JP3728950B2 - 半導体装置の製造方法及び平坦化加工装置 - Google Patents

半導体装置の製造方法及び平坦化加工装置 Download PDF

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Publication number
JP3728950B2
JP3728950B2 JP34513998A JP34513998A JP3728950B2 JP 3728950 B2 JP3728950 B2 JP 3728950B2 JP 34513998 A JP34513998 A JP 34513998A JP 34513998 A JP34513998 A JP 34513998A JP 3728950 B2 JP3728950 B2 JP 3728950B2
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Prior art keywords
abrasive grains
grindstone
insulating film
polishing
semiconductor device
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Expired - Fee Related
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JP34513998A
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Japanese (ja)
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JP2000173955A5 (enExample
JP2000173955A (ja
Inventor
感 安井
創一 片桐
喜雄 河村
亮成 河合
雅彦 佐藤
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Hitachi Ltd
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Hitachi Ltd
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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP34513998A 1998-12-04 1998-12-04 半導体装置の製造方法及び平坦化加工装置 Expired - Fee Related JP3728950B2 (ja)

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JP34513998A JP3728950B2 (ja) 1998-12-04 1998-12-04 半導体装置の製造方法及び平坦化加工装置

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JP34513998A JP3728950B2 (ja) 1998-12-04 1998-12-04 半導体装置の製造方法及び平坦化加工装置

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JP2000173955A JP2000173955A (ja) 2000-06-23
JP2000173955A5 JP2000173955A5 (enExample) 2004-12-16
JP3728950B2 true JP3728950B2 (ja) 2005-12-21

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JP34513998A Expired - Fee Related JP3728950B2 (ja) 1998-12-04 1998-12-04 半導体装置の製造方法及び平坦化加工装置

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002043256A (ja) 2000-07-27 2002-02-08 Hitachi Ltd 半導体ウエハ平坦化加工方法及び平坦化加工装置
EP1243633A4 (en) * 2000-10-02 2009-05-27 Mitsui Mining & Smelting Co CERIUM-SUSPENDED ABRASIVE AND METHOD FOR THE PRODUCTION THEREOF
TWI281493B (en) 2000-10-06 2007-05-21 Mitsui Mining & Smelting Co Polishing material
DE60315257T2 (de) * 2002-02-20 2008-04-17 Ebara Corp. Polierverfahren und polierflüssigkeit
JP2010034581A (ja) * 2009-11-04 2010-02-12 Jsr Corp 化学機械研磨用水系分散体
JP5649417B2 (ja) 2010-11-26 2015-01-07 株式会社荏原製作所 固定砥粒を有する研磨テープを用いた基板の研磨方法

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