JP3874967B2 - Surface acoustic wave device and manufacturing method thereof - Google Patents
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Description
【０００１】
【発明の属する技術分野】
本発明は、弾性表面波（ＳＡＷ）素子及びその製造方法に関する。より詳しくは、本発明は、表面導電膜のパターニング時に表面導電膜に生じるアフターコロージョンを防止することができるＳＡＷ素子の製造方法及びその方法により得られたＳＡＷ素子に関する。
【０００２】
【従来の技術】
ＬｉＴａＯ3、ＬｉＮｂＯ3及びＫＮｂＯ3等の圧電材は、ＳＡＷ素子の基板として一般的に使用されている。ＳＡＷ素子では、圧電基板の表面に、所定形状（例えば、櫛型）の表面導電膜が形成されており、この導電膜に電気信号が印加されると圧電効果によって電気指間に周期的な歪が生じ、弾性表面波が励起される。この波は再び導電膜によって電気信号に変換される。
上記圧電材は、焦電効果も大きいため、製造工程中の温度変化により、表面に過剰な電荷が蓄積し、これが放電されたとき、導電膜にダメージを与えることが知られている。
【０００３】
このような放電を防止するため、表面導電膜と導通する導電膜を基板の裏面にも形成し、製造工程時に発生する電荷を逃がす方法が、例えば、特開平４−３１３９０６号公報に記載されている。
上記公報には、基板の裏面と側面に形成される導電膜を、表面導電膜のエッチング時にエッチングされにくい構成とすることが記載されている。具体的には、裏面と側面に形成される導電膜を表面導電膜の材質よりエッチングレートの小さい材料を使用する方法、裏面と側面に形成される導電膜を厚くする方法、エッチング時に部材で覆う方法、側面の導電膜を鏡面研磨する方法等が記載されている。
【０００４】
【発明が解決しようとする課題】
上記方法の内、エッチング時に部材で覆う方法及び鏡面研磨する方法は、部材で覆う工程及び研磨する工程が別途必要であり、工程の追加に伴うコストが必要であった。
また、エッチングレートの小さい材料を使用する方法及び導電膜を厚くする方法では、側壁及び裏面の導電膜は、エッチング時に表面の導電膜と切断されないものの、電池効果により表面導電膜が腐食される現象（アフターコロージョン現象）が生じていた。そのためＳＡＷ素子の特性が劣化していた。
【０００５】
【課題を解決するための手段】
本発明の発明者等は、鋭意検討の結果、アフターコロージョン現象が、表面導電膜を構成するＡｌ又はその合金と、裏面導電膜を構成する材料との電池反応によるためであることを意外にも見出した。なお、このアフターコロージョン現象は、焦電効果が大きいＬｉＴａＯ3、ＬｉＮｂＯ3又はＫＮｂＯ3等の圧電材の方がより著しく生じることを見出した。そこで、この現象を解決するために、表面導電膜と裏面導電膜に、両者が電池反応を生じ難い材料を使用することを見出し本発明をなすに至った。
【０００６】
かくして本発明によれば、表面が圧電機能を有する基板の裏面に裏面導電膜を形成し、基板の表面に、裏面導電膜と導通する表面導電膜を形成し、その後表面導電膜をエッチングにより所定形状にパターニングすることからなり、
表面導電膜と裏面導電膜が、同一の材料かつＡｌと２〜４重量％のＭｇとの合金からなる
ことを特徴とするＳＡＷ素子の製造方法が提供される。
【０００７】
更に、本発明によれば、表面が圧電機能を有する基板の表面と裏面に、所定形状の表面導電膜と、裏面導電膜とを有し、
表面導電膜と裏面導電膜が、同一の材料かつＡｌと２〜４重量％のＭｇとの合金からなる
ことを特徴とするＳＡＷ素子が提供される。
【０００８】
【発明の実施の形態】
以下、本発明のＳＡＷ素子及びその製造方法を説明する。
まず、ＳＡＷ素子は、通常基板を備えている。ここで、基板としては、ＳＡＷ素子に使用することができるものであれば特に限定されない。具体的には、ＬｉＴａＯ3、ＬｉＮｂＯ3、ＫＮｂＯ3、Ｌｉ2Ｂ4Ｏ7等の圧電基板、ガラス、樹脂等の基板上にＬｉＴａＯ3、ＬｉＮｂＯ3、ＫＮｂＯ3、Ｌｉ2Ｂ4Ｏ7等の圧電材を膜状に形成した基板が挙げられる。
【０００９】
基板の裏面と表面側（圧電効果を生じる側）に互いに導通した導電膜が形成される。ここで、表面側の導電膜（表面導電膜）は、所定の形状にパターニングされ、電気信号と弾性振動を変換する機能を有する。裏面側の導電膜（裏面導電膜）は、表面導電膜を所定の形状にパターニングする際の温度変化により、圧電材の焦電効果に由来する電荷を逃がす機能を有する。この裏面導電膜がなければ、蓄積した電荷の放電により表面導電膜がダメージを受けてしまい、断線したり、所定の形状が得られないという問題が生じる。
【００１０】
本発明では表面導電膜と裏面導電膜を構成する材料を以下のように組合わせることを特徴の１つとしている。
表面導電膜と裏面導電膜が、同一の材料かつＡｌと２〜４重量％のＭｇとの合金からなる。
【００１５】
この場合、表面導電膜と裏面導電膜は、同一の材料からなるため、電池反応による腐食の問題は生じない。また、各導電膜にＡｌと２〜４重量％のＭｇとの合金を使用するのは次の理由による。即ち、２重量％未満で他の金属を含む場合、この膜のエッチングは化学反応（ラジカルや中性粒子による反応）を主体として進行する。この場合、表面だけでなく側面及び裏面でもエッチングが進行する。そのため、表面導電膜と裏面導電膜の導通が確保できない場合がある。
【００１６】
一方、２重量％以上で他の金属を含む場合、イオンアシスト反応が主体として進行する。このイオンアシスト反応は、イオンと接触する面はエッチングが進行するが、接触しない面のエッチングは進行しない。つまり、イオンと接触する表面ではエッチングが進行するが、裏面導電膜はエッチングされないので、表面導電膜と裏面導電膜の導通を、エッチング後も確保することができる。
なお、上記表面導電膜及び裏面導電膜は、例えば、スパッタ法のような公知の方法で形成することができる。また、それぞれの膜厚は、０．０５〜０．６μｍ及び０．０５〜５μｍであることが好ましい。
【００１７】
次に、表面導電膜をエッチングにより所定形状にパターニングする。ここで、パターニングに先立って、通常所定パターンの電極を形成するためのマスクが表面導電膜上に形成される。このマスクは、例えば、表面導電膜上にレジスト層を塗布することにより形成した後、フォトリソグラフィ法により所定形状にパターニングして形成できる。この所定形状にパターニングされたレジスト層を、レジストパターンと称する。
【００１８】
このレジストパターンをマスクとして、表面導電膜がパターニングされる。パターニングは、例えば反応性イオンエッチングが挙げられる。
パターニング後、残渣を除去するために公知のレジスト剥離液（ＥＬＭ）で表面導電膜が処理される。
以上の工程によりＳＡＷ素子が得られる。１つのウェハ上に複数のＳＡＷ素子を形成する場合にも適用することができる。
【００１９】
本発明のＳＡＷ素子の一例を図１（概略平面図）に示す。図のＳＡＷ素子は、表面導電膜が２つの反射電極と１組の櫛型の励振電極とから構成される。図中、Ａ及びＢは１組の櫛型の励振電極であり、Ｃ及びＤは反射電極である。Ｙは開口長を、λは電極の周期を意味する。
ＳＡＷ素子は、フィルタ（例えば、マッチドフィルタ）、共振器、遅延線、発振器、音響光学装置、コンボルバー等に使用することができる。例えば、フィルタに使用する場合、ＳＡＷ素子を直列腕と並列腕に所望数配置することにより形成されたラダー型の構造が挙げられる。この構造以外にも、公知の構造をいずれも採用することができる。
【００２０】
【実施例】
実施例１（参考例）
まず、６枚のＬｉＴａＯ3からなる圧電基板の裏面に、ＤＣスパッタ法によりＭｇ、Ｔｉ、Ｍｎ、Ｃｒ、Ｎｉ、Ａｕからなる裏面導電膜を３００ｎｍの厚さとなるようにそれぞれ形成した。
次に、基板の表面に、表面導電膜としてＡｌと１重量％のＣｕとの合金（以下、Ａｌ−１ｗｔ％Ｃｕと称する）を２５０ｎｍの厚さとなるようにそれぞれ形成した。この際、表面導電膜の端部が裏面導電膜の端部上に位置するように制御した。
【００２１】
次いで、表面導電膜を櫛型に加工するために、表面導電膜上にフォトレジストを塗布した後、露光を行い所定の形状のレジストパターンを形成した。
このレジストパターンを用いて、ＢＣｌ3／Ｃｌ2からなるエッチャントで表面導電膜を櫛型にエッチング加工することにより、基板上に複数のＰＣＳ仕様のＳＡＷ素子（直列に接続された共振器（直列共振器）と並列に接続された共振器（並列共振器）とからなり、直列共振器が電極の周期２．０８μｍ、開口長４０μｍ、励振電極の対数１６０、反射電極の対数８０であり、並列共振器が電極の周期２．１４μｍ、開口長５０μｍ、励振電極の対数８０、反射電極の対数８０である）を形成した。更に、レジストパターンをＯ2を用いてアッシングし、フッ素系ガスを使用してポストエッチングを行った。
【００２２】
更に、表面導電膜の側壁及び残渣を除去するために、ＥＬＭを用いて溶液処理した。以上の処理により６種類の裏面導電膜を有する６つの試料を得た。
以上の工程を経た後、６つの試料についてアフターコロージョン現象の発生の様子を調べた。結果を表２に示す。
【００２３】
【表２】
表２は、１つのＳＡＷ素子あたりの腐食の個数を、各試料について測定した結果である。この結果、裏面導電膜を構成する材料が、標準電極電位が小さい方がアフターコロージョン現象を防止できることが分かり、更にＣｒより標準電極電位が小さい材料を使用すればアフターコロージョン現象をほぼ完全に防止できることが分かった。
上記の内、裏面導電膜にＣｒとＴｉを使用したＳＡＷ素子について、フィルタ特性と耐電力性（８５℃での中心周波数における最大印加電力で評価）を測定した。得られた結果を表３に示す。
【００２５】
【表３】
表３からアフターコロージョン現象の生じていないＳＡＷ素子の方が、どの特性に関しても優れていることが分かった。また、耐電力性が特に優れていることが分かった。
【００２７】
実施例２（参考例）
まず、２枚のＬｉＴａＯ3からなる圧電基板の裏面に、ＤＣスパッタ法によりＴｉ（５０ｎｍ）／Ａｕ（２００ｎｍ）、Ｍｇ（５０ｎｍ）／Ａｌ（２００ｎｍ）からなる裏面導電膜をそれぞれ形成した。以降の工程は実施例１と同様に行った。得られたＳＡＷ素子のアフターコロージョン現象の発生の様子を調べたところ、裏面導電膜がＴｉ／Ａｕの場合は腐食が多数生じ、Ｍｇ／Ａｌの場合は腐食は生じなかった。
【００２８】
実施例３
表面導電膜と裏面導電膜を、それぞれ２００ｎｍと３００ｎｍとし、両膜に次の同じ材料を使用すること以外は、実施例１と同様に行った。使用した材料は、純Ａｌ、Ａｌ−１重量％Ｍｇ、Ａｌ−２重量％Ｍｇ、Ａｌ−３重量％Ｍｇ、Ａｌ−４重量％Ｍｇを使用した。得られたＳＡＷ素子の表面と裏面の導電膜の導通状態を調べた。
【００２９】
その結果、Ａｌ−２重量％Ｍｇ、Ａｌ−３重量％Ｍｇ、Ａｌ−４重量％Ｍｇの裏面導電膜を使用した場合は、導通が損なわれていなかった。純Ａｌ、Ａｌ−１重量％Ｍｇの裏面導電膜を使用した場合は、導通がなくなっていた。なお、全ての試料にアフターコロージョン現象は生じていなかった。
【００３０】
【発明の効果】
本発明によれば、ＳＡＷ素子の製造方法において、従来トレードオフの関係にあった焦電による放電破壊と、エッチング後のアフターコロージョンの問題とを同時に解決することができる。その結果、ＳＡＷ素子の歩留まりと信頼性を向上させることができる。
【図面の簡単な説明】
【図１】本発明のＳＡＷ素子の概略断面図である。
【符号の説明】
Ａ、Ｂ 励振電極
Ｃ、Ｄ 反射電極
Ｙ 開口長
λ 電極の周期[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a surface acoustic wave (SAW) element and a method for manufacturing the same. More specifically, the present invention relates to a method for manufacturing a SAW element capable of preventing after-corrosion generated in a surface conductive film during patterning of the surface conductive film, and a SAW element obtained by the method.
[0002]
[Prior art]
Piezoelectric materials such as LiTaO 3 , LiNbO 3 and KNbO 3 are generally used as substrates for SAW elements. In a SAW element, a surface conductive film having a predetermined shape (for example, a comb shape) is formed on the surface of a piezoelectric substrate. When an electric signal is applied to the conductive film, periodic distortion is generated between electric fingers due to the piezoelectric effect. And surface acoustic waves are excited. This wave is again converted into an electric signal by the conductive film.
Since the piezoelectric material has a large pyroelectric effect, it is known that excessive charge accumulates on the surface due to a temperature change during the manufacturing process, and when this is discharged, the conductive film is damaged.
[0003]
In order to prevent such a discharge, a method of forming a conductive film that is electrically connected to the front surface conductive film on the back surface of the substrate and releasing charges generated during the manufacturing process is described in, for example, Japanese Patent Laid-Open No. 4-313906. Yes.
The above publication describes that the conductive film formed on the back and side surfaces of the substrate is configured to be difficult to etch when etching the front surface conductive film. Specifically, the method of using a material having a lower etching rate than that of the surface conductive film, the method of increasing the thickness of the conductive film formed on the back and side surfaces, and covering with a member during etching. A method, a method of mirror polishing a conductive film on a side surface, and the like are described.
[0004]
[Problems to be solved by the invention]
Among the above methods, the method of covering with a member at the time of etching and the method of mirror polishing require a step of covering with a member and a step of polishing separately, and costs associated with the addition of the step.
In the method using a material with a low etching rate and the method for thickening the conductive film, the conductive film on the side wall and the back surface is not cut off from the conductive film on the surface during etching, but the surface conductive film is corroded by the battery effect. (After-corrosion phenomenon) occurred. Therefore, the characteristics of the SAW element have been deteriorated.
[0005]
[Means for Solving the Problems]
The inventors of the present invention have surprisingly found that the after-corrosion phenomenon is due to the battery reaction between Al constituting the surface conductive film or an alloy thereof and the material constituting the back conductive film as a result of intensive studies. I found it. It has been found that this after-corrosion phenomenon occurs more significantly in piezoelectric materials such as LiTaO 3 , LiNbO 3, or KNbO 3 having a large pyroelectric effect. Therefore, in order to solve this phenomenon, the inventors have found that both the front surface conductive film and the back surface conductive film use materials that do not easily cause a battery reaction, and have made the present invention.
[0006]
Thus, according to the present invention, the back surface conductive film is formed on the back surface of the substrate having a piezoelectric function on the surface, and the front surface conductive film is formed on the surface of the substrate to be electrically connected to the back surface conductive film. Consisting of patterning into shapes,
Table Menshirube conductive film and the back-surface conductive film, a manufacturing method of the SAW element, characterized in that it consists of the same material and Al and 2-4 wt% of the alloy of Mg is provided.
[0007]
Further, according to the present invention, the surface has a surface conductive film having a predetermined shape and a back conductive film on the front and back surfaces of the substrate having a piezoelectric function,
Table Menshirube conductive film and the back-surface conductive film, the same material and Al and the SAW element characterized in that it consists of 2-4% by weight of the alloy of Mg is provided.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the SAW element of the present invention and the manufacturing method thereof will be described.
First, a SAW element usually includes a substrate. Here, the substrate is not particularly limited as long as it can be used for a SAW element. Specifically, a piezoelectric substrate such as LiTaO 3 , LiNbO 3 , KNbO 3 , Li 2 B 4 O 7 , a glass, a resin, etc. on a substrate such as LiTaO 3 , LiNbO 3 , KNbO 3 , Li 2 B 4 O 7, etc. Examples include a substrate in which a piezoelectric material is formed in a film shape.
[0009]
Conductive conductive films are formed on the back surface and the front surface side (side where the piezoelectric effect is generated) of the substrate. Here, the conductive film on the surface side (surface conductive film) is patterned into a predetermined shape and has a function of converting an electric signal and elastic vibration. The conductive film on the back surface side (back surface conductive film) has a function of releasing charges derived from the pyroelectric effect of the piezoelectric material due to a temperature change when the surface conductive film is patterned into a predetermined shape. Without this back conductive film, the conductive film on the front surface is damaged by the discharge of the accumulated electric charge, and there arises a problem that a predetermined shape cannot be obtained.
[0010]
It you are one of the features of combining the material for forming the surface conductive film and the back-surface conductive film as follows in the present invention.
Table Menshirube conductive film and the back-surface conductive film, ing the same material and the alloy of Al and 2-4% by weight of Mg.
[0015]
In this case, the surface conductive layer and the back conductive film to become the same material, there is no corrosion problems due to cell reaction. The reason why an alloy of Al and 2 to 4% by weight of Mg is used for each conductive film is as follows. That is, when other metals are contained at less than 2% by weight, etching of this film proceeds mainly by chemical reaction (reaction by radicals or neutral particles). In this case, etching proceeds not only on the front surface but also on the side and back surfaces. Therefore, there may be a case where the conduction between the front surface conductive film and the back surface conductive film cannot be ensured.
[0016]
On the other hand, when other metals are contained at 2% by weight or more, the ion assist reaction proceeds mainly. In this ion assist reaction, etching proceeds on the surface in contact with ions, but etching on the surface that does not contact proceeds. That is, although etching proceeds on the surface in contact with the ions, the back surface conductive film is not etched, so that conduction between the front surface conductive film and the back surface conductive film can be ensured even after etching.
The front surface conductive film and the back surface conductive film can be formed by a known method such as sputtering. Moreover, it is preferable that each film thickness is 0.05-0.6 micrometer and 0.05-5 micrometers.
[0017]
Next, the surface conductive film is patterned into a predetermined shape by etching. Here, prior to patterning, a mask for forming electrodes having a predetermined pattern is usually formed on the surface conductive film. The mask can be formed by, for example, forming a resist layer on the surface conductive film and then patterning the mask into a predetermined shape by photolithography. The resist layer patterned in this predetermined shape is referred to as a resist pattern.
[0018]
The surface conductive film is patterned using this resist pattern as a mask. Examples of the patterning include reactive ion etching.
After the patterning, the surface conductive film is treated with a known resist stripper (ELM) to remove residues.
A SAW element is obtained by the above process. The present invention can also be applied to a case where a plurality of SAW elements are formed on one wafer.
[0019]
An example of the SAW element of the present invention is shown in FIG. 1 (schematic plan view). In the illustrated SAW element, the surface conductive film is composed of two reflective electrodes and a pair of comb-shaped excitation electrodes. In the figure, A and B are a pair of comb-shaped excitation electrodes, and C and D are reflection electrodes. Y represents the aperture length, and λ represents the period of the electrode.
The SAW element can be used for a filter (for example, a matched filter), a resonator, a delay line, an oscillator, an acoustooptic device, a convolver, and the like. For example, when used in a filter, a ladder type structure formed by arranging a desired number of SAW elements on a series arm and a parallel arm can be mentioned. In addition to this structure, any known structure can be adopted.
[0020]
【Example】
Example 1 (Reference Example)
First, backside conductive films made of Mg, Ti, Mn, Cr, Ni, and Au were formed to a thickness of 300 nm on the backside of six LiTaO 3 piezoelectric substrates by DC sputtering.
Next, an alloy of Al and 1 wt% Cu (hereinafter referred to as Al-1 wt% Cu) was formed on the surface of the substrate so as to have a thickness of 250 nm as a surface conductive film. At this time, control was performed so that the end portion of the front surface conductive film was positioned on the end portion of the back surface conductive film.
[0021]
Next, in order to process the surface conductive film into a comb shape, after applying a photoresist on the surface conductive film, exposure was performed to form a resist pattern having a predetermined shape.
Using this resist pattern, the surface conductive film is etched into a comb shape with an etchant made of BCl 3 / Cl 2 , so that a plurality of PCS specification SAW elements (resonators connected in series (series resonance) A series resonator having an electrode period of 2.08 μm, an opening length of 40 μm, a number of excitation electrode pairs of 160, and a number of reflection electrode pairs of 80. The electrode has an electrode period of 2.14 μm, an aperture length of 50 μm, a pair of excitation electrodes of 80, and a pair of reflection electrodes of 80. Further, the resist pattern was ashed using O 2 and post-etched using a fluorine-based gas.
[0022]
Furthermore, in order to remove the side wall and residue of the surface conductive film, solution treatment was performed using ELM. Six samples having six types of back conductive films were obtained by the above treatment.
After going through the above steps, the occurrence of after-corrosion phenomenon was examined for six samples. The results are shown in Table 2.
[0023]
[Table 2]
Table 2 shows the results of measuring the number of corrosions per SAW element for each sample. As a result, it can be seen that the material constituting the back surface conductive film can prevent the after-corrosion phenomenon when the standard electrode potential is lower, and further, the after-corrosion phenomenon can be almost completely prevented by using a material having a lower standard electrode potential than Cr. I understood.
Among the above, SAW elements using Cr and Ti for the back conductive film were measured for filter characteristics and power durability (evaluated by maximum applied power at a central frequency at 85 ° C.). The obtained results are shown in Table 3.
[0025]
[Table 3]
From Table 3, it was found that the SAW element in which no after-corrosion phenomenon occurred was superior in all characteristics. Moreover, it turned out that electric power durability is especially excellent.
[0027]
Example 2 (Reference Example)
First, back conductive films made of Ti (50 nm) / Au (200 nm) and Mg (50 nm) / Al (200 nm) were formed on the back surface of two LiTaO 3 piezoelectric substrates by DC sputtering. The subsequent steps were performed in the same manner as in Example 1. When the state of occurrence of the after-corrosion phenomenon of the obtained SAW element was examined, many corrosions occurred when the back surface conductive film was Ti / Au, and no corrosion occurred when it was Mg / Al.
[0028]
Example 3
The surface conductive film and the back conductive film were set to 200 nm and 300 nm, respectively, and the same operation as in Example 1 was performed except that the same material was used for both films. The materials used were pure Al, Al-1 wt% Mg, Al-2 wt% Mg, Al-3 wt% Mg, Al-4 wt% Mg. The conduction state of the conductive film on the front surface and the back surface of the obtained SAW element was examined.
[0029]
As a result, when the back conductive film of Al-2 wt% Mg, Al-3 wt% Mg, Al-4 wt% Mg was used, conduction was not impaired. When a back surface conductive film of pure Al and Al-1 wt% Mg was used, conduction was lost. Note that no after-corrosion phenomenon occurred in all samples.
[0030]
【The invention's effect】
According to the present invention, in the method of manufacturing a SAW element, it is possible to simultaneously solve the discharge breakdown due to pyroelectricity and the problem of after-corrosion after etching, which have been in a trade-off relationship. As a result, the yield and reliability of the SAW element can be improved.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view of a SAW element of the present invention.
[Explanation of symbols]
A, B Excitation electrode C, D Reflective electrode Y Aperture length λ Electrode cycle
Claims (4)
表面導電膜と裏面導電膜が、同一の材料かつＡｌと２〜４重量％のＭｇとの合金からなる
ことを特徴とする弾性表面波素子の製造方法。A back surface conductive film is formed on the back surface of a substrate having a piezoelectric function on the surface, a surface conductive film is formed on the surface of the substrate to be electrically connected to the back surface conductive film, and then the surface conductive film is patterned into a predetermined shape by etching. ,
Table Menshirube conductive film and the back-surface conductive film, the same material and Al and a method for manufacturing a surface acoustic wave device characterized in that it consists of 2-4% by weight of the alloy of Mg.
表面導電膜と裏面導電膜が、同一の材料かつＡｌと２〜４重量％のＭｇとの合金からなる
ことを特徴とする弾性表面波素子。The surface has a surface conductive film having a predetermined shape and a back conductive film on the front and back surfaces of the substrate having a piezoelectric function,
Table Menshirube conductive film and the back-surface conductive film, the same material and Al and the surface acoustic wave device characterized in that it consists of 2-4% by weight of the alloy of Mg.
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| JP16387499A JP3874967B2 (en) | 1999-06-10 | 1999-06-10 | Surface acoustic wave device and manufacturing method thereof |
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