B2/en not_active Expired - Lifetime
- 2002-11-21 CN CN028243080A patent/CN1599939B/zh not_active Expired - Lifetime
- 2002-11-21 WO PCT/IB2002/004853 patent/WO2003060923A1/en active Application Filing
- 2002-11-21 JP JP2003560933A patent/JP4148517B2/ja not_active Expired - Fee Related
- 2002-11-21 AT AT02781555T patent/ATE514049T1/de not_active IP Right Cessation
- 2002-11-21 EP EP02781555A patent/EP1466333B1/en not_active Expired - Lifetime
- 2002-11-21 KR KR1020047001570A patent/KR100633494B1/ko not_active IP Right Cessation
- 2002-11-21 AU AU2002348934A patent/AU2002348934A1/en not_active Abandoned
-
2003
- 2003-01-10 TW TW092100515A patent/TWI229050B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111640566B (zh) * | 2020-05-20 | 2021-09-21 | 杭州三炻磁性材料有限公司 | 恒压恒磁钐钴粉末压制的工艺方法 |
Also Published As
Publication number | Publication date |
---|---|
ATE514049T1 (de) | 2011-07-15 |
KR100633494B1 (ko) | 2006-10-13 |
KR20040066086A (ko) | 2004-07-23 |
TW200303286A (en) | 2003-09-01 |
TWI229050B (en) | 2005-03-11 |
EP1466333B1 (en) | 2011-06-22 |
US20050130551A1 (en) | 2005-06-16 |
CN1599939A (zh) | 2005-03-23 |
WO2003060923A1 (en) | 2003-07-24 |
AU2002348934A1 (en) | 2003-07-30 |
JP2005529754A (ja) | 2005-10-06 |
EP1466333A1 (en) | 2004-10-13 |
CN1599939B (zh) | 2010-08-11 |
US7351604B2 (en) | 2008-04-01 |
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