JP4021721B2 - Liquid supply structure - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a liquid supply structure for directly injecting and supplying a liquid in order to evaporate the liquid and supply it as a process gas for film formation in a semiconductor manufacturing system using a CVD (chemical vapor deposition) method or the like. In particular, the present invention relates to a liquid supply structure including a flow control valve for supplying and purging liquid.
[0002]
[Prior art]
Conventionally, when a film is formed using a CVD apparatus or the like, a liquid for film formation such as TDMAT (tetrakis (dimethylamino) titanium) is used as an organic metal precursor. As shown in FIGS. 7 and 8, the liquid supply structure (system) for supplying the process gas liquid includes an ampoule (container) 3 in which a gas introduction pipe 1, a discharge pipe 2, and both pipes 1 and 2 are connected. , A bypass pipe 4 for connecting the gas introduction pipe 1 and the discharge pipe 2, valves 5 a, 5 b, 5 c, 5 d, 5 e, 5 f for controlling the flow by opening and closing the passage, a connector 6, etc. The discharge pipe 2 can be separated into a semiconductor manufacturing system side and a container side by a connector 6.
[0003]
In the film forming process, when the liquid is ejected, only the valve 5f is closed, and a gas such as He is sent into the ampoule 3 from the gas introduction pipe 1 as shown by the black arrow in FIG. The liquid (TDMAT) is pressurized, sprayed from a spray nozzle provided on the downstream side thereof through the discharge pipe 2, heated and vaporized, and supplied together with a carrier gas into a film forming chamber of the CVD apparatus.
On the other hand, since the liquid adheres as a solid to the inner wall of the discharge pipe 2 as it is supplied, it is necessary to periodically perform a purge process to remove the adhering matter in order to ensure stable supply characteristics. In the case of this purge process, the valves 5b and 5c are closed, and the N from the upstream side of the gas introduction pipe 1 and the downstream side of the discharge pipe 2 as shown by the white arrows in FIG.₂Purge gas such as
[0004]
[Problems to be solved by the invention]
By the way, in the above liquid supply structure, since the valves 5a to 5f are connected to the pipes 1 and 2 so as to be stacked in the vertical direction, the discharge passage 2a, the bypass passage 4a and the like become relatively long and attached. The passage (space) for generating the kimono becomes longer. Therefore, the time required for the purge process becomes long, and during this time, the film forming process cannot be performed, and the productivity is lowered.
In particular, since the above-described purge process cannot be performed on the discharge passage 2b on the upstream side of the valve 5d, after the container side (ampoule 3, valves 5b, 5c) is removed at the connector 6, the ampoule 3 and the connector 6 It is necessary to clean the discharge passage 2b and the like on the upstream side, and to perform a cleaning operation separately from the above-described cleaning on the discharge passage 2b on the downstream side of the connector 6.
In addition, since the valves 5a to 5f are stacked in the vertical direction, the height of the structure is high and handling is inconvenient, and a relatively large space is required to incorporate this structure into a semiconductor manufacturing system. And
[0005]
The present invention has been made in view of the above-described problems of the prior art. The object of the present invention is to reduce the size, simplify the structure, shorten the passage, and perform the purge process with reliability. An object of the present invention is to provide a liquid supply structure capable of shortening the time required for processing and improving productivity.
[0006]
[Means for Solving the Problems]
  The liquid supply structure of the present invention includes a gas introduction passage that guides a predetermined gas to a sealed container in which a liquid is stored, a discharge passage that discharges the liquid in the container, and a bypass that communicates the gas introduction passage and the discharge passage. A liquid supply structure including a passage and a plurality of valves for opening and closing the passage, and having a manifold block that integrally defines the gas introduction passage, the discharge passage, and the bypass passage, and the plurality of valves includes a manifold The first valve and the second valve which are surface-mounted by fastening with respect to the block and arranged in the gas introduction passage on the upstream side and the downstream side of the connection portion of the bypass passage, and discharge in the region of the connection portion of the bypass passage A third valve disposed in the passage and a fourth valve disposed in the middle of the bypass passageThe manifold block is formed in a substantially rectangular parallelepiped shape and coupled to the container, the first valve and the second valve are arranged so as to be substantially opposed to each other, and the third valve and the fourth valve are substantially opposed to each other. Is located inIt is characterized by that.
[0007]
  According to this configuration, for example, when the film forming process is performed using the film forming liquid, the gas is introduced from the gas introduction passage into the sealed container with only the fourth valve closed, and the liquid is added. When pressurized, the liquid is discharged through the discharge passage and supplied toward the film forming chamber. On the other hand, in the purge process, when purge gas is introduced from the gas introduction passage with the second valve and the third valve closed, the purge valve is discharged from the bypass passage through the fourth valve to the third valve. When ejected from the passage or introduced from the discharge passage, it comes into contact with the third valve, and ejects from the gas introduction passage through the fourth valve and the bypass passage.
  In particular, by adopting a manifold block that defines a passage and using a surface-mounted valve, the discharge passage, the bypass passage, and the like can be shortened, and the time required for the purge process can be shortened. Further, since the valve is surface-mounted by fastening, the structure itself can be simplified and downsized, and cleaning by disassembly, parts replacement, etc. are facilitated.
  In addition, the manifold block is formed in a substantially rectangular parallelepiped and coupled to the container, the first valve and the second valve are arranged so as to face each other, and the third valve and the fourth valve are arranged so as to face each other. Therefore, the height of the structure is lower and the overall size can be reduced as compared with the case where the valves are stacked in the vertical direction. Further, the passage between the third valve and the fourth valve is shortened, the space where the liquid adheres, that is, the dead volume is reduced, and the purge process is shortened.
[0009]
In the above configuration, the valve has a diaphragm that opens and closes the passage, a central passage that is directly opened and closed by the diaphragm, and a peripheral passage that is positioned on the peripheral side of the diaphragm, and the central passage of the third valve is downstream of the discharge passage. It is possible to adopt a configuration in which the central passage of the fourth valve is in communication with the connection side with the discharge passage.
According to this configuration, since the dead volume communicating with the discharge passage is reduced, the wall surface itself to which the liquid adheres can be reduced as much as possible.
[0010]
The said structure WHEREIN: The structure formed so that the bypass channel | path which connects the center channel | path and discharge channel of a 4th valve could go to the center channel | path of a 3rd valve | bulb can be employ | adopted.
According to this configuration, when the purge process is performed, the purge gas guided from the bypass passage through the fourth valve to the discharge passage flows toward the central passage of the third valve and then travels toward the discharge passage. Therefore, it is surely guided to the region of the third valve, and the purge process is more reliably performed.
[0011]
In the above configuration, the manifold block may have a heat transfer member that transfers heat from the heat source.
According to this configuration, since the heat of the heat source is transmitted to the manifold block via the heat transfer member, the purge process is performed more efficiently.
[0012]
In the above configuration, the second valve and the third valve are manually operated valves, and the first valve and the fourth valve are pneumatic valves driven by air pressure. .
According to this configuration, when the structure is attached to or removed from the semiconductor manufacturing system, the second valve and the third valve can be manually opened and closed, so that the attaching / detaching operation can be easily performed.
[0013]
The said structure WHEREIN: The structure which has a 5th valve | bulb connected downstream from the 3rd valve | bulb can be employ | adopted for a discharge passage.
According to this configuration, by using the fifth valve for the flow control of the purge process, this structure can be applied to an existing facility including a valve for the purge process.
[0014]
In the above configuration, the fifth valve may be configured to be connected to the manifold block by welding.
According to this structure, compared with the case where a 5th valve is connected using a coupling member etc., a channel | path can be shortened. Therefore, the dead volume is reduced and the wall surface itself to which the liquid can adhere can be reduced.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
FIG. 1 to FIG. 5 show an embodiment of a (structure) having a liquid supply structure according to the present invention. FIG. 1 is a schematic diagram of a semiconductor manufacturing system to which this structure is applied, and FIG. FIG. 3 is a perspective view of the manifold block, FIG. 4 is a sectional view of the manifold block, and FIG. 5 is a sectional view of the valve.
[0016]
As shown in FIG. 1, the structure 10 is incorporated as a part of a system for manufacturing a semiconductor by a CVD method. In this system, a heater A as a heat source including valves A1, A2 and A3 for purging disposed adjacent to the structure 10, a flow controller B and a flow controller B disposed downstream of the valve A2. A mixing chamber C which is provided with an injection nozzle for injecting a liquid controlled by the above-described method and which is heated to vaporize the injection liquid to about 80 degrees to be mixed with a carrier gas, a film formation chamber D disposed on the downstream side of the mixing chamber C, and the like. I have.
[0017]
As shown in FIG. 2, the structure 10 is formed by fastening a sealed container (ampoule) 20 filled with TDMAT as a liquid serving as a base of a process gas when forming a TiN film, and a lid 21 of the container 20 by fastening. The joined manifold block 30, the first valve 40, the second valve 50, the third valve 60, the fourth valve 70, and the fifth valve joined by welding to the manifold block 30 by surface mounting. The heat transfer member 90 etc. which were couple | bonded with the valve | bulb 80 and the manifold block 30 by the fastening are provided.
[0018]
A handle 22 is integrally formed on the lid 21. Therefore, when carrying this device, it can be easily carried by grasping 22 instead of the valves 40 to 80 and the like, and the breakage and deformation of the valves 40 to 80 can be prevented.
[0019]
As shown in FIG. 3, the manifold block 30 is manufactured by machining a stainless material so as to be a substantially rectangular parallelepiped having a flange portion 31 at the lower end and pipe portions 32 and 33 at the upper end.
A gas introduction passage 34 is formed below the pipe portion 32. A discharge passage 35 is formed in the pipe portion 33 and below the pipe portion 33. A bypass passage 36 extending in the horizontal direction is formed in the intermediate region so that the gas introduction passage 34 and the discharge passage 35 communicate with each other.
[0020]
As shown in FIGS. 3 and 4, the gas introduction passage 34 includes a straight passage 34a extending vertically in the upper region, inclined passages 34b and 34c having openings 34b 'and 34c' on one side 30a, and an opening 34d '. , 34e 'on the other side surface 30b, and inclined passages 34d, 34e, and a straight passage 34f extending vertically in the lower region. During film formation, a gas such as He flows from the upstream linear passage 34a toward the downstream linear passage 34f.
[0021]
As shown in FIGS. 3 and 4, the discharge passage 35 includes a straight passage 35a extending in the vertical direction in the lower region, inclined passages 35b and 35c having openings 35b 'and 35c' on the other side 30b, and a vertical passage in the upper region. It is formed by a straight passage 35d extending in the direction. During film formation, the pressurized TDMAT liquid flows out from the upstream linear passage 35a toward the downstream linear passage 35d.
[0022]
As shown in FIGS. 3 and 4, the bypass passage 36 is formed by a straight passage 36a extending in the horizontal direction, and inclined passages 36b and 36c having openings 36b 'and 36c' on one side surface 30a. Here, the point P1 of the straight passage 36a corresponds to the connecting portion with the gas introduction passage 34, and the point P2 located at the upper end of the inclined passage 36c corresponds to the connecting portion with the discharge passage 35. In the purge process, the purge gas is guided from the gas introduction passage 34 to the discharge passage 35 through the bypass passage 36, for example.
Further, the bypass passage 36 is opened from the end face on the gas introduction passage 34 side by machining and is drilled to the vicinity of the discharge passage 35, and then plugged into the opening on the end face to close it. If the bypass passage 36 is opened from the end surface on the discharge passage 35 side, a portion that cannot be purged (dead volume) remains, so it is preferable to open the bypass passage 36 from the gas introduction passage 34 side.
[0023]
Thus, by adopting the manifold block 30 that integrally defines the gas introduction passage 34, the discharge passage 35, and the bypass passage 36, the passage length can be shortened as compared with the case where the pipes are connected with each other as in the prior art. , The space in which TDMAT flows can be reduced. Further, since the manifold block 30 can be manufactured by machining, the manufacturing cost is reduced.
Further, since the portion corresponding to the conventional discharge passage 2b corresponds to the straight passage 35a and the inclined passage 35b in the manifold block 30, when the container 20 is replaced, the semiconductor manufacturing system side and the container side are purged. A portion that cannot be processed does not remain on the semiconductor manufacturing system side, and a separate cleaning operation as in the prior art becomes unnecessary, and the maintenance can be simplified.
[0024]
As shown in FIG. 5, the first valve 40 to the fourth valve 70 are positioned on the peripheral side of the diaphragm 102, the diaphragm 102 that is reciprocated by the piston 101 to open and close the passage, the central passage 103 that is directly opened and closed by the diaphragm 102, and the diaphragm 102. This is a surface mount type valve formed by the peripheral passage 104 or the like. When the diaphragm 102 is closed, the volume of the central passage 103 is smaller than the volume of the peripheral passage 104, that is, the dead volume is small.
The first valve 40 and the fourth valve 70 are pneumatic valves in which the piston 101 is driven by air pressure. The second valve 50 and the third valve 60 are manually operated valves in which the piston 101 is driven manually.
By using the second valve 50 and the third valve 60 as manual valves, the structure 10 can be easily detached from the system while the liquid in the container 20 is sealed.
[0025]
As shown in FIG. 4A, the first valve 40 is surface-mounted by being fastened to the one side surface 30a of the manifold block 30 with screws or the like. The central passage 103 communicates with the inclined passage 34c, and the peripheral passage 104 communicates with the inclined passage 34b.
That is, the first valve 40 is disposed on the upstream side of the connecting portion P <b> 1 of the bypass passage 36 with respect to the gas introduction passage 34. Further, since the central passage 103 is disposed closer to the bypass passage 36, the passage communicating with the discharge passage 35 and the bypass passage 36 is shortened.
[0026]
As shown in FIG. 4A, the second valve 50 is fastened to the other side surface 30b of the manifold block 30 by screws or the like so as to be substantially opposed to the first valve 40. The central passage 103 communicates with the inclined passage 34d, and the peripheral passage 104 communicates with the inclined passage 34e.
That is, the second valve 50 is disposed on the downstream side of the connecting portion P <b> 1 of the bypass passage 36 with respect to the gas introduction passage 34. Further, since the central passage 103 is disposed closer to the bypass passage 36, the passage communicating with the discharge passage 35 and the bypass passage 36 is shortened.
[0027]
As shown in FIG. 4B, the third valve 60 is surface-mounted by being fastened to the other side surface 30b of the manifold block 30 with screws or the like. The central passage 103 communicates with the inclined passage 35c, and the peripheral passage 104 communicates with the inclined passage 35b.
That is, the third valve 60 is disposed in the region of the connecting portion P <b> 2 of the bypass passage 36 with respect to the discharge passage 35. Further, the central passage 103 is disposed at a position communicating with the bypass passage 36 (inclined passage 36 c) on the downstream side of the discharge passage 35.
[0028]
Here, the inclined passage 35c (discharge passage 35) is inclined at an angle θ toward the central passage 103 of the third valve 60, and the inclined passage 36c (bypass passage 36) is also inclined at an angle θ. It is formed so as to go to the central passage 103 of the valve 60. Therefore, for example, when the purge gas is guided from the third valve 60 to the discharge passage 35 through the bypass passage 36, the purge passage traces the inclined passage 36c → the central passage 103 of the third valve 60 → the inclined passage 35c → the straight passage 35d. The purge process can be performed reliably and smoothly.
Further, since the central passage 103 of the third valve 60 is disposed on the downstream side of the discharge passage 35, the passage through which the purge gas passes is shortened, and the purge process is shortened.
[0029]
As shown in FIG. 4B, the fourth valve 70 is surface-mounted by being fastened with screws or the like so as to substantially face the third valve 60 on one side surface 30 a of the manifold block 30. The central passage 103 communicates with the inclined passage 36c, and the peripheral passage 104 communicates with the inclined passage 36b.
That is, the fourth valve 70 is disposed in the middle of the bypass passage 36 and between the inclined passage 36b and the inclined passage 36c. Further, the central passage 103 of the fourth valve 70 communicates with the connection side with the discharge passage 35 (inclined passage 35c).
Accordingly, when the fourth valve 70 is closed and TDMAT flows through the discharge passage 35, the dead volume communicating with the discharge passage 35 is reduced, so that the passage to which TDMAT can adhere can be shortened (space is reduced). it can.
[0030]
As described above, the first valve 40 and the second valve 50 are arranged so as to be substantially opposed to each other in the horizontal direction, and the third valve 60 and the fourth valve 70 are substantially opposed to each other in the horizontal direction. Are arranged as follows. Therefore, the height of the structure is reduced and the entire structure can be reduced in size as compared with the conventional case where they are stacked in the vertical direction. Further, since the passage between the third valve 60 and the fourth valve 70 can be shortened, the space (dead volume) to which TDMAT adheres is reduced, and the purge process is shortened.
[0031]
The fifth valve 80 is a type of valve connected by a pipe joint, and is coupled to the pipe portion 33 of the manifold block 30 by welding as shown in FIGS. 1 and 2. The fifth valve 80 is used to control the flow in cooperation with the valves A1, A2, and A3 when performing the purge process.
That is, by incorporating the fifth valve 80 integrally as a part of the structure 10, the structure 10 can be applied to existing equipment including the valves A1, A2, A3, and the like. In addition, since the fifth valve 80 is connected by welding, the passage can be shortened compared to the case where a joint member such as a pipe is used, and the space in which TDMAT can adhere can be reduced.
[0032]
As shown in FIGS. 2 and 3, the heat transfer member 90 has a flat surface 91 on the upper side and an inclined surface in contact with the upper surface 30 c of the manifold block 30 on the lower side. The heat transfer member 90 is fastened by screws or the like so as to come into surface contact with the upper surface 30c and the other side surface 30b of the manifold block 30. As shown in FIG. 1, the heater A is disposed in contact with the flat surface 91 of the heat transfer member 91.
[0033]
That is, the heat of the heater A is transmitted to the manifold block 30 so that the purge process of the discharge passage 35, the bypass passage 36, etc. is performed efficiently.
Particularly, since the upper surface 30c is formed as an inclined surface and the heat transfer member 90 is interposed in a wedge shape between the manifold block 30 and the heater A, the horizontal direction (wedge action of the heat transfer member 90 is reduced. By appropriately adjusting the position of the generated direction) with a screw or the like, the heater A and the manifold block 30 can be reliably brought into close contact with the heat transfer member 90, heat transfer is performed more efficiently, and the purge is performed. Processing can be shortened.
[0034]
Next, liquid supply and purge processing using the structure 10 will be described with reference to FIG.
First, when the film forming process is performed, the fourth valve 70 is closed and the bypass passage 36 is shut off. Then, as shown by the black arrow in FIG. 1, a gas such as He is introduced into the container 20 from the gas introduction passage 34. Then, the liquid of TDMAT is pressurized and flows out from the discharge passage 35, the flow rate is appropriately controlled by the flow rate controller B, and is jetted into the mixing chamber C by the jet nozzle. Then, it is mixed with the carrier gas, heated to about 80 degrees, and supplied toward the film forming chamber D.
[0035]
Next, when performing the purge process, the second valve 50 and the third valve 60 are closed to completely shut off the TDMAT in the container 20, and the fourth valve 70 is opened to open the bypass passage 36. Then, the valves A1, A2 and A3 of the heater A are opened.
[0036]
As shown by the white arrow in FIG.₂Or the like is introduced from the gas introduction passage 34 and the valve A1 of the heater A. The purge gas introduced from the gas introduction passage 34 flows through the straight passage 34a → the inclined passage 34b → the first valve 40 to the bypass passage 36 (the straight passage 36a → the inclined passage 36b).
[0037]
Then, after passing through the fourth valve 70, it flows directly from the bypass passage 36 (inclined passage 36 c) toward the central passage 103 of the third valve 60 without stagnation. Thereafter, the purge gas flows through the discharge passage 35 (the inclined passage 35c → the straight passage 35d), and flows out through the fifth valve 90 to the valve A3.
Here, in the region of the third valve 60, the inclined passage 36c is formed so as to directly face the central passage 103 and then communicate with the inclined passage 35c. Processing is performed reliably and smoothly.
[0038]
On the other hand, the purge gas introduced from the valve A1 side flows along the path of the valve A2 → the fifth valve 80 → the valve A3. With this flow, the purge process of the fifth valve 80 is performed.
The purge gas that has passed through the valve A3 is sucked into a pump provided in the exhaust passage of the CVD film formation chamber D, and is heat-treated in a heat treatment section on the downstream side.
[0039]
During the purge process, the heat of the heater A is transmitted to the manifold block 30 via the heat transfer member 90, so that the discharge passage 35, the bypass passage 36, the gas introduction passage 34, and the like are heated, Deposits attached to the wall surface are efficiently removed, and the purge process is shortened.
In addition, since each structure 10 is couple | bonded by fastening using a screw | thread etc., it can be decomposed | disassembled for each component easily. Therefore, cleaning can be performed for each part, and defective parts can be easily replaced.
[0040]
FIG. 6 shows another embodiment, in which a frame 120 is provided to the structure 10 according to the above-described embodiment. According to this structure 10 ′, when the structure 10 ′ is attached to and detached from the system, the frame 120 can be grasped to facilitate the work, and when the structure 10 ′ is dropped, the valve 40˜ 80 etc. can be protected from impact.
[0041]
In the above embodiment, the structure 10 is applied to a semiconductor manufacturing system using the CVD method, and TDMAT is used as a film forming liquid to be a process gas. However, in other semiconductor manufacturing systems, the process gas is also used. The structure of the present invention may be applied to a system in which other liquid is applied as the film forming liquid.
[0042]
In the above embodiment, the case where the fifth valve 80 is integrally provided to be applied to existing equipment such as the heater A has been described. However, the present invention is not limited to this, and the fifth valve 80 is removed. In the purge process, a purge gas is introduced from the discharge passage 35 side and flowed through the bypass passage 36 → the gas introduction passage 34, or the surface-mounted first valve 40 to the fourth valve 70 alone. Alternatively, a method may be employed in which purge gas is introduced from the gas introduction passage 34 side and flows through the bypass passage 36 → discharge passage 35.
[0043]
【The invention's effect】
As described above, according to the liquid supply structure of the present invention, the gas introduction passage that guides the gas to the container, the discharge passage that discharges the liquid in the container, and the bypass passage that communicates the gas introduction passage and the discharge passage. By adopting a manifold block that integrally defines the valve and surface mounting the first valve to the fourth valve that open and close the passage to the manifold block by fastening, the discharge passage, bypass passage, etc. can be shortened The time required for the purge process can be shortened. Further, by surface mounting the first valve to the fourth valve by fastening, the structure of the structure can be simplified and miniaturized, and cleaning by disassembly, parts replacement, and the like are facilitated.
In particular, since the first valve, the second valve, and the third valve and the fourth valve are arranged so as to be substantially opposed to each other, the height of the structure is higher than when the valves are stacked in the vertical direction. And the entire structure can be downsized. Further, the passage between the third valve and the fourth valve is shortened, the space where the liquid adheres, that is, the dead volume is reduced, and the purge process is shortened.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram showing a semiconductor manufacturing system to which a liquid supply structure according to the present invention is applied.
FIG. 2 is a perspective view showing an embodiment of a liquid supply structure according to the present invention.
FIGS. 3A and 3B are perspective views showing a manifold block constituting a part of the structure according to the present invention. FIGS.
4A is a cross-sectional view of the manifold block at E1-E1 in FIG. 3, and FIG. 4B is a cross-sectional view of the manifold block at E2-E2 in FIG.
FIG. 5 is a sectional view of a first valve to a fourth valve.
FIG. 6 is a perspective view showing another embodiment of the liquid supply structure according to the present invention.
FIG. 7 is a perspective view showing a conventional liquid supply structure.
FIG. 8 is a cross-sectional view of a conventional liquid supply structure.
[Explanation of symbols]
A Heater (heat source)
A1, A2, A3 valve
B Flow controller
C Mixing chamber
D Deposition chamber
10, 10 'liquid supply structure
20 containers
21 Lid
22 Handle
30 Manifold block
30a One side
30b Other side
30c top surface
31 Flange
32, 33 Pipe section
34 Gas introduction passage
34a, 34f Straight passage
34b, 34c, 34d, 34e Inclined passage
35 Discharge passage
35a, 35d Straight passage
35b, 35c Inclined passage
36 Bypass passage
36a Straight passage
36b, 36c Inclined passage
37 plug
P1, P2 connecting part
40 First valve (pneumatic valve)
50 Second valve (manual valve)
60 3rd valve (manual valve)
70 4th valve (pneumatic valve)
80 5th valve
90 Heat transfer member
102 Diaphragm
103 Central passage
104 Peripheral passage
120 frames

Claims (7)

A gas introduction passage for guiding a predetermined gas to a sealed container containing a liquid, a discharge passage for discharging the liquid in the container, a bypass passage communicating the gas introduction passage and the discharge passage, and the passage A liquid supply structure comprising a plurality of valves for opening and closing,
A manifold block that integrally defines the gas introduction passage, the discharge passage, and the bypass passage;
The plurality of valves are surface-mounted by fastening to the manifold block, and the first valve and the second valve disposed in the gas introduction passage on the upstream side and the downstream side of the connection portion of the bypass passage, a third valve disposed in the discharge passage in the region of the connection portion of the bypass passage, a fourth valve disposed in the middle of the bypass passage,
The manifold block is formed in a substantially rectangular parallelepiped and coupled to the container,
The first valve and the second valve are disposed so as to face each other substantially,
The third valve and the fourth valve are disposed so as to be substantially opposed to each other .
A liquid supply structure characterized by that. The valve has a diaphragm that opens and closes a passage, a central passage that is directly opened and closed by the diaphragm, and a peripheral passage that is located on the peripheral side of the diaphragm,
A central passage of the third valve communicates with a downstream side of the discharge passage;
A central passage of the fourth valve is in communication with a connection side with the discharge passage;
The liquid supply structure according to claim 1 . The bypass passage communicating the central passage of the fourth valve and the discharge passage is formed to face the central passage of the third valve,
The liquid supply structure according to claim 2 . The manifold block includes a heat transfer member that transfers heat from a heat source.
Liquid supply structure according to 3 any one claims 1, characterized in that. The second valve and the third valve are manually operated valves, and the first valve and the fourth valve are pneumatic valves driven by air pressure.
Liquid supply structure according to 4 or claims 1, characterized in that. The discharge passage has a fifth valve connected downstream of the third valve.
Liquid supply structure according to 5 any one claims 1, characterized in that. The fifth valve is connected to the manifold block by welding.
The liquid supply structure according to claim 6 .

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