JP4147233B2 - 電子線装置 - Google Patents

電子線装置 Download PDF

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Publication number
JP4147233B2
JP4147233B2 JP2005238300A JP2005238300A JP4147233B2 JP 4147233 B2 JP4147233 B2 JP 4147233B2 JP 2005238300 A JP2005238300 A JP 2005238300A JP 2005238300 A JP2005238300 A JP 2005238300A JP 4147233 B2 JP4147233 B2 JP 4147233B2
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Japan
Prior art keywords
electron beam
hole
pattern
wafer
opening
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Expired - Fee Related
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JP2005238300A
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Japanese (ja)
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JP2006003370A (ja
JP2006003370A5 (enExample
Inventor
都 松井
真理 野副
郭子 高藤
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Hitachi Ltd
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Hitachi Ltd
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Publication of JP2006003370A5 publication Critical patent/JP2006003370A5/ja
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  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2005238300A 2005-08-19 2005-08-19 電子線装置 Expired - Fee Related JP4147233B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005238300A JP4147233B2 (ja) 2005-08-19 2005-08-19 電子線装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005238300A JP4147233B2 (ja) 2005-08-19 2005-08-19 電子線装置

Related Parent Applications (1)

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JP2001084232A Division JP3973372B2 (ja) 2001-03-23 2001-03-23 荷電粒子線を用いた基板検査装置および基板検査方法

Related Child Applications (1)

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JP2008055956A Division JP4728361B2 (ja) 2008-03-06 2008-03-06 荷電粒子線を用いた基板検査装置および基板検査方法

Publications (3)

Publication Number Publication Date
JP2006003370A JP2006003370A (ja) 2006-01-05
JP2006003370A5 JP2006003370A5 (enExample) 2006-05-11
JP4147233B2 true JP4147233B2 (ja) 2008-09-10

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JP2005238300A Expired - Fee Related JP4147233B2 (ja) 2005-08-19 2005-08-19 電子線装置

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JP (1) JP4147233B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170098286A (ko) 2015-01-28 2017-08-29 가부시키가이샤 히다치 하이테크놀로지즈 하전입자선 장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2007086400A1 (ja) * 2006-01-25 2009-06-18 株式会社荏原製作所 試料表面検査方法及び検査装置
JP5117080B2 (ja) 2007-03-07 2013-01-09 株式会社日立ハイテクノロジーズ 試料観察条件設定方法及び装置、並びに試料観察方法及び装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170098286A (ko) 2015-01-28 2017-08-29 가부시키가이샤 히다치 하이테크놀로지즈 하전입자선 장치
US10446359B2 (en) 2015-01-28 2019-10-15 Hitachi High-Technologies Corporation Charged particle beam device

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Publication number Publication date
JP2006003370A (ja) 2006-01-05

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