JP2009016426A - Manufacturing method for semiconductor device, and board processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce corrosion reactions caused by a cleaning gas to reduce the frequency of regular exchange of a component member. <P>SOLUTION: In a processing furnace 10 of a CVD apparatus, a first heating source 61, a second heating source 62, a third heating source 63, and a fourth heating source 64, are laid on a manifold 17, an exhaust pipe 20, a cleaning gas introducing nozzle 51, and a material gas introducing nozzle 31, respectively, and these heat sources 61 to 64 are connected to a temperature control unit 60. The temperature control unit 60 controls the temperature of each of the manifold 17, the exhaust pipe 20, the cleaning gas introducing nozzle 51, and the material gas introducing nozzle 31 to a temperature that prevents multilayer absorption of a cleaning gas. This reduces the corrosion reactions caused by the cleaning gas, thus reducing the frequency of regular exchange of the manifold 17, the exhaust pipe 20, the cleaning gas introducing nozzle 51, and the material gas introducing nozzle 31, so as to improve the maintenance performance of the CVD apparatus. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

  The present invention relates to a method of manufacturing a semiconductor device and a substrate processing apparatus. For example, an insulating film or a metal film is formed on a semiconductor wafer (hereinafter referred to as a wafer) as a substrate on which a semiconductor integrated circuit device (hereinafter referred to as an IC) is formed. Further, the present invention relates to a device using a semiconductor manufacturing apparatus such as a CVD apparatus, an oxide film forming apparatus, a diffusion apparatus and an annealing apparatus for forming a semiconductor film.

In an IC manufacturing method, for example, a batch type vertical hot wall type low-pressure CVD apparatus as shown in Patent Document 1 is widely used to deposit a CVD film such as silicon nitride or polysilicon on a wafer. Yes.
A batch type vertical hot wall type low pressure CVD apparatus (hereinafter referred to as a CVD apparatus) is composed of an inner tube forming a processing chamber into which a wafer is carried and an outer tube surrounding the inner tube, and a process tube installed in a vertical shape. And a gas introduction pipe for introducing the raw material gas into the inner tube, an exhaust pipe for evacuating the inside of the process tube, and a heater installed outside the process tube to heat the inside of the process tube.
Then, a plurality of wafers are carried from the bottom furnace port into the inner tube in a state where the wafers are aligned in the vertical direction by the boat, and the raw material gas is introduced into the inner tube from the gas introduction pipe, and by the heater. As the inside of the process tube is heated, a CVD film is deposited on the wafer.

Japanese Patent Laid-Open No. 2001-156065

In such a CVD apparatus, the formation of the CVD film on the surface of the wafer is an original purpose, but in reality, the CVD film is deposited on the inner wall of the process tube, for example, in addition to the surface of the wafer.
When the thickness of the deposited film reaches a certain level or more, film peeling occurs and becomes a cause of foreign matter generation on the wafer.
For this reason, it is necessary to perform cleaning to remove the deposited film deposited on the inner wall of the process tube.
Therefore, when a deposited film adheres to a certain level or more, wet cleaning is conventionally performed in which a process tube or the like is removed from the CVD apparatus and removed by a HF (hydrogen fluoride) aqueous solution washing tank.

However, since wet cleaning is extremely difficult to maintain, dry cleaning that is easy to maintain has recently been adopted.
Among these, HF gas can be cited as a cleaning gas candidate for the silicon oxide (SiO ₂ ) film. However, since HF gas is a gas that has a low vapor pressure and is easily liquefied, 75% is required for cleaning by performing dry cleaning. The HF gas is adsorbed in a multilayer manner on the surface of the member in the low temperature part at a temperature of less than ° C.
As a result, a significant corrosion reaction is caused to the member exposed to the HF gas, such as etching of the surface of the quartz member which becomes a low temperature portion, or corrosion of the surface of the metal member such as the exhaust pipe, and the periodicity of these members is caused. Replacement is required, so that the problem that the maintainability is greatly deteriorated remains.

  An object of the present invention is to provide a semiconductor device manufacturing method and a substrate processing apparatus that can reduce the corrosion reaction caused by a cleaning gas.

Typical inventions disclosed in the present application are as follows.
(1) carrying the substrate into the processing chamber;
Supplying a source gas into the processing chamber to form a thin film on the substrate;
Unloading the substrate after thin film formation from the processing chamber;
Cleaning the processing chamber by supplying a cleaning gas into the processing chamber and removing the film deposited in the processing chamber by an etching reaction, and
In the step of cleaning the processing chamber, the processing chamber is heated to a first temperature that causes the etching reaction to occur, and is lower than a thin film formation temperature when forming the thin film among members exposed to the cleaning gas. A method of manufacturing a semiconductor device, wherein a temperature of a low-temperature member that is a temperature is set to a second temperature at which the cleaning gas is not adsorbed in multiple layers.
(2) a processing chamber for processing a substrate;
A heater for heating the processing chamber;
A source gas introduction line for introducing source gas for forming a thin film in the processing chamber;
A cleaning gas introduction line for introducing a cleaning gas for removing a film deposited in the processing chamber into the processing chamber by an etching reaction;
An exhaust line for exhausting the processing chamber;
A heating source that heats a low-temperature member that is lower in temperature than the thin film formation temperature during the thin film formation among the members exposed to the cleaning gas;
Controlling the heater to heat the processing chamber to a first temperature at which the etching reaction occurs while introducing a cleaning gas into the processing chamber;
A controller for controlling the heating source so that the temperature of the low temperature member is a second temperature at which the cleaning gas is not multilayer adsorbed;
A substrate processing apparatus.
(3) In the above (1) and (2), the temperature of the low temperature member is controlled so that the cleaning gas is not adsorbed in multiple layers and does not cause a significant thermal reaction.
(4) In the above (1) and (2), the cleaning gas is a gas containing HF gas.
(5) In the above (1) and (2), the thin film is a silicon oxide film, and the cleaning gas is a gas containing HF gas.
(6) In the above (1) and (2), the cleaning gas is a gas containing HF gas, and the temperature of the low temperature member is controlled to be a temperature of 75 ° C. or higher and lower than 100 ° C.
(7) In (1) and (2), the low temperature member includes a manifold that supports at least a process tube in which the processing chamber is formed, a gas nozzle that introduces the source gas into the processing chamber, and / or exhausts the processing chamber. This is an exhaust pipe.

  According to the above (1) and (2), since the corrosion reaction due to the cleaning gas can be reduced, the frequency of periodic replacement of the constituent members can be reduced, and the maintenance performance can be improved.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

In the present embodiment, the semiconductor device manufacturing method according to the present invention is configured as an IC manufacturing method, and the IC manufacturing method according to the present embodiment is used as a characteristic process as a substrate on which an IC is built. For example, a film forming process for forming an insulating film on the wafer is provided.
In the present embodiment, the substrate processing apparatus according to the present invention is a CVD apparatus (batch type vertical hot wall type reduced pressure CVD apparatus) that performs a film forming process that is a characteristic process in the IC manufacturing method according to the present embodiment. It is configured.
A CVD apparatus according to this embodiment will be described.

The CVD apparatus according to the present embodiment includes the processing furnace 10 shown in FIG.
As shown in FIG. 1, the processing furnace 10 includes a heater 11 as a heating mechanism.
The heater 11 has a cylindrical shape and is vertically installed by being supported by a heater base 12 as a support plate.

A process tube 13 as a reaction tube is disposed concentrically with the heater 11 inside the heater 11. The process tube 13 includes an outer tube 14 as an external reaction tube and an inner tube 15 as an internal reaction tube provided inside the process tube 13.
The outer tube 14 is made of a heat-resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC), and is formed in a cylindrical shape having an inner diameter larger than the outer diameter of the inner tube 15 and having an upper end closed and a lower end opened. It is provided concentrically with the inner tube 15.
The inner tube 15 is made of a heat-resistant material such as quartz or silicon carbide, and is formed in a cylindrical shape having upper and lower ends opened. A processing chamber 16 is formed in a cylindrical hollow portion of the inner tube 15 so that the wafer 1 as a substrate can be accommodated in a state of being aligned in multiple stages in a vertical position in a horizontal posture by a boat described later.

A manifold 17 is disposed concentrically with the outer tube 14 below the outer tube 14. The manifold 17 is made of, for example, stainless steel and is formed in a cylindrical shape with an upper end and a lower end opened.
The manifold 17 is engaged with the inner tube 15 and the outer tube 14 and is provided so as to support them. Since the manifold 17 is supported by the heater base 12, the process tube 13 is installed vertically.
A reaction vessel is formed by the process tube 13 and the manifold 17.
An O-ring 18 as a seal member is provided between the manifold 17 and the outer tube 14.

The manifold 17 is provided with an exhaust pipe 20 as a line for exhausting the atmosphere in the processing chamber 16. The exhaust pipe 20 is disposed at the lower end portion of the cylindrical space 19 formed by the gap between the inner tube 15 and the outer tube 14 and communicates with the cylindrical space 19.
A vacuum exhaust device 23 such as a vacuum pump is provided on the downstream side of the exhaust pipe 20 opposite to the connection side with the manifold 17 via a pressure sensor 21 as a pressure detector and a pressure adjusting device (variable conductance valve) 22. It is connected so that the pressure in the processing chamber 16 can be evacuated to a predetermined pressure (degree of vacuum).
A pressure control unit 24 is electrically connected to the pressure adjusting device 22 and the pressure sensor 21 by an electric wiring B.
Based on the pressure detected by the pressure sensor 21, the pressure control unit 24 is configured to control the pressure in the processing chamber 16 at a desired timing by the pressure adjusting device 22 so as to obtain a desired pressure.

Below the manifold 17, a seal cap 25 is provided as a furnace port lid that hermetically closes the lower end opening of the manifold 17. The seal cap 25 is brought into contact with the lower end of the manifold 17 from the lower side in the vertical direction.
The seal cap 25 is made of a metal such as stainless steel and is formed in a disk shape. On the upper surface of the seal cap 25, an O-ring 26 is provided as a seal member that contacts the lower end of the manifold 17.

  The seal cap 25 is configured to be vertically lifted by a boat elevator 27 as a lifting mechanism vertically installed outside the process tube 13, and thereby a boat described later is carried into and out of the processing chamber 16. It is possible.

A rotation mechanism 28 for rotating the boat is installed on the side of the seal cap 25 opposite to the processing chamber 16. A rotating shaft 29 of the rotating mechanism 28 passes through the seal cap 25 and is connected to a boat described later, and is configured to rotate the wafer 1 by rotating the boat.
A drive control unit 30 is electrically connected to the rotation mechanism 28 and the boat elevator 27 by an electric wiring A, and is configured to control at a desired timing so as to perform a desired operation.

A raw material gas introduction nozzle 31 is connected to the manifold 17 so as to communicate with the inside of the processing chamber 16, and a raw material gas introduction line 32 is connected to the nozzle 31.
A raw material gas supply source and an inert gas supply source (not shown) are connected to the upstream side of the raw material gas introduction line 32 opposite to the connection side with the nozzle 31 via an MFC (mass flow controller) 33 as a gas flow rate controller. It is connected.
A gas flow rate controller 34 is electrically connected to the MFC 33 by an electric wiring C.
The gas flow rate control unit 34 is configured to control the MFC 33 at a desired timing so that the flow rate of the supplied gas becomes a desired amount.

A temperature sensor 35 as a temperature detector is installed in the process tube 13.
A temperature control unit 36 is electrically connected to the heater 11 and the temperature sensor 35 by electric wiring D, respectively.
The temperature control unit 36 adjusts the power supply to the heater 11 based on the temperature information detected by the temperature sensor 35, thereby controlling the temperature in the processing chamber 16 at a desired timing so as to obtain a desired temperature distribution. It is configured.

The pressure control unit 24, the drive control unit 30, the gas flow rate control unit 34, and the temperature control unit 36 also constitute an operation unit and an input / output unit, and are electrically connected to a main control unit 37 that controls the entire CVD apparatus. Has been.
The pressure control unit 24, the drive control unit 30, the gas flow rate control unit 34, the temperature control unit 36, and the main control unit 37 are configured as a controller 38.

A boat 40 as a substrate holder has upper and lower end plates 41 and 42 made of a heat-resistant material such as quartz and silicon carbide, and a plurality of holding pillars 43, and has a long cylindrical shape as a whole. The holding column 43 has a plurality of slots (holding grooves) 44 arranged at equal intervals in the longitudinal direction (vertical direction).
By inserting the peripheral edge of the wafer 1 into the plurality of slots 44 at the same stage at the same time, the boat 40 aligns the plurality of wafers 1 in a horizontal posture and in a state where their centers are aligned with each other so as to hold them in multiple stages. It is configured.
Note that a plurality of heat insulating plates 45 as heat insulating members are arranged in a multi-stage at a lower portion of the boat 40 in a horizontal posture. The heat insulating plate 45 is made of a heat-resistant material such as quartz or silicon carbide, and is formed in a disk shape so that heat from the heater 11 is difficult to be transmitted to the manifold 17 side.

In the present embodiment, a cleaning gas introduction nozzle 51 is connected to a position different from the source gas introduction nozzle 31 of the manifold 17 so as to communicate with the inside of the processing chamber 16 as shown in FIG. A cleaning gas introduction line 52 is connected to the cleaning gas introduction nozzle 51.
A cleaning gas supply source and an inert gas supply source (not shown) are connected to an upstream side of the cleaning gas introduction line 52 opposite to the connection side with the nozzle 51 via an MFC (mass flow controller) 53 as a gas flow rate controller. It is connected.
A gas flow rate control unit 54 (see FIG. 1) is electrically connected to the MFC 53 by an electric wiring E.
The gas flow rate control unit 54 is configured to control the MFC 53 at a desired timing so that the supplied gas flow rate becomes a desired amount, and constitutes a part of the controller 38.

As shown in FIGS. 1 and 2, the manifold 17, the exhaust pipe 20, the cleaning gas introduction nozzle 51, and the source gas introduction nozzle 31 include a first heating source 61, a second heating source 62, and a third heating. A source 63 and a fourth heating source 64 are respectively laid.
The manifold 17, the exhaust pipe 20, the cleaning gas introduction nozzle 51, and the source gas introduction nozzle 31 are low temperature members that have a temperature lower than the thin film formation temperature when forming a thin film, which will be described later.
These heating sources 61, 62, 63 and 64 are connected to the temperature control unit 60 by electric wiring F, respectively. The temperature control unit 60 constitutes a part of the controller 38, and the temperature of the manifold 17, the exhaust pipe 20, the cleaning gas introduction nozzle 51, and the source gas introduction nozzle 31 is set to a temperature at which the cleaning gas is not adsorbed in multiple layers. It is configured to control as much as possible.

Next, a method of forming a thin film on the wafer 1 by the CVD method as one step of the semiconductor device manufacturing process using the processing furnace 10 having the above configuration will be described.
In the following description, the operation of each part constituting the CVD apparatus is controlled by the controller 38.

When a plurality of wafers 1 are loaded into the boat 40 (wafer charge), as shown in FIG. 1, the boat 40 holding the plurality of wafers 1 is lifted by the boat elevator 27 and is processed into the processing chamber 16. Is loaded (boat loading).
In this state, the seal cap 25 is in a state of sealing the lower end of the manifold 17 via the O-ring 26.

The processing chamber 16 is evacuated by the evacuation device 23 so as to have a desired pressure (degree of vacuum). At this time, the pressure in the processing chamber 16 is measured by the pressure sensor 21, and the pressure adjusting device 22 is feedback-controlled based on the measured pressure.
Further, the processing chamber 16 is heated by the heater 11 so as to have a desired temperature.
At this time, the power supply to the heater 11 is feedback-controlled based on the temperature information detected by the temperature sensor 35 so that the inside of the processing chamber 16 has a desired temperature distribution.
Subsequently, when the boat 40 is rotated by the rotation mechanism 28, the wafer 1 is rotated.

Next, a processing gas is supplied from a processing gas supply source. The gas controlled to have a desired flow rate by the MFC 33 is introduced into the processing chamber 16 from the nozzle 31 through the source gas introduction line 32.
The introduced gas rises in the processing chamber 16, flows out from the upper end opening of the inner tube 15 into the cylindrical space 19, and is exhausted from the exhaust pipe 20.
The gas contacts the surface of the wafer 1 as it passes through the processing chamber 16, and at this time, a thin film is deposited on the surface of the wafer 1 by a thermal CVD reaction.

  When a preset processing time has passed, an inert gas is supplied from an inert gas supply source, the inside of the processing chamber 16 is replaced with an inert gas, and the pressure in the processing chamber 16 is returned to normal pressure. .

Thereafter, the seal cap 25 is lowered by the boat elevator 27, the lower end of the manifold 17 is opened, and the processed wafer 1 is carried out of the process tube 13 from the lower end of the manifold 17 while being held by the boat 40 ( Boat unloading).
Thereafter, the processed wafer 1 is taken out from the boat 40 (wafer discharge).

As processing conditions when forming a film on a wafer in the processing furnace of the present embodiment, for example, in the formation of a silicon oxide film (DCS-HTO (SiO ₂ ) film), the processing temperature is 700 to 850. ° C., treatment pressure: 10-200 Pa, gas species: DCS and N ₂ O, the gas supply flow rate: DCS0.01~0.5slm, N ₂ O0.01~0.5slm are exemplified.
DCS is an abbreviation for dichlorosilane (SiH ₂ Cl ₂ ), and HTO is an abbreviation for High Temperature Oxide.
Further, for example, in the formation of a silicon nitride film (DCS-Si ₃ N ₄ film), the processing temperature: 650 to 800 ° C., the processing pressure: 10 to 200 Pa, the gas type: DCS and NH ₃ , and the gas supply flow rate: DCS 0 .01 to 0.2 slm, NH ₃ 0.05 to 2.0 slm.
Films are formed on the wafer by keeping these processing conditions constant at certain values within the respective ranges.

By the way, when performing the film forming step as described above, a CVD film is also deposited on the inner wall of the process tube 13 or the surface of the boat 40.
When the thickness of the deposited film adhering to the inner wall or the like of the process tube 13 reaches a certain level or more, the film is peeled off, which causes a foreign matter generation on the wafer 1.
Therefore, in the IC manufacturing method according to the present embodiment, the dry cleaning step is performed before the deposited film has a thickness to peel off.

Hereinafter, a dry cleaning step for directly introducing HF gas into the processing furnace 10 and removing the deposited film will be described.
An empty boat 40 to which the deposited film is attached is carried into the process tube 13 to which the deposited film is attached by the boat elevator 27. In this state, the seal cap 25 is in a state of sealing the lower end of the manifold 17 via the O-ring 26.
The inside of the processing chamber 16 is heated to a predetermined temperature by the heater 11. At this time, the power supply to the heater 11 is feedback-controlled based on the temperature information detected by the temperature sensor 35 so that the inside of the processing chamber 16 has a desired temperature distribution.
Thereafter, the HF gas as the cleaning gas is introduced into the processing chamber 16 from the cleaning gas introduction nozzle 51 through the cleaning gas introduction line 52 while being controlled so as to have a desired flow rate by the MFC 53.
The introduced HF gas rises in the processing chamber 16, flows out from the upper end opening of the inner tube 15 into the cylindrical space 16, and is exhausted from the exhaust pipe 20.
When the HF gas passes through the processing chamber 16, it comes into contact with the deposited film attached to the inner wall of the process tube 13, the surface of the boat 40, and the like. At this time, the deposited film is removed by the etching reaction of HF gas.
At this time, the pressure is adjusted by a pressure adjusting device (variable conductance valve) 22 provided in the exhaust pipe 20 so as to keep the pressure in the processing chamber 16 constant, and cleaning is performed through the exhaust pipe 20 and a vacuum exhaust device 23 such as a vacuum pump. Exhaust the gas. At this time, the pressure in the processing chamber 16 is measured by the pressure sensor 21, and the pressure regulator 22 is feedback-controlled based on the measured pressure.
At this time, the boat 40 may be rotated by the rotation mechanism 28.

  When the preset time has elapsed and the deposited film is removed, the supply of the cleaning gas from the cleaning gas introduction nozzle 51 is stopped immediately, and the inside of the processing chamber 16 is purged with an inert gas. Seasoning is performed to return to a state in which the process can proceed to the film forming step.

In the above cleaning step, since the HF gas is a gas that has a low vapor pressure and is liable to be liquefied, conventionally, by performing the dry cleaning step, the manifold 17 and the exhaust pipe 20 that become a low temperature portion of less than 75 ° C. at the time of cleaning. In other words, the HF gas is adsorbed in multiple layers on the surfaces of the cleaning gas introduction nozzle 51 and the raw material gas introduction nozzle 31.
When this multilayer adsorption of HF gas occurs, it is exposed to HF gas like etching on the quartz surface of the exhaust pipe 20, the cleaning gas introduction nozzle 51 and the raw material gas introduction nozzle 31 and corrosion on the metal surface of the manifold 17. A significant corrosion reaction occurs on the surface.
In addition, when a quartz member is etched or a metal member is corroded, a remarkable thermal reaction occurs.
Multilayer adsorption of gas means that gas molecules are adsorbed on the surface of the low temperature part during gas treatment, and after the entire surface is covered with gas molecules, the gas molecules overlap on the gas molecules, and the number of layers of the gas This is a phenomenon in which the surface of the low-temperature part becomes wet by adsorbing to the surface, and is a phenomenon that occurs remarkably with HF gas.
Incidentally, it is considered that the same phenomenon occurs even with chlorine fluoride (ClF ₃ ).

  Therefore, in the IC manufacturing method according to the present embodiment, the temperature of the first heating source 61, the second heating source 62, the third heating source 63, and the fourth heating source 64 is set when the dry cleaning step described above is performed. By controlling with the control part 60, it controls so that the temperature of the manifold 17, the exhaust pipe 20, the cleaning gas introduction nozzle 51, and the raw material gas introduction nozzle 31 may be 75 ° C. or more and less than 100 ° C., which is a temperature at which HF gas does not adsorb in multiple layers. .

＜実験結果＞

Here, in the case of HF gas, it was found by the following experiment that multilayer adsorption does not occur at a temperature of 75 ° C. or higher.
<Experimental conditions>
Pressure 13330Pa, temperature 25 ° C, 35 ° C, 50 ° C, 75 ° C, 95 ° C
<Judgment>

<Experimental result>

On the other hand, the higher the temperature, the more the metal member is corroded. At this time, a remarkable thermal reaction occurs.
However, it has been confirmed that the metal member does not corrode if it is at least less than 100 ° C.

  From the above, by controlling the temperature of the manifold 17, the exhaust pipe 20, the cleaning gas introduction nozzle 51, and the raw material gas introduction nozzle 31 to be 75 ° C. or more and less than 100 ° C., the HF gas as the cleaning gas is removed from these surfaces. Therefore, the multilayer member is not adsorbed and a remarkable thermal reaction does not occur, and etching of the quartz member and corrosion of the metal member can be prevented.

Examples of the cleaning gas containing HF gas include the following.
HF gas alone, HF gas + nitrogen (N ₂ ) gas, HF gas + argon (Ar) gas, HF gas + helium (He) gas, HF gas + F ₂ gas.

Examples of the cleaning gas other than the HF gas include a gas having a low vapor pressure such as chlorine fluoride (ClF ₃ ) gas.

The processing conditions of the cleaning step include, for example, cleaning gas: HF gas, processing temperature: normal temperature to 70 ° C., processing pressure: 133 to 50000 Pa, gas supply flow rate: HF gas 0.5 to 5.0 slm, manifold 17 The temperature of the low-temperature members such as the exhaust pipe 20, the cleaning gas introduction nozzle 51, and the raw material gas introduction nozzle 31 is 75 to 95 ° C, preferably 80 to 95 ° C.
Further, for example, cleaning gas: HF gas and N ₂ gas, processing temperature: normal temperature to 70 ° C., processing pressure: 133 to 50000 Pa, gas supply flow rate: HF gas 0.5 to 5.0 slm, N ₂ gas 0.1 The temperature of low-temperature members such as 10.0 slm, the manifold 17, the exhaust pipe 20, the cleaning gas introduction nozzle 51, and the raw material gas introduction nozzle 31 is 75 to 95 ° C., preferably 80 to 95 ° C.
Cleaning is performed by keeping these processing conditions constant at certain values within the respective ranges.

  According to the embodiment, the following effects can be obtained.

1) When dry cleaning is performed using a cleaning gas containing a gas that is easily adsorbed on the surface, such as HF gas, a manifold, exhaust pipe, or cleaning gas that is placed in a low temperature area and exposed to the cleaning gas is introduced. Corrosion reaction due to multilayer adsorption of CVD apparatus components such as nozzles and source gas introduction nozzles can be reduced.

2) By reducing the corrosion reaction due to multilayer adsorption, the frequency of periodic replacement of CVD equipment components such as manifolds, exhaust pipes, cleaning gas introduction nozzles and source gas introduction nozzles can be reduced, so maintenance performance is improved. Can be improved.

  In addition, this invention is not limited to the said embodiment, It cannot be overemphasized that it can change variously in the range which does not deviate from the summary.

  The film formation process is not limited to the process of forming a silicon oxide film or a silicon nitride film, but other oxide films or nitride films, as well as other CVD films such as metal films and semiconductor films (for example, polysilicon films) are formed. It may be a process to do.

  The CVD apparatus is not limited to a batch type vertical hot wall type low pressure CVD apparatus, but may be another CVD apparatus such as a horizontal type hot wall type low pressure CVD apparatus.

  The method for manufacturing a semiconductor device according to the present invention is not limited to the case of using a CVD apparatus, but can also be applied to the case of using an oxide film forming apparatus, a diffusion apparatus, an annealing apparatus, and the like.

  In the above embodiment, the case where the wafer is processed has been described. However, the processing target may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, or the like.

It is front sectional drawing which shows the processing furnace of the CVD apparatus which is one embodiment of this invention. It is a longitudinal cross-sectional view which shows the principal part.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Wafer (substrate), 10 ... Processing furnace, 11 ... Heater (heating mechanism), 12 ... Heater base, 13 ... Process tube (reaction tube), 14 ... Outer tube (external reaction tube), 15 ... Inner tube (internal) Reaction tube), 16 ... treatment chamber, 17 ... manifold, 18 ... O-ring (seal member), 19 ... cylindrical space, 20 ... exhaust pipe, 21 ... pressure sensor (pressure detector), 22 ... pressure adjusting device, 23 DESCRIPTION OF SYMBOLS ... Vacuum exhaust apparatus, 24 ... Pressure control part, 25 ... Seal cap (furnace opening cover), 26 ... O-ring (seal member), 27 ... Boat elevator, 28 ... Rotation mechanism, 29 ... Rotating shaft, 30 ... Drive control part 31 ... Nozzle (gas introduction unit), 32 ... Raw material gas introduction line, 33 ... MFC (gas flow rate controller), 34 ... Gas flow rate control unit, 35 ... Temperature sensor (temperature detector), 36 ... Temperature control unit, 3 ... Main controller, 38 ... Controller, 40 ... Boat (substrate holder), 41, 42 ... End plate, 43 ... Holding column, 44 ... Slot (holding groove), 45 ... Heat insulation plate (heat insulation member), 51 ... Cleaning Gas introduction nozzle, 52 ... cleaning gas introduction line, 53 ... MFC (gas flow controller), 54 ... gas flow controller, 60 ... temperature controller, 61 to 64 ... heating source.

Claims (2)

Carrying the substrate into the processing chamber;
Supplying a source gas into the processing chamber to form a thin film on the substrate;
Unloading the substrate after thin film formation from the processing chamber;
Cleaning the processing chamber by supplying a cleaning gas into the processing chamber and removing the film deposited in the processing chamber by an etching reaction, and
In the step of cleaning the processing chamber, the processing chamber is heated to a first temperature that causes the etching reaction to occur, and is lower than a thin film formation temperature when forming the thin film among members exposed to the cleaning gas. A method of manufacturing a semiconductor device, wherein a temperature of a low-temperature member that is a temperature is set to a second temperature at which the cleaning gas is not adsorbed in multiple layers. A processing chamber for processing the substrate;
A heater for heating the processing chamber;
A source gas introduction line for introducing source gas for forming a thin film in the processing chamber;
A cleaning gas introduction line for introducing a cleaning gas for removing a film deposited in the processing chamber into the processing chamber by an etching reaction;
An exhaust line for exhausting the processing chamber;
A heating source that heats a low-temperature member that is lower in temperature than the thin film formation temperature during the thin film formation among the members exposed to the cleaning gas;
Controlling the heater to heat the processing chamber to a first temperature at which the etching reaction occurs while introducing a cleaning gas into the processing chamber;
A controller for controlling the heating source so that the temperature of the low temperature member is a second temperature at which the cleaning gas is not multilayer adsorbed;
A substrate processing apparatus.

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