JP3938079B2 - Power module substrate manufacturing method - Google Patents

Power module substrate manufacturing method Download PDF

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Publication number
JP3938079B2
JP3938079B2 JP2003078288A JP2003078288A JP3938079B2 JP 3938079 B2 JP3938079 B2 JP 3938079B2 JP 2003078288 A JP2003078288 A JP 2003078288A JP 2003078288 A JP2003078288 A JP 2003078288A JP 3938079 B2 JP3938079 B2 JP 3938079B2
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circuit board
substrate
insulating circuit
insulating
power module
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JP2004288828A (en
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敏之 長瀬
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【０００１】
【発明の属する技術分野】
この発明は、大電圧・大電流を制御する半導体装置に用いられるパワーモジュール用基板の製造方法に関するものである。
【０００２】
【従来の技術】
一般に、この種のパワーモジュール用基板にあっては、セラミックス材料からなる絶縁基板の一方の表面に金属層が、他方の表面に回路層が各々積層接合された絶縁回路基板を備え、この絶縁回路基板が金属層を介して放熱体表面に保持された構成となっている。従来、絶縁回路基板の放熱体表面への保持は、絶縁回路基板の周縁部を覆うようにして配設されたケースと、放熱体とをネジ止めすることにより行い、絶縁回路基板の周縁部を上下面及び端面の３面から拘束していた（例えば特許文献１参照）。
【０００３】
しかしながら、前記従来のパワーモジュール基板においては、絶縁回路基板の回路層表面に接合される半導体チップの発熱により、絶縁回路基板に熱膨張係数の差に起因して反りが発生するが、この変形を前記ケースが上下面及び端面の３面から拘束するため、絶縁回路基板と放熱体との間に間隙が生じ、良好な放熱効果を奏することができない等の問題があった。
また、絶縁回路基板の前記反り発生に起因して、前記ケースと，このケース及び放熱体をネジ止めするネジとに多大な負荷が作用し、前記ケース及びネジが破損する場合があり、絶縁回路基板を放熱体表面に保持できない場合もあった。
【０００４】
【特許文献１】
特開２００１−１２７２３８号公報
【０００５】
【発明が解決しようとする課題】
この発明は、このような事情を考慮してなされたもので、絶縁回路基板の放熱体表面への保持を長期に渡って良好に維持できるパワーモジュール用基板の製造方法を提供することを目的とする。
【０００６】
【課題を解決するための手段】
前記目的を達成するために、この発明は以下の手段を提案している。
請求項１に係る発明は、絶縁基板の一方の表面に金属層を接合し、他方の表面に回路層を接合した絶縁回路基板と，該絶縁回路基板の一方の表面側に設けられた放熱体とを備えたパワーモジュール用基板の製造方法であって、前記金属層の厚さを前記回路層の厚さより厚くすることによって、一方の表面が凹曲面状をなすように反った前記絶縁回路基板を形成する絶縁回路基板形成工程と、前記絶縁回路基板を前記一方の表面が前記放熱体表面と向き合うように載置して、前記他方の表面における最突出部分を押圧し、前記放熱体表面と前記絶縁回路基板の前記一方の表面とを圧接、保持する組付け工程とを有することを特徴とする。
【０００７】
請求項２に係る発明は、請求項１記載のパワーモジュール用基板の製造方法において、前記絶縁回路基板形成工程は、前記絶縁回路基板の前記他方の表面における最突出部分を、当該他方の表面の略中央部に形成することを特徴とする。
【０００８】
請求項３に係る発明は、請求項１または２に記載のパワーモジュール用基板の製造方法において、前記絶縁回路基板形成工程は、前記絶縁基板の他方の表面に純Ａｌ，Ａｌ合金，純Ｃｕ，またはＣｕ合金からなる回路層を、一方の表面に前記回路層の厚さより厚い純Ａｌ，Ａｌ合金，純Ｃｕ，またはＣｕ合金からなる金属層をそれぞれ、はんだ接合またはろう付けにより接合することを特徴とする。
【０００９】
請求項４に係る発明は、請求項１から３のいずれか一項に記載のパワーモジュール用基板の製造方法において、前記絶縁回路基板形成工程は、前記絶縁回路基板表面の前記最突出部分にこれを貫通する孔を形成し、前記組付け工程は、前記孔に締結部材を貫装するとともに、この締結部材を前記放熱体と締結することにより、前記絶縁回路基板の前記最突出部分を押圧し、前記放熱体表面と前記絶縁回路基板の前記一方の表面とを圧接、保持することを特徴とする。
【００１２】
これらの発明に係るパワーモジュール用基板の製造方法によれば、絶縁回路基板を前記のように反らせて形成し、その後、この絶縁回路基板の前記一方の表面を放熱体表面と向き合うように載置した後に、この絶縁回路基板の前記他方の表面における最突出部を押圧して、放熱体表面と絶縁回路基板の前記一方の表面とを圧接させることにより、放熱体表面に絶縁回路基板を保持するので、絶縁回路基板を反った状態から平坦にするのに要する力が、絶縁回路基板から放熱体表面に付与されることになる。
従って、この絶縁回路基板と放熱体表面との間に高い面圧が実現されるので、絶縁回路基板の周縁部を上下面及び端面の３面から拘束しなくても、絶縁回路基板の放熱体表面に沿った位置ずれ発生や放熱効果の低下発生を確実に抑制することができる。
【００１３】
さらに、絶縁回路基板の周縁部の端面を拘束する必要がないことから、絶縁回路基板の前記他方の表面に接合された半導体チップが、使用時に発熱することにより、パワーモジュール用基板全体が高温となり、絶縁回路基板に熱膨張係数の差に起因して反りが発生しようとした場合においても、この変形は、絶縁回路基板が放熱体の表面に沿った方向に伸縮することに費やされることになる。従って、使用時における半導体チップの発熱に起因して高負荷を受ける部位を、このパワーモジュール用基板が有さない構成を実現することができ、絶縁回路基板の放熱体表面への良好な保持状態を長期に渡って維持することができる。
【００１４】
特に、請求項２のパワーモジュール用基板の製造方法によれば、前記最突出部が絶縁回路基板表面における略中央部に形成されているので、絶縁回路基板を反った状態から平坦にするのに要する力が、この絶縁回路基板の前記一方の表面全体から放熱体表面に付与されることになる。従って、絶縁回路基板の前記一方の表面と放熱体表面との間に、高い面圧が全域に渡って実現されることになる。
【００１５】
また、特に、請求項３のパワーモジュール用基板の製造方法によれば、前記金属層の厚さを前記回路層の厚さより厚くしているので、これらを絶縁基板の両面に各別にはんだまたはろう付けにより接合し、その後これらが室温まで冷却されると、この冷却過程において、前記金属層の収縮量が前記回路層の収縮量より大きくなる。従って、形成された絶縁回路基板は、前記一方の表面側が凹曲面状に、前記他方の表面側が凸曲面状に各々反った状態で確実に形成されることになる。
【００１６】
【発明の実施の形態】
以下、図面を参照し、この発明の実施の形態について説明する。図１，図２はこの発明の一実施形態に係るパワーモジュール用基板の製造方法を適用して形成したパワーモジュールを示す全体図である。
本実施形態のパワーモジュールＰにおいて、パワーモジュール用基板１０は、大別すると図１に示すように、絶縁基板１１を有する絶縁回路基板１２と，この絶縁回路基板１２の一方の表面側に設けられた放熱体１３とを備えている。
【００１７】
絶縁回路基板１２は、例えばＡｌＮ，Ａｌ２Ｏ３，Ｓｉ３Ｎ４，ＳｉＣにより所望の大きさに形成された絶縁基板１１を備え、この絶縁基板１１の一方の表面１１ａに金属層１４が、他方の表面１１ｂに回路層１５がそれぞれ、はんだまたはろう付けにより積層接合された構成となっている。金属層１４及び回路層１５は、純Ａｌ，Ａｌ合金,純Ｃｕ,またはＣｕ合金により形成され、金属層１４は例えば厚さ０．６ｍｍで、回路層１５は例えば厚さ０．４ｍｍでそれぞれ形成されている。また、絶縁回路基板１２表面の略中央部には、これを貫通する孔３１が１個形成されている。
【００１８】
放熱体１３は、純Ａｌ，Ａｌ合金，純Ｃｕ，またはＣｕ合金により形成され、好ましくは、純度９９．５％以上のＡｌ合金または純度９９．９％以上の高純度Ｃｕにより形成され、絶縁回路基板１２との当接面１３ａの略中央部に、雌ネジ部３２が１個形成されている。
以上のように構成された放熱体１３の当接面１３ａに、絶縁回路基板１２は、この基板１２の孔３１に貫装されたネジ３３が放熱体１３の雌ネジ部３２と締結されることにより、放熱体１３の当接面１３ａと金属層１４表面とが圧接した状態で保持され、パワーモジュール用基板１０が構成されている。
また、このように構成されたパワーモジュール用基板１０において、絶縁回路基板１２の回路層１５表面にはんだ１６を介して半導体チップ３０が接合されることにより、パワーモジュールＰが構成されている。
【００１９】
以上のように構成されたパワーモジュール１０を形成するパワーモジュールの製造方法について説明する。
まず、絶縁基板１１の一方の表面１１ａに金属層１４を，他方の表面１１ｂに回路層１５を各々、はんだまたはろう付けにより積層接合する。ここで、金属層１４は例えば厚さ０．６ｍｍで、回路層１５は例えば厚さ０．４ｍｍで各々形成されているので、これらを絶縁基板１１の両面に各別に接合し、その後これらが室温まで冷却されると、この冷却過程において、金属層１４の収縮量が回路層１５の収縮量より大きくなる。従って、形成される絶縁回路基板１２は、図２に示すように、前記一方の表面１１ａ側が凹曲面状に、前記他方の表面１１ｂ側が凸曲面状に各々反った状態で形成されることになる。
【００２０】
この際、絶縁回路基板１２の前記他方の表面１１ｂ側の表面（以下、「絶縁回路基板１２の他方の表面」という）における略中央部が、前記凸曲面状の頂部，すなわち最突出部１２ａとなる。
次に、この最突出部１２ａに絶縁回路基板１２を貫通する孔３１を穿設した後、絶縁回路基板１２の回路層１５表面にはんだ１６を介して半導体チップ３０を接合する。ここで、本実施形態においては、半導体チップ３０は、孔３１を回避するように、孔３１から略等間隔で２個接合する。
【００２１】
次に、絶縁回路基板１２の金属層１４表面にグリースを塗布した後、この絶縁回路基板１２を放熱体１３の当接面１３ａ上に、金属層１４表面が放熱体１３の当接面１３ａと向き合うように載置する。そして、絶縁回路基板１２の孔３１にネジ３３を貫装するとともに、このネジ３３を放熱体１３の雌ネジ部３２と締結することにより、絶縁回路基板１２の最突出部１２ａを押圧し、放熱体１３の当接面１３ａと，絶縁回路基板１２の金属層１４とを圧接させ、放熱体１３に絶縁回路基板１２を保持する。これにより、図１に示すパワーモジュールＰが形成される。
【００２２】
以上説明したように、本実施形態によるパワーモジュールＰによれば、絶縁回路基板１２を前記のように反らせて形成し、その後、この絶縁回路基板１２の前記一方の表面側１１ａを放熱体１３の当接面１３ａと向き合うように載置した後に、この絶縁回路基板１２の最突出部１２ａを押圧して、放熱体１３の当接面１３ａと絶縁回路基板１２の金属層１４表面とを圧接させることにより、放熱体１３に絶縁回路基板１２を保持するので、絶縁回路基板１２を反った状態から平坦にするのに要する力が、絶縁回路基板１２から放熱体１３の当接面１３ａに付与されることになる。従って、この絶縁回路基板１２と前記当接面１３ａとの間に高い面圧を実現することができるので、絶縁回路基板１２の周縁部を上下面及び端面の３面から拘束しなくても、絶縁回路基板１２の放熱体１３の当接面１３ａ表面に沿った位置ずれ発生や放熱効果の低下発生を確実に抑制することができる。
【００２３】
さらに、絶縁回路基板１２の周縁部の端面を拘束する必要がないことから、絶縁回路基板１２の回路層１５表面に接合された半導体チップ３０が、使用時に発熱することにより、パワーモジュールＰ全体が高温となり、絶縁回路基板１２に熱膨張係数の差に起因して反りが発生しようとした場合においても、この変形は、絶縁回路基板１２が放熱体１３の当接面１３ａに沿った方向に伸縮することに費やされることになる。従って、使用時における半導体チップ３０の発熱に起因して高負荷を受ける部位を、このパワーモジュールＰが有さない構成を実現することができ、絶縁回路基板１２の放熱体１３への良好な保持状態を長期に渡って維持することができる。
【００２４】
また、最突出部１２ａが絶縁回路基板１２表面における略中央部に形成されているので、絶縁回路基板１２を反った状態から平坦にするのに要する力が、この絶縁回路基板１２の金属層１４表面全体から放熱体１３の当接面１３ａに付与されることになる。従って、絶縁回路基板１２の金属層１４表面と放熱体１３の当接面１３ａとの間に、高い面圧が全域に渡って実現されることになり、前記作用効果をより確実に実現することができる。
【００２５】
さらに、金属層１４を例えば厚さ０．６ｍｍで、回路層１５を例えば厚さ０．４ｍｍで各々形成し、金属層１４の厚さを回路層１５の厚さより厚くしているので、これらを絶縁基板１１の両面に各別に接合し、その後これらが室温まで冷却されると、この冷却過程において、金属層１４の収縮量が回路層１５の収縮量より大きくなるので、絶縁回路基板１２を、前記一方の表面１１ａ側を凹曲面状に、前記他方の表面１１ｂ側を凸曲面状に各々反った状態で容易かつ確実に形成することができる。
【００２６】
また、絶縁回路基板１２の放熱体１３への保持を１個のネジ３３により行っているので、絶縁回路基板１２表面における締結部材としてのネジ３３の占有面積の狭小化を図ることができ、パワーモジュールＰの小型化，軽量化を図ることもできる。さらに、絶縁回路基板１２の放熱体１３への取付け工数の低下を図ることもできる。
【００２７】
なお、本発明は前記実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。例えば、本実施形態においては、絶縁回路基板１２の最突出部１２ａを、前記他方の表面１１ｂ側の表面の略中央部に形成したが、これに限らない。また、この最突出部１２ａを押圧する手段として、ネジ３３を放熱体１３の雌ネジ部３２と締結することにより行ったが、ネジ３３をピンとし雌ネジ部３２を孔として、ピンを孔に嵌合した構成としてもよい。さらに、絶縁回路基板１２の放熱体１３への保持を１個のネジ３３により行ったが、これ以上の個数でもよい。
【００２８】
【発明の効果】
以上説明したように、本発明に係るパワーモジュール用基板の製造方法によれば、絶縁回路基板と放熱体表面との間に高い面圧を実現することができるので、絶縁回路基板の周縁部を上下面及び端面の３面から拘束しなくても、絶縁回路基板の放熱体表面に沿った位置ずれ発生や放熱効果の低下発生を確実に抑制することができる。さらに、使用時における半導体チップの発熱に起因して高負荷を受ける部位を、このパワーモジュール用基板が有さない構成を実現することができ、絶縁回路基板の良好な保持状態を長期に渡って維持することができる。
【図面の簡単な説明】
【図１】 この発明の一実施形態に係るパワーモジュール用基板の製造方法を適用して形成したパワーモジュールを示す全体図である。
【図２】 図１に示すパワーモジュールを形成する方法を示した示した説明図である。
【符号の説明】
１０ パワーモジュール用基板
１１ 絶縁基板
１１ａ 絶縁基板の一方の表面
１１ｂ 絶縁基板の他方の表面
１２ 絶縁回路基板
１２ａ 最突出部
１３ 放熱体
１３ａ 当接面（放熱体表面）
１４ 金属層
１５ 回路層
３０ 半導体チップ
３１ 孔
３３ ネジ（締結部材）
Ｐ パワーモジュール[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a power module substrate used in a semiconductor device that controls a large voltage and a large current.
[0002]
[Prior art]
In general, this type of power module substrate includes an insulating circuit substrate in which a metal layer is laminated on one surface of an insulating substrate made of a ceramic material and a circuit layer is laminated and bonded to the other surface. The substrate is configured to be held on the surface of the radiator via a metal layer. Conventionally, the insulating circuit board is held on the surface of the heat sink by screwing the case and the heat dissipating body, which are disposed so as to cover the peripheral edge of the insulating circuit board. It was restrained from the three surfaces of the upper and lower surfaces and the end surface (see, for example, Patent Document 1).
[0003]
However, in the conventional power module substrate, the heat generated by the semiconductor chip bonded to the surface of the circuit layer of the insulating circuit substrate causes the insulating circuit substrate to warp due to the difference in thermal expansion coefficient. Since the case is constrained from the three surfaces of the upper and lower surfaces and the end surface, there is a problem in that a gap is generated between the insulating circuit board and the heat radiating body, and a good heat radiating effect cannot be achieved.
In addition, due to the occurrence of warping of the insulating circuit board, a large load may act on the case and a screw for fixing the case and the radiator, and the case and the screw may be damaged. In some cases, the substrate could not be held on the surface of the radiator.
[0004]
[Patent Document 1]
Japanese Patent Laid-Open No. 2001-127238
[Problems to be solved by the invention]
The present invention has been made in view of such circumstances, and an object of the present invention is to provide a method for manufacturing a power module substrate capable of maintaining the insulation circuit substrate on the heat radiating member surface for a long period of time. To do.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, the present invention proposes the following means.
The invention according to claim 1 is an insulating circuit board in which a metal layer is bonded to one surface of an insulating substrate and a circuit layer is bonded to the other surface, and a radiator provided on one surface side of the insulating circuit board. A method for manufacturing a power module substrate comprising: the insulating circuit substrate having one surface warped so as to form a concave curved surface by making the metal layer thicker than the circuit layer. An insulating circuit board forming step for forming the insulating circuit board, and placing the insulating circuit board so that the one surface faces the surface of the heat radiating body, pressing an outermost protruding portion on the other surface, And an assembling step of pressing and holding the one surface of the insulating circuit board.
[0007]
According to a second aspect of the present invention, in the method for manufacturing a power module substrate according to the first aspect, in the insulating circuit board forming step, the most protruding portion of the other surface of the insulating circuit board is formed on the other surface. It is characterized by being formed in a substantially central part.
[0008]
The invention according to claim 3 is the method for manufacturing a power module substrate according to claim 1 or 2, wherein the insulating circuit substrate forming step includes pure Al, Al alloy, pure Cu, and the like on the other surface of the insulating substrate. Alternatively, a circuit layer made of a Cu alloy is joined to one surface by solder joining or brazing, respectively, with a metal layer made of pure Al, Al alloy, pure Cu, or Cu alloy thicker than the thickness of the circuit layer. And
[0009]
According to a fourth aspect of the present invention, in the method for manufacturing a power module substrate according to any one of the first to third aspects, the insulating circuit board forming step is performed on the most protruding portion of the surface of the insulating circuit board. The assembly step includes pressing a fastening member through the hole and fastening the fastening member to the heat dissipating member to press the most protruding portion of the insulated circuit board. The heat dissipating member surface and the one surface of the insulated circuit board are pressed and held.
[0012]
According to the method for manufacturing a power module substrate according to these inventions , the insulating circuit board is warped as described above, and thereafter, the one surface of the insulating circuit board is placed so as to face the radiator surface. After that, the most protruding portion on the other surface of the insulated circuit board is pressed to press the heat sink surface and the one surface of the insulated circuit board, thereby holding the insulated circuit board on the heat sink surface. Therefore, the force required to flatten the insulated circuit board from the warped state is applied from the insulated circuit board to the surface of the radiator.
Therefore, since a high surface pressure is realized between the insulating circuit board and the surface of the heat radiating body, the heat radiating body of the insulating circuit board can be obtained without restricting the peripheral edge of the insulating circuit board from the upper and lower surfaces and the end surface. Generation of misalignment along the surface and reduction in heat dissipation effect can be reliably suppressed.
[0013]
Furthermore, since it is not necessary to constrain the end face of the peripheral portion of the insulated circuit board, the semiconductor chip bonded to the other surface of the insulated circuit board generates heat during use, and the entire power module board becomes hot. Even when the insulation circuit board is warped due to a difference in thermal expansion coefficient, this deformation is consumed when the insulation circuit board expands and contracts in the direction along the surface of the radiator. . Therefore, it is possible to realize a configuration in which the power module substrate does not have a portion subjected to a high load due to heat generation of the semiconductor chip during use, and a good holding state of the insulating circuit substrate on the surface of the radiator Can be maintained for a long time.
[0014]
In particular, according to the method for manufacturing a power module substrate of claim 2, since the most protruding portion is formed at a substantially central portion on the surface of the insulating circuit substrate, the insulating circuit substrate can be flattened from a warped state. The required force is applied to the surface of the heat radiating body from the entire one surface of the insulated circuit board. Therefore, a high surface pressure is realized over the entire area between the one surface of the insulating circuit board and the surface of the radiator.
[0015]
In particular, according to the method for manufacturing a power module substrate of claim 3, since the thickness of the metal layer is made larger than the thickness of the circuit layer, they are separately soldered or brazed on both sides of the insulating substrate. When they are joined together and then cooled to room temperature, the shrinkage amount of the metal layer becomes larger than the shrinkage amount of the circuit layer in this cooling process. Accordingly, the formed insulating circuit board is surely formed with the one surface side warped in a concave curved surface and the other surface side warped in a convex curved surface.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings. 1 and 2 are general views showing a power module formed by applying a method for manufacturing a power module substrate according to an embodiment of the present invention.
In the power module P of the present embodiment, the power module substrate 10 is roughly provided as shown in FIG. 1 on an insulating circuit substrate 12 having an insulating substrate 11 and one surface side of the insulating circuit substrate 12. And a radiator 13.
[0017]
The insulated circuit board 12 includes an insulated substrate 11 formed to have a desired size by, for example, AlN, Al2O3, Si3N4, or SiC, and a metal layer 14 is provided on one surface 11a of the insulated substrate 11 and a circuit is provided on the other surface 11b. Each of the layers 15 is laminated and joined by soldering or brazing. The metal layer 14 and the circuit layer 15 are formed of pure Al, Al alloy, pure Cu, or Cu alloy. The metal layer 14 is formed with a thickness of, for example, 0.6 mm, and the circuit layer 15 is formed with a thickness of, for example, 0.4 mm. Has been. In addition, one hole 31 is formed in a substantially central portion of the surface of the insulating circuit board 12 so as to penetrate the insulating circuit board 12.
[0018]
The radiator 13 is made of pure Al, Al alloy, pure Cu, or Cu alloy, and preferably made of Al alloy having a purity of 99.5% or higher or high-purity Cu having a purity of 99.9% or higher. One female screw portion 32 is formed at a substantially central portion of the contact surface 13 a with the substrate 12.
The insulating circuit board 12 has the screw 33 inserted in the hole 31 of the board 12 fastened to the female screw part 32 of the heat sink 13 on the contact surface 13a of the heat sink 13 configured as described above. As a result, the contact surface 13a of the radiator 13 and the surface of the metal layer 14 are held in pressure contact, and the power module substrate 10 is configured.
In the power module substrate 10 configured as described above, the power module P is configured by bonding the semiconductor chip 30 to the surface of the circuit layer 15 of the insulating circuit substrate 12 via the solder 16.
[0019]
A method for manufacturing a power module that forms the power module 10 configured as described above will be described.
First, the metal layer 14 is laminated on one surface 11a of the insulating substrate 11, and the circuit layer 15 is laminated and bonded to the other surface 11b by soldering or brazing. Here, the metal layer 14 is formed with a thickness of, for example, 0.6 mm, and the circuit layer 15 is formed with a thickness of, for example, 0.4 mm. In this cooling process, the shrinkage amount of the metal layer 14 becomes larger than the shrinkage amount of the circuit layer 15. Accordingly, as shown in FIG. 2, the insulating circuit board 12 to be formed is formed in a state where the one surface 11a side is warped in a concave curved surface and the other surface 11b side is warped in a convex curved surface. .
[0020]
At this time, the substantially central portion of the surface on the other surface 11b side of the insulating circuit board 12 (hereinafter referred to as “the other surface of the insulating circuit board 12”) is the top of the convex curved surface, that is, the most protruding portion 12a. Become.
Next, after a hole 31 penetrating the insulating circuit board 12 is formed in the most protruding portion 12a, the semiconductor chip 30 is joined to the surface of the circuit layer 15 of the insulating circuit board 12 via the solder 16. Here, in this embodiment, two semiconductor chips 30 are joined from the hole 31 at substantially equal intervals so as to avoid the hole 31.
[0021]
Next, after applying grease to the surface of the metal layer 14 of the insulating circuit board 12, the insulating circuit board 12 is placed on the contact surface 13 a of the radiator 13, and the surface of the metal layer 14 is in contact with the contact surface 13 a of the radiator 13. Place them face to face. The screw 33 is inserted into the hole 31 of the insulating circuit board 12 and the screw 33 is fastened to the female screw part 32 of the heat dissipating body 13, thereby pressing the outermost protruding part 12 a of the insulating circuit board 12 to dissipate heat. The contact surface 13 a of the body 13 and the metal layer 14 of the insulated circuit board 12 are pressed into contact with each other, and the insulated circuit board 12 is held on the radiator 13. Thereby, the power module P shown in FIG. 1 is formed.
[0022]
As described above, according to the power module P according to the present embodiment, the insulating circuit board 12 is formed by warping as described above, and then the one surface side 11a of the insulating circuit board 12 is formed on the radiator 13. After being placed so as to face the contact surface 13a, the most projecting portion 12a of the insulating circuit board 12 is pressed so that the contact surface 13a of the radiator 13 and the surface of the metal layer 14 of the insulating circuit board 12 are pressed. As a result, the insulating circuit board 12 is held on the heat radiating body 13, so that the force required to flatten the insulating circuit board 12 from the warped state is applied from the insulating circuit board 12 to the contact surface 13 a of the heat radiating body 13. Will be. Therefore, since a high surface pressure can be realized between the insulating circuit board 12 and the contact surface 13a, the peripheral edge of the insulating circuit board 12 is not restricted from the three surfaces of the upper and lower surfaces and the end surface. Generation | occurrence | production of position shift along the contact surface 13a surface of the heat sink 13 of the insulated circuit board 12 and the fall generation | occurrence | production of a heat dissipation effect can be suppressed reliably.
[0023]
Furthermore, since it is not necessary to constrain the end face of the peripheral portion of the insulating circuit board 12, the semiconductor chip 30 bonded to the surface of the circuit layer 15 of the insulating circuit board 12 generates heat during use, so that the entire power module P is Even when the insulation circuit board 12 is warped due to a difference in thermal expansion coefficient due to a high temperature, this deformation causes the insulation circuit board 12 to expand and contract in the direction along the contact surface 13a of the radiator 13. Will be spent on doing. Therefore, it is possible to realize a configuration in which the power module P does not have a portion that receives a high load due to heat generation of the semiconductor chip 30 during use, and the insulating circuit board 12 can be favorably held on the radiator 13. The state can be maintained for a long time.
[0024]
Further, since the most projecting portion 12a is formed at a substantially central portion on the surface of the insulated circuit board 12, the force required to flatten the insulated circuit board 12 from the warped state is the metal layer 14 of the insulated circuit board 12. The entire surface is applied to the contact surface 13a of the radiator 13. Therefore, a high surface pressure is realized over the entire area between the surface of the metal layer 14 of the insulating circuit board 12 and the contact surface 13a of the heat radiating body 13, and the above-described effects can be more reliably realized. Can do.
[0025]
Furthermore, the metal layer 14 is formed with a thickness of 0.6 mm, for example, and the circuit layer 15 is formed with a thickness of 0.4 mm, for example, and the thickness of the metal layer 14 is larger than the thickness of the circuit layer 15. When they are separately bonded to both surfaces of the insulating substrate 11 and then cooled to room temperature, the shrinkage amount of the metal layer 14 becomes larger than the shrinkage amount of the circuit layer 15 in this cooling process. It is possible to easily and reliably form the one surface 11a side in a curved shape and the other surface 11b side in a curved shape.
[0026]
In addition, since the insulating circuit board 12 is held on the radiator 13 by the single screw 33, the area occupied by the screw 33 as a fastening member on the surface of the insulating circuit board 12 can be reduced, and the power can be reduced. The module P can be reduced in size and weight. Further, it is possible to reduce the man-hours for attaching the insulating circuit board 12 to the radiator 13.
[0027]
In addition, this invention is not limited to the said embodiment, A various change can be added in the range which does not deviate from the meaning of this invention. For example, in the present embodiment, the most protruding portion 12a of the insulating circuit board 12 is formed at the substantially central portion of the surface on the other surface 11b side, but this is not restrictive. Further, as a means for pressing the most projecting portion 12a, the screw 33 is fastened to the female screw portion 32 of the radiator 13. However, the screw 33 is used as a pin, the female screw portion 32 is used as a hole, and the pin is used as a hole. It is good also as a structure which fitted. Further, the insulating circuit board 12 is held on the heat radiator 13 by one screw 33, but the number may be larger than this.
[0028]
【The invention's effect】
As described above , according to the method for manufacturing a power module substrate according to the present invention, a high surface pressure can be realized between the insulating circuit substrate and the radiator surface. Even without restraining from the three surfaces of the upper and lower surfaces and the end surface, it is possible to reliably suppress the occurrence of misalignment along the radiator surface of the insulated circuit board and the decrease in the heat dissipation effect. Furthermore, it is possible to realize a configuration in which the power module substrate does not have a portion that receives a high load due to heat generation of the semiconductor chip during use, and a good holding state of the insulating circuit substrate can be achieved over a long period of time. Can be maintained.
[Brief description of the drawings]
FIG. 1 is an overall view showing a power module formed by applying a method for manufacturing a power module substrate according to an embodiment of the present invention.
FIG. 2 is an explanatory view showing a method for forming the power module shown in FIG. 1;
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Power module board | substrate 11 Insulation board | substrate 11a One surface 11b of an insulation board | substrate The other surface 12 of an insulation board | substrate 12 Insulation circuit board 12a The most protruding part 13 Radiator 13a Contact surface (heat radiator surface)
14 Metal layer 15 Circuit layer 30 Semiconductor chip 31 Hole 33 Screw (fastening member)
P power module

Claims (4)

絶縁基板の一方の表面に金属層を接合し、他方の表面に回路層を接合した絶縁回路基板と，該絶縁回路基板の一方の表面側に設けられた放熱体とを備えたパワーモジュール用基板の製造方法であって、
前記金属層の厚さを前記回路層の厚さより厚くすることによって、一方の表面が凹曲面状をなすように反った前記絶縁回路基板を形成する絶縁回路基板形成工程と、
前記絶縁回路基板を前記一方の表面が前記放熱体表面と向き合うように載置して、前記他方の表面における最突出部分を押圧し、前記放熱体表面と前記絶縁回路基板の前記一方の表面とを圧接、保持する組付け工程とを有することを特徴とするパワーモジュール用基板の製造方法。A power module substrate comprising: an insulating circuit substrate having a metal layer bonded to one surface of the insulating substrate and a circuit layer bonded to the other surface; and a radiator provided on one surface side of the insulating circuit substrate. A manufacturing method of
An insulating circuit board forming step of forming the insulating circuit board having one surface warped so as to form a concave curved surface by making the thickness of the metal layer thicker than the thickness of the circuit layer ;
The insulating circuit board is placed so that the one surface faces the surface of the heat radiating body, and the most projecting portion of the other surface is pressed, and the surface of the heat radiating body and the one surface of the insulating circuit board are A method for manufacturing a substrate for a power module, comprising: an assembling step for pressing and holding the substrate. 請求項１記載のパワーモジュール用基板の製造方法において、
前記絶縁回路基板形成工程は、前記絶縁回路基板の前記他方の表面における最突出部分を、当該他方の表面の略中央部に形成することを特徴とするパワーモジュール用基板の製造方法。In the manufacturing method of the board | substrate for power modules of Claim 1,
The method for manufacturing a power module substrate, wherein the insulating circuit board forming step forms the most protruding portion of the other surface of the insulating circuit board at a substantially central portion of the other surface. 請求項１または２に記載のパワーモジュール用基板の製造方法において、
前記絶縁回路基板形成工程は、前記絶縁基板の他方の表面に純Ａｌ，Ａｌ合金，純Ｃｕ，またはＣｕ合金からなる回路層を、一方の表面に前記回路層の厚さより厚い純Ａｌ，Ａｌ合金，純Ｃｕ，またはＣｕ合金からなる金属層をそれぞれ、はんだ接合またはろう付けにより接合することを特徴とするパワーモジュール用基板の製造方法。In the manufacturing method of the board | substrate for power modules of Claim 1 or 2,
The insulating circuit board forming step includes a circuit layer made of pure Al, Al alloy, pure Cu, or Cu alloy on the other surface of the insulating substrate, and a pure Al, Al alloy thicker than the thickness of the circuit layer on one surface. , Pure Cu, or Cu alloy metal layers are joined by soldering or brazing, respectively. 請求項１から３のいずれか一項に記載のパワーモジュール用基板の製造方法において、
前記絶縁回路基板形成工程は、前記絶縁回路基板表面の前記最突出部分にこれを貫通する孔を形成し、
前記組付け工程は、前記孔に締結部材を貫装するとともに、この締結部材を前記放熱体と締結することにより、前記絶縁回路基板の前記最突出部分を押圧し、前記放熱体表面と前記絶縁回路基板の前記一方の表面とを圧接、保持することを特徴とするパワーモジュール用基板の製造方法。In the manufacturing method of the board | substrate for power modules as described in any one of Claim 1 to 3,
In the insulating circuit board forming step, a hole penetrating the insulating circuit board surface is formed in the most protruding portion of the insulating circuit board surface;
In the assembling step, a fastening member is inserted into the hole, and the fastening member is fastened to the heat dissipating member, thereby pressing the outermost projecting portion of the insulating circuit board and insulating the surface of the heat dissipating member. A method for manufacturing a power module substrate, comprising pressing and holding the one surface of the circuit board.
JP2003078288A 2003-03-20 2003-03-20 Power module substrate manufacturing method Expired - Lifetime JP3938079B2 (en)

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