JP3706510B2 - Temperature control method in plasma CVD apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to temperature control in a plasma CVD apparatus, such as a plasma CVD apparatus or a dry etching apparatus, in which a reactive gas is decomposed and reacted in a plasma atmosphere to form a film on a substrate surface placed on a substrate heating heater. Regarding the method.
[0002]
[Prior art]
Conventionally, a plasma CVD (PCVD) apparatus shown in FIG. 4 is known.
Reference numeral 1 in the figure indicates a film forming chamber. A panel heater 2 is disposed in the film forming chamber 1. In the film forming chamber 1, a positioner 3 that supports a substrate (not shown) at a position facing the heating surface of the panel heater 2 and is movable toward the panel heater 2 is disposed. In the film forming chamber 1, a film forming unit 4 is disposed behind the positioner 3 and is movable in the direction of arrow A. An ionization vacuum gauge 5 is disposed on the upper part of the film forming chamber 1. The ionization vacuum gauge 5 keeps the film forming chamber 1 at 1 × 10 ⁻⁶ Torr. A high vacuum line 8 with a turbo molecular pump 6 and a dry pump 7 interposed is connected to the film forming chamber 1.
[0003]
[Problems to be solved by the invention]
By the way, in such a PCVD apparatus, the film forming chamber 1 is kept in a high vacuum (1 × 10 ⁻⁶ Torr) during the waiting time until the unprocessed substrate is carried into the film forming chamber 1. Only the radiant heat of the panel heater 2 is used to heat the parts attached to the film chamber 1 (positioner 3, film forming unit 4, etc.). Therefore, the temperature is lowered as compared with the part temperature required in the actual film forming process, which adversely affects the film quality / film thickness distribution.
[0004]
The present invention has been made in consideration of such circumstances, and while waiting for an unprocessed substrate in the plasma CVD apparatus, the film forming unit is pressed against the heater, and a gas that does not contribute to the reaction is input into the film forming chamber. A temperature control method in a plasma CVD apparatus that can prevent a drop in temperature of a standing positioner or a film forming unit by supplying and maintaining the pressure in the film forming chamber at 1 to 3 Torr, and can improve film quality / film thickness distribution The purpose is to provide.
[0005]
Further, the present invention waits by pressing the positioner and the film forming unit against the heater when the heater is heated, and supplying a gas that does not contribute to the reaction into the film forming chamber to keep the pressure in the film forming chamber at 1 to 3 Torr. It is an object of the present invention to provide a temperature control method in a plasma CVD apparatus that can prevent a temperature drop of a positioner and a film forming unit therein and can shorten the start-up of the apparatus and improve the operation rate of the apparatus.
[0006]
[Means for Solving the Problems]
The first invention of the present application includes a film forming chamber, a panel heater disposed in the film forming chamber, a positioner disposed in a position facing the heating surface of the panel heater in the film forming chamber, and behind the positioner. A plasma comprising: a film forming unit arranged; a high vacuum line for precisely drawing the film forming chamber; and a roughing line provided between the high vacuum line and the film forming chamber for roughing the film forming chamber. In the CVD apparatus, while the unprocessed substrate is waiting in the plasma CVD apparatus, the film forming unit and the positioner are pressed against the heater, and a gas that does not contribute to the reaction is supplied to the film forming chamber. Is maintained at 1 to 3 Torr, a temperature control method in a plasma CVD apparatus.
[0007]
A second invention of the present application includes a film forming chamber, a panel heater disposed in the film forming chamber, a positioner disposed in a position facing the heating surface of the panel heater in the film forming chamber, and behind the positioner. A plasma comprising: a film forming unit arranged; a high vacuum line for precisely drawing the film forming chamber; and a roughing line provided between the high vacuum line and the film forming chamber for roughing the film forming chamber. In a CVD apparatus, plasma is characterized in that the positioner and the film forming unit are pressed against the heater when the heater is heated, and a gas that does not contribute to the reaction is supplied into the film forming chamber to maintain the pressure in the film forming chamber at 1 to 3 Torr. This is a temperature control method in a CVD apparatus.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in detail.
In the present invention, the high vacuum line is composed of, for example, an on-off valve connected to the film forming chamber, a turbo molecular pump (TMP), a turbo valve (TV), and a dry vacuum pump, as will be described later. The high vacuum line is evacuated to 10 ⁻⁶ Torr.
In the present invention, the roughing line includes, for example, an opening / closing valve connected to the film forming chamber and a motor control valve connected to the opening / closing valve. The film forming chamber is evacuated to 10 ⁻³ Torr by the roughing line.
[0009]
In the present invention, the film forming chamber is provided with a Baratron vacuum gauge, the vacuum controller and the motor controller valve interposed in the roughing line are electrically connected, and the vacuum gauge and the motor controller valve are used for pressure in the film forming chamber. Can be maintained at 1 to 3 Torr.
[0010]
In the present invention, it is preferable to provide a gas purge line for increasing the pressure in the deposition chamber by introducing a gas that does not contribute to the reaction into the deposition chamber. Here, examples of the gas that does not contribute to the reaction include any of H ₂ , Ar, and N ₂ .
[0011]
【Example】
Embodiments of the present invention will be described below with reference to the drawings. However, the numerical values and the like of the respective constituent members described in the following examples show an example and do not specify the scope of rights of the present invention.
[0012]
(Example 1)
Please refer to FIG.
Reference numeral 11 in the figure indicates a film forming chamber. A panel heater 12 is disposed in the film forming chamber 11. In the film forming chamber 11, a positioner 13 that supports a substrate (not shown) at a position facing the heating surface of the panel heater 12 and is movable toward the panel heater 12 side (arrow A side) is disposed. Yes. In the film forming chamber 11, a film forming unit 14 disposed behind the positioner 13 and movable in the direction of arrow A is disposed.
[0013]
In the state of FIG. 1, the positioner 13 and the film forming unit 14 are moved to the panel heater 12 side, the positioner 13 is brought into close contact with the heating surface of the panel heater 12, and the film forming unit 14 is connected to the panel heater via the positioner 13. 12 shows a pressed state. A Pirani vacuum gauge 15, an ionization vacuum gauge 16, and a Baratron vacuum gauge 17 are disposed above the film forming chamber 11, respectively. The Pirani gauge 15 measures a range of atmospheric pressure to 10 ⁻³ Torr, the ionization gauge 16 measures a range of 10 ⁻³ to 10 ⁻⁶ Torr, and the Baratron gauge 17 forms a process gas. This is for measuring the internal pressure when introduced into the chamber 11.
[0014]
The film forming chamber 11 is connected to a high vacuum line 22 including a first opening / closing valve 18, a turbo molecular pump (TMP) 19, a turbo valve (TV) 20, and a dry vacuum pump 21. The high vacuum line 22 between the TV 20 and the dry vacuum pump 21 and the film forming chamber 11 are connected by a roughing line 25 having a second opening / closing valve 23 and a motor control valve (MCV) 24 interposed therebetween. . The Baratron vacuum gauge 17 and the motor 24a of the MCV 24 are electrically connected. A purge gas line 26 for introducing H ₂ gas into the film forming chamber 11 is connected to the film forming chamber 11.
[0015]
The flowchart of the baking mode control (temperature control) in the PCVD apparatus having such a configuration is as shown in FIG. That is, in the mass production line, when the unprocessed substrate does not reach the CVD apparatus after waiting for a certain time (about 15 minutes), the substrate is switched to the substrate standby mode (film formation chamber temperature drop prevention function). That is, first, the high vacuum line 22 is in an open state, and the roughing line 25 is in a closed state. Next, when the baking mode command is received, the baking mode is started, the positioner 13 is placed at a position for catching an unprocessed substrate, the film forming unit 14 is placed at a deposition position, and H ₂ gas is introduced from the purge gas line 28. The inside of the film forming chamber 11 is held at 3 Torr. When the substrate arrives, the high vacuum line 22 is closed in the order of the first control valve 18 and the TV 20 in response to a signal. Subsequently, for example, after 30 seconds, the operation is performed with high vacuum exhaust (1 × 10 ⁻⁶ Torr). Note that the baking mode can be monitored at any time, and the normal substrate on which the unprocessed substrate has arrived is formed, and when the unprocessed substrate has not arrived, the baking mode is entered. Further, if the unprocessed substrate is not carried into the PCVD apparatus for a certain period of time, the film forming chamber mounting parts such as the positioner 13 and the film forming unit 14 are moved to the same positions as in the film forming process and are in close contact with the panel heater 12. To prevent the temperature of the mounting parts from dropping.
[0016]
According to the first embodiment, during the standby in the plasma CVD apparatus, the positioner 13 and the film forming unit 14 are pressed against the panel heater 12, and H2 is supplied into the film forming chamber 11 into the film forming chamber 11 to form the film. Since the pressure of the chamber 11 is maintained at 3 Torr, the heat propagation of the panel heater 12 can be increased, the temperature effect of the inner wall of the film forming chamber 11 can be prevented, and the temperature drop of the positioner 13 and the film forming unit 14 can be prevented. Therefore, the film quality and film thickness distribution formed on the substrate can be improved as compared with the prior art.
[0017]
(Example 2)
Please refer to FIG. FIG. 3 shows a flowchart of baking mode control in the PCVD apparatus according to the second embodiment. However, the same PCVD apparatus as that in FIG. 1 is used.
In the second embodiment, considering that the shortening of the start-up time after overhaul is a very important issue in the mass production line CVD apparatus, the positioner 13 is used when the heater is heated and when the heater is heated. The film forming unit 14 was pressed against the panel heater 12 and a gas that did not contribute to the reaction was supplied into the film forming chamber 11 to keep the pressure in the film forming chamber 11 at 3 Torr.
[0018]
A specific flowchart is as shown in FIG. First, the temperature of the film forming chamber 11 is started. Next, the panel heater 12 of the film forming chamber 11 was turned on. Subsequently, the positioner 13 introduces H ₂ gas into the film forming chamber 11 in a state where the unprocessed substrate is caught and the film forming unit 14 is in a film deposition position. Then, the pressure in the film forming chamber 11 was maintained at 3 Torr using the roughing line 25. Further, after 8 minutes, the valve of the H ₂ line 28 was closed, and the film forming chamber 11 was evacuated using the high vacuum line 22. Thereby, the inside of the film forming chamber 11 reached a high vacuum. Thereafter, the series of operations of (A) to (B) in FIG. 3 was repeatedly performed, and after 7200 seconds had elapsed, the high-speed temperature increase was completed.
[0019]
According to the second embodiment, when the heater is heated when the PCVD apparatus is started up, the positioner 13 and the film forming unit 14 are pressed against the panel heater 12 when the heater is heated, and a gas that does not contribute to the reaction is supplied into the film forming chamber 11. By keeping the pressure in the film forming chamber 11 at 3 Torr, the apparatus start-up time can be shortened and the apparatus operation rate can be improved. In fact, the conventional startup time was 3 to 3.5 hours, whereas in Example 2, it was confirmed that the time can be reduced from 1.5 to 2 hours.
[0020]
【The invention's effect】
As described above in detail, according to the present invention, during the standby in the plasma CVD apparatus, the film forming unit is pressed against the heater, and a gas that does not contribute to the reaction is supplied to the film forming chamber. By maintaining the pressure at 1 to 3 Torr, it is possible to provide a temperature control method in the plasma CVD apparatus that can prevent the temperature drop of the waiting positioner and film forming unit and can improve the film quality / film thickness distribution.
[0021]
Further, according to the present invention, the positioner and the film forming unit are pressed against the heater when the heater is heated, and a gas that does not contribute to the reaction is supplied into the film forming chamber to maintain the pressure in the film forming chamber at 1 to 3 Torr. Further, it is possible to provide a temperature control method in a plasma CVD apparatus that can prevent a temperature drop of a standing positioner or a film-forming unit, and can shorten the start-up of the apparatus and improve the apparatus operating rate.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram of a PCVD apparatus according to Embodiment 1 of the present invention.
FIG. 2 is a flowchart of baking mode control in the apparatus of FIG.
FIG. 3 is a flowchart of baking mode control in a PCVD apparatus according to Embodiment 2 of the present invention.
FIG. 4 is an explanatory diagram of a conventional PCVD apparatus.
[Explanation of symbols]
11 ... film formation room,
12 ... Panel heater,
13 ... positioner,
14 ... film forming unit,
15 ... Pirani vacuum gauge,
16 ... Ionization gauge,
17 ... Baratron vacuum gauge,
18, 23 ... control valve,
19 ... turbo molecular pump (TMP),
20 ... Turbo valve (TV),
21 ... Dry vacuum pump,
22 ... High vacuum line,
24 ... Motor control valve (MCV),
25 ... Rough drawing line,
26 Purge gas line.

Claims (6)

A film forming chamber, a panel heater disposed in the film forming chamber, a positioner disposed in a position facing the heating surface of the panel heater in the film forming chamber, and a film forming unit disposed behind the positioner In a plasma CVD apparatus comprising a high vacuum line for precisely drawing the film forming chamber, and a rough drawing line provided between the high vacuum line and the film forming chamber for roughing the film forming chamber,
While waiting for the unprocessed substrate in the plasma CVD apparatus, the film forming unit and the positioner are pressed against the heater, and a gas that does not contribute to the reaction is supplied to the film forming chamber to increase the pressure in the film forming chamber to 1 to 3 Torr. The temperature control method in the plasma CVD apparatus characterized by holding | maintaining to. A film forming chamber, a panel heater disposed in the film forming chamber, a positioner disposed in a position facing the heating surface of the panel heater in the film forming chamber, and a film forming unit disposed behind the positioner In a plasma CVD apparatus comprising a high vacuum line for precisely drawing the film forming chamber, and a rough drawing line provided between the high vacuum line and the film forming chamber for roughing the film forming chamber,
The temperature in the plasma CVD apparatus is characterized by pressing the positioner and the film forming unit against the heater when the heater is heated, and supplying a gas that does not contribute to the reaction into the film forming chamber to maintain the pressure in the film forming chamber at 1 to 3 Torr. Control method. 3. The plasma CVD apparatus according to claim 1, wherein the high vacuum line has a configuration in which an open / close valve, a turbo molecular pump, a turbo valve, and a dry vacuum pump are sequentially provided from the film forming chamber side. Temperature control method. The temperature control method in the plasma CVD apparatus according to claim 1 or 2, wherein the roughing line is configured such that an open / close valve and a motor control valve are sequentially provided from the film forming chamber side. A Baratron vacuum gauge is provided in the film forming chamber, the vacuum gauge and the control valve are electrically connected, and the pressure in the film forming chamber is maintained at 1 to 3 Torr by the vacuum gauge and the control valve. 4. A temperature control method in the plasma CVD apparatus according to 3. Gas which does not contribute to the _reaction, H 2, Ar, temperature control method in the plasma CVD apparatus according to claim 1, wherein a is _either N 2.

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