JP4028475B2 - Silicon mold for transfer, method for producing the same, and transfer method to adhesive thin film using silicon mold for transfer - Google Patents

Description

  The present invention mainly relates to a transfer silicon mold used for producing an electrode-adhesive thin film as an electrical connection portion of connectors, switches, relays, etc. in various electric and electronic devices, a manufacturing method thereof, and a transfer silicon mold. The present invention relates to a transfer method to the used adhesive thin film.

  Conventionally, as a technology related to this type of transfer silicon mold (which has been researched and developed but is not an invention according to known literature), there is a configuration as shown in FIG.

  This transfer silicon mold has silicon oxide formed on one surface side of the entire silicon substrate 1 in which convex portions are formed at a predetermined interval on one surface side and grooves 5 are formed between the convex portions. In the state in which the film 2 is formed with a predetermined film thickness, the top of the convex portion is used as the transfer pattern portion 4.

  When manufacturing such a transfer silicon mold, first, at the substrate processing stage, convex portions are formed at a predetermined interval on one surface side by etching or the like, and a groove portion 5 is formed between the convex portions. In this way, after the entire surface of the silicon substrate 1 is deformed into a concavo-convex shape, the silicon oxide film 2 is predetermined on the entire surface of the silicon substrate 1 by thermal oxidation or the like in the next oxide film formation stage. It is sufficient to obtain a transfer silicon mold in which the top of the convex portion is the transfer pattern portion 4.

  5 (a) to 5 (e) are enlarged side views showing the transfer method to the adhesive thin film 9 using the transfer silicon mold with the main part partially broken for each stage. FIG. (B) relates to the transfer silicon mold at the transfer metal film forming stage, and (c) illustrates the transfer silicon mold at the adhesive thin film attaching stage. FIG. 4D shows the state of adhesion of the adhesive thin film 9, and FIG. 4D shows the pulling of the transfer silicon mold and the adhesive thin film 9 in the transition from the adhesive thin film attaching stage to the transfer metal pattern terminal transfer stage in FIG. FIG. 6E relates to the initial peeling state, and FIG. 5E relates to the transfer state after peeling of the transfer silicon pattern and the adhesive thin film 9 at the transfer metal pattern terminal transfer stage.

  That is, here, as shown in FIG. 5A, the top of the convex portion where the silicon oxide film 2 is formed on the silicon substrate 1 that has been deformed into a concavo-convex shape by etching or the like is used as a transfer pattern portion 4. When transferring the structure to the adhesive thin film 9 using the transfer silicon mold, first, as shown in FIG. 5B, in the transfer metal film formation stage, the entire surface of the transfer silicon mold is formed by sputtering or the like. A transfer metal film 6 such as gold or nickel is formed on the silicon oxide film 2 so as to be covered with the transfer metal film 6. However, when the transfer metal film 6 is formed on the silicon oxide film 2, the film thickness of the flat part is generally thicker than other parts (such as the side wall part).

  Next, as shown in FIG. 5 (c), in the adhesive thin film attaching step, the adhesive material 7 is formed by laminating the adhesive material 7 on the base material 8 on the transfer metal film 6 in the vicinity of the transfer pattern portion 4. The thin film 9 is pressed and pasted from the adhesive material 7 side. Here, the adhesive thin film 9 is attached to the transfer metal film 6 in the vicinity of the transfer pattern portion 4 with a predetermined load. At this time, the transfer metal film 6 in the vicinity of the transfer pattern portion 4 is partially adhered to the adhesive material. 7 is in a state of being recessed.

  Further, as shown in FIG. 5D, in the transfer metal pattern terminal transfer stage, the adhesive thin film 9 is initially peeled off from the transfer metal film 6 in the vicinity of the transfer pattern portion 4 in the direction indicated by the arrow. In the initial peeling state, the transfer metal film 6 in the vicinity of the transfer pattern portion 4 is partially cracked at an unspecified portion as shown in the figure.

  Subsequently, as shown in FIG. 5E, in the transfer metal pattern terminal transfer stage, the adhesive thin film 9 is completely peeled away from the transfer metal film 6 near the transfer pattern portion 4 in the direction indicated by the arrow. As a result, the transfer metal film 6 is partially peeled off at a predetermined location on the adhesive material 7, whereby the transfer metal pattern terminal 6 'is transferred. Here, the adhesive peeling due to the cutting in the transfer metal film 6 occurs from the crack portion described above.

Incidentally, the structure itself of the adhesive thin film 9 (adhesive thin film with electrode) with the transfer metal pattern terminal 6 ′ obtained in this way is well known, and for example, a structure using it as a transfer member (see Patent Document 1) can be mentioned. .
JP 11-261199 A (summary)

  In the case of the transfer silicon type described above, the silicon oxide film having a predetermined thickness is formed on the entire surface of the silicon substrate, and the top of the convex portion is used as a transfer pattern portion. When transferring to a thin film, the adhesion of the transfer metal film covering the silicon oxide film used for transfer is the same (uniform) across the entire surface, so that the transfer metal film sticks from the adhesive material of the adhesive thin film. As shown in FIG. 5 (d), when the film is peeled off, cracks are easily generated in unspecified areas, which often causes the transfer metal film to be unnecessary from the peripheral edge in the vicinity of the transfer pattern part to the groove part side. The part is cut and adhesive peeled off at the part, and as a result, the shape of the transferred metal pattern terminal transferred as shown in FIG. Transfer with There is a problem that the door is difficult.

  In addition, if a silicon mold for transfer, which is difficult to transfer in a stable and good shape as described above, is used for a long time, the end of the silicon mold is likely to be chipped. There is also a problem that sex cannot be secured.

  The present invention has been made to solve such problems, and its technical problem is to provide a transfer silicon mold having excellent durability capable of stably performing transfer with a good shape and a method for producing the same. Another object is to provide a transfer method to an adhesive thin film using the transfer silicon mold.

  According to the present invention, the silicon oxide film is formed on the whole of the one surface side in the silicon substrate in which the convex portions are formed at a predetermined interval on the one surface side and the groove portions are formed between the convex portions. In the transfer silicon mold in which the top portion of the convex portion is formed with a predetermined film thickness and the top portion of the convex portion is a transfer pattern portion, the surface portion excluding the inner peripheral region of the top portion of the convex portion on the silicon oxide film is A transfer silicon mold is obtained in which the inner peripheral edge region at the top of the convex portion, which is covered with the adhesion-strengthening film and the silicon oxide film is exposed, serves as a transfer pattern portion. In this transfer silicon mold, it is preferable that the adhesion-strengthening film has a convex portion protruding from the transfer pattern portion in the vicinity of the periphery of the top portion of the convex portion.

  On the other hand, according to the present invention, the entire surface side of the silicon substrate is uneven so that convex portions are formed at a predetermined interval on one surface side, and a groove portion due to a recess is formed between the convex portions. A substrate processing step for deforming the substrate into a substrate, and an oxide film forming step in which a top portion of the convex portion is formed as a transfer pattern portion by forming a silicon oxide film with a predetermined film thickness on the entire surface of the silicon substrate. In the manufacturing method of the transfer silicon mold, the adhesion enhancing film forming step of forming the adhesion enhancing film on the silicon oxide film so as to cover the entire surface of the silicon oxide film with the adhesion enhancing film, and the adhesion force Removing the adhesion-strengthening film in the inner peripheral region at the top of the convex portion covered with the reinforcing film to expose the silicon oxide film, and then removing the adhesion-strengthening film as a transfer pattern portion Production of transfer silicon mold The law can be obtained. In this transfer silicon mold manufacturing method, in the adhesion strengthening film removal step, the removal of the adhesion enhancing film in the inner peripheral region at the top of the convex portion is performed in the vicinity of the peripheral edge of the top of the convex portion. It is preferable to carry out such that the protruding portion of the adhesion-strengthening film that protrudes is formed as the remaining portion.

  On the other hand, according to the present invention, there is provided a transfer method to an adhesive thin film using any one of the above transfer silicon molds, wherein the transfer pattern portion in which the adhesion enhancing film and the silicon oxide film in the transfer silicon mold are exposed. A transfer metal film forming step for forming the transfer metal film on the adhesion reinforcing film and the transfer pattern portion so as to cover the entire surface including the transfer metal film, and a transfer metal film in the vicinity of the transfer pattern portion Adhesive thin film pasting step in which an adhesive thin film formed by laminating an adhesive material on a substrate is pressed from the adhesive material side, and the adhesive thin film is pulled from the transfer metal film near the transfer pattern portion. A transfer metal pattern terminal transfer step having a transfer metal pattern terminal transfer step provided by transferring and transferring a transfer metal pattern terminal obtained by adhesive peeling of the transfer metal film to a predetermined portion of the adhesive material by peeling and separating is obtained. . In this transfer method to the adhesive thin film, in the transfer metal film formation stage, the transfer metal film is formed in the vicinity of the peripheral edge of the top of the convex part so as to protrude beyond the peripheral area at the top of the convex part. It is preferable.

  In the case of the transfer silicon mold of the present invention, a silicon oxide film having a predetermined film thickness is formed on the entire surface of the silicon substrate that has been processed to be uneven, whereas the top of the convex portion on the surface of the silicon oxide film. Since the area other than the pattern part for transfer in the peripheral area is covered with an adhesion-strengthening film, when transferring to an adhesive thin film formed by laminating an adhesive material on a substrate using this, The adhesion of the transfer metal film used for the transfer covering the adhesion-enhancing film and the transfer pattern portion is strengthened on the adhesion-enhanced film, and the transfer metal film adheres from the adhesive material of the adhesive thin film. When peeled off, the adhesive metal is peeled off easily and stably in the area on the pattern part for transfer. As a result, the transferred metal pattern terminal to be transferred has a good shape, which is stable and has good shape and good durability. You can transfer Moreover according transfer silicon type structure can be easily manufactured at bamboo adding implementing a known substrate processing steps and in addition to the oxide film formation step, adhesion enhanced layer removal step and adhesion enhanced layer forming step. In particular, in this transfer silicon mold, the end of the silicon mold is not directly exposed as a structure in which the adhesion-enhancing film has a protrusion protruding from the transfer pattern near the periphery of the top of the protrusion. In addition, when transferring to the adhesive thin film using the transfer silicon mold, a protruding portion is formed in which the transfer metal film protrudes in the vicinity of the periphery of the top of the protrusion from the inner peripheral region at the top of the protrusion. Since the transfer to the adhesive thin film is performed after that, the recesses between the protrusions of the transfer metal film can be used as the transfer pattern part, so that the transfer can be performed more stably and with a good shape and the durability. This makes it possible to mass-produce high-quality transfer metal pattern terminals having a desired shape in which extra portions are reduced as much as possible.

  The transfer silicon mold of the present invention has a silicon oxide formed on one surface side of a silicon substrate in which convex portions are formed at predetermined intervals on one surface side and grooves are formed between the convex portions. The surface of the silicon oxide film excluding the inner peripheral area of the top of the projection, with the basic structure using the top of the projection as the transfer pattern in the state where the film is formed with a predetermined film thickness A region in the periphery at the top of the convex portion where the portion is covered with the adhesion-strengthening film and the silicon oxide film is exposed is used as a transfer pattern portion.

  If transfer to the adhesive thin film is performed using this transfer silicon mold, the adhesion of the transfer metal film used for the transfer covering the adhesion strengthening film and the transfer pattern portion is applied on the adhesion strengthening film. When the transfer metal film is peeled off from the adhesive material of the adhesive thin film, it is peeled off stably and easily in the region on the transfer pattern portion.

  FIG. 1 is a side view showing a partially broken basic configuration of a transfer silicon mold according to Embodiment 1 of the present invention.

  This transfer silicon mold has silicon oxide formed on one surface side of the entire silicon substrate 1 in which convex portions are formed at a predetermined interval on one surface side and grooves 5 are formed between the convex portions. The surface from the groove 5 on the silicon oxide film 2 to the vicinity of the periphery of the top of the convex portion is covered with the adhesive strength enhancement film 3 with respect to the film 2 formed with a predetermined film thickness. The inner peripheral area of the top of the convex portion where the uncovered silicon oxide film 2 is exposed is used as the transfer pattern portion 4. Further, the adhesion enhancing film 3 has a convex portion protruding from the transfer pattern portion 4 in the vicinity of the periphery of the top portion of the convex portion.

  FIG. 2 is an enlarged side view showing a part of the manufacturing method of the silicon mold for transfer as shown in FIG. (C) relates to the adhesion-enhanced film formation stage, and (d) relates to the adhesion-enhanced film removal stage.

  Here, when the transfer silicon mold having the structure as shown in FIG. 1 is manufactured, first, at the substrate processing stage as shown in FIG. 2 is formed, and the entire surface of the silicon substrate 1 is deformed into a concavo-convex shape so that a groove portion 5 is formed between the convex portions. Then, an oxidation as shown in FIG. In the film formation stage, a silicon oxide film 2 is formed with a predetermined film thickness on the entire surface of the silicon substrate 1 by thermal oxidation or the like, and then an adhesion enhancing film as shown in FIG. In the formation step, the adhesion enhancing film 3 is formed on the silicon oxide film 2 so as to cover the entire surface of the silicon oxide film 2 with the adhesion enhancing film 3 such as chromium or titanium by sputtering or the like, and then finally As shown in FIG. In the step of removing the adhesion-enhancing film, a photoresist mask having an opening only at a portion to be the transfer pattern portion 4 is formed by photolithography, etc., and etching such as chromium or titanium is performed to remove unnecessary photoresist. By removing, the adhesion enhancing film 3 in the peripheral area at the top of the convex portion covered with the adhesion enhancing film 3 is removed to expose the silicon oxide film 2 and then for transfer. The pattern portion 4 indicates that these steps may be performed.

  However, in the adhesion-strengthening film removal step shown in FIG. 2D, the removal of the adhesion-strengthening film 3 in the inner peripheral region at the top of the convex portion is performed near the periphery of the top of the convex portion. 4 is performed so that the convex portion formed by the adhesion-strengthening film 3 projecting from 4 is formed as the remaining portion, whereby the adhesion of the transfer metal film when the convex portion by the adhesion-strengthening film 3 is transferred to the adhesive thin film. At the time of peeling, chipping at the end of the silicon mold is prevented and the mechanical strength is improved.

  3 (a) to 3 (e) are enlarged side views showing the transfer method to the adhesive thin film 9 using the transfer silicon mold, with the main part partially broken for each stage. FIG. (B) relates to the transfer silicon mold at the transfer metal film forming stage, and (c) illustrates the transfer silicon mold at the adhesive thin film attaching stage. FIG. 4D shows the state of adhesion of the adhesive thin film 9, and FIG. 4D shows the pulling of the transfer silicon mold and the adhesive thin film 9 in the transition from the adhesive thin film attaching stage to the transfer metal pattern terminal transfer stage in FIG. FIG. 6E relates to the initial peeling state, and FIG. 5E relates to the transfer state after peeling of the transfer silicon pattern and the adhesive thin film 9 at the transfer metal pattern terminal transfer stage.

  In other words, as shown in FIG. 3A, the surface of the silicon oxide film 2 formed on the silicon substrate 1 deformed into a concavo-convex shape by etching or the like is an inner peripheral region of the top of the convex portion. Except for the structure in which the inner peripheral area of the top of the convex part, which is covered with the adhesion strengthening film 3 and the silicon oxide film 2 is exposed, is the transfer pattern part 4 (as described above, the vicinity of the peripheral part of the top of the convex part When the transfer to the adhesive thin film 9 is performed using a transfer silicon mold (provided with a convex portion formed by the adhesion-strengthening film 3 protruding from the transfer pattern portion 4), first, as shown in FIG. In the transfer metal film formation stage, the entire surface including the adhesion enhancing film 3 in the transfer silicon mold and the transfer pattern portion 4 exposing the silicon oxide film 2 by sputtering or the like is made of gold, nickel, or the like. With transfer metal film 6 To form a transfer metal film 6 on the adhesion reinforcing layer 3 and on the transfer pattern section 4 to Migihitsuji. However, also in this case, when the transfer metal film 6 is formed on the silicon oxide film 2 and the transfer pattern portion 4, the film thickness of the flat portion is generally thicker than other portions (side wall portions, etc.). Then, in particular, the transfer metal film 6 is formed in the vicinity of the periphery of the top of the protrusion so as to form a protrusion that protrudes from the inner peripheral region at the top of the protrusion.

  Next, as shown in FIG. 3 (c), the adhesive material 7 is laminated on the base material 8 in the vicinity of the transfer pattern portion 4 covered with the transfer metal film 6 in the adhesive thin film attaching step. The resulting adhesive thin film 9 is pressed and pasted from the adhesive material 7 side. Here, the adhesive thin film 9 is affixed to the transfer metal film 6 near the transfer pattern portion 4 with a predetermined load. At this time, the convex portion of the transfer metal film 6 is embedded in the adhesive material 7. Become.

  Further, as shown in FIG. 3D, in the transfer metal pattern terminal transfer stage, the adhesive thin film 9 is initially peeled off from the transfer metal film 6 in the vicinity of the transfer pattern portion 4 in the direction indicated by the arrow. In the initial peeling state, the transfer metal film 6 in the vicinity of the transfer pattern portion 4 is partially cracked inside the protruding portion as shown by the circled region in the drawing. Here, the protruding portion of the transfer metal film 6 forms a step, and a crack is easily generated inside the protruding portion having a thin film thickness.

  Subsequently, as shown in FIG. 3E, in the transfer metal pattern terminal transfer stage, the adhesive thin film 9 is completely peeled away from the transfer metal film 6 near the transfer pattern portion 4 in the direction indicated by the arrow. As a result, the transfer metal film 6 is partially adhesively peeled off at a predetermined position of the adhesive material 7, thereby transferring the transfer metal pattern terminal 6 ″. It arises from the crack location inside the protrusion part of the transfer metal film 6 demonstrated in (1).

  That is, the shape of the transfer metal pattern terminal 6 ″ here is better than the shape of the transfer metal pattern terminal 6 ′ described in FIG. Therefore, it is shown that the transfer can be performed stably and in a good shape with good durability, particularly in the transfer silicon mold according to Example 1, the adhesion reinforcing film 3 is formed in the vicinity of the periphery of the top of the convex portion. As a structure having a projecting portion protruding from the transfer pattern portion 4, the end portion of the silicon mold is not directly exposed, and a transfer metal film is used for transfer to the adhesive thin film using the transfer silicon mold. 6 is formed in the vicinity of the periphery of the top of the protrusion so that the protrusion protrudes from the inner peripheral region at the top of the protrusion, thereby forming the recess formed between the protrusions of the transfer metal film 6. After serving as Since the transfer to the deposited thin film 9 is performed, the transfer can be performed more stably and in a good shape with good durability, and the transfer metal pattern terminal 6 ″ can have a desired shape in which extra portions are reduced as much as possible. Can be mass-produced as high quality.

It is the side view which fractured | ruptured and showed the basic structure of the silicon | silicone mold for transfer which concerns on Example 1 of this invention. FIG. 2 is an enlarged side view showing a part of the manufacturing method of the transfer silicon mold shown in FIG. 1 with a part broken away, wherein (a) relates to a substrate processing stage, and (b) relates to an oxide film forming stage. , (C) relates to the adhesion-enhanced film formation stage, and (d) relates to the adhesion-enhanced film removal stage. FIG. 2 is an enlarged side view showing the transfer method to the adhesive thin film using the transfer silicon mold shown in FIG. 1 with the main part partially broken for each stage, wherein (a) relates to the transfer silicon mold in the initial stage. , (B) relates to the transfer silicon mold in the transfer metal film forming stage, (c) relates to the adhesion state of the transfer silicon mold and the adhesive thin film in the adhesive thin film attaching stage, and (d) corresponds to (c). (E) is the transfer silicon pattern transfer stage in the transfer metal pattern terminal transfer stage. The present invention relates to a transfer state after peeling off the mold and the adhesive thin film. It is the side view which fractured and showed the basic composition of the conventional transfer silicon type. FIG. 5 is an enlarged side view showing the transfer method to the adhesive thin film using the transfer silicon mold shown in FIG. 4 with the main part partially broken for each stage, and (a) relates to the transfer silicon mold in the initial stage. , (B) relates to the transfer silicon mold in the transfer metal film forming stage, (c) relates to the adhesion state of the transfer silicon mold and the adhesive thin film in the adhesive thin film attaching stage, and (d) corresponds to (c). (E) is the transfer silicon pattern transfer stage in the transfer metal pattern terminal transfer stage. The present invention relates to a transfer state after peeling off the mold and the adhesive thin film.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 Silicon oxide film 3 Adhesion-strengthening film 4 Transfer pattern part 5 Groove part 6 Transfer metal film 6 ', 6 "Transfer metal pattern terminal 7 Adhesive material 8 Base material 9 Adhesive thin film

Claims (4)

Convex portions are formed at a predetermined interval on one surface side, and a silicon oxide film is formed with a predetermined film thickness on the entire one surface side of the silicon substrate in which a groove portion is formed between the convex portions. In the transfer silicon mold in which the top part of the convex part in the deposited state is the pattern part for transfer, the surface portion excluding the inner peripheral area of the top part of the convex part on the silicon oxide film has enhanced adhesion. A region in the periphery of the top of the convex portion, which is covered with a film and the silicon oxide film is exposed, is used as the transfer pattern portion, and the adhesion enhancing film is formed in the vicinity of the peripheral edge of the top of the convex portion. A silicon mold for transfer, characterized by having a convex part protruding from the pattern part for use. A substrate processing step of deforming the entire surface of the silicon substrate into a concavo-convex shape so that convex portions are formed on the one surface side at a predetermined interval, and a groove portion is formed between the convex portions; And a transfer silicon mold having an oxide film forming step in which a top portion of the convex portion is formed as a transfer pattern portion by forming a silicon oxide film with a predetermined film thickness on the entire one surface side of the silicon substrate. In the manufacturing method, an adhesion enhancing film forming step of forming the adhesion enhancing film on the silicon oxide film so as to cover the entire surface of the silicon oxide film with the adhesion enhancing film, and Removing the adhesion-strengthening film in the inner peripheral region at the top of the covered convex portion to expose the silicon oxide film, and then removing the adhesion-strengthening film as the transfer pattern portion; Yes, and strength the adhesion The film removal step, to be performed as the convex portion by the adhesive force reinforcement layer said adhesion strengthening film was projected than the transfer pattern portion in the vicinity of the peripheral edge of the top portion of the protrusion removal is formed as the balance A method for producing a transfer silicon mold. A claim 1 Symbol placement transfer method to the adhesive film using a transfer silicon type, and said silicon oxide film and the adhesion reinforcing layer in the transfer silicon type is exposed the transfer pattern section A transfer metal film forming step of forming the transfer metal film on the adhesion strengthening film and the transfer pattern portion so as to cover the entire surface including the transfer metal film, and the transfer metal film in the vicinity of the transfer pattern portion An adhesive thin film pasting step in which an adhesive thin film formed by laminating an adhesive material on a base material is pressed from the adhesive material side, and the transfer metal film in the vicinity of the transfer pattern portion; A transfer metal pattern terminal transfer stage provided by transferring a transfer metal pattern terminal obtained by adhesive peeling of the transfer metal film to a predetermined portion of the adhesive material by peeling away from the top and separating the transfer metal pattern terminal. Method of transferring to the pressure-sensitive thin film that. 4. The method for transferring to an adhesive thin film according to claim 3 , wherein, in the transfer metal film forming step, the transfer metal film is protruded from the peripheral area of the top of the convex part in the vicinity of the peripheral part of the top of the convex part. A method for transferring to an adhesive thin film, characterized in that is formed.

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