JP4038786B2 - キャッシュメモリにおける漏洩電力の低減方法及び装置 - Google Patents

キャッシュメモリにおける漏洩電力の低減方法及び装置 Download PDF

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Publication number
JP4038786B2
JP4038786B2 JP2001327071A JP2001327071A JP4038786B2 JP 4038786 B2 JP4038786 B2 JP 4038786B2 JP 2001327071 A JP2001327071 A JP 2001327071A JP 2001327071 A JP2001327071 A JP 2001327071A JP 4038786 B2 JP4038786 B2 JP 4038786B2
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Prior art keywords
cache
cache line
memory
power
line
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JP2001327071A
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Japanese (ja)
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JP2002182980A (ja
JP2002182980A5 (enExample
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カクシラス ステファノス
ダブリュ． ディオデトー フィリップ
ラエ マックレラン，ジュニヤ ハーバート
ナーリカー ギリジャ
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Agere Systems LLC
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Agere Systems LLC
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Dram (AREA)
JP2001327071A 2000-10-25 2001-10-25 キャッシュメモリにおける漏洩電力の低減方法及び装置 Expired - Fee Related JP4038786B2 (ja)

Applications Claiming Priority (4)

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US24317300P 2000-10-25 2000-10-25
US09/865,847 US6983388B2 (en) 2000-10-25 2001-05-25 Method and apparatus for reducing leakage power in a cache memory by using a timer control signal that removes power to associated cache lines
US60/243173 2001-05-25
US09/865847 2001-05-25

Related Child Applications (1)

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JP2007181585A Division JP2007317213A (ja) 2000-10-25 2007-07-11 キャッシュメモリにおける漏洩電力の低減方法及び装置

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JP2002182980A JP2002182980A (ja) 2002-06-28
JP2002182980A5 JP2002182980A5 (enExample) 2004-10-14
JP4038786B2 true JP4038786B2 (ja) 2008-01-30

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JP2001327071A Expired - Fee Related JP4038786B2 (ja) 2000-10-25 2001-10-25 キャッシュメモリにおける漏洩電力の低減方法及び装置
JP2007181585A Ceased JP2007317213A (ja) 2000-10-25 2007-07-11 キャッシュメモリにおける漏洩電力の低減方法及び装置

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JP2007181585A Ceased JP2007317213A (ja) 2000-10-25 2007-07-11 キャッシュメモリにおける漏洩電力の低減方法及び装置

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US (2) US6983388B2 (enExample)
EP (1) EP1202287B1 (enExample)
JP (2) JP4038786B2 (enExample)

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JPWO2013080426A1 (ja) 2011-12-01 2015-04-27 パナソニックＩｐマネジメント株式会社 熱を考慮した構造を持つ集積回路装置、三次元集積回路、三次元プロセッサ装置、及びプロセススケジューラ
JP5565425B2 (ja) * 2012-02-29 2014-08-06 富士通株式会社 演算装置、情報処理装置および演算方法
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Publication number Publication date
US20060041769A1 (en) 2006-02-23
JP2002182980A (ja) 2002-06-28
EP1202287A2 (en) 2002-05-02
US20020049918A1 (en) 2002-04-25
US7472302B2 (en) 2008-12-30
US6983388B2 (en) 2006-01-03
EP1202287A3 (en) 2004-04-21
JP2007317213A (ja) 2007-12-06
EP1202287B1 (en) 2012-05-09

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