JP3885303B2 - Manufacturing method of light emitting substrate - Google Patents
Manufacturing method of light emitting substrate Download PDFInfo
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- JP3885303B2 JP3885303B2 JP23469997A JP23469997A JP3885303B2 JP 3885303 B2 JP3885303 B2 JP 3885303B2 JP 23469997 A JP23469997 A JP 23469997A JP 23469997 A JP23469997 A JP 23469997A JP 3885303 B2 JP3885303 B2 JP 3885303B2
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- 239000000758 substrate Substances 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000463 material Substances 0.000 claims description 22
- 239000011521 glass Substances 0.000 claims description 15
- 229920005989 resin Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 238000007599 discharging Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000002243 precursor Substances 0.000 claims description 4
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 238000005192 partition Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- -1 4-tert-butylphenyl Chemical group 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 125000000319 biphenyl-4-yl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C1=C([H])C([H])=C([*])C([H])=C1[H] 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Description
【0001】
【発明の属する技術分野】
本発明は発光ディスプレイに係わり、更に詳しくは有機発光材料(以後有機EL材料という)を用いた発光ディスプレイに関する。
【0002】
【従来の技術】
近年液晶表示体がワードプロセッサー、パーソナルコンピュータ等の表示部として盛んに用いられている。この液晶表示体は非発光素子であり、明るさの点、特に反射型ディスプレイで用いるとき問題となる。ここへきて薄型、軽量の特徴を有する有機EL材料を用いた発光ディスプレイが注目されている。
【0003】
この発光ディスプレイの断面図を図1に示す。図において1はアルミニウム電極を、2は有機EL材料を、3はITO透明電極を、4はガラス基板を、5は電源をそれどれ示す。
【0004】
図よりわかる様に透明基板がわずかに厚みを要求される他はマイクロメータのオーダーであり、非常に薄いディスプレイである。
【0005】
この発光ディスプレイの製造方法は以下の通りである。まず透明基板にスパッター法、又は蒸着法等によりITO透明電極を作製する。しかる後、ホトリソグラフィー法等により所望の形状の電極を形成する。更に、この基板状にスピンコート法、蒸着法等により有機EL材料を成膜し発光層とする。更にこの上に仕事関数の低い金属、例えば、マグネシウム、カルシウム、アルミニウム、リチウム、銀、あるいはこられ金属の合金を蒸着法、スパッター法等により成膜することにより対向電極とする。
【0006】
以上が基本の工程であるが、発光効率を上げるために、更に透明電極と発光層の間にホール輸送層、例えば、N,N‘−ジフェニル−N,N’−(2,4−ジメチルフェニル)−1,1‘−ビフェニル−4,4’ジアミン層を設けてもよい。また発光層と対向電極の間に電子輸送層、例えば2−(4−ビフェニル)−5−(4−tert−ブチルフェニル)−1,3,4−オキシジアゾール層を設けてもよい。
【0007】
この対向する電極間に電界を印可することにより発光させることが出来る。この発光ディスプレイの特徴として、10ボルト以下の電圧で駆動できることがある。この有機EL材料を用いた発光ディスプレイは将来有望な技術であるが、フルカラー化をねらう場合問題があった。即ち、赤、緑、青をどのように別々に区分けするかが問題であった。。しかしここへきてリソグライフィー法等により電極上に発光層を仕切る土手を形成し、その土手内に吐出装置を用い赤、緑、青の有機EL材を溶解した溶液を吐出し、吐出後溶媒を乾燥除去し、発光層とする方法が注目されている。
【0008】
【発明が解決しようとする課題】
従来、土手はホトリソグラフィー法により形成されていた。そしてその形状は、図2、図3に示す様に矩形が一般的であった。最近、逆テーパを付け、対向電極に接する土手の鋭角を利用し、土手に一種のマスクの役割をさせて、対向電極蒸着後の電極に切れ目をいれ、短冊状に電極を作る方法が提案されている。
【0009】
尚、図2は矩形状の土手を有す、短冊上に区切られた透明電極付き基板上に有機EL材料を溶解した溶液を吐出装置により吐出する工程を示す概念図である。また、図3はマトリクス状に、TFT素子と、この素子と直結するITO透明電極とを配置した土手を有す基板上に、有機EL材料を溶解した溶液を吐出装置により吐出する工程を示す概念図である。図2、3において21、31は有機EL材料を溶解した溶液を吐出するノズルを、22、32は有機EL材料を、23、33は土手を、24、34はITO透明電極を、25、35はガラス基板を、36は絶縁層を、37はTFT素子をそれぞれ示す。
【0010】
従来の土手はこれらの図に示す様に、矩形であるか、透明電極に接する辺の方が短い、すなわち逆テーパを有する形状であった。そのため、発光部分に対して有機EL材を打ち込む面積が狭くなる欠点が有る。このため吐出装置による赤、緑、青をうち分けることが困難になる欠点があった。
【0011】
本発明はこの様な課題を解決するためになされたもので、その目的は吐出装置による有機EL材料を困難を伴うこと無く吐出でき、発光層間の交じり合いの無い、良好な発光ディスプレイを提供するためになされたものである。
【0012】
【課題を解決するための手段】
上記課題を解決するために、本発明による発光基板の製造方法は、基板上に、第1電極と、発光層と、第2電極とが、この順に形成され、かつ、該発光層を仕切る土手とを有する発光基板の製造方法であって、底辺が対辺より長い断面形状である土手を有する金属型を用い、樹脂型を形成する工程と、前記基板と前記樹脂型とを接触させる工程と、前記基板と前記樹脂型との間に形成される空間にガラス前駆体を進入させて固化し、前記基板上に透明電極側に接する辺が対辺より長くなる断面形状となるよう前記土手を形成する工程と、前記土手で仕切られた領域に、有機EL材料を溶解した溶液をインクジェットプリンティング装置により吐出して前記発光層を形成する工程と、を備えることを特徴とする。
【0013】
この様な土手を形成することにより発光面積に比べて、比較的大きく開いた、有機EL材料を受け止める部分を形成できる。そのため吐出装置の振れのマージンも大きくなる。
【0014】
【発明の実施の形態】
以下実施例により詳しく説明する。
【0015】
(実施例1)
ITO電極幅40マイクロメータ、電極間10マイクロメータで配置された短冊状電極付きガラス基板に非感光性ポリイミドSE−812(日産化学製)を、回転速度2000rpm、回転時間20秒の条件でスピンコートした。この基板を80度C30分間プレベークした後、マスクをし、露光した。露光後、エッチングを行い、160度Cで30分間ポストベークをし、図4に示す土手付き基板を得た。図において41は土手を、42はITO透明電極を、43はガラス基板を示す。この基板に赤、緑、青の有機EL材を溶解する溶液をディスペンサにより吐出した。最後にMg/Ag(1:10)合金を蒸着し、透明電極に直交するように電極を形成し、対向電極とした。
【0016】
このようにして得た発光ディスプレイをマトリクス駆動した。
【0017】
(実施例2)
図5に示す土手の形状を有す金属型と、シリコン樹脂(東芝シリコーン製)を用いシリコン樹脂型を作成した。この型をTFT素子とこのTFT素子に直結したITO透明電極がマトリクス上に形成されたガラス基板に密着させ、この型の回りにガラス前駆体(ETSBー7000、テー・エス・ビー開発センター製)を設置し、シリコン樹脂型と基板の形成する空間にガラス前駆体を室温で進入させた。進入が完結したところで室温に放置し固化させた、固化したところでシリコン樹脂型を取り外し、200度Cで2時間焼成し、図6に示すような土手付き基板を得た。図において61は土手を、62はITO透明電極を、63はガラス基板を、64は絶縁層を、65はTFT素子をそれぞれ示す。この基板の土手の間にインクジェットプリンティング装置を用い、赤、緑、青の有機EL材料を溶かした溶液を吐出した。その後、乾燥、溶媒除去してから、リチウム2%入りアルミニウムをスパッター法によりスパッタして対向電極とした。
【0018】
【発明の効果】
以上述べたように本発明の発光ディスプレイは、吐出装置を用い効率よく、各色の発光層間の混ざりもなく製造できる。
【図面の簡単な説明】
【図1】発光ディスプレイの断面図。
【図2】短冊状の電極を有す発光ディスプレイの製造工程を示す概念図。
【図3】マトリクス状にTFT素子とITO電極を有す発光ディスプレイの製造工程を示す概念図。
【図4】本発明の発光ディスプレイの土手の形状を示す断面図。
【図5】本発明の発光ディスプレイの土手の形成するシリコン樹脂型とシリコン樹脂型を形成する金型を示す断面図。
【図6】本発明の発光ディスプレイの土手の形状を示す断面図。
【符号の説明】
1.アルミニウム電極
2.有機EL材料
3.ITO透明電極
4.ガラス基板
5.電源
21.ノズル
22.有機EL材料
23.土手
24.ITO透明電極
25.ガラス基板
31.ノズル
32.有機EL材料
33.土手
34.ITO透明電極
35.ガラス基板
36.絶縁層
37.TFT素子
41.土手
42.ITO透明電極
43.ガラス基板
51.金型
52.シリコン樹脂型
61.土手
62.ITO透明電極
63.ガラス基板
64.絶縁層
65.TFT素子[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a light-emitting display, and more particularly to a light-emitting display using an organic light-emitting material (hereinafter referred to as an organic EL material).
[0002]
[Prior art]
In recent years, liquid crystal displays have been actively used as display units for word processors, personal computers, and the like. This liquid crystal display is a non-light-emitting element, which causes a problem in terms of brightness, particularly when used in a reflective display. A light emitting display using an organic EL material having thin and light features has been attracting attention.
[0003]
A cross-sectional view of this light emitting display is shown in FIG. In the figure, 1 indicates an aluminum electrode, 2 indicates an organic EL material, 3 indicates an ITO transparent electrode, 4 indicates a glass substrate, and 5 indicates a power source.
[0004]
As can be seen from the figure, the transparent substrate is in the order of micrometers, except that a slight thickness is required, which is a very thin display.
[0005]
The manufacturing method of this light emitting display is as follows. First, an ITO transparent electrode is produced on a transparent substrate by a sputtering method or a vapor deposition method. Thereafter, an electrode having a desired shape is formed by a photolithography method or the like. Further, an organic EL material is formed on the substrate by a spin coat method, a vapor deposition method, or the like to form a light emitting layer. Further, a counter work electrode is formed by depositing a metal having a low work function, for example, magnesium, calcium, aluminum, lithium, silver, or an alloy of these metals by vapor deposition or sputtering.
[0006]
The above is the basic process. In order to increase the luminous efficiency, a hole transport layer such as N, N′-diphenyl-N, N ′-(2,4-dimethylphenyl) is further provided between the transparent electrode and the light emitting layer. ) -1,1′-biphenyl-4,4′diamine layer may be provided. Further, an electron transport layer such as a 2- (4-biphenyl) -5- (4-tert-butylphenyl) -1,3,4-oxydiazole layer may be provided between the light emitting layer and the counter electrode.
[0007]
Light can be emitted by applying an electric field between the opposing electrodes. A characteristic of this light emitting display is that it can be driven at a voltage of 10 volts or less. A light emitting display using this organic EL material is a promising technology in the future, but there is a problem when aiming at full color. That is, how to separate red, green and blue separately is a problem. . However, here, a bank that partitions the light emitting layer on the electrode is formed by the lithographic method, etc., and a solution in which red, green, and blue organic EL materials are dissolved is discharged into the bank using a discharge device, and the solvent after discharge Attention has been focused on a method of removing the material by drying to form a light emitting layer.
[0008]
[Problems to be solved by the invention]
Conventionally, the bank has been formed by photolithography. The shape was generally rectangular as shown in FIGS. Recently, a method has been proposed in which a reverse taper is applied, the bank is used as a kind of mask by using the acute angle of the bank in contact with the counter electrode, the electrode after the counter electrode deposition is cut, and the electrode is made into a strip shape. ing.
[0009]
FIG. 2 is a conceptual diagram showing a step of discharging a solution in which an organic EL material is dissolved on a substrate with a transparent electrode, which has a rectangular bank and is divided into strips, using a discharge device. FIG. 3 is a conceptual diagram showing a step of discharging a solution in which an organic EL material is dissolved by a discharge device onto a substrate having a bank on which TFT elements and ITO transparent electrodes directly connected to the elements are arranged in a matrix. FIG. 2 and 3, reference numerals 21 and 31 denote nozzles for discharging a solution in which an organic EL material is dissolved, reference numerals 22 and 32 denote organic EL materials, reference numerals 23 and 33 denote banks, reference numerals 24 and 34 denote ITO transparent electrodes, and
[0010]
As shown in these drawings, the conventional bank has a rectangular shape or a shape in which the side in contact with the transparent electrode is shorter, that is, has a reverse taper. For this reason, there is a drawback that the area where the organic EL material is driven into the light emitting portion is reduced. For this reason, there is a drawback that it is difficult to separate red, green and blue by the discharge device.
[0011]
The present invention has been made to solve such problems, and an object of the present invention is to provide a good light emitting display that can discharge organic EL materials by a discharge device without difficulty and has no crossing between light emitting layers. It was made for that purpose.
[0012]
[Means for Solving the Problems]
In order to solve the above-described problems, a method for manufacturing a light emitting substrate according to the present invention includes a bank on which a first electrode, a light emitting layer, and a second electrode are formed in this order, and partitions the light emitting layer. A step of forming a resin mold using a metal mold having a bank whose cross section is longer than the opposite side, and a step of bringing the substrate and the resin mold into contact with each other. A glass precursor is allowed to enter and solidify into a space formed between the substrate and the resin mold, and the bank is formed on the substrate so that the side in contact with the transparent electrode side is longer than the opposite side. And a step of forming the light emitting layer in a region partitioned by the bank by discharging a solution in which an organic EL material is dissolved by an ink jet printing apparatus.
[0013]
By forming such a bank, it is possible to form a portion that receives the organic EL material that is relatively wide compared to the light emitting area. For this reason, the fluctuation margin of the ejection device is also increased.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Examples will be described in detail below.
[0015]
Example 1
Spin-coat non-photosensitive polyimide SE-812 (manufactured by Nissan Chemical Co., Ltd.) on a glass substrate with a strip-like electrode arranged with an ITO electrode width of 40 micrometers and an electrode distance of 10 micrometers under the conditions of a rotational speed of 2000 rpm and a rotational time of 20 seconds. did. This substrate was pre-baked at 80 ° C. for 30 minutes, then masked and exposed. After the exposure, etching was performed, and post-baking was performed at 160 ° C. for 30 minutes to obtain a banked substrate shown in FIG. In the figure, 41 indicates a bank, 42 indicates an ITO transparent electrode, and 43 indicates a glass substrate. A solution that dissolves red, green, and blue organic EL materials was discharged onto the substrate using a dispenser. Finally, an Mg / Ag (1:10) alloy was vapor-deposited, and an electrode was formed so as to be orthogonal to the transparent electrode, thereby forming a counter electrode.
[0016]
The light-emitting display thus obtained was matrix driven.
[0017]
(Example 2)
A silicon resin mold was prepared using a metal mold having a bank shape shown in FIG. 5 and a silicon resin (made by Toshiba Silicone). This mold is closely attached to a glass substrate on which a TFT element and an ITO transparent electrode directly connected to the TFT element are formed on a matrix, and a glass precursor (ETSB-7000, manufactured by TSB Development Center) is placed around this mold. The glass precursor was allowed to enter the space formed by the silicon resin mold and the substrate at room temperature. When the approach was completed, it was left to solidify at room temperature, and when it was solidified, the silicon resin mold was removed and baked at 200 ° C. for 2 hours to obtain a banked bank as shown in FIG. In the figure, 61 is a bank, 62 is an ITO transparent electrode, 63 is a glass substrate, 64 is an insulating layer, and 65 is a TFT element. An ink jet printing apparatus was used between the banks of the substrate to discharge a solution in which red, green, and blue organic EL materials were dissolved. Then, after drying and removing the solvent, aluminum containing 2% lithium was sputtered by a sputtering method to obtain a counter electrode.
[0018]
【The invention's effect】
As described above, the light-emitting display of the present invention can be manufactured efficiently using a discharge device and without mixing between the light-emitting layers of the respective colors.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a light-emitting display.
FIG. 2 is a conceptual diagram showing a manufacturing process of a light emitting display having strip-shaped electrodes.
FIG. 3 is a conceptual diagram showing a manufacturing process of a light-emitting display having TFT elements and ITO electrodes in a matrix.
FIG. 4 is a cross-sectional view showing the shape of a bank of a light emitting display according to the present invention.
FIG. 5 is a cross-sectional view showing a silicon resin mold formed on the bank of the light emitting display of the present invention and a mold forming the silicon resin mold.
FIG. 6 is a cross-sectional view showing the shape of a bank of a light emitting display according to the present invention.
[Explanation of symbols]
1. 1. Aluminum electrode 2. Organic EL material ITO transparent electrode 4. 4. Glass substrate Power supply 21. Nozzle 22. Organic EL material 23. Bank 24. ITO transparent electrode 25. Glass substrate 31. Nozzle 32. Organic EL material 33. Bank 34. ITO
Claims (1)
底辺が対辺より長い断面形状である土手を有する金属型を用い、樹脂型を形成する工程と、
前記基板と前記樹脂型とを接触させる工程と、
前記基板と前記樹脂型との間に形成される空間にガラス前駆体を進入させて固化し、前記基板上に透明電極側に接する辺が対辺より長くなる断面形状となるよう前記土手を形成する工程と、
前記土手で仕切られた領域に、有機EL材料を溶解した溶液をインクジェットプリンティング装置により吐出して前記発光層を形成する工程と、を備えることを特徴とする発光基板の製造方法。A method of manufacturing a light emitting substrate, wherein a first electrode, a light emitting layer, and a second electrode are formed on the substrate in this order and have a bank that partitions the light emitting layer,
Using a metal mold having a bank whose cross-sectional shape is longer than the opposite side, and forming a resin mold;
Contacting the substrate and the resin mold;
A glass precursor is allowed to enter and solidify into a space formed between the substrate and the resin mold, and the bank is formed on the substrate so that the side in contact with the transparent electrode side is longer than the opposite side. Process,
And a step of forming the light emitting layer in a region partitioned by the bank by discharging a solution in which an organic EL material is dissolved by an ink jet printing apparatus.
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JP23469997A JP3885303B2 (en) | 1997-08-29 | 1997-08-29 | Manufacturing method of light emitting substrate |
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JP23469997A JP3885303B2 (en) | 1997-08-29 | 1997-08-29 | Manufacturing method of light emitting substrate |
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JPH1174082A JPH1174082A (en) | 1999-03-16 |
JP3885303B2 true JP3885303B2 (en) | 2007-02-21 |
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KR100244185B1 (en) * | 1997-09-18 | 2000-02-01 | 구자홍 | Organic electroluminescence device and method for fabricating the same |
TW556357B (en) | 1999-06-28 | 2003-10-01 | Semiconductor Energy Lab | Method of manufacturing an electro-optical device |
WO2001039272A1 (en) * | 1999-11-29 | 2001-05-31 | Koninklijke Philips Electronics N.V. | Organic electroluminescent device and a method of manufacturing thereof |
JP4827294B2 (en) * | 1999-11-29 | 2011-11-30 | 株式会社半導体エネルギー研究所 | Film forming apparatus and method for manufacturing light emitting apparatus |
US6869635B2 (en) | 2000-02-25 | 2005-03-22 | Seiko Epson Corporation | Organic electroluminescence device and manufacturing method therefor |
JP4748147B2 (en) * | 2000-02-25 | 2011-08-17 | セイコーエプソン株式会社 | Organic EL device |
TW522752B (en) | 2000-10-20 | 2003-03-01 | Toshiba Corp | Self-luminous display panel and method of manufacturing the same |
JP2002231445A (en) * | 2001-01-31 | 2002-08-16 | Dainippon Printing Co Ltd | El element and method of manufacture |
CN1557020A (en) * | 2001-09-24 | 2004-12-22 | �ʼҷ����ֵ��ӹɷ�����˾ | Assembly for a thin-film optical device, organic electroluminescent display device and method of manufaturing same |
JP4425531B2 (en) * | 2002-08-21 | 2010-03-03 | 富士通株式会社 | Organic EL device and manufacturing method thereof |
KR100508002B1 (en) * | 2002-09-03 | 2005-08-17 | 엘지.필립스 엘시디 주식회사 | fabrication method of an organic electro-luminescence device using nozzle coating |
KR100489590B1 (en) * | 2002-09-19 | 2005-05-16 | 엘지.필립스 엘시디 주식회사 | Transmissive Type Organic Electroluminescent Device and method for fabricating the same |
DE10324880B4 (en) * | 2003-05-30 | 2007-04-05 | Schott Ag | Process for the preparation of OLEDs |
KR101007717B1 (en) | 2003-11-28 | 2011-01-13 | 삼성전자주식회사 | Pattern mask and display device using the same, and method of manufacturing thereof |
KR100705312B1 (en) * | 2004-03-22 | 2007-04-10 | 엘지전자 주식회사 | Organic Electro Luminescence Device And Fabricating Method Thereof |
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