KR200406614Y1 - Flange of Low Pressure Chemical Vapor Deposition - Google Patents

Flange of Low Pressure Chemical Vapor Deposition Download PDF

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KR200406614Y1
KR200406614Y1 KR2020050031363U KR20050031363U KR200406614Y1 KR 200406614 Y1 KR200406614 Y1 KR 200406614Y1 KR 2020050031363 U KR2020050031363 U KR 2020050031363U KR 20050031363 U KR20050031363 U KR 20050031363U KR 200406614 Y1 KR200406614 Y1 KR 200406614Y1
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flange
chemical vapor
vapor deposition
low pressure
wafer
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KR2020050031363U
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Korean (ko)
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손장선
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주식회사 케이에스엠
손장선
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

본 고안은 반도체 저압화학기상증착(Low Pressure Chemical Vapor Deposition:LP-CVD) 설비의 플랜지에 관한 것으로, 더욱 상세하게는 플랜지를 이중관체형으로 형성하면서도 그 내부에는 내,외부의 온도를 차단토록 하는 단열수단을 갖춤으로써 웨이퍼(Wafer)의 표면상에 가스입자의 균일한 증착이 이루어지도록 함은 물론이고 두터운 막도 균일하게 증착이 이루어지도록 하는 것이다.The present invention relates to a flange of a semiconductor Low Pressure Chemical Vapor Deposition (LP-CVD) facility, and more particularly, to form a double-tubular flange and to insulate the inside and outside of the temperature inside. By providing the means, not only the uniform deposition of gas particles is performed on the surface of the wafer, but also the thick film is uniformly deposited.

이는 상부에는 내,외튜브를 비롯한 가열부가 설치되고 하부에는 웨이퍼가 장착되는 포트가 설치되는 플랜지를 갖춘 반도체 저압화학기상증착 설비에 있어서, 상기 저압화학기상증착의 플랜지는 소정직경을 가지면서 상부에는 냉각수조가 형성됨과 동시에 하부에는 가스유입구 및 가스배출구를 가지는 이중 관체형의 내,외벽면과; 상기 내,외벽면 사이에서 상향 개구되게 형성되고 일측에는 내부의 압력해소를 위해 외부로 연통되는 배기구를 가지는 설치홈과; 상기 설치홈내에 삽입체결되고 내,외부의 열을 차단토록 하는 단열재와; 상기 설치홈의 상단 개구부에 일체로 형성되어 밀폐토록 하는 차단판;으로 구성된 것이다.This is a semiconductor low pressure chemical vapor deposition facility having a flange, which is provided with a heating unit including an inner and an outer tube at the upper part and a port on which a wafer is mounted at the lower part, wherein the flange of the low pressure chemical vapor deposition has a predetermined diameter while A double tube type inner and outer wall surfaces having a gas inlet and a gas outlet at the same time as the cooling water tank is formed; An installation groove formed to open upwardly between the inner and outer wall surfaces and having an exhaust port at one side thereof communicating with the outside to relieve pressure therein; A heat insulating material inserted into the installation groove to block internal and external heat; It is configured to; integrally formed in the upper opening of the installation groove blocking plate to seal.

화학기상증착, 반도체 회학기상증착, 웨이퍼, 웨이퍼 가스증착 Chemical Vapor Deposition, Semiconductor Chemical Vapor Deposition, Wafer, Wafer Gas Deposition

Description

반도체 저압화학기상증착 설비의 플랜지{Flange of Low Pressure Chemical Vapor Deposition}Flange of Semiconductor Low Pressure Chemical Vapor Deposition Facility

도 1은 일반적인 반도체 저압화학기상증착 설비의 개략구성도1 is a schematic configuration diagram of a general semiconductor low pressure chemical vapor deposition equipment

도 2는 본 고안이 적용되는 반도체 저압화학기상증착 설비의 구성도2 is a block diagram of a semiconductor low pressure chemical vapor deposition equipment to which the present invention is applied

도 3는 도2의 요부를 확대하여 보인 구성도3 is an enlarged view illustrating main parts of FIG. 2;

도 4는 본 고안 플랜지의 사시도4 is a perspective view of the present invention flange

도 5는 본 고안 도4의 평면구성도5 is a plan view of the present invention Figure 4

도 6은 본 고안 도4의 일부단면구성도Figure 6 is a partial cross-sectional view of Figure 4 of the present invention

도 7은 본 고안 도6의 일부 확대도7 is an enlarged view of a part of the present invention Figure 6

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

10:외부튜브 11:오링10: Outer tube 11: O-ring

20:내부튜브 30:플랜지20: inner tube 30: flange

31:외벽면 32:수조31: Outer wall surface 32: Water tank

33:유입구 34:배출구33: inlet 34: outlet

35:내벽면 36:설치홈35: inner wall 36: mounting groove

37:차단판 38:배기구37: blocking plate 38: exhaust vent

39:환형돌기 40:보트39: annular protrusion 40: boat

41:웨이퍼 50:단열재41: wafer 50: insulation

51:가스유입구 52:가스배출구51: gas inlet 52: gas outlet

본 고안은 반도체 저압화학기상증착(Low Pressure Chemical Vapor Deposition:LP-CVD) 설비의 플랜지에 관한 것으로, 더욱 상세하게는 플랜지를 이중관체형으로 형성하면서도 그 내부에는 내,외부의 온도를 차단토록 하는 단열수단을 갖춤으로써 웨이퍼(Wafer)의 표면상에 가스입자의 균일한 증착이 이루어지도록 함은 물론이고 두터운 막도 균일하게 증착이 이루어지도록 하는 반도체 저압화학기상증착 설비의 플랜지에 관한 것이다.The present invention relates to a flange of a semiconductor Low Pressure Chemical Vapor Deposition (LP-CVD) facility, and more particularly, to form a double-tubular flange and to insulate the inside and outside of the temperature inside. The present invention relates to a flange of a semiconductor low pressure chemical vapor deposition apparatus which has a means for uniform deposition of gas particles on the surface of a wafer as well as for uniform deposition of thick films.

일반적으로 화학기상증착(CVD)은 상압이나 저압 또는 플라즈마 등의 특정한 상태를 형성하고 있는 챔버의 내부에 막의 재료가 되는 여러 가지 가스들을 공급하여 웨이퍼의 표면상에 요구되는 재질의 막을 증착시키도록 하는 공정이다.In general, chemical vapor deposition (CVD) is a method of depositing a film of a desired material on the surface of a wafer by supplying a variety of gases that are the material of the film to the interior of the chamber forming a specific state, such as atmospheric pressure, low pressure or plasma It is a process.

상기 웨이퍼는 실리콘으로 만든 얇은 원판 형태의 반도체 칩의 원판으로서 이 실리콘 웨이퍼의 표면에 도전층 및 절연층 등의 얇은 막을 증착함과 동시에 회로를 구성하여 전기적 동작이 가능토록 하는 것이다.The wafer is a disk of a semiconductor chip in the form of a thin disk made of silicon, and a thin film such as a conductive layer and an insulating layer is deposited on the surface of the silicon wafer, and a circuit is formed to enable electrical operation.

따라서, 상기한 화학기상증착 공정 중에서 챔버의 내부를 저압상태로 형성하여 공정을 진행토록 하는 것이 일명 저압화학기상증착(LPCVD)이라 할 수 있으며, 이의 일반적인 구성을 살펴보면 도1에서 보는 바와 같다.Therefore, in the chemical vapor deposition process, the interior of the chamber may be referred to as low pressure chemical vapor deposition (LPCVD) to proceed with the process by forming the inside of the chamber in a low pressure state, and a general configuration thereof is shown in FIG. 1.

도1에서 참조되듯이 공정을 위한 챔버(1)는 석영 재질로 형성되는 외측튜브(2)와 내측튜브(3)가 이중으로 형성되어 있고, 하부에는 이들을 지지고정토록 하는 플랜지(4)가 설치되어 있다.As shown in Figure 1, the chamber 1 for the process is formed of a double outer tube (2) and inner tube (3) formed of a quartz material, the lower flange is installed to support them It is.

즉, 상기 플랜지(4)는 소정의 직경을 가지는 금속재질의 관체형상으로 형성되면서 내측면에는 내향 돌출되는 환형돌기가 형성되어 내부튜브(3)가 장착되고, 상단부에는 외측튜브(2)가 올려져 밀착 체결된다.That is, the flange (4) is formed in a tubular shape of a metal material having a predetermined diameter while the inner surface is formed with an annular projection protruding inward to the inner tube (3) is mounted, the upper end of the outer tube (2) is raised Tightly tightened.

또한 상기 플랜지(4)의 일측에는 내부와 연통되면서 가스가 출입되는 가스유입구(4a) 및 가스배출구(4b)가 각각 형성되어 있음과 동시에 하부에는 다수 개의 웨이퍼(5)가 장착되는 보트(boat:6)가 승강가능토록 설치되어 있다.In addition, a gas inlet 4a and a gas outlet 4b through which gas enters and exits at one side of the flange 4 are formed, respectively, and at the same time, a plurality of wafers 5 are mounted on the bottom of the boat 4. 6) is installed to move up and down.

따라서, 이같이 구성되는 종래의 저압 화학기상증착장치는 웨이퍼(5)들이 보트(6)의 슬롯에 장착된 상태에서 이의 보트(6)가 상승작동되어 내측튜브(3)의 내부로 진입하게 됨과 동시에 플랜지(4)의 하단부에 밀착됨으로써 내부를 밀폐된 공간으로 형성하게 된다.Therefore, in the conventional low pressure chemical vapor deposition apparatus configured as described above, while the boats 5 are mounted in the slots of the boat 6, the boat 6 is lifted up to enter the inner tube 3 and at the same time. By being in close contact with the lower end of the flange 4, the interior is formed into a closed space.

이러한 상태에서 가스배출구(4b)를 통하여 챔버(1)의 내부를 진공상태로 유지한 다음, 대상이 되는 가스를 가스유입구(4a)를 통해 유입시킴과 동시에 외측튜브(2)의 외연에 형성된 가열부(미도시됨)를 가동함으로써 웨이퍼(5)의 표면상에 화학성분의 얇은 질화막이 증착되는 것이다.In such a state, the inside of the chamber 1 is maintained in a vacuum state through the gas discharge port 4b, and then a target gas is introduced through the gas inlet 4a and heated at the outer edge of the outer tube 2. By operating the portion (not shown), a thin nitride film of a chemical component is deposited on the surface of the wafer 5.

그러나 이와 같이 구성되는 종래의 화학기상증착장치에 있어서는 플랜지의 구조적인 특성상 여러 가지 문제점이 야기되고 있다.However, in the conventional chemical vapor deposition apparatus configured as described above, various problems are caused due to the structural characteristics of the flange.

즉, 챔버(1)의 내부에는 약 800℃ 정도의 고온이 형성됨에 따라 내,외부의 온도차이로 인하여 금속재질로 이루어지는 플랜지의 내벽면에는 가장 심한 열변화를 가져오게 되고, 이에 따라 웨이퍼(5) 뿐만 아니라 플랜지(4)의 내벽면에도 많은 증착이 이루어지게 된다.That is, as the high temperature of about 800 ° C. is formed inside the chamber 1, the most significant heat change is brought to the inner wall surface of the flange made of metal due to the temperature difference between the inside and the outside. In addition, a lot of deposition is performed on the inner wall surface of the flange 4.

이같이 웨이퍼(5) 외에 원하지 않는 부위에 가스입자가 달라붙어 막이 형성되며, 이는 상대적으로 웨이퍼(5)보다는 결합력이 낮기 때문에 공정이 완료된 후 진공상태가 해제되는 과정에서 외부공기가 유입될 때, 이 막들이 일부 낙하되면서 웨이퍼의 표면으로 낙하되어 불량을 초래하게 된다.As such, a film is formed by adhering gas particles to an unwanted portion other than the wafer 5, and since the bonding force is relatively lower than that of the wafer 5, when external air flows in the process of releasing the vacuum after the process is completed, the film is formed. As the films fall partially, they fall to the surface of the wafer, resulting in a defect.

즉, 웨이퍼 측으로 낙하되는 막들로 인하여 균일한 표면을 유지하지 못하여 후공정에 치명적인 악영향을 미치게 되는 것으로, 이러한 경우 튜브 내부의 장비에 증착된 막, 이를테면 육안으로 거의 보이지 않을 정도의 미립자(article)들이 마치 그을음과 같이 웨이퍼의 표면으로 낙하되어 악영향을 미치게 되는 것이다.That is, the films falling to the wafer side do not maintain a uniform surface, which has a fatal adverse effect on post-processing. In this case, the films deposited on the equipment inside the tube, for example, particles that are almost invisible to the naked eye Like soot, it falls to the surface of the wafer and adversely affects it.

또한, 상기와 같이 원하지 않는 부위에 증착이 이루어질 경우 초기에는 아주 얇은 막 상태이므로 자체 하중이 높지 않아 낙하되는 경우가 적지만, 공정 반복될수록 그 두께가 점차적으로 증가되어 낙하확률이 높아지는 문제점이 있는 것이다.In addition, when the deposition is performed on an unwanted portion as described above, since the initial state is a very thin film, its own load is not high, so it is less likely to fall, but as the process is repeated, the thickness thereof is gradually increased to increase the drop probability. .

이러한 현상을 방지하기 위하여 종래에는 공정을 몇 회 반복한 후, 작업을 중지한 상태(다운 타임:Down Time)에서 내부를 세정하는 작업을 필수적으로 행하였기 때문에 생산성 저하 등 경제적인 손실을 초래하게 되는 문제점이 있었다. In order to prevent such a phenomenon, conventionally, since the process is repeatedly performed several times, and the inside is cleaned in a state where the operation is stopped (down time), an economic loss such as a decrease in productivity is caused. There was a problem.

특히, 이같이 주기적, 반복적인 세정작업에도 불구하고 일부 이물질이 웨이퍼상에 달라붙게 되므로 불량율의 증가는 필연적일 수 밖에 없는 중대한 문제점이 있는 것이었다.In particular, in spite of such periodic and repetitive cleaning operations, some foreign matters stick to the wafer, so that an increase in defect rate is inevitably a serious problem.

본 고안은 상기와 같은 종래의 여러 가지 문제점을 고려하여 이루어진 것으로, 그 목적은 저압 화학기상증착장치의 플랜지를 이중관체로 형성함과 동시에 이들 사이에는 단열재를 설치하여 내,외부의 온도를 차단함으로써 균일한 온도와 압력으로 웨이퍼상에 고른 가스막의 증착을 기대할 수 있도록 하는 반도체 저압화학기상증착 설비의 플랜지를 제공함에 있다.The present invention has been made in consideration of various problems of the related art as described above, and its purpose is to form a flange of a low pressure chemical vapor deposition apparatus into a double tube, and at the same time, by installing a heat insulating material therebetween to block internal and external temperatures. The present invention provides a flange of a semiconductor low pressure chemical vapor deposition apparatus which can expect deposition of an even gas film on a wafer at a temperature and pressure.

이러한 목적을 달성하기 위한 본 고안은 반도체 저압화학기상증착 설비의 플랜지를 개선함으로써 달성되는 것으로, 상기 플랜지는 그 벽면을 상부가 개구되는 이중의 관으로 형성하면서도 이들 사이의 설치공간에 별도의 단열재를 설치하여 상부에서 차단판으로 밀폐하고, 또한 상기 설치공간의 일측에는 공기배기구를 형성하여 열에 의해 단열재가 팽창시 내부압력이 해소될 수 있도록 구성함으로써 플랜지의 내부 온도를 항상 균일하게 유지하여 불필요한 증착이 이루어지는 것을 방지토록 함을 특징으로 하는 것이다.The present invention for achieving the above object is achieved by improving the flange of the semiconductor low pressure chemical vapor deposition equipment, the flange is formed of a double tube that the upper surface of the opening while the separate insulating material between the installation space between them It is installed and sealed at the top with a blocking plate, and on one side of the installation space, an air vent is formed so that the internal pressure can be released when the heat insulator is expanded by heat. It is characterized by preventing from being made.

이하에서 본 고안의 바람직한 실시예를 첨부된 도면에 의하여 상세히 설명하면 다음과 같다.Hereinafter, described in detail by the accompanying drawings a preferred embodiment of the present invention as follows.

첨부된 도면의 도2 및 도3에서는 본 고안의 플랜지가 적용되는 반도체 저압화학기상증착장치의 일부를 나타낸 도면이고, 도4 이하에서는 본 고안의 플랜지를 상세히 나타내고 있다.2 and 3 of the accompanying drawings is a view showing a part of a semiconductor low pressure chemical vapor deposition apparatus to which the flange of the present invention is applied, Figure 4 or below shows the flange of the present invention in detail.

상기 저압화학기상증착장치는 도면에서 보듯이 밀폐형의 외부튜브(10)와 이의 내부에 이중으로 설치되는 내부튜브(20)와, 상기 내,외튜브(10)(20)의 하부에 설치되어 이들을 지지토록 하는 플랜지(30)와, 상기 플랜지(30)의 하부에서 승강작동되면서 웨이퍼를 적층한 보트(40)로 구성된다.The low pressure chemical vapor deposition apparatus is installed in the lower inner tube 20 and the inner tube 20, the inner and outer tubes 10, 20 are installed in the interior of the sealed outer tube 10, as shown in the drawing It consists of a flange 30 to support, and a boat 40 in which wafers are stacked while lifting and lowering at the lower portion of the flange 30.

상기 내,외부튜브(10)(20)는 플랜지(30)의 상부에 설치되어 이에 지지되는 것으로, 상기 플랜지(30)는 금속재질로 이루어지면서 소정 직경을 가지는 이중의 관체형으로 형성된다.The inner and outer tubes 10 and 20 are installed on and supported by the upper portion of the flange 30, and the flange 30 is formed of a metal material and has a double tubular shape having a predetermined diameter.

플랜지(30)는 외벽면(31)의 상단부에 외부튜브(10)가 밀착체결되면서 외주연을 따라 냉각수가 저수되어 상단 결합부의 오링(11)을 냉각시키도록 하는 수조(32)가 갖추어져 구성된다,The flange 30 is provided with a water tank 32 to cool the O-ring 11 of the upper coupling portion by cooling water along the outer circumference while the outer tube 10 is tightly fastened to the upper end of the outer wall 31. ,

상기 수조(32)의 냉각수는 플랜지(30)와 외부튜브(10) 사이에 기밀을 유지토록 설치되는 오링(11)의 열변형을 방지하기 위한 것이며, 일측에는 수조(32)내로 냉각수를 유입토록 하는 유입구(33)와 냉각수를 배출토록 하는 배출구(34)가 형성된다.The cooling water of the water tank 32 is for preventing the thermal deformation of the O-ring 11 is installed to maintain the airtight between the flange 30 and the outer tube 10, the one side to allow the cooling water to flow into the water tank (32). Inlet 33 is formed and the outlet 34 for discharging the coolant is formed.

또한, 외벽면(31)의 내부에는 내벽면(35)이 형성되면서 이들 사이에는 상향 개구되는 설치홈(36)이 형성되고, 이 설치홈(36)에는 단열성을 뛰어난 석영 등의 재질로 이루어지는 단열재(50)가 설치된다.In addition, an inner wall 35 is formed inside the outer wall 31, and an installation groove 36 is formed therebetween, and the opening is formed therebetween, and the installation groove 36 is made of a material such as quartz having excellent thermal insulation. 50 is installed.

즉, 상기 설치홈(36)은 외벽면(31)과 내벽면(35)에 의해 상향 개구되는 형태로 설치되어 별도의 단열재(50)가 설치되는 것이며, 이의 단열재(50)는 석영 재질 뿐만 아니라 내열성과 단열성이 뛰어난 여러 가지 재질로 형성되어 내,외부의 온도 를 차단하게 된다.That is, the installation groove 36 is installed in a form that is opened upward by the outer wall surface 31 and the inner wall surface 35 is a separate heat insulating material 50 is installed, its heat insulating material 50 is not only quartz material It is made of various materials with excellent heat resistance and heat insulation to block the internal and external temperature.

또한, 상기 설치홈(36)의 상단에는 별도의 차단판(37)이 용접 등의 방법으로 체결되어 설치홈(36)을 밀폐시키게 되고, 상기 설치홈(36)의 일측 소정에는 내부에서 단열재(50)가 고온에 의해 팽창시 압력을 해소토록 하는 배기구(38)가 형성된다.In addition, a separate blocking plate 37 is fastened to the upper end of the installation groove 36 by welding or the like to seal the installation groove 36, and at one side of the installation groove 36, a heat insulating material ( An exhaust port 38 is formed to relieve the pressure when 50 is inflated by the high temperature.

상기 배기구(38)는 설치홈(36)내에 발생되는 고압을 외부로 해소토록 하기 위한 것으로, 즉 고온에 의해 단열재(50)가 열팽창되는 경우 압력이 지나치게 증가하여 터질 수 있는 것을 미연에 방지하기 위한 것이며, 적어도 하나 이상 설치하는 것이 요구된다.The exhaust port 38 is for relieving the high pressure generated in the installation groove 36 to the outside, that is, to prevent the pressure from being excessively increased and burst when the thermal insulation material 50 is thermally expanded by the high temperature. And at least one installation is required.

또한, 상기 플랜지(30)의 하부 일측에는 내부로 가스를 유입토록 하는 가스유입구(51)가 설치됨과 동시에 타측에는 가스배출구(52)가 각각 설치되어 챔버의 내부로 웨이퍼에 막을 형성토록 하는 가스를 유입 및 배출시키게 된다.In addition, a gas inlet 51 for injecting gas into the lower side of the flange 30 is provided, and gas outlets 52 are provided in the other side to form a film on the wafer inside the chamber. Inlet and outlet.

그리고, 상기 플랜지(30)의 하부에는 웨이퍼(41)를 슬롯에 적층하여 내,외부튜브(10)(20)내로 출입시키도록 하는 보트(40)가 설치되고, 이 보트(40)는 미도시된 별도의 엘레베이터에 의해 승강작동된다.In addition, a boat 40 is installed at a lower portion of the flange 30 to allow wafers 41 to be stacked in slots to enter and exit the inner and outer tubes 10 and 20, and the boat 40 is not shown. Is lifted and operated by a separate elevator.

한편, 도면중 미설명 부호 39는 플랜지의 외벽면 내부에 내향 돌출되게 설치되는 환형돌기로서 이는 내부튜브(20)가 설치되는 기능을 제공하게 된다. On the other hand, reference numeral 39 in the drawing is an annular projection which is installed to protrude inward in the inner wall surface of the flange, which provides a function that the inner tube 20 is installed.

이와 같이 구성되는 본 고안은 플랜지(30)의 상부에 내,외튜브(10)(20)가 각각 설치됨과 동시에 하부에는 보트(40)가 설치되고, 상기 외부튜브(10)의 외주연에는 미도시된 가열부가 설치된다.The present invention configured as described above has the inner and outer tubes 10 and 20 respectively installed on the upper portion of the flange 30 and the boat 40 is installed on the lower portion thereof. The illustrated heating section is installed.

따라서, 튜브내에 웨이퍼를 넣고 내부를 고온/진공상태로 만든 후 대상이 되는 가스를 충진하여 웨이퍼의 표면상에 그 가스에 포함된 화학성분들을 얇은 막으로 증착하도록 하는 것이다.Therefore, the wafer is placed in a tube, and the inside is made hot / vacuum state, and then the target gas is filled to deposit a chemical film contained in the gas on the surface of the wafer in a thin film.

즉, 웨이퍼(41)들이 보트(40)의 슬롯에 장착된 상태에서 상기 보트(40)가 별도의 엘리베이터와 같은 승강기에 의해 서서히 상승되어 내부튜브(20)의 내측으로 이동하게 되면 챔버의 내부는 밀폐된다.That is, in the state in which the wafers 41 are mounted in the slots of the boat 40, when the boat 40 is gradually lifted by an elevator such as a separate elevator and moved inside the inner tube 20, the inside of the chamber is It is sealed.

이어서 도면중 미도시된 가열부(외부튜브의 외측에 설치됨)가 가열되면서 튜브 내측의 온도를 약800℃ 정도로 유지하게 됨과 동시에, 진공펌프를 통하여 튜브 내부의 공기를 배출시켜 챔버내를 진공상태로 유지하게 된다.Subsequently, the heating unit (not provided in the outer tube), which is not shown in the drawing, is heated to maintain the temperature inside the tube at about 800 ° C., and the air inside the tube is discharged through the vacuum pump to bring the chamber into a vacuum state. Will be maintained.

이는 내부에 잔류하는 공기 중에 포함된 산소, 이산화탄소, 질소, 수분 등과 같은 불순물의 영향을 최소화하기 위한 것으로 즉, 열전달물질인 공기를 최대한 제거하여 튜브내의 온도편차를 줄이기 위함이다.This is to minimize the influence of impurities such as oxygen, carbon dioxide, nitrogen, moisture, etc. contained in the air remaining inside, that is to reduce the temperature deviation in the tube by removing the air as a heat transfer material as much as possible.

챔버내의 진공이 이루어지고 나면 가스유입구(51)를 통해 가스(SiH2CL2, NH3, SiH4, N2O 등)를 주입함으로써 이 가스에 의한 화학적인 반응이 시작되면서 웨이퍼(41)의 표면상에 막이 증착된다.After the vacuum in the chamber is made, a gas (SiH 2 CL 2, NH 3, SiH 4, N 2 O, etc.) is injected through the gas inlet 51 to initiate a chemical reaction by the gas, and a film is deposited on the surface of the wafer 41.

이때, 상기 챔버내에는 고온/고압이 유지되는 것이나, 본 고안에 의한 단열수단에 의해 외부온도에 의한 영향을 최대한 받지 않고 고른 온도와 압력을 유지하게 됨으로써 증착효율을 향상시키게 된다.At this time, the high temperature / high pressure is maintained in the chamber, by the heat insulating means according to the present invention to maintain the even temperature and pressure without being influenced by the external temperature as much as possible to improve the deposition efficiency.

즉, 플랜지(30)가 금속재질로 이루어짐에 따라 열변화가 가장 심한 플랜지의 벽면내에 단열수단을 포켓형태의 설치홈(36)을 형성하고, 이의 설치홈(36)내에 단 열효과가 우수한 단열재(50)를 설치하여 열변화를 최소화함으로써 챔버내의 고른 열로 인하여 증착효율을 증대시키게 된다 That is, as the flange 30 is made of a metal material, the heat insulating means is formed in the wall surface of the flange having the most thermal change, forming the pocket-shaped installation grooves 36, and the heat insulating material excellent in the heat insulating effect in the installation grooves 36 thereof. By installing 50, the thermal change is minimized, thereby increasing the deposition efficiency due to the even heat in the chamber.

이같이 증착이 완료되면, 전술한 역순의 작동에 의해 챔버내를 대기압으로 만든 후 보트(40)를 하강시켜 웨이퍼(41)를 회수함으로써 일련의 증착공정이 완료되는 것이다.When the deposition is completed as described above, a series of deposition processes are completed by recovering the wafer 41 by lowering the boat 40 by bringing the inside of the chamber to atmospheric pressure by the reverse operation described above.

이상 상세히 설명한 바와 같이 본 고안의 벽면을 이중관체로 형성하면서도 그 내부에 단열재를 설치하여 내,외부의 온도를 차단함으로써 웨이퍼 표면상에 막을 증착시 챔버내의 온도와 압력을 고르게 유지할 수가 있다.As described in detail above, the wall surface of the present invention may be formed as a double tube, but a heat insulating material may be installed therein to block internal and external temperatures to maintain the temperature and pressure in the chamber evenly when the film is deposited on the wafer surface.

따라서, 플랜지의 내벽면에 불필요하게 증착되는 막질이 웨이퍼 표면에 낙하되는 등의 불량발생 원인을 근본적으로 제거할 수 있는 효과를 가지게 될 뿐만 아니라, 웨이퍼 표면에 증착되는 막의 두께를 균일하고도 고르게 유지할 수 있는 효과를 가지게 된다.Therefore, the film quality deposited on the inner wall surface of the flange not only has the effect of fundamentally eliminating the cause of defects such as falling on the wafer surface, but also maintains the thickness of the film deposited on the wafer surface uniformly and evenly. Will have the effect.

또한, 플랜지의 세정작업에 따라 햇수와 시간을 최대한 줄일 수 있는 효과와 더불어 세정작업시 발생되는 폐기물 역시 최대한 줄일 수 있는 등의 효과를 가지게 되는 것이다.In addition, according to the cleaning operation of the flange as well as the effect of reducing the number of years and time as well as the waste generated during the cleaning operation to have the effect of reducing as much as possible.

Claims (1)

상부에는 내,외튜브를 비롯한 가열부가 설치되고 하부에는 웨이퍼가 장착되는 포트가 설치되는 플랜지를 갖춘 반도체 저압화학기상증착 설비에 있어서, In the upper portion of the semiconductor low pressure chemical vapor deposition equipment having a flange, which is provided with a heating unit including an inner and outer tube, and a lower port is installed in the lower part, 상기 저압화학기상증착의 플랜지는 소정직경을 가지면서 상부에는 냉각수조가 형성됨과 동시에 하부에는 가스유입구 및 가스배출구를 가지는 이중 관체형의 내,외벽면과;The low pressure chemical vapor deposition flange has a predetermined diameter and a cooling water tank is formed at the top and a double tube type inner and outer wall surfaces having a gas inlet and a gas outlet at the bottom thereof; 상기 내,외벽면 사이에서 상향 개구되게 형성되고 일측에는 내부의 압력해소를 위해 외부로 연통되는 배기구를 가지는 설치홈과;An installation groove formed to open upwardly between the inner and outer wall surfaces and having an exhaust port at one side thereof communicating with the outside to relieve pressure therein; 상기 설치홈내에 삽입체결되고 내,외부의 열을 차단토록 하는 단열재와;A heat insulating material inserted into the installation groove to block internal and external heat; 상기 설치홈의 상단 개구부에 일체로 형성되어 밀폐토록 하는 차단판;으로 구성됨을 특징으로 하는 반도체 저압화학기상증착 설비의 플랜지.A flange of a semiconductor low pressure chemical vapor deposition apparatus, characterized in that consisting of; barrier plate integrally formed in the upper opening of the installation groove to be sealed.
KR2020050031363U 2005-11-04 2005-11-04 Flange of Low Pressure Chemical Vapor Deposition KR200406614Y1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100910373B1 (en) 2007-07-19 2009-08-04 주식회사 케이에스엠 Chamber of Low Pressure Chemical Vapor Deposition
WO2013058587A1 (en) * 2011-10-19 2013-04-25 주식회사 테라세미콘 Vacuum drying apparatus
KR101306779B1 (en) * 2011-10-19 2013-09-10 주식회사 테라세미콘 Vacuum dry apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100910373B1 (en) 2007-07-19 2009-08-04 주식회사 케이에스엠 Chamber of Low Pressure Chemical Vapor Deposition
WO2013058587A1 (en) * 2011-10-19 2013-04-25 주식회사 테라세미콘 Vacuum drying apparatus
KR101306779B1 (en) * 2011-10-19 2013-09-10 주식회사 테라세미콘 Vacuum dry apparatus

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