JP3863786B2 - Semiconductor manufacturing apparatus and semiconductor device manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a manufacturing method of a semiconductor manufacturing apparatus and a semiconductor device that performs heat treatment of the semiconductor wafer.
[0002]
[Prior art]
As one of semiconductor manufacturing processes, there is a heat treatment process for performing oxidation, diffusion, CVD, etc. of a silicon wafer. This step is performed using, for example, a vertical semiconductor manufacturing apparatus as shown in FIG. A conventional vertical semiconductor manufacturing apparatus will be described with reference to FIG.
[0003]
In the vertical semiconductor manufacturing apparatus 1, a soaking tube 3 is provided in a heater 2, and a reaction tube 20 is provided in the soaking tube 3. The soaking tube 3 is made of a material having a high thermal conductivity, for example, a SiC material, and is used to maintain temperature uniformity in the furnace. The heater 2 is covered with a heat insulating material 5.
[0004]
The reaction tube 20 includes a reaction tube main body 4 and a single gas introduction pipe (gas introduction passage) 6. An upper gas introduction pipe 8 is provided on the ceiling plate 7 on the upper side of the reaction tube main body 4, and the shower chamber 9 is constituted by the upper gas introduction pipe 8 and the ceiling board 7. The ceiling plate 7 in the shower chamber 9 is a gas shower plate 11 having a plurality of gas dispersion holes 10, and the shower chamber 9 communicates with the inside of the reaction tube body 4 through the gas shower plate 11.
[0005]
The gas introduction pipe 6 is provided in the vertical direction along the outer surface of the reaction tube main body 4, the gas introduction section 12 is provided at the lower end portion on the upstream side, and the upper end on the downstream side is provided on the reaction tube main body. 4 communicates with a shower chamber 9 provided at the top of the screen.
[0006]
On the other hand, an exhaust pipe 30 is provided in communication with the vicinity of the lower end of the reaction tube main body 4. The gas introduction part 12 of the gas introduction pipe 6 is connected to a reaction gas supply source (not shown), and the exhaust pipe 30 is connected to an exhaust device (not shown).
[0007]
The reaction tube main body 4 is opened at the lower end and serves as an inlet, from which the wafer 41 loaded in the boat 40 is introduced and led out. The boat 40 is raised and lowered by a boat elevator 50 (comprising an arm 51 and a gear 52) to be introduced into the reaction tube main body 4 and taken out from the reaction tube main body 4. The boat 40 is installed on the cap 60, and the cap 60 is provided on the furnace port lid 61. Further, a flange 62 is provided around the lower end of the reaction tube body 4, and the space between the flange 62 and the furnace port lid 61 is sealed with an O-ring 63 when the furnace port lid 61 is closed. Yes. The cap 60 is filled with a heat insulating material 70 (for example, quartz wool).
[0008]
The boat 40 includes four boat columns 42. A plurality of wafers 41 are loaded on the boat column 42 in multiple stages in a horizontal posture, and the wafers 41 are heat-treated in this state.
[0009]
For example, when performing the oxidation process of the wafer 41, the heater 2 and the wafer 41 are heated and held at the oxidation process temperature by the heater 2, and in this state, oxygen gas is supplied to the shower chamber 9 through the gas introduction pipe 12. Dispersed and supplied into the reaction tube main body 4 through the gas dispersion holes 10 of the gas shower plate 11. The oxygen gas and the wafer 41 react to form an oxide film on the surface of the wafer 41. The gas after reacting in the boat 40 is exhausted through the exhaust pipe 30.
[0010]
In order to make the in-plane temperature distribution of the wafer 41 uniform, a mechanism for rotating the boat 40 is provided. That is, the rotary table 81 is attached to the rotary shaft 80 penetrating the furnace opening 61 and the arm 51, and the boat elevator 50 is lifted, so that the rotary table 81 pushes up the bottom of the cap 60 and is directly connected to the rotary shaft 80. The boat 40 rotates by driving.
[0011]
By the way, in the heat treatment of the wafer, the position of the heater and the amount of heat generation are determined so that the temperature distribution of the wafer row in the steady state is as long as possible in the region where the set temperature ± 0.5 ° C. ) Due to heat dissipation toward the end of the wafer row, particularly in the cap direction, a steep temperature distribution is attached. Therefore, a wafer called a dummy wafer, which is not a product, must be inserted at the end of the wafer row. However, since the diameter of the wafer has been increased and the wafer itself is expensive, if it is used as a dummy wafer in the conventional heater structure, the running cost, which is an advantage of the batch method, is offset. Therefore, by providing a heater in the cap portion, heat dissipation from the lower part of the wafer row is compensated, and the downward temperature distribution is reduced. By doing so, the wafer at the end of the wafer row can be processed as a product wafer, and the running cost can be reduced. In addition, a heat insulating material is contained in the cap, but since this increases the heat capacity itself, it takes time to raise and lower the temperature. This hinders high throughput.
[0012]
Therefore, as described in Japanese Patent Publication No. 7-27874, an example in which a heater is arranged inside the lid body, and as disclosed in Japanese Patent Laid-Open No. 9-148315, a quartz heater is arranged on the heat insulating substrate on which the wafer boat is placed. In this way, the heat insulation effect from the heat treatment region to the furnace port is achieved. Further, as described in JP-A-11-97446, a heating lamp is arranged on the arm portion of the lifting mechanism, and a thin plate at the bottom of the boat is heated, so that the temperature rises quickly and the uniformity within the wafer surface is improved. ing.
[0013]
[Problems to be solved by the invention]
However, in the above prior art, the wafer just above the quartz heater is easily affected by the heater pattern of the quartz heater, so it is not uniform, and it is effective to rotate the wafer to make the temperature distribution uniform. If it rotates with a structure, the electric power feeding line to a quartz heater will be twisted. Further, if a heating lamp is installed in the arm portion of the lifting mechanism, the structure of the arm itself becomes complicated and heavy, and the heating lamp is easily cut off, which is difficult in terms of reliability and workability for lamp replacement.
[0014]
An object of the present invention, by also quartz heater in the cap to generate heat, to shorten the Atsushi Nobori time achieving high throughput and prevent heat radiation to the cap downward, soaking all wafer column in the steady state and unnecessary dummy wafer by placing a long interval, further, by rotating the wafer, is to provide a manufacturing method of a semiconductor manufacturing apparatus and semiconductor device with excellent temperature uniformity in the wafer plane.
[0015]
[Means for Solving the Problems]
The object is to provide a semiconductor manufacturing apparatus in which a semiconductor wafer loaded in a boat is inserted and unloaded in a tube axis direction from a lower end opening in a reaction tube provided in a heating furnace, and a heater is provided in a cap at the bottom of the boat. This is achieved by providing a boat rotation mechanism.
[0016]
Further, this is achieved by providing a slip ring for supplying power to the heater.
[0017]
Further, this is achieved by providing a heater and a radiation shield on the side surface of the cap.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a sectional view of a vertical semiconductor manufacturing apparatus showing a first embodiment of the present invention. Here, the same components as those in the conventional semiconductor manufacturing apparatus shown in FIG.
[0019]
In this structure, a plate-like heater 90 formed on a quartz plate or the like is fixed, and the boat 40 loaded with the wafers 41 is rotated. A plate-like heater 90 in the cap 60 is fixed to the arm 51 with a support column 91. The rotary table 81 gripped with the cap 60 can be rotated by being combined with the bearing 94 with the support column 91, the bearing 95 with the furnace cover 61, and the bearing 96 with the arm 51. The motor 82, the rotary shaft 80, the belt 83, and the rotary table 81 are rotated. In this embodiment, the rotation mechanism is provided via the belt 83, but the method of the rotation mechanism is not limited to this.
[0020]
The bearing 96 receives vertical loads of the boat 40, the loaded wafer 41, the boat support 42, the cap 60, and the rotary table 81 in the reaction tube body 4. Power is supplied to the plate-shaped heater 90 through a power supply line 93 that is passed from the power source 92 into the support column 91. In addition, several heat shielding plates (silicon wafer, SiC, or the like) 71 are disposed below the plate-like heater 90 in order to reduce radiant heat loss to the lower portion.
[0021]
After introducing the wafer 41 loaded in the boat 40 into the reaction tube body 4, the plate-shaped heater 90 in addition to the heater 2 can also generate heat, so that the temperature rise time can be shortened and heat radiation in the cap direction can be prevented. All the wafer rows in the steady state can be placed in the soaking length section, and no dummy wafer is required. Further, since the boat 40 is rotated, the in-plane temperature distribution of the wafer 41 becomes uniform. A reference example of the present invention is shown in FIG.
In the embodiment of FIG. 1, a plate-like heater 90 is fixed, and the boat 40 loaded with wafers 41 is rotated. On the other hand, in the reference example shown in FIG. 2, the power supply line 93 is provided inside the rotary shaft 80, the slip ring 97 is provided on the rotary shaft 80, and the power source 92 and the slip ring 97 are connected by the power supply line 98. ing. By doing so, the boat 40 and the plate-like heater 90 are rotated by driving the motor 82 directly connected to the rotating shaft 80, and the plate-like heater 90 is powered by the power source 92, the feed line 98, the slip ring 97, and the feed line. 93 is heated.
[0022]
Yet another embodiment of the present invention is shown in FIG. In the embodiment shown in FIG. 3, in order to further prevent radiant heat loss of the cap 60, a plate-like heater 90 is installed up to the side surface of the cap 60, and a radiation shield 72 is also installed on the cap 60. Thereby, the heat leak to the side surface of the cap can be reduced, and the heat insulation efficiency is further improved.
[0023]
【The invention's effect】
As described above, according to the present invention, the plate-shaped heater in the cap can also generate heat so that the temperature rise time can be shortened and heat radiation to the bottom of the cap can be prevented. And no dummy wafer is required. Furthermore, since the wafer is rotated, it is possible to provide a semiconductor manufacturing apparatus with excellent temperature uniformity within the wafer surface.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a semiconductor manufacturing apparatus illustrating a first embodiment of the present invention.
FIG. 2 is a cross-sectional view of a semiconductor manufacturing apparatus for explaining a reference example of the present invention.
FIG. 3 is a cross-sectional view of a semiconductor manufacturing apparatus for explaining another embodiment of the present invention.
FIG. 4 is a cross-sectional view showing a conventional semiconductor manufacturing apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Vertical type semiconductor manufacturing apparatus, 2 ... Heater, 3 ... Soaking pipe, 4 ... Reaction pipe | tube main body, 5 ... Heat insulating material, 6 ... Gas introduction pipe, 7 ... Ceiling board, 8 ... Upper gas introduction pipe, 9 ... Shower room DESCRIPTION OF SYMBOLS 10 ... Gas dispersion hole, 11 ... Gas shower room, 12 ... Gas introduction part, 30 ... Exhaust pipe, 40 ... Boat, 41 ... Wafer, 42 ... Boat prop, 50 ... Boat elevator, 51 ... Arm, 52 ... Gear, DESCRIPTION OF SYMBOLS 60 ... Cap, 61 ... Furnace cover, 62 ... Flange, 63 ... O-ring, 70 ... Heat insulating material, 71 ... Heat shielding board, 72 ... Radiation shield, 80 ... Rotating shaft, 81 ... Rotary table, 82 ... Motor, 90 ... Plate heater 91, support column, 92, power source, 93 ... feeder, 94 ... bearing, 95 ... bearing, 96 ... bearing, 97 ... slip ring, 98 ... feeder.

Claims (5)

In a semiconductor manufacturing apparatus in which a semiconductor wafer loaded in a boat is inserted and unloaded in a tube axis direction from a lower end opening in a reaction tube provided in a heater of a heating furnace,
A cap on which the boat is installed;
A rotary table for gripping the lower part of the cap;
A plate-like heater that is fixed to the support in the cap and is fed from the upper part of the cap that is fed through a power supply line passing through the support and extends in the lateral direction to the side surface;
A bearing provided between the rotary table and the support column;
A furnace lid that closes the lower end opening;
A bearing provided between the rotary table and the furnace cover;
A rotation mechanism that rotates the boat , the cap, and the turntable while fixing at least the plate-like heater and the support ;
A semiconductor manufacturing apparatus comprising: A boat elevator having an arm for inserting a semiconductor wafer loaded in the boat into a tube axis direction from a lower end opening in the reaction tube;
The semiconductor manufacturing apparatus according to claim 1 , wherein a bearing is provided between the rotary table and the arm . The semiconductor manufacturing apparatus according to claim 1 , wherein a plurality of heat shielding plates are arranged in the cap and below the heater . The semiconductor manufacturing apparatus according to claim 1, wherein the cap is provided with a radiation shield .   A method of manufacturing a semiconductor device using the semiconductor manufacturing apparatus according to claim 1,
  The semiconductor wafer is heat-treated by causing the heater and the plate-like heater to generate heat and rotating the boat, the cap, and the turntable while fixing at least the heater and the support by the rotation mechanism. A method for manufacturing a semiconductor device.

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