JP4016995B2 - 回路接続材料並びに回路端子の接続構造及び接続方法 - Google Patents
回路接続材料並びに回路端子の接続構造及び接続方法 Download PDFInfo
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- JP4016995B2 JP4016995B2 JP2005116157A JP2005116157A JP4016995B2 JP 4016995 B2 JP4016995 B2 JP 4016995B2 JP 2005116157 A JP2005116157 A JP 2005116157A JP 2005116157 A JP2005116157 A JP 2005116157A JP 4016995 B2 JP4016995 B2 JP 4016995B2
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- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- OPQYOFWUFGEMRZ-UHFFFAOYSA-N tert-butyl 2,2-dimethylpropaneperoxoate Chemical compound CC(C)(C)OOC(=O)C(C)(C)C OPQYOFWUFGEMRZ-UHFFFAOYSA-N 0.000 description 1
- SWAXTRYEYUTSAP-UHFFFAOYSA-N tert-butyl ethaneperoxoate Chemical compound CC(=O)OOC(C)(C)C SWAXTRYEYUTSAP-UHFFFAOYSA-N 0.000 description 1
- XTXFUQOLBKQKJU-UHFFFAOYSA-N tert-butylperoxy(trimethyl)silane Chemical compound CC(C)(C)OO[Si](C)(C)C XTXFUQOLBKQKJU-UHFFFAOYSA-N 0.000 description 1
- WPZJSWWEEJJSIZ-UHFFFAOYSA-N tetrabromobisphenol-F Natural products C1=C(Br)C(O)=C(Br)C=C1CC1=CC(Br)=C(O)C(Br)=C1 WPZJSWWEEJJSIZ-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H01L2924/01—Chemical elements
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Description
(1)加熱により遊離ラジカルを発生する硬化剤
(2)分子量10000以上の水酸基含有樹脂
(3)ラジカル重合性物質
(4)導電性粒子、
2層構成であり、
前記2層構成が、前記硬化剤と前記導電性粒子とを分離するように、前記硬化剤を含有する層と前記導電性粒子を含有する層とからなる構成である回路接続材料2層構成であり、
上記2層構成が、前記硬化剤を含有する層と前記導電性粒子を含有する層とからなる構成である回路接続材料である。
ジアシルパーオキサイドとしては、イソブチルパーオキサイド、2,4−ジクロロベンゾイルパーオキサイド、3,5,5−トリメチルヘキサノイルパーオキサイド、オクタノイルパーオキサイド、ラウロイルパーオキサイド、ステアロイルパーオキサイド、スクシニックパーオキサイド、ベンゾイルパーオキシトルエン、ベンゾイルパーオキサイド等が使用できる。
アクリレート(メタクリレート)の具体例としては、メチルアクリレート、エチルアクリレート、イソプロピルアクリレート、イソブチルアクリレート、エチレングリコールジアクリレート、ジエチレングリコールジアクリレート、トリメチロールプロパントリアクリレート、テトラメチロールメタンテトラアクリレート、2−ヒドロキシ−1,3−ジアクリロキシプロパン、2,2−ビス〔4−(アクリロキシメトキシ)フェニル〕プロパン、2,2−ビス〔4−(アクリロキシポリエトキシ)フェニル〕プロパン、ジシクロペンテニルアクリレート、トリシクロデカニルアクリレート、トリス(アクリロイロキシエチル)イソシアヌレート等がある。これらは単独又は併用して用いることができ、必要によっては、ハイドロキノン、メチルエーテルハイドロキノン類などの重合禁止剤を適宜用いてもよい。また、ジシクロペンテニル基及び/又はトリシクロデカニル基及び/又はトリアジン環を有する場合は、耐熱性が向上するので好ましい。
(ただしnは1〜3の整数である)
(1)加熱により遊離ラジカルを発生する硬化剤
(2)分子量10000以上の水酸基含有樹脂
(3)ラジカル重合性物質
加熱により遊離ラジカルを発生する硬化剤として、半減期10時間の温度が40℃以上かつ、半減期1分の温度が180℃以下である硬化剤が好ましく、パーオキシエステルが使用できる。
分子量10000以上の水酸基含有樹脂としてはフェノキシ樹脂、特にカルボキシル基含有のエラストマーで変性されたフェノキシ樹脂、エポキシ基含有のエラストマーで変性されたフェノキシ樹脂が好ましい。
(6)ラジカル重合性物質
加熱により遊離ラジカルを発生する硬化剤はパーオキシエステルが好ましい。
フェノキシ樹脂(ユニオンカーバイド株式会社製、商品名PKHC、平均分子量45,000)50gを、重量比でトルエン(沸点110.6℃、SP値8.90)/酢酸エチル(沸点77.1℃、SP値9.10)=50/50の混合溶剤に溶解して、固形分40%の溶液とした。
ラジカル重合性物質としてトリヒドロキシエチルグリコールジメタクリレート、リン酸エステル型アクリレート(共栄社油脂株式会社製、商品名P2m)を用いて、フェノキシ樹脂/トリヒドロキシエチルグリコールジメタクリレート、リン酸エステル型アクリレートの固形重量比を50g/49g/1g(実施例2)、30g/69g/1g(実施例3)、70g/29g/1g(実施例4)としたほかは、実施例1と同様にして回路接続材料を得た。この回路接続材料を用いて、実施例1と同様にして回路を接続した。
硬化剤の配合量を2gとしたほかは、実施例2と同様にして回路接続材料を得た。
硬化剤をt−ブチルパーオキシ2−エチルヘキサノネート(日本油脂株式会社製、商品名パーブチルO)としたほかは、実施例1と同様にして回路接続材料を得た。
平均分子量45,000のフェノキシ樹脂(PKHC)100gに末端カルボキシル基含有ブタジエン−アクリロニトリル共重合体(Hycar CTBNX1009−SP、宇部興産(株)製)25gを一般的方法で反応させて、カルボキシル基含有ブタジエン−アクリロニトリル共重合体で変性したフェノキシ樹脂を作製した。このフェノキシ樹脂を用い、フェノキシ樹脂/トリヒドロキシエチルグリコールジメタクリレート、リン酸エステル型アクリレートの固形重量比を60g/39g/1gとしたほかは実施例1と同様にして回路接続材料を得た。
平均分子量45,000のフェノキシ樹脂(PKHC)100gにエポキシ基含有アクリル共重合体25gで変性したフェノキシ樹脂を作製した。このフェノキシ樹脂を用い、フェノキシ樹脂/トリヒドロキシエチルグリコールジメタクリレート、リン酸エステル型アクリレートの固形重量比を60g/39g/1gとしたほかは実施例1と同様にして回路接続材料を得た。
エポキシ基含有アクリル共重合体(アクリルゴム)を用いフェノキシ樹脂/アクリルゴム/トリヒドロキシエチルグリコールジメタクリレート、リン酸エステル型アクリレートの固形重量比を40g/20g/39g/1gとしたほかは実施例1と同様にして回路接続材料を得た。
平均分子量45,000のフェノキシ樹脂(PKHC)100gに末端にアクリル基を持つモノイソシアネート5gを一般的方法で反応させて、アクリル基で変性したフェノキシ樹脂を作製した。このフェノキシ樹脂を用い、フェノキシ樹脂/トリヒドロキシエチルグリコールジメタクリレート、リン酸エステル型アクリレートの固形重量比を60g/39g/1gとしたほかは実施例1と同様にして回路接続材料を得た。
導電性粒子を平均粒径2μmのNi粒子の表面をAuで被覆(被覆厚み0.08μm)したものを用いて、0.5体積部としたほかは、実施例1と同様にして回路接続材料を得た。
導電性粒子の粒径を5μmとしたほかは、実施例1と同様にして回路接続材料を得た。
ラジカル重合性物質として2,2−ビス{4−(アクリロキシ・ジエトキシ)フェニル}プロパン(新中村化学(株)製、商品名 A−BPE−4)を用い、フェノキシ樹脂/2,2−ビス{4−(アクリロキシ・ジエトキシ)フェニル}プロパン、リン酸エステル型アクリレートの固形重量比を60g/39g/1g他は実施例1と同様にして回路接続材料を得た。
ラジカル重合性物質としてジシクロペンテニルアクリレート(共栄社油脂株式会社製、商品名DCP−A)を用い、フェノキシ樹脂/ジシクロペンテニルアクリレート、リン酸エステル型アクリレートの固形重量比を60g/39g/1gとしたほかは、実施例1と同様にして回路接続材料を得た。
ラジカル重合性物質としてトリス(アクリロイロキシエチル)イソシアヌレートを用い、フェノキシ樹脂/トリス(アクリロイロキシエチル)イソシアヌレート、リン酸エステル型アクリレートの固形重量比を60g/39g/1gとしたほかは、実施例1と同様にして回路接続材料を得た。
ラジカル重合性物質として4,4’−ビスマレイミドジフェニルメタン30gとジアリルビスフェノールA35gを120℃で20分間加熱混合したものとリン酸エステル型アクリレート(共栄社油脂株式会社製、商品名P−2m)を用いた。
ラジカル重合性物質として4,4’−ビスマレイミドジフェニルメタン30gとジアリルビスフェノールA20gを120℃で20分間加熱混合したものを用いたほかは、実施例14と同様にして回路接続材料を得た。
導電性粒子を平均粒径2μmのNi粒子の表面をPdで被覆(被覆厚み0.04μm)したものを用いて、0.5体積%としたほかは、実施例1と同様にして回路接続材料を得た。
フェノキシ樹脂(PKHC)、ビスフェノールA型エポキシ樹脂(YL980、油化シェル株式会社製品名)、イミダゾール系マイクロカプセル型硬化剤(3941HP 株式会社旭化成製商品名)を用いて、フェノキシ樹脂/ビスフェノールA型エポキシ樹脂/イミダゾール系マイクロカプセル型硬化剤の固形重量比を40/20/40とした他は、実施例1と同様にして回路接続材料を得た。
回路の接続後、上記接続部を含むFPCの隣接回路間の抵抗値を、初期と、85℃、85%RHの高温高湿槽中に500時間保持した後にマルチメータで測定した。抵抗値は隣接回路間の抵抗150点の平均(x+3σ)で示した。実施例1で得られた回路接続材料は良好な接続信頼性を示した。また、初期の接続抵抗も低く、高温高湿試験後の抵抗の上昇もわずかであり、高い耐久性を示した。また、実施例2〜18も実施例1と同様に良好な信頼性が得られた。これらに対して、比較例は、硬化反応が不十分であるため接着状態が悪く、初期の接続抵抗が高くなった。
回路の接続後、90度剥離、剥離速度50mm/分で接着力測定を行った。比較例は硬化反応が不十分で、接着強度に200gf/cm程度と接着力が低かったが、実施例1〜18では1000gf/cm程度と良好な接着力が得られた。
得られた回路接続材料を30℃の恒温槽で30日間処理し、上記と同様にして回路の接続を行い保存性を評価した。
得られた回路接続材料を用いて、ライン幅50μm、ピッチ100μm、厚み18μmの銅回路を交互に250本配置した櫛形回路を有するプリント基板とライン幅50μm、ピッチ100μm、厚み18μmの銅回路を500本有するフレキシブル回路板(FPC)を160℃、3MPaで10秒間加熱加圧して幅2mmにわたり接続した。この接続体の櫛形回路に100Vの電圧を印加し、85℃85%RH高温高湿試験500時間後の絶縁抵抗値を測定した。
厚み35μm、5mm×5mmの回路用接続材料を用い、これを厚み0.7mm、15mm×15mmのガラスにはさみ、150℃、2MPa、10秒の条件で加熱加圧を行った。初期の面積(A)と加熱加圧後の面積(B)を用いて流動性(B)/(A)の値を求めたところ、実施例1は1.9であり、実施例2〜10についても1.3〜3.0の範囲内であった。
実施例1の回路用接続材料の、硬化後の40℃での弾性率を測定したところ1500MPaであった。
得られた回路接続材料を用いて、示差走査熱量計(DSC TAインスツルメント社製 商品名910型)を用いて10℃/分の測定において、発熱反応の立ち上がり温度(Ta)、ピーク温度(Tp)、終了温度(Te)を求めた。
Claims (7)
- フェイスダウン方式により半導体チップを基板と接着フィルムで接着固定すると共に両者の電極どうしを電気的に接続するためのフィルム状異方導電性回路接続材料であって、下記(1)〜(4)の成分を必須とし、
(1)加熱により遊離ラジカルを発生する硬化剤
(2)分子量10000以上の水酸基含有樹脂
(3)ラジカル重合性物質
(4)導電性粒子、
2層構成であり、
前記2層構成が、前記硬化剤と前記導電性粒子とを分離するように、前記硬化剤を含有する層と前記導電性粒子を含有する層とからなる構成である回路接続材料。
- 第一の接続端子を有する第一の回路部材と、第二の接続端子を有する第二の回路部材とが、第一の接続端子と第二の接続端子を対向して配置されており、前記対向配置した第一の接続端子と第二の接続端子の間に請求項1記載の回路接続材料が介在されており、前記対向配置した第一の接続端子と第二の接続端子が電気的に接続されている回路端子の接続構造。
- 第一の接続端子を有する第一の回路部材と、第二の接続端子を有する第二の回路部材とが、第一の接続端子と第二の接続端子を対向して配置されており、前記対向配置した第一の接続端子と第二の接続端子の間にラジカル重合による硬化性を有する回路接続材料が介在されており、前記接続端子の少なくとも一方の表面が金、銀、錫及び白金族から選ばれる金属であり、前記対向配置した第一の接続端子と第二の接続端子が電気的に接続されており、
ラジカル重合による硬化性を有する回路接続材料が請求項1記載の回路接続材料である回路端子の接続構造。 - 前記第一の回路部材が半導体チップであって、前記第一の接続端子がその電極であって、前記第二の回路部材が基板であって、前記第二の接続端子がその電極である請求項2又は3に記載の回路端子の接続構造。
- 第一の接続端子を有する第一の回路部材と、第二の接続端子を有する第二の回路部材とを、第一の接続端子と第二の接続端子を対向して配置し、前記対向配置した第一の接続端子と第二の接続端子の間に請求項1記載の回路接続材料を介在させ、加熱加圧して前記対向配置した第一の接続端子と第二の接続端子を電気的に接続させる回路端子の接続方法。
- 第一の接続端子を有する第一の回路部材と、第二の接続端子を有する第二の回路部材とを、第一の接続端子と第二の接続端子を対向して配置し、前記対向配置した第一の接続端子と第二の接続端子の間にラジカル重合による硬化性を有する回路接続材料を介在させ、加熱加圧して前記対向配置した第一の接続端子と第二の接続端子を電気的に接続させる回路端子の接続方法であって、前記接続端子の少なくとも一方の表面が金、銀、錫及び白金族から選ばれる金属であり、ラジカル重合による硬化性を有する回路接続材料を表面が金、銀、錫及び白金族から選ばれる金属である一方の接続端子に形成した後、もう一方の回路電極を位置合わせし加熱、加圧して接続し、
ラジカル重合による硬化性を有する回路接続材料が請求項1記載の回路接続材料である回路端子の接続方法。 - 前記第一の回路部材が半導体チップであって、前記第一の接続端子がその電極であって、前記第二の回路部材が基板であって、前記第二の接続端子がその電極である請求項5又は6に記載の回路端子の接続方法。
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