JP3715638B2 - Manufacturing method of semiconductor light emitting device - Google Patents

Description

The present invention relates to a semiconductor light emitting device used in, for example, a semiconductor optical amplifier, a wavelength tunable light source device, and the like, and relates to a method for manufacturing a semiconductor light emitting device having high light output and high reliability.

  Conventionally, when fabricating a semiconductor laser including an Al composition such as AlGaAs or InGaAlP, there is a problem of oxidation of the crystal surface during regrowth, and therefore a ridge structure, an internal stripe structure, or a ridge embedded structure is mainly employed. Yes. When manufacturing a semiconductor laser with these structures, if the active layer is cut by etching, there is a problem that reliability is impaired due to the effect of oxidation on the active layer. Therefore, an etching blocking layer is usually provided on the active layer. . The film thickness of the etching stopper layer at that time is usually formed as a thin layer of 30 nm or less so as not to affect the laser characteristics and the light density distribution.

  By the way, when the etching prevention layer is formed so as not to affect the light density distribution, the light density distribution is maximized in a portion close to the normal light emitting portion, which causes deterioration in the active layer. In order to solve this problem, a method of providing a light density adjusting layer has been considered. As this light density adjusting layer, a semiconductor laser in which a beam expanding layer for reducing the light density of laser light is independently provided on an etch stop layer is disclosed in Patent Document 1 below.

An embodiment of the semiconductor laser disclosed in Patent Document 1 will be described along the procedure of the manufacturing method. As shown in FIG. 4, first, an n-Al _0.5 Ga _0.5 As cladding layer is formed on an n-GaAs substrate 51. 52 (2 μm), GaAs active layer 53 (0.04 μm), p-Al _0.5 Ga _0.5 As cladding layer 54 ( _0.25 μm), p-Ga _0.5 In _0.5 P etch stop layer 55 (5 nm), p-Al _0.4 A Ga _0.6 As beam expansion layer 56 ( _0.25 μm), a p-Al _0.55 Ga _0.45 As second cladding layer 57 (1.5 μm), and a p-GaAs contact layer 58 ( _0.25 μm) are successively grown.

Next, using the SiO ₂ film having a width of about 5 μm as a mask, the p-GaAs contact layer 58, the p-Al _0.55 Ga _0.45 As second cladding layer 57, and the p-Al _0.4 Ga _0.6 As beam expansion layer 56 are etched using sulfuric acid. Etching with liquid. Further, the n-GaAs block layer 59 is selectively grown in a region without the SiO ₂ film by metal organic vapor phase epitaxy. After removing the SiO ₂ film, a p-GaAs buried layer 60 is formed to reduce the series resistance of the device, and electrodes (not shown) are formed on the front and back surfaces of the wafer. Thereby, a semiconductor laser having a cross-sectional structure shown in FIG. 4 is formed.

  By the way, when a semiconductor laser is manufactured, the original purpose is to stop etching as a function of the etching blocking layer. For this reason, it has been customary to use materials with great selectivity.

For example, in the semiconductor laser device disclosed in the following Patent Document 2, as shown in FIG. 5, a molecular beam epitaxy (MBE) method, a metal organic vapor phase epitaxy (OM-VPE) method or the like is formed on an n-GaAs substrate 71. the _{method, n-Al x Ga 1-} x As (x = 0 → 0. 5) mole fraction graded buffer layer 72 (0. 2 [mu] m _{thickness), n-Al y Ga 1} -y As cladding layer 73 (1. 5μm thick), a multiple quantum well active layer 74, p-GaAs etching stop layer 75 (20 Å thick with no _{additive), p-Al y Ga 1} -y As cladding layer 76 (1. 2 [mu] m thick), and p-GaAs contact Layer 77 (1.0 μm thick) is grown sequentially. 5, the etching stop layer 75 is formed on top of the active layer 74 using the 1/10 or less is etched material _{p-Al y Ga 1-y} As cladding layer 76 etch rate is at its upper .

  As another example, as shown in FIG. 6, the semiconductor light emitting device disclosed in Patent Document 3 below includes a buffer layer 82, a lower cladding layer 83, an active layer 84, and a first upper cladding on a substrate 81. The layer 85, the etching blocking layer 86, the current blocking layer 87, the cap layer 88, the second upper cladding layer 89, and the contact layer 90 are sequentially disposed, and the pair of electrodes 111 and 112 are disposed outside the substrate 81 and the contact layer 90. Is done. Each of these layers is formed as an epitaxial thin film. The etching blocking layer 86 and the cap layer 88 are made of MAs (M is a group IIIb element, one or more), and the current blocking layer 87 is made of MP. Further, the {111} plane is mainly exposed on each wall surface of the groove 91 formed in the current blocking layer 87. When manufacturing this semiconductor light emitting device, an etchant that can selectively etch other surfaces except the surface on which the MP crystal plane mainly appears is used as the etchant.

As described above, in the conventional semiconductor light emitting devices disclosed in Patent Document 2 and Patent Document 3 below, a material having high selectivity is used as the function of the etching blocking layer because the original purpose is to stop etching. Etching stopped at an acute angle at the interface between the etching stopper layer and the upper layer portion.
JP-A-6-291407 Japanese Patent Laid-Open No. 1-96980 Japanese Patent Laid-Open No. 7-221406

  In the semiconductor laser disclosed in Patent Document 1, the beam expansion layer 56 is formed on the etch stop layer 55, and the second cladding layer 57 and the contact layer 58 are formed on the beam expansion layer 56. For this reason, depending on the type of the etchant, the shape may vary due to the difference in the etching rate of each layer. Further, although the light density can be adjusted by the beam expanding layer 56, the side surfaces of the beam expanding layer 56 are removed by etching, the controllability of the ridge width is deteriorated, and the shape of the light density distribution is likely to be complicated.

  The semiconductor light emitting devices disclosed in Patent Document 2 and Patent Document 3 are etched using a material having high selectivity (for example, Patent Document 2 has an etching rate ratio of 10 times or more). In Document 2, etching stopped at an acute angle at the interface between the etching stopper layer 75) and the upper layer portion. For this reason, when the ridge embedding structure or the internal stripe structure is adopted, the growth does not reach the side surface of the ridge forming layer due to the discontinuous point due to the stop of the acute etching, and an abnormally grown portion sometimes occurs. .

Therefore, the present invention has been made in view of the above-mentioned problems, and it is possible to reduce the light density of the active layer by drawing the center of the light density toward the ridge forming layer side, and to make it easy to attach growth seeds at the initial stage of growth. Accordingly, it is an object of the present invention to provide a method for manufacturing a semiconductor light emitting device capable of growing up to the side surface of a ridge forming layer.

In order to achieve the above object, a method of manufacturing a semiconductor light emitting device according to claim 1 includes an etching blocking layer comprising a first cladding layer 2, an active layer 3, a second cladding layer 4, and InGaAsP on a GaAs substrate 1. 6. A method of manufacturing an AlGaAs-based semiconductor light-emitting device, wherein a plurality of layers including a third cladding layer 7 are sequentially formed, and a current blocking layer 8 is disposed on a side portion of the third cladding layer.
Sequentially crystal-growing a first cladding layer, an active layer, a second cladding layer, an etching stop layer, and a third cladding layer on a GaAs substrate;
Forming a mask at a predetermined location of the third cladding layer;
Using the mask, the portion of the third cladding layer without the mask is removed until the etching stopper layer comes to the surface, and the surface of the etching stopper layer is etched to form the etching stopper layer and the third cladding. Forming a ridge forming layer including a gently inclined surface extending from the boundary between the layers to the etching stop layer side ;
Forming a current blocking layer on the side of the ridge formation layer containing a pre-Symbol gently inclined surface, without causing abnormal growth,
Removing the mask .

The method for manufacturing a semiconductor light emitting element according to claim 2 is the method for manufacturing a semiconductor light emitting element according to claim 1,
As an etchant used for etching the surfaces of the third cladding layer and the etching stopper layer, a material having a selectivity of the etching stopper layer to the third cladding layer of 3 to 10 is used .

The method of manufacturing a semiconductor light emitting device of claim 3 is on the GaAs substrate 1, made of AlGaAs based material, the first cladding layer 2, the active layer 3 etch stop layer 6 made of, and a second cladding layer 4, InGaAsP, a plurality of layers are successively formed including a current blocking layer 8 made of AlGaAs-based material, a portion of the current blocking layer is selectively dividing removed by portions and the surface side, of the plurality comprising a third cladding layer 7 A method of manufacturing a semiconductor light emitting device having a structure in which a layer is formed ,
Sequentially growing a first cladding layer, an active layer, a second cladding layer, an etching stop layer, and a current blocking layer on a GaAs substrate;
Forming a mask at a predetermined location of the current blocking layer;
Using the mask, a portion of the current blocking layer without the mask is removed until the etching blocking layer is exposed on the surface, and the surface of the etching blocking layer is etched, and the etching blocking layer and the current blocking layer are removed. Forming a stripe portion including a gentle inclined surface extending from the boundary portion between them to the etching stopper layer side;
Removing the mask;
Forming a third cladding layer in the stripe portion including the gently inclined surface without causing abnormal growth .

The method of manufacturing a semiconductor light emitting device according to claim 4, wherein, in the method for manufacturing a semiconductor light emitting device according to claim 3,
A material having a selectivity of the etching blocking layer to the current blocking layer of 3 to 10 is used as an etchant used for etching the surfaces of the current blocking layer and the etching blocking layer .

The method of manufacturing a semiconductor light emitting device according to claim 5, wherein, in the method for manufacturing a semiconductor light emitting device according to claim 2 or 4, wherein,
The etching solution is made of tartaric acid or phosphoric acid .

The method of manufacturing a semiconductor light emitting device according to claim 6, wherein, in the method for manufacturing a semiconductor light emitting device according to any one of claims 1 to 5,
The etching stopper layer is formed with a thickness of 30 nm or more .

According to the method for manufacturing a semiconductor light emitting device of the present invention, since the material having a higher refractive index than that of the surrounding cladding layer is used for the etching prevention layer, the center of the light density is drawn toward the center of the ridge forming layer side, and the light of the active layer Density is reduced. As a result, the maximum part of the light density distribution can be removed from the light emitting part. In addition, when a grating forming layer or a waveguide layer is provided between the active layer and the etching stop layer, it is easy to adjust the light density while keeping the distance from the active layer to the ridge forming layer or the doped layer constant. It becomes.

  The etching prevention layer, the ridge formation layer, and the selection ratio determined by the combination of the etching liquids for forming the ridge formation layer are set to 3 to 10, and the etching prevention layer is formed using a material having incomplete selectivity, thereby performing the etching. The acute angle between the etching stopper layer and the upper layer is relaxed to some extent, so that the growth seeds at the initial stage of growth easily adhere. As a result, the problem of the conventional abnormal growth that grows up to the side surface of the ridge forming layer is improved.

  Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings. FIG. 1 is a cross-sectional view showing a first embodiment of a semiconductor light-emitting device according to the present invention, FIG. 2 is a cross-sectional view showing a second embodiment of the semiconductor light-emitting device according to the present invention, and FIG. 3 is a semiconductor according to the present invention. It is sectional drawing which shows 3rd Embodiment of a light emitting element.

  As shown in FIG. 1, the semiconductor light emitting device according to the first embodiment includes a second cladding layer 4 (4a, 4a, 4) sandwiching a substrate 1, a first cladding layer 2, a quantum well active layer 3, and a grating formation layer 5 therebetween. 4b), an etching blocking layer 6, a third cladding layer (ridge forming layer) 7, a current blocking layer 8 as a buried growth layer embedded in the side portion 7a of the third cladding layer 7, a fourth cladding layer 9, and a contact layer They are arranged between a pair of electrodes (not shown) in the order of 10. A waveguide layer may be formed instead of the grating forming layer 5.

  Here, the etching blocking layer 6 is made of a material having a higher refractive index than the surrounding cladding layers (the second cladding layer 4 (4b) and the third cladding layer 7). Further, the etching prevention layer 6 includes a specific etching solution (water or water + tartaric acid-based or phosphoric acid-based water containing hydrogen peroxide) used in forming the mesa stripe-shaped ridge formation layer by the third cladding layer 7 and a third. A material to be etched with a selection ratio determined by a combination with the clad layer (ridge forming layer) 7 (rate ratio between the etching rate of the etching stopper layer 6 and the etching rate of the third clad layer 7 by the etchant) of about 3 to 10. Is used. Specifically, InGaAsP (0 <In <0.45, 0 <P <0.9) is used, and the film thickness is adjusted to 30 nm or more.

Next, a method for manufacturing the semiconductor light emitting device having the above configuration will be described. First, an n-Al _0.45 Ga _0.55 As first cladding layer (1.5 μm) 2, a GaAs / Al _0.3 Ga _0.7 As quantum well active layer (0.12 μm) 3, p-Al _0.2 on an n-GaAs substrate 1. P-Al _0.45 Ga _0.55 As second cladding layer (0.25 μm) 4a, 4b, p-In _0.2 Ga _0.8 As _0.6 P _0.4 etching with Ga _0.8 As grating forming layer (0.1 μm) 5 sandwiched therebetween A blocking layer (0.1 μm) 6 and a p-Al _0.45 Ga _0.55 As third cladding layer (0.5 μm) 7 are successively grown.

In the crystal growth described above, the etching prevention layer 6 has a selectivity determined by the combination of the etching solution used for forming the ridge formation layer by the third cladding layer 7, the etching prevention layer 6, and the third cladding layer 7. A material that falls within a range is selected. Then, an etching process is performed on a predetermined portion of the p-Al _0.45 Ga _0.55 As third cladding layer 7 using a mask of the SiNx film, and the mesa stripe is formed on the p-Al _0.45 Ga _0.55 As third cladding layer (0.5 μm) 7. A ridge forming layer cut into a shape is formed. In this etching process, a tartaric acid-based or phosphoric acid-based etching solution containing water or water + hydrogen peroxide water is used.

When the mesa stripe ridge forming layer is formed on the etching stop layer 6 by the etching process, the n-Al _0.55 Ga _0.45 As current blocking layer (0.5 μm) 8 is formed on the ridge forming layer 7 by metal organic chemical vapor deposition. A crystal is grown as a buried growth layer on the side portion 7a. Thereafter, the SiNx film of the mask is removed, and a p-Al _0.45 Ga _0.55 As fourth cladding layer (1 μm) 9 and a p ⁺ -GaAs contact layer (1.0 μm) 10 are formed on the ridge forming layer 7 and the current blocking layer 8. Are sequentially grown. Then, a pair of electrodes (not shown) are provided outside the substrate 1 and the contact layer 10 to complete the semiconductor light emitting device.

  Next, the semiconductor light emitting device of the second embodiment will be described with reference to FIG. In addition, the same number is attached | subjected to the component same as the semiconductor light-emitting device of 1st Embodiment.

In the semiconductor light emitting device of the second embodiment, the p-Al _0.2 Ga _0.8 As grating forming layer 5 in the semiconductor light emitting device of the first embodiment described above is formed of a p-Al _0.45 Ga _0.55 As second cladding layer 4a and a p- As shown in FIG. 2, there is no p-Al _0.2 Ga _0.8 As grating forming layer 5 and the p-Al _0.45 Ga _0.55 As second layer formed between the Al _0.45 Ga _0.55 As second cladding layer 4b. This is a configuration in which the two cladding layers 4 are formed by one cladding layer without being divided into two, and the other configurations are the same as those of the first embodiment.

  That is, the semiconductor light emitting device of the second embodiment includes a substrate 1, a first cladding layer 2, a quantum well active layer 3, a second cladding layer 4, an etching blocking layer 6, a third cladding layer (ridge forming layer) 7, The current blocking layer 8, the fourth cladding layer 9, and the contact layer 10, which are buried growth layers embedded in the side portions 7 a of the third cladding layer 7, are disposed between a pair of electrodes (not shown) in this order.

  Here, in manufacturing the semiconductor light emitting device of each of the above-described embodiments, if the selection ratio during the etching process is 10 or more, the etching of the third cladding layer 7 by the etchant stops on the surface of the etching stopper layer 6. Therefore, the third cladding layer 7 is etched at an acute angle with respect to the etching stopper layer 6.

Therefore, in this example, the etching stopper layer 6 is formed using a material that is etched within a selection ratio of 3 to 10, that is, InGaAsP. Thus, a third case where the cladding layer 7 to form a mesa stripe-shaped ridge forming layer, GaAs / Al _0.3 Ga _0.7 As quantum surface of the well active layer 3 so is not etched _{p-In 0.2 Ga 0.8 As 0.6} P 0.4 The p-Al _0.45 Ga _0.55 As third cladding layer 7 including the etching stopper layer 6 is etched.

As a result, the acute angle portion formed at the boundary surface between the p-In _0.2 Ga _0.8 As _0.6 P _0.4 etching blocking layer 6 and the p-Al _0.45 Ga _0.55 As third cladding layer 7 has a moderately inclined slope. It is etched. As a result, the center of the optical density is attracted to the center on the ridge forming layer 7 side, the optical density of the GaAs / Al _0.3 Ga _0.7 As quantum well active layer 3 is reduced, and the growth species at the initial stage of growth are easily attached. Become stable. As a result, the growth on the grating forming layer 5 is stabilized and the reliability of the device is increased.

  Thus, since the semiconductor light emitting device of this example uses a material having a higher refractive index than the surrounding cladding layers (second cladding layer 4 and third cladding layer 7) as the etching blocking layer 6, the center of the optical density is the ridge. The light density of the quantum well active layer 3 is reduced by being drawn toward the center on the formation layer 7 side. As a result, the maximum part of the light density distribution can be removed from the light emitting part. When the grating forming layer 5 (configuration shown in FIG. 1) or the waveguide layer is provided in the cladding layer (second cladding layer 4) between the quantum well active layer 3 and the etching stopper layer 6, the quantum well active layer 3 Thus, it is easy to adjust the light density while keeping the distance from the ridge forming layer 7 and the doped layer constant.

  Further, in this example, the material of the etching stopper layer 6 is such that the selection ratio determined by the combination of the etching stopper layer 6, the ridge forming layer 7, and the etching solution for forming the ridge forming layer 7 is in the range of 3-10. And a material with incomplete selectivity is used. Specifically, InGaAsP (0 <In <0.45, 0 <P <0.9) is used as the material of the etching stop layer 6, and the film thickness is 30 nm or more. As a result, the acute angle of the interface between the etching stopper layer 6 and the upper layer (ridge forming layer 7) during etching is relaxed to some extent, and the growth seeds at the initial stage of growth tend to adhere. As a result, the current blocking layer 8 as a buried growth layer grows up to the side surface of the ridge formation layer, and the conventional problem of abnormal growth is improved. As a result, a highly reliable semiconductor light emitting device with high light output can be manufactured with high yield.

  Next, a semiconductor light emitting device according to a third embodiment will be described with reference to FIG. Unlike the ridge embedding structures of the first and second embodiments described above, the semiconductor light emitting device of the third embodiment has an internal stripe structure.

  As shown in FIG. 3, the semiconductor light emitting device of the third embodiment includes a substrate 1, a first cladding layer 2, a quantum well active layer 3, a second cladding layer 4, an etching blocking layer 6, a current blocking layer 8, The 3 clad layer 7 and the contact layer 10 are laminated in this order, and electrodes (not shown) are arranged at both ends thereof.

Next, a method for manufacturing the semiconductor light emitting device of the third embodiment will be described. First, an n-Al _0.45 Ga _0.55 As first cladding layer (1.5 μm) 2, a GaAs / Al _0.3 Ga _0.7 As quantum well active layer (0.12 μm) 3, p- Al _0.45 Ga _0.55 As second cladding layer (0.25 μm) 4, p-In _0.2 Ga _0.8 As _0.6 P _0.4 etching blocking layer (0.1 μm) 6, n-Al _0.55 Ga _0.45 As current blocking layer (0 .5 μm) 8 is formed by epitaxial growth sequentially.

  In the crystal growth, the etching blocking layer 6 has a selection ratio in the range of about 3 to 10 determined by the combination of the etching solution used for forming the stripe portion of the current blocking layer 8, the etching blocking layer 6 and the current blocking layer 8. The inner material is selected.

  Subsequently, a SiNx film is deposited on the surface of the current blocking layer 8 by a plasma CVD method, and the SiNx film at the stripe portion is opened by a photolithography method. Then, the current blocking layer 8 in the stripe portion is selectively etched with a tartaric acid-based etchant to form a stripe portion, and then the SiNx film is removed. Thereafter, the third cladding layer 7 and the contact layer 10 are epitaxially grown. Then, a pair of electrodes (not shown) are provided outside the substrate 1 and the contact layer 10 to complete the semiconductor light emitting device.

As described above, in the semiconductor light emitting device of the third embodiment, as in the semiconductor light emitting devices of the first and second embodiments, the material to be etched within a selection ratio of 3 to 10, that is, The etching stopper layer 6 is formed using InGaAsP. Thus, when forming the stripe part of the current blocking layer 8, including _{p-In 0.2 Ga 0.8 As 0.6} P 0.4 etching stop layer 6 so that the surface of the GaAs / Al _0.3 Ga _0.7 As quantum well active layer 3 is not etched Thus, the n-Al _0.55 Ga _0.45 As current blocking layer 8 is etched.

As a result, a gentle inclined surface in which the acute angle portion formed at the boundary surface between the p-In _0.2 Ga _0.8 As _0.6 P _0.4 etching blocking layer 6 and the n-Al _0.55 Ga _0.45 As current blocking layer 8 is rounded to some extent. To be etched. As a result, the center of the optical density is drawn toward the center on the third cladding layer 7 side, and the optical density of the GaAs / Al _0.3 Ga _0.7 As quantum well active layer 3 is reduced. In addition, the growth seeds at the initial stage of growth tend to adhere and the growth becomes stable. As a result, even when the grating forming layer is sandwiched between the second cladding layers 4, the growth on the grating forming layer is stabilized and the reliability of the device is increased.

  By the way, in this example, the configuration of the semiconductor light emitting device having the ridge embedded structure or the internal stripe structure is illustrated and described, but the present invention can also be applied to the semiconductor light emitting device having the ridge structure. In the case of a semiconductor light emitting device having a ridge structure, if a material having a higher refractive index than the surrounding cladding layer is used as an etching blocking layer, the center of the light density is drawn to the center of the ridge forming layer side, and the light density of the quantum well active layer is reduced. Can be reduced. As a result, the maximum part of the light density distribution can be removed from the light emitting part. Further, in the case of the above-described semiconductor light emitting element having an internal stripe structure, the same effect as the above-described semiconductor light emitting element having a ridge embedded structure is obtained.

It is a fragmentary sectional view showing a semiconductor light emitting element of a 1st embodiment concerning the present invention. It is a fragmentary sectional view showing a semiconductor light emitting element of a 2nd embodiment concerning the present invention. It is a fragmentary sectional view showing a semiconductor light emitting element of a 3rd embodiment concerning the present invention. It is a fragmentary sectional view showing the conventional semiconductor light emitting element indicated by patent documents 1. It is a fragmentary sectional view showing the conventional semiconductor light emitting element indicated by patent documents 2. It is a fragmentary sectional view showing the conventional semiconductor light emitting element indicated by patent documents 3.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 2 First clad layer 3 Quantum well active layer 4 (4a, 4b) Second clad layer 5 Grating formation layer 6 Etching stop layer 7 Third clad layer (ridge formation layer)
8 Current blocking layer (buried growth layer)
9 Fourth cladding layer 10 Contact layer

Claims (6)

A plurality of layers including a first cladding layer (2), an active layer (3), a second cladding layer (4), an etching blocking layer (6) made of InGaAsP, and a third cladding layer (7) on a GaAs substrate (1). Are sequentially formed, and a current blocking layer (8) is disposed on the side of the third cladding layer.
Sequentially crystal-growing a first cladding layer, an active layer, a second cladding layer, an etching stop layer, and a third cladding layer on a GaAs substrate;
Forming a mask at a predetermined location of the third cladding layer;
Using the mask, the portion of the third cladding layer without the mask is removed until the etching stopper layer comes to the surface, and the surface of the etching stopper layer is etched to form the etching stopper layer and the third cladding. Forming a ridge forming layer including a gently inclined surface extending from the boundary between the layers to the etching stop layer side ;
Forming a current blocking layer on the side of the ridge formation layer containing a pre-Symbol gently inclined surface, without causing abnormal growth,
Removing the mask . A method of manufacturing a semiconductor light emitting device. As an etching solution used for etching the third cladding layer and the surface of the etch stop layer, claim 1, selectivity to the third cladding layer of the etch stop layer is characterized by using 3 to 10 of the material The manufacturing method of the semiconductor light-emitting device of description . On the GaAs substrate (1), the first cladding layer (2), the active layer (3) and the second cladding layer (4) made of an AlGaAs material , an etching stopper layer (6) made of InGaAsP , an AlGaAs material a plurality of layers including a current blocking layer (8) made of are sequentially formed, a plurality of partially including the selectively dividing removed by portions and the surface side of the current blocking layer, the third cladding layer (7) A method of manufacturing a semiconductor light emitting device having a structure in which a layer is formed ,
Sequentially growing a first cladding layer, an active layer, a second cladding layer, an etching stop layer, and a current blocking layer on a GaAs substrate;
Forming a mask at a predetermined location of the current blocking layer;
Using the mask, a portion of the current blocking layer without the mask is removed until the etching blocking layer is exposed on the surface, and the surface of the etching blocking layer is etched, and the etching blocking layer and the current blocking layer are removed. Forming a stripe portion including a gentle inclined surface extending from the boundary portion between them to the etching stopper layer side;
Removing the mask;
The method of manufacturing a semiconductor light emitting element characterized by comprising forming a third cladding layer on said stripe portion including the gently inclined surface, without causing abnormal growth. As an etchant used for etching the surface of said current blocking layer and the etch stop layer, as claimed in claim 3, wherein the selectivity to said current blocking layer of the etch stop layer is characterized by using 3 to 10 of the material A method for manufacturing a semiconductor light emitting device. 5. The method of manufacturing a semiconductor light-emitting element according to claim 2, wherein the etching solution is made of tartaric acid or phosphoric acid . The method of manufacturing a semiconductor device as claimed in any of claims 1 to 5 the thickness of the etch stop layer is being formed by 30nm or more.

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