JP4067868B2 - オンチップセンス増幅器を備える抵抗型クロスポイントメモリの較正方法 - Google Patents

オンチップセンス増幅器を備える抵抗型クロスポイントメモリの較正方法 Download PDF

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Publication number
JP4067868B2
JP4067868B2 JP2002132918A JP2002132918A JP4067868B2 JP 4067868 B2 JP4067868 B2 JP 4067868B2 JP 2002132918 A JP2002132918 A JP 2002132918A JP 2002132918 A JP2002132918 A JP 2002132918A JP 4067868 B2 JP4067868 B2 JP 4067868B2
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Japan
Prior art keywords
rxptm
cell
cells
array
sense amplifier
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Expired - Fee Related
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JP2002132918A
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English (en)
Japanese (ja)
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JP2003022668A (ja
JP2003022668A5 (enExample
Inventor
フレデリック・エイ・パーナー
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of JP2003022668A5 publication Critical patent/JP2003022668A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2254—Calibration

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
JP2002132918A 2001-05-14 2002-05-08 オンチップセンス増幅器を備える抵抗型クロスポイントメモリの較正方法 Expired - Fee Related JP4067868B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/855,118 US6504779B2 (en) 2001-05-14 2001-05-14 Resistive cross point memory with on-chip sense amplifier calibration method and apparatus
US09/855118 2001-05-14

Publications (3)

Publication Number Publication Date
JP2003022668A JP2003022668A (ja) 2003-01-24
JP2003022668A5 JP2003022668A5 (enExample) 2005-04-07
JP4067868B2 true JP4067868B2 (ja) 2008-03-26

Family

ID=25320397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002132918A Expired - Fee Related JP4067868B2 (ja) 2001-05-14 2002-05-08 オンチップセンス増幅器を備える抵抗型クロスポイントメモリの較正方法

Country Status (4)

Country Link
US (1) US6504779B2 (enExample)
EP (1) EP1260988A3 (enExample)
JP (1) JP4067868B2 (enExample)
CN (1) CN100474439C (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030023922A1 (en) * 2001-07-25 2003-01-30 Davis James A. Fault tolerant magnetoresistive solid-state storage device
US6831854B2 (en) * 2002-08-02 2004-12-14 Unity Semiconductor Corporation Cross point memory array using distinct voltages
US6804145B2 (en) * 2002-11-01 2004-10-12 Hewlett-Packard Development Company, L.P. Memory cell sensing system and method
US6868025B2 (en) * 2003-03-10 2005-03-15 Sharp Laboratories Of America, Inc. Temperature compensated RRAM circuit
US6873543B2 (en) * 2003-05-30 2005-03-29 Hewlett-Packard Development Company, L.P. Memory device
US6898134B2 (en) * 2003-07-18 2005-05-24 Hewlett-Packard Development Company, L.P. Systems and methods for sensing a memory element
US7006388B2 (en) * 2003-08-28 2006-02-28 Hewlett-Packard Development Company, L.P. Memory with reference-initiated sequential sensing
US6894938B2 (en) * 2003-10-03 2005-05-17 Hewlett-Packard Development Company, L.P. System and method of calibrating a read circuit in a magnetic memory
US6990030B2 (en) * 2003-10-21 2006-01-24 Hewlett-Packard Development Company, L.P. Magnetic memory having a calibration system
KR100988087B1 (ko) 2003-11-24 2010-10-18 삼성전자주식회사 Ｍｒａｍ 특성 분석 장치 및 그 분석 방법
US6999366B2 (en) * 2003-12-03 2006-02-14 Hewlett-Packard Development Company, Lp. Magnetic memory including a sense result category between logic states
US7400670B2 (en) 2004-01-28 2008-07-15 Rambus, Inc. Periodic calibration for communication channels by drift tracking
US7130235B2 (en) * 2004-09-03 2006-10-31 Hewlett-Packard Development Company, L.P. Method and apparatus for a sense amplifier
US7390616B2 (en) * 2005-01-12 2008-06-24 International Business Machines Corporation Method for post lithographic critical dimension shrinking using post overcoat planarization
US7239537B2 (en) * 2005-01-12 2007-07-03 International Business Machines Corporation Method and apparatus for current sense amplifier calibration in MRAM devices
US7646625B2 (en) * 2007-06-29 2010-01-12 Qimonda Ag Conditioning operations for memory cells
US20090103350A1 (en) * 2007-10-18 2009-04-23 Michael Kund Method of Testing an Integrated Circuit, Method of Manufacturing an Integrated Circuit, and Integrated Circuit
CN101842843B (zh) * 2007-11-01 2014-06-11 飞思卡尔半导体公司 Mram测试
WO2013055332A1 (en) 2011-10-12 2013-04-18 Hewlett-Packard Development Company, L.P. Select device for cross point memory structures
CN103366791B (zh) * 2012-03-30 2017-04-12 硅存储技术公司 即时可调整读出放大器
KR20140035558A (ko) 2012-09-14 2014-03-24 삼성전자주식회사 가변 저항 메모리 장치 및 그 동작 방법
US9025367B1 (en) * 2013-11-26 2015-05-05 Realtek Semiconductor Corp. Method and apparatus for sensing tunnel magneto-resistance
US9911491B2 (en) 2014-07-31 2018-03-06 Hewlett Packard Enterprise Development Lp Determining a resistance state of a cell in a crossbar memory array
DE102017203455B4 (de) * 2016-03-02 2024-08-01 Infineon Technologies Ag Übergangsüberwachung bei resistivem Speicher
CN107154272B (zh) * 2016-03-03 2020-07-03 东芝存储器株式会社 电流检测电路
US10170162B2 (en) * 2017-05-23 2019-01-01 Sandisk Technologies Llc Sense amplifier calibration
JP2020161201A (ja) * 2019-03-27 2020-10-01 キオクシア株式会社 半導体記憶装置
CN112447257B (zh) * 2019-08-30 2022-10-14 中电海康集团有限公司 测试结构和测试方法
CN115188401B (zh) * 2021-04-07 2025-10-14 浙江驰拓科技有限公司 保护mram数据的装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10162585A (ja) * 1996-12-03 1998-06-19 Sony Corp トリミング機能付きセンスアンプを備えた半導体メモリ素子
US6262625B1 (en) * 1999-10-29 2001-07-17 Hewlett-Packard Co Operational amplifier with digital offset calibration
US6259644B1 (en) * 1997-11-20 2001-07-10 Hewlett-Packard Co Equipotential sense methods for resistive cross point memory cell arrays
US6188615B1 (en) * 1999-10-29 2001-02-13 Hewlett-Packard Company MRAM device including digital sense amplifiers

Also Published As

Publication number Publication date
JP2003022668A (ja) 2003-01-24
US20020167838A1 (en) 2002-11-14
EP1260988A2 (en) 2002-11-27
EP1260988A3 (en) 2004-08-18
CN1385859A (zh) 2002-12-18
CN100474439C (zh) 2009-04-01
US6504779B2 (en) 2003-01-07

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