JP3915870B2 - 高分子化合物、化学増幅レジスト材料及びパターン形成方法 - Google Patents

高分子化合物、化学増幅レジスト材料及びパターン形成方法 Download PDF

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Publication number
JP3915870B2
JP3915870B2 JP2000249269A JP2000249269A JP3915870B2 JP 3915870 B2 JP3915870 B2 JP 3915870B2 JP 2000249269 A JP2000249269 A JP 2000249269A JP 2000249269 A JP2000249269 A JP 2000249269A JP 3915870 B2 JP3915870 B2 JP 3915870B2
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group
carbon atoms
derivatives
acid
bis
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Japanese (ja)
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JP2001133979A5 (enExample
JP2001133979A (ja
Inventor
畠山　　潤
裕次 原田
淳 渡辺
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2000249269A 1999-08-25 2000-08-21 高分子化合物、化学増幅レジスト材料及びパターン形成方法 Expired - Lifetime JP3915870B2 (ja)

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Application Number Priority Date Filing Date Title
JP2000249269A JP3915870B2 (ja) 1999-08-25 2000-08-21 高分子化合物、化学増幅レジスト材料及びパターン形成方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-238793 1999-08-25
JP23879399 1999-08-25
JP2000249269A JP3915870B2 (ja) 1999-08-25 2000-08-21 高分子化合物、化学増幅レジスト材料及びパターン形成方法

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JP2001133979A JP2001133979A (ja) 2001-05-18
JP2001133979A5 JP2001133979A5 (enExample) 2004-10-28
JP3915870B2 true JP3915870B2 (ja) 2007-05-16

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6461789B1 (en) * 1999-08-25 2002-10-08 Shin-Etsu Chemical Co., Ltd. Polymers, chemical amplification resist compositions and patterning process
TW588220B (en) * 2000-04-04 2004-05-21 Daikin Ind Ltd Novel fluorine-containing polymer having group reactive with acid and chemically amplifying type photo resist composition prepared by using same
WO2001096963A1 (en) 2000-06-13 2001-12-20 Asahi Glass Company, Limited Resist composition
KR20030076228A (ko) 2000-06-21 2003-09-26 아사히 가라스 가부시키가이샤 레지스트 조성물
JP4449176B2 (ja) * 2000-06-30 2010-04-14 住友化学株式会社 化学増幅型レジスト組成物
JP3945200B2 (ja) * 2001-09-27 2007-07-18 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
JP2003140345A (ja) * 2001-11-02 2003-05-14 Fuji Photo Film Co Ltd ポジ型レジスト組成物
US6723488B2 (en) * 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
KR100498464B1 (ko) * 2002-11-22 2005-07-01 삼성전자주식회사 불소 함유 감광성 폴리머, 이를 포함하는 레지스트 조성물및 레지스트 조성물을 이용한 패턴 형성 방법
JP4222850B2 (ja) 2003-02-10 2009-02-12 Ｓｐａｎｓｉｏｎ Ｊａｐａｎ株式会社 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法
JP5750476B2 (ja) * 2013-07-22 2015-07-22 東京応化工業株式会社 レジストパターン形成方法

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