JP3982109B2 - Method for producing compound semiconductor epitaxial wafer - Google Patents
Method for producing compound semiconductor epitaxial wafer Download PDFInfo
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- JP3982109B2 JP3982109B2 JP12477599A JP12477599A JP3982109B2 JP 3982109 B2 JP3982109 B2 JP 3982109B2 JP 12477599 A JP12477599 A JP 12477599A JP 12477599 A JP12477599 A JP 12477599A JP 3982109 B2 JP3982109 B2 JP 3982109B2
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- Prior art keywords
- epitaxial wafer
- algaas
- additive
- compound semiconductor
- layer
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Description
【０００１】
【発明の属する技術分野】
本発明は、化合物半導体エピタキシャルウェハの製造方法に関する。
【０００２】
【従来の技術】
図３はＩｎＧａＡｓ／ＡｌＧａＡｓ系ＨＥＭＴ構造エピタキシャルウェハの構造図である。
【０００３】
このエピタキシャルウェハは、ＧａＡｓ基板１上に無添加ＡｌＧａＡｓバッファ層２、無添加ＩｎＧａＡｓ電子走行層３、無添加ＡｌＧａＡｓスペーサ層４、Ｓｉドープｎ−ＡｌＧａＡｓキャリア供給層５及びＳｉドープｎ−ＧａＡｓオーミックコンタクト層６を順次結晶成長させた構造になっている。
【０００４】
従来、このような構造をＭＯＶＰＥ法で成長させる場合、無添加ＡｌＧａＡｓスペーサ層は無添加ＡｌＧａＡｓバッファ層と同じＶ／III 比下で結晶成長させていた。このＶ／III 比は通常５０〜８０程度であった。
【０００５】
【発明が解決しようとする課題】
しかしながら、近年、ＨＥＭＴのトランジスタ性能向上の要求が強まるにつれてＨＥＭＴ構造のエピタキシャルウェハに対しても２次元電子ガス移動度向上の要求が強まってきた。
【０００６】
そこで、本発明の目的は、上記課題を解決し、ＩｎＧａＡｓ／ＡｌＧａＡｓ系ＨＥＭＴ構造エピタキシャルウェハの２次元電子ガス移動度を向上させた化合物半導体エピタキシャルウェハの製造方法を提供することにある。
【０００７】
【課題を解決するための手段】
上記目的を達成するために本発明は、ＩｎＧａＡｓ／ＡｌＧａＡｓ系ＨＥＭＴ構造の化合物半導体エピタキシャルウェハをＭＯＶＰＥ法で成長させる際に、電子走行層となる無添加ＩｎＧａＡｓ層と、キャリア供給層となるｎ−ＡｌＧａＡｓ層との間に挿入される無添加Ａｌ ｘ Ｇａ １−ｘ Ａｓ（ｘ＝０．２８）スペーサ層を１１０以上のＶ／ＩＩＩ比下で結晶成長させるものである。
【０００８】
【発明の実施の形態】
以下、本発明の実施の形態を添付図面に基づいて詳述する。
【０００９】
図１は本発明の化合物半導体エピタキシャルウェハの製造方法を適用したＨＥＭＴ構造エピタキシャルウェハの一実施の形態を示す構造図である。
【００１０】
このエピタキシャルウェハは、ＧａＡｓ基板１の上に、無添加ＡｌＧａＡｓバッファ層２、無添加ＩｎＧａＡｓ電子走行層３、無添加ＡｌＧａＡｓスペーサ層４、Ｓｉドープｎ−ＡｌＧａＡｓキャリア供給層５を順次形成したものである。
【００１１】
表１は図１に示した化合物半導体エピタキシャルウェハの各層の厚さ、キャリヤ濃度及び混晶比を示したものである。
【００１２】
【表１】
図１に示した構造の２次元電子ガス移動度評価用ＨＥＭＴ構造エピタキシャルウェハを無添加ＡｌＧａＡｓスペーサ層４を成長させるときのＶ／III 比を５０から２００まで１０水準に変化させてＭＯＶＰＥ法により成長させた。
【００１４】
図２は無添加ＡｌＧａＡｓスペーサ層を成長させるときのＶ／III 比を５０から２００まで変化させたときの評価結果を示す図であり、横軸がＶ／III 比を示し、縦軸が移動度を示している。
【００１５】
同図よりＶ／III 比が１１０までは移動度が徐々に増加し、Ｖ／III 比が１１０以上では移動度は略一定になっていることが分かる。また、シートキャリア濃度は１０水準とも略一定であった。
【００１６】
以上のことから、無添加ＡｌＧａＡｓスペーサ層４を１１０以上のＶ／III 比下で結晶成長させることにより、ＩｎＧａＡｓ／ＡｌＧａＡｓ系ＨＥＭＴ構造エピタキシャルウェハの２次元電子ガス移動度を向上させることができることが分かった。
【００１７】
【発明の効果】
以上要するに本発明によれば、次のような優れた効果を発揮する。
【００１８】
ＩｎＧａＡｓ／ＡｌＧａＡｓ系ＨＥＭＴ構造エピタキシャルウェハの２次元電子ガス移動度を向上させた化合物半導体エピタキシャルウェハの製造方法の提供を実現することができる。
【図面の簡単な説明】
【図１】本発明の化合物半導体エピタキシャルウェハの製造方法を適用したＨＥＭＴ構造エピタキシャルウェハの一実施の形態を示す構造図である。
【図２】無添加ＡｌＧａＡｓスペーサ層を成長させるときのＶ／III 比を５０から２００まで変化させたときの評価結果を示す図である。
【図３】ＩｎＧａＡｓ／ＡｌＧａＡｓ系ＨＥＭＴ構造エピタキシャルウェハの構造図である。
【符号の説明】
１ ＧａＡｓ基板
２ 無添加ＡｌＧａＡｓバッファ層
３ 無添加ＩｎＧａＡｓ電子走行層
４ 無添加ＡｌＧａＡｓスペーサ層
５ Ｓｉドープｎ−ＡｌＧａＡｓキャリア供給層[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a compound semiconductor epitaxial wafer.
[0002]
[Prior art]
FIG. 3 is a structural diagram of an InGaAs / AlGaAs HEMT structure epitaxial wafer.
[0003]
This epitaxial wafer includes an additive-free AlGaAs buffer layer 2, additive-free InGaAs electron transit layer 3, additive-free AlGaAs spacer layer 4, Si-doped n-AlGaAs
[0004]
Conventionally, when such a structure is grown by the MOVPE method, the additive-free AlGaAs spacer layer has been crystal-grown under the same V / III ratio as the additive-free AlGaAs buffer layer. This V / III ratio was usually about 50-80.
[0005]
[Problems to be solved by the invention]
However, in recent years, the demand for improving the two-dimensional electron gas mobility has increased for the epitaxial wafer having the HEMT structure as the demand for improving the transistor performance of the HEMT has increased.
[0006]
Accordingly, an object of the present invention is to provide a method of manufacturing a compound semiconductor epitaxial wafer that solves the above-described problems and improves the two-dimensional electron gas mobility of an InGaAs / AlGaAs-based HEMT structure epitaxial wafer.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides an additive-free InGaAs layer serving as an electron transit layer and an n-AlGaAs serving as a carrier supply layer when a compound semiconductor epitaxial wafer having an InGaAs / AlGaAs HEMT structure is grown by the MOVPE method. The additive-free Al x Ga 1-x As (x = 0.28) spacer layer inserted between the layers is crystal-grown under a V / III ratio of 110 or more.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
[0009]
FIG. 1 is a structural view showing an embodiment of an HEMT structure epitaxial wafer to which the compound semiconductor epitaxial wafer manufacturing method of the present invention is applied.
[0010]
In this epitaxial wafer, an additive-free AlGaAs buffer layer 2, additive-free InGaAs electron transit layer 3, additive-free AlGaAs spacer layer 4, and Si-doped n-AlGaAs
[0011]
Table 1 shows the thickness, carrier concentration and mixed crystal ratio of each layer of the compound semiconductor epitaxial wafer shown in FIG.
[0012]
[Table 1]
The HEMT structure epitaxial wafer for two-dimensional electron gas mobility evaluation having the structure shown in FIG. 1 is grown by the MOVPE method by changing the V / III ratio from 50 to 200 to 10 levels when the additive-free AlGaAs spacer layer 4 is grown. I let you.
[0014]
FIG. 2 is a graph showing the evaluation results when the V / III ratio when growing the additive-free AlGaAs spacer layer is changed from 50 to 200. The horizontal axis indicates the V / III ratio, and the vertical axis indicates the mobility. Is shown.
[0015]
From the figure, it can be seen that the mobility gradually increases until the V / III ratio is 110, and the mobility is substantially constant when the V / III ratio is 110 or more. Further, the sheet carrier concentration was substantially constant for all 10 levels.
[0016]
From the above, it can be seen that the two-dimensional electron gas mobility of the InGaAs / AlGaAs HEMT structure epitaxial wafer can be improved by crystal growth of the additive-free AlGaAs spacer layer 4 under a V / III ratio of 110 or more. It was.
[0017]
【The invention's effect】
In short, according to the present invention, the following excellent effects are exhibited.
[0018]
It is possible to provide a method of manufacturing a compound semiconductor epitaxial wafer in which the two-dimensional electron gas mobility of the InGaAs / AlGaAs HEMT structure epitaxial wafer is improved.
[Brief description of the drawings]
FIG. 1 is a structural diagram showing an embodiment of a HEMT structure epitaxial wafer to which a method for producing a compound semiconductor epitaxial wafer of the present invention is applied.
FIG. 2 is a diagram showing an evaluation result when a V / III ratio is changed from 50 to 200 when an additive-free AlGaAs spacer layer is grown.
FIG. 3 is a structural diagram of an InGaAs / AlGaAs-based HEMT structure epitaxial wafer.
[Explanation of symbols]
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12477599A JP3982109B2 (en) | 1999-04-30 | 1999-04-30 | Method for producing compound semiconductor epitaxial wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12477599A JP3982109B2 (en) | 1999-04-30 | 1999-04-30 | Method for producing compound semiconductor epitaxial wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000315787A JP2000315787A (en) | 2000-11-14 |
| JP3982109B2 true JP3982109B2 (en) | 2007-09-26 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12477599A Expired - Fee Related JP3982109B2 (en) | 1999-04-30 | 1999-04-30 | Method for producing compound semiconductor epitaxial wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3982109B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006245155A (en) * | 2005-03-02 | 2006-09-14 | Hitachi Cable Ltd | Mosfet and epitaxial wafer therefor |
| JP2006286755A (en) * | 2005-03-31 | 2006-10-19 | Hitachi Cable Ltd | Method of manufacturing group iii-v compound semiconductor |
-
1999
- 1999-04-30 JP JP12477599A patent/JP3982109B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000315787A (en) | 2000-11-14 |
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