JP4131792B2 - Laser irradiation apparatus, laser irradiation method, and method for manufacturing crystalline semiconductor film - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a laser beam irradiation method and a laser beam irradiation apparatus (an apparatus including a laser and an optical system for guiding a laser beam output from the laser beam to an irradiation object). Further, the present invention relates to a method for manufacturing a semiconductor device manufactured by including laser irradiation in a process. Note that the semiconductor device here includes an electro-optical device such as a liquid crystal display device and a light-emitting device and an electronic device including the electro-optical device as a component.
[0002]
[Prior art]
In recent years, techniques for obtaining a crystalline semiconductor film by performing laser annealing on a semiconductor film formed over an insulating substrate such as glass to crystallize or improve crystallinity have been widely studied. Note that in this specification, a crystalline semiconductor film refers to a semiconductor film in which a crystallized region exists, and includes a semiconductor film in which the entire surface is crystallized.
[0003]
A glass substrate is less expensive than a synthetic quartz glass substrate and has an advantage that a large-area substrate can be easily manufactured. In addition, the reason why lasers are used favorably for crystallization is that the melting point of the glass substrate is low. The laser can give high energy to the semiconductor film without significantly increasing the temperature of the substrate. In addition, the throughput is significantly higher than heat treatment using an electric furnace.
[0004]
Since a crystalline semiconductor film formed by laser light irradiation has high mobility, a thin film transistor (TFT) is formed using the crystalline semiconductor film, for example, on a single glass substrate. Alternatively, it is used in an active matrix type liquid crystal display device or the like for manufacturing TFTs for pixel portions and driving circuits.
[0005]
As the laser light, laser light oscillated from an excimer laser or the like is often used. The excimer laser has the advantage that it has a large output and can be repeatedly irradiated at a high frequency. Furthermore, the laser light oscillated from the excimer laser has a high absorption coefficient for a silicon film often used as a semiconductor film. Have advantages. For laser light irradiation, the laser light is shaped by an optical system so that the shape at or near the irradiation surface is rectangular, and the laser light is moved (or the irradiation position of the laser light on the irradiation surface). The method of irradiating with relatively moving is highly productive and industrially excellent.
[0006]
[Problems to be solved by the invention]
In recent years, annealing of a semiconductor film using a laser that emits a laser beam having a long wavelength (about 400 nm to 1 μm), such as a solid-state laser whose maximum output is improved, has begun to be performed. However, a laser beam having a long wavelength has a high reflectance and transmittance with respect to the semiconductor film, and the laser beam cannot be used effectively.
[0007]
Further, when laser light is incident on the semiconductor film (irradiated body) perpendicularly, so-called return light is generated that returns the same optical path as that incident on the semiconductor film. The return light becomes a factor that has an adverse effect such as fluctuations in the output and frequency of the laser and destruction of the rod. In order to prevent the return light, an isolator must be installed in the middle of the optical path, but the isolator is a very expensive device. In addition, when the laser light is incident on the semiconductor film from an oblique direction and reflected or transmitted through the semiconductor film, it is necessary to install a damper for absorbing the reflected light and the transmitted light.
[0008]
Thus, if a device for absorbing laser light is installed, the laser irradiation device will be enlarged. In order to install in a clean room where the cost per unit area is high, a device as small as possible is desirable, and the smaller the occupied area of the device, the more advantageous for the design of the production line.
[0009]
Even if the maximum output is improved, it is still low at present, and a plurality of lasers are necessary in consideration of productivity. However, when a plurality of lasers are used, maintenance of individual lasers is very troublesome, for example, because the outputs are the same, and the efficiency is low and the cost also increases.
[0010]
Therefore, an object of the present invention is to provide a method for efficiently irradiating laser light and a laser irradiation apparatus for performing the method even when laser light having a long wavelength is used. Another object is to provide a method for manufacturing a semiconductor device using a semiconductor film obtained by crystallization of a semiconductor film or activation of an impurity element by such a laser irradiation method.
[0011]
[Means for Solving the Problems]
The structure of the invention relating to the laser irradiation apparatus disclosed in this specification is a laser irradiation apparatus including a laser and at least two irradiation surfaces, and the laser light emitted from the laser is a first irradiation surface. The first irradiated object is irradiated on the first irradiated object, and a part of the laser beam is transmitted through the first irradiated object and irradiated on the second irradiated object installed on the second irradiation surface. It is characterized by that.
[0012]
In the above structure, the laser is a continuous wave or pulsed solid laser, a gas laser, or a metal laser. The solid-state laser may be a continuous wave or pulsed YAG laser, YVO _Four Laser, YLF laser, YAlO _Three There are lasers, glass lasers, ruby lasers, alexandride lasers, Ti: sapphire lasers, etc., and the gas lasers include continuous or pulsed KrF excimer lasers, Ar lasers, Kr lasers, CO ₂ Examples of the metal laser include a helium cadmium laser, a copper vapor laser, and a gold vapor laser.
[0013]
In the above structure, the laser beam has a wavelength of 350 nm or more. Therefore, it is desirable that the laser light is converted into a harmonic by a non-linear optical element. For example, a YAG laser is known to emit laser light having a wavelength of 1064 nm as a fundamental wave. The absorption coefficient of the laser light with respect to the silicon film is very low, and it is technically difficult to crystallize an amorphous silicon film which is one of the semiconductor films if this is left as it is. However, this laser beam can be converted to a shorter wavelength by using a nonlinear optical element, and the second harmonic (532 nm) and the third harmonic (355 nm) are desirable as harmonics. Since these harmonics have a higher absorption coefficient than the amorphous silicon film, they can be used for crystallization of the amorphous silicon film.
[0014]
Further, the configuration of the invention relating to the laser irradiation method disclosed in this specification is a laser irradiation method for irradiating at least two or more irradiation surfaces with laser light, and the laser light is installed on the first irradiation surface. The first irradiated body is irradiated, and a part of the laser beam transmitted through the first irradiated body is irradiated to the second irradiated body installed on the second irradiation surface. .
[0015]
In the above structure, the laser is a continuous wave or pulsed solid laser, a gas laser, or a metal laser.
[0016]
In the above structure, the laser beam has a wavelength of 350 nm or more. Therefore, it is desirable that the laser light is converted into a harmonic by a non-linear optical element.
[0017]
In addition, a structure of an invention related to a method for manufacturing a semiconductor device disclosed in this specification is a method for manufacturing a semiconductor device in which at least two substrates on which a semiconductor film is formed are irradiated with laser light, the laser light Is irradiated to the first semiconductor film, and the second semiconductor film is irradiated with a part of the laser light transmitted through the first semiconductor film and the substrate on which the first semiconductor film is formed. It is said.
[0018]
In the above structure, the laser is a continuous wave or pulsed solid laser, a gas laser, or a metal laser.
[0019]
In the above structure, the laser beam has a wavelength of 350 nm or more. Therefore, it is desirable that the laser light is converted into a harmonic by a non-linear optical element.
[0020]
In the above structure, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a flexible substrate, or the like can be used as the substrate. Examples of the glass substrate include a substrate made of glass such as barium borosilicate glass or alumino borosilicate glass. The flexible substrate is a film-like substrate made of PET, PES, PEN, acrylic, or the like. If a semiconductor device is manufactured using the flexible substrate, weight reduction is expected. If a barrier layer such as an aluminum film (AlON, AlN, AlO, etc.), a carbon film (DLC (Diamond Like Carbon), etc.), SiN or the like is formed as a single layer or a multilayer on the surface of the flexible substrate, or the front and back surfaces It is desirable because durability is improved.
[0021]
Since the present invention also utilizes transmitted light of laser light, the laser light can be used very efficiently. In addition, since a device for absorbing laser light is not necessarily required, the device is compact. Therefore, it is suitable for installation in a clean room where the cost per unit area is high, and it is also advantageous for designing a production line. Thus, the present invention can realize cost reduction.
[0022]
Further, the present invention makes it possible to efficiently irradiate a semiconductor film formed on a substrate, and to improve the electrical characteristics of a TFT manufactured using such a semiconductor film. Make it possible. In addition, the operating characteristics and reliability of a semiconductor device manufactured from such a TFT can be improved.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
[Embodiment 1]
An embodiment of the present invention will be described with reference to FIGS.
[0024]
FIG. 1 shows an example of a laser irradiation apparatus of the present invention. Since the laser light oscillated from the laser 101 has a long wavelength, it has a high transmittance with respect to the semiconductor film and the substrate.
[0025]
Then, the laser light condensed by the first lens 102 irradiates the first substrate 110. Since the laser beam has a high transmittance, a part of the laser beam is transmitted through the first substrate 110. Then, the laser light transmitted through the first substrate 110 is condensed by the second lens 103 and the third lens 104 to irradiate the second substrate 111.
[0026]
The first substrate 110 and the second substrate 111 are suspended by jigs 105a and 105b, respectively, and are installed perpendicular to the traveling direction of the laser beam. And each jig 105a, 105b is connected by the jig 105c. Therefore, by moving the jig 105c in the directions indicated by 106, 107, and 108, it is possible to simultaneously irradiate the entire surface of the first substrate 110 and the second substrate 111 or a desired region with laser light. Further, by moving in the direction indicated by 109, it is possible to obtain a desired beam size on the first substrate 110 and the second substrate 111.
[0027]
In the present embodiment, the first lens 102, the second lens 103, and the third lens 104 for condensing light on or near the first substrate 110 and the second substrate 111 are used. . However, the laser beam is not necessarily required because it has a very high directivity. Further, the first lens 102, the second lens 103, and the third lens 104 may not have the same focal length, and the number of lenses to be used is not limited.
[0028]
In the present embodiment, the number of substrates is two, but the number is not limited to this as long as there are a plurality of substrates. Further, in order to use the laser beam most effectively, the irradiation surface is installed perpendicular to the traveling direction of the laser beam, but may be installed obliquely with respect to the laser beam as shown in FIG. . In addition, as shown in FIG. 22, the incident angle with respect to each irradiation surface is different, for example, the first substrate is incident laser light obliquely and is incident on the second substrate vertically using the prism 155. It may be.
[0029]
Here, the wavelength used in the present invention will be described. 2 to 5 show the reflectance and transmittance with respect to the wavelength. FIG. 2 shows reflectance and transmittance with respect to wavelength in an amorphous silicon film (film thickness 55 nm) formed on a 1737 glass substrate, and FIG. 3 shows a crystalline silicon film (film thickness) formed on a 1737 glass substrate. FIG. 4 shows the reflectance and transmittance with respect to the wavelength of the 1737 glass substrate, and FIG. 5 shows the reflectance and transmittance with respect to the wavelength of the synthetic quartz glass substrate.
[0030]
In the XeCl excimer laser (wavelength 308 nm) generally used in laser annealing, the reflectance with respect to the amorphous silicon film is 54% and the transmittance is 0%. Further, the reflectance with respect to the crystalline silicon film is 52%, and the transmittance is 0%. On the other hand, in the second harmonic (wavelength 532 nm) of the YAG laser, the reflectance with respect to the amorphous silicon film is 26% and the transmittance is 38%. Further, the reflectance with respect to the crystalline silicon film is 30%, and the transmittance is 45%.
[0031]
2 and 3 use a 1737 glass substrate. From FIG. 4, the transmittance of the 1737 glass substrate increases in proportion to the wavelength at 200 to 380 nm, and the transmittance of 90% or more at wavelengths longer than 380 nm. It has become. Although the transmittance of the 1737 glass substrate at the wavelength of 308 nm is lower than that of the wavelength of 380 nm or more, the transmittance for the amorphous silicon film and the crystalline silicon film at the wavelength of 308 nm is 0%. You can think that there is almost no influence. Further, since the transmittance of the 1737 glass substrate is 90% or more at the wavelength of 532 nm, it may be considered that the influence of the 1737 glass substrate is hardly present.
[0032]
Further, consider the case where a semiconductor film is formed on a synthetic quartz glass substrate. From FIG. 5, the transmittance of the synthetic quartz glass substrate is always 90% or more for wavelengths of 200 to 800 nm. Therefore, the influence of the synthetic quartz glass substrate need not be considered more than that of the 1737 glass substrate.
[0033]
From the above, the second harmonic of the YAG laser has lower reflectance and higher transmittance for the amorphous semiconductor film and the crystalline semiconductor film (both having a film thickness of 55 nm) than the XeCl excimer laser. Recognize. That is, when laser annealing is performed on an amorphous silicon film or a crystalline semiconductor film, the XeCl excimer laser does not transmit these semiconductor films, but it can be transmitted using the second harmonic of the YAG laser. In addition, the second harmonic of the YAG laser shows high transmittance also for the 1737 glass substrate and the synthetic quartz glass substrate.
[0034]
2 to 5, the wavelength used in the present invention is preferably 350 nm or more (preferably 400 nm or more).
[0035]
Next, a case where the semiconductor film is crystallized using such an irradiation method will be described. In crystallization of a semiconductor film, if the total irradiation energy density is equal, the crystal grain sizes can be made equal. Therefore, by changing the moving speed of the substrate with respect to the laser beam and the beam size on the substrate, the same crystal grain size can be formed on a plurality of substrates. In addition, the thickness and type of the semiconductor film formed on the substrate may be changed, or the size and type of the substrate may be changed. Furthermore, it is possible to intentionally form crystal grains having different sizes by changing the total irradiation energy density.
[0036]
As described above, the present invention makes it possible to improve the throughput by effectively using the laser light transmitted through the substrate. Further, since processing with a small number of lasers is possible, it is possible to greatly reduce the labor of laser maintenance. Then, the TFT manufactured using the semiconductor film obtained by annealing the semiconductor film using the present invention has good electrical characteristics, and the operating characteristics and reliability of the semiconductor device can be improved.
[0037]
[Embodiment 2]
In the present embodiment, an example of annealing a semiconductor film using a difference in peak power density among a plurality of substrates will be described with reference to FIG.
[0038]
In order to crystallize the amorphous semiconductor film, laser annealing is performed on the amorphous semiconductor film at a first peak power density to form a first crystalline semiconductor film, and then an atmosphere different from the first energy density is formed. (O ₂ There is a method in which a second crystalline semiconductor film is formed by performing laser annealing at a second peak power density in an atmosphere that does not contain the same. By using this method, ridges formed on the surface of the first crystalline semiconductor film can be reduced. The second energy density is preferably higher than the first energy density.
[0039]
The ridge formed on the surface of the semiconductor film by laser annealing forms a potential barrier and trap order due to dangling bonds and lattice distortion, so that the interface state between the active region and the gate insulating film is increased. Resulting in. In addition, since the top of the ridge is steep, the electric field tends to concentrate, and as a result, a leak current is generated, eventually causing dielectric breakdown and short-circuiting. In addition, the ridge on the surface of the crystalline semiconductor film impairs the film property of the gate insulating film, and reduces reliability such as insulation failure. One of the factors that determine the field effect mobility of TFT is the surface scattering effect. The flatness of the TFT active layer / gate insulating film interface has a great influence on the field effect mobility, and the flatter the interface, the higher the field effect mobility can be obtained without being influenced by scattering. Therefore, if the ridge on the surface of the crystalline semiconductor film is reduced, all the electrical characteristics of the TFT can be improved and the yield can be improved.
[0040]
Therefore, a substrate on which the first crystalline semiconductor film is formed is installed as the first substrate 110, and a substrate on which the amorphous semiconductor film is formed is installed as the second substrate 111. If these substrates are simultaneously subjected to laser annealing in an active gas, a vacuum, a nitrogen atmosphere, etc.), the substrate can be processed efficiently, and the ridge formed in the first crystalline semiconductor film is It is reduced in the second crystalline semiconductor film. Then, if a TFT is manufactured using the second crystalline semiconductor film, the electrical characteristics are good, and the yield can be improved.
[0041]
Further, in the present embodiment, an example in which two substrates are used is shown, but the number is not limited to this as long as there are a plurality of substrates.
[0042]
[Embodiment 3]
In this embodiment, an example in which a semiconductor film is annealed in different steps by using a difference in peak power density among a plurality of substrates will be described with reference to FIG.
[0043]
Different peak power densities are required for the crystallization of the amorphous semiconductor film and the annealing for the activation of the impurity element and the recovery of the crystallinity of the semiconductor film performed after the impurity element is introduced into the semiconductor film. Is done. Generally, the peak power density in crystallization of an amorphous semiconductor film is higher.
[0044]
Therefore, a substrate on which an amorphous semiconductor film is formed is provided as the first substrate 110, and a substrate on which a semiconductor film into which an impurity element is introduced is provided as the second substrate 111. If laser annealing is performed on the substrate at the same time, laser light can be used effectively, so that the substrate can be processed efficiently. In this way, since processing for different processes can be performed by one laser, the cost can be reduced, and the labor of laser maintenance can be greatly reduced. In addition, the footprint can be reduced. Since the present invention has such advantages, it is particularly effective when used as a mass production machine. If a TFT is manufactured using such a semiconductor film, the electrical characteristics are improved, and the yield can be improved.
[0045]
In the present embodiment, an example in which two substrates are used is shown, but the number is not limited to this as long as there are a plurality of substrates.
[0046]
[Embodiment 4]
In this embodiment, an example of annealing a plurality of substrates having different heat resistance will be described with reference to FIGS. 1 and 2. In the present embodiment, an amorphous silicon film having a thickness of 55 nm is formed as a semiconductor film on the first substrate and the second substrate, and the present invention will be described with reference to FIG. However, it is not limited to this.
[0047]
The heat-resistant temperature varies depending on the substrate. For example, the strain point of the synthetic quartz glass substrate is around 1000 ° C., the strain point of the glass substrate is around 600 ° C., and the strain point of the plastic substrate is around 200 ° C.
[0048]
Laser annealing is a method that can give high energy to the semiconductor film without excessively increasing the temperature of the substrate. However, when laser light that passes through the substrate is used, it is desirable to use a substrate having a certain degree of heat resistance. . Therefore, the substrate having the highest heat resistance is placed on the first substrate, and annealing is performed by gradually placing the substrate having the lower heat resistance. In this embodiment, laser annealing is performed using a quartz substrate as the first substrate and a glass substrate or a plastic substrate as the second substrate.
[0049]
As described above, the present invention can effectively use a laser beam and efficiently process a plurality of types of substrates having different heat resistance. Moreover, since different products can be manufactured simultaneously, it is particularly effective when used as a mass production machine. In addition, since it is not necessary to prepare devices for different products, it is possible to reduce the cost and to greatly reduce the labor of laser maintenance. In addition, the footprint can be reduced.
[0050]
Note that this embodiment can be freely combined with Embodiments 1 to 3.
[0051]
[Embodiment 5]
In the present embodiment, conditions for moving a plurality of substrates at different speeds will be described with reference to FIGS. 2 and 6. 6 does not have the jig 105c for connecting the jigs 105a and 105b for suspending the substrate in FIG. 1, and is otherwise the same as FIG.
[0052]
In the present embodiment, an amorphous silicon film having a thickness of 55 nm is formed as a semiconductor film on the first substrate and the second substrate, and the present invention will be described with reference to FIG. This is not a limitation.
[0053]
When the peak power density of the laser beam reaching the first substrate is 1, the transmittance is 38% from FIG. Therefore, the laser beam reaching the second substrate is 0.38. Here, the transmittance of the lens is ignored. As described above, the peak power density on the first substrate and the peak power density on the second substrate are different from each other, but by changing the relative moving speed of each substrate with respect to the laser light, The peak power density at the substrate will be compensated.
[0054]
When the relative movement speed of the first substrate with respect to the laser beam is 1, the peak power density is 1, and the beam width (the length of the laser beam on the irradiation surface parallel to the relative movement direction of the laser beam) is w. The total irradiation energy density in the first substrate is
Total irradiation energy density
= (Beam width 1 / moving speed 1) x peak power density 1
= (W / 1) x 1
= W (1)
It becomes. In this specification,
Total irradiation energy density = irradiation time x peak power density
Irradiation time = beam width / moving speed
It is defined as
[0055]
Since the peak power density in the second substrate is 0.38,
Total irradiation energy density
= (Beam width 2 / moving speed 2) x peak power density 2
= (W / movement speed 2) x 0.38
= 0.38w / movement speed 2 (2)
It becomes. Here, the shape of the laser beam on the irradiation surface is the same in the first substrate and the second substrate.
[0056]
When the formulas (1) and (2) are equal, the total irradiation energy density is the same. Therefore, from equations (1) and (2),
(1) Formula = (2) Formula
∴s = 0.38s / Movement speed 2
∴Moving speed 2 = 0.38
∴Movement speed 1: Movement speed 2 = 1: 0.38 (3)
Is obtained.
[0057]
From the above, if the movement speed of the first substrate and the movement speed of the second substrate are represented by the relationship (3), the total irradiation energy density becomes equal.
[0058]
As described above, the present invention can effectively use the laser beam. Therefore, it is particularly effective when used as a mass production machine.
[0059]
In the present embodiment, an amorphous silicon film is used as an example of the semiconductor film. However, the present invention is not limited to this, and the laser light reaching the first substrate and the laser light reaching the second substrate, that is, the first film. If the relationship with the transmittance of one substrate is applied to the moving speed of each substrate, it can be applied to various semiconductor films including silicon germanium and silicon silicon carbide.
[0060]
Further, in the present embodiment, an example in which two substrates are used is shown, but the number is not limited to this as long as there are a plurality of substrates.
[0061]
Note that this embodiment can be freely combined with Embodiments 1 to 4.
[0062]
[Embodiment 6]
In the present embodiment, a method for forming a semiconductor film having crystal grains with uniform grain diameters in a plurality of substrates. This will be described with reference to FIGS. 2 and 7.
[0063]
Specifically, the relative moving speed of the plurality of substrates with respect to the laser beam and the beam length of the laser beam formed on the plurality of substrates (the length of the laser beam perpendicular to the beam width on the irradiation surface) are changed. Instead, only the beam width is changed, and the laser annealing is performed with the same peak power density in each substrate. Note that FIG. 7A has the same configuration as FIG. 6 and is the same as FIG. 6 except that the distance between the third lens and the second substrate is changed, and thus description thereof is omitted.
[0064]
In the present embodiment, an amorphous silicon film having a thickness of 55 nm is formed as a semiconductor film on the first substrate and the second substrate, and the present invention will be described with reference to FIG. This is not a limitation.
[0065]
When the peak power density of the laser beam reaching the first substrate is 1, the transmittance is 38% from FIG. Therefore, the laser beam reaching the second substrate is 0.38. Here, the transmittance of the lens is ignored. As described above, the peak power density on the first substrate is different from the peak power density on the second substrate. By changing the beam width on each substrate, the peak power density on the second substrate is changed. Will be supplemented.
[0066]
When the relative movement speed of the first substrate with respect to the laser beam is 1, the peak power density is 1, and the beam width 122 is w1, the total irradiation energy density on the first substrate is
Total irradiation energy density
= (Beam width / moving speed) x peak power density 1
= (W1 / 1) x peak power density 1
= W1 x peak power density 1 (4)
It becomes.
[0067]
The peak power density in the second substrate is 0.38, the relative movement speed of the second substrate with respect to the laser beam is 1, and the beam width 123 is w2.
Total irradiation energy density
= (Beam width / moving speed) x peak power density 2
= (W2 / 1) x peak power density 2
= W2 x peak power density 2 (5)
It becomes.
[0068]
When the equations (4) and (5) are equal, the total irradiation energy density is the same, so that the crystal grain sizes can be made uniform in the first substrate and the second substrate. Therefore, from equations (4) and (5),
(4) Formula = (5) Formula
∴w1 × peak power density 1 = w2 × peak power density 2
∴w1: w2 = peak power density 2: peak power density 1 (6)
Is required.
[0069]
From the above, if the relationship between the beam width on the first substrate and the beam width on the second substrate is peak power density 2: peak power density 1, the total irradiation energy density is equal and the crystal grain size is made uniform. Make it possible. (Fig. 7 (B), (C))
[0070]
As described above, the present invention can effectively use the laser beam. Therefore, it is particularly effective when used as a mass production machine.
[0071]
In the present embodiment, an amorphous silicon film is used as an example of the semiconductor film. However, the present invention is not limited to this, and the laser light reaching the first substrate and the laser light reaching the second substrate, that is, the first film. If the relationship between the transmittance of one substrate and the beam width of each substrate is applied, it can be applied to various semiconductor films including silicon germanium and silicon silicon carbide.
[0072]
In this embodiment, an example using two substrates is shown. However, the number of substrates is not limited to this, and an example in which the beam width is changed by fixing the beam length is shown. However, the beam width is fixed. You can also change the beam length.
[0073]
Note that this embodiment can be freely combined with Embodiments 1 to 5.
[0074]
[Embodiment 7]
In this embodiment, an example in which laser annealing is performed using a plurality of substrates having different sizes will be described with reference to FIGS. Note that FIG. 8A is the same as FIG. 7 except that the position of the jig 105a is changed in FIG.
[0075]
As obtained in the fifth embodiment, in order to make the peak power density the same in the first substrate 130 and the second substrate 131, the beam width is set as follows.
w1: w2 = peak power density 2: peak power density 1 (6)
It is necessary to.
[0076]
When the laser beam (or substrate) is moved at the same speed, if the beam width is different, the area that can be annealed per unit time is reduced. Therefore, when annealing the entire surface of the substrate, the processing time differs between the first substrate and the second substrate. Therefore, in the present embodiment, an example will be described in which the size of the first substrate and the second substrate is changed to make the processing time per substrate the same.
[0077]
Since the beam size 132 on the first substrate and the beam width on the second substrate are as shown in the equation (6), the side d1 and the second side d1 of the first substrate parallel to the relative movement direction of the laser light. The ratio of one side d2 of the substrate
d1: d2 = w1: w2
= Peak power density 2: Peak power density 1 (7)
And it is sufficient.
[0078]
As described above, when the size relationship between the first substrate and the second substrate is 1: 0.38, the time required for laser annealing can be made equal. (Fig. 7 (B), (C))
[0079]
Also in this embodiment, since the total irradiation energy density in the first substrate and the second substrate is equal, the crystal grain sizes can be made uniform.
[0080]
As described above, the present invention can effectively use the laser beam. In addition, since substrates of different sizes can be annealed simultaneously, it is particularly effective when used as a mass production machine for producing a plurality of products. In order to create a plurality of products, an apparatus is required for each. However, if the present invention is applied, the number of apparatuses can be reduced, and the cost can be reduced. In addition, the footprint can be reduced.
[0081]
In the present embodiment, an amorphous silicon film is used as an example of the semiconductor film. However, the present invention is not limited to this, and the laser light reaching the first substrate and the laser light reaching the second substrate, that is, the first film. If the relationship with the transmittance of one substrate is applied to the size of each substrate, it can be applied to various semiconductor films including silicon germanium and silicon silicon carbide.
[0082]
Further, in the present embodiment, an example in which two substrates are used is shown, but the number is not limited to this as long as there are a plurality of substrates.
[0083]
Note that this embodiment can be freely combined with Embodiments 1 to 6.
[0084]
[Eighth embodiment]
In this embodiment, an example of optimum conditions for laser annealing in crystallization of a semiconductor film using the laser irradiation apparatus of the present invention will be described with reference to FIGS.
[0085]
First, as the substrate 20, a substrate made of glass such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a silicon substrate, a metal substrate, or a stainless substrate on which an insulating film is formed can be used. Further, a plastic substrate having heat resistance that can withstand the processing temperature of the present embodiment may be used. In this embodiment, a glass substrate is used.
[0086]
Next, a base film 21 made of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed on the substrate 20. In this embodiment, a single layer structure is used as the base film 21, but a structure in which two or more insulating films are stacked may be used. In this embodiment, a silicon oxynitride film (composition ratio Si = 32%, O = 59%, N = 7%, H = 2%) 400 nm is formed by plasma CVD.
[0087]
Next, a semiconductor film 22 is formed on the base film 21. The semiconductor film 22 is formed with a thickness of 25 to 200 nm (preferably 30 to 100 nm) by a known means (sputtering method, LPCVD method, plasma CVD method or the like), and a known crystallization method (laser crystal). Crystallization method, thermal crystallization method using RTA or furnace annealing furnace, thermal crystallization method using metal element that promotes crystallization, etc.). The semiconductor film includes an amorphous semiconductor film, a microcrystalline semiconductor film, a crystalline semiconductor film, etc., and a compound having an amorphous structure such as an amorphous silicon germanium film or an amorphous silicon carbide film. A semiconductor film may be applied. In this embodiment, a 55 nm amorphous silicon film is formed by plasma CVD.
[0088]
The crystallization process of the semiconductor film was performed under two conditions. First, the sample 1 manufactured under the first condition is such that after this amorphous silicon film is dehydrogenated (500 ° C., 3 hours), a laser annealing method is performed to form a crystalline silicon film. . (Fig. 9 (B))
[0089]
On the other hand, the sample 2 manufactured under the second condition is obtained by forming a metal-containing layer 31 using the method described in Japanese Patent Laid-Open No. 7-183540, performing a heat treatment, and then performing a semiconductor annealing by a laser annealing method. The crystallinity of the film is improved. In this embodiment, a nickel acetate aqueous solution (concentration 5 ppm by weight, volume 10 ml) is applied on a semiconductor film by spin coating, and heat treatment is performed in a nitrogen atmosphere at 500 ° C. for 1 hour and in a nitrogen atmosphere at 550 ° C. for 12 hours. Do. Subsequently, the crystallinity of the semiconductor film is improved by laser annealing. (Fig. 10)
[0090]
When a crystalline semiconductor film is formed by a laser annealing method, a pulse oscillation type or continuous oscillation type KrF excimer laser, YAG laser, YVO _Four Laser, YLF laser, YAlO _Three A laser, a glass laser, a ruby laser, a Ti: sapphire laser, or the like can be used. In the case of using these lasers, it is preferable to use a method in which a laser beam emitted from a laser oscillator is linearly collected by an optical system and irradiated onto a semiconductor film. Crystallization conditions are appropriately selected by the practitioner. When an excimer laser is used, the pulse oscillation frequency is 300 Hz, and the laser energy density is 100 to 700 mJ / cm. ² (Typically 200-300mJ / cm ² ). When a YAG laser is used, the second harmonic is used and the pulse oscillation frequency is 1 to 300 Hz, and the laser energy density is 300 to 1000 mJ / cm. ² (Typically 350-500mJ / cm ² ) Then, laser light condensed linearly with a width of 100 to 1000 μm, for example 400 μm, is irradiated over the entire surface of the substrate, and the linear beam superposition ratio (overlap ratio) at this time is 50 to 98%. Good.
[0091]
In this embodiment, the second harmonic of a continuous wave YLF laser is used, the relative movement speed of the substrate with respect to the laser light is changed, and the shape of the laser light on the irradiated surface is made to be an ellipse of 650 μm × 100 μm. The optimum peak power in crystallization of was determined. The result is shown in FIG. From FIG. 11, if the peak power on a plurality of substrates is measured by a beam profiler or the like, the optimum moving speed of each substrate can be obtained. Moreover, since the peak power density can be obtained by dividing the peak power by the beam width, the optimum moving speed can be obtained by using FIG. 11 even when the beam width is changed.
[0092]
Note that this embodiment can be freely combined with Embodiments 1 to 7.
[0093]
[Embodiment 9]
In this embodiment, a method for manufacturing an active matrix substrate will be described with reference to FIGS. In this specification, a substrate in which a pixel portion having a CMOS circuit, a driver circuit, a pixel TFT, and a storage capacitor is formed over the same substrate is referred to as an active matrix substrate for convenience.
[0094]
First, in this embodiment, a substrate 400 made of glass such as barium borosilicate glass or alumino borosilicate glass is used. Note that the substrate 400 may be a quartz substrate, a silicon substrate, a metal substrate, or a stainless substrate on which an insulating film is formed. In addition, a plastic substrate having heat resistance that can withstand the processing temperature of the present embodiment may be used, or a flexible substrate may be used. In the present invention, since a linear beam having the same energy distribution can be easily formed, a large area substrate can be efficiently annealed by a plurality of linear beams.
[0095]
Next, a base film 401 made of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed over the substrate 400 by a known means. In this embodiment, a two-layer structure is used as the base film 401, but a single-layer film of the insulating film or a structure in which two or more layers are stacked may be used.
[0096]
Next, a semiconductor film is formed over the base film. The semiconductor film is formed with a thickness of 25 to 200 nm (preferably 30 to 150 nm) by a known means (sputtering method, LPCVD method, plasma CVD method, etc.), and is crystallized by a laser crystallization method. In the laser crystallization method, any one of Embodiments 1 to 8, or any combination of these embodiments is used to irradiate a semiconductor film with laser light. The laser used is preferably a continuous wave or pulsed solid laser, a gas laser, or a metal laser. The solid-state laser may be a continuous wave or pulsed YAG laser, YVO _Four Laser, YLF laser, YAlO _Three There are lasers, glass lasers, ruby lasers, alexandride lasers, Ti: sapphire lasers, etc., and the gas lasers are continuous oscillation or pulse oscillation KrF excimer laser, Ar laser, Kr laser, CO ₂ Examples of the metal laser include a continuous wave or pulsed helium cadmium laser, a copper vapor laser, and a gold vapor laser. Of course, not only the laser crystallization method but also other known crystallization methods (thermal crystallization method using RTA or furnace annealing furnace, thermal crystallization method using metal element for promoting crystallization, etc.) You may go. Examples of the semiconductor film include an amorphous semiconductor film, a microcrystalline semiconductor film, a crystalline semiconductor film, and the like, and a compound semiconductor film having an amorphous structure such as an amorphous silicon germanium film or an amorphous silicon carbide film. May be applied.
[0097]
In this embodiment, a plasma CVD method is used to form a 50 nm amorphous silicon film, and a thermal crystallization method and a laser crystallization method using a metal element that promotes crystallization on the amorphous silicon film. Do. Nickel is used as the metal element and is introduced onto the amorphous silicon film by a solution coating method, and then a heat treatment is performed at 550 ° C. for 5 hours to obtain a first crystalline silicon film. And YVO of continuous oscillation of output 10W _Four After the laser light emitted from the laser is converted into the second harmonic by the non-linear optical element, laser annealing is performed twice according to the first embodiment to obtain a second crystalline silicon film. Crystallinity is improved by irradiating the first crystalline silicon film with a laser beam to form a second crystalline silicon film. Furthermore, by performing laser annealing twice, ridges formed on the surface of the semiconductor film are reduced. The energy density at this time is 0.01 to 100 MW / cm. ² Degree (preferably 0.1-10 MW / cm ² )is required. Then, irradiation is performed by moving the stage relative to the laser light at a speed of about 0.5 to 2000 cm / s to form a crystalline silicon film. When a pulsed excimer laser is used, the frequency is 300 Hz and the laser energy density is 100 to 1000 mJ / cm. ² (Typically 200-800mJ / cm ² ) Is desirable. At this time, the laser beams may be overlapped by 50 to 98%.
[0098]
Needless to say, a TFT can be manufactured using the first crystalline silicon film, but the second crystalline silicon film is preferable because the electrical characteristics of the TFT are improved because the crystallinity is improved. For example, when a TFT is manufactured using the first crystalline silicon film, the mobility is 300 cm. ² / Vs, but when a TFT is manufactured using the second crystalline silicon film, the mobility is 500 to 600 cm. ² It is remarkably improved to about / Vs.
[0099]
Semiconductor layers 402 to 406 are formed by patterning the crystalline semiconductor film thus obtained using a photolithography method.
[0100]
Further, after forming the semiconductor layers 402 to 406, a small amount of impurity element (boron or phosphorus) may be doped in order to control the threshold value of the TFT.
[0101]
Next, a gate insulating film 407 covering the semiconductor layers 402 to 406 is formed. The gate insulating film 407 is formed of an insulating film containing silicon with a thickness of 40 to 150 nm by plasma CVD or sputtering. In this embodiment, a silicon oxynitride film is formed with a thickness of 110 nm by plasma CVD. Of course, the gate insulating film is not limited to the silicon oxynitride film, and another insulating film may be used as a single layer or a laminated structure.
[0102]
When a silicon oxide film is used, TEOS (Tetraethyl Orthosilicate) and O ₂ The reaction pressure is 40 Pa, the substrate temperature is 300 to 400 ° C., and the high frequency (13.56 MHz) power density is 0.5 to 0.8 W / cm. ² And can be formed by discharging. The silicon oxide film thus manufactured can obtain good characteristics as a gate insulating film by thermal annealing at 400 to 500 ° C. thereafter.
[0103]
Next, a first conductive film 408 with a thickness of 20 to 100 nm and a second conductive film 409 with a thickness of 100 to 400 nm are stacked over the gate insulating film 407. In this embodiment, a first conductive film 408 made of a 30 nm thick TaN film and a second conductive film 409 made of a 370 nm thick W film are stacked. The TaN film is formed by sputtering, and is sputtered in a nitrogen-containing atmosphere using a Ta target. The W film was formed by sputtering using a W target. In addition, tungsten hexafluoride (WF ₆ It can also be formed by a thermal CVD method using In any case, in order to use as a gate electrode, it is necessary to reduce the resistance, and the resistivity of the W film is desirably 20 μΩcm or less.
[0104]
In the present embodiment, the first conductive film 408 is TaN and the second conductive film 409 is W. However, there is no particular limitation, and all of them are Ta, W, Ti, Mo, Al, Cu, Cr, Nd. You may form with the element selected from these, or the alloy material or compound material which has the said element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. Further, an AgPdCu alloy may be used.
[0105]
Next, resist masks 410 to 415 are formed by photolithography, and a first etching process is performed to form electrodes and wirings. The first etching process is performed under the first and second etching conditions. (FIG. 12B) In this embodiment, ICP (Inductively Coupled Plasma) etching is used as the first etching condition, and CF is used as an etching gas. _Four And Cl ₂ And O ₂ The gas flow ratio is 25:25:10 (sccm), and 500 W of RF (13.56 MHz) power is applied to the coil-type electrode at a pressure of 1 Pa to generate plasma and perform etching. 150 W RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. The W film is etched under this first etching condition so that the end portion of the first conductive layer is tapered.
[0106]
Thereafter, the resist masks 410 to 415 are not removed and the second etching condition is changed, and the etching gas is changed to CF _Four And Cl ₂ The gas flow ratio is 30:30 (sccm), and 500 W of RF (13.56 MHz) power is applied to the coil-type electrode at a pressure of 1 Pa to generate plasma and etching for about 30 seconds. I do. 20 W of RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. CF _Four And Cl ₂ Under the second etching condition in which is mixed, the W film and the TaN film are etched to the same extent. Note that in order to perform etching without leaving a residue on the gate insulating film, it is preferable to increase the etching time at a rate of about 10 to 20%.
[0107]
In the first etching process, the shape of the mask made of resist is made suitable, and the end portions of the first conductive layer and the second conductive layer are tapered due to the effect of the bias voltage applied to the substrate side. It becomes. The angle of this taper portion is 15 to 45 °. Thus, the first shape conductive layers 417 to 422 (first conductive layers 417 a to 422 a and second conductive layers 417 b to 422 b) composed of the first conductive layer and the second conductive layer by the first etching treatment. Form. Reference numeral 416 denotes a gate insulating film, and a region not covered with the first shape conductive layers 417 to 422 is etched and thinned by about 20 to 50 nm.
[0108]
Next, a second etching process is performed without removing the resist mask. (FIG. 12C) Here, CF is used as an etching gas. _Four And Cl ₂ And O ₂ Then, the W film is selectively etched. At this time, second conductive layers 428b to 433b are formed by a second etching process. On the other hand, the first conductive layers 417a to 422a are hardly etched, and the second shape conductive layers 428 to 433 are formed.
[0109]
Then, a first doping process is performed without removing the resist mask, and an impurity element imparting n-type conductivity is added to the semiconductor layer at a low concentration. The doping process may be performed by ion doping or ion implantation. The condition of the ion doping method is a dose of 1 × 10 ¹³ ~ 5x10 ¹⁴ / Cm ² The acceleration voltage is set to 40 to 80 keV. In this embodiment, the dose amount is 1.5 × 10 ¹³ / Cm ² The acceleration voltage is set to 60 keV. As an impurity element imparting n-type, an element belonging to Group 15, typically phosphorus (P) or arsenic (As), is used here, but phosphorus (P) is used. In this case, the conductive layers 428 to 433 serve as a mask for the impurity element imparting n-type, and the impurity regions 423 to 427 are formed in a self-aligning manner. Impurity regions 423 to 427 have 1 × 10 ¹⁸ ~ 1x10 ²⁰ /cm ^Three An impurity element imparting n-type is added in a concentration range of.
[0110]
After removing the resist mask, new resist masks 434a to 434c are formed, and the second doping process is performed at an acceleration voltage higher than that of the first doping process. The condition of the ion doping method is a dose of 1 × 10 ¹³ ~ 1x10 ¹⁵ /cm ² The acceleration voltage is set to 60 to 120 keV. In the doping treatment, the second conductive layers 428b to 432b are used as masks against the impurity element, and doping is performed so that the impurity element is added to the semiconductor layer below the tapered portion of the first conductive layer. Subsequently, a third doping process is performed by lowering the acceleration voltage than the second doping process to obtain the state of FIG. The condition of the ion doping method is a dose of 1 × 10 ¹⁵ ~ 1x10 ¹⁷ /cm ² The acceleration voltage is set to 50 to 100 keV. The low-concentration impurity regions 436, 442, and 448 overlapping with the first conductive layer by the second doping process and the third doping process have 1 × 10 ¹⁸ ~ 5x10 ¹⁹ /cm ^Three An impurity element imparting n-type is added in the concentration range of 1 × 10 in the high-concentration impurity regions 435, 438, 441, 444, and 447. ¹⁹ ~ 5x10 ^{twenty one} /cm ^Three An impurity element imparting n-type is added in a concentration range of.
[0111]
Needless to say, by setting the acceleration voltage to be appropriate, the second and third doping processes can be performed in a single doping process to form the low-concentration impurity region and the high-concentration impurity region.
[0112]
Next, after removing the resist mask, new resist masks 450a to 450c are formed, and a fourth doping process is performed. By this fourth doping process, impurity regions 453 to 456, 459, and 460 in which an impurity element imparting a conductivity type opposite to the one conductivity type is added to the semiconductor layer that becomes the active layer of the p-channel TFT are formed. To do. The second conductive layers 428a to 432a are used as masks against the impurity element, and an impurity element imparting p-type is added to form an impurity region in a self-aligning manner. In this embodiment, the impurity regions 453 to 456, 459, and 460 are diborane (B ₂ H ₆ ) Using an ion doping method. (FIG. 13B) In the fourth doping process, the semiconductor layer forming the n-channel TFT is covered with masks 450a to 450c made of resist. Phosphorus is added to the impurity regions 438 and 439 at different concentrations by the first to third doping treatments, and the concentration of the impurity element imparting p-type is 1 × 10 5 in any of the regions. ¹⁹ ~ 5x10 ^{twenty one} atoms / cm ^Three By performing the doping treatment so as to become, no problem arises because it functions as the source region and drain region of the p-channel TFT.
[0113]
Through the above steps, impurity regions are formed in the respective semiconductor layers.
[0114]
Next, the resist masks 450 a to 450 c are removed, and a first interlayer insulating film 461 is formed. The first interlayer insulating film 461 is formed of an insulating film containing silicon with a thickness of 100 to 200 nm using a plasma CVD method or a sputtering method. In this embodiment, a silicon oxynitride film having a thickness of 150 nm is formed by plasma CVD. Needless to say, the first interlayer insulating film 461 is not limited to the silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure.
[0115]
Next, laser light irradiation is performed to recover the crystallinity of the semiconductor layers and to activate the impurity elements added to the respective semiconductor layers. In the laser activation, the semiconductor film is irradiated with laser light in accordance with the first to eighth embodiments. The laser used is preferably a continuous wave or pulsed solid laser, a gas laser, or a metal laser. The solid-state laser may be a continuous wave or pulsed YAG laser, YVO _Four Laser, YLF laser, YAlO _Three There are lasers, glass lasers, ruby lasers, alexandride lasers, Ti: sapphire lasers, etc., and the gas lasers are continuous oscillation or pulse oscillation KrF excimer laser, Ar laser, Kr laser, CO ₂ Examples of the metal laser include a continuous wave or pulsed helium cadmium laser, a copper vapor laser, and a gold vapor laser. At this time, if a continuous wave laser is used, the energy density of the laser beam is 0.01 to 100 MW / cm. ² Degree (preferably 0.01 to 10 MW / cm ² ) And the substrate is moved at a speed of 0.5 to 2000 cm / s relative to the laser beam. If a pulsed laser is used, the frequency is 300 Hz and the laser energy density is 50 to 1000 mJ / cm. ² (Typically 50-500mJ / cm ² ) Is desirable. At this time, the laser beams may be overlapped by 50 to 98%. In addition to the laser annealing method, a thermal annealing method, a rapid thermal annealing method (RTA method), or the like can be applied.
[0116]
In addition, activation may be performed before forming the first interlayer insulating film. However, when the wiring material used is weak against heat, it is activated after an interlayer insulating film (insulating film containing silicon as a main component, for example, a silicon nitride film) is formed to protect the wiring and the like as in this embodiment. It is preferable to perform the conversion treatment.
[0117]
Then, hydrogenation can be performed by heat treatment (heat treatment at 300 to 550 ° C. for 1 to 12 hours). This step is a step of terminating dangling bonds in the semiconductor layer with hydrogen contained in the first interlayer insulating film 461. The semiconductor layer can be hydrogenated regardless of the presence of the first interlayer insulating film. As other means for hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) or heat treatment at 300 to 450 ° C. for 1 to 12 hours in an atmosphere containing 3 to 100% hydrogen may be performed. .
[0118]
Next, a second interlayer insulating film 462 made of an inorganic insulating film material or an organic insulating material is formed over the first interlayer insulating film 461. In the present embodiment, an acrylic resin film having a thickness of 1.6 μm is formed, but a film having a viscosity of 10 to 1000 cp, preferably 40 to 200 cp, and having a surface with unevenness is used.
[0119]
In this embodiment, in order to prevent specular reflection, the surface of the pixel electrode is formed uneven by forming a second interlayer insulating film having an uneven surface. In addition, a convex portion may be formed in a region below the pixel electrode in order to make the surface of the pixel electrode uneven to achieve light scattering. In that case, since the convex portion can be formed using the same photomask as that of the TFT, it can be formed without increasing the number of steps. In addition, this convex part should just be suitably provided on the board | substrate of pixel part area | regions other than wiring and a TFT part. Thus, irregularities are formed on the surface of the pixel electrode along the irregularities formed on the surface of the insulating film covering the convex portions.
[0120]
Alternatively, a film whose surface is planarized may be used as the second interlayer insulating film 462. In that case, after forming the pixel electrode, adding a step such as a known sandblasting method or etching method to make the surface uneven, prevent specular reflection, and increase the whiteness by scattering the reflected light Is preferred.
[0121]
In the driver circuit 506, wirings 464 to 468 that are electrically connected to the impurity regions are formed. Note that these wirings are formed by patterning a laminated film of a Ti film having a thickness of 50 nm and an alloy film (alloy film of Al and Ti) having a thickness of 500 nm. Of course, not only a two-layer structure but also a single-layer structure or a laminated structure of three or more layers may be used. Further, the wiring material is not limited to Al and Ti. For example, a wiring may be formed by patterning a laminated film in which Al or Cu is formed on a TaN film and a Ti film is further formed. (Fig. 14)
[0122]
In the pixel portion 507, a pixel electrode 470, a gate wiring 469, and a connection electrode 468 are formed. With this connection electrode 468, the source wiring (stacked layer of 443a and 443b) is electrically connected to the pixel TFT. In addition, the gate wiring 469 is electrically connected to the gate electrode of the pixel TFT. In addition, the pixel electrode 470 is electrically connected to the drain region 442 of the pixel TFT and further electrically connected to the semiconductor layer 458 functioning as one electrode forming a storage capacitor. Further, as the pixel electrode 471, it is desirable to use a highly reflective material such as a film containing Al or Ag as a main component or a laminated film thereof.
[0123]
As described above, a CMOS circuit including an n-channel TFT 501 and a p-channel TFT 502, a driver circuit 506 having an n-channel TFT 503, and a pixel portion 507 having a pixel TFT 504 and a storage capacitor 505 are formed over the same substrate. can do. Thus, the active matrix substrate is completed.
[0124]
The n-channel TFT 501 of the driver circuit 506 includes a channel formation region 437, a low-concentration impurity region 436 (GOLD region) that overlaps with the first conductive layer 428a that forms part of the gate electrode, and a high-concentration function as a source region or a drain region. An impurity region 452 and an impurity region 451 into which an impurity element imparting n-type conductivity and an impurity element imparting p-type conductivity are introduced are provided. The p-channel TFT 502, which is connected to the n-channel TFT 501 and the electrode 466 to form a CMOS circuit, includes a channel formation region 440, a high-concentration impurity region 454 that functions as a source region or a drain region, and an impurity element that imparts n-type conductivity And an impurity region 453 into which an impurity element imparting p-type conductivity is introduced. In the n-channel TFT 503, a channel formation region 443, a low concentration impurity region 442 (GOLD region) overlapping with the first conductive layer 430a which forms part of the gate electrode, and a high concentration impurity functioning as a source region or a drain region The region 456 includes an impurity region 455 into which an impurity element imparting n-type conductivity and an impurity element imparting p-type conductivity are introduced.
[0125]
The pixel TFT 504 in the pixel portion is provided with a channel formation region 446, a low concentration impurity region 445 (LDD region) formed outside the gate electrode, a high concentration impurity region 458 functioning as a source region or a drain region, and an n-type. An impurity region 457 into which an impurity element and an impurity element imparting p-type conductivity are introduced is provided. In addition, an impurity element imparting n-type conductivity and an impurity element imparting p-type conductivity are added to the semiconductor layer functioning as one electrode of the storage capacitor 505. The storage capacitor 505 is formed of an electrode (stack of 432a and 432b) and a semiconductor layer using the insulating film 416 as a dielectric.
[0126]
In the pixel structure of this embodiment, without using a black matrix, the end portions of the pixel electrodes are arranged and formed so as to overlap the source wiring so that the gaps between the pixel electrodes are shielded from light.
[0127]
FIG. 15 is a top view of the pixel portion of the active matrix substrate manufactured in this embodiment. In addition, the same code | symbol is used for the part corresponding to FIGS. A chain line AA ′ in FIG. 14 corresponds to a cross-sectional view taken along the chain line AA ′ in FIG. Further, a chain line BB ′ in FIG. 14 corresponds to a cross-sectional view taken along the chain line BB ′ in FIG.
[0128]
[Embodiment 10]
In this embodiment, a process of manufacturing a reflective liquid crystal display device from the active matrix substrate manufactured in Embodiment 9 will be described below. FIG. 16 is used for the description.
[0129]
First, after obtaining an active matrix substrate in the state of FIG. 14 according to Embodiment 9, an alignment film 567 is formed on at least the pixel electrode 470 on the active matrix substrate of FIG. In this embodiment, before the alignment film 567 is formed, a columnar spacer 572 for holding the substrate interval is formed at a desired position by patterning an organic resin film such as an acrylic resin film. Further, instead of the columnar spacers, spherical spacers may be scattered over the entire surface of the substrate.
[0130]
Next, a counter substrate 569 is prepared. Next, colored layers 570 and 571 and a planarization film 573 are formed over the counter substrate 569. The red colored layer 570 and the blue colored layer 571 are overlapped to form a light shielding portion. Further, the light shielding portion may be formed by partially overlapping the red colored layer and the green colored layer.
[0131]
In this embodiment, the substrate shown in Embodiment 9 is used. Therefore, in FIG. 15 showing a top view of the pixel portion of Embodiment 9, at least the gap between the gate wiring 469 and the pixel electrode 470, the gap between the gate wiring 469 and the connection electrode 468, and the gap between the connection electrode 468 and the pixel electrode 470 are shown. It is necessary to shield the light. In the present embodiment, the respective colored layers are arranged so that the light shielding portions formed by the lamination of the colored layers overlap each other at the positions where light shielding is to be performed, and the counter substrate is bonded.
[0132]
As described above, the number of steps can be reduced by shielding the gap between the pixels with the light shielding portion formed by the lamination of the colored layers without forming a light shielding layer such as a black mask.
[0133]
Next, a counter electrode 576 made of a transparent conductive film was formed over the planarization film 573 in at least the pixel portion, an alignment film 574 was formed over the entire surface of the counter substrate, and a rubbing process was performed.
[0134]
Then, the active matrix substrate on which the pixel portion and the driver circuit are formed and the counter substrate are attached to each other with a sealant 568. A filler is mixed in the sealing material 568, and two substrates are bonded to each other with a uniform interval by the filler and the columnar spacer. Thereafter, a liquid crystal material 575 is injected between both substrates and completely sealed with a sealant (not shown). A known liquid crystal material may be used for the liquid crystal material 575. In this way, the reflection type liquid crystal display device shown in FIG. 16 is completed. If necessary, the active matrix substrate or the counter substrate is divided into a desired shape. Further, a polarizing plate (not shown) was attached only to the counter substrate. And FPC was affixed using the well-known technique.
[0135]
The liquid crystal display device manufactured as described above has a TFT manufactured using a uniformly annealed semiconductor film because it is irradiated with laser light that makes it very easy to make the energy distribution uniform. Therefore, the operation characteristics and reliability of the liquid crystal display device can be sufficient. And such a liquid crystal display device can be used as a display part of various electronic devices.
[0136]
Note that this embodiment can be freely combined with Embodiments 1 to 8.
[0137]
[Embodiment 11]
In this embodiment, an example in which a light-emitting device is manufactured using the TFT manufacturing method for manufacturing the active matrix substrate described in Embodiment 9 will be described. In this specification, the light emitting device is a general term for a display panel in which a light emitting element formed on a substrate is sealed between the substrate and a cover material, and a display module including a TFT in the display panel. is there. Note that the light-emitting element includes a layer (light-emitting layer) containing an organic compound from which luminescence (Electro Luminescence) generated by applying an electric field is obtained, an anode layer, and a cathode layer. In addition, luminescence in an organic compound includes light emission (fluorescence) when returning from a singlet excited state to a ground state and light emission (phosphorescence) when returning from a triplet excited state to a ground state, one of these, Or both luminescence is included.
[0138]
In the present specification, all layers formed between the anode and the cathode in the light emitting element are defined as organic light emitting layers. Specifically, the organic light emitting layer includes a light emitting layer, a hole injection layer, an electron injection layer, a hole transport layer, an electron transport layer, and the like. Basically, a light emitting element has a structure in which an anode layer, a light emitting layer, and a cathode layer are sequentially laminated. In addition to this structure, an anode layer, a hole injection layer, a light emitting layer, a cathode layer, and an anode layer , A hole injection layer, a light emitting layer, an electron transport layer, a cathode layer and the like may be laminated in this order.
[0139]
FIG. 17 is a cross-sectional view of the light emitting device of this embodiment. In FIG. 17, a switching TFT 603 provided over a substrate 700 is formed using the n-channel TFT 503 in FIG. Therefore, the description of the n-channel TFT 503 may be referred to for the description of the structure.
[0140]
In this embodiment, a double gate structure in which two channel formation regions are formed is used, but a single gate structure in which one channel formation region is formed or a triple gate structure in which three channel formation regions are formed may be used.
[0141]
A driver circuit provided over the substrate 700 is formed using the CMOS circuit of FIG. Therefore, for the description of the structure, the description of the n-channel TFT 501 and the p-channel TFT 502 may be referred to. In the present embodiment, a single gate structure is used, but a double gate structure or a triple gate structure may be used.
[0142]
Further, the wirings 701 and 703 function as source wirings of the CMOS circuit, and the wiring 702 functions as a drain wiring. The wiring 704 functions as a wiring that electrically connects the source wiring 708 and the source region of the switching TFT, and the wiring 705 functions as a wiring that electrically connects the drain wiring 709 and the drain region of the switching TFT.
[0143]
Note that the current control TFT 604 is formed using the p-channel TFT 502 of FIG. Accordingly, the description of the p-channel TFT 502 may be referred to for the description of the structure. In the present embodiment, a single gate structure is used, but a double gate structure or a triple gate structure may be used.
[0144]
A wiring 706 is a source wiring (corresponding to a current supply line) of the current control TFT, and 707 is an electrode that is electrically connected to the pixel electrode 711 by being overlaid on the pixel electrode 711 of the current control TFT.
[0145]
Reference numeral 711 denotes a pixel electrode (anode of the light emitting element) made of a transparent conductive film. As the transparent conductive film, a compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, or indium oxide can be used. Moreover, you may use what added the gallium to the said transparent conductive film. The pixel electrode 711 is formed on the flat interlayer insulating film 710 before forming the wiring. In the present embodiment, it is very important to flatten the step due to the TFT using the flattening film 710 made of resin. Since the light emitting layer formed later is very thin, the presence of a step may cause a light emission failure. Therefore, it is desirable to planarize the pixel electrode before forming it so that the light emitting layer can be formed as flat as possible.
[0146]
After the wirings 701 to 707 are formed, a bank 712 is formed as shown in FIG. The bank 712 may be formed by patterning an insulating film or organic resin film containing silicon of 100 to 400 nm.
[0147]
Note that since the bank 712 is an insulating film, attention must be paid to electrostatic breakdown of elements during film formation. In this embodiment, carbon particles or metal particles are added to the insulating film that is the material of the bank 712 to lower the resistivity, thereby suppressing the generation of static electricity. At this time, the resistivity is 1 × 10 ⁶ ~ 1x10 ¹² Ωm (preferably 1 × 10 ⁸ ~ 1x10 ^Ten The added amount of carbon particles and metal particles may be adjusted so that the resistance becomes Ωm).
[0148]
A light emitting layer 713 is formed on the pixel electrode 711. Although only one pixel is shown in FIG. 17, in the present embodiment, light emitting layers corresponding to R (red), G (green), and B (blue) colors are separately formed. In this embodiment, the low molecular weight organic light emitting material is formed by the vapor deposition method. Specifically, a copper phthalocyanine (CuPc) film having a thickness of 20 nm is provided as a hole injection layer, and a tris-8-quinolinolato aluminum complex (Alq) having a thickness of 70 nm is formed thereon as a light emitting layer. _Three ) A laminated structure provided with a film. Alq _Three The emission color can be controlled by adding a fluorescent dye such as quinacridone, perylene, or DCM1.
[0149]
However, the above example is an example of an organic light emitting material that can be used as a light emitting layer, and it is not absolutely necessary to limit to this. A light emitting layer (a layer for emitting light and moving carriers therefor) may be formed by freely combining a light emitting layer, a charge transport layer, or a charge injection layer. For example, in the present embodiment, an example in which a low molecular weight organic light emitting material is used as a light emitting layer is shown, but a medium molecular weight organic light emitting material or a high molecular weight organic light emitting material may be used. Note that in this specification, an organic light-emitting material that does not have sublimation and has 20 or less molecules or a chain molecule length of 10 μm or less is referred to as a medium molecular organic light-emitting material. As an example of using a polymer organic light emitting material, a 20 nm polythiophene (PEDOT) film is provided by a spin coating method as a hole injection layer, and a paraphenylene vinylene (PPV) film of about 100 nm is provided thereon as a light emitting layer. Alternatively, a laminated structure may be used. If a PPV π-conjugated polymer is used, the emission wavelength can be selected from red to blue. It is also possible to use an inorganic material such as silicon carbide for the charge transport layer or the charge injection layer. Known materials can be used for these organic light emitting materials and inorganic materials.
[0150]
Next, a cathode 714 made of a conductive film is provided on the light emitting layer 713. In this embodiment, an alloy film of aluminum and lithium is used as the conductive film. Of course, a known MgAg film (magnesium and silver alloy film) may be used. As the cathode material, a conductive film made of an element belonging to Group 1 or Group 2 of the periodic table or a conductive film added with these elements may be used.
[0151]
When the cathode 714 is formed, the light emitting element 715 is completed. Note that the light-emitting element 715 here refers to a diode formed of a pixel electrode (anode) 711, a light-emitting layer 713, and a cathode 714.
[0152]
It is effective to provide a passivation film 716 so as to completely cover the light emitting element 715. As the passivation film 716, an insulating film including a carbon film, a silicon nitride film, or a silicon nitride oxide film is used, and the insulating film is used as a single layer or a combination thereof.
[0153]
At this time, it is preferable to use a film with good coverage as the passivation film, and it is effective to use a carbon film, particularly a DLC film. Since the DLC film can be formed in a temperature range from room temperature to 100 ° C., it can be easily formed over the light-emitting layer 713 having low heat resistance. In addition, the DLC film has a high blocking effect against oxygen and can suppress oxidation of the light-emitting layer 713. Therefore, the problem that the light emitting layer 713 is oxidized during the subsequent sealing process can be prevented.
[0154]
Further, a sealing material 717 is provided over the passivation film 716 and a cover material 718 is attached thereto. As the sealing material 717, an ultraviolet curable resin may be used, and it is effective to provide a substance having a moisture absorption effect or a substance having an antioxidant effect inside. In this embodiment, the cover material 718 is formed by forming a carbon film (preferably a DLC film) on both surfaces of a glass substrate, a quartz substrate, a plastic substrate (including a plastic film), or a flexible substrate. In addition to the carbon film, an aluminum film (AlON, AlN, AlO, etc.), SiN, or the like can be used.
[0155]
Thus, a light emitting device having a structure as shown in FIG. 17 is completed. Note that it is effective to continuously process the steps from the formation of the bank 712 to the formation of the passivation film 716 using a multi-chamber type (or in-line type) film formation apparatus without releasing to the atmosphere. . Further, it is possible to continuously process the process up to the step of bonding the cover material 718 without releasing to the atmosphere.
[0156]
Thus, n-channel TFTs 601 and 602, a switching TFT (n-channel TFT) 603 and a current control TFT (n-channel TFT) 604 are formed on the substrate 700.
[0157]
Furthermore, as described with reference to FIGS. 17A and 17B, an n-channel TFT which is resistant to deterioration due to the hot carrier effect can be formed by providing an impurity region overlapping with the gate electrode through an insulating film. Therefore, a highly reliable light emitting device can be realized.
[0158]
Further, in the present embodiment, only the configuration of the pixel portion and the drive circuit is shown. However, according to the manufacturing process of the present embodiment, other logic circuits such as a signal dividing circuit, a D / A converter, an operational amplifier, and a γ correction circuit are provided. Can be formed on the same insulator, and a memory and a microprocessor can also be formed.
[0159]
The light-emitting device manufactured as described above has a TFT manufactured using a uniformly annealed semiconductor film because it is irradiated with laser light that makes it very easy to make the energy distribution uniform. The operational characteristics and reliability of the light emitting device can be sufficient. And such a light-emitting device can be used as a display part of various electronic devices.
[0160]
Note that this embodiment can be freely combined with Embodiments 1 to 8.
[0161]
[Embodiment 12]
By applying the present invention, various semiconductor devices (active matrix liquid crystal display device, active matrix light emitting device, active matrix EC display device) can be manufactured. That is, the present invention can be applied to various electronic devices in which these electro-optical devices are incorporated in a display unit.
[0162]
Such electronic devices include video cameras, digital cameras, projectors, head-mounted displays (goggles type displays), car navigation systems, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, electronic books, etc.), etc. Can be mentioned. Examples thereof are shown in FIG. 18, FIG. 19, and FIG.
[0163]
FIG. 18A shows a personal computer, which includes a main body 3001, an image input portion 3002, a display portion 3003, a keyboard 3004, and the like. By applying the semiconductor device manufactured according to the present invention to the display portion 3003, the personal computer of the present invention is completed.
[0164]
FIG. 18B illustrates a video camera, which includes a main body 3101, a display portion 3102, an audio input portion 3103, operation switches 3104, a battery 3105, an image receiving portion 3106, and the like. The video camera of the present invention is completed by applying the semiconductor device manufactured according to the present invention to the display portion 3102.
[0165]
FIG. 18C shows a mobile computer (mobile computer), which includes a main body 3201, a camera portion 3202, an image receiving portion 3203, an operation switch 3204, a display portion 3205, and the like. By applying the semiconductor device manufactured according to the present invention to the display portion 3205, the mobile computer of the present invention is completed.
[0166]
FIG. 18D shows a goggle type display, which includes a main body 3301, a display portion 3302, an arm portion 3303, and the like. The display portion 3302 uses a flexible substrate as a substrate, and the goggle type display is manufactured by curving the display portion 3302. It also realizes a lightweight and thin goggle type display. By applying the semiconductor device manufactured according to the present invention to the display portion 3302, the goggle type display of the present invention is completed.
[0167]
FIG. 18E shows a player using a recording medium (hereinafter referred to as a recording medium) on which a program is recorded, and includes a main body 3401, a display portion 3402, a speaker portion 3403, a recording medium 3404, an operation switch 3405, and the like. This player uses a DVD (Digital Versatile Disc), CD, or the like as a recording medium, and can perform music appreciation, movie appreciation, games, and the Internet. By applying the semiconductor device manufactured according to the present invention to the display portion 3402, the recording medium of the present invention is completed.
[0168]
FIG. 18F illustrates a digital camera, which includes a main body 3501, a display portion 3502, an eyepiece portion 3503, an operation switch 3504, an image receiving portion (not shown), and the like. By applying the semiconductor device manufactured according to the present invention to the display portion 3502, the digital camera of the present invention is completed.
[0169]
FIG. 19A illustrates a front type projector, which includes a projection device 3601, a screen 3602, and the like. The front type projector of the present invention is completed by applying the semiconductor device manufactured according to the present invention to the liquid crystal display device 3808 constituting a part of the projection device 3601 and other driving circuits.
[0170]
FIG. 19B shows a rear projector, which includes a main body 3701, a projection device 3702, a mirror 3703, a screen 3704, and the like. By applying the semiconductor device manufactured according to the present invention to the liquid crystal display device 3808 constituting a part of the projection device 3702 and other driving circuits, the rear projector of the present invention is completed.
[0171]
Note that FIG. 19C illustrates an example of the structure of the projection devices 3601 and 3702 in FIGS. 19A and 19B. The projection devices 3601 and 3702 include a light source optical system 3801, mirrors 3802 and 3804 to 3806, a dichroic mirror 3803, a prism 3807, a liquid crystal display device 3808, a phase difference plate 3809, and a projection optical system 3810. The projection optical system 3810 is composed of an optical system including a projection lens. Although this embodiment showed the example of a three-plate type, it is not specifically limited, For example, a single plate type may be sufficient. Further, the practitioner may appropriately provide an optical system such as an optical lens, a film having a polarization function, a film for adjusting a phase difference, or an IR film in the optical path indicated by an arrow in FIG. Good.
[0172]
FIG. 19D shows an example of the structure of the light source optical system 3801 in FIG. In this embodiment, the light source optical system 3801 includes a reflector 3811, a light source 3812, lens arrays 3813 and 3814, a polarization conversion element 3815, and a condenser lens 3816. Note that the light source optical system illustrated in FIG. 19D is an example and is not particularly limited. For example, the practitioner may appropriately provide an optical system such as an optical lens, a film having a polarization function, a film for adjusting a phase difference, or an IR film in the light source optical system.
[0173]
However, the projector shown in FIG. 19 shows a case where a transmissive electro-optical device is used, and an application example in a reflective electro-optical device and a light-emitting device is not shown.
[0174]
FIG. 20A illustrates a mobile phone, which includes a main body 3901, an audio output portion 3902, an audio input portion 3903, a display portion 3904, operation switches 3905, an antenna 3906, and the like. By applying the semiconductor device manufactured according to the present invention to the display portion 3904, the cellular phone of the present invention is completed.
[0175]
FIG. 20B illustrates a portable book (electronic book), which includes a main body 4001, display portions 4002 and 4003, a storage medium 4004, operation switches 4005, an antenna 4006, and the like. By applying the semiconductor device manufactured according to the present invention to the display portions 4002 and 4003, the portable book of the present invention is completed. Portable books can be made as large as paperback books, making them easy to carry.
[0176]
FIG. 20C illustrates a display, which includes a main body 4101, a support base 4102, a display portion 4103, and the like. The display portion 4103 is manufactured using a flexible substrate, and a lightweight and thin display can be realized. In addition, the display portion 4103 can be curved. By applying the semiconductor device manufactured according to the present invention to the display portion 4103, the display of the present invention is completed. The display of the present invention is particularly advantageous when the screen is enlarged, and is advantageous for displays having a diagonal of 10 inches or more (particularly 30 inches or more).
[0177]
As described above, the application range of the present invention is extremely wide and can be applied to electronic devices in various fields. Further, the electronic device of the present embodiment can also be realized by using a configuration that is a combination of the first to ninth or tenth embodiments.
[0178]
【The invention's effect】
By adopting the configuration of the present invention, the following basic significance can be obtained.
(A) Laser light can be used effectively.
(B) The laser irradiation apparatus can be made compact.
(C) It is possible to greatly reduce the labor for laser maintenance.
(D) After satisfying the above advantages, the laser irradiation method and the laser irradiation apparatus for performing the laser irradiation can efficiently perform the laser beam irradiation. Further, in a semiconductor device typified by an active matrix liquid crystal display device, improvement in operating characteristics and reliability of the semiconductor device can be realized. Furthermore, the manufacturing cost of the semiconductor device can be reduced.
[Brief description of the drawings]
FIG. 1 is a diagram showing an example of the configuration of a laser irradiation apparatus of the present invention.
FIG. 2A is a graph showing the reflectance with respect to the wavelength in an amorphous silicon film at 55 nm.
(B) The figure which shows the transmittance | permeability with respect to the wavelength in an amorphous silicon film 55nm.
FIG. 3A is a graph showing reflectance with respect to wavelength in a crystalline silicon film at 55 nm.
(B) The figure which shows the transmittance | permeability with respect to the wavelength in crystalline silicon film 55nm.
FIG. 4A is a graph showing reflectivity with respect to wavelength in a 1737 glass substrate.
(B) The figure which shows the transmittance | permeability with respect to the wavelength in a 1737 glass substrate.
FIG. 5A is a graph showing the reflectance with respect to wavelength in a synthetic quartz glass substrate.
(B) The figure which shows the transmittance | permeability with respect to the wavelength in a synthetic quartz glass substrate.
FIG. 6 is a diagram showing an example of the configuration of a laser irradiation apparatus of the present invention.
FIG. 7 is a diagram showing an example of the configuration of a laser irradiation apparatus of the present invention.
FIG. 8 is a diagram showing an example of the configuration of a laser irradiation apparatus of the present invention.
FIG. 9 is a diagram showing an example of a method for crystallizing a semiconductor film using the present invention.
FIG. 10 is a diagram showing an example of a method for crystallizing a semiconductor film using the present invention.
FIG. 11 is a diagram showing an example of the relationship between the relative movement speed of laser light with respect to the substrate and the peak power on the irradiated surface using the present invention.
12 is a cross-sectional view illustrating a manufacturing process of a pixel TFT and a TFT of a driver circuit. FIG.
13 is a cross-sectional view illustrating a manufacturing process of a pixel TFT and a TFT of a driver circuit. FIG.
14 is a cross-sectional view illustrating a manufacturing process of a pixel TFT and a TFT of a driver circuit. FIG.
FIG. 15 is a top view illustrating a structure of a pixel TFT.
FIG. 16 is a cross-sectional view of an active matrix liquid crystal display device.
FIG 17 is a cross-sectional structure diagram of a driver circuit and a pixel portion of a light-emitting device.
FIG 18 illustrates an example of a semiconductor device.
FIG 19 illustrates an example of a semiconductor device.
FIG 20 illustrates an example of a semiconductor device.
FIG. 21 is a diagram showing an example of the configuration of a laser irradiation apparatus of the present invention.
FIG. 22 is a diagram showing an example of the configuration of a laser irradiation apparatus of the present invention.
[Explanation of symbols]
101 laser
102-104 lens
105 Jig
106-109 Jig direction
110, 111 substrate
120, 121 substrate
124 cylindrical lens
130, 131 substrate
141 laser
142-144 lens
155 prism
154 lens

Claims (29)

A laser oscillator;
A first jig for disposing a first substrate so that laser light oscillated from the laser oscillator is irradiated from a vertical direction;
A second jig for disposing the second substrate so that the laser beam oscillated from the laser oscillator is irradiated onto the second substrate when transmitted through the first substrate ;
A laser irradiation apparatus comprising: an optical system for condensing laser light transmitted through the first substrate between the first substrate and the second substrate . A laser oscillator;
A first jig for arranging the first substrate so as to be irradiated perpendicularly to the traveling direction of the laser light oscillated from the laser oscillator;
A second jig for disposing the second substrate so that the laser beam oscillated from the laser oscillator is irradiated onto the second substrate when transmitted through the first substrate ;
A laser irradiation apparatus comprising: an optical system for condensing laser light transmitted through the first substrate between the first substrate and the second substrate . A laser oscillator;
A first jig for arranging the first substrate so as to be irradiated obliquely with respect to the traveling direction of the laser light oscillated from the laser oscillator;
A second jig for disposing the second substrate so that the laser beam oscillated from the laser oscillator is irradiated onto the second substrate when transmitted through the first substrate ;
A laser irradiation apparatus comprising: an optical system for condensing laser light transmitted through the first substrate between the first substrate and the second substrate . In any one of Claims 1 thru | or 3,
The laser irradiation apparatus, wherein the first jig and the second jig are suspended and arranged. In any one of Claims 1 thru | or 4 ,
The laser irradiation apparatus, wherein the first substrate is one of a glass substrate, a quartz substrate, a plastic substrate, and a flexible substrate. In any one of Claims 1 thru | or 5 ,
The laser irradiation apparatus, wherein the second substrate is any one of a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, and a flexible substrate. In any one of claims 1 to 6,
The laser irradiation apparatus, wherein the first jig and the second jig are connected to each other. In any one of Claims 1 thru | or 7,
A laser irradiation apparatus, wherein a beam width irradiated on the first substrate by a laser beam oscillated from the laser oscillator is different from a beam width irradiated on the second substrate. In any one of Claims 1 thru | or 8,
The laser irradiation apparatus, wherein the first substrate and the second substrate have different sizes. In any one of Claims 1 thru | or 9,
The laser irradiation apparatus, wherein the first substrate and the second substrate have different heat resistance. The first substrate disposed so that the laser light oscillated from the laser oscillator is irradiated from the vertical direction, and the second substrate disposed so as to be irradiated to the second substrate when transmitted through the first substrate. 2 of the substrate a simultaneous irradiation, Relais chromatography the irradiation method,
A laser irradiation method, comprising: condensing laser light applied to the second substrate by an optical system disposed between the first substrate and the second substrate . The first substrate disposed perpendicular to the traveling direction of the laser light oscillated from the laser oscillator, and the second substrate disposed so as to irradiate the second substrate when transmitted through the first substrate. a irradiation, Relais over the irradiation method of the substrate at the same time,
A laser irradiation method, comprising: condensing laser light applied to the second substrate by an optical system disposed between the first substrate and the second substrate . The first substrate disposed obliquely with respect to the traveling direction of the laser light oscillated from the laser oscillator, and the second substrate disposed so as to irradiate the second substrate when transmitted through the first substrate. a irradiation, Relais over the irradiation method of the substrate at the same time,
A laser irradiation method, comprising: condensing laser light applied to the second substrate by an optical system disposed between the first substrate and the second substrate . In any one of Claims 11 thru | or 13,
The laser irradiation method, wherein the first substrate is one of a glass substrate, a quartz substrate, a plastic substrate, and a flexible substrate. In any one of Claims 11 thru | or 14,
The laser irradiation method, wherein the second substrate is any one of a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, and a flexible substrate. In any one of Claims 11 thru | or 15,
The laser irradiation method, wherein the first substrate and the second substrate move at different speeds. In any one of Claims 11 thru | or 16,
A laser irradiation method, wherein a beam width irradiated on the first substrate by a laser beam oscillated from the laser oscillator is different from a beam width irradiated on the second substrate. In any one of Claims 11 thru | or 17,
The laser irradiation method, wherein the first substrate and the second substrate have different sizes. In any one of Claims 11 thru | or 18,
The laser irradiation method, wherein the first substrate and the second substrate have different heat resistance. Forming an amorphous semiconductor film on the first substrate;
The amorphous semiconductor film is irradiated with laser light oscillated from a laser oscillator to form a crystalline semiconductor film,
A simultaneously the manufacturing method of the first binding-crystalline you irradiating laser light transmitted through the substrate to a second substrate the semiconductor film,
A method for manufacturing a crystalline semiconductor film, wherein laser light applied to the second substrate is condensed by an optical system disposed between the first substrate and the second substrate . Forming a first amorphous semiconductor film on a first substrate and a second amorphous semiconductor film on a second substrate;
Irradiating the first amorphous semiconductor film with laser light oscillated from a laser oscillator to form a first crystalline semiconductor film;
A simultaneous manufacturing method of the first second crystalline semiconductor film you formed sintered-crystalline semiconductor film with the laser light transmitted through the substrate by irradiating the second amorphous semiconductor film,
A method for manufacturing a crystalline semiconductor film, wherein laser light applied to the second substrate is condensed by an optical system disposed between the first substrate and the second substrate . Forming a crystalline semiconductor film on the first substrate and an amorphous semiconductor film on the second substrate;
Annealing by irradiating the crystalline semiconductor film with laser light oscillated from a laser oscillator,
A simultaneous manufacturing method of the first of the laser light transmitted through the substrate amorphous semiconductor film forming-crystalline semiconductor film by irradiating that form a crystalline semiconductor film,
A method for manufacturing a crystalline semiconductor film, wherein laser light applied to the second substrate is condensed by an optical system disposed between the first substrate and the second substrate . Forming an amorphous semiconductor film over the first substrate and a crystalline semiconductor film doped with an impurity element over the second substrate;
The amorphous semiconductor film is irradiated with laser light oscillated from a laser oscillator to form a crystalline semiconductor film,
A simultaneous manufacturing method of the first substrate the transmitted laser beam the crystalline semiconductor film forming-crystalline semiconductor film you activate the impurity element by irradiating,
A method for manufacturing a crystalline semiconductor film, wherein laser light applied to the second substrate is condensed by an optical system disposed between the first substrate and the second substrate . 24. In any one of claims 20 to 23,
The method for manufacturing a crystalline semiconductor film, wherein the first substrate is any one of a glass substrate, a quartz substrate, a plastic substrate, and a flexible substrate. 25. In any one of claims 20 to 24,
The method for manufacturing a crystalline semiconductor film, wherein the second substrate is any one of a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, and a flexible substrate. In any one of Claims 20 to 25,
The method for manufacturing a crystalline semiconductor film, wherein the first substrate and the second substrate move at different speeds. In any one of claims 20 to 26,
A method for manufacturing a crystalline semiconductor film, wherein a beam width irradiated on the first substrate by a laser beam oscillated from the laser oscillator is different from a beam width irradiated on the second substrate. In any one of claims 20 to 27,
The method for manufacturing a crystalline semiconductor film, wherein the first substrate and the second substrate have different sizes. In any one of claims 20 to 28,
The method for manufacturing a crystalline semiconductor film, wherein the first substrate and the second substrate have different heat resistance.

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