JP4027449B2 - 半導体薄膜及び半導体装置の作製方法 - Google Patents

半導体薄膜及び半導体装置の作製方法 Download PDF

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Publication number
JP4027449B2
JP4027449B2 JP33634196A JP33634196A JP4027449B2 JP 4027449 B2 JP4027449 B2 JP 4027449B2 JP 33634196 A JP33634196 A JP 33634196A JP 33634196 A JP33634196 A JP 33634196A JP 4027449 B2 JP4027449 B2 JP 4027449B2
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film
oxide film
silicon
heat treatment
region
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Expired - Fee Related
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JP33634196A
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Japanese (ja)
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JPH09289168A (ja
JPH09289168A5 (cg-RX-API-DMAC10.html
Inventor
舜平 山崎
潤 小山
昭治 宮永
健司 福永
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP33634196A priority Critical patent/JP4027449B2/ja
Publication of JPH09289168A publication Critical patent/JPH09289168A/ja
Publication of JPH09289168A5 publication Critical patent/JPH09289168A5/ja
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  • Thin Film Transistor (AREA)
JP33634196A 1996-02-23 1996-12-02 半導体薄膜及び半導体装置の作製方法 Expired - Fee Related JP4027449B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33634196A JP4027449B2 (ja) 1996-02-23 1996-12-02 半導体薄膜及び半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP8-61897 1996-02-23
JP8-61898 1996-02-23
JP6189796 1996-02-23
JP6189896 1996-02-23
JP33634196A JP4027449B2 (ja) 1996-02-23 1996-12-02 半導体薄膜及び半導体装置の作製方法

Publications (3)

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JPH09289168A JPH09289168A (ja) 1997-11-04
JPH09289168A5 JPH09289168A5 (cg-RX-API-DMAC10.html) 2004-11-18
JP4027449B2 true JP4027449B2 (ja) 2007-12-26

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5063640B2 (ja) * 2009-04-27 2012-10-31 株式会社半導体エネルギー研究所 半導体装置
JP5770068B2 (ja) * 2010-11-12 2015-08-26 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02143417A (ja) * 1988-11-24 1990-06-01 Sharp Corp 半導体装置の製造方法
JPH06132218A (ja) * 1992-10-15 1994-05-13 Sony Corp 半導体結晶の成長方法及びｍｏｓ型トランジスタの作製方法
JP2649325B2 (ja) * 1993-07-30 1997-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3041177B2 (ja) * 1993-12-27 2000-05-15 シャープ株式会社 半導体装置の製造方法
JP3229750B2 (ja) * 1994-02-22 2001-11-19 三洋電機株式会社 多結晶半導体膜、それを用いた半導体装置及び太陽電池
JP3216861B2 (ja) * 1995-04-10 2001-10-09 シャープ株式会社 多結晶シリコン膜の形成方法および薄膜トランジスタの製造方法
JP3476320B2 (ja) * 1996-02-23 2003-12-10 株式会社半導体エネルギー研究所 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法

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JPH09289168A (ja) 1997-11-04

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