JP3877656B2 - Semiconductor manufacturing apparatus and method of forming semiconductor element processed using the same - Google Patents

Description

[0001]
[Technical field to which the invention belongs]
The present invention relates to a semiconductor manufacturing apparatus having an improved O-ring cooling structure of a tube joint portion in which a reaction tube is installed.
[0002]
[Prior art]
A semiconductor manufacturing apparatus generates various thin films on a substrate to be processed such as a wafer or a glass substrate, or performs etching or the like to form a large number of semiconductor elements on the surface of the substrate to be processed.
[0003]
In a series of processing steps of such a semiconductor manufacturing apparatus, there is a process of forming a film on a substrate to be processed, and a vertical furnace is one of apparatuses for performing the film forming process.
[0004]
As shown in FIG. 3, the vertical furnace includes a covered cylindrical heater 1 as a heating device, a cylindrical outer tube 2 whose upper end is closed and whose lower end is opened, and a cylindrical inner tube whose upper end is opened. 3. It is comprised by the cylindrical inlet flange 4 and the disk-shaped furnace port cap 5 which is a cover body, and also reacts by the said outer tube 2, the said inner tube 3, the said inlet flange 4, and the said furnace port cap 5. A chamber 6 is formed.
[0005]
Since the film forming process on the substrate to be processed needs to be performed while maintaining the inside of the reaction chamber 6 at a high temperature and in a vacuum state, the inlet flange 4 is joined to the lower end of the outer tube 2 with an O-ring interposed in an airtight manner. The lower end of the inlet flange 4 is hermetically closed by the furnace port cap 5, but the O-ring has a property of being deteriorated by heat.
[0006]
Therefore, conventionally, cooling water is circulated inside the inlet flange 4 to prevent the O-ring from being deteriorated by heat.
[0007]
In the inlet flange 4, when the cooling water is circulated, the inner wall surface of the inlet flange 4 is also cooled, and a part of the reaction by-product generated during film formation in the reaction chamber 6 is the inner wall surface. It cools and solidifies, and adheres to the inner wall surface without being discharged. When the deposited reaction by-product is peeled off, it becomes particles and diffuses into the reaction chamber 6 and adheres to the wafer to reduce product quality and yield.
[0008]
In order to solve the above problems, a cooling structure disclosed in JP-A-11-40505 has been proposed.
[0009]
[Problems to be solved by the invention]
In this cooling structure, a blocking groove is provided between the cooling water channel and the inner wall surface of the tube joint portion, and reaction byproducts do not adhere to the inner wall surface of the tube joint portion. And a reaction gas enters from a minute gap between the tube joint part and the reaction by-product accumulates in the blocking groove which is close to the cooling water channel and is at a low temperature, and particles are formed between the reaction tube and the tube joint part. I found out that there was a new problem of spreading through.
[0010]
In view of such circumstances, the present invention intends to provide a semiconductor manufacturing apparatus that solves the problem that reaction by-products adhere to a blocking groove of a pipe joint portion such as an inlet flange to generate particles.
[0011]
[Means for Solving the Problems]
The present invention comprises a reaction tube, and the tube joint portion erected the reaction tube through the seal member to the upper end flange having an upper flange, and a lid for closing the tube body joint, at least wherein the said reaction tube and said sealing member and the tube joint portion at the semiconductor manufacturing apparatus further reaction chamber is formed with the lid, joining between the reaction tube and the upper surface of the upper flange hermetically internal cooling medium flow passage of said upper flange is provided so as to cool the sealing member, the upper end a between the cooling medium flow passage and the inner wall surface of the reaction gas in contact in the reaction chamber of the tubular body joint relates to semi-conductor manufacturing apparatus said reaction chamber with the outside groove that pass through the flange that is provided, on the groove, relates to a semiconductor manufacturing device in which the heater is inserted, also, the present invention includes a reaction tube, the upper end Has a flange and seals to the top flange A tube joint portion for erecting the reaction tube via a material, and a lid body for closing the tube joint portion, at least the reaction tube, the seal member, the tube joint portion, and the lid body. In a semiconductor manufacturing apparatus in which a reaction chamber is further formed, a cooling medium flow passage is provided in the upper end flange so as to cool the seal member that hermetically joins the upper surface of the upper end flange and the reaction tube. And a semiconductor manufacturing apparatus in which a groove communicating with the outside of the reaction chamber is provided in the upper end flange between the cooling medium flow passage and an inner wall surface of the tube joint portion where the reaction gas in the reaction chamber contacts. A method for forming a semiconductor element, comprising: a step of circulating a cooling medium through the cooling medium flow passage while film formation is being performed on a substrate to be processed in the reaction chamber. It relates to the tube fitting To block heat transfer from the inner wall surface to the cooling water channel, maintaining the tube fitting portion inner wall heated to a high temperature, further prevent the reaction gas is in contact with the blocking groove.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a first embodiment of the present invention will be described with reference to FIG. In FIG. 1, the same components as those shown in FIG.
[0013]
In the figure, reference numeral 25 denotes an inlet flange which is a metallic tube joint portion, and the inlet flange 25 has a jaw-like upper end flange 26 at the upper portion, a lower end flange 27 at the lower portion, and an inner jaw 28 on the inner surface. And a convex portion 29 and a stepped surface 30 are formed on the upper surface of the upper end flange 26.
A lower cushion material 41 is fitted on the upper surface of the convex portion 29, and the flange portion 14 of the outer tube 2 made of quartz or SiC is erected via the lower action material 41, and the flange portion 14 and the step surface 30. An upper end O-ring 36 and a side cushion material 37 are fitted into the lower gap 35 formed from the side of the convex portion 29, and a cover 38 having a reverse L-shaped cross section is formed on the outer upper surface of the stepped surface 30. The upper cushion material 40 is fitted into an upper space 39 formed by the upper surface of the flange portion 14 and the lower surface of the cover 38, so as to cover the entire outer periphery of the outer tube 2 and the outer tube 2. The inlet flange 25 is airtightly joined.
[0014]
A first cooling water channel for cooling the upper end O-ring 36 and the side cushion material 37 is provided inside the upper end flange 26 below the upper end O-ring 36 and the side cushion material 37. The cooling water channel has an annular shape with a cross-sectional shape that is horizontally long and is provided concentrically with the inlet flange 25. The cover 38 is provided with a second cooling water channel 42 for cooling the upper cushion material 40.
[0015]
A blocking groove 34 is formed on the lower surface of the upper end flange 26 between the first cooling water channel 31 and the inner wall surface 33 of the inlet flange 25. The blocking groove 34 communicates with the outside of the reaction chamber 6, that is, is opened to the atmosphere. The blocking groove 34 has a vertically long strip shape in cross section, and is provided concentrically with the cooling water channel 31 over the entire circumference. Preferably, the upper end of the blocking groove 34 is the same as or higher than the upper end of the cooling water channel 31.
[0016]
The lower surface of the lower end flange 27 is hermetically closed by the furnace port cap 5 with a lower end O-ring 21 interposed therebetween. An annular inner tube receiver 22 is fitted into the inner jaw 28 from below, and the inner tube The inner tube 3 is erected on the receptacle 22.
[0017]
During the film formation process in the reaction chamber 6, cooling water is circulated through the cooling water pipe (not shown) in the first cooling water channel 31 and the second cooling water channel 42, The upper end O-ring 36, the side cushion material 37, and the upper section material 39 are cooled. On the other hand, the inside of the reaction chamber 6 is heated by the heater 1 and becomes high temperature, and the inner wall surface 33 of the inlet flange 25 also becomes high temperature. Heat transfer from the inner wall surface 33 that has become high temperature toward the cooling water channel 31 becomes difficult due to the extension of the distance between the inner wall surface 33 and the cooling water 31, and more effectively by the blocking groove 34. Blocked.
[0018]
Note that the heat transfer from the inner wall surface 33 that has become high temperature toward the second cooling water channel 42 in the inverted L-shaped cover 38 has a small influence, so the blocking groove 34 is formed between them. Although not provided, if the effect of cooling is great, it is possible to cut a blocking groove from the outside of the reaction chamber 6 of the inlet flange 25 at a position between the inner wall surface 33 and the second cooling water channel.
[0019]
Moreover, although the example which flows cooling water to the said 1st cooling water channel 31 and the 2nd cooling water channel 42 was demonstrated, not only cooling water but the liquid and gaseous cooling media for cooling other may be flowed. it can.
[0020]
Accordingly, the cooling effect of the cooling water flowing through the cooling water passage 31 with respect to the inner wall surface 33 is greatly reduced, the inner wall surface 33 is maintained at a high temperature, and adhesion of reaction by-products to the inner wall surface 33 is prevented. In addition, since the blocking groove 34 is not in communication with the reaction chamber 6 and is open to the atmosphere, the reaction by-product due to the reaction gas is completely removed.
[0021]
As described above, according to the first embodiment of the present invention, the reaction by-product generated during wafer deposition in the reaction chamber is a pipe joint such as the inlet flange 25 in which the first cooling water channel 31 is formed. Since it is not cooled and solidified from the inner wall surface of the tube portion, it is discharged to the outside without adhering to the inner wall surface of the tube joint portion, and the reactive gas flows into the shut-off groove 34 that is close to the first cooling water channel and is easily cooled. The structure was not. Therefore, the reaction by-product is peeled off from the inner wall surface of the tube joint or the blocking groove 34 and diffused into the reaction chamber 6 as a particle, and does not adhere to the wafer. Yield can be improved. In addition, since reaction by-products do not adhere to the inner wall surface of the pipe joint or the blocking groove 34, the maintenance work of the pipe joint becomes easy, and the maintenance cycle of the pipe joint can be extended. Occupancy rate improves. Furthermore, even if the reaction by-product is corrosive, it is possible to prevent corrosion of the inner wall surface of the tube joint and the blocking groove 34, and to extend the service life of the tube joint portion. Show the effect.
[0022]
Hereinafter, a second embodiment of the present invention will be described with reference to FIG. 2, the apparatus shown in FIG. 1 is partially enlarged. In FIG. 2, the same components as those shown in FIG.
[0023]
The second embodiment of the present invention is an apparatus in which a heater is further inserted into the blocking groove 34 of the first embodiment. According to this apparatus, for example, when a belt-like heater 43 is wound around the blocking groove 34 and a nitride film is formed of, for example, dichlorosilane and ammonia as a reaction gas, the reaction by-product is ammonium chloride. As a temperature at which the reaction by-product ammonium chloride is not formed by heating to a temperature of ℃ or higher, adhesion of ammonium chloride is prevented. It is good to heat in the range below 200 degreeC. In the second embodiment, the cooling efficiency of cooling water or the amount of heating from the heater of the pipe joint fluctuates, and a temperature drop of the pipe joint portion occurs. However, it is possible to reliably prevent the reaction by-product from adhering to the inner wall surface of the pipe joint.
[0024]
【The invention's effect】
As described above, according to the present invention, it is possible to solve the problem that particles are generated due to adhesion of reaction by-products to the blocking groove of the pipe joint portion such as the inlet flange. Yield can be improved.
[Brief description of the drawings]
FIG. 1 is a front sectional view showing a first embodiment of the present invention.
FIG. 2 is a front sectional view showing a second embodiment of the present invention.
FIG. 3 is a schematic explanatory diagram of a vertical furnace.
[Explanation of symbols]
5 Furnace cap 6 Reaction chamber 25 Inlet flange 26 Upper end flange 29 Convex part 30 Step surface 31 First cooling water channel 33 Inner wall surface 34 Cut groove 36 Upper end O-ring

Claims (3)

It has a reaction tube, and the tube joint portion erected the reaction tube through the seal member to the upper end flange having an upper flange, and a lid for closing the tube body joint, at least the reaction tube in the semiconductor manufacturing apparatus further reaction chamber is formed between the sealing member and the tube joint portion and the lid member, cooling said seal member for joining between the upper surface of the upper flange and the reaction tube in an airtight internal cooling medium flow passage of said upper flange is provided to said reaction in said upper flange a between the cooling medium flow passage and the inner wall surface of the reaction gas in contact in the reaction chamber of the tubular body joint the semiconductor manufacturing apparatus characterized by the outdoor unit and communicating groove that passes Ru provided. The semiconductor manufacturing apparatus according to claim 1, wherein a heater is inserted into the groove. A reaction tube, a tube joint portion having an upper end flange and standing the reaction tube on the upper end flange via a seal member, and a lid for closing the tube joint portion, and at least the reaction tube, In a semiconductor manufacturing apparatus in which a reaction chamber is formed by the seal member, the tube joint portion, and the lid, the seal member that airtightly joins the upper surface of the upper end flange and the reaction tube is cooled. A cooling medium flow path is provided in the upper end flange, and the reaction medium is provided between the cooling medium flow path and an inner wall surface of the tube joint portion in contact with the reaction gas in the reaction chamber. A method for forming a semiconductor element to be processed using a semiconductor manufacturing apparatus provided with a groove communicating with the outside of the room,
A method for forming a semiconductor element, comprising: a step of circulating a cooling medium in the cooling medium flow path while a film formation process is performed on a substrate to be processed in the reaction chamber.

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