JP3877945B2 - Epoxy resin composition and semiconductor sealing device - Google Patents

Description

（但し、式中Ｒ¹ ，Ｒ² ，Ｒ³ は水素原子又は炭素数１〜１０のアルキル基を表す）
（ｂ）次の一般式で示されるナフトール骨格を有するエポキシ樹脂
【化１０】

（但し、式中Ｒ¹ ，Ｒ² ，は水素原子又は炭素数１〜１０のアルキル基を、ｎは０〜１０までの整数をそれぞれ表す）
とを重量比で（ａ）成分／（ｂ）成分が０．１〜２．０の割合で含有するエポキシ樹脂、
（Ｂ）（ｃ）次の一般式で示される多官能フェノール樹脂と、
【化１１】

（但し、式中Ｒは水素原子、メチル基、エチル基、プロピル基、ブチル基およびｔ−ブチル基の中で１種もしくは２種以上の組合せを、ｎは０〜１０までの整数をそれぞれ表す）
（ｄ）次の一般式で示されるナフトール骨格を有するフェノール樹脂
【化１２】

（但し、式中Ｒ¹ ，Ｒ² ，は水素原子、メチル基、エチル基、プロピル基、ブチル基およびｔ−ブチル基の中で１種もしくは２種以上の組合せを、ｎは０〜１０までの整数をそれぞれ表す）
とを重量比で（ｃ）成分／（ｄ）成分が０．１〜２．０の割合で含有するフェノール樹脂、
（Ｃ）無機質充填剤および
（Ｄ）硬化促進剤
を必須成分とし、前記（Ｃ）無機質充填剤を樹脂組成物に対して２５〜９５重量％の割合で含有してなることを特徴とするエポキシ樹脂組成物である。また別の本発明は、このエポキシ樹脂組成物の硬化物で、半導体チップが封止された片面封止のＢＧＡ型であることを特徴とする半導体封止装置である。
【０００８】
以下、本発明を詳細に説明する。
【０００９】
本発明に用いる（Ａ）（ａ）ビスフェノールＡ骨格を有する多官能エポキシ樹脂としては、前記の一般式化９で示されたものが使用される。具体的な化合物として、例えば、
【化１３】

【化１４】

等が挙げられる。
【００１０】
本発明に用いる（Ａ）（ｂ）ナフトール骨格を有するエポキシ樹脂としては、前記の一般式化１０で示されたものが使用される。具体的な化合物として、例えば、
【化１５】

（但し、式中、ｎは１〜１０までの整数を表す）
が挙げられる。
【００１１】
（Ａ）エポキシ樹脂において、（ａ）ビスフェノールＡ骨格を有する多官能エポキシ樹脂および（ｂ）ナフトール骨格を有するエポキシ樹脂を併用することにより、高いガラス転移温度と、高流動性、高接着性を可能とすることができる。
【００１２】
本発明においては、（ａ）ビスフェノールＡ骨格を有する多官能エポキシ樹脂と、（ｂ）ナフトール骨格を有するエポキシ樹脂とを、多官能エポキシ樹脂／ナフトールエポキシ樹脂の重量比が０．１〜２．０、好ましくは０．２〜０．７の割合で使用する。重量比が０．１未満では、吸水率の増加、高粘度、接着力の低下が生じ、２．０を超えるとガラス転移温度の低下が生じる。
【００１３】
また、（ａ）多官能エポキシ樹脂および（ｂ）ナフトールエポキシ樹脂の他に、エピビス系エポキシ樹脂、臭素化エポキシ樹脂、ビフェニル型エポキシ樹脂、ノボラック型エポキシ樹脂およびこれらの変性樹脂をさらに添加することができる。この場合、（ａ）の多官能エポキシ樹脂と（ｂ）のナフトールエポキシ樹脂との合計は、エポキシ樹脂混合物全体の１０重量％以上、特に４０〜１００重量％となるように配合することが好ましい。
【００１４】
本発明に用いる（Ｂ）（ｃ）多官能フェノール樹脂としては、前記の一般式化１１で示されるものが使用される。具体的な化合物として、例えば
【化１６】

（但し、式中、ｎは０〜１０までの整数を表す）
【化１７】

（但し、式中、ｎは０〜１０までの整数を表す）
等が挙げられる。
【００１５】
本発明に用いる（Ｂ）（ｄ）ナフトール骨格を有するフェノール樹脂としては、前記の一般式化１２で示されるものが使用される。具体的な化合物として、例えば
【化１８】

（但し、式中、ｎは０〜１０までの整数を表す）
【化１９】

（但し、式中、ｎは０〜１０までの整数を表す）
等が挙げられる。
【００１６】
（Ｂ）フェノール樹脂において、（ｃ）多官能フェノール樹脂と（ｄ）ナフトール骨格を有するフェノール樹脂とを併用することにより、高いガラス転移温度と、高いガラス転移温度と、高流動性、高接着性を可能とすることができる。
【００１７】
本発明においては、（ｃ）ビスフェノールＡ骨格を有する多官能フェノール樹脂と、（ｄ）ナフトール骨格を有するフェノール樹脂とを、多官能フェノール樹脂／ナフトールフェノール樹脂の重量比が０．１〜２．０、好ましくは０．２〜０．７の割合で使用する。重量比が０．１未満では、吸水率の増加、高粘度、接着力の低下が生じ、２．０を超えるとガラス転移温度の低下が生じる。
【００１８】
本発明に用いる（Ｃ）無機質充填剤としては、一般に使用されているものが広く使用されるが、それらの中でも不純物濃度が低く、平均粒径３０μｍ以下のシリカ粉末が好ましく使用することができる。平均粒径が３０μｍを超えると耐湿性および成形性が劣り好ましくない。無機質充填剤の配合割合は、全体の樹脂組成物に対して２５〜９５重量％の割合で含有することが望ましい。その割合が２５重量％未満では、樹脂組成物の吸湿性が大きく、半田浸漬後の耐湿性に劣り、また、９５重量％を超えると極端に流動性が悪くなり、成形性に劣り好ましくない。
【００１９】
本発明に用いる（Ｄ）硬化促進剤としては、リン系硬化促進剤、イミダゾール系硬化促進剤、ＤＢＵ系硬化促進剤、その他の硬化促進剤等が広く使用される。これらは単独又は２種以上併用することができる。硬化促進剤の配合割合は、樹脂組成物に対して０．０１〜５重量％含有するように配合することが望ましい。その割合が０．０１重量％未満では樹脂組成物のゲルタイムが長く、硬化特性も悪くなり、また、５重量％を超えると極端に流動性が悪くなって成形性に劣り、さらに電気特性も悪くなり耐湿性に劣り好ましくない。
【００２０】
本発明のエポキシ樹脂組成物は、前述した特定のエポキシ樹脂、特定のフェノール樹脂、無機質充填剤および硬化促進剤を必須成分とするが、本発明の目的に反しない限度において、また必要に応じて、例えば天然ワックス類、合成ワックス類、直鎖脂肪酸の金属塩、酸アミド類、エステル類、パラフィン類等の離型剤、三酸化アンチモン等の難燃剤、カーボンブラック、ベンガラ等の着色剤、シランカップリング剤、ゴム系やシリコーン系の低応力付与剤等を適宜、添加配合することができる。
【００２１】
本発明のエポキシ樹脂組成物を成形材料として調製する場合の一般的な方法としては、前述した特定のエポキシ樹脂、特定のフェノール樹脂、無機質充填剤および硬化促進剤その他の成分を所定の組成比に選択した原料成分を配合し、ミキサー等によって十分均一に混合した後、さらに熱ロールによる溶融混合処理又はニーダ等による混合処理を行い、次いで冷却固化させ、適当な大きさに粉砕して成形材料とすることができる。こうして得られた成形材料は、半導体装置をはじめとする電子部品あるいは電気部品の封止、被覆、絶縁等に適用すれば、優れた特性と信頼性を付与させることができる。
【００２２】
本発明の半導体封止装置は、上述した成形材料を用いて、半導体チップを封止することにより容易に製造することができる。封止を行う半導体チップとしては、例えば、集積回路、大規模集積回路、トランジスタ、サイリスタ、ダイオード等で特に限定されるものではない。封止の最も一般的な方法としては、低圧トランスファー成形法があるが、射出成形、圧縮成形、注型等による封止も可能である。成形材料は封止の際に加熱して硬化させ、最終的にはこの硬化物によって封止された半導体封止装置が得られる。加熱による硬化は、１５０℃以上に加熱して硬化させることが望ましい。チップを搭載する基板としては、セラミック、プラスティック、ポリイミドフィルム、リードフレームなどであるがこれらに限定されるものではない。
【００２３】
【作用】
本発明のエポキシ樹脂組成物および半導体封止装置は、前述した特定のエポキシ樹脂と、特定のフェノール樹脂を用いたことによって、樹脂組成物の高いガラス転移温度を保持したまま、熱膨張係数を低減し、かつ高流動性を兼ね備えることによって、熱機械特性と低応力性が向上してパッケージの反りを抑え、良好な成形性であり、半田浸漬、半田リフロー後の樹脂のクラックの発生がなくなり、耐湿性劣化が少なくなるものである。
【００２４】
【実施例】
次に本発明を実施例によって具体的に説明するが、本発明はこれらの実施例によって限定されるものではない。以下の実施例及び比較例において「部」とは「重量部」を意味する。
【００２５】
実施例１
前述した化１４のエポキシ樹脂４．８部、前述した化１５のエポキシ樹脂（ｎ＝１）１．３部、化１７のフェノール樹脂（ｎ＝０）２．３部、化１９のフェノール樹脂（ｎ＝０）１．７部、溶融シリカ粉末８７部、硬化促進剤の２−メチルイミダゾール０．２部、カルナバワックス０．３部およびエポキシシランカップリング剤０．４部を常温で混合し、さらに９０〜９５℃で混練してこれを冷却粉砕して成形材料（Ａ）を製造した。
【００２６】
実施例２
実施例１で用いた化１４のエポキシ樹脂３．５部、実施例１で用いた化１５のエポキシ樹脂（ｎ＝１）２．０部、化１７のフェノール樹脂（ｎ＝０）２．０部、化１９のフェノール樹脂（ｎ＝０）２．１部、溶融シリカ粉末８７部、硬化促進剤の２−メチルイミダゾール０．２部、カルナバワックス０．３部およびエポキシシランカップリング剤０．４部を常温で混合し、さらに９０〜９５℃で混練してこれを冷却粉砕して成形材料（Ｂ）を製造した。
【００２７】
比較例１
ｏ−クレゾールノボラック型エポキシ樹脂（軟化点８０℃、エポキシ当量２００）１１部、ノボラック型フェノール樹脂（軟化点８０℃、水酸基当量１０４）３部、溶融シリカ粉末８５部、硬化促進剤の２−メチルイミダゾール０．３部、カルナバワックス０．３部およびエポキシシランカップリング剤０．４部を混合し、さらに９０〜９５℃で混練してこれを冷却粉砕して成形材料（Ｃ）を製造した。
【００２８】
比較例２
エピビス型エポキシ樹脂（エピコート８２８）１１部、ノボラック型フェノール樹脂（軟化点８０℃、水酸基当量１０４）３部、溶融シリカ粉末８５部、硬化促進剤の２−メチルイミダゾール０．３部、カルナバワックス０．３部およびエポキシシランカップリング剤０．４部を混合し、さらに９０〜９５℃で混練してこれを冷却粉砕して成形材料（Ｄ）を製造した。
【００２９】
こうして製造した成形材料（Ａ）〜（Ｄ）を用いて、１７５℃に加熱した金型内にトランスファー注入し、硬化させて半導体チップを封止して半導体封止装置を製造した。これらの半導体封止装置について、諸試験を行ったのでその結果を表１に示したが、本発明のエポキシ樹脂組成物及び半導体封止装置は、パッケージの反りが少なく、流動性、耐湿性、半田耐熱性に優れており、本発明の顕著な効果を確認することができた。
【００３０】
【表１】

＊１：トランスファー成形によって直径５０ｍｍ、厚さ３ｍｍの成形品を作り、これを１２７℃，２．５気圧の飽和水蒸気中に２４時間放置し、増加した重量によって測定した。
【００３１】
＊２：吸水率の場合と同様な成形品を作り、１７５℃で８時間の後硬化を行い、適当な大きさの試験片とし、熱機械分析装置を用いて測定した。
【００３２】
＊３：ＪＩＳ−Ｋ−６９１１に準じて試験した。
【００３３】
＊４：成形材料を用いて、２本のアルミニウム配線を有するシリコン製チップを、通常のＢＧＡ用フレームに接着し、１７５℃で２分間トランスファー成形した後、１７５℃で８時間の後硬化を行った。こうして得た成形品を１２７℃，２．５気圧の飽和水蒸気中で耐湿試験を行い、アルミニウム腐食による５０％断線（不良発生）の起こる時間を評価した。
【００３４】
＊５：１０×１０ｍｍダミーチップをＢＧＡ（３０×３０×１．２ｍｍ）パッケージに納め、成形材料を用いて、１７５℃で２分間トランスファー成形した後、１７５℃で８時間の後硬化を行った。こうして製造した半導体封止装置を３０℃，６０％，１９６時間の吸湿処理をした後、２４０℃のＩＲリフローを３０秒間行い、パッケージクラックの発生の有無を評価した。
【００３５】
＊６：１０×１０ｍｍダミーチップをＢＧＡ（３０×３０×１．２ｍｍ）パッケージに納め、成形材料を用いて、１７５℃で２分間トランスファー成形した後、１７５℃で８時間の後硬化を行った。こうして製造した半導体封止装置の反り量を非接触レーザー測定機により測定した。
【００３６】
【発明の効果】
以上の説明及び表１から明らかなように、本発明のエポキシ樹脂組成物及び半導体封止装置は、パッケージの反りが少なく、かつ、流動性が良好で、成形性に優れ、また、実装時の半田耐熱性に優れ、樹脂クラックもなく、接着性も良好であり、また、実装後の耐湿性に優れ、しかも長期間の信頼性を保証することができる。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an epoxy resin composition excellent in package warpage, moldability, and solder heat resistance, and a BGA (Ball Grid Array) type semiconductor sealing device in which a semiconductor chip is sealed with the composition. .
[0002]
[Prior art]
In recent years, in the field of semiconductor integrated circuits, the size and the number of poles have increased along with the higher integration of chips, while the demand for smaller and lighter package dimensions has become stronger, especially for portable information communication devices. . For this reason, in QFP (Quad Flat Package) in which leads are arranged in the periphery, the narrowing of pitch accompanying the increase in the number of electrodes is accelerated, and the current 0.3 mm electrode pitch reaches the limit of batch reflow soldering.
[0003]
Therefore, the movement to make the soldering easier by shifting the lead to the BGA type with the leads arranged in an area array on the bottom of the package has been active mainly in the United States from several years ago. It has become.
[0004]
However, since the BGA type package is sealed on one side, the package warps greatly when sealed with a resin composition comprising a conventional epoxy resin such as a novolac epoxy resin, a novolac phenol resin, and silica powder. There were drawbacks. In addition, due to the long loop of the bonding wire, there is a drawback that a wire flow occurs during molding.
[0005]
[Problems to be solved by the invention]
The present invention has been made to eliminate the above-described drawbacks, and has low package warpage, good fluidity, excellent moldability, excellent solder heat resistance during mounting, and no resin cracks. It is an object of the present invention to provide an epoxy resin composition and a semiconductor encapsulating apparatus that do not generate, have good adhesion, have excellent moisture resistance after mounting, and can guarantee long-term reliability.
[0006]
[Means for Solving the Problems]
As a result of intensive studies to achieve the above-mentioned object, the present inventor uses a specific epoxy resin and a specific phenol resin, so that there is little warping of the package, good fluidity, and good moldability. The present invention was completed by finding that the resin composition was excellent, excellent in solder heat resistance during mounting, no resin cracks were generated, and had good adhesiveness and excellent moisture resistance after mounting. Is.
[0007]
That is, the present invention
(A) (a) a polyfunctional epoxy resin having a bisphenol A skeleton represented by the following general formula;
[Chemical 9]

(In the formula, R ¹ , R ² and R ³ represent a hydrogen atom or an alkyl group having 1 to 10 carbon atoms)
(B) Epoxy resin having a naphthol skeleton represented by the following general formula:

(In the formula, R ¹ and R ² represent a hydrogen atom or an alkyl group having 1 to 10 carbon atoms, and n represents an integer of 0 to 10)
An epoxy resin containing (a) component / (b) component in a ratio of 0.1 to 2.0 by weight ratio,
(B) (c) a polyfunctional phenol resin represented by the following general formula;
Embedded image

(In the formula, R represents one or a combination of two or more of hydrogen atom, methyl group, ethyl group, propyl group, butyl group and t-butyl group, and n represents an integer of 0 to 10, respectively. )
(D) a phenol resin having a naphthol skeleton represented by the following general formula:

(In the formula, R ¹ and R ² are a hydrogen atom, a methyl group, an ethyl group, a propyl group, a butyl group, and a t-butyl group, and n is 0 to 10) Each represents an integer)
A phenol resin containing (c) component / (d) component in a ratio of 0.1 to 2.0 by weight ratio,
An epoxy comprising (C) an inorganic filler and (D) a curing accelerator as essential components, and containing (C) the inorganic filler in a proportion of 25 to 95% by weight based on the resin composition. It is a resin composition. Another aspect of the present invention is a semiconductor sealing device characterized in that it is a one-side sealed BGA type in which a semiconductor chip is sealed with a cured product of this epoxy resin composition.
[0008]
Hereinafter, the present invention will be described in detail.
[0009]
As the polyfunctional epoxy resin having (A) (a) bisphenol A skeleton used in the present invention, those represented by the above general formula 9 are used. As a specific compound, for example,
Embedded image

Embedded image

Etc.
[0010]
As the epoxy resin (A) (b) having a naphthol skeleton used in the present invention, those represented by the above general formula 10 are used. As a specific compound, for example,
Embedded image

(In the formula, n represents an integer of 1 to 10)
Is mentioned.
[0011]
(A) In epoxy resin, (a) Polyfunctional epoxy resin having bisphenol A skeleton and (b) Epoxy resin having naphthol skeleton can be used together to achieve high glass transition temperature, high fluidity, and high adhesiveness. It can be.
[0012]
In the present invention, (a) a polyfunctional epoxy resin having a bisphenol A skeleton and (b) an epoxy resin having a naphthol skeleton have a weight ratio of polyfunctional epoxy resin / naphthol epoxy resin of 0.1 to 2.0. , Preferably 0.2 to 0.7. If the weight ratio is less than 0.1, the water absorption increases, the viscosity is high, and the adhesive strength decreases, and if it exceeds 2.0, the glass transition temperature decreases.
[0013]
In addition to (a) polyfunctional epoxy resin and (b) naphthol epoxy resin, epibis epoxy resin, brominated epoxy resin, biphenyl type epoxy resin, novolac type epoxy resin and these modified resins may be further added. it can. In this case, the total of the polyfunctional epoxy resin (a) and the naphthol epoxy resin (b) is preferably 10% by weight or more, particularly 40 to 100% by weight, based on the total epoxy resin mixture.
[0014]
As (B) (c) polyfunctional phenol resin used for this invention, what is shown by the said General formula 11 is used. As specific compounds, for example,

(In the formula, n represents an integer of 0 to 10)
Embedded image

(In the formula, n represents an integer of 0 to 10)
Etc.
[0015]
As the phenol resin having (B) (d) naphthol skeleton used in the present invention, those represented by the above general formula 12 are used. As specific compounds, for example,

(In the formula, n represents an integer of 0 to 10)
Embedded image

(In the formula, n represents an integer of 0 to 10)
Etc.
[0016]
In (B) phenol resin, (c) polyfunctional phenol resin and (d) phenol resin having a naphthol skeleton are used in combination, so that a high glass transition temperature, a high glass transition temperature, a high fluidity and a high adhesiveness are obtained. Can be made possible.
[0017]
In the present invention, (c) a polyfunctional phenol resin having a bisphenol A skeleton and (d) a phenol resin having a naphthol skeleton have a weight ratio of polyfunctional phenol resin / naphthol phenol resin of 0.1 to 2.0. , Preferably 0.2 to 0.7. If the weight ratio is less than 0.1, the water absorption increases, the viscosity is high, and the adhesive strength decreases, and if it exceeds 2.0, the glass transition temperature decreases.
[0018]
As the (C) inorganic filler used in the present invention, commonly used ones are widely used. Among them, silica powder having a low impurity concentration and an average particle size of 30 μm or less can be preferably used. If the average particle size exceeds 30 μm, the moisture resistance and moldability are inferior, which is not preferable. The blending ratio of the inorganic filler is desirably 25 to 95% by weight with respect to the entire resin composition. If the ratio is less than 25% by weight, the hygroscopicity of the resin composition is large and the moisture resistance after solder immersion is poor, and if it exceeds 95% by weight, the fluidity becomes extremely poor and the moldability is inferior.
[0019]
As the (D) curing accelerator used in the present invention, phosphorus curing accelerators, imidazole curing accelerators, DBU curing accelerators, other curing accelerators, and the like are widely used. These can be used alone or in combination of two or more. The blending ratio of the curing accelerator is desirably blended so as to contain 0.01 to 5% by weight with respect to the resin composition. If the proportion is less than 0.01% by weight, the gel time of the resin composition is long and the curing properties are deteriorated, and if it exceeds 5% by weight, the fluidity is extremely deteriorated and the moldability is inferior, and the electrical properties are also deteriorated. It becomes inferior in moisture resistance and is not preferable.
[0020]
The epoxy resin composition of the present invention contains the above-mentioned specific epoxy resin, specific phenol resin, inorganic filler and curing accelerator as essential components, but as long as it does not contradict the purpose of the present invention, and as necessary. For example, natural waxes, synthetic waxes, metal salts of linear fatty acids, acid amides, esters, paraffins and other mold release agents, flame retardants such as antimony trioxide, colorants such as carbon black and bengara, silane A coupling agent, a rubber-based or silicone-based low stress imparting agent, and the like can be appropriately added and blended.
[0021]
As a general method for preparing the epoxy resin composition of the present invention as a molding material, the specific epoxy resin, the specific phenol resin, the inorganic filler, the curing accelerator, and other components described above have a predetermined composition ratio. After the selected raw material components are blended and mixed sufficiently uniformly by a mixer or the like, further, a melt mixing process using a hot roll or a mixing process using a kneader is performed, followed by cooling and solidification, and pulverization to an appropriate size to obtain a molding material. can do. If the molding material obtained in this way is applied to the sealing, coating, insulation, etc. of electronic parts and electric parts including a semiconductor device, excellent characteristics and reliability can be imparted.
[0022]
The semiconductor sealing device of the present invention can be easily manufactured by sealing a semiconductor chip using the molding material described above. The semiconductor chip for sealing is not particularly limited, for example, with an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, or the like. The most common method of sealing is a low-pressure transfer molding method, but sealing by injection molding, compression molding, casting or the like is also possible. The molding material is heated and cured at the time of sealing, and finally a semiconductor sealing device sealed with this cured product is obtained. The curing by heating is preferably performed by heating to 150 ° C. or higher. The substrate on which the chip is mounted is not limited to ceramic, plastic, polyimide film, lead frame, or the like.
[0023]
[Action]
The epoxy resin composition and semiconductor sealing device of the present invention reduce the thermal expansion coefficient while maintaining the high glass transition temperature of the resin composition by using the specific epoxy resin and the specific phenol resin described above. In addition, by combining high fluidity, thermo-mechanical properties and low stress properties are improved to suppress package warpage, good moldability, and no occurrence of resin cracks after solder immersion or solder reflow, Moisture resistance deterioration is reduced.
[0024]
【Example】
EXAMPLES Next, although an Example demonstrates this invention concretely, this invention is not limited by these Examples. In the following Examples and Comparative Examples, “parts” means “parts by weight”.
[0025]
Example 1
4.8 parts of the above-mentioned epoxy resin of the chemical formula 14, 1.3 parts of the epoxy resin of the chemical formula 15 (n = 1), 2.3 parts of the phenol resin of the chemical formula 17 (n = 0), the phenol resin of the chemical formula 19 ( n = 0) 1.7 parts, fused silica powder 87 parts, curing accelerator 2-methylimidazole 0.2 part, carnauba wax 0.3 part and epoxysilane coupling agent 0.4 part are mixed at room temperature, Furthermore, it knead | mixed at 90-95 degreeC, this was cooled and pulverized, and the molding material (A) was manufactured.
[0026]
Example 2
3.5 parts of the epoxy resin of Chemical formula 14 used in Example 1, 2.0 parts of the epoxy resin of Chemical formula 15 (n = 1) used in Example 1, 2.0 of the phenolic resin of Chemical formula 17 (n = 0) Part, 2.1 parts of phenolic resin (n = 0), 87 parts of fused silica powder, 0.2 part of 2-methylimidazole as a curing accelerator, 0.3 part of carnauba wax, and epoxysilane coupling agent 0. 4 parts were mixed at room temperature, kneaded at 90 to 95 ° C., and cooled and pulverized to produce a molding material (B).
[0027]
Comparative Example 1
11 parts of o-cresol novolac type epoxy resin (softening point 80 ° C., epoxy equivalent 200), 3 parts novolac type phenol resin (softening point 80 ° C., hydroxyl equivalent 104), 85 parts of fused silica powder, 2-methyl curing accelerator 0.3 part of imidazole, 0.3 part of carnauba wax and 0.4 part of epoxy silane coupling agent were mixed, kneaded at 90 to 95 ° C., and cooled and pulverized to produce a molding material (C).
[0028]
Comparative Example 2
11 parts of epibis type epoxy resin (Epicoat 828), 3 parts of novolac type phenol resin (softening point 80 ° C., hydroxyl group equivalent 104), 85 parts of fused silica powder, 0.3 part of 2-methylimidazole as a curing accelerator, carnauba wax 0 3 parts and 0.4 part of an epoxy silane coupling agent were mixed, kneaded at 90 to 95 ° C., and cooled and pulverized to produce a molding material (D).
[0029]
Using the molding materials (A) to (D) thus produced, transfer injection was carried out into a mold heated to 175 ° C. and cured to seal the semiconductor chip, thereby manufacturing a semiconductor sealing device. Since various tests were performed on these semiconductor sealing devices, the results are shown in Table 1. The epoxy resin composition and the semiconductor sealing device of the present invention have less package warpage, fluidity, moisture resistance, It was excellent in solder heat resistance, and the remarkable effect of the present invention could be confirmed.
[0030]
[Table 1]

* 1: A molded product having a diameter of 50 mm and a thickness of 3 mm was prepared by transfer molding, and this was left in saturated steam at 127 ° C. and 2.5 atm for 24 hours, and measured by the increased weight.
[0031]
* 2: A molded product similar to the case of water absorption was prepared, post-cured at 175 ° C. for 8 hours, a test piece having an appropriate size, and measured using a thermomechanical analyzer.
[0032]
* 3: Tested according to JIS-K-6911.
[0033]
* 4: Using a molding material, a silicon chip having two aluminum wirings is bonded to a normal BGA frame, transfer molded at 175 ° C for 2 minutes, and then post-cured at 175 ° C for 8 hours. It was. The molded product thus obtained was subjected to a moisture resistance test in saturated steam at 127 ° C. and 2.5 atmospheres, and the time during which 50% disconnection (defect occurrence) due to aluminum corrosion occurred was evaluated.
[0034]
* 5: A 10 × 10 mm dummy chip was placed in a BGA (30 × 30 × 1.2 mm) package, and was molded by molding at 175 ° C. for 2 minutes using a molding material, followed by post-curing at 175 ° C. for 8 hours. . The semiconductor sealing device thus manufactured was subjected to moisture absorption treatment at 30 ° C., 60%, 196 hours, and then subjected to IR reflow at 240 ° C. for 30 seconds to evaluate the occurrence of package cracks.
[0035]
* 6: A 10 × 10 mm dummy chip was placed in a BGA (30 × 30 × 1.2 mm) package, and after molding by molding at 175 ° C. for 2 minutes, a post-curing was performed at 175 ° C. for 8 hours. . The warpage amount of the semiconductor sealing device thus manufactured was measured with a non-contact laser measuring machine.
[0036]
【The invention's effect】
As is clear from the above description and Table 1, the epoxy resin composition and the semiconductor sealing device of the present invention have less warpage of the package, good fluidity, excellent moldability, and at the time of mounting. It has excellent solder heat resistance, no resin cracks, good adhesion, excellent moisture resistance after mounting, and long-term reliability.

Claims (2)

(A) (a) a polyfunctional epoxy resin having a bisphenol A skeleton represented by the following general formula;

(In the formula, R ¹ , R ² and R ³ represent a hydrogen atom or an alkyl group having 1 to 10 carbon atoms)
(B) Epoxy resin having a naphthol skeleton represented by the following general formula

(In the formula, R ¹ and R ² represent a hydrogen atom or an alkyl group having 1 to 10 carbon atoms, and n represents an integer of 0 to 10)
An epoxy resin containing (a) component / (b) component in a ratio of 0.1 to 2.0 by weight ratio,
(B) (c) a polyfunctional phenol resin represented by the following general formula;

(In the formula, R represents one or a combination of two or more of hydrogen atom, methyl group, ethyl group, propyl group, butyl group and t-butyl group, and n represents an integer of 0 to 10, respectively. )
(D) A phenol resin having a naphthol skeleton represented by the following general formula

(In the formula, R ¹ and R ² are a hydrogen atom, a methyl group, an ethyl group, a propyl group, a butyl group, and a t-butyl group, and n is 0 to 10) Each represents an integer)
A phenol resin containing (c) component / (d) component in a ratio of 0.1 to 2.0 by weight ratio,
An epoxy comprising (C) an inorganic filler and (D) a curing accelerator as essential components, and containing (C) the inorganic filler in a proportion of 25 to 95% by weight based on the resin composition. Resin composition. (A) (a) a polyfunctional epoxy resin having a bisphenol A skeleton represented by the following general formula;

(In the formula, R ¹ , R ² and R ³ represent a hydrogen atom or an alkyl group having 1 to 10 carbon atoms)
(B) Epoxy resin having a naphthol skeleton represented by the following general formula

(In the formula, R ¹ and R ² represent a hydrogen atom or an alkyl group having 1 to 10 carbon atoms, and n represents an integer of 0 to 10)
An epoxy resin containing (a) component / (b) component in a ratio of 0.1 to 2.0 by weight ratio,
(B) (c) a polyfunctional phenol resin represented by the following general formula;

(In the formula, R represents one or a combination of two or more of hydrogen atom, methyl group, ethyl group, propyl group, butyl group and t-butyl group, and n represents an integer of 0 to 10, respectively. )
(D) A phenol resin having a naphthol skeleton represented by the following general formula

(In the formula, R ¹ and R ² are a hydrogen atom, a methyl group, an ethyl group, a propyl group, a butyl group, and a t-butyl group, and n is 0 to 10) Each represents an integer)
A phenol resin containing (c) component / (d) component in a ratio of 0.1 to 2.0 by weight ratio,
A cured product of an epoxy resin composition containing (C) an inorganic filler and (D) a curing accelerator as essential components, and containing (C) the inorganic filler in a proportion of 25 to 95% by weight based on the resin composition. A semiconductor sealing device characterized by being a single-side sealed BGA type in which a semiconductor chip is sealed.