JP3897420B2 - 半導体光変調装置およびその製造方法 - Google Patents

半導体光変調装置およびその製造方法 Download PDF

Info

Publication number
JP3897420B2
JP3897420B2 JP30130197A JP30130197A JP3897420B2 JP 3897420 B2 JP3897420 B2 JP 3897420B2 JP 30130197 A JP30130197 A JP 30130197A JP 30130197 A JP30130197 A JP 30130197A JP 3897420 B2 JP3897420 B2 JP 3897420B2
Authority
JP
Japan
Prior art keywords
layer
type
modulation device
conductivity type
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP30130197A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11133367A (ja
JPH11133367A5 (enExample
Inventor
光志 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP30130197A priority Critical patent/JP3897420B2/ja
Priority to US09/182,881 priority patent/US6198853B1/en
Publication of JPH11133367A publication Critical patent/JPH11133367A/ja
Publication of JPH11133367A5 publication Critical patent/JPH11133367A5/ja
Application granted granted Critical
Publication of JP3897420B2 publication Critical patent/JP3897420B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP30130197A 1997-10-31 1997-10-31 半導体光変調装置およびその製造方法 Expired - Fee Related JP3897420B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP30130197A JP3897420B2 (ja) 1997-10-31 1997-10-31 半導体光変調装置およびその製造方法
US09/182,881 US6198853B1 (en) 1997-10-31 1998-10-30 Semiconductor optical functional element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30130197A JP3897420B2 (ja) 1997-10-31 1997-10-31 半導体光変調装置およびその製造方法

Publications (3)

Publication Number Publication Date
JPH11133367A JPH11133367A (ja) 1999-05-21
JPH11133367A5 JPH11133367A5 (enExample) 2005-06-23
JP3897420B2 true JP3897420B2 (ja) 2007-03-22

Family

ID=17895200

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30130197A Expired - Fee Related JP3897420B2 (ja) 1997-10-31 1997-10-31 半導体光変調装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP3897420B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116644A (ja) * 2003-10-03 2005-04-28 Ntt Electornics Corp 半導体光電子導波路
EP2000848B1 (en) * 2003-10-03 2012-12-12 NTT Electronics Corporation Semiconductor optoelectronic waveguide
JP2007134480A (ja) * 2005-11-10 2007-05-31 Nippon Telegr & Teleph Corp <Ntt> 波長可変光源
JP2007133287A (ja) * 2005-11-14 2007-05-31 Nippon Telegr & Teleph Corp <Ntt> 波長合分波器
WO2009119145A1 (ja) * 2008-03-28 2009-10-01 日本電気株式会社 導波路型半導体光変調器及びその製造方法

Also Published As

Publication number Publication date
JPH11133367A (ja) 1999-05-21

Similar Documents

Publication Publication Date Title
US6198853B1 (en) Semiconductor optical functional element
JP5451332B2 (ja) 光半導体装置
CN100557826C (zh) 雪崩光电二极管
US6600842B2 (en) Semiconductor optical function device
CN103390680A (zh) 雪崩光电二极管及其制造方法
US8847357B2 (en) Opto-electronic device
WO2012102196A1 (ja) 半導体装置
US20030185481A1 (en) Semiconductor waveguide device
US7430229B2 (en) Opto-electronic device comprising an integrated laser and an integrated modulator and associated method of production
US6222867B1 (en) Optical semiconductor device having waveguide layers buried in an InP current blocking layer
JP2011029595A (ja) 光モジュール及び集積型半導体光素子及びその製造方法
JP3897420B2 (ja) 半導体光変調装置およびその製造方法
JPH09331110A (ja) 光半導体装置、および光半導体装置の製造方法
CN117254348A (zh) 半导体光学装置、半导体激光器和半导体光学调制器
US6947461B2 (en) Semiconductor laser device
CN101232057B (zh) 雪崩光电二极管
US6897993B2 (en) Electroabsorption modulator, modulator laser device and method for producing an electroabsorption modulator
US20030098475A1 (en) Photodiode of end face incident type
JPS61164287A (ja) 半導体レ−ザ
JP2550714B2 (ja) 高抵抗半導体層埋め込み型半導体レーザ
JPH11133367A5 (enExample)
JP3795434B2 (ja) 光変調素子
JP2605911B2 (ja) 光変調器及び光検出器
JP7552723B2 (ja) 半導体構造および半導体素子
JPH11101959A (ja) 電界吸収型光強度変調器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040930

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040930

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060718

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060815

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061013

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20061219

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20061219

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100105

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100105

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110105

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120105

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130105

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140105

Year of fee payment: 7

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees