JP2001081559A - Temperature controlling method in plasma cvd system - Google Patents
Temperature controlling method in plasma cvd systemInfo
- Publication number
- JP2001081559A JP2001081559A JP25584299A JP25584299A JP2001081559A JP 2001081559 A JP2001081559 A JP 2001081559A JP 25584299 A JP25584299 A JP 25584299A JP 25584299 A JP25584299 A JP 25584299A JP 2001081559 A JP2001081559 A JP 2001081559A
- Authority
- JP
- Japan
- Prior art keywords
- film forming
- forming chamber
- positioner
- plasma cvd
- cvd apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、プラズマＣＶＤ装
置、ドライエッチング装置などの、反応性ガスをプラズ
マ雰囲気で分解反応させて基板加熱用ヒータに載置され
た基板表面に製膜等の処理を行うプラズマＣＶＤ装置に
おける温度制御方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a process for forming a film on a surface of a substrate mounted on a substrate heating heater by decomposing a reactive gas in a plasma atmosphere, such as a plasma CVD apparatus and a dry etching apparatus. The present invention relates to a temperature control method in a plasma CVD apparatus to be performed.
【０００２】[0002]
【従来の技術】従来、プラズマＣＶＤ（ＰＣＶＤ）装置
としては、図４に示すものが知られている。図中の符番
１は、製膜室を示す。前記製膜室１には、パネルヒータ
２が配置されている。また、製膜室１内には、前記パネ
ルヒータ２の加熱面に向き合う位置に基板（図示せず）
を支持してパネルヒータ２側に移動可能なポジショナ３
が配置されている。また、前記製膜室１内には、前記ポ
ジショナ３の背後に配置されて矢印Ａ方向に移動可能な
製膜ユニット４が配置されている。前記製膜室１の上部
には、電離真空計５が配置されている。この電離真空計
５により製膜室１内は１×１０−６Ｔｏｒｒに保持され
る。前記製膜室１には、ターボ分子ポンプ６、ドライポ
ンプ７を介装した高真空ライン８が接続されている。2. Description of the Related Art Conventionally, a plasma CVD (PCVD) apparatus shown in FIG. 4 is known. Reference numeral 1 in the figure indicates a film forming chamber. A panel heater 2 is disposed in the film forming chamber 1. In the film forming chamber 1, a substrate (not shown) is provided at a position facing the heating surface of the panel heater 2.
Positioner 3 that can move toward panel heater 2 while supporting
Is arranged. Further, in the film forming chamber 1, a film forming unit 4 which is disposed behind the positioner 3 and is movable in the direction of arrow A is disposed. An ionization vacuum gauge 5 is disposed above the film forming chamber 1. The inside of the film forming chamber 1 is maintained at 1 × 10 −6 Torr by the ionization vacuum gauge 5. A high vacuum line 8 having a turbo molecular pump 6 and a dry pump 7 interposed is connected to the film forming chamber 1.
【０００３】[0003]
【発明が解決しようとする課題】ところで、こうしたＰ
ＣＶＤ装置において、未処理基板が製膜室１に搬入され
るまでの待ち時間の間は製膜室１は、高真空（１×１０
−６Ｔｏｒｒ）に保たれているため、製膜室１取付け部
品（ポジショナ３、製膜ユニット４など）の加熱はパネ
ルヒータ２の輻射熱のみとなる。従って、実際の製膜プ
ロセスで求められる部品温度に比較して温度が下がって
しまい、膜質／膜厚分布に悪い影響を与えていた。By the way, such P
In the CVD apparatus, during a waiting time until an unprocessed substrate is carried into the film forming chamber 1, the film forming chamber 1 is kept in a high vacuum (1 × 10
−6 Torr), the heating of the components (such as the positioner 3 and the film forming unit 4) attached to the film forming chamber 1 is performed only by the radiant heat of the panel heater 2. Therefore, the temperature is lowered as compared with the component temperature required in the actual film forming process, which has a bad influence on the film quality / film thickness distribution.
【０００４】本発明はこうした事情を考慮してなされた
もので、プラズマＣＶＤ装置内での未処理基板の待機
中、製膜ユニットをヒータに押しつけるとともに、製膜
室に反応に寄与しないガスを製膜室内に供給して製膜室
の圧を１〜３Ｔｏｒｒに保持することにより、待機中の
ポジショナや製膜ユニットの温度の降下を防止でき、膜
質／膜厚分布を改善し得るプラズマＣＶＤ装置における
温度制御方法を提供することを目的とする。[0004] The present invention has been made in view of such circumstances, and during the waiting of an unprocessed substrate in a plasma CVD apparatus, the film forming unit is pressed against the heater and gas that does not contribute to the reaction is formed in the film forming chamber. By supplying the film into the film forming chamber and keeping the pressure of the film forming chamber at 1 to 3 Torr, it is possible to prevent the temperature of the positioner and the film forming unit during standby from dropping and to improve the film quality / film thickness distribution. It is an object to provide a temperature control method.
【０００５】また、本発明は、ヒータ昇温時にポジショ
ナ及び製膜ユニットをヒータに押しつけるとともに、反
応に寄与しないガスを成膜室内に供給して成膜室の圧を
１〜３Ｔｏｒｒに保持することにより、待機中のポジシ
ョナや製膜ユニットの温度の降下を防止でき、装置の立
ち上げを短縮して装置稼働率を向上し得るプラズマＣＶ
Ｄ装置における温度制御方法を提供することを目的とす
る。Further, the present invention is to press the positioner and the film forming unit against the heater when the temperature of the heater is raised, and to supply a gas not contributing to the reaction into the film forming chamber to maintain the pressure of the film forming chamber at 1 to 3 Torr. As a result, it is possible to prevent the temperature of the positioner and the film forming unit during standby from dropping, and to shorten the start-up of the apparatus and improve the operation rate of the apparatus.
An object of the present invention is to provide a temperature control method for a D device.
【０００６】[0006]
【課題を解決するための手段】本願第１の発明は、製膜
室と、この製膜室内に配置されたパネルヒータと、前記
製膜室内に前記パネルヒータの加熱面に向き合う位置に
配置されたポジショナと、このポジショナの背後に配置
された製膜ユニットと、前記製膜室を精密引きする高真
空ラインと、前記高真空ラインと製膜室間に設けられ、
前記製膜室内を粗引きする粗引きラインとを具備したプ
ラズマＣＶＤ装置において、プラズマＣＶＤ装置内での
未処理基板の待機中、製膜ユニット及びポジショナをヒ
ータに押しつけるとともに、製膜室に反応に寄与しない
ガスを製膜室内に供給して製膜室の圧を１〜３Ｔｏｒｒ
に保持することを特徴とするプラズマＣＶＤ装置におけ
る温度制御方法である。According to a first aspect of the present invention, there is provided a film forming chamber, a panel heater disposed in the film forming chamber, and a panel heater disposed in the film forming chamber at a position facing a heating surface of the panel heater. A positioner, a film forming unit disposed behind the positioner, a high vacuum line for precisely drawing the film forming chamber, and a high vacuum line provided between the high vacuum line and the film forming chamber.
In a plasma CVD apparatus provided with a roughing line for roughing the film forming chamber, the film forming unit and the positioner are pressed against the heater while the unprocessed substrate is waiting in the plasma CVD apparatus, and the reaction is performed in the film forming chamber. A gas that does not contribute is supplied into the film forming chamber and the pressure in the film forming chamber is set to 1 to 3 Torr
A temperature control method in a plasma CVD apparatus, characterized in that the temperature is maintained at
【０００７】本願第２の発明は、製膜室と、この製膜室
内に配置されたパネルヒータと、前記製膜室内に前記パ
ネルヒータの加熱面に向き合う位置に配置されたポジシ
ョナと、このポジショナの背後に配置された製膜ユニッ
トと、前記製膜室を精密引きする高真空ラインと、前記
高真空ラインと製膜室間に設けられ、前記製膜室内を粗
引きする粗引きラインとを具備したプラズマＣＶＤ装置
において、ヒータ昇温時にポジショナ及び製膜ユニット
をヒータに押しつけるとともに、反応に寄与しないガス
を製膜室内に供給して製膜室の圧を１〜３Ｔｏｒｒに保
持することを特徴とするプラズマＣＶＤ装置における温
度制御方法である。According to a second aspect of the present invention, there is provided a film forming chamber, a panel heater disposed in the film forming chamber, a positioner disposed in the film forming chamber at a position facing a heating surface of the panel heater, and this positioner. And a high vacuum line for precisely drawing the film forming chamber, and a rough drawing line provided between the high vacuum line and the film forming chamber and roughing the film forming chamber. In the plasma CVD apparatus provided, the positioner and the film forming unit are pressed against the heater when the temperature of the heater is raised, and a gas that does not contribute to the reaction is supplied into the film forming chamber to maintain the pressure of the film forming chamber at 1 to 3 Torr. Is a temperature control method in the plasma CVD apparatus.
【０００８】[0008]
【発明の実施の形態】以下、本発明について詳述する。
本発明において、高真空ラインは、例えば後述するよう
に、製膜室に接続された開閉弁と、ターボ分子ポンプ
（ＴＭＰ）と、ターボバルブ（ＴＶ）と乾式真空ポンプ
とから構成されている。高真空ラインは、〜１０−６Ｔ
ｏｒｒまで真空引きされる。本発明において、前記粗引
きラインは、例えば前記製膜室に接続された開閉バルブ
と、この開閉バルブに接続されたモータコントロールバ
ルブとから構成されている。粗引きラインにより、製膜
室内は〜１０−３Ｔｏｒｒまで真空引きされる。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail.
In the present invention, the high vacuum line includes, for example, an on-off valve connected to a film forming chamber, a turbo molecular pump (TMP), a turbo valve (TV), and a dry vacuum pump, as described later. High vacuum line is 10 -6 T
It is evacuated to orr. In the present invention, the roughing line includes, for example, an open / close valve connected to the film forming chamber and a motor control valve connected to the open / close valve. The film forming chamber is evacuated to -10 -3 Torr by the roughing line.
【０００９】本発明において、製膜室にバラトロン真空
計を設け、この真空計と粗引きラインに介装された前記
モーターコントローラバルブを電気的に接続させ、前記
真空計及びモーターコントローラバルブにより製膜室内
の圧を１〜３Ｔｏｒｒに保持することができる。In the present invention, a Baratron vacuum gauge is provided in the film forming chamber, and the vacuum gauge and the motor controller valve interposed in the roughing line are electrically connected, and the film is formed by the vacuum gauge and the motor controller valve. The pressure in the room can be maintained at 1 to 3 Torr.
【００１０】本発明において、製膜室には反応に寄与し
ないガスを導入して製膜室内の圧力を上げるためのガス
パージラインを設けることが好ましい。ここで、反応に
寄与しないガスとしては、例えばＨ２、Ａｒ、Ｎ２のい
ずれかが挙げられる。In the present invention, it is preferable to provide a gas purge line for introducing a gas that does not contribute to the reaction to increase the pressure in the film forming chamber. Here, the gas that does not contribute to the reaction includes, for example, any one of H 2 , Ar, and N 2 .
【００１１】[0011]
【実施例】以下、本発明の各実施例を図面参照して説明
する。但し、下記実施例に述べられる各構成部材の数値
等は一例を示すもので、本発明の権利範囲を特定するも
のではない。Embodiments of the present invention will be described below with reference to the drawings. However, the numerical values and the like of the respective components described in the following examples are merely examples, and do not specify the scope of the present invention.
【００１２】（実施例１）図１を参照する。図中の付番
１１は、製膜室を示す。前記製膜室１１には、パネルヒ
ータ１２が配置されている。また、製膜室１１内には、
前記パネルヒータ１２の加熱面に向き合う位置に基板
（図示せず）を支持してパネルヒータ１２側（矢印Ａ
側）に移動可能なポジショナ１３が配置されている。ま
た、前記製膜室１１内には、前記ポジショナ１３の背後
に配置されて矢印Ａ方向に移動可能な製膜ユニット１４
が配置されている。(Embodiment 1) Referring to FIG. Reference numeral 11 in the figure indicates a film forming chamber. A panel heater 12 is disposed in the film forming chamber 11. In the film forming chamber 11,
A substrate (not shown) is supported at a position facing the heating surface of the panel heater 12 to support the panel heater 12 (arrow A).
The positioner 13 that can move to the (side) is arranged. Further, in the film forming chamber 11, a film forming unit 14 disposed behind the positioner 13 and movable in the direction of arrow A is provided.
Is arranged.
【００１３】なお、図１の状態は、ポジショナ１３及び
製膜ユニット１４がパネルヒータ１２側に移動させ、ポ
ジショナ１３をパネルヒータ１２の加熱面に密着させ、
かつ製膜ユニット１４はポジショナ１３を介してパネル
ヒータ１２に押し付けた状態を示す。前記製膜室１１の
上部には、ピラニー真空計１５、電離真空計１６、バラ
トロン真空計１７が夫々配置されている。前記ピラニー
真空計１５は大気圧〜１０−３Ｔｏｒｒの範囲を測定
し、前記電離真空計１６は１０−３〜１０−６Ｔｏｒｒ
の範囲を測定し、前記バラトロン真空計１７はプロセス
ガスを製膜室１１に導入したときに内圧を測定するため
のものである。In the state shown in FIG. 1, the positioner 13 and the film forming unit 14 are moved to the panel heater 12 side, and the positioner 13 is brought into close contact with the heating surface of the panel heater 12.
The film forming unit 14 is in a state where it is pressed against the panel heater 12 via the positioner 13. Above the film forming chamber 11, a Pirani vacuum gauge 15, an ionization vacuum gauge 16, and a Baratron vacuum gauge 17 are arranged, respectively. The Pirani gauge 15 measures the range of atmospheric pressure to 10 -3 Torr, and the ionization gauge 16 measures 10 -3 to 10 -6 Torr.
The Baratron vacuum gauge 17 is for measuring the internal pressure when the process gas is introduced into the film forming chamber 11.
【００１４】前記製膜室１１には、第１の開閉バルブ１
８、ターボ分子ポンプ（ＴＭＰ）１９、ターボバルブ
（ＴＶ）２０及び乾式真空ポンプ２１を夫々介装した高
真空ライン２２が接続されている。また、前記ＴＶ２
０，乾式真空ポンプ２１間の高真空ライン２２と製膜室
１１とは、第２の開閉バルブ２３、モーターコントロー
ルバルブ（ＭＣＶ）２４を介装した粗引きライン２５に
より接続されている。前記バラトロン真空計１７とＭＣ
Ｖ２４のモーター２４ａとは、電気的に接続されてい
る。前記製膜室１１には、製膜室１１内にＨ２ガスを導
入するパージガスライン２６が接続されている。A first opening / closing valve 1 is provided in the film forming chamber 11.
8. A high vacuum line 22 in which a turbo molecular pump (TMP) 19, a turbo valve (TV) 20, and a dry vacuum pump 21 are respectively connected is connected. In addition, the TV2
The high vacuum line 22 between the 0, dry vacuum pump 21 and the film forming chamber 11 are connected by a roughing line 25 in which a second opening / closing valve 23 and a motor control valve (MCV) 24 are interposed. The Baratron vacuum gauge 17 and MC
The motor 24a of the V24 is electrically connected. A purge gas line 26 for introducing H 2 gas into the film forming chamber 11 is connected to the film forming chamber 11.
【００１５】こうした構成のＰＣＶＤ装置におけるベー
キングモード制御（温度制御）のフローチャートは図２
に示す通りである。即ち、量産ラインにおいてＣＶＤ装
置に未処理基板がある一定時間（１５分程度）待っても
到達しない場合は、基板待機モード（製膜室温度降下防
止機能）に切り替わる。つまり、まず、高真空ライン２
２は開けた状態であり、粗引きライン２５は閉めた状態
になっている。次に、ベーキングモードの指令がきた
ら、ベーキングモードをスタートさせ、ポジショナ１３
は未処理基板をキャッチする位置に、製膜ユニット１４
は堆積位置に配置させ、パージガスライン２８からＨ２
ガスを導入して製膜室１１内を３Ｔｏｒｒに保持する。
そして、基板がきたら、信号を受けて高真空ライン２２
を第１の制御バルブ１８、ＴＶ２０の順に閉める。つづ
いて、例えば３０秒経過後、高真空排気（１×１０−６
Ｔｏｒｒ）で動作する。なお、ベーキングモードは随時
監視でき、未処理基板が到着した通常基板の製膜処理と
なり、未処理基板が到着していないときは、ベーキング
モードになる。また、未処理基板がある一定時間ＰＣＶ
Ｄ装置に搬入されなければ、ポジショナ１３、製膜ユニ
ット１４等の製膜室取付け部品を製膜プロセスの状態と
同様の位置に移動させ、パネルヒータ１２に密着した状
態で保持し、取付け部品の温度の低下を防止する。FIG. 2 is a flowchart of the baking mode control (temperature control) in the PCVD apparatus having such a configuration.
As shown in FIG. That is, in the case where the unprocessed substrate does not reach the CVD apparatus in the mass production line even after waiting for a certain period of time (about 15 minutes), the mode is switched to the substrate standby mode (the film forming chamber temperature drop prevention function). That is, first, the high vacuum line 2
Reference numeral 2 denotes an open state, and the roughing line 25 is in a closed state. Next, when the baking mode command is issued, the baking mode is started and the positioner 13 is started.
Is located at a position where an unprocessed substrate is to be caught.
Is disposed at the deposition position, and H 2 is supplied from the purge gas line 28.
The inside of the film forming chamber 11 is maintained at 3 Torr by introducing gas.
Then, when the substrate comes, the signal is received and the high vacuum line 22 is received.
Are closed in the order of the first control valve 18 and the TV 20. Subsequently, for example, after elapse of 30 seconds, high vacuum evacuation (1 × 10 −6) is performed.
Torr). The baking mode can be monitored at any time, and the film forming process is performed for a normal substrate on which an unprocessed substrate has arrived. When the unprocessed substrate has not arrived, the baking mode is set. In addition, the unprocessed substrate has a PCV for a certain period of time.
If it is not carried into the apparatus D, the film forming chamber mounting parts such as the positioner 13 and the film forming unit 14 are moved to the same position as the state of the film forming process, and held in a state of being in close contact with the panel heater 12, and Prevent temperature drop.
【００１６】上記実施例１によれば、プラズマＣＶＤ装
置内での待機中、ポジショナ１３及び製膜ユニット１４
をパネルヒータ１２に押しつけるとともに、製膜室１１
にＨ２を製膜室１１内に供給して製膜室１１の圧を３Ｔ
ｏｒｒに保持するため、パネルヒータ１２の熱伝播を高
め、製膜室１１の内壁の温度効果を防止するとともに、
ポジショナ１３及び製膜ユニット１４の温度低下を防止
できる。従って、基板に製膜する膜質及び膜厚分布を従
来と比べ改善できる。According to the first embodiment, during standby in the plasma CVD apparatus, the positioner 13 and the film forming unit 14
Is pressed against the panel heater 12 and the film forming chamber 11 is pressed.
Is supplied to the film forming chamber 11 to reduce the pressure of the film forming chamber 11 to 3T.
In order to maintain the temperature at orr, the heat propagation of the panel heater 12 is increased to prevent the temperature effect of the inner wall of the film forming chamber 11 and
The temperature of the positioner 13 and the film forming unit 14 can be prevented from lowering. Therefore, the quality and film thickness distribution of the film formed on the substrate can be improved as compared with the related art.
【００１７】（実施例２）図３を参照する。図３は実施
例２に係るＰＣＶＤ装置におけるベーキングモード制御
のフローチャートを示す。但し、ＰＣＶＤ装置は図１と
同様な装置を用いる。本実施例２では、量産ラインＣＶ
Ｄ装置においてオーバーホール後の立ち上げ時間の短縮
が非常に重要な課題であることを考慮して、ＰＣＶＤ装
置立ち上げ時のヒータ昇温時に、ヒータ昇温時にポジシ
ョナ１３及び製膜ユニット１４をパネルヒータ１２に押
しつけるとともに、反応に寄与しないガスを製膜室１１
内に供給して製膜室１１の圧を３Ｔｏｒｒに保持した。(Embodiment 2) Referring to FIG. FIG. 3 is a flowchart of the baking mode control in the PCVD apparatus according to the second embodiment. However, a PCVD apparatus similar to that shown in FIG. 1 is used. In the second embodiment, the mass production line CV
Considering that it is very important to shorten the start-up time after overhaul in the D apparatus, the positioner 13 and the film forming unit 14 are connected to the panel heater at the time of heating the heater when the PCVD apparatus is started. And presses gas not contributing to the reaction.
And the pressure in the film forming chamber 11 was maintained at 3 Torr.
【００１８】具体的なフローチャートは、図３に示す通
りである。まず、製膜室１１の昇温を開始する。次に、
製膜室１１のパネルヒータ１２をＯＮした。つづいて、
ポジショナ１３は未処理基板をキャッチする位置にかつ
製膜ユニット１４は膜堆積位置の状態でＨ２ガスを製膜
室１１内に導入する。そして、粗引きライン２５を用い
て製膜室１１内の圧力を３Ｔｏｒｒに保持した。更に、
８分経過後、Ｈ２ライン２８の弁を閉じ、製膜室１１内
を高真空ライン２２を用いて排気した。これにより、製
膜室１１内が高真空に到達した。この後、図３の（Ａ）
〜（Ｂ）の一連の操作を繰り返し行い、７２００秒経過
後、高速昇温が終了した。A specific flowchart is as shown in FIG. First, the temperature rise of the film forming chamber 11 is started. next,
The panel heater 12 in the film forming chamber 11 was turned on. Then,
The positioner 13 introduces H 2 gas into the film forming chamber 11 at a position where the unprocessed substrate is caught and the film forming unit 14 is at a film deposition position. Then, the pressure in the film forming chamber 11 was maintained at 3 Torr by using the roughing line 25. Furthermore,
After a lapse of 8 minutes, the valve of the H 2 line 28 was closed, and the inside of the film forming chamber 11 was evacuated using the high vacuum line 22. Thereby, the inside of the film forming chamber 11 reached a high vacuum. Thereafter, FIG.
A series of operations (B) to (B) were repeated, and after elapse of 7,200 seconds, the high-speed temperature raising was completed.
【００１９】実施例２によれば、ＰＣＶＤ装置立ち上げ
時のヒータ昇温時に、ヒータ昇温時にポジショナ１３及
び製膜ユニット１４をパネルヒータ１２に押しつけると
ともに、反応に寄与しないガスを成膜室１１内に供給し
て成膜室１１の圧を３Ｔｏｒｒに保持することにより、
装置立ち上げ時間が短縮され、装置稼動率を向上でき
る。事実、従来立ち上げ時間は３〜３．５時間であった
のに対し、実施例２では１．５から２時間に短縮できる
ことが確認された。According to the second embodiment, when the heater is heated when the PCVD apparatus is started, the positioner 13 and the film forming unit 14 are pressed against the panel heater 12 when the heater is heated, and the gas not contributing to the reaction is supplied to the film forming chamber 11. To maintain the pressure of the film forming chamber 11 at 3 Torr.
The apparatus start-up time is shortened, and the operation rate of the apparatus can be improved. In fact, it has been confirmed that the start-up time can be reduced from 1.5 to 2 hours in Example 2 in contrast to the conventional startup time of 3 to 3.5 hours.
【００２０】[0020]
【発明の効果】以上詳述したように本発明によれば、プ
ラズマＣＶＤ装置内での待機中、製膜ユニットをヒータ
に押しつけるとともに、製膜室に反応に寄与しないガス
を製膜室内に供給して製膜室の圧を１〜３Ｔｏｒｒに保
持することにより、待機中のポジショナや製膜ユニット
の温度の降下を防止でき、膜質／膜厚分布を改善し得る
プラズマＣＶＤ装置における温度制御方法を提供でき
る。As described above in detail, according to the present invention, during standby in a plasma CVD apparatus, a film forming unit is pressed against a heater and a gas which does not contribute to a reaction in the film forming chamber is supplied into the film forming chamber. By maintaining the pressure of the film forming chamber at 1 to 3 Torr, it is possible to prevent the temperature of the stand-by positioner and the film forming unit from dropping and to improve the film quality / film thickness distribution. Can be provided.
【００２１】また、本発明によれば、ヒータ昇温時にポ
ジショナ及び製膜ユニットをヒータに押しつけるととも
に、反応に寄与しないガスを成膜室内に供給して成膜室
の圧を１〜３Ｔｏｒｒに保持することにより、待機中の
ポジショナや製膜ユニットの温度の降下を防止でき、装
置の立ち上げを短縮して装置稼働率を向上し得るプラズ
マＣＶＤ装置における温度制御方法を提供できる。Further, according to the present invention, when the temperature of the heater is raised, the positioner and the film forming unit are pressed against the heater, and gas not contributing to the reaction is supplied into the film forming chamber to maintain the pressure of the film forming chamber at 1 to 3 Torr. By doing so, it is possible to provide a temperature control method in a plasma CVD apparatus that can prevent a drop in the temperature of the positioner or the film forming unit in a standby state and can shorten the start-up of the apparatus and improve the operation rate of the apparatus.
【図１】本発明の実施例１に係るＰＣＶＤ装置の説明
図。FIG. 1 is an explanatory diagram of a PCVD apparatus according to a first embodiment of the present invention.
【図２】図１の装置におけるベーキングモード制御のフ
ローチャート。FIG. 2 is a flowchart of baking mode control in the apparatus of FIG.
【図３】本発明の実施例２に係るＰＣＶＤ装置における
ベーキングモード制御のフローチャート。FIG. 3 is a flowchart of a baking mode control in a PCVD apparatus according to a second embodiment of the present invention.
【図４】従来のＰＣＶＤ装置の説明図。FIG. 4 is an explanatory view of a conventional PCVD apparatus.
１１…製膜室、 １２…パネルヒータ、 １３…ポジショナ、 １４…製膜ユニット、 １５…ピラニー真空計、 １６…電離真空計、 １７…バラトロン真空計、 １８、２３…制御バルブ、 １９…ターボ分子ポンプ（ＴＭＰ）、 ２０…ターボバルブ（ＴＶ）、 ２１…乾式真空ポンプ、 ２２…高真空ライン、 ２４…モーターコントロールバルブ（ＭＣＶ）、 ２５…粗引きライン、 ２６…パージガスライン。 11: film forming chamber, 12: panel heater, 13: positioner, 14: film forming unit, 15: Pirani vacuum gauge, 16: ionization vacuum gauge, 17: baratron vacuum gauge, 18, 23: control valve, 19: turbo molecule Pump (TMP), 20: turbo valve (TV), 21: dry vacuum pump, 22: high vacuum line, 24: motor control valve (MCV), 25: roughing line, 26: purge gas line.
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） // Ｂ０１Ｊ 19/08 Ｈ０１Ｌ 21/302 Ｂ Ｆターム(参考） 4G075 AA24 AA63 BA05 BC04 BC06 CA47 CA65 EB01 4G077 DB01 DB21 EG16 4K030 DA02 EA11 FA10 GA02 JA06 KA23 KA28 KA39 KA41 5F004 AA01 BB18 BB26 BC02 BC03 BD04 CA02 CA08 CB01 CB12 5F045 AA08 BB02 BB03 EB14 EE13 EE17 EK21 GB06 GB15 Continued on the front page (51) Int.Cl. 7 Identification code FI Theme coat II (reference) // B01J 19/08 H01L 21/302 B F term (reference) 4G075 AA24 AA63 BA05 BC04 BC06 CA47 CA65 EB01 4G077 DB01 DB21 EG16 4K030 DA02 EA11 FA10 GA02 JA06 KA23 KA28 KA39 KA41 5F004 AA01 BB18 BB26 BC02 BC03 BD04 CA02 CA08 CB01 CB12 5F045 AA08 BB02 BB03 EB14 EE13 EE17 EK21 GB06 GB15
Claims (6)
ネルヒータと、前記製膜室内に前記パネルヒータの加熱
面に向き合う位置に配置されたポジショナと、このポジ
ショナの背後に配置された製膜ユニットと、前記製膜室
を精密引きする高真空ラインと、前記高真空ラインと製
膜室間に設けられ、前記製膜室内を粗引きする粗引きラ
インとを具備したプラズマＣＶＤ装置において、 プラズマＣＶＤ装置内での未処理基板の待機中、製膜ユ
ニット及びポジショナをヒータに押しつけるとともに、
製膜室に反応に寄与しないガスを製膜室内に供給して製
膜室の圧を１〜３Ｔｏｒｒに保持することを特徴とする
プラズマＣＶＤ装置における温度制御方法。1. A film forming chamber, a panel heater disposed in the film forming chamber, a positioner disposed in a position facing a heating surface of the panel heater in the film forming chamber, and disposed behind the positioner. A plasma CVD apparatus comprising: a film forming unit; a high vacuum line for precisely drawing the film forming chamber; and a roughing line provided between the high vacuum line and the film forming chamber, for roughly drawing the film forming chamber. During the waiting of the unprocessed substrate in the plasma CVD apparatus, while pressing the film forming unit and the positioner against the heater,
A temperature control method in a plasma CVD apparatus, wherein a gas that does not contribute to a reaction is supplied to a film forming chamber and the pressure in the film forming chamber is maintained at 1 to 3 Torr.
ネルヒータと、前記製膜室内に前記パネルヒータの加熱
面に向き合う位置に配置されたポジショナと、このポジ
ショナの背後に配置された製膜ユニットと、前記製膜室
を精密引きする高真空ラインと、前記高真空ラインと製
膜室間に設けられ、前記製膜室内を粗引きする粗引きラ
インとを具備したプラズマＣＶＤ装置において、 ヒータ昇温時にポジショナ及び製膜ユニットをヒータに
押しつけるとともに、反応に寄与しないガスを製膜室内
に供給して製膜室の圧を１〜３Ｔｏｒｒに保持すること
を特徴とするプラズマＣＶＤ装置における温度制御方
法。2. A film forming chamber, a panel heater disposed in the film forming chamber, a positioner disposed in the film forming chamber at a position facing a heating surface of the panel heater, and disposed behind the positioner. A plasma CVD apparatus comprising: a film forming unit; a high vacuum line for precisely drawing the film forming chamber; and a roughing line provided between the high vacuum line and the film forming chamber, for roughly drawing the film forming chamber. In the plasma CVD apparatus, the positioner and the film forming unit are pressed against the heater when the temperature of the heater is raised, and a gas that does not contribute to the reaction is supplied into the film forming chamber to maintain the pressure of the film forming chamber at 1 to 3 Torr. Temperature control method.
子ポンプとターボバルブと乾式真空ポンプとを製膜室側
から順次介装した構成であることを特徴とする請求項１
もしくは請求項２記載のプラズマＣＶＤ装置における温
度制御方法。3. The high vacuum line has a structure in which an on-off valve, a turbo molecular pump, a turbo valve, and a dry vacuum pump are sequentially interposed from the film forming chamber side.
Alternatively, the temperature control method in the plasma CVD apparatus according to claim 2.
ントロールバルブを製膜室側から順次介装した構成であ
ることを特徴とする請求項１もしくは請求項２記載のプ
ラズマＣＶＤ装置における温度制御方法。4. The temperature control in the plasma CVD apparatus according to claim 1, wherein the roughing line has a structure in which an on-off valve and a motor control valve are sequentially interposed from the film forming chamber side. Method.
真空計と前記制御バルブを電気的に接続させ、前記真空
計及び制御バルブにより成膜室内の圧を１〜３Ｔｏｒｒ
に保持することを特徴とする請求項３記載のプラズマＣ
ＶＤ装置における温度制御方法。5. A Baratron vacuum gauge is provided in the film forming chamber, and the vacuum gauge and the control valve are electrically connected. The pressure in the film forming chamber is set to 1 to 3 Torr by the vacuum gauge and the control valve.
4. The plasma C according to claim 3, wherein
Temperature control method in VD device.
Ｎ２のいずれかであることを特徴とする請求項１記載の
プラズマＣＶＤ装置における温度制御方法。6. A gas that does not contribute to the reaction is H 2 , Ar,
2. The temperature control method for a plasma CVD apparatus according to claim 1, wherein the temperature control means is any one of N2.
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|---|---|---|---|
| JP25584299A JP3706510B2 (en) | 1999-09-09 | 1999-09-09 | Temperature control method in plasma CVD apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25584299A JP3706510B2 (en) | 1999-09-09 | 1999-09-09 | Temperature control method in plasma CVD apparatus |
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| Publication Number | Publication Date |
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| JP2001081559A true JP2001081559A (en) | 2001-03-27 |
| JP3706510B2 JP3706510B2 (en) | 2005-10-12 |
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|---|---|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007110045A (en) * | 2005-10-17 | 2007-04-26 | Mitsubishi Heavy Ind Ltd | Plasma enhanced cvd apparatus and temperature maintenance method thereof |
| JP2008192644A (en) * | 2007-01-31 | 2008-08-21 | Tokyo Electron Ltd | Method and equipment for treating substrate |
| WO2009031520A1 (en) | 2007-09-04 | 2009-03-12 | Sharp Kabushiki Kaisha | Plasma treatment apparatus, plasma treatment method, and semiconductor element |
| TWI465601B (en) * | 2012-03-21 | 2014-12-21 |
-
1999
- 1999-09-09 JP JP25584299A patent/JP3706510B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007110045A (en) * | 2005-10-17 | 2007-04-26 | Mitsubishi Heavy Ind Ltd | Plasma enhanced cvd apparatus and temperature maintenance method thereof |
| JP4718964B2 (en) * | 2005-10-17 | 2011-07-06 | 三菱重工業株式会社 | Plasma CVD apparatus and temperature maintaining method for plasma CVD apparatus |
| JP2008192644A (en) * | 2007-01-31 | 2008-08-21 | Tokyo Electron Ltd | Method and equipment for treating substrate |
| WO2009031520A1 (en) | 2007-09-04 | 2009-03-12 | Sharp Kabushiki Kaisha | Plasma treatment apparatus, plasma treatment method, and semiconductor element |
| US8395250B2 (en) | 2007-09-04 | 2013-03-12 | Kabushiki Kaisha Sharp | Plasma processing apparatus with an exhaust port above the substrate |
| TWI465601B (en) * | 2012-03-21 | 2014-12-21 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3706510B2 (en) | 2005-10-12 |
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