JP4079866B2 - Lead frame and resin-encapsulated semiconductor device using the same - Google Patents

Description

  The present invention relates to a lead frame for a semiconductor device that requires heat dissipation characteristics, a resin-encapsulated semiconductor device using the lead frame, and a manufacturing method thereof.

  In recent years, in order to cope with the reduction in size and weight of electronic devices, high-density mounting of semiconductor components such as resin-encapsulated semiconductor devices is required, and along with this, semiconductor components are becoming smaller and thinner. In addition, while being small and thin, the number of pins has increased, and a high-density small and thin resin-encapsulated semiconductor device has been demanded. As the number of functions of semiconductor elements has increased, the demand for heat dissipation characteristics has increased, so a thin resin semiconductor device capable of realizing high heat dissipation has been demanded. A structure in which substrate wiring is possible on the lower surface when a resin-encapsulated semiconductor device is mounted on a substrate is desirable.

Hereinafter, a conventional resin-encapsulated semiconductor device capable of realizing high heat dissipation will be described.
14A and 14B are diagrams showing a conventional resin-encapsulated semiconductor device. FIG. 14A is a plan view, FIG. 14B is a bottom view, and FIG. 14C is A-A1 in FIG. 14B. It is sectional drawing of a location.

  As shown in FIG. 14, the semiconductor element 102 is mounted on the die pad portion 101 of the lead frame, and the semiconductor element 102 and the inner lead portion 103 are electrically connected by a thin metal wire 104. The outer periphery of the semiconductor element 102 and the inner lead portion 103 on the die pad portion 101 is sealed with a sealing resin 105. The side surface of the sealing resin 105 and the end portion of the inner lead portion 103 are disposed on the same surface, and the resin-sealed semiconductor device in which the bottom surface of the die pad portion 101 is exposed from the sealing resin 105. is there. Further, the tip of the inner lead portion 103 is exposed as the external terminal 106. Since the die pad 101 is exposed from the back surface of the resin-encapsulated semiconductor device, the die pad portion is connected to the substrate by solder bonding or the like when mounting on the substrate, and the heat dissipation of the semiconductor element is promoted by the substrate. It is possible to achieve high heat dissipation.

Next, a conventional method for manufacturing a resin-encapsulated semiconductor device will be described.
FIG. 15 is a process sectional view showing a conventional method for manufacturing a resin-encapsulated semiconductor device.
FIG. 15A is a plan view of the lead frame, and FIG. 15B is a cross-sectional view of the lead frame. First, as shown in the figure, when a frame frame, a die pad portion 101 on which a semiconductor element is mounted, a suspension lead portion that supports the die pad portion 101, and a semiconductor element are mounted in the frame frame, the mounted semiconductor A lead frame having a beam-like inner lead portion 103 that is electrically connected by a connecting means such as an element and a thin metal wire is prepared.

Next, as shown in FIG. 15C, the semiconductor element 102 is bonded onto the die pad portion 101 of the lead frame with an adhesive (die bonding step).
Next, as shown in FIG. 15D, the electrode pad (not shown) on the surface of the semiconductor element 102 mounted on the die pad portion 101 and the tip end portion of the inner lead portion 103 of the lead frame are connected to the metal thin wire 104. Connect by (wire bonding process).

Thereafter, as shown in FIG. 15E, the outer periphery of the die pad portion 101, the semiconductor element 102, and the inner lead portion 103 is sealed with a sealing resin 105 in a state where the sealing sheet is in close contact with the lead frame. In this step, since the sealing sheet is closely attached to the bottom surface of the lead frame and sealed, the region excluding the bottom surface of the die pad portion 101, the suspension lead portion, the semiconductor element 102, the region excluding the bottom surface of the inner lead portion 103, and The connection region of the thin metal wire 104 is sealed, and after sealing, the bottom surface of the die pad portion 101 is exposed from the bottom surface of the sealing resin 105. The exposed die pad portion 101 is connected to the substrate by soldering or the like when mounted on the substrate, and the heat dissipation of the semiconductor element can be promoted by the substrate, so that high heat dissipation can be realized (for example, patents) Reference 1).
Japanese Patent Laid-Open No. 10-256460

  However, in the conventional resin-encapsulated semiconductor device and its manufacturing method, the die pad portion is exposed on the back surface of the resin-encapsulated semiconductor device in order to obtain high heat dissipation. Therefore, it is difficult to install wiring on the substrate directly below, and this has been a big problem in the situation where high-density mounting is progressing. Furthermore, since the die pad on which the semiconductor element is mounted is exposed, the flow of the sealing resin is divided vertically from the positional relationship of the cross-sectional structure. A difference occurs in the flow rate of the sealing resin, and the flow rate of the resin is reduced at the lower part of the semiconductor element and accelerated at the upper part of the semiconductor element. There was a problem that molding defects such as unfilled and voids were likely to occur. Also, with the conventional structure, the resin volume difference between the top and bottom of the semiconductor element is large, the warpage of the resin molded product becomes large after resin sealing, the lead processing is difficult, the flatness of the external terminal is deteriorated, the quality There was a problem that it was not preferable in terms of reliability.

  The present invention solves the above-described conventional problems, and provides a lead frame that can be wired to a substrate directly under which a die pad is located, and is free of sealing resin, voids, etc. It is an object of the present invention to provide a lead frame, a resin-encapsulated semiconductor device using the same, and a method of manufacturing the lead frame, which are less likely to cause defects in a molded product, are easy to process and form a lead, and can improve the flatness of an external terminal. And

In order to achieve the above conventional purposes, lead frame of claim 1 of the present invention is a lead frame used in a resin sealed semiconductor device mounted with semiconductor elements, and the framework, the framework hanging is connected to upset by a lead, and a holding portion for holding the area is small the semiconductor element than the semiconductor element, has a larger opening than the area of the holding portion, the holding portion to the opening crowded fit, said the suspension lead and the heat radiating member in contact, connected to said framework, said the semiconductor element and the connecting means is constituted by a lead portion electrically connected to the holding portion from the heat dissipation member upper surface It is located at a high level.

  The lead frame according to claim 2 is the lead frame according to claim 1, wherein a corner portion of the opening of the heat dissipation member is chamfered at a contact portion between the heat dissipation member and the suspension lead, and the heat dissipation member and the suspension lead are formed. Is characterized by close contact.

4. The resin-encapsulated semiconductor device according to claim 3, wherein the resin-encapsulated semiconductor device is upset and connected to a suspension lead, has a smaller area than the semiconductor element, and holds an opening larger than the area of the holding part. A heat-dissipating member fitted into the opening and brought into contact with the suspension lead, a semiconductor element mounted on the holding part at a position higher than the upper surface of the heat-dissipating member, and the heat dissipation An inner lead portion disposed around the member and electrically connected to the semiconductor element by a fine metal wire; an external terminal for electrical connection to the outside; the holding portion; the heat dissipation member; the semiconductor element; characterized Rukoto such and a sealing resin for sealing the thin metal wires.

The resin-encapsulated semiconductor device according to claim 4 is the resin-encapsulated semiconductor device according to claim 3, wherein a corner portion of the opening of the heat dissipation member is chamfered at a contact portion between the heat dissipation member and the suspension lead. The heat dissipation member and the suspension lead are in close contact with each other.
The resin-encapsulated semiconductor device according to claim 5 is the resin-encapsulated semiconductor device according to claim 3, wherein the heat dissipation member and the back surface of the semiconductor element are insulated by a resin layer having a thickness of 200 μm or less. It is characterized by that.

The resin-encapsulated semiconductor device according to claim 6 is the resin-encapsulated semiconductor device according to claim 3, wherein the external terminal is a bottom surface that is an opposite surface of a surface connected to the thin metal wire of the inner lead portion. It is a part and is exposed from the bottom surface of the sealing resin .

  As described above, it is possible to provide a lead frame that can be wired to the substrate directly under the die pad, and it is difficult to cause molding product defects such as unfilling of sealing resin and voids, and processing of leads can be performed. It is easy to provide a lead frame capable of improving the flatness of the external terminal, a resin-encapsulated semiconductor device using the lead frame, and a manufacturing method thereof.

  As described above, the lead frame of the present invention, the resin-encapsulated semiconductor device using the same, and the manufacturing method thereof can provide a lead frame that can be wired to the substrate directly under the die pad, A lead frame that is less prone to molding defects such as unfilled sealing resin and voids, is easy to process and mold leads, and can improve the flatness of external terminals, and a resin-encapsulated semiconductor device using the lead frame And a manufacturing method thereof.

Hereinafter, a lead frame, a resin-encapsulated semiconductor device using the lead frame, and a manufacturing method thereof according to the present invention will be described with reference to the drawings.
(Embodiment 1)
First, the lead frame in the first embodiment will be described.

  1A is a plan view showing a lead frame according to Embodiment 1 of the present invention, FIG. 1B is a bottom view of the lead frame according to Embodiment 1 of the present invention, and FIG. It is sectional drawing of AA1 location of a).

  The lead frame according to Embodiment 1 of the present invention is made of a metal plate used for a normal lead frame made of copper alloy or 42 alloy (Fe—Ni) or the like, and has a thickness of 0.10 mm to 0.20 mm. Degree. The heat sink is made of a copper alloy and has the same thickness.

  The structure of the lead frame is arranged in the frame frame 1, in the frame frame 1, the heat radiating member 2 for promoting heat radiation from the semiconductor element, and around the heat radiating member 2. Part of the inner lead part 3 to be connected and a part of the bottom surface opposite to the inner lead part 3 become the external terminal 4, and the semiconductor element is held in the region where the semiconductor element on the heat radiating member 2 is mounted. The holding portion 5 and the holding portion 5 are smaller than the area of the semiconductor element, and an opening 6 is provided in the heat radiating member 2, and the opening 6 is larger than the area of the holding portion 5 holding the semiconductor element, and the holding The portion 5 is connected to the frame 1 by a suspension lead 7, and the suspension lead 7 is upset 8 so that the holding portion 5 becomes the top of the head, and the holding portion 5 that has been upset 8 opens the heat dissipation member 2. Fitted into part 6, a lead frame, wherein the heat radiating member 2 is held portion 5 upper surface higher than the top surface.

  With this configuration, the heat dissipating member 2 is housed in the resin-encapsulated semiconductor device, so that high heat dissipation is achieved, and at the same time, the wiring on the substrate has a degree of freedom even immediately below the resin-encapsulated semiconductor element when mounted on the substrate. It becomes possible.

  Further, at the contact portion between the heat radiating member 2 and the suspended lead 7 upset 8, the corner portion of the opening 6 of the heat radiating member 2 is chamfered and has a tapered portion 9. By this processing, the heat dissipating member 2 can be stabilized and positioned. Furthermore, since a large contact area of the suspension lead 7 can be secured at the tapered portion 9, heat generated from the semiconductor element can be dissipated.

  FIG. 2 is a plan view and a cross-sectional view showing the resin-encapsulated semiconductor device in the first embodiment of the present invention. 2A is a plan view of the resin-encapsulated semiconductor device of the present embodiment, FIG. 2B is a bottom view thereof, and FIG. 2C is a cross-sectional view taken along the line B-B1 in FIG. FIG. 2D is a cross-sectional view taken along the line C-C1 in FIG.

  FIG. 2 is a resin-encapsulated semiconductor device using the lead frame of FIG. 1 and is called P-QFN (Plastic Quad Flat Non-Leaded Package) or P-ILGA (Plastic Interstitial Land Grid Array Package). The lead frame of the present embodiment and the resin-encapsulated semiconductor device using the lead frame can be reduced in size because the external terminals 4 are present on the bottom surface of the resin-encapsulated semiconductor device as compared with P-QFP.

  The resin-encapsulated semiconductor device of the present embodiment includes a heat dissipating member 2 that promotes heat dissipating from the semiconductor element 10, and an inner member that is disposed around the heat dissipating member 2 and is electrically connected to the semiconductor element 10 through the metal thin wire 11. A lead portion 3; an external terminal 4 that is a part of a bottom surface that is an opposing surface of the inner lead portion 3; and a holding portion 5 that holds the semiconductor element 10 in a region where the semiconductor element 10 on the heat dissipation member 2 is mounted. The holding part 5 is smaller than the area of the semiconductor element 10, the opening 6 is provided in the heat radiating member 2, and the opening 6 is larger than the area of the holding part 5 holding the semiconductor element 10, and the holding part 5 is at the top of the head. The holding lead 5 is upset 8 so that the holding portion 5 is fitted into the opening 6 of the heat radiating member 2, and the semiconductor element 10 is mounted on the holding portion 5 positioned higher than the upper surface of the heat radiating member 2. And said half The electrode pad of the body element 10 and the inner lead portion 3 are connected by a thin metal wire 11, and the outer periphery of the connection region of the semiconductor element 10, the heat dissipation member 2, the inner lead portion 3, and the thin metal wire 11 is encapsulating resin 12. This is a resin-encapsulated semiconductor device that is molded by the process, and the bottom surface of the inner lead portion 3 becomes the external terminal 4 and is exposed.

  With this configuration, the heat dissipating member 2 is housed in the resin-encapsulated semiconductor device, so that high heat dissipation is achieved, and at the same time, the wiring on the substrate has a degree of freedom even immediately below the resin-encapsulated semiconductor element when mounted on the substrate. It becomes possible.

  Furthermore, by providing the heat radiating member 2 with the tapered portion 9, the heat radiating member 2 can be brought into close contact with the inclined portion of the suspension lead 7, and when the suspension lead 7 is upset 8, Since the volume of the sealing resin can be made uniform and the warpage of the resin molded product after the resin sealing can be suppressed, the lead can be easily processed and the flatness of the external terminals can be improved.

  Also, a resin-encapsulated semiconductor device is manufactured using these lead frames, in particular, the heat dissipation member 2 and the back surface of the semiconductor element 10 are insulated by a resin layer having a thickness of 200 μm or less. can do. The heat radiated from the semiconductor element 10 is dissipated to the heat radiating plate 2 with a thin resin layer interposed therebetween. Further, the thin resin layer on the back surface of the heat radiating member 2 and the semiconductor element 10 can suppress interface peeling between the back surface of the semiconductor element 10 and the heat radiating plate 2 to a minimum. This is because heat dissipation can be transmitted sufficiently effectively if the thin resin layer is 200 μm or less.

Next, a method for manufacturing the resin-encapsulated semiconductor device in the first embodiment will be described with reference to FIG.
First, as shown in the plan view of the resin-encapsulated semiconductor device in the present embodiment in FIG. 3A and the cross-sectional view of the D-D1 location in FIG. In the frame, a heat radiating member 2 that promotes heat radiation from the semiconductor element 10, an inner lead portion 3 that is disposed around the heat radiating member 2 and is electrically connected to the semiconductor element 10 by a connecting means such as a thin metal wire, A holding portion 5 that holds the semiconductor element 10 in a region where the semiconductor element 10 is mounted on the upper part of the heat dissipation member 2, and includes an external terminal 4 that is a part of a bottom surface that is a facing surface of the inner lead portion 3; The holding part 5 is smaller than the area of the semiconductor element 10, the opening 6 is provided in the heat radiating member 2, the opening 6 is larger than the area of the holding part 5 holding the semiconductor element 10, and the holding part 5 The suspension lead 7 The suspending lead 7 is upset so that the holding portion is the top of the head frame, and the upset holding portion 5 is fitted into the opening 6 of the heat radiating member 2, A lead frame in which the upper surface of the holding unit 5 is positioned higher is prepared.

Next, as shown in FIG. 3C, the semiconductor element 10 is connected to the holding portion 5 with an adhesive on the prepared lead frame.
Next, as shown in FIG. 3D, the electrode pad of the semiconductor element 10 and the inner lead portion 3 are connected by a thin metal wire 11.

  Finally, as shown in FIG. 3E, the connection region of the semiconductor element 10, the heat radiating member 2, the inner lead portion 3, and the fine metal wire 11 on the lead frame with the sealing sheet in close contact with the lead frame. Each enclosure is sealed with a sealing resin 12.

By manufacturing in this way, after sealing, the external terminals 4 are exposed from the bottom surface of the sealing resin 12, and the heat dissipation member 2 is built in the sealing resin.
4A, 4B, and 4C are views showing the flow of the sealing resin in the sealing step.

  In the process of molding each outer periphery of the connection region of the semiconductor element 10 on the lead frame, the heat radiating member 2, the inner lead part 3, and the fine metal wire 11 with the sealing resin 12 when resin sealing is performed, FIG. As shown in FIGS. 3B and 3C, first, the semi-finished lead frame up to the step of FIG. 3D is attached to the upper sealing mold 13 and the lower sealing mold 14 through the sealing sheet 22. Place it so that it is sandwiched between. Next, the tablet-shaped thermosetting epoxy resin charged in the pot 15 is pushed in by the plunger 16. The pushed epoxy resin is melted into a liquid state by the heat of the pot 15, the plunger 16 and the sealing molds 13, 14 that have been heated to 150 to 200 ° C. in advance, passes through the runner 17, and is resin-sealed from the gate 18. It is injected into the product part of the semiconductor device. The flow of the resin is that the suspension leads are upset so that the flow of the sealing resin on the upper and lower sides of the semiconductor element 10 is made uniform, and the upper and lower sealing resins are arranged near the air bend 19 facing the gate 18. This is achieved by preventing the remaining of air on the lower surface or the upper surface of the semiconductor element 10, that is, prevention of molding product defects such as unfilling of sealing resin and voids.

  Here, the amount of bending of the suspension lead is changed and the upset amount 8 is adjusted to balance the upper and lower resin thicknesses with respect to the heat radiating member 2 and the semiconductor element 10 in the thickness direction in the semiconductor device. Can be made uniform. Furthermore, a uniform resin layer of 200 μm or less can be formed in the gap between the heat dissipation member 2 and the semiconductor element 10. The resin thickness in the gap between the heat dissipation member 2 and the semiconductor element 10 is actually controlled to 50 μm to 100 μm. When the thickness is 50 μm or less, the resin does not sufficiently fill the gap between the heat radiating member 2 and the semiconductor element 10, and the heat radiating member 2 contacts the semiconductor element 10. Further, when the gap between the heat radiating member 2 and the semiconductor element 10 is larger than 200 μm, the heat radiated from the semiconductor element 10 does not propagate to the heat radiating member 2 more efficiently.

In addition, the difference in resin volume between the upper and lower semiconductor elements is reduced, and warping of the resin molded product can be suppressed after resin sealing, making lead processing easier, improving the flatness of external terminals, and improving quality and reliability. Can be made.
(Embodiment 2)
Next, as a second embodiment, an embodiment in a P-QFP (Plastic Qaud Flat Package) with a built-in heat sink will be described.

  FIG. 5A is a plan view showing a lead frame according to Embodiment 2 of the present invention. FIG. 5B is a bottom view of the lead frame of the present embodiment. 9 and 10 are diagrams showing examples in which the opening of the heat dissipation member is opened in another shape.

  The lead frame according to the second embodiment of the present invention is made of a metal plate used for a normal lead frame made of copper alloy or 42 alloy (Fe—Ni) or the like, and has a thickness of 0.10 mm to 0.20 mm. The heat sink is made of a copper alloy and has a similar thickness.

  The lead frame is composed of a frame frame 1, a heat radiating member 2 having a function of radiating heat generated from the semiconductor element 10, a holding part 5 for the semiconductor element 10, and the holding part 5 in the frame frame 1. The suspending lead 7 fixed to 2, the beam-shaped inner lead portion 3 having a tip portion disposed around the heat radiating member 2, and the plurality of inner leads 3 are connected and fixed in a frame shape by a dam bar 20, and resin sealed The outer lead portion 21 extends across the dam bar 20 serving as a resin stopper at the time of stopping, and is electrically connected to the outside. The heat dissipating member 2 is heat bonded to the bottom surface of the tip of the inner lead portion 3 with polyimide resin. In this embodiment, polyimide resin is formed on the entire upper surface of the heat dissipating member 2 and heated at about 300 ° C. It is glued.

  Specifically, in the upper part of the heat dissipation member 2 of the lead frame in the present embodiment, the holding portion 5 that holds the semiconductor element 10 is suspended in the center of the upper surface of the heat dissipation member 2 in the region where the semiconductor element 10 is mounted. 7 is arranged. The holding part 5 is smaller than the area of the semiconductor element 10 and is larger than the area of the holding part 5 that holds the semiconductor element 10 by providing the opening 6 in the heat dissipation member 2 directly below the holding part 5, FIG. The opening 6 of the heat radiating member 2 having a shape as shown in FIGS. 9 and 10 is provided.

  Here, in FIG. 5, the holding portion 5 is supported by the four suspension leads 7, but may be two or three. For example, by eliminating one suspension lead on the resin injection side, the resin fluidity at the time of resin injection can be improved, and the occurrence rate of voids (bubbles) and unfilled can be improved. Further, the bottom surface of the suspension lead 7 and the surface of the heat dissipation member 2 may be bonded in the same manner as the inner lead 3 in order to improve the heat dissipation from the semiconductor element 10. Further, when bonded, the connecting portion between the suspension lead 7 and the dam bar 20 may be cut out in order to improve the resin fluidity at the time of resin injection.

  In addition, on the heat dissipation member 2, the holding portion 5 that holds the semiconductor element 10 is provided on an upper surface, if necessary, more than the surface of the inner lead 3 that is electrically connected to the semiconductor element 10 by connection means such as a thin metal wire. Is located (see FIG. 12).

  Here, normally, in a semiconductor device that does not have the heat radiating member 2, the holding portion 5 is located on the lower surface than the surface of the inner lead 3. However, in the present embodiment, the amount of bending of the suspension lead is changed, and the upset amount 8 is adjusted so that the holding portion 5 is positioned above the surface of the inner lead 3 and is in the thickness direction in the semiconductor device. The resin flow can be made uniform by balancing the upper and lower resin thicknesses with respect to the heat radiation member 2 and the semiconductor element 10. Further, a uniform resin layer is formed in the gap between the heat dissipation member 2 and the semiconductor element 10. This is because the semiconductor element 10 and the heat dissipating member 2 are in contact with each other to inhibit the flow of the resin and prevent the void (air pool) and moisture resistance from deteriorating. Further, the resin thickness in the gap between the heat radiating member 2 and the semiconductor element 10 is actually controlled to the thickness of the inner lead + the upset amount 8.

  In addition, on the surface of the lead frame in the second embodiment of the present invention, a plating layer is constituted by three layers of a nickel (Ni) plating layer, a palladium (Pd) plating layer, and a gold (Au) plating layer, or Solder plating such as tin-silver (Sn-Ag) and tin-bismuth (Sn-Bi) is partially applied. The thickness of plating is 1 μm or less for Au plating and Pd plating, and several μm or less for Ag plating.

  In addition, the lead frame according to the second embodiment of the present invention is not composed of one of the patterns as shown in FIGS. 5, 9, and 10, but can be formed by connecting to the left, right, up and down. .

6A and 6B are a plan view and a cross-sectional view showing a resin-encapsulated semiconductor device according to the second embodiment of the present invention.
For easy understanding, the right half of the semiconductor element 10 in the plan view of FIG. FIG. 7 is a process cross-sectional view showing the manufacturing process of the resin-encapsulated semiconductor device according to the embodiment of the present invention, and FIGS. 8A, 8B, and 8C are views of the resin in the resin-encapsulating process. It is a figure which shows a flow.

Hereinafter, the manufacturing process will be described.
First, the semiconductor element 10 is mounted with an adhesive on the lead frame holding portion 5 in Embodiment 2 of the present invention, and the adhesive is thermally cured. The adhesive is mainly composed of an epoxy resin containing an Ag filler. Next, the electrode pad of the semiconductor element 10 and each inner lead 3 are connected by the thin metal wire 11. The fine metal wires 11 mainly have a gold (Au) purity of 99.99% or more and a diameter of 15 to 30 μm, and are joined by an ultrasonic / thermocompression method using a wire bonder. Although not shown, while the lead frame is heated on a heater plate at 180 ° C. to 250 ° C., the fine metal wire 11 is passed through the capillary tool, and ultrasonic vibration and load are applied to the electrode pad side of the semiconductor element 10 in advance. The formed metal balls are pressed and joined, moved to the inner lead 3 side, and the fine metal wires 11 are pressed and broken with a capillary tool. At this time, the movement of the capillary tool is controlled on the wire bonder side so that the fine metal wire 8 has an arbitrary loop shape (loop height).

  In the process of molding each outer periphery of the connection region of the semiconductor element 10 on the lead frame, the heat radiating member 2, the inner lead portion 3 and the metal thin wire 11 with the sealing resin 12 when resin sealing is performed, FIG. As shown in FIGS. 7B and 7C, the semifinished lead frame up to the step of FIG. 7B is placed so as to be sandwiched between the upper sealing mold 13 and the lower sealing mold 14. The tablet-shaped thermosetting epoxy resin charged in the pot 15 is pushed in by the plunger 16. The pushed epoxy resin is melted into a liquid state by the heat of the pot 15, the plunger 16 and the sealing molds 13, 14 that have been heated to 150 to 200 ° C. in advance, passes through the runner 17, and is resin-sealed from the gate 18. It is injected into the product part of the semiconductor device. The resin can be sealed by joining the upper sealing resin and the lower sealing resin of the heat radiating member 2 directly below the semiconductor element 10. For this reason, the difference between the top and bottom sealing resin flow at the top and bottom of the heat dissipating member 2 can be reduced, and the resin flow speed can be interpolated at the lower surface of the heat dissipating member 2, and molded products such as unfilled sealing resin and voids can be obtained. It is what prevents the defect.

  In particular, in the semiconductor device (QFP) manufacturing method in the present embodiment, the gap between the heat dissipation member 2 and the back surface of the semiconductor element 10 can be filled with resin without partial delay when filling the resin in the semiconductor device. This prevents the void (air pool) or the heat radiating member 2 from contacting the semiconductor element 10.

  As shown in FIG. 7C, after the above-described resin sealing step is completed, the boundary portion of the sealing resin 12 is lead-cut (dam bar cut) at the portion of the dam bar 20, and each outer lead portion 21 is cut. Separated, the frame 1 is removed, and the outer lead portion 21 is processed and molded. As shown in the figure, the shape of the two-stage outer lead portion 21 is called a gull wing, and as a name of a resin-encapsulated semiconductor device, P-SOP (Plastic Small Outline Package), P-QFP (Plastic Quad Flat Package), etc. is called.

9 and 10 are plan views showing a lead frame according to the second embodiment of the present invention. 9 and 10 show an embodiment in which the opening of the heat dissipating member of FIG. 5 is opened in a different shape.
Thus, it has the effect which gives a difference in the peeling progress of the sealing resin 12 and the thermal radiation member 2, and the flow of resin by making an opening part into another shape.

  11 and 12 are sectional views showing a resin-encapsulated semiconductor device according to the second embodiment of the present invention. In contrast to FIG. 11, in FIG. 12, upset 8 processing is applied to the holding portion of the semiconductor element 10.

  As shown in FIG. 12, the resin flow above and below the heat radiating member 2 can be controlled by positioning the holding portion 5 higher than the surface of the inner lead portion 3. The optimum design value of the upset amount 8 is determined by the sealing molding conditions and the size of the semiconductor element 10. When the size of the semiconductor element 10 is increased, or when the semiconductor elements 10 are stacked in two stages, the resin flow at the upper part of the heat sink 2 becomes slow. On the contrary, when the size of the semiconductor element 10 is reduced, the resin flow at the upper part of the heat sink 2 is accelerated. The difference in the resin flow above and below the heat dissipating member 2 is adjusted by the optimum design value of the upset amount 8, and the shift (displacement) in the thickness direction in the resin-encapsulated semiconductor device of the heat dissipating member 2 and the semiconductor element 10 is suppressed, As a result, warpage after molding and exposure of fine metal wires can be suppressed.

  As described above, in the resin-encapsulated semiconductor device according to the second embodiment, the sealing resin 12 above and below the heat dissipation member 2 is not completely partitioned by the heat dissipation member 2. The difference in the volume of 12 can alleviate the occurrence of warpage and improve the sealing molding quality such as warpage of the resin-encapsulated semiconductor device. Thereby, the warpage of the resin-encapsulated semiconductor device is reduced, and the outer lead portion 21 can be easily molded. Further, in order to increase the area in which the semiconductor element 10 is brought into contact with the sealing resin 12 without fixing the semiconductor element 10 to the heat radiating member 2 with an adhesive or the like, stress is generated by the adhesive that joins the holding portion 10 and the semiconductor element 7 or the like. Is a highly reliable resin-encapsulated semiconductor device in which package cracks are prevented and cracks are prevented.

FIG. 13 is a cross-sectional view and a bottom view showing the resin-encapsulated semiconductor device according to the second embodiment of the present invention.
As shown in FIGS. 13A and 13B, by exposing the heat radiating member 2 to the bottom surface of the resin-encapsulated semiconductor device, it is possible to directly radiate heat to the mounting substrate. It is also possible to make the resin-encapsulated semiconductor device thinner. For example, when the body thickness of the resin-encapsulated semiconductor device is 0.80 mm and the mounting height is 1.00 mm or less, P-VSOP (Plastic Very Thin Small Package) and P-VQFP (Plastic Very Thin Qud Flat) Package) can be realized.

  As described above, the lead frame of the present invention, the resin-encapsulated semiconductor device using the same, and the manufacturing method thereof have heat dissipation characteristics, improve the quality of warped or unfilled encapsulated products, and improve moisture resistance at the same time. In addition, it is possible to realize a resin-encapsulated semiconductor device in which package cracking is prevented and reliability is improved.

  The lead frame, the resin-encapsulated semiconductor device using the lead frame, and the manufacturing method thereof according to the present invention can provide a lead frame that can be wired to the substrate immediately below where the die pad is located. Mold lead defects such as unfilled and voids are unlikely to occur, lead processing and molding are easy, the flatness of external terminals can be improved, and lead frames for semiconductor devices that require heat dissipation characteristics and It is useful for the resin-sealed semiconductor device to be used and the manufacturing method thereof.

The figure which shows the lead frame in Embodiment 1 of this invention. The figure which shows the resin-sealed semiconductor device in Embodiment 1 of this invention The figure which shows the manufacturing process of the resin sealing type semiconductor device in Embodiment 1 of this invention. Sectional drawing which shows the sealing process of the resin sealing type semiconductor device in Embodiment 1 of this invention The figure which shows the lead frame in Embodiment 2 of this invention. The figure which shows the resin-sealed semiconductor device in Embodiment 2 of this invention The figure which shows the manufacturing process of the resin sealing type semiconductor device in Embodiment 2 of this invention. Sectional drawing which shows the sealing process of the resin sealing type semiconductor device in Embodiment 2 of this invention The top view which shows the lead frame in Embodiment 2 of this invention The top view which shows the lead frame which opened the opening part of the heat radiating member in Embodiment 2 of this invention in another shape Sectional drawing which shows the lead frame in Embodiment 2 of this invention The figure which illustrates the position of the holding | maintenance part of the lead frame in Embodiment 2 of this invention The figure which shows the resin-sealed semiconductor device which exposed the heat radiating member in Embodiment 2 of this invention on the bottom face A diagram showing a conventional resin-encapsulated semiconductor device Process sectional drawing which shows the manufacturing method of the conventional resin sealing type semiconductor device

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Frame frame 2 Heat dissipation member 3 Inner lead part 4 External terminal 5 Holding part 6 Opening part 7 Hanging lead 8 Upset 9 Tapered part 10 Semiconductor element 11 Metal fine wire 12 Sealing resin 13 Upper sealing mold 14 Lower sealing mold 15 Pot 16 Plunger 17 Runner 18 Gate 19 Air Bend 20 Dam Bar 21 Outer Lead Part 22 Sealing Sheet 101 Die Pad Part 102 Semiconductor Element 103 Inner Lead Part 104 Metal Fine Wire 105 Sealing Resin 106 External Terminal

Claims (6)

A lead frame used in a resin-encapsulated semiconductor device on which a semiconductor element is mounted,
A frame,
Said coupled with upset by suspension leads to the framework, the holding portion for holding the semiconductor element than the area is small the semiconductor element,
A heat radiating member having an opening larger than the area of the holding part, fitting the holding part into the opening, and contacting the suspension lead ;
Connected to said framework, said the semiconductor element and the connecting means is constituted by a lead portion electrically connected to the lead frame, wherein the holding portion is positioned high than the heat dissipation member upper surface.   The lead frame according to claim 1, wherein a corner portion of the opening of the heat dissipation member is chamfered at a contact portion between the heat dissipation member and the suspension lead, and the heat dissipation member and the suspension lead are in close contact with each other. A holding unit that is connected to the suspension lead by being upset, has a smaller area than the semiconductor element, and holds the semiconductor element;
A heat radiating member having an opening larger than the area of the holding part, fitting the holding part into the opening, and contacting the suspension lead;
A semiconductor element mounted on the holding portion at a position higher than the upper surface of the heat dissipation member;
An inner lead portion disposed around the heat dissipating member and electrically connected to the semiconductor element by a fine metal wire;
An external terminal for electrical connection with the outside;
The holding portion, the heat dissipation member, a resin-encapsulated semiconductor device according to claim Rukoto such and a sealing resin for sealing the semiconductor element and the metal thin wire. 4. The resin-encapsulated semiconductor according to claim 3, wherein a corner portion of the opening of the heat dissipation member is chamfered at a contact portion between the heat dissipation member and the suspension lead, and the heat dissipation member and the suspension lead are in close contact with each other. apparatus.   4. The resin-encapsulated semiconductor device according to claim 3, wherein the heat radiating member and the back surface of the semiconductor element are insulated by a resin layer having a thickness of 200 [mu] m or less. 4. The resin according to claim 3, wherein the external terminal is a part of a bottom surface that is an opposite surface of a surface connected to the thin metal wire of the inner lead portion, and is exposed from the bottom surface of the sealing resin. Sealed semiconductor device .

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