JP3785085B2 - Electrostatic deflector and manufacturing method thereof, electrostatic lens and manufacturing method thereof, electron beam irradiation apparatus and cleaning method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
  The present invention is used in an electron beam irradiation apparatus such as an electron beam exposure apparatus and an electron beam microscope using an electron beam.RuThe present invention relates to an electrostatic deflector, an electrostatic lens, a manufacturing method thereof, an electron beam irradiation apparatus, and a cleaning method thereof.
[0002]
[Prior art]
In recent years, as integrated circuits have been miniaturized and densified, exposure methods using charged particle beams such as electron beams and ion beams, or X-rays have been used in place of photolithography technology, which has been the mainstream of fine pattern formation for many years. New exposure methods to be used have been studied and realized.
[0003]
Among them, the electron beam exposure that forms a pattern using an electron beam is in the spotlight because the cross section of the electron beam can be narrowed down to 10 nm and a fine pattern of 0.25 μm or less can be formed. ing. Accordingly, the electron beam exposure apparatus is also required to have stable operation, high throughput, and further fine processability as a semiconductor mass production apparatus.
[0004]
In a conventional typical electron beam exposure apparatus, an objective lens for irradiating a wafer with an electron beam having an appropriately shaped cross section is built in a cylindrical column, and a sample to be exposed (specifically, a wafer) The electrostatic deflector for deflecting the position of the electron beam is disposed substantially integrally with the objective lens (that is, close to each other).
[0005]
  As an electrode of the electrostatic deflector, a cylindrical member made of a non-conductive material, for example, alumina, in which aluminum or phosphor bronze is incorporated and gold is applied to the surface is used.CeramicsIn this cylinder, a NiP surface of the base metal plated with gold is used.
[0006]
In the electron beam exposure apparatus, the inside of the column and the inside of the chamber for the exposure process coupled to the column are usually in a high vacuum state. There is a hydrocarbon-based gas due to evaporation. And this gas and an electron beam react, and the contamination which has carbon as a main component generate | occur | produces.
[0007]
Since this contamination is not a conductor, when electrons hit, charges are accumulated and charge up occurs. Due to this charge-up, the electron beam generates deflection, astigmatism, etc., and the originally required location and shape are different, leading to a reduction in exposure accuracy. Particularly, an electrostatic deflector that controls the position of the electron beam and an electrostatic deflector that controls the shape of the electron beam cause beam drift.
[0008]
Conventionally, when contamination is attached to the electrostatic deflector and the amount of beam drift due to charge-up exceeds a certain level, the contamination attached to the electrostatic deflector is removed by an in-situ cleaning method. In this method, contamination is cleaned by flowing an activation gas containing oxygen as a main component in the vicinity of an object to be cleaned and reacting active oxygen with carbon to perform an ashing treatment.
[0009]
However, the electrostatic deflector is composed of a plurality of stages or has a complicated structure in order to minimize optical aberration. In order to prevent the reflected electrons from flowing into the surface of the deflection electrode, a diaphragm or the like is provided. Therefore, there is a problem that it is difficult to efficiently introduce active oxygen in the vicinity of the deflection electrode to which the contamination is attached.
[0010]
In addition, in the in-situ cleaning method described above, contamination containing carbon as a main component can be removed, but the metal surface is oxidized, an oxide is deposited on the metal surface, and charge accumulates in the oxide. In order to generate a charge-up, the position of the electron beam is changed to deteriorate the exposure accuracy.
[0011]
Therefore, repeated in-situ cleaning with active oxygen can reduce the beam drift due to contamination, but the beam drift due to the oxidation of the electrode surface of the electrostatic deflector increases, increasing the exposure accuracy. Furthermore, there is a problem of deteriorating.
[0012]
  Therefore, a technique for preventing deterioration of exposure accuracy due to oxidation of the electrodes of the electrostatic deflector as described above is disclosed in Japanese Patent Application Laid-Open No. 2000-11937 (hereinafter referred to as a known example). This is because a platinum group metal (ruthenium, rhodium, palladium, osmium, iridium, which is difficult to form a compound with oxygen even if the above-mentioned in-situ cleaning is used on the surface of the conductive ceramic for the electrode of the electrostatic deflector. And platinum)CoveredThe film is formed by plating.
[0013]
  However, in this known technique, a platinum group metalCoveredThe film is gradually etched by a chemical reaction with active oxygen, and when the in-situ cleaning is repeated, the platinum group metalCoveredThere is a problem that the film is finally etched away and loses its antioxidant function.
[0014]
[Problems to be solved by the invention]
However, as described above, in the conventional electron beam exposure apparatus, the electrostatic deflector has a multi-stage configuration or a complicated structure, and is provided with a diaphragm, so that active oxygen is efficiently deflected. There is a problem that it is difficult to introduce in the vicinity of the surface of the electrode.
[0015]
  Further, in a known electron beam exposure apparatus for preventing deterioration of exposure accuracy due to oxidation of the electrode of the electrostatic deflector, a platinum group metal as a deflection electrode is repeatedly obtained while the in-situ cleaning is repeated.CoveredThere is a problem that the film is finally etched away by etching by a chemical reaction with active oxygen and loses its antioxidant function.
[0016]
A first object of the present invention is to use an electrostatic deflector and a manufacturing method thereof, an electrostatic lens and a manufacturing method thereof, an electrostatic deflector, and / or an electrostatic lens capable of easily removing contamination. The present invention provides an electron beam irradiation apparatus and a cleaning method therefor.
[0017]
The second object of the present invention is to realize a state in which the electrode surface of the electrostatic deflector and the electrostatic lens is hardly charged up, and it is possible to maintain high-precision exposure for a long time, and It is an object to provide an electrostatic deflector having an anti-oxidation function on an electrode surface for a long period of time and a manufacturing method thereof, an electrostatic lens and a manufacturing method thereof, an electron beam irradiation apparatus and a cleaning method thereof.
[0018]
[Means for Solving the Problems]
In order to achieve the above object, a first invention according to the present invention (invention 1) includes a cylindrical base material and an inner wall surface of the cylindrical base material formed along a cylindrical axis and electrically connected to each other. A plurality of separated deflection electrodes, a deflection voltage introduction terminal electrically connected to each of the deflection electrodes, and at least one of the upper and lower surfaces of the cylindrical base material from the outer surface to the inside. An electrostatic deflector comprising a reactive gas supply passage extending to the surface.
[0019]
  To achieve the above object, a second invention according to the present inventionThe electronicIn an electron beam irradiation apparatus having an electron gun for generating a beam and an electrostatic deflector for controlling the electron beam, the electrostatic deflector is arranged on a cylindrical base and a cylindrical shaft on an inner wall surface of the cylindrical base. A plurality of deflection electrodes formed along and electrically separated from each other, a deflection voltage introduction terminal electrically connected to each of the deflection electrodes, and an inner side from the outer surface of the cylindrical base material And a reactive gas supply passage extending to at least one of the upper and lower surfaces, and a reactive gas pipe connected to the reactive gas passage of the electrostatic deflector. In the irradiation device.
[0020]
In order to achieve the above object, a third invention according to the present invention (invention 3) includes a cylindrical base material, a lens electrode formed on an inner wall surface of the cylindrical base material along a cylindrical axis, A voltage introduction terminal electrically connected to the lens electrode; and a reactive gas supply passage extending from the outer surface to the inside of the cylindrical base material and extending to at least one of the upper and lower surfaces. It is in the electrostatic lens characterized by this.
[0021]
In order to achieve the above object, a fourth invention according to the present invention is an electron beam irradiation apparatus having an electron gun for generating an electron beam and an electrostatic lens for controlling the electron beam, wherein the electrostatic lens has a cylindrical shape. A base electrode, a lens electrode formed on an inner wall surface of the cylindrical base material along a cylindrical axis, a voltage introduction terminal electrically connected to the lens electrode, and an outer surface of the cylindrical base material from its outer surface A reactive gas supply passage extending inward and extending to at least one of an upper surface and a lower surface; and a reactive gas supply pipe connected to the reactive gas passage of the electrostatic lens. Beam irradiation device.
[0022]
  Said2In the electron beam irradiation apparatus according to the fourth and fourth aspects of the present invention, it is preferable that the reactive gas supply passage extends to the upper and lower surfaces of the electrostatic deflector or the electrostatic lens.
[0023]
  In order to achieve the above object, a fifth invention according to the present invention (invention 6) is formed along a cylindrical axis on a cylindrical base material and an inner wall surface of the cylindrical base material.TheA heater, a plurality of deflection electrodes formed on the heater along the cylinder axis of the cylindrical substrate via an insulating film and electrically separated from each other, and electrically connected to the heater A heater power introduction terminal, a deflection voltage introduction terminal electrically connected to each of the deflection electrodes, andA reactive gas supply passage extending from the outer surface to the inside of the cylindrical substrate and extending to at least one of the upper and lower surfaces;An electrostatic deflector characterized by comprising:
[0024]
  The heater isIn oneIt may be configured, or may be divided into the same number as the deflection electrodes, formed along the cylinder axis of the cylindrical base material, and disposed opposite to each of the deflection electrodes.
[0025]
  To achieve the above object, a sixth invention according to the present invention (claims)8) Is embedded in the cylindrical base material and the cylindrical wall of the cylindrical base material along the cylindrical axis.TheA heater, a plurality of deflection electrodes formed along the cylinder axis on the cylinder inner surface of the cylindrical base material and electrically separated from each other; a heater power introduction terminal electrically connected to the heater; A deflection voltage introduction terminal electrically connected to each of the deflection electrodes;A reactive gas supply passage extending from the outer surface to the inside of the cylindrical substrate and extending to at least one of the upper and lower surfaces;An electrostatic deflector characterized by comprising:
[0026]
The heater is configured by a heater material being embedded in a plurality of through holes provided so as to penetrate the upper and lower surfaces of the cylindrical wall, and adjacent heater materials connected in series on the upper and lower surfaces of the cylindrical wall. Is desirable.
[0027]
Moreover, it is desirable to further provide a cavity along the cylinder axis in the cylinder wall portion of the electrode substrate between the outer surface of the electrode substrate and the heater.
[0028]
The electrode base material preferably has a fin structure in which a cylindrical wall portion between the outer surface and the heater is removed in the cylindrical axis direction.
[0029]
  To achieve the above object, a seventh invention according to the present invention (claim 1)2) Is a first step of forming a groove in the inner wall of the cylindrical base material, a second step of forming a heater by embedding a high resistance material in the groove, and an inner wall of the cylindrical base material including the heater upper surface A third step of forming an insulating film on the insulating film; a fourth step of forming a plurality of deflection electrodes on the insulating film along the cylindrical axis of the cylindrical substrate; and electrically connecting to the heater. A fifth step of forming a heater power introduction terminal; and a sixth step of forming a deflection voltage introduction terminal electrically connected to the deflection electrode.It is characterized byThe method is for forming an electrostatic deflector.
[0030]
The groove in the first step and the heater in the second step are formed in each region divided into a plurality along the cylindrical axis of the cylindrical base material, and the fourth deflection electrode is the heater. It is desirable to form the same number as that of the heater and relative to the heater.
[0031]
  To achieve the above object, an eighth invention according to the present invention (Claim 1).4) Is formed along the cylindrical axis of the cylindrical base material, a heater formed on the inner wall surface of the cylindrical base material along the cylindrical axis, and an insulating film on the heater Lens electrode, heater power introduction terminal electrically connected to the heater, and electrically connected to the lens electrodelensA voltage introduction terminal;A reactive gas supply passage extending from the outer surface to the inside of the cylindrical base material and extending to at least one of the upper and lower surfaces;The electrostatic lens is characterized by comprising:
[0032]
  To achieve the above object, a ninth invention (Claim 1).5) Is a cylindrical base material, a heater embedded in the cylindrical wall of the cylindrical base material along the cylindrical axis, and a lens electrode formed on the cylindrical inner surface of the cylindrical base material along the cylindrical axis; A heater power introduction terminal electrically connected to the heater; a lens voltage introduction terminal electrically connected to the lens electrode;A reactive gas supply passage extending from the outer surface to the inside of the cylindrical substrate and extending to at least one of the upper and lower surfaces;The electrostatic lens is characterized by comprising:
[0033]
The heater is configured by a heater material being embedded in a plurality of through holes provided so as to penetrate the upper and lower surfaces of the cylindrical wall, and adjacent heater materials connected in series on the upper and lower surfaces of the cylindrical wall. Is desirable.
[0034]
Moreover, it is desirable to further provide a cavity along the cylinder axis in the cylinder wall portion of the electrode substrate between the outer surface of the electrode substrate and the heater.
[0035]
The electrode base material preferably has a fin structure in which a cylindrical wall portion between the outer surface and the heater is removed in the cylindrical axis direction.
[0036]
  To achieve the above object, a tenth invention according to the present invention (claims)19) Is a first step of forming a groove in the inner wall of the cylindrical base material, a second step of forming a heater by embedding a high resistance material in the groove, and an inner wall of the cylindrical base material including the heater upper surface A third step of forming an insulating film on the insulating film; a fourth step of forming a lens electrode on the insulating film along a cylindrical axis of the cylindrical substrate; and a heater power introduction terminal electrically connected to the heater. A fifth step of forming, and a sixth step of forming a voltage introduction terminal electrically connected to the lens electrode.It is characterized byThe method is for forming an electrostatic lens.
[0037]
  In order to achieve the above object, an eleventh invention according to the present invention (Claim 2).0) Is an electron beam irradiation apparatus having an electron gun for generating an electron beam and an electrostatic deflector for controlling the electron beam, the electrostatic deflector comprising a cylindrical base material and an inner wall surface of the cylindrical base material A heater formed along the cylinder axis, a plurality of deflection electrodes formed on the heater along the cylinder axis of the cylindrical substrate via an insulating film, and electrically separated from each other, and the heater A heater power introduction terminal electrically connected, a deflection voltage introduction terminal electrically connected to each of the deflection electrodes, andA reactive gas supply passage extending from the outer surface to the inside of the cylindrical substrate and extending to at least one of the upper and lower surfaces;An electron beam irradiation apparatus comprising:
[0038]
  To achieve the above object, a twelfth aspect of the present invention (claim 2).1) Is an electron beam irradiation apparatus having an electron gun for generating an electron beam and an electrostatic lens for controlling the electron beam. The electrostatic lens is formed of a cylindrical base material and a cylindrical member on an inner wall surface of the cylindrical base material. A heater formed along the axis; a lens electrode formed on the heater along the cylinder axis of the cylindrical base material through an insulating film; and a heater power introduction terminal electrically connected to the heater And electrically connected to the lens electrodelensA voltage introduction terminal;A reactive gas supply passage extending from the outer surface to the inside of the cylindrical substrate and extending to at least one of the upper and lower surfaces;An electron beam irradiation apparatus comprising:
[0039]
  To achieve the above object, a thirteenth invention according to the present invention (claim 2).2) In the state where the normal operation of the electron beam irradiation apparatus according to the eleventh or twelfth invention is stopped,Reactive gas supply passageThe electron beam irradiation apparatus is characterized in that contamination introduced to the electrostatic deflector or the electrostatic lens is removed by heating the electrostatic deflector or the heater of the electrostatic lens. There is a cleaning method.
[0040]
  To achieve the above object, a fourteenth invention according to the present invention (claim 2).3) During the normal operation of the electron beam irradiation apparatus according to the eleventh or twelfth invention,Reactive gas supply passageThe electrostatic deflector or the electrostatic lens heater is heated to adhere to the electrostatic deflector or the electrostatic lens.TheThe present invention provides a cleaning method for an electron beam irradiation apparatus, characterized by removing contamination.
[0049]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments (hereinafter referred to as embodiments) according to the present invention will be described with reference to the drawings. Each embodiment is an example in which the present invention is applied to an electron beam exposure apparatus.
[0050]
(First embodiment)
First, an electron beam exposure apparatus according to the first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a basic block diagram of an electron beam exposure apparatus according to the first embodiment of the present invention.
[0051]
As shown in FIG. 1, in an electron beam apparatus, a chamber 11 houses a movable stage 13 on which a sample 11 such as a semiconductor wafer (hereinafter referred to as a wafer) and a mark table 12 are placed. The movable stage 13 is moved by the stage control circuit 121 in the X (left and right direction on the paper surface) and Y direction (perpendicular to the paper surface).
[0052]
A cylindrical column 20 connected to the chamber 10 is provided above the chamber 10. An electron gun 21 that emits an electron beam 22 is attached to the end of the column 20.
[0053]
  The current density of the electron beam 22 emitted from the electron gun 21 is adjusted by a condenser lens 23 to uniformly illuminate the first shaping aperture 24. The image of the first shaping aperture 24 is converted into a CP aperture by the projection lens 25.26 topIs imaged.
[0054]
The degree of optical overlap between the two apertures 24 and 26 is controlled by a CP selective deflector 27.
[0055]
This beam shaping mechanism comprises a CP selection deflector 27, a CP selection circuit 118, and a control computer 122 that sends deflection data to the CP selection circuit 118.
[0056]
An image resulting from the optical overlap of the first shaping aperture 24 and the CP aperture 26 is reduced by the reduction lens 28 and the objective lens 29 and formed on the wafer 11.
[0057]
The position of the electron beam 22 on the surface of the wafer 11 is set by applying a necessary voltage to the objective deflector 30 by a beam deflection circuit 119 and deflecting the voltage.
[0058]
The position of the electron beam 22 on the wafer 11 is controlled by a pattern data decoder 123 that sends data and the beam deflection circuit 119 that applies a voltage to the objective deflector 30.
[0059]
Irradiation of the electron beam 22 can select the wafer 11 or the mark stage 12 for measuring the electron beam size by moving the movable stage 13.
[0060]
Further, when the position of the electron beam 22 on the wafer 11 is moved, the electron beam 22 is blanked by a blanking deflector 31 so that the electron beam 22 is not exposed to an unnecessary place on the wafer 11. The beam is deflected onto the aperture 32 to cut the electron beam 22 so that it does not reach the surface of the wafer 11.
[0061]
The deflection voltage to the blanking deflector 31 is controlled by the control computer 122 and the blanking deflection circuit 116.
[0062]
All these data are stored in the pattern data memory 124. In the figure, 33 is a detector, 117 is a lens control circuit, and 120 is a detection signal processing circuit for processing a detection signal from the detector 33.
[0063]
In the above-described electron beam drawing apparatus, the CP selective deflector 27 and the objective deflector 30 need to deflect the electron beam 22 with high accuracy and at high speed, and an electrostatic deflector is used.
[0064]
Although not shown, the objective deflector 30 is provided with a main deflector, a sub deflector, and a plurality of deflection electrodes in order to minimize the deflection aberration because of the throughput and high accuracy.
[0065]
Next, the configuration of the electrostatic deflector in the present embodiment will be described in detail with reference to FIGS. 2A is a perspective view showing an external configuration of the electrostatic deflector, FIG. 2B is a top view of the electrostatic deflector, and FIG. 2C is taken along line AA ′ in FIG. FIG. 3 is a longitudinal sectional view taken along line BB ′ in FIG. 2B, and the deflection electrode and the deflection voltage terminal are omitted.
[0066]
  As shown in FIG. 2, the electrode deflection substrate 60 is made of alumina, ceramics, conductive ceramics, or the like.Material ofAnd is formed in a cylindrical shape.
[0067]
  On the inner wall surface of the cylindrical electrode substrate 60, a plurality of, for example, eight deflection electrodes 61 are provided.₁~ 61₈Are formed in the same shape, and the cylinder shaft pairNameAnd are fixedly separated from each other electrically.
[0068]
  Each deflection electrode 61i (i = 1 to 8) is a metal for preventing charge-up due to metal oxidation on the surface of NiP as a base metal 63 by plating inside an electrode base 60 made of alumina, for example.CoveredThe film 62 is plated with gold. Also, the conductive ceramic is ground and the metal is applied to the surface.CoveredThe film 62 is plated with a platinum group. Further, a copper thin film as a base metal 63 is plated inside the electrode base 60 made of ceramics or conductive ceramics, and the metal is further formed on the surface thereof.CoveredAs membrane 62Ruthenium oxideIt is given.
[0069]
A through-hole 66 reaching the deflection electrode 61i is formed in a side surface portion of the electrode base 60 facing the deflection electrode 61i.₁~ 66₈Are provided.
[0070]
Then, the deflection voltage introduction terminal 65 is passed through each of the through holes 66i (i = 1 to 8).₁~ 65₈Are electrically connected to each deflection electrode 61i.
[0071]
Each deflection voltage introduction terminal 65i has a laminated structure of a copper layer 67 and a gold layer 68 formed on the inner wall surface of each through hole 66i.
[0072]
Further, as shown in FIG. 3, a gas supply passage 70 is formed on the side surface portion of the electrode base material 60 between the deflection electrode terminals 65 i (i = 1 to 8) from the outer surface of the electrode base material 60. It is formed so as to extend in the axial direction to a substantially central portion of the cylinder thickness and to communicate with at least one of the upper and lower surfaces of the electrode substrate 60 along the cylinder axis. In this embodiment, it is provided so as to branch in the vertical direction of the electrode base material 60 at the center of the tube thickness and reach the upper and lower surfaces of the electrode base material 60.
[0073]
FIG. 4 is a schematic diagram illustrating an example of an electrostatic deflector configured by combining a plurality of the above-described electrostatic deflectors alone.
[0074]
That is, the electrostatic deflector unit 50 and the shield 80 shown in FIGS. 2 and 3 are assembled into the holder 85 with high accuracy. These are combined in a plurality of stages, for example, three stages to constitute an electrostatic deflector as shown in FIG. 4, for example, the CP selective deflector 27 or the objective deflector 30 shown in FIG. The shield 80 is made of a non-magnetic metal such as titanium and is not shown, but is supplied with a ground potential.
[0075]
  Each of these electrostatic deflectorsSimple substance50 reactive gasesServingA reactive gas supply pipe 90 connected to a reaction gas supply system (not shown) is connected to the supply passage 70.
[0076]
Next, a cleaning method for an electron beam exposure apparatus incorporating the above-described electrostatic deflector will be described.
[0077]
  First, as a first cleaning method, the normal operation of the electron beam exposure apparatus is stopped, and active oxygen gas G is supplied to the reactive gas supply pipe 90 from a reactive gas supply system provided outside the apparatus. The active oxygen gas G supplied to the reactive gas supply pipe 90 is led out to the upper and lower surfaces of each electrode base material 60 by the reactive gas supply passage 70, and further along the upper and lower surfaces of the electrode base material 60. Each electrostatic deflector introduced in the cylinder axis directionSimple substance50 is introduced inside.
[0078]
  And each electrostatic deflectorSimple substanceContamination adhered to the inner surface of 50 deflection electrodesReaction with active oxygenTo remove the contamination. The gas after the reaction is discharged outside the apparatus by an exhaust system (not shown).
[0079]
  Further, as a second cleaning method, in a state in which the electron beam exposure apparatus is normally operated, each of the reactive gas supply pipes 90 is supplied with active oxygen gas G from a reactive gas supply system outside the apparatus. Electrostatic deflectorSimple substanceContamination adhered to the inner surface of 50 deflection electrodesReaction with active oxygenTo remove the contamination. In this way, in a state where the device is normally operated,DEven if the operation is performed, the operation of the apparatus is not particularly affected.
[0080]
According to the configuration of the electrostatic deflector according to the above embodiment, the active oxygen gas can be directly introduced near the inner surface of the electrostatic deflector, so that carbon contamination adhering to the surface of the deflecting electrode is efficiently removed. can do.
[0081]
Therefore, it is possible to supply an electrostatic deflector that realizes a state in which the surface of the deflection electrode is not charged up and can maintain highly accurate drawing for a long time.
[0082]
In addition, in an electron beam exposure apparatus using such an electrostatic deflector, highly accurate drawing can be maintained for a long time.
(Second Embodiment)
Next, an electron beam exposure apparatus according to the second embodiment of the present invention will be described. The basic configuration of the electron beam exposure apparatus is the same as that shown in FIG. 1 of the first embodiment. Description of the electrostatic deflector that is different from that of the first embodiment will be described with reference to FIG. FIG. 5 is a schematic diagram showing the configuration of an electrostatic deflector having a plurality of stages of electrostatic deflectors.
[0083]
The present embodiment and the first embodiment are different from each other in the first embodiment in that, as shown in FIG. In this embodiment, an electrostatic deflector having a plurality of stages of electrostatic deflection parts that are partitioned by a shield by processing the electrode substrate is integrated. This is different in this respect. The configuration other than this point is the same as the configuration of the first embodiment.
[0084]
  That is, as shown in FIG. 5, an annular groove 310 about the cylinder axis is formed on the inner wall surface of the cylindrical electrode substrate 300.Multiple formationThe annular groove 310 forms a structure in which the shield portions 320 and the deflector unit portions 330 are alternately arranged.
[0085]
A shield electrode 321 is formed on each inner wall surface of the shield portion 320, and a deflection electrode 331 is formed on each inner wall surface of the deflector unit portion 330. Here, the shield electrode 321 and the deflection electrode 331 are formed in the same configuration, and for example, a ruthenium oxide metal film is formed on a copper base metal, as in the first embodiment. .
[0086]
Further, shield electrode terminals 322 that are electrically connected to the shield electrode 321 are respectively provided on the side surface portions of the shield portions 320, and the deflection electrode 331 is electrically connected to the side surface portion of each deflector unit portion 330. A deflection voltage introduction terminal 332 connected to each is formed. The shield electrode terminal 322 and the deflection voltage introduction terminal 332 are formed by plating a copper layer and a gold layer in the through hole as in the first embodiment.
[0087]
Further, in the deflector unit portion 330, as in the first embodiment, a gas supply passage 333 extends from the outer surface to the substantially central portion of the cylinder thickness in the cylinder axis direction, and extends along the cylinder axis. The deflector unit portion 330 is provided so as to diverge in the vertical direction at at least one of the upper and lower surfaces, here the central portion of the tube thickness, and reach the upper and lower surfaces.
[0088]
  The gas supply passage 333Since the gas supply passage is also formed in the shield portion 320 at the time of forming, the gas supply passage in the shield portion 320 located on the outermost side of the electrostatic deflector is sealed with a ceramic lid 323 for cleaning. This prevents the outflow of reactive gas from the outside.
[0089]
First, the electrostatic deflector is manufactured for a shield electrode terminal and a deflection voltage introduction terminal that reach the inner surface of the cylinder at predetermined positions on the side surface of the cylindrical electrode substrate 300 by mechanical processing such as an end mill. After the through hole is formed, the inside of the electrode substrate 300 is protected with a protective material, and a copper layer and a gold layer are plated in the through hole to form the shield electrode terminal 322 and the deflection voltage introduction terminal 332. .
[0090]
Next, a vertical gas supply passage 333 passing through the upper and lower surfaces of the cylindrical electrode base material 300 is formed at a predetermined position on the cylindrical wall of the cylindrical electrode base material 300 along the cylindrical axis. A horizontal gas supply passage 333 that communicates with the gas supply passage 333 in the vertical direction is formed at a predetermined position on the side surface of the substrate 300 in the cylinder axis direction.
[0091]
Next, after removing the protective member and protecting the gas supply passage 333 portion and the electrode terminals 322 and 332 portions, the inner wall surface of the cylindrical electrode substrate 300 is grounded by, for example, electroless plating. A metal, for example, a copper thin film is formed, a ruthenium film is formed on the base metal by electroplating, and heat treatment is performed to form a metal film, for example, ruthenium oxide.
[0092]
  Next, rotate it around the cylinder axis using a grooved bar like a bowl.Multiple grooves310 is formed to form alternately arranged shield portions 320 and deflector unit portions 330. At the same time, an annular shield electrode 321 made of a laminated film of copper film and ruthenium oxide is formed on the inner wall surface of the shield portion 320.
[0093]
Next, for example, by machining, on the inner wall surface of each deflector unit portion 330, the laminated film of the ruthenium oxide film and the copper thin film is divided into eight along the cylinder axis with a predetermined interval, Each deflection electrode 331 is formed.
[0094]
Thereafter, the protective film is removed to produce an electrostatic deflector as shown in FIG.
[0095]
  Embodiment aboveofAccording to the configuration, as in the first embodiment, carbon contamination attached to the surface of the deflection electrode can be efficiently removed, so that the surface of the deflection electrode is not charged up. It is possible to supply an electrostatic deflector that can maintain high-precision drawing for a long time.
[0096]
In addition, in an electron beam exposure apparatus using such an electrostatic deflector, highly accurate drawing can be maintained for a long time.
[0097]
(Third embodiment)
Next, an electron beam exposure apparatus according to the third embodiment of the present invention will be described. The basic configuration of the electron beam exposure apparatus is the same as that shown in FIG. 1 of the first embodiment. Description of the electrostatic deflector that is different from that of the first embodiment will be described.
[0098]
6A and 6B are diagrams showing an electrostatic deflector according to the third embodiment. FIG. 6A is a perspective view showing an external configuration of the electrostatic deflector, and FIG. FIG. 7A is a top view of the deflector, FIG. 7A is a longitudinal sectional view taken along the line CC ′ in FIG. 6B, and FIG. 7B is a diagram schematically showing the configuration of the heater.
[0099]
  That is, as shown in the figure, the electrode substrate 100 is made of alumina, ceramics, conductive ceramics, etc.Material ofAnd is formed in a cylindrical shape.
[0100]
A plurality of, for example, eight heaters 130 are provided on the inner wall surface of the electrode substrate 100.₁~ 130₈Are formed in the same shape, and are arranged and fixed in a cylindrical axis symmetry and electrically separated from each other.
[0101]
On each heater 130i (i = 1 to 8), an insulating film 131 is provided.₁~ 131₈Are formed in the same shape and arranged separately from each other symmetrically with respect to the cylinder axis.
[0102]
On each of the insulating films 131i (i = 1 to 8), eight deflection electrodes 101 are respectively provided.₁~ 101₈Are formed in the same shape, and are arranged and fixed electrically separated from each other symmetrically with respect to the cylinder axis.
[0103]
  In this embodiment, each deflection electrode 101i is formed of the metal for preventing charge-up due to metal oxidation on the surface of the copper thin film as the base metal 103.CoveredRuthenium oxide is formed as the film 102. The deflection electrode 101i is not limited to this, but a metal made of gold on the NiP base metal surface.CoveredA film may be used. In addition, as a metal film, oxidationLuteNot limited to titanium, Ti or platinum-based metals may be used.
[0104]
A through hole 106 that penetrates through each insulating film 131i and reaches each deflection electrode 101i is formed in a side surface portion of the electrode substrate 100 that faces each deflection electrode 101i (i = 1 to 8).₁~ 106₈And each deflection voltage introduction terminal 105 is provided.₁~ 105₈Are electrically connected to each deflection electrode 101i via each through hole 106i (i = 1 to 8).
[0105]
Each deflection voltage introduction terminal 105i has a laminated structure of a copper layer 107 and a gold layer 108 formed on the inner wall surface of each through hole 106i.
[0106]
A through-hole 136 reaching each heater 130 i is formed in a side surface portion of the electrode substrate 100 facing each heater 130 i.₁~ 136₈Each heater power introduction terminal 135 is provided₁~ 135₈Are electrically connected to each heater 130i through each through hole 136i (i = 1 to 8).
[0107]
Each heater power introduction terminal 135i has a laminated structure of a copper layer 107 and a gold layer 108 formed on the inner wall surface of each through hole 136i.
[0108]
Next, a method for manufacturing the electrostatic deflector will be described with reference to FIGS. 8 and 9 are schematic views of the main part showing the manufacturing process of the electrostatic deflector.
[0109]
First, the conductive ceramic is ground to form a cylindrical electrode substrate 100 having good concentricity and roundness, and then a plurality of inner surfaces of the cylindrical electrode substrate 100 are arranged along the cylinder axis, for example, 8 A groove 140 that has a shape of a predetermined heater is formed on each divided virtual surface by moving a groove-like grooved bar vertically and horizontally (FIG. 8A).
[0110]
Next, a heater material such as boron nitride 141 is formed on the entire inner wall of the electrode base material 100 by plating, sputtering, vapor deposition, or the like so as to fill the groove 140 (FIG. 8B). ). Further, the method of forming the heater material is not limited to the above plating method, sputtering method, and vapor deposition method.
[0111]
Next, the heater material 141 is left in the groove 140, the heater material 141 on the inner wall surface of the electrode substrate 100 is removed, and then the heater material 141 is sintered to form the heater 130i ( FIG. 8 (c)). The heater material 141 may be formed by sintering so that only the heater material 141 embedded in the groove 140 remains.
[0112]
Then, an insulating film 131 such as an oxide film is formed on the entire inner wall surface of the electrode substrate 100 including the surface of the heater 130i by sputtering or vapor deposition (FIG. 8D).
[0113]
  Next, the electrodeBaseA base metal 103, for example, a copper thin film is formed on the insulating film 131 on the inner wall surface of the material 100 by, for example, electroless plating. Further, a ruthenium film is formed on the base metal 103 by electroplating to form a metal film 102, for example, ruthenium oxide (FIG. 9E).
[0114]
Thereafter, for example, by mechanical processing, the laminated film of the ruthenium oxide film 102, the copper thin film 103, and the insulating film 131 is divided into eight along the cylinder axis with a predetermined interval with high accuracy, and each of the deflection electrodes 101i and Each heater 130i is formed (FIG. 9F).
[0115]
Next, a through-hole 106 for a deflection voltage introduction terminal that penetrates each insulating film 131i and reaches the copper thin film 103 of each deflection electrode 101i in a side surface portion facing each deflection electrode 101i in the electrode base material 100.₁~ 106₈In addition, through holes 136i for heater power introduction terminals reaching the grooves 140 of the heaters 130i are formed on the side surfaces of the both ends of the heaters 130i facing the grooves 140, respectively. Thereafter, the surface of the deflection electrode 101i in the electrode substrate 100 is covered with a protective member such as a resist.
[0116]
Next, a copper layer 107 having a thickness of about 1.0 μm is plated on the inner wall surface of the through hole 106 i for the deflection electrode introduction terminal and the through hole 136 i for the heater power introduction terminal, and further, the thickness is about 0.5 μm. The gold layer 108 is plated to produce a deflection voltage introduction terminal 105i electrically connected to the copper thin film 103 of the deflection electrode 101i and a heater power introduction terminal 135i electrically connected to the heater 130i. Then, the electrostatic deflector as shown in FIG. 6 is produced by removing the protective film.
[0117]
The through-hole 106i for the deflection electrode introduction terminal and the through-hole 136i for the heater power introduction terminal do not need to be after the formation process of the heater 130i, the insulating film 131i, and the deflection electrode 101i. It may be formed in advance after the electrode substrate 100 is formed. In this case, in the subsequent process of forming the heater 130i, the insulating film 131i, and the deflection electrode 101i, the material may be covered with a protective member such as a resist so that the respective materials do not adhere. Then, after the formation process of the heater 130i, the insulating film 131i, and the deflection electrode 101i, this member may be removed so that the through hole 106i for the deflection electrode introduction terminal reaches the back surface of the deflection electrode.
[0118]
Next, a cleaning method for the electron beam exposure apparatus will be described.
[0119]
First, as a first cleaning method, the normal operation of the electron beam exposure apparatus is stopped, the heater is heated, and activated from a reactive gas supply system provided outside the apparatus through a reactive gas supply pipe. Oxygen gas is supplied in the vicinity of the electrostatic deflector. The supplied active oxygen gas is introduced into the cylinder of the electrostatic electrode.
[0120]
Since the deflection electrode is heated by the heater, the contamination adhering to the surface of each deflection electrode is promoted by the reaction between active oxygen and carbon, and is efficiently removed by washing. The gas after the reaction is discharged outside the apparatus by an exhaust system (not shown).
[0121]
As a second cleaning method, active oxygen is supplied from a reactive gas supply system outside the apparatus through the reactive gas supply pipe in a state where the electron beam exposure apparatus is normally operated and a heater is heated. Gas is supplied in the vicinity of the electrostatic deflection electrode. The supplied active oxygen gas is introduced into the cylinder of the electrostatic electrode.
[0122]
  Since the deflection electrode is heated by the heater, the contamination adhering to the surface of each deflection electrode is promoted by the reaction between active oxygen and carbon, and is efficiently removed by washing. The gas after the reaction is discharged outside the apparatus by an exhaust system (not shown). In this way, in a state where the device is normally operated,DEven if the operation is performed, the operation of the apparatus is not particularly affected.
[0123]
According to the configuration of the electrostatic deflector according to the above embodiment, since the deflection electrode of the electrostatic deflector is configured to be heated by the heater provided on the back surface thereof, other components are thermally affected. Without giving, carbon contamination adhering to the surface of the deflection electrode can be efficiently removed because the reaction between the active oxygen of the reaction gas and carbon is promoted.
[0124]
Therefore, it is possible to supply an electrostatic deflector that realizes a state in which the surface of the electrostatic electrode is not charged up and can maintain high-precision drawing for a long time.
[0125]
In addition, in an electron beam exposure apparatus using such an electrostatic deflector, highly accurate drawing can be maintained for a long time.
[0126]
Further, in this embodiment, the heater is divided into eight parts with respect to the eight-part deflecting electrode. However, there is no problem even if the number of heaters is one, and the number is not limited.
In this embodiment, the insulating film is divided along with the division of the deflection electrode and the heater, but it is needless to say that the division may not be performed.
(Fourth embodiment)
Next, an electron beam exposure apparatus according to the fourth embodiment of the present invention will be described. The basic configuration of the electron beam exposure apparatus is the same as that shown in FIG. 1 of the first embodiment. Description of the electrostatic deflector that is different from that of the first embodiment will be described.
[0127]
Hereinafter, the configuration of the electrostatic deflector according to this embodiment will be described in detail with reference to FIGS. 10 to 12. 10 is a perspective view showing an external configuration of the electrostatic deflector, FIG. 11A is a top view of FIG. 10, FIG. 11B is a bottom view of FIG. 10, and FIG. It is a longitudinal cross-sectional view which follows the DD 'line of).
[0128]
  As shown in FIGS. 10 and 11, the electrode substrate 200 is made of alumina, ceramics, conductive ceramics, or the like.Material ofAnd is formed in a cylindrical shape.
[0129]
  On the inner wall surface of the cylindrical electrode substrate 200, a plurality of, for example, eight deflection electrodes 201 are provided.₁~ 201₈Are formed in the same shape, and the cylinder shaft pairNameAnd are fixedly separated from each other electrically.
[0130]
  Each deflection electrode 201i (i = 1 to 8) is a metal for preventing charge-up due to metal oxidation on the surface of NiP as a base metal 203 by plating inside an electrode base material 200 made of alumina, for example.CoveredThe film 202 is plated with gold. Also, the conductive ceramic is ground and the metal is applied to the surface.CoveredThe film 202 is plated with a platinum group. Alternatively, aluminum or phosphor bronze is ground and the metal is applied to the surface.CoveredA film 202 plated with gold is disposed inside an electrode substrate 200 made of alumina. Further, a copper thin film as a base metal 203 is plated inside the electrode base material 200 made of ceramics or conductive ceramics, and the metal is further formed on the surface thereof.CoveredAs membrane 202Ruthenium oxideIt is given.
[0131]
A through-hole 206 reaching the deflection electrode 201 i is formed in a side surface portion of the electrode substrate 200 facing the deflection electrode 201 i.₁~ 206₈Are provided.
[0132]
The deflection voltage introduction terminal 205 is passed through each of the through holes 206i (i = 1 to 8).₁~ 205₈Are electrically connected to each deflection electrode 201i.
As shown in FIG. 12, each deflection voltage introduction terminal 205i has a laminated structure of a copper layer 207 and a gold layer 208 formed on the inner wall surface of each through hole 206i.
[0133]
  Further, a heater 230 is embedded in the cylindrical wall of the electrode substrate 200. The heater 230 includes a plurality of, for example, 16 heater materials 230 made of a nonmagnetic material such as boron nitride.₁~ 230₁₆For example, two heater materials 230i are provided for each deflection electrode 201i.ZAre arranged symmetrically along the cylinder axis across the deflection voltage introduction terminal 205i, and penetrate the cylinder of the electrode substrate 200 and are exposed on the upper and lower surfaces. Of course, it is not necessary to prepare the number of heater materials 230 that is a multiple of the number of divided deflection electrodes 201.
[0134]
Further, on the upper surface of the electrode base material 200, for example, the heater material 230₁And 230₂Is provided with a heater power introduction terminal 235, and the other two adjacent heater materials 230i are dug into a groove between the heater materials 230i and electrically connected with a low resistance metal or the like embedded in the groove. Further, on the lower surface of the electrode base material 200, two adjacent heater materials 230i different from the case of the upper surface dig a groove between the heater materials 230i, and a low-resistance metal or the like embedded in the groove. Thus, the heater 230 is configured by electrically connecting the heater materials 230i in series.
[0135]
As shown in FIG. 10, the heater power terminal 235 is not necessarily provided on the upper surface of the cylinder of the electrode substrate 200, and may be provided on the lower surface of the cylinder, the side surface, or a combination thereof.
[0136]
The deflection electrode 201 and the heater 230 are preferably electrically insulated by the electrode base material 200 with a resistance value of 5 MΩ or more.
[0137]
Next, a method for manufacturing the electrostatic deflection electrode will be described.
[0138]
First, the conductive ceramics is ground to form a cylindrical electrode substrate 200 having good concentricity and roundness, and then the upper and lower surfaces are formed on the cylindrical wall of the cylindrical electrode substrate 200 by mechanical processing or the like. A plurality of, for example, 16 through-holes penetrating through are formed symmetrically along the cylinder axis. Here, as shown in FIG. 11, the through holes are provided symmetrically in the vertical direction. However, the through holes are not necessarily provided symmetrically in the vertical direction. For example, the through holes may be formed obliquely from the upper surface to the lower surface.
[0139]
Next, after the heater material 230i, for example, boron nitride, is embedded in the through hole by plating, sputtering, vapor deposition, or the like, the heater material 230i is sintered. The method of embedding the heater material 230i is not limited to the plating method, the sputtering method, and the vapor deposition method. For example, the sintered heater material 230i may be processed with high accuracy and placed in the through hole without a gap.
[0140]
Then, a base metal 203, for example, a copper thin film, is formed on the entire inner wall surface of the electrode substrate 200 by, for example, electroless plating by sputtering, vapor deposition, or the like. Further, a ruthenium film is formed on the base metal 203 by electroplating, and heat treatment is performed to form a metal film 202, for example, ruthenium oxide.
[0141]
After that, for example, by mechanical processing, the laminated film of the ruthenium oxide film 202 and the copper thin film 203 is divided into eight along the cylinder axis with a predetermined interval with high accuracy to form each deflection electrode 201i.
[0142]
Next, a through-hole for a deflection voltage introduction terminal that reaches the copper thin film 203 of each deflection electrode 201i in the side surface portion that faces each deflection electrode 201i in the electrode base material 200 and is located between the heater materials 230i. 206₁~ 206₈Form.
[0143]
Next, a copper layer 207 having a film thickness of about 1.0 μm is plated on the inner wall surface of the through hole 206i for the deflection electrode introduction terminal, and further, a gold layer 208 having a film thickness of about 0.5 μm is plated. Each of the deflection voltage introduction terminals 205i electrically connected to the copper thin film 203 of the electrode 201i is produced. Thereafter, predetermined heater members 230i are electrically connected to each other on the upper and lower surfaces of the electrode base material 200, and for example, the heater material 230 is formed on the upper surface.₁And 230₂Is provided with a heater power introduction terminal 235 to produce an electrostatic deflector as shown in FIGS.
[0144]
The through hole 206i for the deflection electrode introduction terminal does not need to be after the step of forming the deflection electrode 101i, and may be formed in advance after the formation of the cylindrical electrode substrate 200, for example. In this case, in the subsequent process of forming the heater material 230i and the deflection electrode 201i, the material may be covered with a protective member such as a resist so that each material does not adhere. Then, after the heater material 230i and the deflection electrode 201i are formed, this member may be removed to provide the deflection electrode introduction terminal 205i.
[0145]
Further, the through hole 236i for embedding the heater material does not need to be before the step of forming the deflection electrode 201i and the deflection electrode introduction terminal 205i, for example, after the step of forming the deflection electrode 201i and the deflection electrode introduction terminal 205i. It may be formed. In this case, in the process of forming the heater material 230i, the surfaces of the deflection electrode 201i and the deflection electrode terminal 205i may be covered with a protective member such as a resist so that the heater material does not adhere. And this member should just be removed after the formation process of the said heater material 230i.
[0146]
As in the case of the third embodiment, the cleaning method of the electron beam exposure apparatus is as follows. First, the normal operation of the electron beam exposure apparatus is stopped and the heater is heated. The active oxygen gas is supplied to the vicinity of the electrostatic deflector through a reactive gas supply pipe from a reactive gas supply system provided outside the apparatus.
[0147]
As a second cleaning method, active oxygen is supplied from a reactive gas supply system outside the apparatus through the reactive gas supply pipe in a state where the electron beam exposure apparatus is normally operated and a heater is heated. This is done by supplying gas in the vicinity of the electrostatic deflection electrode.
[0148]
In any of the above cleaning methods, since the deflection electrode is heated by the heater, the contamination adhering to the surface of each deflection electrode is promoted by the reaction between active oxygen and carbon, and is efficiently removed by washing.
[0149]
According to the above embodiment, as in the third embodiment, the carbon contamination adhered to the surface of the deflection electrode without causing thermal influence on other components is obtained by reacting active oxygen and carbon of the reaction gas. The reaction is promoted and can be efficiently removed. Therefore, it is possible to supply an electrostatic deflector that realizes a state in which the surface of the electrostatic electrode is not charged up and can maintain high-precision drawing for a long time.
[0150]
In addition, in an electron beam exposure apparatus using such an electrostatic deflector, highly accurate drawing can be maintained for a long time.
(Fifth embodiment)
In this embodiment, in the electrostatic deflectors of the third and fourth embodiments, the heat of the heater is efficiently transmitted to the deflection electrode, and the heat transfer from the electrostatic deflector to the outside is suppressed. It is a thing.
[0151]
Hereinafter, the electrostatic deflector according to the present embodiment will be described with reference to FIG. FIG. 13 is a perspective view schematically showing the structure of the electrode base material of the electrostatic deflector, in which the deflection electrode, the heater, the deflection voltage introduction terminal, the heater power terminal, and the like are not shown.
[0152]
As shown in FIG. 13, in this embodiment, a plurality of, for example, six cavities 350 are provided along the cylinder axis in the cylinder wall of the cylindrical electrode substrate 300, and the upper and lower surfaces communicate with each other through the cylinder. is doing. The cavities 350 are arranged at regular intervals and symmetrically with respect to the cylinder axis. Each of the cavities 350 is disposed between a heater (not shown) and the outer surface of the electrode substrate.
[0153]
Although not shown here, as in the third and fourth embodiments, the deflection electrode is formed on the inner wall surface of the cylindrical electrode substrate 300, and the deflection voltage introduction terminal is the electrode substrate 300. Are electrically connected to the back surface of the deflection electrode.
[0154]
Similarly to the third embodiment, the heater is provided on the inner wall surface of the electrode base material 300, and the heater power introduction terminal is provided on the side surface of the electrode base material 300. Similar to the embodiment, it is embedded in the cylindrical wall of the electrode substrate 300, and the heater power introduction terminal is provided on the upper surface of the cylinder.
[0155]
The heater power terminal is not necessarily provided on the upper surface of the cylinder of the electrode base material, and may be provided on the lower surface of the cylinder, the side surface, or a combination thereof.
[0156]
According to this embodiment, the following effects can be obtained in addition to the same effects as those of the third and fourth embodiments.
[0157]
In general, an electrostatic deflector is installed in a column, and a deflection electrode and a heater are in contact with external components via a deflection voltage introduction terminal and a heater power introduction terminal, respectively. Therefore, when the heater is heated to remove the contamination attached to the deflection electrode, the heat is transmitted to the external parts and columns, but the external parts and columns have poor heat resistance and may cause problems. .
[0158]
However, in this embodiment, since a cavity is provided between the heater and the outer surface of the electrode base material to reduce the cross-sectional area of the electrode base material in the direction in which heat is transmitted, the deflection voltage introduction terminal and the heater The amount of heat transmitted to external components and columns via the power introduction terminal is suppressed.
(Sixth embodiment)
As in the fifth embodiment, this embodiment efficiently transfers the heat of the heater to the deflection electrode in the electrostatic deflectors of the third and fourth embodiments, and the electrostatic deflector. The heat transfer from the outside to the outside is suppressed.
[0159]
Hereinafter, the electrostatic deflector according to the present embodiment will be described with reference to FIG. FIG. 14A is a top view schematically showing the structure of the electrode base material of the electrostatic deflector, and FIG. 14B is a perspective view schematically showing the structure of the electrode base material of the electrostatic deflector. In any of the drawings, the deflection electrode, the heater, the deflection voltage introduction terminal, the heater power terminal, and the like are not shown.
[0160]
As shown in the drawing, in the present embodiment, the cylindrical electrode substrate 400 is formed in a radial fin structure. That is, the cylindrical electrode base material 400 is cut in the inner wall direction by leaving the wall surface portion 400a other than the deflection voltage introduction terminal, so that the electrode base material 400 has the thin cylindrical portion 400b and the thin cylindrical portion. And a fin portion 400c extending radially from 400b. In order to reduce the cross-sectional area of the electrode base material in the heat transfer direction, the cutting from the outer portion to the inner surface is most preferably performed to the vicinity of the heater when the heater is embedded in the cylindrical wall. There is no problem even if it cuts up to.
[0161]
Although not shown here, the deflection electrode is formed on the inner wall surface of the thin cylindrical portion 400b in the same configuration as in the third and fourth embodiments, and the deflection voltage introduction terminal is the fin portion 400c. In this embodiment, the configuration is the same as that of the third and fourth embodiments, that is, the side surface portion penetrates the thin cylindrical portion 400b and is electrically connected to the back surface of the deflection electrode.
[0162]
Similarly to the third embodiment, the heater is provided on the inner wall surface of the thin cylindrical portion 400b, and the heater power introduction terminal is provided on the side surface portion of the thin cylindrical portion 400b. Similar to the embodiment, the heater power introduction terminal is embedded in the cylinder wall and provided on the upper surface of the cylinder.
[0163]
The heater power terminal is not necessarily provided on the upper surface of the cylinder of the electrode base material, and may be provided on the lower surface of the cylinder, the side surface, or a combination thereof.
[0164]
According to this embodiment, as in the fifth embodiment, the electrode in the direction in which heat is transferred from the heater to the outer surface of the electrode substrate by cutting the wall surface of the cylindrical electrode substrate inward. Since the cross-sectional area of the base material is reduced, the amount of heat transmitted to external components and columns via the deflection voltage introduction terminal and the heater power introduction terminal is suppressed.
(Seventh embodiment)
Next, an electron beam exposure apparatus according to the seventh embodiment of the present invention will be described. The basic configuration of the electron beam exposure apparatus is the same as that shown in FIG. 1 of the first embodiment. Description of the electrostatic deflector that is different from that of the first embodiment will be described.
[0165]
Hereinafter, the configuration of the electrostatic deflector in the present embodiment will be described in detail with reference to FIG. 15A is a perspective view showing an external configuration of the electrostatic deflector, FIG. 15B is a top view of the electrostatic deflector, and FIG. 15C is an EE in FIG. 15B. It is a longitudinal cross-sectional view along the line.
[0166]
As shown in the figure, a hollow cylindrical electrode substrate 40 and eight deflection electrodes 41 formed inside the electrode substrate 40.₁~ 41₈And a deflection voltage introduction terminal 45 for supplying a voltage to each deflection electrode 41i (i = 1 to 8).₁~ 45₈Therefore, it is comprised.
[0167]
As the electrode base material 40, in this embodiment, for example, about 10⁸Conductive ceramics with a high specific resistance of Ωcm are used.
[0168]
As shown in FIG. 15 (b), each of the deflection electrodes 41i is formed in the same shape, and is electrically insulated from each other inside the hollow cylinder of the electrode base material 40 and arranged in a cylinder axis symmetry. It is fixed.
[0169]
  Each of the deflection electrodes 41i is a metal having a conductive oxide at least on the surface.CoveredThe film 42 is formed directly or indirectly.
[0170]
  In this embodiment, the metalCoveredAs the film 42, ruthenium oxide is used, and the ruthenium oxide 42 is formed on the conductive ceramic surface of the electrode substrate 40 through a copper thin film 43 as a base metal.
[0171]
In addition, each of the deflection voltage introduction terminals 45i (i = 1 to 8) is connected to each deflection electrode 41i through a through hole 46 provided in a cylindrical side surface of the electrode base 40 facing the deflection electrode 41i. Each copper thin film 43 is electrically connected.
[0172]
Next, a method for manufacturing the electrostatic deflector will be specifically described.
[0173]
First, a hollow ceramic electrode substrate 40 having a good concentricity and roundness, an inner diameter of about 1.0 cm, a wall thickness of about 5.0 cm, and a length of about 2.0 cm by grinding conductive ceramics. Form.
[0174]
Thereafter, a through hole 46 having a diameter of about 0.3 cm reaching the inside of the cylinder is formed at a predetermined position on the cylindrical side surface of the electrode substrate 40.
[0175]
Next, electroless plating is performed on the cylindrical inner surface of the electrode substrate 40 to form a copper thin film 43 having a thickness of about 1 μm. Furthermore, electrolytic plating is performed to form a ruthenium film, and a ruthenium oxide film 42 is formed by heat treatment.
[0176]
Thereafter, for example, by mechanical processing, the laminated film of the copper thin film 43 and the ruthenium oxide 42 is accurately divided into 8 pieces with an interval of about 0.1 cm, and has a width of about 0.9 cm and a length of about 2.0 cm. The deflection electrode 41i having the above is manufactured.
[0177]
Next, a copper layer 47 with a film thickness of about 1.0 μm is plated on the inner wall surface of the through hole 46, and further a gold layer 48 with a film thickness of about 0.5 μm is plated, so that the copper thin film 43 of the deflection electrode 41 i A deflection voltage introduction terminal 45i electrically connected to is prepared. Thus, an electrostatic deflector is produced.
[0178]
  According to the electron beam exposure apparatus of this embodiment, since the surface of the electrode is covered with ruthenium oxide, active oxygen is used when contamination is attached to the electrostatic deflector and beam drift increases.TheCarbon-based contamination can be removed by in-situ cleaning of the electrode surface.
[0179]
On the other hand, since ruthenium oxide covering the surface of the deflection electrode of the electrostatic deflector is a conductive oxide, problems such as charge-up do not occur. This is apparent from the scanning line electron microscope (SEM) photograph of FIG.
[0180]
FIG. 16 is a diagram for explaining that ruthenium oxide is not charged up by an electron beam, and FIG. 16A is a diagram showing a state in which the region A of the central portion of ruthenium oxide is irradiated with an electron beam. In FIG. 16B, immediately after the central portion of ruthenium oxide is irradiated with an electron beam for 60 seconds, an electron beam irradiation region A in the central portion and a region B in which the surrounding electron beam is not irradiated are observed by SEM. It is a SEM photograph.
[0181]
That is, as shown in FIG. 16B, when ruthenium oxide is charged up by an electron beam, a region due to charge is observed in the SEM photograph with a contrast different from the non-charge-up region due to potential contrast. However, a change in contrast between the central part area (electron beam irradiation area) A irradiated with the electron beam and the peripheral part (electron beam non-irradiation area) B not irradiated with the electron beam is not observed. This indicates that ruthenium oxide is not charged up by the electron beam.
[0182]
  Further, the chemical reaction between ruthenium oxide and active oxygen is extremely weak, about 1/3, compared with the chemical reaction between ruthenium itself and active oxygen. Therefore, oxidationLuteNi is not easily etched by a chemical reaction with active oxygen even after repeated in-situ cleaning.CoveredCompared with a film, the antioxidant function is not lost over a long period of time.
[0183]
From the above, according to the electrostatic deflector and the electron beam exposure apparatus using the same according to the present embodiment, contamination can be removed and the electrode surface of the electrostatic deflector is not charged up. The state can be realized and high-precision exposure can be maintained for a long time.
[0184]
  In this embodiment,Ruthenium thin filmIs formed by electrolytic plating, but may of course be formed by sputtering. In this embodiment, the surface of the electrode of the electrostatic deflector is coated with ruthenium oxide, but is not limited to ruthenium oxide, and any conductive oxide may be used. Specifically, vanadium dioxide (VO ₂ ), Chromium dioxide (CrO)₂), Molybdenum dioxide (MoO)₂), Tungsten dioxide (WO₂), Rhenium dioxide (ReO)₂), Niobium dioxide (NbO)₂), Ruthenium dioxide (RuO)₂), Rhodium dioxide (RhO)₂), Iridium dioxide (IrO₂), Palladium dioxide (PdO)₂), Platinum dioxide (PtO)₂), Osmium dioxide (OsO)₂) And other conductive metal oxides, lanthanum nickel composite oxides (LaNiO)_Three) And strontium vanadate (SrVO)_Three), Calcium vanadate (CaVO)_Three), Strontium ferrate (SrFeO)_Three), Lanthanum titanate (LaTiO)_Three), Lanthanum strontium nickel composite oxide (LaSrNiO)_Four) Strontium chromate (SrCrO_Three), Calcium chromate (CaCrO)_Three), Calcium ruthenate (CaRuO)_Three), Strontium ruthenate (SrRuO)_Three), Strontium iridium (SrIrO)_Three) And the like can be preferably used.
[0185]
In this embodiment, the electrostatic deflector is described. However, the present invention is not limited to the application to the deflector, but can be applied to other components in the column such as an aperture.
[0186]
In addition, this invention is not limited to the electrostatic deflector of the said embodiment, It can apply to an electrostatic lens. That is, in the case of an electrostatic lens, the electrode is not divided into a plurality of parts and may be constituted by one.
[0187]
Moreover, you may combine each embodiment mentioned above in this invention. For example, the third, fourth, fifth, and sixth embodiments are included in the first embodiment, the fourth, fifth, and sixth embodiments are included in the third embodiment, and the fifth, The seventh embodiment may be combined with the sixth embodiment, and the fifth and sixth embodiments may be combined with the seventh embodiment.
[0188]
In the first to seventh embodiments, it is needless to say that the conductive oxide described in the seventh embodiment or the conductive complex oxide may be used as the metal film constituting the deflection electrode. .
[0189]
【The invention's effect】
As is apparent from the above description, according to the present invention, it is possible to easily remove contamination adhered to the electrode surface of an electrostatic deflector, an electrostatic lens, or the like.
[0190]
In addition, according to the invention described in claims 25 to 32, it is possible to remove the contamination adhered to the electrode surface of the electrostatic deflector, the electrostatic lens, etc., and realize a state where there is almost no charge-up. High-precision beam position control can be maintained for a long time, and even if the in-situ cleaning is repeated, it is difficult to be etched by a chemical reaction with a reactive gas, and it has an antioxidant function for a long period of time. Electron beam irradiation that can control the beam position with high accuracy without loss is provided.
[Brief description of the drawings]
FIG. 1 is a conceptual diagram showing a basic configuration of an electron beam exposure apparatus according to an embodiment of the present invention.
2A and 2B are diagrams showing a configuration of an electrostatic deflector according to the first embodiment of the present invention, in which FIG. 2A is a perspective view, FIG. 2B is a top view, and FIG. The longitudinal cross-sectional view which follows the AA 'line of 2 (b).
FIG. 3 is a longitudinal sectional view taken along line B-B ′ of FIG.
FIG. 4 is a longitudinal sectional view schematically showing a configuration of an electrostatic deflector formed by combining a plurality of electrostatic deflectors alone according to the first embodiment of the present invention.
FIG. 5 is a longitudinal sectional view schematically showing a configuration of an electrostatic deflector in which a plurality of stages of electrostatic deflectors alone are integrally formed according to a second embodiment of the present invention.
6A and 6B are diagrams showing a configuration of an electrostatic deflector according to a third embodiment of the present invention, in which FIG. 6A is a perspective view and FIG. 6B is a top view.
7A and 7B are diagrams showing a configuration of an electrostatic deflector according to a third embodiment of the present invention, in which FIG. 7A is a longitudinal sectional view taken along the line CC ′ of FIG. (B) is a figure which shows the structure of a heater typically.
FIG. 8 is a schematic diagram of a main part showing a manufacturing process of an electrostatic deflector according to a third embodiment.
FIG. 9 is a schematic diagram of a main part showing a manufacturing process of an electrostatic deflector according to a third embodiment.
FIG. 10 is a perspective view showing an electrostatic deflector according to a fourth embodiment of the present invention.
11A and 11B are views showing an electrostatic deflector according to a fourth embodiment of the present invention, FIG. 11A is a top view of FIG. 10B, and FIG. 11B is FIG. FIG.
12 is a cross-sectional view taken along line D-D ′ of FIG.
FIG. 13 is a perspective view schematically showing a structure of an electrode base material of an electrostatic deflector according to a fifth embodiment of the present invention.
14A and 14B are views schematically showing the structure of an electrode base material of an electrostatic deflector according to a sixth embodiment of the present invention, in which FIG. 14A is a top view and FIG. 14B is a perspective view. .
15A and 15B are diagrams showing a configuration of an electrostatic deflector according to a seventh embodiment of the present invention, in which FIG. 15A is a perspective view, FIG. 15B is a top view, and FIG.15The longitudinal cross-sectional view which follows the E-E 'line of (b).
FIGS. 16A and 16B are diagrams for explaining a charge state in an electrostatic deflector of ruthenium oxide, FIG. 16A is an irradiation state diagram of an electron beam, and FIG. 16B is a ruthenium oxide after electron beam irradiation; The observation image which looked at with the scanning electron microscope (SEM).
[Explanation of symbols]
  10 ... Chamber
  11 ... Sample (wafer)
  12 ... Mark stand
  13 ... Moveable stage
  20 ... Column
  21 ... electron gun
  22 ... Electron beam
  23 ... Condenser lens
  24. First molding aperture
  25 ... Projection lens
  26 ... CP aperture
  27 ... CP selection deflector
  28 ... Reduction lens
  29 ... Objective lens
  30 ... Objective deflector
  31 ... Blanking deflector
  32 ... Blanking aperture
  33 ... Detector
  40, 60, 100, 200, 300, 400 ... electrode base material
  41i, 61i, 101i, 201i, 201i (i = 1 to 8)
  331 ... Deflection electrode
  42, 62, 102, 202 ... metalCoveredFilm (ruthenium oxide)
  43, 63, 103, 203 ... Underlying metal (copper thin film)
  45i, 65i, 105i, 205i (i = 1-8)
  332 ... Deflection voltage introduction terminal
  46, 65i, 106i, 136i, 206i (i = 1 to 8) ... through holes
  47, 67, 107, 207 ... copper layer
  48, 68, 108, 208 ... gold layer
  50 ... Single electrostatic deflector
  70, 333 ... Gas supply passage
  80 ... Shield
  85 ... Holder
  90 ... Reactive gas supply pipe
  116: Blanking deflection circuit
  117 ... Lens control circuit
  118 ... CP selection circuit
  119: Beam deflection circuit
  120. Detection signal processing circuit
  121. Stage control circuit
  122 ... Control computer
  123 ... Pattern data decoder
  124 ... Pattern data memory
  130i (i = 1-8), 230 ... heater
  131 i (i = 1 to 8)... Insulating film
  135 i (i = 1 to 8), 235... Heater power introduction terminal
  140 ... groove
  141, 230i ... heater material
  310 ... Groove
  320 ... Shield part
  321 ... Shield electrode
  322 ... Shield electrode terminal
  323 ... Lid
  330 ... Deflector single part
  350 ... Cavity
  400a ... Wall part
  400b ... Thin part
  400c ... Fin part
  A ... Electron beam irradiation area
  B ... Non-electron beam irradiation area
  G ... Active oxygen gas

Claims (23)

A tubular substrate;
A plurality of deflection electrodes formed along the cylinder axis on the inner wall surface of the cylindrical substrate and electrically separated from each other;
A deflection voltage introduction terminal electrically connected to each of the deflection electrodes;
A reactive gas supply passage extending from the outer surface to the inside of the cylindrical base material and extending to at least one of the upper and lower surfaces;
An electrostatic deflector comprising: In an electron beam irradiation apparatus having an electron gun that generates an electron beam and an electrostatic deflector that controls the electron beam, the electrostatic deflector includes:
A tubular substrate;
A plurality of deflection electrodes formed along the cylinder axis on the inner wall surface of the cylindrical substrate and electrically separated from each other;
A deflection voltage introduction terminal electrically connected to each of the deflection electrodes;
A reactive gas supply passage extending from the outer surface to the inside of the cylindrical base material and extending to at least one of the upper and lower surfaces;
Comprising
An electron beam irradiation apparatus, wherein a reactive gas supply pipe is connected to a reactive gas passage of the electrostatic deflector. A tubular substrate;
A lens electrode formed along the cylinder axis on the inner wall surface of the cylindrical substrate;
A voltage introduction terminal electrically connected to the lens electrode;
A reactive gas supply passage extending from the outer surface to the inside of the cylindrical base material and extending to at least one of the upper and lower surfaces;
An electrostatic lens comprising: In an electron beam irradiation apparatus having an electron gun that generates an electron beam and an electrostatic lens that controls the electron beam, the electrostatic lens includes:
A tubular substrate;
A lens electrode formed along the cylinder axis on the inner wall surface of the cylindrical substrate;
A voltage introduction terminal electrically connected to the lens electrode;
A reactive gas supply passage extending from the outer surface to the inside of the cylindrical base material and extending to at least one of the upper and lower surfaces;
Comprising
An electron beam irradiation apparatus, wherein a reactive gas supply pipe is connected to a reactive gas passage of the electrostatic lens.   The electron beam irradiation apparatus according to claim 2, wherein the reactive gas supply passage extends to an upper surface and a lower surface of the electrostatic deflector or the electrostatic lens. A tubular substrate;
A heater formed along the cylinder axis on the inner wall surface of the cylindrical substrate;
A plurality of deflection electrodes formed along the cylinder axis of the cylindrical base material via an insulating film on the heater and electrically separated from each other;
A heater power introduction terminal electrically connected to the heater;
A deflection voltage introduction terminal electrically connected to each of the deflection electrodes;
Toward the inside from the outside surface the cylindrical base member, and on the extension building reactive gas supply path to the lower surface of the at least one surface,
An electrostatic deflector comprising: The heater is divided into the same number as the deflection electrode, is formed along a cylinder axis of the cylindrical base material, and is arranged to face each of the deflection electrodes. 6. The electrostatic deflector according to 6. A tubular substrate;
A heater embedded and formed along the cylinder axis in the cylinder wall of the cylindrical substrate;
A plurality of deflection electrodes formed along the cylinder axis on the cylinder inner surface of the cylindrical substrate and electrically separated from each other;
A heater power introduction terminal electrically connected to the heater;
A deflection voltage introduction terminal electrically connected to each of the deflection electrodes;
A reactive gas supply passage extending from the outer surface to the inside of the cylindrical base material and extending to at least one of the upper and lower surfaces;
An electrostatic deflector comprising: The heater is constituted by a heater material embedded in a plurality of through holes provided through the upper and lower surfaces of the cylindrical wall, and adjacent heater materials connected in series on the upper and lower surfaces of the cylindrical wall. The electrostatic deflector according to claim 8. 9. The electrostatic deflector according to claim 6, wherein a cavity is further provided along a cylinder axis in a cylinder wall portion of the electrode substrate between the outer surface of the electrode substrate and the heater. . The electrostatic deflector according to claim 6 or 8, wherein the electrode base material has a fin structure in which a cylindrical wall portion between an outer surface of the electrode base material and the heater is removed in a cylindrical axis direction. A first step of forming a groove in the inner wall of the cylindrical substrate;
A second step of forming a heater by embedding a high resistance material in the groove;
A third step of forming an insulating film on the inner wall of the cylindrical substrate including the heater upper surface;
A fourth step in which a plurality of deflection electrodes are formed on the insulating film along the cylinder axis of the cylindrical substrate;
A fifth step of forming a heater power introduction terminal electrically connected to the heater;
A sixth step of forming a deflection voltage introduction terminal electrically connected to the deflection electrode;
A method for forming an electrostatic deflection electrode, comprising: The groove in the first step and the heater in the second step are formed in each region divided into a plurality along the cylindrical axis of the cylindrical base material, and the deflection electrode in the fourth step is 13. The method of forming an electrostatic deflection electrode according to claim 12, wherein the number is the same as the number of heaters and is formed opposite to the heaters. A tubular substrate;
A heater formed along the cylinder axis on the inner wall surface of the cylindrical substrate;
A lens electrode formed along the cylinder axis of the cylindrical substrate via an insulating film on the heater;
A heater power introduction terminal electrically connected to the heater;
A lens voltage introduction terminal electrically connected to the lens electrode;
A reactive gas supply passage extending from the outer surface to the inside of the cylindrical base material and extending to at least one of the upper and lower surfaces;
An electrostatic lens comprising: A tubular substrate;
A heater embedded in the cylindrical wall of the cylindrical base material along the cylindrical axis; and
A lens electrode formed along the cylinder axis on the cylinder inner surface of the cylindrical substrate;
A heater power introduction terminal electrically connected to the heater;
A lens voltage introduction terminal electrically connected to the lens electrode;
A reactive gas supply passage extending from the outer surface to the inside of the cylindrical base material and extending to at least one of the upper and lower surfaces;
An electrostatic lens comprising: The heater is constituted by a heater material embedded in a plurality of through holes provided through the upper and lower surfaces of the cylindrical wall, and adjacent heater materials connected in series on the upper and lower surfaces of the cylindrical wall. The electrostatic lens according to claim 15. 16. The electrostatic lens according to claim 14, wherein a cavity is further provided along a cylinder axis in a cylinder wall portion of the electrode substrate between the outer surface of the electrode substrate and the heater. The electrostatic lens according to claim 14 or 15, wherein the electrode base material has a fin structure by removing a cylindrical wall portion between an outer surface of the electrode base material and the heater in a cylindrical axis direction. A first step of forming a groove in the inner wall of the cylindrical substrate;
A second step of forming a heater by embedding a high resistance material in the groove;
A third step of forming an insulating film on the inner wall of the cylindrical substrate including the heater upper surface;
A fourth step of forming a lens electrode along the cylinder axis of the cylindrical substrate on the insulating film;
A fifth step of forming a heater power introduction terminal electrically connected to the heater;
A sixth step of forming a voltage introduction terminal electrically connected to the lens electrode;
A method of forming an electrostatic lens, comprising: In an electron beam irradiation apparatus having an electron gun that generates an electron beam and an electrostatic deflector that controls the electron beam, the electrostatic deflector includes:
A tubular substrate;
A heater formed along the cylinder axis on the inner wall surface of the cylindrical substrate; and
A plurality of deflection electrodes formed along the cylinder axis of the cylindrical base material via an insulating film on the heater and electrically separated from each other;
A heater power introduction terminal electrically connected to the heater;
A deflection voltage introduction terminal electrically connected to each of the deflection electrodes;
A reactive gas supply passage extending from the outer surface to the inside of the cylindrical base material and extending to at least one of the upper and lower surfaces;
An electron beam irradiation apparatus comprising: In an electron beam irradiation apparatus having an electron gun that generates an electron beam and an electrostatic lens that controls the electron beam, the electrostatic lens includes:
A tubular substrate;
A heater formed along the cylinder axis on the inner wall surface of the cylindrical substrate;
A lens electrode formed along the cylinder axis of the cylindrical substrate via an insulating film on the heater;
A heater power introduction terminal electrically connected to the heater;
A lens voltage introduction terminal electrically connected to the lens electrode;
A reactive gas supply passage extending from the outer surface to the inside of the cylindrical base material and extending to at least one of the upper and lower surfaces;
An electron beam irradiation apparatus comprising: The reactive gas is introduced into the reactive gas supply passage in a state in which the normal operation of the electron beam irradiation apparatus according to claim 20 or 21 is stopped, and the electrostatic deflector or the electrostatic lens is introduced. A cleaning method for an electron beam irradiation apparatus, wherein a contamination attached to the electrostatic deflector or the electrostatic lens is removed by heating the heater. During normal operation of the electron beam irradiation apparatus according to claim 20 or claim 21, a reactive gas is introduced into the reactive gas supply passage, and the electrostatic deflector or the heater of the electrostatic lens is provided. A cleaning method for an electron beam irradiation apparatus, wherein the contamination adhered to the electrostatic deflector or the electrostatic lens is removed by heating.

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