JP2003218046A - Heating element cvd apparatus and heating element cvd method using the same - Google Patents
Heating element cvd apparatus and heating element cvd method using the sameInfo
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- JP2003218046A JP2003218046A JP2002330926A JP2002330926A JP2003218046A JP 2003218046 A JP2003218046 A JP 2003218046A JP 2002330926 A JP2002330926 A JP 2002330926A JP 2002330926 A JP2002330926 A JP 2002330926A JP 2003218046 A JP2003218046 A JP 2003218046A
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、真空室（処理容器）内
に所定の温度に維持される発熱体を設け、原料ガスを前
記発熱体によって分解及び／又は活性化させ、真空室
（処理容器）内に配置されている基板上に薄膜を堆積さ
せる発熱体ＣＶＤ装置及び発熱体ＣＶＤ方法に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention provides a heating element which is maintained at a predetermined temperature in a vacuum chamber (processing container), decomposes and / or activates a raw material gas by the heating element, The present invention relates to a heating element CVD device and a heating element CVD method for depositing a thin film on a substrate arranged in a container.
【０００２】[0002]
【従来の技術】ＬＳＩ（大規模集積回路）を始めとする
各種半導体デバイスやＬＣＤ（液晶ディスプレイ）、な
らびに太陽電池等の作製においては、基板上に所定の薄
膜を形成するプロセスの一つとして、化学気相堆積（Ｃ
ＶＤ：Chemical Vapor Deposition ）法が広く用いられ
ている。2. Description of the Related Art In the fabrication of various semiconductor devices such as LSI (Large Scale Integrated Circuit), LCD (Liquid Crystal Display), and solar cells, one of the processes for forming a predetermined thin film on a substrate is as follows. Chemical vapor deposition (C
The VD (Chemical Vapor Deposition) method is widely used.
【０００３】ＣＶＤ法には、放電プラズマ中で原料ガス
を分解及び／又は活性化させて成膜を行うプラズマＣＶ
Ｄ法や基板を加熱してその熱により化学反応を生じさせ
て成膜を行う熱ＣＶＤ法等の他に、所定の高温に維持し
た発熱体により原料ガスを分解及び／又は活性化させて
成膜を行う方式のＣＶＤ法（以下、発熱体ＣＶＤ法と呼
ぶ）がある。発熱体ＣＶＤ法を行う成膜処理装置（発熱
体ＣＶＤ装置）は、真空排気可能な処理室内に設けられ
たタングステン等の高融点金属からなる発熱体を１００
０〜２０００℃程度の高温に維持しながら原料ガスを導
入するよう構成されている。導入された原料ガスは、発
熱体の表面を通過する際に分解や活性化され、これらが
基板に到達することにより最終的な目的物である材料の
薄膜（例えば、シリコン膜等）が、基板の表面に堆積す
る。In the CVD method, plasma CV for forming a film by decomposing and / or activating a source gas in discharge plasma
In addition to the D method and the thermal CVD method in which a substrate is heated to cause a chemical reaction by the heat to form a film, the source gas is decomposed and / or activated by a heating element maintained at a predetermined high temperature. There is a CVD method of forming a film (hereinafter referred to as a heating element CVD method). A film forming processing apparatus (heating element CVD apparatus) that performs the heating element CVD method uses a heating element made of a refractory metal such as tungsten provided in a processing chamber capable of evacuation.
The raw material gas is introduced while being maintained at a high temperature of about 0 to 2000 ° C. The introduced raw material gas is decomposed and activated when passing through the surface of the heating element, and when these reach the substrate, a thin film of the final target material (for example, a silicon film) is formed on the substrate. Deposit on the surface of.
【０００４】尚、このような発熱体ＣＶＤ法のうち、ワ
イヤ状の発熱体を用いるものについてはホットワイヤ
（Hot Wire）ＣＶＤ法と呼ばれ、また、発熱体による原
料ガスの分解あるいは活性化において発熱体の触媒反応
を利用しているものについては触媒ＣＶＤ（またはＣａ
ｔ−ＣＶＤ：Catalytic-CVD ）法と呼ばれる。Among such heating element CVD methods, a method using a wire-shaped heating element is called a hot wire CVD method, and in the decomposition or activation of the raw material gas by the heating element. For those utilizing the catalytic reaction of the heating element, catalytic CVD (or Ca
t-CVD: Catalytic-CVD) method.
【０００５】発熱体ＣＶＤ法では原料ガスの分解や活性
化は、発熱体を通過する際に起こるため、基板の熱のみ
によって反応を生じさせる熱ＣＶＤ法に比べて基板の温
度を低くできるという長所がある。また、プラズマＣＶ
Ｄ法のようにプラズマを形成することがないので、プラ
ズマによる基板へのダメージといった問題からも無縁で
ある。このようなことから、発熱体ＣＶＤ法は、高集積
化や高機能化が益々進む次世代のデバイス等の成膜法と
して有望視されている。In the heating element CVD method, decomposition and activation of the raw material gas occur when passing through the heating element, so that the temperature of the substrate can be lowered as compared with the thermal CVD method in which the reaction is caused only by the heat of the substrate. There is. In addition, plasma CV
Since plasma is not formed unlike the D method, it is free from the problem of plasma damage to the substrate. For these reasons, the heating element CVD method is considered to be promising as a film forming method for next-generation devices and the like, which are becoming more highly integrated and highly functionalized.
【０００６】しかし、このような有用性の高い発熱体Ｃ
ＶＤ法ではあるが、高品質な多結晶シリコン膜を再現性
よく安定して形成できるまでには至っていない。ここで
高品質な多結晶シリコン膜とは、電子デバイスとして、
例えば、電子移動度が２０ｃｍ２ ／Ｖｓまでに改善さ
れているものをさす。一般的に、発熱体ＣＶＤ装置を用
いてシリコン膜を形成した場合、多結晶の状態は実現さ
れるものの、成膜後の状態は結晶化度の良くなく、むし
ろ、アモルファスに近い膜質を呈していた。つまり、発
熱体ＣＶＤ法による成膜直後の多結晶シリコン膜は、産
業上、電子デバイスとして求められる品質には至ってい
なかった。However, such a highly useful heating element C
Although it is the VD method, it has not been possible to form a high quality polycrystalline silicon film with good reproducibility and stably. Here, a high-quality polycrystalline silicon film means an electronic device,
For example, the electron mobility is improved to 20 cm 2 / Vs. Generally, when a silicon film is formed using a heating element CVD apparatus, a polycrystalline state is realized, but the state after film formation is not good in crystallinity, and rather exhibits a film quality close to amorphous. It was That is, the polycrystalline silicon film immediately after being formed by the heating element CVD method has not reached the quality required for an electronic device in industry.
【０００７】そこで、本発明者は、鋭意研究により、処
理容器中のシリコン膜形成時の成膜環境の重要性、特に
原子状水素を維持、安定させることの重要性に注目し、
従来技術に無い、成膜環境が維持される装置構成及び成
膜方法の確立を目指した。[0007] Therefore, the present inventor, through diligent research, pays attention to the importance of the film forming environment at the time of forming a silicon film in a processing container, particularly the importance of maintaining and stabilizing atomic hydrogen.
The aim was to establish an apparatus configuration and film forming method that maintain a film forming environment that was not available in the prior art.
【０００８】つまり、シリコン膜の形成段階において
は、シラン（ＳｉＨ４ ）や水素（Ｈ２ ）の分解及び
／又は活性化過程で生成される原子状水素の失活を抑制
し、原子状水素が処理容器内に安定して存在できる環境
をつくることが、高品質な多結晶シリコン膜の形成に不
可欠という結論に達し、本発明にある発熱体ＣＶＤ装
置、発熱体ＣＶＤ方法として実用化を目指した。That is, in the step of forming a silicon film, the deactivation of atomic hydrogen generated in the process of decomposing and / or activating silane (SiH4) and hydrogen (H2) is suppressed, and atomic hydrogen is treated in the processing container. It was concluded that it is essential to form a high-quality polycrystalline silicon film in order to stably create an environment in which the heating element CVD apparatus and heating element CVD method according to the present invention are put into practical use.
【０００９】一方、シリコン膜は、発熱体によって原料
ガスであるシラン（ＳｉＨ４ ）や水素（Ｈ２ ）が、
分解及び／又は活性化されて基板上に形成されるが、シ
ラン（ＳｉＨ４ ）や水素（Ｈ２ ）の分解及び／又は
活性化過程で生成される原子状水素は、処理容器内壁に
も同時に堆積した付着膜との反応によって二次生成物を
発生させてしまうため、これが基板上の形成過程にある
シリコン膜の膜質に影響を与え、良質なシリコン膜が作
製されにくくしていることもわかってきている。On the other hand, in the silicon film, silane (SiH4) and hydrogen (H2), which are raw material gases, are generated by the heating element.
Although it is decomposed and / or activated to be formed on the substrate, atomic hydrogen generated in the decomposition and / or activation process of silane (SiH4) and hydrogen (H2) is simultaneously deposited on the inner wall of the processing container. It has also been found that secondary products are generated by the reaction with the adhered film, which affects the film quality of the silicon film in the process of forming on the substrate, making it difficult to produce a good quality silicon film. There is.
【００１０】このことは、例えば、第４８回応用物理学
関係連合講演会講演予稿集２００１２９ａ−ＺＱ−３、
ｐ．９４９において、増田淳、等によって報告されてい
る。[0012] For example, the proceedings of the 48th Joint Lecture on Applied Physics, 200129a-ZQ-3,
p. 949, reported by Atsushi Masuda, et al.
【００１１】[0011]
【発明が解決しようとする課題】この発明は、前述した
従来技術に鑑み、発熱体ＣＶＤ装置を用いてシリコン膜
を作製する場合において、デバイス上、高品質な多結晶
シリコン膜（ポリシリコン膜）を形成できる発熱体ＣＶ
Ｄ装置及び発熱体ＣＶＤ方法を提供することを目的とし
ている。In view of the above-mentioned prior art, the present invention provides a high quality polycrystalline silicon film (polysilicon film) on a device when a silicon film is produced using a heating element CVD apparatus. Heating element CV capable of forming
It is an object of the present invention to provide a D device and a heating element CVD method.
【００１２】[0012]
【課題を解決するための手段】本発明が提案する発熱体
ＣＶＤ装置は、従来公知の発熱体ＣＶＤ装置と同様に内
部に備えられている基板ホルダーに保持されている基板
に対して所定の処理がなされる処理容器（真空容器）
と、当該処理容器に接続されていて処理容器内を真空に
排気する排気系、及び、処理容器内に所定の原料ガスを
供給する原料ガス供給系と、当該処理容器内に配置され
ていて電力供給機構から電力供給を受けて高温にされる
発熱体とを備えているものである。そして、原料ガス供
給系から処理容器内に導入された原料ガスが高温に維持
されている発熱体によって分解及び／又は活性化され、
基板ホルダーに保持されている基板に薄膜が形成される
ものである。The heating element CVD apparatus proposed by the present invention, like the conventionally known heating element CVD apparatus, performs a predetermined process on a substrate held by a substrate holder provided therein. Processing container (vacuum container)
An exhaust system connected to the processing container to evacuate the inside of the processing container to a vacuum; a raw material gas supply system for supplying a predetermined raw material gas into the processing container; and an electric power arranged in the processing container. And a heating element which is heated to a high temperature by being supplied with electric power from a supply mechanism. Then, the source gas introduced into the processing container from the source gas supply system is decomposed and / or activated by the heating element maintained at a high temperature,
A thin film is formed on the substrate held by the substrate holder.
【００１３】かかる構成の発熱体ＣＶＤ装置において、
本願発明が提案する発熱体ＣＶＤ装置は、前記基板上に
薄膜を成膜中、前記基板ホルダーと発熱体との間の空間
を囲む構造体の内面が加熱されていることを特徴とする
ものである。In the heating element CVD apparatus having the above structure,
The heating element CVD apparatus proposed by the present invention is characterized in that an inner surface of a structure surrounding a space between the substrate holder and the heating element is heated during deposition of a thin film on the substrate. is there.
【００１４】本発明の発熱体ＣＶＤ装置によれば、基板
上に薄膜、例えば、シリコン膜を成膜中、基板ホルダー
と発熱体との間の空間を囲む構造体の内面が加熱されて
いることによって、原子状水素が前記空間に安定して存
在でき、かつ、シリコン膜の成膜過程で同時に発生して
いる二次生成物を低減させた環境をつくることができ
る。これによって、高品質な多結晶シリコン膜形成を可
能にできる。According to the heating element CVD apparatus of the present invention, the inner surface of the structure surrounding the space between the substrate holder and the heating element is heated during the formation of a thin film, for example, a silicon film on the substrate. As a result, atomic hydrogen can be stably present in the space, and an environment can be created in which the secondary products that are simultaneously generated during the film formation process of the silicon film are reduced. As a result, a high quality polycrystalline silicon film can be formed.
【００１５】なお、前記本発明の発熱体ＣＶＤ装置にお
いて、所定の処理とは、例えば、処理容器内に配置され
ている基板への薄膜の形成や、処理容器内部の付着物を
除去するクリーニング、などのことをいう。また、所定
の原料ガスは、成膜される薄膜により種々定められ、例
えば、シリコン膜を作製する場合には、シラン（ＳｉＨ
４ ）と水素（Ｈ２ ）の混合ガスが所定の原料ガスと
なる。また、シリコンカーバイド膜を作製する場合に
は、メタン（ＣＨ４ ）、アセチレン（Ｃ２ Ｈ２ ）
及び、エタン（Ｃ２ Ｈ６ ）の中の少なくとも一種以
上と、シラン（ＳｉＨ４ ）及び、水素（Ｈ２ ）の混
合ガスが所定の原料ガスとなる。シリコンゲルマニウム
膜を作製する場合には、シラン（ＳｉＨ４ ）とゲルマ
ン（ＧｅＨ４ ）及び水素（Ｈ２ ）の混合ガスが所定
の原料ガスとなる。更に、加熱された発熱体が維持する
高温とは、例えば、成膜時には１６００〜２０００℃程
度、クリーニング時（処理容器内部の付着物除去時）に
は２０００〜２５００℃程度のことをいう。In the heating element CVD apparatus of the present invention, the predetermined processing includes, for example, forming a thin film on the substrate arranged in the processing container, cleaning for removing deposits inside the processing container, And so on. Further, the predetermined source gas is variously determined depending on the thin film to be formed. For example, in the case of forming a silicon film, silane (SiH
The mixed gas of 4) and hydrogen (H2) becomes a predetermined raw material gas. In the case of producing a silicon carbide film, methane (CH4), acetylene (C2H2)
Also, a mixed gas of at least one kind of ethane (C2 H6), silane (SiH4) and hydrogen (H2) becomes a predetermined source gas. When a silicon germanium film is formed, a mixed gas of silane (SiH4), germane (GeH4) and hydrogen (H2) serves as a predetermined source gas. Furthermore, the high temperature maintained by the heated heating element means, for example, about 1600 to 2000 ° C. during film formation and about 2000 to 2500 ° C. during cleaning (when removing deposits inside the processing container).
【００１６】前記本発明の発熱体ＣＶＤ装置において、
基板ホルダーと発熱体との間の空間を囲む構造体は、電
力面での効率のよさを考慮して、それ自体に加熱機構を
備えている構造体、例えば、なんらかの治具であって、
基板ホルダーと発熱体との間の空間を囲むものであれ
ば、いかなるものでも採用することができる。In the heating element CVD apparatus of the present invention,
The structure surrounding the space between the substrate holder and the heating element is a structure having a heating mechanism in itself in consideration of efficiency in terms of electric power, for example, a jig.
Any material can be used as long as it surrounds the space between the substrate holder and the heating element.
【００１７】そこで、処理容器の内側壁の内側で、基板
ホルダーと発熱体との間の空間を囲むようにして設置さ
れていて、前記構造体の内面の加熱は、内蔵されている
加熱機構によって行われる加熱治具を、基板ホルダーと
発熱体との間の空間を囲む構造体として採用することが
できる。Therefore, it is installed inside the inner wall of the processing container so as to surround the space between the substrate holder and the heating element, and the inner surface of the structure is heated by the built-in heating mechanism. The heating jig can be adopted as a structure that surrounds the space between the substrate holder and the heating element.
【００１８】また、基板ホルダーと発熱体との間の空間
を囲む構造体を、処理容器の内側壁とし、前記構造体の
内面の加熱は、当該内側壁に内蔵されている加熱機構に
よって行われるようにすることも可能である。The structure surrounding the space between the substrate holder and the heating element is the inner wall of the processing container, and the inner surface of the structure is heated by the heating mechanism built in the inner wall. It is also possible to do so.
【００１９】なお、加熱機構は、例えば、ヒーターと、
温度検知センサーと、温度検知センサーからの信号をも
とにヒーターへの投入電力を調整する加熱温調器等とに
よって構成することができる。The heating mechanism includes, for example, a heater and
It can be configured by a temperature detection sensor and a heating temperature controller or the like that adjusts the electric power input to the heater based on a signal from the temperature detection sensor.
【００２０】また、前記本発明の発熱体ＣＶＤ装置にお
いて、加熱は、前記構造体の内面が少なくとも２００℃
以上に、好ましくは少なくとも３５０℃以上に加熱維持
されるものとすることができる。In the heating element CVD apparatus of the present invention, heating is performed at least 200 ° C. on the inner surface of the structure.
Above, it can be preferably maintained at a temperature of at least 350 ° C or higher.
【００２１】この構造体の内面を加熱維持する温度は、
発熱体ＣＶＤ装置が通常使用される圧力範囲、例えば、
数十Ｐａの領域では、少なくとも３５０℃以上にしてお
くことが望ましい。このような数十Ｐａの圧力領域にお
いては、少なくとも３５０℃以上に加熱維持されている
構造体の内面によって基板ホルダーと発熱体との間の空
間を囲むことにより、基板上に薄膜を成膜中、原子状水
素がこの空間に安定して存在でき、かつ、シリコン膜の
成膜過程で同時に発生している二次生成物を低減させた
環境をつくることができる。The temperature at which the inner surface of this structure is heated and maintained is
The pressure range in which the heating element CVD apparatus is normally used, for example,
In the region of several tens of Pa, it is desirable to keep at least 350 ° C. or higher. In such a pressure range of several tens Pa, a thin film is formed on the substrate by surrounding the space between the substrate holder and the heating element with the inner surface of the structure which is heated and maintained at at least 350 ° C. or higher. Atomic hydrogen can exist stably in this space, and an environment can be created in which secondary products that are simultaneously generated during the process of forming the silicon film are reduced.
【００２２】なお、発熱体ＣＶＤ装置をやや低い圧力範
囲、例えば、数Ｐａの領域で使用するときには、前記構
造体の内面を加熱維持する温度を少なくとも２００℃以
上としておけば、基板上に薄膜を成膜中、原子状水素が
基板ホルダーと発熱体との間の空間に安定して存在で
き、かつ、シリコン膜の成膜過程で同時に発生している
二次生成物を低減させた環境をつくることができる。そ
こで、発熱体ＣＶＤ装置が数Ｐａのやや低い圧力範囲で
使用されるときには、前記構造体の内面を加熱維持する
温度を少なくとも２００℃以上としておけば十分であ
る。When the heating element CVD apparatus is used in a slightly low pressure range, for example, in the region of several Pa, if the temperature for keeping the inner surface of the structure heated is at least 200 ° C. or more, a thin film is formed on the substrate. During the film formation, atomic hydrogen can exist stably in the space between the substrate holder and the heating element, and creates an environment in which the secondary products that are simultaneously generated during the silicon film formation process are reduced. be able to. Therefore, when the heating element CVD apparatus is used in a slightly low pressure range of several Pa, it is sufficient to set the temperature for heating and maintaining the inner surface of the structure to at least 200 ° C. or higher.
【００２３】なお、基板ホルダーと発熱体との間の空間
を囲む前記構造体の内面を加熱維持する温度は、薄膜が
形成されている基板に熱的損傷を与えない温度範囲であ
ればその上限に特に制限はない。It should be noted that the temperature at which the inner surface of the structure surrounding the space between the substrate holder and the heating element is heated and maintained is within its upper limit as long as it does not cause thermal damage to the substrate on which the thin film is formed. There is no particular limitation.
【００２４】次に、本発明が提案する発熱体ＣＶＤ方法
は、上記目的を達成するため、前述した本発明の発熱体
ＣＶＤ装置を用いて行われるものであって、基板上に形
成される薄膜がシリコン膜、シリコンカーバイド膜、シ
リコンゲルマニウム膜、等であり、これらの薄膜の成膜
中、前記基板ホルダーと発熱体との間の空間を囲む構造
体の内面が、前述した理由から、少なくとも２００℃以
上に、好ましくは少なくとも３５０℃以上に加熱維持さ
れていることを特徴とするものである。Next, the heating element CVD method proposed by the present invention is carried out by using the heating element CVD apparatus of the present invention described above in order to achieve the above object, and is a thin film formed on a substrate. Is a silicon film, a silicon carbide film, a silicon germanium film, etc., and during the formation of these thin films, the inner surface of the structure surrounding the space between the substrate holder and the heating element is at least 200 for the reason described above. It is characterized by being heated and maintained at a temperature of not less than 0 ° C, preferably at least 350 ° C.
【００２５】以下、添付図面を参照して本発明の好まし
い実施形態を説明するが、各構成、形状及び配置関係に
ついては、本発明が理解できる程度に概略的に示したも
のに過ぎず、また、数値及び各構成の組成（材質）につ
いては例示にすぎない。したがって、本発明は以下に説
明する実施形態に限定されず、特許請求の範囲の記載か
ら把握される技術的範囲において種々の形態に変更可能
である。Preferred embodiments of the present invention will be described below with reference to the accompanying drawings, but the respective configurations, shapes, and positional relationships are merely schematically shown to the extent that the present invention can be understood, and The numerical values and the composition (material) of each component are merely examples. Therefore, the present invention is not limited to the embodiments described below, and can be modified into various forms within the technical scope understood from the description of the claims.
【００２６】[0026]
【発明の実施の形態】図１は、本願発明の実施の形態の
発熱体ＣＶＤ装置の構成を説明する正面断面概略図であ
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic front sectional view for explaining the structure of a heating element CVD apparatus according to an embodiment of the present invention.
【００２７】図１に示す発熱体ＣＶＤ装置は、内部で所
定の処理（例えば、基板９に対する薄膜の形成や、クリ
ーニング）がなされる処理容器１を備えている。処理容
器１は、この内部を所定の圧力に排気する排気系２を備
えている。また、処理容器１には、処理容器１内に所定
の原料ガス（例えば、シリコン膜を作製する場合のシラ
ン（ＳｉＨ４ ）ガスと、水素（Ｈ２ ）ガス）を供給
するガス供給系３が接続されている。処理容器１の内部
には、供給された原料ガスが表面を通過するように発熱
体４が設けられている。発熱体４には、これを所定の高
温（例えば、１６００℃〜２５００℃）に維持するため
にエネルギーを与える電力供給機構６が接続されてい
る。処理容器１内の所定の位置には、基板ホルダー５に
よって基板９が保持されており、前記のように、処理容
器１内に供給された原料ガスが、所定の高温に維持され
ている発熱体４によって分解及び／又は活性化され、基
板９の上に所定の薄膜が作製される。なお、基板ホルダ
ー５は不図示の駆動系により上下方向の移動が可能であ
る。The heating element CVD apparatus shown in FIG. 1 is provided with a processing container 1 in which predetermined processing (for example, forming a thin film on the substrate 9 and cleaning) is performed. The processing container 1 includes an exhaust system 2 that exhausts the inside of the processing container 1 to a predetermined pressure. A gas supply system 3 for supplying a predetermined source gas (for example, silane (SiH4) gas and hydrogen (H2) gas for producing a silicon film) into the processing container 1 is connected to the processing container 1. ing. A heating element 4 is provided inside the processing container 1 so that the supplied source gas passes through the surface. The heating element 4 is connected to a power supply mechanism 6 that gives energy to maintain the heating element 4 at a predetermined high temperature (for example, 1600 ° C. to 2500 ° C.). The substrate 9 is held by the substrate holder 5 at a predetermined position in the processing container 1, and the source gas supplied into the processing container 1 is maintained at a predetermined high temperature as described above. 4 is decomposed and / or activated by 4 to form a predetermined thin film on the substrate 9. The substrate holder 5 can be moved in the vertical direction by a drive system (not shown).
【００２８】また、基板９と基板ホルダー５は不図示の
静電吸着機構により密着しており、シリコン膜成膜時に
基板９は３００〜３５０℃で加熱されている。Further, the substrate 9 and the substrate holder 5 are brought into close contact with each other by an electrostatic adsorption mechanism (not shown), and the substrate 9 is heated at 300 to 350 ° C. when the silicon film is formed.
【００２９】図１に示すように、発熱体４は、原料ガス
供給器３２に保持された形態となっている。原料供給器
３２はガス供給系３と接続されており、原料ガスは、原
料ガス供給器３２を介して、処理容器１内に導入され、
所定の高温に維持されている発熱体４を通過していく。As shown in FIG. 1, the heating element 4 is held by the raw material gas supplier 32. The raw material supplier 32 is connected to the gas supply system 3, and the raw material gas is introduced into the processing container 1 via the raw material gas supplier 32.
It passes through the heating element 4 maintained at a predetermined high temperature.
【００３０】処理容器１は、気密な真空容器であり、基
板９の出し入れを行なうための不図示のゲートバルブを
備えている。The processing container 1 is an airtight vacuum container and has a gate valve (not shown) for loading and unloading the substrate 9.
【００３１】処理容器１は、排気口１１を有しており、
この排気口１１を通じて処理容器１の内部が排気される
ようになっている。The processing container 1 has an exhaust port 11,
The inside of the processing container 1 is exhausted through the exhaust port 11.
【００３２】排気系２は、ターボ分子ポンプ等の真空ポ
ンプ２１を備えている。排気系２は処理容器１の排気口
１１と繋がっており処理容器１内を１０−５〜１０−７
Ｐａ程度までに排気可能に構成されている。尚、排気系
２は、バリアブルオリフィス等の排気速度調整器２２を
備えている。The exhaust system 2 is equipped with a vacuum pump 21 such as a turbo molecular pump. The exhaust system 2 is connected to the exhaust port 11 of the processing container 1 so that the inside of the processing container 1 is 10 −5 to 10 −7.
Exhaust is possible up to about Pa. The exhaust system 2 includes an exhaust speed regulator 22 such as a variable orifice.
【００３３】ガス供給系３は、原料ガスであるシラン
（ＳｉＨ４ ）を溜めたガスボンベ３１ａと、シラン
（ＳｉＨ４ ）に混合される水素（Ｈ２ ）を溜めたガ
スボンベ３１ｂと、ガスボンベ３１ａ、３１ｂと原料ガ
ス供給器３２とを繋ぐ配管３３と、配管３３上に設けら
れたバルブ３４や流量調整器３５とから主に構成されて
いる。The gas supply system 3 includes a gas cylinder 31a in which silane (SiH4) as a raw material gas is stored, a gas cylinder 31b in which hydrogen (H2) mixed with silane (SiH4) is stored, and the gas cylinders 31a and 31b and the raw material gas. It is mainly configured by a pipe 33 connecting the feeder 32, a valve 34 and a flow rate regulator 35 provided on the pipe 33.
【００３４】つまり、ガスボンベ３１ａ、３１ｂからの
シラン（ＳｉＨ４ ）や水素（Ｈ２）が、配管３３の途
中で混合して原料ガスとなって原料ガス供給器３２に導
入されこの原料ガスが、原料ガス供給器３２のガス吹き
出し孔３２０から発熱体４に向けて吹き出して処理容器
１内に供給されるようになっている。That is, silane (SiH4) and hydrogen (H2) from the gas cylinders 31a and 31b are mixed in the middle of the pipe 33 to become a raw material gas which is introduced into the raw material gas supplier 32, and this raw material gas is fed into the raw material gas. The gas is blown from the gas blowing hole 320 of the feeder 32 toward the heating element 4 to be fed into the processing container 1.
【００３５】発熱体４は、例えば、タングステン、モリ
ブデン又はタンタル等の高融点金属からなるものであ
る。又、電力供給機構６は、発熱体４を通電して発熱体
４にジュール熱を発生させるように構成されている。つ
まり、電力供給機構６は電力を供給して発熱体４を所定
の高温、例えば、１６００℃〜２５００℃程度の高温に
維持できるよう構成されている。The heating element 4 is made of a refractory metal such as tungsten, molybdenum or tantalum. Further, the power supply mechanism 6 is configured to energize the heating element 4 to generate Joule heat in the heating element 4. That is, the power supply mechanism 6 is configured to supply power to maintain the heating element 4 at a predetermined high temperature, for example, a high temperature of about 1600 ° C to 2500 ° C.
【００３６】図１中、符号８で示される部材は、本願発
明の実施の形態の発熱体ＣＶＤ装置において、特徴的な
構成をなす、基板ホルダー５と発熱体４との間の空間を
囲み、それ自体に加熱機構を備えている構造体（加熱治
具）である。In FIG. 1, a member denoted by reference numeral 8 surrounds a space between the substrate holder 5 and the heating element 4 which is characteristic of the heating element CVD apparatus according to the embodiment of the present invention. It is a structure (heating jig) that itself has a heating mechanism.
【００３７】図１図示のように、加熱治具８は、処理容
器１の内側壁の内側で、基板ホルダー５と発熱体４との
間の空間を囲むようにして設置されている。そして、加
熱治具８の内側壁は、加熱治具８に内蔵されている加熱
機構によって、少なくとも２００℃以上、好ましくは少
なくとも３５０℃以上に加熱・維持される構造になって
いる。As shown in FIG. 1, the heating jig 8 is installed inside the inner wall of the processing container 1 so as to surround the space between the substrate holder 5 and the heating element 4. The inner wall of the heating jig 8 is heated and maintained at at least 200 ° C. or higher, preferably at least 350 ° C. or higher by the heating mechanism built in the heating jig 8.
【００３８】図２に、発熱体４が保持されている原料ガ
ス供給器３２の断面概略図を示す。原料ガス供給器３２
は、発熱体４を保持し、電力供給機構６と連結する配線
６１に接続し発熱体４に電力を供給する接続端子３２１
と、接続端子３２１間を繋ぐ連結板３２３と、原料ガス
供給系３と接続し供給された原料ガスをガス吹き出し孔
３２０から発熱体４を通過させて処理容器１内に原料ガ
スを供給する原料ガス供給室３２２とから構成されてい
る。FIG. 2 shows a schematic sectional view of the raw material gas supply device 32 in which the heating element 4 is held. Raw material gas supplier 32
Is a connection terminal 321 that holds the heating element 4 and is connected to the wiring 61 connected to the power supply mechanism 6 to supply power to the heating element 4.
And a connecting plate 323 connecting between the connection terminals 321 and a raw material gas which is connected to the raw material gas supply system 3 and passes the supplied raw material gas from the gas blowing hole 320 through the heating element 4 to supply the raw material gas into the processing container 1. It is composed of a gas supply chamber 322.
【００３９】接続端子３２１及び連結板３２３は原料ガ
スと接触しない構造を採っているため、腐食、劣化等の
心配はない。Since the connection terminal 321 and the connecting plate 323 have a structure which does not come into contact with the raw material gas, there is no fear of corrosion or deterioration.
【００４０】発熱体４は、原料ガス供給器３２の内部に
固定された接続端子３２１に押さえバネ（不図示）等で
固定されているため、着脱が容易である。また、基板ホ
ルダー５に保持された基板９の大きさやプロセス条件等
に応じて、基板９と発熱体４との距離を調整させ、及び
／又は、原料ガス供給器３２に取り付けられた発熱体４
の相互間の距離を調整することもできる。Since the heating element 4 is fixed to the connection terminal 321 fixed inside the source gas supply device 32 by a pressing spring (not shown) or the like, it can be easily attached and detached. Further, the distance between the substrate 9 and the heating element 4 is adjusted according to the size of the substrate 9 held by the substrate holder 5, the process conditions, etc., and / or the heating element 4 attached to the source gas supplier 32.
It is also possible to adjust the distance between them.
【００４１】図３（ａ）は、本発明の実施形態であり特
徴をなす発熱体ＣＶＤ装置の処理容器１の内部を、上か
ら（原料ガス供給器３２側から）基板ホルダー５側に向
かって見た一部を省略した図である。基板ホルダー５と
発熱体４との間の空間を囲む加熱治具８が設置されてい
る位置を説明するため、基板ホルダー５に保持されてい
る基板９に対する加熱治具８の位置関係を表している。
図３（ｂ）は、加熱治具８側面を透視した図である。FIG. 3A shows the inside of the processing container 1 of the heating element CVD apparatus, which is a feature of the embodiment of the present invention, from the top (from the source gas supplier 32 side) toward the substrate holder 5 side. It is the figure which abbreviated one part. In order to explain the position where the heating jig 8 surrounding the space between the substrate holder 5 and the heating element 4 is installed, the positional relationship of the heating jig 8 with respect to the substrate 9 held by the substrate holder 5 is shown. There is.
FIG. 3B is a perspective view of the side surface of the heating jig 8.
【００４２】図３（ａ）において、処理容器１の中央に
は、基板ホルダー（不図示）上に保持された基板９が配
置され、その外周をヒーター１３が内蔵された加熱治具
８が囲っている。In FIG. 3A, a substrate 9 held on a substrate holder (not shown) is arranged in the center of the processing container 1, and the outer periphery of the substrate 9 is surrounded by a heating jig 8 containing a heater 13. ing.
【００４３】このような形態は、基板ホルダー５と発熱
体４との間の空間を加熱するという目的を効果的に達成
する上で有利である。Such a form is advantageous in effectively achieving the purpose of heating the space between the substrate holder 5 and the heating element 4.
【００４４】なお、処理容器１と加熱治具８との固定方
法は、処理容器１の上面に固定されている形態（図１図
示）に限られず、処理容器１の下面（排気口１１の接続
面）に固定金具で支えられた形態など、基板９の基板ホ
ルダー５への搬送が妨げられない構造であれば、この限
りではない。The method of fixing the processing container 1 and the heating jig 8 is not limited to the form of being fixed to the upper surface of the processing container 1 (shown in FIG. 1), and the lower surface of the processing container 1 (connection of the exhaust port 11). The structure is not limited to this as long as the structure is such that the transfer of the substrate 9 to the substrate holder 5 is not hindered, such as a form supported by a fixing bracket on the surface).
【００４５】図３（ｂ）において、符号７は、加熱治具
８内側壁を所定の温度で加熱・維持するための加熱機構
７を示す。加熱機構７は、加熱治具８に内蔵されたヒー
ター１３と、加熱治具８の温度を検知するセンサー１４
とセンサー１４からの信号をもとにヒーター１３の投入
電力を調整する加熱温調器１５と、ヒーター１３及びセ
ンサー１４と加熱温調器１５を繋ぐ配線１６と、加熱治
具８側の配線１６の接続部１２とで構成されている。In FIG. 3B, reference numeral 7 indicates a heating mechanism 7 for heating and maintaining the inner side wall of the heating jig 8 at a predetermined temperature. The heating mechanism 7 includes a heater 13 built in the heating jig 8 and a sensor 14 that detects the temperature of the heating jig 8.
A heating temperature controller 15 that adjusts the electric power supplied to the heater 13 based on signals from the sensor 14 and a wiring 16 that connects the heater 13 and the sensor 14 to the heating temperature controller 15 and a wiring 16 on the heating jig 8 side. And the connecting portion 12 of
【００４６】また、図３（ｂ）では、ヒーター１３は、
加熱・温調が均一に行われるようにらせん状に巻かれて
いるが、加熱治具８におけるヒーター１３の配置はこれ
に限定されるものではない。また、ヒーター１３は、原
料ガス（シラン、水素）との接触による腐食、劣化を防
ぐため、加熱治具８に内蔵した形態をしているが、加熱
治具８の内側壁を少なくとも２００℃以上、あるいは少
なくとも３５０℃以上で加熱・温調が可能であり、ヒー
ター１３の腐食、劣化の防止が施されていれば、同様に
ヒーター１３の配置は任意である。Further, in FIG. 3B, the heater 13 is
Although it is spirally wound so that heating and temperature control are performed uniformly, the arrangement of the heater 13 in the heating jig 8 is not limited to this. Further, the heater 13 is built in the heating jig 8 in order to prevent corrosion and deterioration due to contact with the source gas (silane, hydrogen), but the inner wall of the heating jig 8 is at least 200 ° C. or more. Alternatively, if the heater 13 can be heated / controlled at a temperature of at least 350 ° C. and corrosion and deterioration of the heater 13 are prevented, the heater 13 can be arranged in the same manner.
【００４７】なお、本発明の発熱体ＣＶＤ装置の実施形
態は、これに限定されるものではない。The embodiment of the heating element CVD apparatus of the present invention is not limited to this.
【００４８】例えば、図示してはいないが、基板ホルダ
ー５と発熱体４との間の空間を囲む構造体を処理容器１
の内側壁とし、当該構造体の内面の加熱は、処理容器１
の内側壁に内蔵されている加熱機構によって行われるよ
うにし、これによって処理容器１の内側壁を、少なくと
も２００℃以上、好ましくは少なくとも３５０℃以上に
加熱維持できるようにする実施形態も採用可能である。For example, although not shown, the structure surrounding the space between the substrate holder 5 and the heating element 4 is a processing container 1.
The inner wall of the processing container 1 is heated by heating the inner surface of the structure.
It is also possible to employ an embodiment in which the heating mechanism built into the inner wall of the processing container 1 is used to thereby maintain the inner wall of the processing container 1 at a temperature of at least 200 ° C. or higher, preferably at least 350 ° C. or higher. is there.
【００４９】次に本発明のＣＶＤ方法の説明を兼ねて図
１〜図３（ｂ）図示の実施形態の装置の動作について説
明する。Next, the operation of the apparatus of the embodiment shown in FIGS. 1 to 3 (b) will be described together with the description of the CVD method of the present invention.
【００５０】不図示の予備真空室内に基板９を配置して
予備真空室及び処理容器１内を所定の圧力まで排気し、
ゲートバルブ（不図示）を開けて基板９を不図示の搬送
機構が処理容器１内に搬入する。不図示の駆動系により
基板ホルダー５を上下に移動させ、基板９を基板ホルダ
ー５上に載置して保持する。The substrate 9 is placed in a pre-vacuum chamber (not shown) and the pre-vacuum chamber and the processing container 1 are evacuated to a predetermined pressure.
A gate valve (not shown) is opened and the substrate 9 is loaded into the processing container 1 by a transfer mechanism (not shown). The substrate holder 5 is moved up and down by a drive system (not shown), and the substrate 9 is placed and held on the substrate holder 5.
【００５１】このとき、基板ホルダー５は所定の温度
（例えば、３００〜３５０℃）に維持され、静電吸着
（不図示）により基板９と基板ホルダー５は密着してい
る。At this time, the substrate holder 5 is maintained at a predetermined temperature (for example, 300 to 350 ° C.), and the substrate 9 and the substrate holder 5 are in close contact with each other by electrostatic attraction (not shown).
【００５２】次に、電力供給機構６が発熱体４の通電を
開始して、発熱体４が所定の高温に維持されるようにす
る。また、加熱治具８に内蔵されているヒーター１３を
通電し、例えば、所定温度の３５０℃になるように加熱
温調器１５を動作させる。発熱体４が所定の高温に維持
され、加熱治具８の内側面の温度がセンサー１４で３５
０℃に達していることが確認されると、ガス供給系３が
動作し、流量調整器３５によって流量を調整しながら原
料ガス、つまり、水素ガスが混合されたシランガスが処
理容器１内に導入される。その後、処理容器１内は排気
系２によって所定の圧力に維持される。Next, the power supply mechanism 6 starts energizing the heating element 4 so that the heating element 4 is maintained at a predetermined high temperature. Further, the heater 13 built in the heating jig 8 is energized, and the heating temperature controller 15 is operated so as to reach a predetermined temperature of 350 ° C., for example. The heating element 4 is maintained at a predetermined high temperature, and the temperature of the inner surface of the heating jig 8 is set to 35 by the sensor 14.
When it is confirmed that the temperature has reached 0 ° C., the gas supply system 3 operates and the raw material gas, that is, the silane gas mixed with the hydrogen gas is introduced into the processing container 1 while adjusting the flow rate by the flow rate regulator 35. To be done. Then, the inside of the processing container 1 is maintained at a predetermined pressure by the exhaust system 2.
【００５３】ヒーター１３の通電量は、本発明の発熱体
ＣＶＤ装置が数十Ｐａの圧力領域で使用される場合に
は、加熱治具８の内側面が少なくとも３５０℃以上に加
熱維持され、本発明の発熱体ＣＶＤ装置がやや低い圧力
範囲、例えば、数Ｐａの圧力領域で使用されるときに
は、加熱治具８の内側面が少なくとも２００℃以上に加
熱維持されるように調整される。When the heating element CVD apparatus of the present invention is used in a pressure range of several tens of Pa, the inner surface of the heating jig 8 is heated and maintained at at least 350 ° C. or more so that the heater 13 is energized. When the heating element CVD apparatus of the present invention is used in a rather low pressure range, for example, in a pressure range of several Pa, the inner surface of the heating jig 8 is adjusted to be maintained at 200 ° C. or higher.
【００５４】なお、３５０℃以上の加熱には時間を要し
てしまうため、成膜工程が行われていない場合でも２０
０℃以上で温調しておき、３５０℃以上までの加熱時間
を短縮させると、生産効率の向上を図ることができるの
で有利である。Since heating at 350 ° C. or higher takes time, even if the film forming process is not performed,
It is advantageous to control the temperature at 0 ° C. or higher and shorten the heating time up to 350 ° C. or higher because the production efficiency can be improved.
【００５５】この結果、発熱体４の表面で分解及び／又
は活性化した原料ガスが効率良く基板９の表面に達し、
基板９の表面に多結晶のシリコン膜が堆積する。As a result, the source gas decomposed and / or activated on the surface of the heating element 4 efficiently reaches the surface of the substrate 9,
A polycrystalline silicon film is deposited on the surface of the substrate 9.
【００５６】薄膜の厚さが所定の厚さに達するのに必要
な時間が経過した後、ガス供給系３のバルブ３４が閉じ
られるとともに電力供給機構６の動作が停止される。必
要に応じて、発熱体４及びヒーター１３の通電は遮断し
てもかまわない。After the time required for the thin film to reach the predetermined thickness has elapsed, the valve 34 of the gas supply system 3 is closed and the operation of the power supply mechanism 6 is stopped. The heating element 4 and the heater 13 may be de-energized as necessary.
【００５７】そして、排気系２が動作して処理容器１内
を再度所定の圧力まで排気した後、不図示のゲートバル
ブが開き、不図示の搬送機構が基板９を処理容器１から
取り出す。これで一連の成膜処理が終了する。Then, after the exhaust system 2 operates to exhaust the inside of the processing container 1 to a predetermined pressure again, a gate valve (not shown) is opened and a transfer mechanism (not shown) takes out the substrate 9 from the processing container 1. This completes a series of film forming processes.
【００５８】基板ホルダー５と発熱体４との間の空間を
囲む構造体が、図１図示の実施形態のように、処理容器
１の内側で、基板ホルダー５と発熱体４との間の空間を
囲むように設置されている加熱治具８である本発明の発
熱体ＣＶＤ装置を用いた本発明のＣＶＤ方法によってシ
リコン膜（膜厚：１０００ｎｍ）を成膜する条件の一例
を以下に記す。The structure surrounding the space between the substrate holder 5 and the heating element 4 is the space between the substrate holder 5 and the heating element 4 inside the processing container 1 as in the embodiment shown in FIG. An example of conditions for forming a silicon film (film thickness: 1000 nm) by the CVD method of the present invention using the heating element CVD apparatus of the present invention, which is the heating jig 8 installed so as to surround the above, will be described below.
【００５９】 基板 φ８Ｓｉ基板 処理容器１内の圧力 ２Ｐａ ＳｉＨ４ 流量 ３ｍｌ／ｍｉｎ Ｈ２ 流量 １００ｍｌ／ｍｉｎ 発熱体４の温度 １８００℃ 加熱治具８の内側面の温度 ３５０℃ 発熱体４−基板９間距離 ４５ｍｍ[0059] Substrate φ8Si substrate Pressure in processing container 1 2 Pa SiH4 flow rate 3ml / min H2 flow rate 100ml / min Temperature of heating element 4 1800 ℃ Temperature of the inner surface of the heating jig 8 350 ℃ Distance between heating element 4 and substrate 9 45 mm
【００６０】一方、同一の発熱体ＣＶＤ装置を用いなが
ら、加熱治具８による加熱を行わない以外は同一の条件
でシリコン膜（膜厚：１０００ｎｍ）を成膜し、これを
比較例とした。On the other hand, a silicon film (thickness: 1000 nm) was formed under the same conditions except that the heating jig 8 was not used while using the same heating element CVD apparatus, and this was used as a comparative example.
【００６１】両者のシリコン膜（膜厚：１０００ｎｍ）
について電子移動度を測定した。Both silicon films (film thickness: 1000 nm)
Was measured for electron mobility.
【００６２】その結果、比較例のシリコン膜の電子移動
度は、せいぜい１ｃｍ２ ／Ｖｓでありアモルファス膜
と同程度であったのに対し、本発明の装置及び方法を用
いて、加熱治具８の内側面の温度を３５０℃にして成膜
をしたシリコン膜においては、電子移動度が改善されて
いることが確認された。As a result, the electron mobility of the silicon film of the comparative example was at most 1 cm 2 / Vs, which was about the same as that of the amorphous film, while the heating jig 8 was used by using the apparatus and method of the present invention. It was confirmed that the electron mobility was improved in the silicon film formed by setting the temperature of the inner surface of the film to 350 ° C.
【００６３】なお、基板ホルダー５と発熱体４との間の
空間を囲む構造体を処理容器１の内側壁とし、この処理
容器１の内側壁の温度を３５０℃にして前述した条件で
シリコン膜（膜厚：１０００ｎｍ）を成膜したところ、
やはり、電子移動度が改善されていることを確認でき
た。The structure surrounding the space between the substrate holder 5 and the heating element 4 is used as the inner side wall of the processing container 1, and the temperature of the inner side wall of the processing container 1 is set to 350 ° C. under the conditions described above. When a film (thickness: 1000 nm) is formed,
After all, it was confirmed that the electron mobility was improved.
【００６４】以上の実施例では、多結晶シリコン膜形成
における好適実施形態について述べたが、本発明におい
て開示した発熱体ＣＶＤ装置の構成及び発熱体ＣＶＤ方
法は、発熱体ＣＶＤ法により高品質な成膜を安定的に行
う上で本質的なものである。そこで、本発明の発熱体Ｃ
ＶＤ装置とこれを用いた発熱体ＣＶＤ方法は、成膜中に
原子状水素の生成を伴う膜種、例えば、原料ガスに、メ
タン（ＣＨ４ ）、アセチレン（Ｃ２ Ｈ２ ）及び、
エタン（Ｃ２ Ｈ６ ）の中の少なくとも一種以上と、
シラン（ＳｉＨ４ ）及び、水素（Ｈ２ ）を用いて得
られるシリコンカーバイド膜や、原料ガスに、シラン
（ＳｉＨ４ ）とゲルマン（ＧｅＨ４ ）及び水素（Ｈ
２ ）を用いて得られるシリコンゲルマニウム膜などの
形成においても適用することができる。Although the preferred embodiments in forming the polycrystalline silicon film have been described in the above examples, the structure of the heating element CVD apparatus and the heating element CVD method disclosed in the present invention are of high quality by the heating element CVD method. It is essential for stable film formation. Therefore, the heating element C of the present invention
A VD apparatus and a heating element CVD method using the same include a film type accompanied by generation of atomic hydrogen during film formation, for example, methane (CH4), acetylene (C2H2), and
At least one or more of ethane (C2 H6),
Silane (SiH4) and a silicon carbide film obtained by using hydrogen (H2), or silane (SiH4) and germane (GeH4) and hydrogen (H
It can also be applied to the formation of a silicon germanium film obtained by using 2).
【００６５】[0065]
【発明の効果】本発明の発熱体ＣＶＤ装置及び発熱体Ｃ
ＶＤ方法によれば、基板ホルダーと発熱体との間の空間
を囲む構造体の内面を、少なくとも２００℃以上、好ま
しくは少なくとも３５０℃以上に加熱維持してシリコン
膜を成膜することで、デバイス特性が良好で、高品質な
多結晶シリコン膜の成膜が可能になった。EFFECT OF THE INVENTION Heating element CVD apparatus and heating element C of the present invention
According to the VD method, the silicon film is formed by heating and maintaining the inner surface of the structure surrounding the space between the substrate holder and the heating element to at least 200 ° C. or higher, preferably at least 350 ° C. or higher. It is possible to form a high-quality polycrystalline silicon film with good characteristics.
【図１】 本発明の発熱体ＣＶＤ装置の構成を説明する
正面断面概略図。FIG. 1 is a schematic front sectional view illustrating the configuration of a heating element CVD apparatus according to the present invention.
【図２】 原料ガス供給器の断面概略図。FIG. 2 is a schematic sectional view of a raw material gas supplier.
【図３】 （ａ）は、本発明の発熱体ＣＶＤ装置におけ
る処理容器の内部を上から見た一部を省略した図。
（ｂ）は、加熱治具の側面を透視した図。FIG. 3A is a diagram in which a part of the inside of the processing container in the heating element CVD apparatus of the present invention is viewed from above and is omitted.
(B) The figure which looked through the side of a heating jig.
１ 処理容器 ２ 排気系 ３ ガス供給系 ４ 発熱体 ５ 基板ホルダー ６ 電力供給機構 ７ 加熱機構 ８ 加熱治具 ９ 基板 １１ 排気口 １２ 接続部 １３ ヒーター １４ センサー １５ 加熱温調器 １６ 配線 １７ 防着板 ２１ 真空ポンプ ２２ 排気速度調整器 ３１ａ ガスボンベ ３１ｂ ガスボンベ ３２ 原料ガス供給器 ３３ 配管 ３４ バルブ ３５ 流量調整器 ６１ 配線 ３２０ ガス吹き出し孔 ３２１ 接続端子 ３２２ 原料ガス供給室 ３２３ 連結板 1 processing container 2 exhaust system 3 gas supply system 4 heating element 5 board holder 6 Power supply mechanism 7 heating mechanism 8 heating jig 9 substrates 11 exhaust port 12 Connection 13 heater 14 sensors 15 Heating temperature controller 16 wiring 17 Defense plate 21 vacuum pump 22 Exhaust speed regulator 31a gas cylinder 31b gas cylinder 32 Raw material gas feeder 33 piping 34 valve 35 Flow controller 61 wiring 320 gas outlet 321 connection terminal 322 Raw material gas supply chamber 323 connection plate
───────────────────────────────────────────────────── フロントページの続き (72)発明者 田中 雅彦 東京都府中市四谷５丁目８番１号 アネル バ株式会社内 Ｆターム(参考） 4K030 BA09 BA29 BA37 BA48 FA10 JA10 KA24 LA15 5F045 AB03 AC01 AD07 AE17 AE19 BB07 BB08 BB12 BB16 DP03 DQ10 EB02 EK07 EK26 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Masahiko Tanaka 5-8 Yotsuya, Fuchu-shi, Tokyo Anel Within BA Co., Ltd. F-term (reference) 4K030 BA09 BA29 BA37 BA48 FA10 JA10 KA24 LA15 5F045 AB03 AC01 AD07 AE17 AE19 BB07 BB08 BB12 BB16 DP03 DQ10 EB02 EK07 EK26
Claims (12)
されている基板に対して所定の処理がなされる処理容器
と、当該処理容器に接続されていて処理容器内を真空に
排気する排気系、及び、処理容器内に所定の原料ガスを
供給する原料ガス供給系と、当該処理容器内に配置され
ていて電力供給機構から電力供給を受けて高温にされる
発熱体とを備え、前記原料ガス供給系から処理容器内に
導入された原料ガスが高温に維持されている発熱体によ
って分解及び／又は活性化され、前記基板ホルダーに保
持されている基板に薄膜が形成される発熱体ＣＶＤ装置
であって、 前記基板上に薄膜を成膜中、前記基板ホルダーと発熱体
との間の空間を囲む構造体の内面が加熱されていること
を特徴とする発熱体ＣＶＤ装置。1. A processing container for performing a predetermined processing on a substrate held by a substrate holder provided therein, and an exhaust system connected to the processing container for evacuating the inside of the processing container to a vacuum. A raw material gas supply system that supplies a predetermined raw material gas into the processing container, and a heating element that is disposed in the processing container and is heated to a high temperature by receiving power supply from a power supply mechanism, A heating element CVD apparatus in which a source gas introduced from a gas supply system into a processing container is decomposed and / or activated by a heating element maintained at a high temperature to form a thin film on a substrate held by the substrate holder. The heating element CVD apparatus, wherein the inner surface of the structure surrounding the space between the substrate holder and the heating element is heated during the deposition of the thin film on the substrate.
構造体は、処理容器の内側壁の内側で、基板ホルダーと
発熱体との間の空間を囲むようにして設置されている加
熱治具であり、前記構造体の内面の加熱は、当該加熱治
具に内蔵されている加熱機構によって行われることを特
徴とする請求項１記載の発熱体ＣＶＤ装置。2. A heating jig that surrounds the space between the substrate holder and the heating element, the structure surrounding the space between the substrate holder and the heating element being provided inside the inner wall of the processing container. The heating element CVD apparatus according to claim 1, wherein the heating of the inner surface of the structure is performed by a heating mechanism built in the heating jig.
構造体は、処理容器の内側壁であって、前記構造体の内
面の加熱は、当該内側壁に内蔵されている加熱機構によ
って行われることを特徴とする請求項１記載の発熱体Ｃ
ＶＤ装置。3. The structure surrounding the space between the substrate holder and the heating element is the inner wall of the processing container, and the inner surface of the structure is heated by a heating mechanism built in the inner wall. The heating element C according to claim 1, which is performed.
VD device.
２００℃以上に加熱維持されるように行われることを特
徴とする請求項１乃至３のいずれか一項記載の発熱体Ｃ
ＶＤ装置。4. The heating element C according to claim 1, wherein the heating is performed so that the inner surface of the structure is heated and maintained at at least 200 ° C. or higher.
VD device.
３５０℃以上に加熱維持されるように行われることを特
徴とする請求項１乃至３のいずれか一項記載の発熱体Ｃ
ＶＤ装置。5. The heating element C according to claim 1, wherein the heating is performed so that the inner surface of the structure is heated and maintained at at least 350 ° C. or higher.
VD device.
ることを特徴とする請求項１乃至５のいずれか一項記載
の発熱体ＣＶＤ装置。6. The heating element CVD apparatus according to claim 1, wherein the thin film formed on the substrate is a silicon film.
イド膜であることを特徴とする請求項１乃至５のいずれ
か一項記載の発熱体ＣＶＤ装置。7. The heating element CVD apparatus according to claim 1, wherein the thin film formed on the substrate is a silicon carbide film.
ニウム膜であることを特徴とする請求項１乃至５のいず
れか一項記載の発熱体ＣＶＤ装置。8. The heating element CVD apparatus according to claim 1, wherein the thin film formed on the substrate is a silicon germanium film.
されている基板に対して所定の処理がなされる処理容器
と、当該処理容器に接続されていて処理容器内を真空に
排気する排気系、及び、処理容器内に所定の原料ガスを
供給する原料ガス供給系と、当該処理容器内に配置され
ていて電力供給機構から電力供給を受けて高温にされる
発熱体とを備え、前記原料ガス供給系から処理容器内に
導入された原料ガスが高温に維持されている発熱体によ
って分解及び／又は活性化され、前記基板ホルダーに保
持されている基板に薄膜が形成される発熱体ＣＶＤ装置
を用いた発熱体ＣＶＤ方法であって、基板上に形成され
る薄膜がシリコン膜であり、このシリコン膜の成膜中、
前記基板ホルダーと発熱体との間の空間を囲む構造体の
内面が、少なくとも２００℃以上に加熱維持されている
ことを特徴とする発熱体ＣＶＤ方法。9. A processing container for performing a predetermined processing on a substrate held by a substrate holder provided inside, and an exhaust system connected to the processing container for evacuating the inside of the processing container to a vacuum. A raw material gas supply system that supplies a predetermined raw material gas into the processing container, and a heating element that is disposed in the processing container and is heated to a high temperature by receiving power supply from a power supply mechanism, A heating element CVD apparatus in which a source gas introduced from a gas supply system into a processing container is decomposed and / or activated by a heating element maintained at a high temperature to form a thin film on a substrate held by the substrate holder. In a heating element CVD method, wherein the thin film formed on the substrate is a silicon film, and during the formation of this silicon film,
A heating element CVD method, wherein an inner surface of a structure surrounding a space between the substrate holder and the heating element is heated and maintained at at least 200 ° C. or higher.
ホルダーと発熱体との間の空間を囲む構造体の内面が、
少なくとも３５０℃以上に加熱維持されていることを特
徴とする請求項９記載の発熱体ＣＶＤ方法。10. The inner surface of the structure surrounding the space between the substrate holder and the heating element during the formation of the silicon film on the substrate,
The heating element CVD method according to claim 9, wherein the heating element is heated and maintained at at least 350 ° C or higher.
バイド膜であることを特徴とする請求項９又は１０記載
の発熱体ＣＶＤ方法。11. The heating element CVD method according to claim 9, wherein the thin film formed on the substrate is a silicon carbide film.
マニウム膜であることを特徴とする請求項９又は１０記
載の発熱体ＣＶＤ方法。12. The heating element CVD method according to claim 9, wherein the thin film formed on the substrate is a silicon germanium film.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007119700A1 (en) * | 2006-04-13 | 2007-10-25 | Ulvac, Inc. | Catalyst body chemical vapor phase growing apparatus |
| JP2016050164A (en) * | 2014-09-02 | 2016-04-11 | 昭和電工株式会社 | SiC chemical vapor deposition apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4232100B2 (en) | 2003-12-26 | 2009-03-04 | ソニー株式会社 | Playback apparatus and content evaluation method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007119700A1 (en) * | 2006-04-13 | 2007-10-25 | Ulvac, Inc. | Catalyst body chemical vapor phase growing apparatus |
| JP2007284717A (en) * | 2006-04-13 | 2007-11-01 | Ulvac Japan Ltd | Catalyst chemical vapor deposition system |
| DE112007000933T5 (en) | 2006-04-13 | 2009-03-12 | ULVAC, Inc., Chigasaki | Catalytic chemical vapor deposition apparatus |
| DE112007000933B4 (en) * | 2006-04-13 | 2014-11-20 | Ulvac, Inc. | Catalytic chemical vapor deposition apparatus |
| JP2016050164A (en) * | 2014-09-02 | 2016-04-11 | 昭和電工株式会社 | SiC chemical vapor deposition apparatus |
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