JP3969660B2 - White LED lamp - Google Patents

White LED lamp Download PDF

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JP3969660B2
JP3969660B2 JP2003287089A JP2003287089A JP3969660B2 JP 3969660 B2 JP3969660 B2 JP 3969660B2 JP 2003287089 A JP2003287089 A JP 2003287089A JP 2003287089 A JP2003287089 A JP 2003287089A JP 3969660 B2 JP3969660 B2 JP 3969660B2
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light
chip
led lamp
mold layer
white led
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JP2005057089A (en
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巌 東海林
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Stanley Electric Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Description

本発明はLEDランプに関するものであり、詳細には、LEDチップに青色発光のものが採用されると共に、このLEDチップの保護を兼ねて周囲を覆う樹脂中に、LEDチップからの光に励起され黄色発光を行う蛍光体を分散させておくことで、点灯時には青色と黄色との混合色である白色発光が得られるものとした白色LEDランプの構成に係るものである。   The present invention relates to an LED lamp, and more specifically, an LED chip that emits blue light is employed, and is also excited by light from the LED chip in a resin that covers the periphery of the LED chip to protect it. The present invention relates to a configuration of a white LED lamp in which phosphors that emit yellow light are dispersed so that white light emission that is a mixed color of blue and yellow can be obtained at the time of lighting.

従来のこの種の白色LEDランプ90の形成方法としては、図11に示すように基板91上にマウントされたLEDチップ92を保護するために、このLEDチップ92を覆うレンズ93を形成するための、透明エポキシ樹脂93a中に所定の割合(例えば25重量%)で蛍光体93bを混和しておき、印刷手段、注入手段など適宜な手段で所定位置に配置し、熱硬化などで固化させるものである。(例えば特許文献1参照。)
特開2000−223750号公報(段落0033〜段落0037、図3)
As a conventional method of forming this type of white LED lamp 90, as shown in FIG. 11, in order to protect the LED chip 92 mounted on the substrate 91, a lens 93 for covering the LED chip 92 is formed. The phosphor 93b is mixed in the transparent epoxy resin 93a at a predetermined ratio (for example, 25% by weight), placed at a predetermined position by an appropriate means such as a printing means or an injection means, and solidified by thermosetting or the like. is there. (For example, refer to Patent Document 1.)
JP 2000-223750 A (paragraphs 0033 to 0037, FIG. 3)

ここで、前記LEDランプにおいては、白色発光が得られるものとなったことで、例えば、家庭用の照明器具、車両用の照明器具、携帯用の照明器具など新たな用途が検討されるものとなってきている。しかしながら、上記した従来のLEDランプにおいては、錯乱損失の発生と、リフレクタを設けたときの有効性が低いことで現在以上の発光効率の向上が困難であるという問題点を生じている。   Here, in the LED lamp, since white light emission can be obtained, for example, new uses such as household lighting fixtures, vehicle lighting fixtures, and portable lighting fixtures are considered. It has become to. However, the above-described conventional LED lamp has problems that it is difficult to improve the light emission efficiency more than the present due to the occurrence of confusion loss and the low effectiveness when the reflector is provided.

即ち、前記錯乱損失は、LEDチップを覆う樹脂全体に均一な状態で蛍光体が分散されていることにより、前記LEDチップから発せられた光が、蛍光体が存在する領域を通過する距離が長くなり、複数の蛍光体に当接することで必要以上に強く錯乱(拡散)が行われて生じる現象であり、また、同じ要因でLEDチップの側方などにLEDチップからの光を照射方向に向けて反射するリフレクタを設けても、過剰に錯乱が行われ方向性を失っている光には実質的な効果は期待できないものとなる。   That is, the confusion loss is caused by the fact that the phosphors are uniformly dispersed throughout the resin covering the LED chip, so that the light emitted from the LED chip has a long distance to pass through the region where the phosphor exists. This is a phenomenon that occurs due to the confusion (diffusion) that is stronger than necessary due to contact with a plurality of phosphors, and the light from the LED chip is directed to the side of the LED chip in the irradiation direction due to the same factors. Even if a reflector that reflects light is provided, a substantial effect cannot be expected for light that is excessively confused and loses directionality.

本発明は、前記した従来の課題を解決するための具体的な手段として窒化ガリウム系化合物半導体(InxAlYGa1-X-YN,0≦Y,X+Y≦1)から成る活性層を有するLEDチップが、内面に銀メッキによるリフレクタが形成されたチップ取付凹部が設けられているセラミック部材で形成された表面実装タイプのパッケージの、前記チップ取付凹部内の配線パターンにボンディングにより取付けが行われており、前記LEDチップにはのLEDチップの周囲を適宜の肉厚で略円筒形に覆う蛍光体が分散されたモールド樹脂による内側モールド層と、この内側モールド層の外側を覆うように前記チップ取付凹部内に充填される透明モールド樹脂による外側モールド層とから成る複層のモールドが行われていることを特徴とする白色LEDランプを提供することで課題を解決するものである。
The present invention provides an active layer made of a gallium nitride compound semiconductor (In x Al Y Ga 1-XY N, 0 ≦ Y, X + Y ≦ 1) as a specific means for solving the above-described conventional problems. The LED chip is mounted on the wiring pattern in the chip mounting recess of the surface mounting type package formed of a ceramic member provided with a chip mounting recess having a silver plated reflector formed on the inner surface. We have, an inner mold layer by molding resin phosphor covering substantially cylindrical in an appropriate thickness around this LED chips are dispersed in the LED chip, so as to cover the outside of the inner mold layer child provide white LED lamp, wherein a mold of a double layer composed of an outer mold layer of a transparent mold resin is filled in the chip-mounting recess is being performed In is intended to solve the problem.

以上に説明したように本発明により、窒化ガリウム系化合物半導体(InXAlYGa1-X-YN,0≦X,0≦Y,X+Y≦1)から成る活性層を有するLEDチップが、内面にリフレクタが形成されたチップ取付凹部が設けられているパッケージの、前記チップ取付凹部内の配線パターンにボンディングにより取付けが行われており、前記LEDチップにはこのLEDチップの周囲を適宜の肉厚で略円筒状に覆う蛍光体が分散されたモールド樹脂による内側モールド層と、この内側モールド層の外側を覆うように前記チップ取付凹部内に充填される透明モールド樹脂による外側モールド層とから成る複層のモールドが行われている白色LEDランプとしたことで、LEDチップから発せられた光が外部に放射されるまでの光路中で、蛍光体に接触する回数を適正化し、過剰な回数接触することで生じる過剰な拡散、錯乱により光量に内部損失が生じるのをなくして、この種の白色LEDランプの性能向上に極めて優れた効果を奏するものである。 As described above, according to the present invention, an LED chip having an active layer made of a gallium nitride-based compound semiconductor (In X Al Y Ga 1-XY N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) A package having a chip mounting recess having a reflector formed on the inner surface thereof is attached to the wiring pattern in the chip mounting recess by bonding, and the LED chip is surrounded by an appropriate wall around the LED chip. An inner mold layer made of a mold resin in which a phosphor covering a substantially cylindrical shape is dispersed, and an outer mold layer made of a transparent mold resin filled in the chip mounting recess so as to cover the outside of the inner mold layer By adopting a white LED lamp that has been molded in multiple layers, the number of times of contact with the phosphor is optimized in the optical path until the light emitted from the LED chip is emitted to the outside. Excessive diffusion caused by a number of contacts, eliminating the internal loss in the light amount caused by confusion, in which exhibits the excellent effect in improving the performance of this type of white LED lamps.

また、上記のように過剰な拡散が行われなくなったことで、前記LEDチップから発せられる光は、蛍光体の層を透過した後にも方向性を有するものとなり、チップ収納凹部の内側面などにリフレクタを形成するときには、反射してパッケージ外部に放射させることが可能となる。従って、前記リフレクタにより白色LEDランプの出力光として回収される光も出力として加算することが可能となり、一層の性能向上が可能となるものである。   In addition, since excessive diffusion is not performed as described above, the light emitted from the LED chip has directionality even after passing through the phosphor layer, and the light is emitted from the inner surface of the chip housing recess. When the reflector is formed, it can be reflected and emitted outside the package. Therefore, the light collected as the output light of the white LED lamp by the reflector can be added as an output, and the performance can be further improved.

つぎに、本発明を図に示す実施形態に基づいて詳細に説明する。図1、図2に示すものは本発明に係る白色LEDランプ1の第一実施形態であり、本発明の白色LEDランプ1においては、例えば、セラミック、樹脂など絶縁性部材で形成されたパッケージ2には、上面からチップ収納凹部2aが形成され、このチップ収納凹部2aの底面には導電性部材により配線パターン2bが形成され、該配線パターン2bは前記パッケージ2の裏面に至り延長されて端子部2cとされている。   Below, this invention is demonstrated in detail based on embodiment shown in a figure. 1 and 2 show a first embodiment of a white LED lamp 1 according to the present invention. In the white LED lamp 1 of the present invention, for example, a package 2 formed of an insulating member such as ceramic or resin. A chip housing recess 2a is formed from the top surface, and a wiring pattern 2b is formed on the bottom surface of the chip housing recess 2a by a conductive member. The wiring pattern 2b extends to the back surface of the package 2 to be a terminal portion. 2c.

そして、前記配線パターン2bの一方にはLEDチップ3がハンダ付け、導電接着剤などによりダイボンドされ、他の一方の配線パターン2bと金線4によりワイヤボンドが行われ、パッケージ2の裏面から端子部2cに給電を行うことで前記LEDチップ3の点灯が行えるものとされている。尚、本発明においては、前記チップ収納凹部2aの側面には、銀メッキ(蒸着)などによる反射処理が行われ、リフレクタ5が形成されている。   Then, the LED chip 3 is soldered to one side of the wiring pattern 2b, die-bonded with a conductive adhesive or the like, wire-bonded with the other wiring pattern 2b and the gold wire 4, and the terminal portion from the back surface of the package 2 The LED chip 3 can be turned on by supplying power to 2c. In the present invention, a reflector 5 is formed on the side surface of the chip housing recess 2a by a reflection process such as silver plating (evaporation).

次いで、透明シリコーン樹脂6a中に蛍光体6bを分散した部材で前記LEDチップ3を覆い内側モールド層6を形成する。このときに、前記内側モールド層6は、LEDチップ3が放射する青色光と、内側モールド層6中の蛍光体6bにLEDチップ3からの光が当接して励起される黄色光とが混合され白色光を得るのに最適な量の蛍光体6bが保持されている。前記蛍光体6bとしては、セリウム賦活のイットリウム・アルミン酸塩系の蛍光体を使用する。   Next, the inner mold layer 6 is formed by covering the LED chip 3 with a member in which the phosphor 6b is dispersed in the transparent silicone resin 6a. At this time, the inner mold layer 6 is mixed with blue light emitted from the LED chip 3 and yellow light that is excited when the light from the LED chip 3 comes into contact with the phosphor 6b in the inner mold layer 6. An optimum amount of the phosphor 6b is obtained to obtain white light. As the phosphor 6b, a cerium activated yttrium aluminate phosphor is used.

また、前記内側モールド層6の形成にあたっては、前記LEDチップ3からの光がこの内側モールド層6を透過するときの光路があまり長くならないように、例えば、頂上面が半球の円筒状などとされている。そして、前記内側モールド層6が形成された後には80℃程度と硬化温度よりも低い温度の加熱を行い、反応基を残す状態で仮硬化を行わせる。   In forming the inner mold layer 6, for example, the top surface is a hemispherical cylinder so that the light path when the light from the LED chip 3 passes through the inner mold layer 6 is not so long. ing. Then, after the inner mold layer 6 is formed, heating at a temperature of about 80 ° C. and lower than the curing temperature is performed, and temporary curing is performed while leaving a reactive group.

続いて、前記チップ収納凹部2aの残りの部分に、蛍光体6bが添加されることのない透明シリコーン樹脂のみを注入し、外側モールド層7を形成する。しかる後に、全体を80℃以上の温度で加熱し硬化処理を行う。このようにすることで、前記内側モールド層6中の残余していた反応基も反応するものとなり、内側モールド層6と外側モールド層7とは一体化して硬化する。   Subsequently, only the transparent silicone resin to which the phosphor 6b is not added is injected into the remaining portion of the chip housing recess 2a to form the outer mold layer 7. Thereafter, the whole is heated at a temperature of 80 ° C. or higher to perform a curing process. By doing so, the remaining reactive groups in the inner mold layer 6 also react, and the inner mold layer 6 and the outer mold layer 7 are integrated and cured.

次いで、以上のようにして形成が行われた本発明の白色LEDランプ1の作用および効果について説明を行う。図3は本発明に係る白色LEDランプ1における配光特性Dnw、Dnnを示すものであり、配光特性Dnwは前記パッケージ2の長径側、即ち、チップ収納凹部2aの長径側に平行する方向への配光特性であり、配光特性Dnnは短径側に対応する配光特性である。   Next, the operation and effect of the white LED lamp 1 of the present invention formed as described above will be described. FIG. 3 shows the light distribution characteristics Dnw and Dnn in the white LED lamp 1 according to the present invention. The light distribution characteristic Dnw is in a direction parallel to the major axis side of the package 2, that is, the major axis side of the chip housing recess 2a. The light distribution characteristic Dnn is a light distribution characteristic corresponding to the short diameter side.

上記配光特性Dnw、Dnnを観察すると、リフレクタ5の反射光も加算される左右30〜40°方向が、明らかにパッケージ2の正面方向よりも光量が増加しており、本発明の白色LEDランプ1からの光は、前記LEDチップ3を発光の中心とする方向性を有していて、それ故にリフレクタ5に達した光が照射方向に反射されているものであることが認められる。   When the light distribution characteristics Dnw and Dnn are observed, the amount of light in the left and right directions of 30 to 40 ° to which the reflected light of the reflector 5 is added is clearly larger than the front direction of the package 2, and the white LED lamp of the present invention It can be seen that the light from 1 has a directionality with the LED chip 3 as the center of light emission, and therefore the light reaching the reflector 5 is reflected in the irradiation direction.

これに対して、図4に示す配光特性Dow、Donは、チップ収納凹部2aに注入されている透明樹脂の全体に均一に蛍光体を分散させた従来例の白色LEDランプにおける配光特性であり、配光特性Dowはパッケージの長径側に対する配光特性であり、配光特性Donは短径側に対する配光特性である。   On the other hand, the light distribution characteristics Dow and Don shown in FIG. 4 are the light distribution characteristics in the conventional white LED lamp in which the phosphor is uniformly dispersed throughout the transparent resin injected into the chip housing recess 2a. The light distribution characteristic Dow is the light distribution characteristic with respect to the major axis side of the package, and the light distribution characteristic Don is the light distribution characteristic with respect to the minor axis side.

上記配光特性Dow、Donを観察すると、両配光特性Dow、Donはパッケージの正面方向に最高照度があり、実質的には両者が重なり合う略円形状の配光特性、即ち、完全拡散光的傾向を示す配光特性を示すものであり、何れの配光特性Dow、Donにもリフレクタ5による光量増加の効果が認められないものである。   When the light distribution characteristics Dow and Don are observed, the light distribution characteristics Dow and Don have the highest illuminance in the front direction of the package, and are substantially circular light distribution characteristics in which both overlap. It shows a light distribution characteristic indicating a tendency, and no light distribution increase effect by the reflector 5 is recognized in any light distribution characteristic Dow, Don.

即ち、チップ収納凹部2a内に充填される透明シリコーン樹脂の全体中に均一に蛍光体を分散させる従来の構成においては、LEDチップから放出された光はチップ収納凹部2a内に充填された樹脂中を通過している過程の時点ですでに必要以上の回数の蛍光体との衝突を行うものとなり、その衝突の度に拡散して損失となる部分を生じている。従って、リフレクタに達した時点では上記拡散により方向性を失っており、特定方向への反射は生ぜず、リフレクタは機能を生じないのである。   That is, in the conventional configuration in which the phosphor is uniformly dispersed throughout the transparent silicone resin filled in the chip housing recess 2a, the light emitted from the LED chip is contained in the resin filled in the chip housing recess 2a. At the time of the process of passing through, a collision with the phosphor more than necessary is already performed, and a portion which is diffused and lost every time the collision occurs is generated. Therefore, when reaching the reflector, the directionality is lost due to the diffusion, and no reflection in a specific direction occurs, and the reflector does not function.

これに対して、本発明の構成とした白色LEDランプ1においては、蛍光体5が限定された厚みを有する内側モールド層6内にのみ配置されているものとしたことで、LEDチップ3から射出される光の蛍光体6bと衝突を行う回数が適正化され、過剰な衝突回数による過剰な拡散が行われないものとして、これに起因する内部での損失の発生も防止すると共に、光の方向性も失わないものとして、リフレクタ5による白色LEDランプ1としての照射方向への反射も可能とし、一層の光量増加を可能とするものである。   On the other hand, in the white LED lamp 1 having the configuration of the present invention, the phosphor 5 is emitted only from the inner mold layer 6 having a limited thickness. The number of times the light collides with the fluorescent substance 6b is optimized, and excessive diffusion due to the excessive number of collisions is not performed, thereby preventing the occurrence of internal loss due to this and the direction of light. As a result, the reflector 5 can also reflect in the irradiation direction as the white LED lamp 1 and further increase the amount of light.

また、図5に示す光量曲線Bnは、本発明における内側モールド層6内における蛍光体6bの添加量を変化させたときの光量変化の状態を示すものであり、図6は従来例におけるチップ収納凹部2a内に充填する透明シリコーン樹脂の全体中に均一に蛍光体を分散させる状態での、添加量を変化させたときの光量曲線Boの変化の状態を示すものである。   A light amount curve Bn shown in FIG. 5 shows a state of light amount change when the amount of the phosphor 6b added in the inner mold layer 6 in the present invention is changed. FIG. The state of change of the light amount curve Bo when the addition amount is changed in a state where the phosphor is uniformly dispersed in the entire transparent silicone resin filled in the recess 2a is shown.

先ず、本発明のもの(図5参照)では、内側モールド層6の透明シリコーン樹脂6aに対し混和、分散する蛍光体6bの割合を重量%で暫時に増加させていったときの状態を輝度の変化として捕らえたものであり、添加率を増すに従い輝度も向上し、約60(重量%)の添加では、この状態でLEDチップから放射されている光束の量、および、蛍光体からの波長変換された光量の和が、最大値と思われる約80(lm/W)に達するものとなる。   First, in the case of the present invention (see FIG. 5), the state when the ratio of the phosphor 6b mixed and dispersed in the transparent silicone resin 6a of the inner mold layer 6 is increased by weight% for a while. The brightness is improved as the addition rate increases, and the addition of about 60% by weight adds the amount of luminous flux emitted from the LED chip in this state, and converts the wavelength from the phosphor. The sum of the light amounts thus reached reaches about 80 (lm / W) which is considered to be the maximum value.

これに対して、従来例のものでは、約12(重量%)の蛍光体の添加で輝度の上昇値に飽和が認められ、そのときの輝度の最大値は約68(lm/W)である。そして、両者の数値の相違は、従来例の構成ではより長い(厚い)蛍光体が存在する層を透過してLEDチップからの光が外部に放射されるので、途上での光と蛍光体との衝突回数が増え、必要以上の拡散を生じて内部での損失を生じているものと考察できる。   On the other hand, in the case of the conventional example, saturation is recognized in the increase value of luminance by adding about 12 (wt%) phosphor, and the maximum value of luminance at that time is about 68 (lm / W). . The difference between the two values is that light from the LED chip is radiated to the outside through the layer in which the longer (thick) phosphor is present in the configuration of the conventional example. It can be considered that the number of collisions increased, causing diffusion more than necessary and causing internal loss.

尚、ここで、本発明と従来例との蛍光体の添加量を単純に比較すると、例えば同じ10(重量%)においての効率は、従来例では約66(lm/W)、本発明では約47(lm/W)となり、従来例の方が効率が高いように見えるが、これは、基準となる透明シリコーン樹脂の総量が従来例が圧倒的に大量であるからであり、蛍光体の使用量では本発明の方が少量である。   Here, when the addition amount of the phosphor of the present invention and the conventional example is simply compared, for example, the efficiency at the same 10 (% by weight) is about 66 (lm / W) in the conventional example, and about 47 (lm / W), the efficiency of the conventional example seems to be higher, but this is because the total amount of the standard transparent silicone resin is overwhelmingly large and the use of phosphors The amount of the present invention is smaller in amount.

以上、説明のように本発明により、透明シリコーン樹脂6aと蛍光体6bとを適宜な比率で混和した内側モールド層6を形成し、更にその外側に透明シリコーン樹脂のみによる外側モールド層7を形成した白色LEDランプ1としたことで、第一には、LEDチップからの光に対して適正な量の蛍光体6bを適正な透過距離として配置することを可能とし、過剰な散乱を生じることをなくし、外部に取出し可能とする光量を増加させる。   As described above, according to the present invention, the inner mold layer 6 in which the transparent silicone resin 6a and the phosphor 6b are mixed at an appropriate ratio is formed, and the outer mold layer 7 made of only the transparent silicone resin is formed on the outer side. By using the white LED lamp 1, first, it is possible to arrange an appropriate amount of the phosphor 6b with respect to the light from the LED chip as an appropriate transmission distance, and to avoid excessive scattering. Increase the amount of light that can be taken out to the outside.

また、第二には、上記したように過剰な散乱を生じないようにしたことで、チップ収納凹部2aの側面などにリフレクタ5を設けたときには、白色LEDランプ1の照射方向に光を反射できるものとして、一層の光量増加を可能とするものである。   Second, by preventing excessive scattering as described above, light can be reflected in the irradiation direction of the white LED lamp 1 when the reflector 5 is provided on the side surface of the chip housing recess 2a or the like. As a thing, the further light quantity increase is enabled.

図7は本発明に係る白色LEDランプ1の第二実施形態を示すものであり、この第二実施形態におけるLEDチップ31は、サファイヤ基板上にInGaNの活性層を持ち、上面には一対の正、負電極が設けられている。前記サファイヤ基板側をパッケージ2のチップ収納凹部2a内に接着剤などで固定し、正、負電極をそれぞれの配線パターン2bに金線4によりワイヤーボンディングし、その後には、第一実施形態と同様にして内側モールド層6と、外側モールド層7とを形成する。   FIG. 7 shows a second embodiment of the white LED lamp 1 according to the present invention. The LED chip 31 in this second embodiment has an InGaN active layer on a sapphire substrate and a pair of positive electrodes on the upper surface. A negative electrode is provided. The sapphire substrate side is fixed to the chip housing recess 2a of the package 2 with an adhesive or the like, and positive and negative electrodes are wire-bonded to the respective wiring patterns 2b with gold wires 4, and thereafter, as in the first embodiment. Thus, the inner mold layer 6 and the outer mold layer 7 are formed.

図8は本発明に係る白色LEDランプ1の第三実施形態を示すものであり、この第三実施形態におけるLEDチップ31は、サファイヤ基板上にInGaNの活性層を持ち、上面には一対の正、負電極が設けられている第二実施形態のものと同じものが用いられている。但し、パッケージ2への取付けにあたっては、上下面を反転させ、正、負電極の側で配線パターン2bに固定する、いわゆる、フェースダウンで行われている。そして、その後には、第一実施形態、第二実施形態と同様にして内側モールド層6と、外側モールド層7とを形成する。   FIG. 8 shows a third embodiment of the white LED lamp 1 according to the present invention. The LED chip 31 in this third embodiment has an InGaN active layer on a sapphire substrate and a pair of positive electrodes on the upper surface. The same one as that of the second embodiment provided with the negative electrode is used. However, the attachment to the package 2 is performed by so-called face-down in which the upper and lower surfaces are reversed and fixed to the wiring pattern 2b on the positive and negative electrode sides. Thereafter, the inner mold layer 6 and the outer mold layer 7 are formed in the same manner as in the first embodiment and the second embodiment.

図9は本発明に係る白色LEDランプ1の第四実施形態を示すものであり、上記説明の第一〜第三実施形態は、何れも1個のLEDチップ3(31)をパッケージ2内にマウントするものであったが、本発明はこれを限定するものではなく図9に示すように複数個をマウントしても良いものである。そして、LEDチップ3(31)の形状も第一〜第三実施形態のものと何れを採用するのも自在である。   FIG. 9 shows a fourth embodiment of the white LED lamp 1 according to the present invention. In the first to third embodiments described above, one LED chip 3 (31) is incorporated in the package 2. However, the present invention is not limited to this, and a plurality may be mounted as shown in FIG. The shape of the LED chip 3 (31) can be any of the first to third embodiments.

図10は、本発明に係る白色LEDランプ1の第五実施形態を示すものであり、上記した第一実施形態〜第四実施形態は何れもLEDチップの形状、数、あるいは、取付方法に相違があるものであったが、この第五実施形態においては、前記内側モールド層の構成に相違があるものである。   FIG. 10 shows a fifth embodiment of the white LED lamp 1 according to the present invention, and the first to fourth embodiments described above differ in the shape, number, or mounting method of the LED chips. However, in the fifth embodiment, there is a difference in the configuration of the inner mold layer.

即ち、本発明においては、チップ収納凹部2a内に行われるモールドが、内側モールド層61と外側モールド層7とで二層として形成されているが、この実施形態では更に加えて、内側モールド層61がインナー層61aとアウター層61bとの二層として構成されている。   That is, in the present invention, the mold performed in the chip housing recess 2a is formed as two layers of the inner mold layer 61 and the outer mold layer 7, but in this embodiment, in addition, the inner mold layer 61 is further added. Is configured as two layers of an inner layer 61a and an outer layer 61b.

そして、前記インナー層61aは、比較的に少ない重量%の蛍光体6bを混和した透明シリコーン樹脂6a、あるいは、透明シリコーン樹脂6aのみで前記LEDチップ3を覆い、ドーム状などと称されている半球状の頂部を有する円筒状として形成されている。   The inner layer 61a covers the LED chip 3 with a transparent silicone resin 6a mixed with a relatively small weight% of the phosphor 6b or only with the transparent silicone resin 6a, and is a hemisphere called a dome shape or the like. It is formed as a cylindrical shape having a shape-like top.

また、アウター層61bは、前記インナー層61aを一定の厚みで覆うようにして形成されるものであり、このときには、前記LEDチップ3(31)からの直射光との混色で白色光を得られるのに必要充分な量の蛍光体6bの混和、分散が行われた透明シリコーン樹脂6aが用いられる。   The outer layer 61b is formed so as to cover the inner layer 61a with a certain thickness. At this time, white light can be obtained by mixing with direct light from the LED chip 3 (31). A transparent silicone resin 6a in which a sufficient amount of phosphor 6b is mixed and dispersed is used.

このようにしたことで、LEDチップ3(31)から放射される光は、何れの方向へ向かうものも、ほぼ同じ距離のアウター層61bを透過するものとなり、即ち、蛍光体6bに対しての衝突の回数などはほぼ同一条件のものとすることができる。従って、この実施形態により形成された白色LEDランプ1は見る方向により色相が異なるなど、色ムラを生じないものとすることができる。   By doing in this way, the light radiated | emitted from LED chip 3 (31) will permeate | transmit the outer layer 61b of the substantially the same distance even if it goes to which direction, ie, with respect to the fluorescent substance 6b. The number of collisions and the like can be almost the same. Therefore, the white LED lamp 1 formed according to this embodiment does not cause color unevenness, for example, the hue varies depending on the viewing direction.

尚、上記した第一実施形態〜第五実施形態のものは何れも樹脂部材などで形成された、いわゆる面実装型のパッケージ2を採用した例で示したが、本発明はこれを限定するものではなく、この種の白色LEDランプにおいては近年、例えば懐中電灯の光源など、白熱電球を代替する照明用の用途も検討されている。   In addition, although the thing of above-described 1st embodiment-5th embodiment was shown in the example which employ | adopted so-called surface mount type package 2 formed with the resin member etc., this invention limits this However, in this type of white LED lamp, in recent years, for example, a lighting application that replaces an incandescent bulb, such as a light source of a flashlight, has been studied.

この場合、光量が必要となり駆動電力が増加されるので、LEDチップ3の冷却が従来以上に必要となり、例えばLEDチップ3がダイマウントされる部分を熱伝導に優れる金属ブロックとして形成される場合もある。本発明はこのようなケースでも当然に実施可能であり、即ち、パッケージ2の形状などを限定することはないものである。   In this case, since the amount of light is required and the driving power is increased, the LED chip 3 needs to be cooled more than before. For example, the portion where the LED chip 3 is die mounted may be formed as a metal block having excellent heat conduction. is there. The present invention can naturally be implemented in such a case, that is, the shape of the package 2 is not limited.

本発明に係る白色LEDランプの第一実施形態を示す平面図である。It is a top view which shows 1st embodiment of the white LED lamp which concerns on this invention. 図1のA−A線に沿う断面図である。It is sectional drawing which follows the AA line of FIG. 本発明に係る白色LEDランプの配光特性を示すグラフである。It is a graph which shows the light distribution characteristic of the white LED lamp which concerns on this invention. 従来例の配光特性を示すグラフである。It is a graph which shows the light distribution characteristic of a prior art example. 本発明に係る白色LEDランプにおける蛍光体の添加量と光量との関係を示すグラフである。It is a graph which shows the relationship between the addition amount and the light quantity of the fluorescent substance in the white LED lamp which concerns on this invention. 従来例の蛍光体の添加量と光量との関係を示すグラフである。It is a graph which shows the relationship between the addition amount of the fluorescent substance of a prior art example, and a light quantity. 同じく本発明に係る白色LEDランプの第二実施形態を示す断面図である。It is sectional drawing which similarly shows 2nd embodiment of the white LED lamp which concerns on this invention. 同じく本発明に係る白色LEDランプの第三実施形態を示す断面図である。It is sectional drawing which similarly shows 3rd embodiment of the white LED lamp which concerns on this invention. 同じく本発明に係る白色LEDランプの第四実施形態を示す断面図である。It is sectional drawing which similarly shows 4th embodiment of the white LED lamp which concerns on this invention. 同じく本発明に係る白色LEDランプの第五実施形態を示す断面図である。It is sectional drawing which similarly shows 5th embodiment of the white LED lamp which concerns on this invention. 従来例を示す断面図である。It is sectional drawing which shows a prior art example.

符号の説明Explanation of symbols

1……白色LEDランプ
2……パッケージ
2a……チップ収納凹部
2b……配線パターン
2c……端子部
3、31……LEDチップ
4……金線
5……リフレクタ
6、61……内側モールド層
6a……透明シリコーン樹脂
6b……蛍光体
61a……インナー層
61b……アウター層
7……外側モールド層
DESCRIPTION OF SYMBOLS 1 ... White LED lamp 2 ... Package 2a ... Chip accommodation recessed part 2b ... Wiring pattern 2c ... Terminal part 3, 31 ... LED chip 4 ... Gold wire 5 ... Reflector 6, 61 ... Inner mold layer 6a …… Transparent silicone resin 6b …… Phosphor 61a …… Inner layer 61b …… Outer layer 7 …… Outer mold layer

Claims (2)

窒化ガリウム系化合物半導体(InxAlYGa1-X-YN,0≦Y,X+Y≦1)から成る活性層を有するLEDチップが、内面に銀メッキによるリフレクタが形成されたチップ取付凹部が設けられているセラミック部材で形成された表面実装タイプのパッケージの、前記チップ取付凹部内の配線パターンにボンディングにより取付けが行われており、前記LEDチップにはのLEDチップの周囲を適宜の肉厚で略円筒形に覆う蛍光体が分散されたモールド樹脂による内側モールド層と、この内側モールド層の外側を覆うように前記チップ取付凹部内に充填される透明モールド樹脂による外側モールド層とから成る複層のモールドが行われていることを特徴とする白色LEDランプ。 An LED chip having an active layer made of a gallium nitride compound semiconductor (In x Al Y Ga 1-XY N, 0 ≦ Y, X + Y ≦ 1) has a chip mounting recess in which a silver plated reflector is formed on the inner surface. of it provided with a surface mounting type package formed by a ceramic member and said chip by bonding to the wiring pattern of the mounting in the recess are carried out mounting, appropriate meat surrounding this LED chips in the LED chip An inner mold layer made of a mold resin in which a phosphor covering a substantially cylindrical shape is dispersed, and an outer mold layer made of a transparent mold resin filled in the chip mounting recess so as to cover the outside of the inner mold layer A white LED lamp characterized in that a multilayer molding is performed. 前記内側モールド層が、分散された蛍光体の濃度が異なる複層から構成されていることを特徴とする請求項1に記載の白色LEDランプ。   2. The white LED lamp according to claim 1, wherein the inner mold layer is composed of a plurality of layers having different concentrations of dispersed phosphors.
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